KR20050043331A - Method for manufacturing dispensing nozzle - Google Patents
Method for manufacturing dispensing nozzle Download PDFInfo
- Publication number
- KR20050043331A KR20050043331A KR1020030078183A KR20030078183A KR20050043331A KR 20050043331 A KR20050043331 A KR 20050043331A KR 1020030078183 A KR1020030078183 A KR 1020030078183A KR 20030078183 A KR20030078183 A KR 20030078183A KR 20050043331 A KR20050043331 A KR 20050043331A
- Authority
- KR
- South Korea
- Prior art keywords
- oxide film
- nozzle
- passivation layer
- hole
- etching
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 238000002161 passivation Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 238000005530 etching Methods 0.000 claims abstract description 12
- 238000000059 patterning Methods 0.000 claims abstract description 7
- 238000000576 coating method Methods 0.000 claims abstract description 6
- 238000001039 wet etching Methods 0.000 claims abstract description 6
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims abstract description 5
- 239000010935 stainless steel Substances 0.000 claims abstract description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000009825 accumulation Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1601—Production of bubble jet print heads
- B41J2/1603—Production of bubble jet print heads of the front shooter type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1606—Coating the nozzle area or the ink chamber
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1623—Manufacturing processes bonding and adhesion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1628—Manufacturing processes etching dry etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1629—Manufacturing processes etching wet etching
Abstract
본 발명은 디스팬싱 노즐(Dispensing Nozzle) 제조 방법에 관한 것으로서, 실리콘 기판 표면 및 바닥면에 각각 형성시킨 제1산화막 및 제2산화막을 형성시키는 제1공정과, 제1산화막의 중심부에 원형의 좁은 제1구멍형태로 패턴영역을 패터닝하는 제2공정과, 제2공정의 패턴에 따라 제1구멍을 깊게 반응성이온에칭하여 제1구멍을 따라 홈을 형성하는 제3공정과, 에칭된 제1산화막 위에 내에칭성의 패시베이션층을 성막하는 제4공정과, 제2산화막의 중심부에 원형의 넓은 제2구멍형태로 패턴영역을 패터닝하는 제5공정과, 제2산화막을 습식 에칭하여 패시베이션층을 만나서 약각 더 깊게 에칭하는 제5공정과, 제1산화막 위의 패시베이션층, 제1산화막, 제2산화막을 제거하는 제6공정과, 실리콘기판 표면에 내열성코팅하는 제7공정으로 구성되며, 내열성과 내구성을 가지며, 고 해상도의 출력물을 출력할 수 있는 10-20㎛의 직경을 갖는 노즐을 반도체의 공정을 이용하여 제조할 수 있으므로 대량 생산 할 수 있으며, 또한, 노즐에 발생하는 열을 스테인레스로 제조된 홀더를 구성하여 노즐에 가해지는 열을 분산시킬 수 있는 효과가 있다. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a dispensing nozzle, comprising: a first step of forming a first oxide film and a second oxide film formed on a surface and a bottom surface of a silicon substrate; A second step of patterning the pattern region in the form of a first hole, a third step of forming a groove along the first hole by deeply etching the first hole according to the pattern of the second step, and etching the first oxide film A fourth step of forming a etch-resistant passivation layer thereon; a fifth step of patterning a pattern region in the shape of a circular wide second hole in the center of the second oxide film; and wet etching the second oxide film to meet the passivation layer. The fifth step of deeper etching, the sixth step of removing the passivation layer on the first oxide film, the first oxide film and the second oxide film, and the seventh step of heat-resistant coating on the surface of the silicon substrate,It has a diameter of 10-20㎛ that can output a high-resolution output can be produced by using a semiconductor process can be mass-produced, and also a holder made of stainless steel heat generated in the nozzle There is an effect that can be configured to disperse the heat applied to the nozzle.
Description
본 발명은 디스팬싱 노즐(Dispensing Nozzle) 제조 방법에 관한 것으로서, 특히 디스팬싱에서 사용되는 구조에서 잉크를 효과적으로 분사시키는 노즐의 입구부분의 디스팬싱 노즐 제조 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a dispensing nozzle, and more particularly, to a method for producing a dispensing nozzle at an inlet portion of a nozzle for effectively injecting ink in a structure used in dispensing.
잉크젯 프린터의 잉크 토출 방식으로는 열원을 이용하여 잉크에 기포(버블)를 발생시켜 이 힘으로 잉크를 토출시키는 전기-열 변환 방식(electro-thermal transducer, 버블젯 방식)과, 압전체를 이용하여 압전체의 변형으로 인해 생기는 잉크의 체적 변화에 의해 잉크를 토출시키는 전기-기계 변환 방식(electro-mechanical transducer)이 있다. The ink ejection method of an inkjet printer uses an heat source to generate bubbles (bubbles) in the ink and discharges the ink using this force, and an piezoelectric element using a piezoelectric element. There is an electro-mechanical transducer in which ink is ejected by a volume change of ink caused by the deformation of.
전기-열 변환 방식(electro-thermal transducer, 버블젯 방식)에는 버블의 성장방향과 잉크 액적(液滴, droplet)의 토출 방향에 따라 탑-슈팅(top-shooting), 사이드-슈팅(side-shooting), 백-슈팅(back-shooting) 방식으로 분류된다. 여기서 탑-슈팅 방식은 버블의 성장 방향과 잉크액적의 토출 방향이 동일한 방식이고, 사이드 슈팅 방식은 버블의 성장 방향과 잉크액적의 토출 방향이 직각을 이루는 방식이고 그리고 백-슈팅 방식은 버블의 성장 방향과 잉크액적의 토출 방향이 서로 반대인 잉크 토출 방식을 말한다. Electro-thermal transducers (bubble jet) have top-shooting and side-shooting depending on the direction of bubble growth and the direction of ejection of ink droplets. ) Is classified into a back-shooting method. Here, the top-shooting method is a method in which the bubble growth direction and the ink droplet ejection direction are the same, and the side-shooting method is a method in which the bubble growth direction and the ink droplet ejection direction are perpendicular to each other, and the back-shooting method is bubble growth. The ink ejection method in which the direction and the ejection direction of the ink droplets are opposite to each other.
잉크젯 프린터에서는 히터에 의해 열이 발생하는 열에 의해 발생되는 열적 션트는 챔버내의 잉크로 전달되지 않은 잉여의 열을 기판으로 전달함으로써 노즐판에 대한 열축적, 즉 노즐판의 온도 상승이 억제되도록 하고 있다. 노즐판의 온도가 기준 이상의 온도로 상승하게 되면, 노즐의 수명단축 및 토출 성능의 저하 등을 문제를 야기시키게 된다. In inkjet printers, the thermal shunt generated by the heat generated by the heater transfers excess heat that is not transferred to the ink in the chamber to the substrate so that thermal accumulation to the nozzle plate, that is, temperature rise of the nozzle plate, is suppressed. . When the temperature of the nozzle plate is raised to a temperature higher than the reference, problems such as shortening the life of the nozzle and deterioration of the discharge performance are caused.
또한, 종래의 잉크제 프린트 노즐에는 실리콘옥사이드(SiOx) 또는 Si를 포함하는 절연층이 마련되는데 이러한 물질들은 대부분 친수성이기때문에 잉크 내에 존재하는 성분 특히 염료 등이 물리적 및/또는 화학적으로 흡착되는 현상(kogation)이 쉽게 발생될 수 있다. 이러한 흡착은 예를 들어 도 1에서 히터를 지지하는 절연층의 안쪽면에 발생되며, 결과적으로 히터로부터의 열이 잉크로 전달되는 것을 방해하게 된다.In addition, conventional ink print nozzles are provided with an insulating layer containing silicon oxide (SiO x ) or Si. Since most of these materials are hydrophilic, components in the ink, especially dyes, etc., are physically and / or chemically absorbed. Kogation can easily occur. Such adsorption occurs, for example, on the inner side of the insulating layer supporting the heater in FIG. 1, which in turn prevents heat from the heater from being transferred to the ink.
한편, 버블 발생 발생 후 소멸(또는 수축시) 발생되는 강한 부압에 의해 오리피스(노즐) 부근의 구조, 예를 들어 히터 하부에 있는 절연층에 물리적인 충격이 가해지고, 이로 인한 절연층에 크랙 발생될 수 있는데, 이는 결국 헤드를 더 이상 사용할 수 없는 결과를 초래하는 문제점이 있다. On the other hand, due to the strong negative pressure generated after the occurrence of bubble generation (or shrinkage), a physical shock is applied to the structure near the orifice (nozzle), for example, an insulation layer under the heater, and thus cracks occur in the insulation layer. This can be a problem, which in turn results in the head being no longer available.
이와 같은 문제점을 해결하기 위하여 기계적인 노즐을 사용하고 있으나, 이와 같은 기계적인 노즐은 가공에 한계가 있어 100㎛ 내지 60㎛의 직경을 갖는 노즐을 만드는 것이 한계이다. 즉 노즐 출구의 직경이 크게되면, 프린터의 해상도가 떨어지게 되어 고해상도의 프린터물을 프린트해 낼 수 없는 문제점이 있다. In order to solve such a problem, a mechanical nozzle is used, but such a mechanical nozzle has a limitation in processing, so it is a limitation to make a nozzle having a diameter of 100 µm to 60 µm. In other words, if the diameter of the nozzle outlet is large, the resolution of the printer is reduced and there is a problem that can not print a high-resolution printer.
본 발명은 전술한 문제점들을 해결하기 위하여 안출한 것으로, 효과적으로 노즐판 및 잉크에서의 열 축적을 억제할 수 있는 디스팬싱 노즐 제조 방법을 제공하는 데에 그 목적이 있다. The present invention has been made to solve the above problems, and an object thereof is to provide a dispensing nozzle manufacturing method capable of effectively suppressing heat accumulation in the nozzle plate and ink.
본 발명의 다른 목적은 버블 축소 및 소멸시 발생되는 노즐의 주위에서의 충격으로부터 노즐 주위의 구조물을 효과적으로 보호할 수 있는 디스팬싱 노즐 제조방법을 제공하는 것이다. Another object of the present invention is to provide a dispensing nozzle manufacturing method that can effectively protect the structure around the nozzle from the impact around the nozzle generated during bubble shrinkage and extinction.
전술한 목적을 달성하기 위하여, 본 발명은 실리콘 기판(100) 표면 및 바닥면에 각각 형성시킨 제1산화막(110) 및 제2산화막(120)을 형성시키는 제1공정과, 상기 제1산화막(110)의 중심부에 원형의 좁은 제1구멍형태로 패턴영역을 패터닝하는 제2공정과, 상기 제2공정의 패턴에 따라 상기 제1구멍을 깊게 반응성이온에칭하여 제1구멍을 따라 홈을 형성하는 제3공정과, 상기 에칭된 제1산화막(110) 위해 내에칭성의 패시베이션층(130)을 성막하는 제4공정과, 상기 제2산화막(120)의 중심부에 원형의 넓은 제2구멍형태로 패턴영역을 패터닝하는 제5공정과, 상기 제2산화막(120)을 습식 에칭하여 패시베이션층(130)을 만나서 약각 더 깊게 에칭하는 제5공정과, 상기 제1산화막(110) 위의 패시베이션층(130), 제1산화막(110), 제2산화막(120)을 제거하는 제6공정과, 상기 실리콘 기판(100)표면에 내열성코팅하는 제7공정으로 구성된다. In order to achieve the above object, the present invention provides a first process for forming the first oxide film 110 and the second oxide film 120 formed on the surface and bottom surface of the silicon substrate 100, and the first oxide film ( A second step of patterning the pattern region in the shape of a circular narrow first hole in the center of the center; and forming a groove along the first hole by deeply etching the first hole according to the pattern of the second step. A third process, a fourth process of forming a etch-resistant passivation layer 130 for the etched first oxide film 110, and a pattern of a circular second wide hole in the center of the second oxide film 120. A fifth process of patterning a region, a fifth process of wet etching the second oxide film 120 to meet the passivation layer 130, and then etching the deeper portion of the region, and a passivation layer 130 on the first oxide film 110. ), A sixth process of removing the first oxide film 110 and the second oxide film 120, and the silicon substrate ( 100) a seventh step of heat-resistant coating on the surface.
본 발명에 대하여 도 1a 내지 도 2의 도면을 참조하여 상세하게 개시한다. The present invention will be described in detail with reference to the drawings of FIGS. 1A to 2.
먼저 실리콘기판(100)을 준비한다. 예컨대 실리콘 기판(100)은 (1, 0, 0)의 실리콘 결정성을 갖는 양면 폴리쉬드(polished)기판을 이용하는 것이 바람직하다. First, the silicon substrate 100 is prepared. For example, the silicon substrate 100 preferably uses a double-sided polished substrate having silicon crystallinity of (1, 0, 0).
실리콘 기판(100) 표면 및 바닥면에 각각 형성시킨 제1산화막(110) 및 제2산화막(120)을 형성시킨다. 이는 상면에 성장시킨 제1 산화막을 패터닝하고 깊게 이온성반응에칭(Deep Reactive Ion Etching ; DRIE)함으로써, 실리콘기판(100)을 원하는 모양으로 에칭하기 위한 단계이다. The first oxide film 110 and the second oxide film 120 formed on the surface and bottom of the silicon substrate 100 are formed, respectively. This is a step for etching the silicon substrate 100 in a desired shape by patterning the first oxide film grown on the top surface and deeply ionic reaction etching (DRIE).
상기 제1산화막(110)의 중심부, 즉 상면의 중심부에 원형의 좁은 제1구멍형태로 패터닝한다. 이 때 형성되는 제1 구멍은 노즐(140)의 구멍이 되는 부분이다. A pattern is formed in the shape of a circular narrow first hole in the center of the first oxide film 110, that is, the center of the upper surface. The first hole formed at this time is a portion that becomes the hole of the nozzle 140.
상기 제2공정의 패턴에 따라 상기 제1구멍을 깊게 반응성이온에칭하여 제1구멍을 따라 홈을 형성한다. 주지하는 바와같이 RIE는 아이소트로픽(Isotropic)한 공정으로서 수직에 가깝게 실리콘기판(100)을 깊게 에칭시킨다. According to the pattern of the second process, the first hole is deeply etched to form a groove along the first hole. As is well known, RIE is an isotropic process that deeply etches the silicon substrate 100 close to the vertical.
상기 에칭된 제1산화막(110) 위에 내에칭성의 패시베이션층(130)을 성막한다. 패시베이션층(130)은 바람직하게는 질화규소(SiNx)막을 형성시킨다. 이와 같은 질화규소막은 화학물질로 하는 에칭에는 내에칭성을 가지기 때문에 식각되지 않는다.A etchable passivation layer 130 is formed on the etched first oxide film 110. The passivation layer 130 preferably forms a silicon nitride (SiN x ) film. Such a silicon nitride film is not etched because it has resistance to etching with chemicals.
상기 제2산화막(120)의 중심부, 즉 바닥면의 중심부에 상기 제1구멍보다 큰 원형의 넓은 제2구멍형태로 패턴영역을 패터닝한다. 이와 같은 제2구멍은 노즐(140)을 통과하기 전의 잉크가 통과하는 부분이므로 충분히 크게 패터닝한다. The pattern region is patterned in the center of the second oxide film 120, that is, in the center of the bottom surface, in the shape of a circular wide second hole larger than the first hole. Since the second hole is a portion through which ink before passing through the nozzle 140 passes, the second hole is patterned sufficiently large.
상기 제2산화막(120)을 패터닝한 부분, 즉 실리콘기판(100)을 습식 에칭한다. 이 때, 습식 에칭액은 KOH를 사용하여 에칭하며, 실리콘기판(100)의 결정성에 의해 경사를 가지게 된다. 이와 같이 내측으로 점점 폭이 줄어드는 형태로 에칭되는 도중에 상면에 성막된 패시베이션층(130)을 만나면, 패시베이션층(130)의 내에칭성에 의해 패시베이션층(130)은 에칭되지 않게된다. 패시베이션층(130)을 만난 이후에 실리콘기판(100)을 패시베이션층(130)보다 약간 더 에칭한다. The patterned portion of the second oxide film 120, that is, the silicon substrate 100 is wet etched. At this time, the wet etching solution is etched using KOH, and has a slope due to the crystallinity of the silicon substrate 100. When the passivation layer 130 formed on the upper surface is encountered while being etched in such a manner that the width thereof is gradually reduced inward, the passivation layer 130 is not etched due to the etching resistance of the passivation layer 130. After encountering the passivation layer 130, the silicon substrate 100 is etched slightly more than the passivation layer 130.
상부에 성막된 패시베이션층(130)을 제거한다. 예컨대 반응성이온에칭 등의 방법을 이용하여 패시베이션층(130)을 제거한다. 또한, 제2산화막(120) 및 제2산화막(120)을 제거한다. 이와 같이 제거함으로써, 노즐(140) 형태의 실리콘기판(100)만이 남게 된다. The passivation layer 130 deposited on the top is removed. For example, the passivation layer 130 is removed using a method such as reactive ion etching. In addition, the second oxide film 120 and the second oxide film 120 are removed. By this removal, only the silicon substrate 100 in the form of the nozzle 140 remains.
이와 같은 실리콘 기판(100)은 내열성 및 내구성을 향상시키기 위하여 코팅 등의 작업을 거치게 된다. The silicon substrate 100 is subjected to a work such as coating in order to improve heat resistance and durability.
이와 같은 코팅 공정의 예로서는 질화규소(SiNx)막을 성막하거나, 실리콘카바이트(SiC)를 고르게 성막하거나, 혹은 실리콘기판(100)의 결정막의 표면에 실란(SiH4)을 이용한 처리를 실시함으로써, 섬형상의 종결정을 자기조직화시켜서 형성하는 방법 중에 하나를 이용하여 표면을 코팅하거나 처리함으로써, 내열성 및 내구성을 증가시킨다.As an example of such a coating process, a silicon nitride (SiN x ) film is formed, silicon carbide (SiC) is formed evenly, or the surface of the crystal film of the silicon substrate 100 is treated with silane (SiH 4 ) to form islands. By coating or treating the surface using one of the methods of self-organizing and forming the seed crystals, the heat resistance and durability are increased.
이와 같이 형성된 프린터용 노즐(140)에 스테인레스(Steel Use Stainless ; SUS) 계열의 홀더(210)를 접착제(220)를 이용하여 노즐(140)의 반대면과 스테인레스 홀더(210)를 부착한다. The opposite side of the nozzle 140 and the stainless holder 210 are attached to the printer nozzle 140 formed as described above using a holder 220 of a stainless use stainless steel (SUS) series using an adhesive 220.
이와 같은 스테인레스는 대전장치에 연결성이 용이하며, 가공이 용이하고 또한, 열전도성이 뛰어나기 때문에 노즐(140)에 가해지는 열을 분산시킬 수 있다. Such stainless steel can be easily connected to a charging device, easy to process, and excellent in thermal conductivity, thereby dispersing heat applied to the nozzle 140.
이 때, 상기 스테인레스 홀더(210)에는 나사산을 형성시켜 대전장치와 탈부착이 가능하도록 구성하며, 진공밀폐시킴으로써, 노즐(140)에 남아 있는 잉여 잉크가 굳어 노즐(140)이 막히는 것을 방지한다. At this time, the stainless holder 210 is configured to be detachable from the charging device by forming a screw thread, and by vacuum sealing, excess ink remaining in the nozzle 140 is hardened to prevent the nozzle 140 from being blocked.
따라서, 본 발명은 내열성과 내구성을 가지며, 고 해상도의 출력물을 출력할 수 있는 10-20㎛의 직경을 갖는 노즐(140)을 반도체의 공정을 이용하여 제조할 수 있으므로 대량 생산 할 수 있으며, 또한, 노즐(140)에 발생하는 열을 스테인레스로 제조된 홀더(210)를 구성하여 노즐(140)에 가해지는 열을 분산시킬 수 있는 효과가 있다. Therefore, the present invention can be mass-produced because the nozzle 140 having a heat resistance and durability and having a diameter of 10-20 μm capable of outputting a high resolution output can be manufactured using a semiconductor process. In addition, by forming the holder 210 made of stainless steel with heat generated in the nozzle 140, the heat applied to the nozzle 140 may be dispersed.
도 1a 내지 도 1j는 본 발명에 따른 디스팬싱 노즐을 제조하는 공정의 일실시예를 순차적으로 나타낸 도면,1A to 1J are views sequentially showing one embodiment of a process for manufacturing a dispensing nozzle according to the present invention;
도 2는 본 발명에 따른 디스팬싱 노즐을 홀더와 결합하는 일실시예를 나타낸 도면. 2 is a view showing an embodiment for coupling the dispensing nozzle according to the present invention with a holder.
<도면의 주요부분에 대한 부호의 간단한 설명><Brief description of symbols for the main parts of the drawings>
100 : 실리콘기판 110, 120 : 산화막100: silicon substrate 110, 120: oxide film
130 : 패시베이션층 140 : 노즐130: passivation layer 140: nozzle
210 : 홀더 220 : 접착제210: holder 220: adhesive
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| US8833296B2 (en) | 2009-11-10 | 2014-09-16 | Samsung Display Co., Ltd. | Dispensing apparatus and dispensing method |
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