KR20050040335A - The method for fabricating the lcd device - Google Patents

Abstract

The present invention relates to a method of manufacturing a liquid crystal display device that minimizes damage in a region other than a pad during a pad opening process by an AP plasma. In particular, the method of manufacturing a liquid crystal display device according to the present invention provides a gate wiring on a lower substrate. And forming a thin film array including data wirings and gate pads and data pads forming a plurality of pad units, forming a color filter layer on an upper substrate, and opposing-adhering the upper and lower substrates; And cutting the bonded upper and lower substrates in cell units, and opening the bonded gate pad and / or data pad for each pad unit.

Description

The method for fabricating the LCD device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device (LCD), and more particularly, to a method for manufacturing a liquid crystal display device including an open process of a liquid crystal display device pad portion.

BACKGROUND ART Liquid crystal display devices, which have recently been spotlighted as flat panel display devices, have been actively researched due to their high contrast ratio, suitable for gradation display or moving picture display, and low power consumption.

In particular, it can be manufactured with a thin thickness so that it can be used as an ultra-thin display device such as a wall-mounted TV in the future, and is light in weight and consumes significantly less power than a CRT CRT. It is being used as a next generation display device.

Such a liquid crystal display device generally includes a thin film array substrate having a thin film transistor and a pixel electrode formed in each pixel region defined by gate wiring and data wiring, a color filter substrate having a color filter layer and a common electrode formed therebetween, It is composed of an interposed liquid crystal layer, by applying a voltage to the electrode to rearrange the liquid crystal molecules of the liquid crystal layer to adjust the amount of light transmitted to display an image.

At this time, the color filter substrate and the thin film array substrate are bonded by a sealant such as an epoxy resin, and the driving circuit on the printed circuit board (PCB) is connected to the thin film array substrate through a tape carrier package (TCP).

As illustrated in FIG. 1, the thin film array substrate is connected to an external driving circuit by an active region in which each pixel is defined by the gate line 112 and the data line 115, and a gate pad 122 and a data pad 125. The pad portion is divided into areas.

Specifically, a plurality of gate wirings 112 and data wirings 115 are formed on the glass substrate in the active region, and a thin film transistor (A) as a switching element is formed at the intersection of the gate wirings 112 and the data wirings 115. TFT: Thin Film Transistor (not shown) is formed.

In the pad region, a plurality of gate pads 122 for applying a gate driving signal of a gate driver to each of the gate lines 112 and a data signal of a data driver to the data lines 115 are provided. A plurality of data pads 125 are formed.

A gate pad 122 extending from the gate wiring 112 and a data pad 125 extending from the data wiring 115 are formed in the pad portion region to interface an electrical signal with an external driving circuit, respectively.

That is, in order to drive the liquid crystal display device, the gate pad 122 and the data pad 125 are opened and connected to a driving circuit for supplying a driving signal. The data input signal supplied from the driving circuit is connected to its own control signal. Separate and pass to each pixel.

Hereinafter, a manufacturing method of a liquid crystal display device according to the related art will be described with reference to the accompanying drawings.

2A through 2D are cross-sectional views illustrating a manufacturing process of a liquid crystal display device.

First, as shown in FIG. 2A, a low-resistance metal material such as aluminum (Al), aluminum alloy (AlNd), molybdenum (Mo), chromium (Cr), or the like is deposited on the transparent glass substrate 111 by a sputtering method. Patterning is performed to form the gate pad 122 in the pad portion region.

At this time, a gate wiring (not shown) and a gate electrode 112 of an active region are formed simultaneously with the gate pad 122.

Next, silicon oxide (SiOx) or silicon nitride (SiNx), which is an inorganic material having good insulation voltage characteristics, is deposited on the entire surface including the gate pad 122 by a plasma-enhanced chemical vapor deposition method. To form.

Subsequently, amorphous silicon (a-Si: H) is deposited and patterned on the gate insulating layer 113 by plasma chemical vapor deposition using SiH ₄ and H ₂ mixed gas, and then patterned on the gate electrode 112. The semiconductor layer 114 is formed in an island shape.

Subsequently, as shown in FIG. 2B, a low resistance metal such as aluminum (Al), aluminum alloy (AlNd), molybdenum (Mo), chromium (Cr), or the like is formed on the gate insulating layer 113 including the semiconductor layer 114. The material is deposited by a sputtering method and patterned by photolithography to form a data pad 125 in the pad region.

At this time, data lines (not shown) and source / drain electrodes 115a and 115b in the active region are formed at the same time as the data pad 125.

Next, as shown in FIG. 2C, an inorganic insulating material such as silicon nitride or silicon oxide is deposited on the entire surface including the data pad 125, or an organic insulating material such as benzocyclobutene (BCB) or an acrylic material is coated to form a protective film 116. ).

Subsequently, the passivation layer 116 is etched to form a contact hole 171 through which the drain electrode 115b of the active region is exposed by photo etching, and the gate pad 122 and the data pad 125 of the pad portion region are exposed. Pad opening regions 181a and 181b are formed by selectively removing the passivation layer 116 and the gate insulating layer 113 so that the light may be exposed.

At this time, in order to open the gate pad 122 in the pad portion region, the laminated film of the gate insulating film 113 and the protective film 116 on the gate pad is etched.

Thereafter, indium tin oxide (ITO) or indium zinc oxide (IZO) or the like is formed on the passivation layer 116 so as to be connected to the gate pad 122 and the data pad 125 through the pad open regions 181a and 181b, respectively. The transparent conductive material of is deposited and patterned. At this time, the pixel electrode 117 in the active region and the transparent conductive film 127 in the pad portion region are simultaneously formed.

Thereafter, the gate pads 115 and the data pads 125 connected to the transparent conductive film 127 are connected to a mass production system line (MPS line) for a test.

The thin film array substrate configured as described above undergoes a Mass Production System (MPS) test process to test defects such as line defects and point defects before bonding to the color filter substrate.

The test test is performed by applying a signal voltage through a gate pad connected to the gate line of the active region and a data pad connected to the data line to determine whether the substrate is defective.

However, if the pad portion is opened before the opposing bonding of the upper and lower substrates, foreign matter penetrates into the pad portion until bonding or re-adhering the bonding occurs.

In addition, in the low mask process, when the contact between the pixel electrode and the drain region is unnecessary, a separate contact hole forming process must be performed to open the gate pad and the data pad, thereby limiting the process simplification.

The present invention has been made to solve the above problems, to provide a method of manufacturing a liquid crystal display device by simplifying the process by opening the pad at once after bonding the upper and lower substrates, without opening the pad when manufacturing the thin film array substrate. The purpose is.

According to an aspect of the present invention, there is provided a method of manufacturing a liquid crystal display device, the method including: forming a thin film array including a gate wiring and a data wiring on a lower substrate, and a plurality of gate pads and data pads forming a plurality of pad units; Forming a color filter layer on the substrate, opposing-adhering the upper and lower substrates, cutting the bonded upper and lower substrates in cell units, and forming the bonded gate pad and / or data pad. And opening the pad unit by pad unit.

Hereinafter, a manufacturing method of a liquid crystal display device according to the present invention will be described with reference to the accompanying drawings.

3 is a flow chart showing a manufacturing procedure of the liquid crystal display device according to the present invention, FIG. 4 is a perspective view of a general liquid crystal display device, and FIG. 5 is a process sectional view showing a pad opening step using the AP plasma device of the present invention.

As described above, the liquid crystal display device is divided into a color filter substrate on which a color filter layer for color realization is formed, an active region in which a switching element for changing the arrangement direction of liquid crystal molecules is formed, and a pad portion region connected to an external driving circuit. The thin film array substrate and the liquid crystal layer formed between the two substrates, the manufacturing method of the liquid crystal display device as follows.

First, as shown in the flowchart of FIG. 3, a thin film array substrate and a color filter substrate are manufactured (S1 and S2).

That is, a pixel region is defined by crossing gate lines and data lines in an active region of a thin film array substrate, and a thin film transistor, which is a stacked layer of a gate electrode, a gate insulating film, a semiconductor layer, and a source / drain electrode, is formed in each pixel region. Subsequently, a pixel electrode connected to the drain electrode of the thin film transistor is formed.

In this case, a gate pad and a data pad are formed in the pad region of the thin film array substrate.

Specifically, a gate metal layer is deposited and patterned on a substrate to form a gate line in a straight line, a gate electrode branched from the gate line, and a gate pad extending from the gate line in a pad portion region.

Thereafter, silicon nitride or silicon oxide is deposited on the entire surface including the gate wiring to form a gate insulating film, and a semiconductor layer of amorphous silicon is formed on the gate insulating film on the gate electrode.

Next, a data line crossing the gate line, a source / drain electrode branched from the data line and formed on the semiconductor layer, and a data pad extending from the data line in a pad portion region are formed.

Subsequently, a pixel electrode which is a transparent conductive material layer connected to the drain electrode is formed, and then a protective film is formed on the entire surface including the pixel electrode.

Therefore, an insulating layer of a gate insulating film and a protective film is laminated on the gate pad, and the protective film is coated on the data pad. The insulating layer on the pad is opened through a later process to connect with an external driving circuit.

Meanwhile, after forming a black matrix on the color filter substrate, a color filter layer of R, G, and B is formed between the black matrices, and a common electrode, which is a transparent conductive material layer, is formed on the entire surface including the color filter layer. do.

As described above, after the thin film array substrate and the color filter substrate are manufactured, the two substrates are opposed to each other (S3).

That is, the sealing agent of the epoxy resin serving as an adhesive on the thin film array substrate is formed in the remaining regions except for the liquid crystal inlet, and evenly formed spacers are formed on the inner surface of the color filter substrate, and then the thin film array substrate and the color filter substrate. To oppose.

Thereafter, high pressure is applied to the two bonded substrates as described above, thereby curing the sealant while keeping the gap between the substrates constant, thereby completely bonding the two substrates.

Next, the two bonded substrates are cut into desired product sizes through a scribe process and a break process (S4 and S5).

That is, a scribe process is performed to form a crack using a scribe wheel having a constant pressure and speed on the surface of the color filter substrate in order to cut the two bonded substrates to the required size. In this case, the scribe wheel is made of a material having a higher hardness than the transparent glass substrate.

Subsequently, the liquid crystal panel is inverted and subjected to direct impact using a break bar on the thin film array substrate along the portion where the crack is formed, thereby separating the liquid crystal panel into cells having a desired size of the liquid crystal panel.

A liquid crystal panel having a required size is obtained by injecting and encapsulating a liquid crystal through the liquid crystal inlet between the two substrates cut as described above (S6).

That is, the bonded liquid crystal cell is introduced into the vacuum chamber to immerse the liquid crystal inlet in the liquid crystal tray, vacuum degassing the inside of the cell, and supply the inert gas to make the vacuum chamber at atmospheric pressure. At this time, the liquid crystal is injected between the substrate due to the difference in the atmospheric pressure between the liquid crystal cell and the vacuum chamber. Nitrogen (N ₂ ) gas is used as the inert gas, and the liquid crystal injection rate is determined by the gas supply rate.

In recent years, as the liquid crystal display device is enlarged in size, the liquid crystal dropping method does not depend on the above-mentioned liquid crystal injection method, but also the liquid crystal dropping method of forming a liquid crystal layer by dropping and spreading the liquid crystal evenly on the inner surface of the substrate before the substrate opposing bonding.

Subsequently, the cutting surface and the edge of the liquid crystal panel in the scribing / breaking process are ground using a grinding wheel having a predetermined mesh (S7). This is a process for preventing breakage of the cut surface of the liquid crystal panel when assembling and mounting the liquid crystal module.

The liquid crystal display device thus formed is as shown in FIG. 4.

In FIG. 4, an area where the gate pad 222 and the data pad 225 are exposed corresponds to a pad area. As described above, an insulating layer of a gate insulating film and a protective film is stacked on the gate pad 222. The protective film is coated on the data pad 225.

Therefore, in order to open the gate pad 222 and the data pad 225, the gate insulating film and the protective film should be removed.

Meanwhile, in the gate pad 222 and the data pad 225, as shown in FIG. 4, a plurality of pads form the pad unit 230.

Reference numeral 211 denotes a thin film array substrate, and 231 denotes a color filter substrate.

Finally, a pad opening process is performed to remove the insulating layers on the gate pad 222 and the data pad 225 (S7). An AP plasma (Atmospheric Pressure Plasma) device is used for the pad opening process.

The AP plasma apparatus includes a nozzle unit 500 corresponding to the position of the pad unit 230, an anode electrode, and a cathode electrode belonging to the nozzle unit 500 and having an anode electrode and a cathode electrode to radiate the plasma. A plurality of nozzles 501, an anode electrode line 543 connected to an anode electrode of the nozzle 501, a cathode electrode line 544 connected to a cathode electrode of the nozzle 501, and a plasma in which plasma is generated It consists of a discharge area (not shown).

In this case, the anode electrode is connected to a radio frequency (RF) power source, and the anode electrode and the cathode electrode are grounded to the same ground.

On the other hand, the nozzle unit 500 is equal to or larger than the size of the pad unit 230, and the size of the liquid crystal panel is different, the pad unit of each model is different from each other because the distance between the pad unit of each model is appropriately adjusted and applied We shall be able to.

This is a differentiation from the conventional AP plasma apparatus provided with nozzles for the entire pad portion area.

Therefore, when the conventional AP plasma apparatus is used, plasma is radiated between the pad unit 230 and the pad unit 230 to cause damage to areas other than the pad. Such a problem is prevented in advance.

The AP plasma nozzles may vary from the remote type of FIG. 6 and the direct type of FIG. 7.

6 is a process sectional view showing a pad opening step according to a first embodiment of the present invention, Figure 7 is a process sectional view showing a pad opening step according to a second embodiment of the present invention.

Specifically, in the remote type, as shown in FIG. 6, the anode electrode 553 and the cathode electrode 554, which are plasma sources, are disposed to face each other, and both electrodes are positioned on the lower substrate 211 of the liquid crystal display device. Type. This type is characterized in that the plasma 550 generated between the anode electrode 553 and the cathode electrode 554 is indirectly radiated to the pad portion of the lower substrate 211.

In the direct type, as shown in FIG. 7, the anode electrode 553 and the cathode electrode 554 are disposed to face each other, and the anode electrode 553 is positioned above the lower substrate 211 of the liquid crystal display device. The electrode 554 is a type which is located under the lower substrate 211, respectively. Such a direct type is characterized in that the plasma 550 directly collides with the lower substrate 211 disposed on the cathode electrode 554 to open the insulating film of the pad portion.

However, even in the remote type and the direct type, the size of the nozzle including the anode electrode 553 and the cathode electrode 554 is equal to or larger than the pad unit of the lower substrate 211, and the position thereof is the pad. The number of units is to be the same as the number of pad units.

In this case, reference numeral 570 denotes a conveying roller for conveying the lower substrate 211 from the previous step to the next step.

As a result, the gate insulating film and the protective film on the gate pad are removed to open the gate pad, and the protective film on the data pad is removed to open the data pad.

When the gate pad and / or data pad is opened by the AP plasma apparatus as described above, unlike the conventional process in which the open process is performed in the thin film array substrate fabrication process, the upper and lower substrates are bonded and then separated by cell units, and then opened at once. It is possible to simplify the substrate fabrication process.

Finally, a tab is attached to the pad open portion of the completed liquid crystal display device to check whether the liquid crystal display device wiring is short-circuited, and after the inspection is completed, the tab is removed again and the remaining devices are attached and assembled to display the liquid crystal display. The device is completed (S8).

The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and changes are possible in the art without departing from the technical spirit of the present invention. It will be clear to those of ordinary knowledge.

The manufacturing method of the liquid crystal display device of the present invention as described above has the following effects.

First, in the case of opening the gate pad and / or data pad with the AP plasma device, the substrate manufacturing process may be simplified by performing the open process once after the upper and lower substrates are bonded and separated by cell units.

Second, there are various models of the liquid crystal panel and the spacing of the pad units of each model is different from each other. Since the AP plasma device used in the present invention can be appropriately adjusted and applied according to the model, the efficiency of the equipment is high.

Third, since plasma is emitted only to the pad unit, damage of various patterns generated by plasma radiation between the pad unit and the pad unit is prevented.

1 is a plan view of a lower substrate of a general liquid crystal display device.

2A through 2D are cross-sectional views illustrating a manufacturing process of a liquid crystal display device.

3 is a flow chart showing a manufacturing procedure of the liquid crystal display device according to the present invention.

4 is a perspective view of a general liquid crystal display device.

5 is a process cross-sectional view showing a pad opening step using the AP plasma apparatus of the present invention.

6 is a process cross-sectional view showing a pad opening step according to a first embodiment of the present invention.

7 is a process cross-sectional view showing a pad opening step according to a second embodiment of the present invention.

* Explanation of symbols on the main parts of the drawings

211: lower substrate 231: upper substrate

213: gate insulating film 216: protective film

230: pad unit 222: gate pad

225: data pad 500: nozzle unit

501: nozzle 553: anode electrode

554 cathode electrode 550 plasma

Claims (11)

Forming a thin film array including a gate line and a data line on the lower substrate and a gate pad and a data pad forming a plurality of pad units; Forming a color filter layer on the upper substrate; Opposing the upper and lower substrates; Cutting the bonded upper and lower substrates in cell units; And opening the bonded gate pad and / or data pad for each pad unit. The method of claim 1, wherein the opening of each pad unit is performed by using an AP plasma apparatus. The method of claim 2, wherein the AP plasma device, A plasma discharge region, A nozzle unit connected to the plasma discharge region and corresponding to the pad unit position; And a plurality of nozzles belonging to the nozzle unit and provided with an anode electrode and a cathode electrode. 4. A method according to claim 3, wherein the nozzle unit is equal to or larger than the pad unit size. 4. The method of claim 3, wherein the nozzle unit is equal to the number of pad units. The method of claim 3, wherein the anode electrode is positioned above the lower substrate, and the cathode electrode is positioned below the lower substrate so as to face each other, and then emit plasma. The method of claim 3, wherein the anode electrode and the cathode electrode are positioned on the lower substrate so as to face each other to form a plasma. The method of claim 1, further comprising forming a liquid crystal layer between the upper and lower substrates before or after opening the gate pad or the data pad formed on the lower substrate. . The method of claim 1, wherein the forming of the thin film array comprises: Forming a gate wiring, a gate electrode, and a gate pad on the lower substrate; Forming a gate insulating film on the entire surface including the gate wiring; Forming a semiconductor layer on the gate insulating film of the gate electrode; Forming a source / drain electrode on the semiconductor layer and simultaneously forming a data line and a data pad; Forming a protective film on the entire surface including the data line; And forming a pixel electrode connected to the drain electrode. The method of claim 9, wherein the step of opening the gate pad, And arranging a nozzle unit of an AP plasma apparatus over the gate pad unit to remove the gate insulating film and the protective film over the gate pad. The method of claim 9, wherein the step of opening the data pad, And arranging a nozzle unit of an AP plasma apparatus above the data pad unit to remove the passivation layer on the data pad.