KR20050009876A - Method for removing photoresist pattern - Google Patents
Method for removing photoresist pattern Download PDFInfo
- Publication number
- KR20050009876A KR20050009876A KR1020030049178A KR20030049178A KR20050009876A KR 20050009876 A KR20050009876 A KR 20050009876A KR 1020030049178 A KR1020030049178 A KR 1020030049178A KR 20030049178 A KR20030049178 A KR 20030049178A KR 20050009876 A KR20050009876 A KR 20050009876A
- Authority
- KR
- South Korea
- Prior art keywords
- photoresist
- photoresist pattern
- photoresist layer
- polymer
- plasma
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
본 발명은 감광막 패턴의 제거 방법에 관한 것으로, 보다 구체적으로는 감광막 패턴을 마스크로 하고 높은 포텐셜(potential)을 가진 플라즈마 식각 공정을 진행하여 기판에 미세 크기의 홀을 식각하는 경우, 상기 플라즈마에 의해 데미지를 받은 감광막 및 상기 식각 과정에서 발생되는 폴리머까지 원활하게 제거할 수 있는 감광막 패턴의 제거 방법에 관한 것이다.The present invention relates to a method of removing a photoresist pattern, and more particularly, when the photoresist pattern is used as a mask and the plasma etching process having a high potential is performed to etch a hole having a fine size in a substrate, The present invention relates to a method of removing a photosensitive film pattern which can smoothly remove a damaged photosensitive film and a polymer generated in the etching process.
식각 대상인 비아홀 CD(Critical Dimension)가 작고 타겟이 깊은 경우 높은 포텐셜 플라즈마 식각 공정의 사용이 불가피하다. 이러한 플라즈마는 미세 홀을 디파인하는데 사용되는 KrF 스테퍼용 DUV 감광막에 심한 데미지를 유발하게 된다.If the via hole CD (Critical Dimension) is small and the target is deep, the use of the high potential plasma etching process is inevitable. This plasma causes severe damage to the DUV photoresist for KrF stepper used to fine-tune the micro holes.
종래의 기술에서는 상기 높은 포텐셜 플라즈마 식각 공정에 의해 데미지를입은 DUV계열의 감광막을 제거하기 위해, O2플라즈마를 이용하거나 O라디칼에 의한 고온 감광막 스트립(strip), 또는 오존(O3)을 이용하는 방법이 사용되었다.In the related art, in order to remove a DUV photosensitive film damaged by the high potential plasma etching process, a method using O2 plasma, a high temperature photosensitive film strip using O radicals, or ozone (O3) is used. It became.
먼저, O2 플라즈마에 의한 감광막 제거 방법은, 높은 포텐셜 플라즈마에 의해 데미지를 입은 감광막을 O2플라즈마를 이용하여 제거하나, 감광막의 경화를 가속시켜 감광막 잔류물이 잔존될 뿐만 아니라 폴리머 역시 강화됨에 따라, 후속 세정 공정 시 감광막 잔류물 및 폴리머가 다량 잔존하는 문제가 있다.First, the method of removing the photoresist by O2 plasma removes the photoresist damaged by the high potential plasma using O2 plasma, but accelerates the curing of the photoresist, so that the photoresist residue is not only remaining but also the polymer is strengthened. There is a problem that a large amount of photoresist residue and polymer remain in the cleaning process.
한편, O라디칼에 의한 고온 감광막 제거 방법은, 상술한 O2플라즈마보다는 덜 하지만 고온에서 진행되기 때문에 마찬가지로 감광막 경화를 유도함으로써, 감광막 잔류물 및 후속 세정 공정에서 폴리머가 다량 잔존하는 문제가 있다.On the other hand, the method of removing the high temperature photoresist film by O radical, which is less than the above-described O 2 plasma but proceeds at high temperature, also induces photoresist curing, thereby causing a problem that a large amount of polymer remains in the photoresist residue and subsequent cleaning processes.
마지막으로, 오존에 의한 감광막 제거 방법에서는, 상기 오존을 이용하여 감광막의 경화 현상없이 감광막을 제거할 수 있으며, 물리적인 데미지가 없고 화학적 반응력이 우수하여 세정 후에도 폴리머 제거를 원활하게 진행할 수 있다. 그러나, 단일 타입(single type)의 감광막 스트리퍼 장비 내에서 진행되기 때문에 공정 시간이 길고 배치타입 장비에 비해 동일 시간동안의 처리량이 매우 작은 문제가 있다.Finally, in the method of removing the photoresist by ozone, the photoresist can be removed without curing of the photoresist using the ozone. There is no physical damage and the chemical reaction force is excellent, so that the polymer can be smoothly removed even after cleaning. However, since the process proceeds in a single type photoresist stripper equipment, the processing time is long and the throughput during the same time is very small compared to the batch type equipment.
따라서, 본 발명의 목적은 높은 포텐셜 플라즈마에 의한 데미지를 입은 감광막의 경화 현사을 최소화하여 감광막을 제거하면서 폴리머를 용이하게 제거할 수 있는 감광막 패턴의 제거 방법을 제공하려는 것이다.Accordingly, an object of the present invention is to provide a method of removing a photoresist pattern that can easily remove a polymer while removing the photoresist by minimizing curing cure of the photoresist that is damaged by a high potential plasma.
도 1 내지 도 4는 본 발명에 따른 감광막 패턴의 제거 방법을 설명하기 위한 공정단면도.1 to 4 is a cross-sectional view for explaining a method of removing the photosensitive film pattern according to the present invention.
도 5는 감광막 스트리퍼 장비 내 챔버 온도 변화에 따른 감광막 패턴 및 폴리머가 제거되는 상태를 보인 그래프.5 is a graph illustrating a state in which a photoresist pattern and a polymer are removed according to a change in chamber temperature in a photoresist stripper device.
상기 목적을 달성하고자, 감광막 패턴을 마스크로 하고 기판에 높은 포텐셜 플라즈마 식각 공정을 실시하여 미세 크기의 비아홀을 형성한 다음, 상기 플라즈마에 의해 데미지를 입은 감광막 패턴을 제거하는 방법에 있어서, 본 발명은 배치 타입의 감광막 스트리퍼 장비 내에서, 50∼70℃의 저온에서 O라티칼 처리를 실시하여 감광막 패턴을 제거하는 단계와, 결과물에 120∼200℃의 고온에서 O라디칼 처리를 실시하여 비아홀 측벽에 형성된 폴리머의 내부 결합력을 약화시키는 단계를 포함하는 것을 특징으로 한다.In order to achieve the above object, a photoresist pattern is used as a mask and a high potential plasma etching process is performed on a substrate to form fine-sized via holes, and then the photoresist pattern damaged by the plasma is removed. In the batch type photoresist stripper equipment, O radical treatment is performed at a low temperature of 50 to 70 ° C. to remove the photoresist pattern, and the resultant is subjected to O radical treatment at a high temperature of 120 to 200 ° C., which is formed on the sidewall of the via hole. Weakening the internal binding force of the polymer.
이때, 상기 결과물에 120∼200℃의 고온에서 상기 O라디칼 처리를 실시한 다음, 습식 세정 공정을 진행하여 내부 결합력이 약화된 폴리머를 제거하는 단계를 추가하는 것이 바람직하다.At this time, the resultant is subjected to the O-radical treatment at a high temperature of 120 ~ 200 ℃, it is preferable to add a step of performing a wet cleaning process to remove the polymer weakened the internal bonding force.
(실시예)(Example)
도 1 내지 도 4는 본 발명에 따른 감광막 패턴의 제거 방법을 설명하기 위한 공정단면도이다.1 to 4 are process cross-sectional views for explaining a method of removing a photosensitive film pattern according to the present invention.
본 발명의 실시예에 따른 감광막 패턴의 제거 방법은, 먼저, 도 1에 도시된 바와 같이, 소정의 패턴(미도시)을 포함한 기판(1)을 제공한다. 이어, 상기 기판(1) 상에 절연막(2)를 증착하고 나서, 상기 절연막(2) 상에 감광막을 도포하고 노광 및 현상하여 소정 패턴을 노출시키는 감광막 패턴(3)을 형성한다.In the method of removing a photoresist pattern according to an embodiment of the present invention, first, as shown in FIG. 1, a substrate 1 including a predetermined pattern (not shown) is provided. Subsequently, after the insulating film 2 is deposited on the substrate 1, a photoresist film is coated on the insulating film 2, and the photoresist film pattern 3 is formed to expose a predetermined pattern by exposing and developing the photoresist film.
그런 다음, 상기 감광막 패턴(3)을 마스크로 하고 높은 포텐셜을 가진 플라즈마를 이용하여 상기 절연막(2)을 식각함으로서, 소정 패턴을 노출시키는 비아홀(4)을 형성한다. 이때, 감광막 패턴(3)은 플라즈마의 이온에 의해 심한 물리적 데미지를 입게 된다. 또한, 상기 식각 공정 시, 깊은 바이홀을 식각하는 과정에서, 원하는 측면 프로파일을 확보하기 위해서 불가피하게 다량의 결합력이 강한 폴리머(5)가 발생된다.Then, the photoresist pattern 3 is used as a mask and the insulating film 2 is etched by using a plasma having a high potential to form a via hole 4 exposing a predetermined pattern. At this time, the photoresist pattern 3 is severely damaged by the ions of the plasma. In addition, during the etching process, in the process of etching the deep bi-hole, in order to secure the desired side profile inevitably a large amount of binding force strong polymer (5) is generated.
이 후, 상기 결과물을 배치타입의 감광막 스트리퍼 장비(미도시) 내로 이송시키고 나서, 도 2에 도시된 바와 같이, 상기 감광막 패턴을 O라티칼(6)을 이용하여 제거한다.Thereafter, the resultant is transferred into a batch type photoresist stripper device (not shown), and then, as shown in FIG. 2, the photoresist pattern is removed using an Oratical 6.
상기 O라디칼(6)을 이용하여 감광막 패턴을 제거하는 과정을 자세하게 설명하면 다음과 같다.The process of removing the photoresist pattern using the O radical 6 will be described in detail as follows.
O →O+ + e + O* ------(Ⅰ)O → O + + e + O * ------ (Ⅰ)
여기서, O+는 O이온(ion)을, e는 전자(electron)을, O*은 O라디칼(radical)을 각각 나타낸다.Here, O + represents O ion, e represents electron, and O * represents O radical.
상기 (Ⅰ)식과 같이, O는 분해하여 O+, e, O* 각각의 형태로 존재하며, 이중에서 상기 O라디칼은 화학적 반응력이 대단히 큰 입자로 극성을 띄지 않는 특성을 가진다. 따라서, O라디칼은 감광막 패턴을 제거 과정에서 감광막 패턴에 물리적인 충격을 가하지 않는다.As shown in Formula (I), O is decomposed and present in the form of O +, e, O *, among which the O radical has a characteristic of not having polarity as a particle having a large chemical reaction force. Therefore, the O radical does not physically impact the photoresist pattern during the removal of the photoresist pattern.
한편, 배치 타입의 감광막 스트리퍼 장비는 챔버 외부에 알루미늄(Al) 터널(tunnel)(미도시)이 존재하며, 상기 알루미늄 터널에 의해 이온(O+)과 전자(e)가 트랩핑(trapping)된다. 따라서, 챔버 내에는 O라디칼만이 존재하게 되며, O라디칼의 화학적 반응만을 가지고 감광막 패턴을 제거하게 된다.Meanwhile, in the batch type photoresist stripper device, an aluminum (Al) tunnel (not shown) exists outside the chamber, and ions (O +) and electrons (e) are trapped by the aluminum tunnel. Therefore, only O radicals are present in the chamber, and only the chemical reaction of O radicals removes the photoresist pattern.
이때, 상기 배치 타입의 감광막 스트리퍼 장비 내 챔버 온도는 50∼70℃의저온을 유지하며, 상기 저온에서는 감광막 패턴은 경화되지 않는 특성을 가진다.At this time, the chamber temperature in the batch type photoresist stripper equipment is maintained at a low temperature of 50 ~ 70 ℃, the photosensitive film pattern is not cured at the low temperature.
이어, 도 3에 도시된 바와 같이, 상기 감광막 패턴이 제거된 기판에 계속적으로 O라디칼(6)을 공급하며, 이 과정에서 비아홀(4) 측벽의 폴리머는 내부 결합력이 약화된다. 이때, 상기 폴리머의 결합력을 약화시키는 공정에서, 배치 타입의 감광막 스트리퍼 장비 내 챔버 온도는 120∼200℃의 고온을 유지한다.3, the O radical 6 is continuously supplied to the substrate from which the photoresist pattern is removed. In this process, the polymer of the sidewall of the via hole 4 is weakened. At this time, in the process of weakening the binding force of the polymer, the chamber temperature in the batch type photoresist stripper equipment is maintained at a high temperature of 120 ~ 200 ℃.
도 3에서, 미설명된 도면부호 5a는 계속적인 O라디칼 공급에 따라 폴리머의 결합력이 약화되면서 폴리머가 일부 제거되고 잔류된 상태를 나타낸 것이다.In FIG. 3, reference numeral 5a, which is not described, shows a state in which the polymer is partially removed and remains as the binding force of the polymer is weakened by continuous O radical supply.
그런 다음, 도 4에 도시된 바와 같이, 상기 결과물에 습식 세정 공정을 진행하여 내부 결합력이 약화된 폴리머를 제거한다. 즉, 상기 120∼200℃의 고온에서 O라디칼을 공급하는 공정은 후속의 습식 세정 공정 시, 폴리머의 내부 결합력을 약화시켜 폴리머 제거 공정을 촉진시키는 역할을 한다.Then, as shown in Figure 4, the result is subjected to a wet cleaning process to remove the polymer weakened the internal bonding force. That is, the process of supplying the O radical at a high temperature of 120 to 200 ° C serves to accelerate the polymer removal process by weakening the internal bonding strength of the polymer during the subsequent wet cleaning process.
도 5는 감광막 스트리퍼 장비 내 챔버 온도 변화에 따른 감광막 패턴 및 폴리머가 제거되는 상태를 그래프로 나타낸 것이다.5 is a graph showing a state in which the photoresist pattern and the polymer are removed according to the change in the chamber temperature in the photoresist stripper device.
도 5에 도시된 바와 같이, 먼저 50∼70℃의 저온에서는 O라디칼에 의해 경화됨이 감광막 패턴이 제거되고(1단계), 120∼200℃의 고온에서는 계속적인 O라디칼에 의해 폴리머의 내부 결합력이 약화됨으로써, 후속의 습식 세정 공정 시 폴리머가 원활하게 제거된다. 이때, 1단계에서 초기온도가 50∼70℃라 할지라도 진행과정에서 온도가 90∼110℃까지 상승되는데, 이는 감광막 패턴의 연소열에 의해 자연적으로 상승함에 기인한다.As shown in FIG. 5, first, the photoresist pattern is removed by curing with O radicals at a low temperature of 50 to 70 ° C. (step 1), and the internal bonding force of the polymer is continued by O radicals at a high temperature of 120 to 200 ° C. By this weakening, the polymer is smoothly removed during the subsequent wet cleaning process. At this time, even if the initial temperature is 50 ~ 70 ℃ in the first step, the temperature rises to 90 ~ 110 ℃ in the process, due to the natural rise by the heat of combustion of the photosensitive film pattern.
이상에서와 같이, 본 발명은 50∼70℃의 저온에서, O라디칼에 의해 화학적 반응만을 이용하여 플라즈마 식각 공정으로 인해 데미지를 받은 감광막 패턴을 제거함으로써, 감광막 패턴의 경화를 최소화할 수 있어 감광막이 잔류되는 것을 방지할 수 있다.As described above, the present invention can minimize the curing of the photoresist pattern by removing the photoresist pattern damaged by the plasma etching process using only a chemical reaction by O radical at a low temperature of 50 ~ 70 ℃, the photoresist film is It can be prevented from remaining.
또한, 본 발명은 상기 저온 처리 공정을 진행한 후, 상기 결과물에 O라디칼에 의한 120∼200℃의 고온처리를 실시함으로써, 비아홀 내부에 불가피하게 다량 발생된 폴리머의 내부 결합력을 약화시켜 후속의 습식 세정 공정에서 폴리머 제거가 용이하게 된다.In addition, the present invention is subjected to a high temperature treatment of 120 ~ 200 ℃ by O radicals after the low-temperature treatment process, thereby weakening the internal binding force of the polymer inevitably generated in the via hole by the subsequent wet type Polymer removal is facilitated in the cleaning process.
한편, 본 발명에서는 배치 타입의 장비내에서 감광막 패턴의 제거 공정을 진행함으로써, 기존의 단일 타입(single type)에 비해 동일 시간동안의 처리량이 많은 이점이 있다.On the other hand, in the present invention, by proceeding the removal process of the photosensitive film pattern in the batch-type equipment, there is an advantage that a large amount of throughput during the same time compared to the conventional single type (single type).
기타, 본 발명은 그 요지를 일탈하지 않는 범위에서 다양하게 변경하여 실시할 수 있다.In addition, this invention can be implemented in various changes within the range which does not deviate from the summary.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020030049178A KR20050009876A (en) | 2003-07-18 | 2003-07-18 | Method for removing photoresist pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020030049178A KR20050009876A (en) | 2003-07-18 | 2003-07-18 | Method for removing photoresist pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20050009876A true KR20050009876A (en) | 2005-01-26 |
Family
ID=37222462
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020030049178A KR20050009876A (en) | 2003-07-18 | 2003-07-18 | Method for removing photoresist pattern |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR20050009876A (en) |
-
2003
- 2003-07-18 KR KR1020030049178A patent/KR20050009876A/en not_active Application Discontinuation
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI625784B (en) | Trench and hole patterning with euv resists using dual frequency capacitively coupled plasma (ccp) | |
| US10438797B2 (en) | Method of quasi atomic layer etching | |
| US8247302B2 (en) | Methods of fabricating substrates | |
| KR100918864B1 (en) | Method for processing plasma | |
| US6358676B1 (en) | Method for reworking photoresist | |
| US7635649B2 (en) | Method for manufacturing semiconductor device | |
| JP3277394B2 (en) | Method for manufacturing semiconductor device | |
| KR20160030378A (en) | Method for patterning differing critical dimensions at sub-resolution scales | |
| JP2000091318A (en) | Manufacture of semiconductor device | |
| JPH06177089A (en) | Manufacture of semiconductor device | |
| US9773649B2 (en) | Dry development and image transfer of si-containing self-assembled block copolymers | |
| TWI689007B (en) | Etching method | |
| KR20050009876A (en) | Method for removing photoresist pattern | |
| US5840203A (en) | In-situ bake step in plasma ash process to prevent corrosion | |
| CN112863999B (en) | Etching method | |
| KR20000000680A (en) | Removing method of a photoresist | |
| KR100570205B1 (en) | Method for removing the photoresist of semiconductor device | |
| US20090032192A1 (en) | Method for Resist Strip in Presence of Low K Dielectric Material and Apparatus for Performing the Same | |
| KR20120009443A (en) | Method for low-k dielectric etch with reduced damage | |
| JPH11258811A (en) | Chemically treated photoresist having resistance to tonic bombardment treatment | |
| KR20020074002A (en) | Method for manufacturing semiconductor device | |
| JP2007027574A (en) | Substrate processing method | |
| CN111989766A (en) | Etching method and substrate processing apparatus | |
| KR100613097B1 (en) | Method for manufacturing of the semiconductor device | |
| KR100720533B1 (en) | Method for cleaning after etching process |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| N231 | Notification of change of applicant | ||
| WITN | Withdrawal due to no request for examination |