KR200490445Y1 - Plasma process chamber with separated gas feed lines - Google Patents

Plasma process chamber with separated gas feed lines Download PDF

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KR200490445Y1
KR200490445Y1 KR2020150003835U KR20150003835U KR200490445Y1 KR 200490445 Y1 KR200490445 Y1 KR 200490445Y1 KR 2020150003835 U KR2020150003835 U KR 2020150003835U KR 20150003835 U KR20150003835 U KR 20150003835U KR 200490445 Y1 KR200490445 Y1 KR 200490445Y1
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conduit
source
feed line
coupled
plasma processing
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KR2020150003835U
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KR20150004651U (en
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산제이 디. 야다브
주르주얀 제리 첸
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)

Abstract

A method and apparatus for separately providing precursor gases to a plasma processing system is coupled by a first feed line and a second feed line to a remote plasma source disposed on a chamber, the first precursor source and the second precursor source. ; And a third precursor source comprising a fluorine containing gas coupled by a third feed line separated from the first feed line and the second feed line to an output conduit extending between the remote plasma source and the chamber.

Figure R2020150003835

Description

Plasma process chamber with separated gas feed lines {PLASMA PROCESS CHAMBER WITH SEPARATED GAS FEED LINES}

Embodiments disclosed herein generally relate to a method and apparatus for processing substrates such as solar panel substrates, flat panel substrates, or semiconductor substrates using plasma.

[0002] Plasma enhanced chemical vapor deposition (PECVD) is employed to deposit thin films on substrates such as semiconductor substrates, solar panel substrates, liquid crystal display (LCD) substrates, and organic light emitting diode (OLED) displays. Generally used. PECVD is generally accomplished by introducing a precursor gas into a vacuum chamber having a substrate disposed on a substrate support. The vacuum chamber may be coupled to a remote plasma chamber located outside of the vacuum chamber that energizes (eg, excites) the cleaning gases with plasma cleaning gases before entering the vacuum chamber. A portion of the precursor gas is typically directed through the remote plasma chamber so that it can be introduced into a gaseous state into the vacuum chamber. The precursor gas is then flowed to a distribution plate placed near the top of the vacuum chamber. The precursor gas may be energized in a vacuum chamber by applying radio frequency (RF) power to the chamber from one or more RF sources coupled to the chamber. The excited gases react to form a layer of material on the surface of the substrate located on the temperature controlled substrate support. The distribution plate is generally connected to an RF power source and the substrate support is typically connected to the chamber body to provide an RF current return path.

However, some of the precursor gases used to form the layer may be reactive with other precursor gases before reaching the substrate. Reactions between these gases tend to form particles on the substrate, which is undesirable. Therefore, there is a need for a PECVD chamber with gas feed lines that prevents mixing of precursor gases prior to deposition.

Embodiments disclosed in the present invention generally relate to a method and apparatus for plasma processing a substrate. More specifically, embodiments disclosed in the present invention provide a plasma processing chamber having separate gas feed lines.

In one embodiment, a plasma processing chamber is provided. The chamber includes a first precursor source and a second precursor source, coupled by a first feed line and a second feed line, to a remote plasma source disposed on the chamber; And a third precursor source comprising a fluorine-containing gas, coupled to an output conduit extending between the chamber and the remote plasma source, by a third feed line separated from the first feed line and the second feed line. .

In another embodiment, a plasma processing system is described. The plasma processing system includes a chamber; A first electrode disposed in the chamber, the first electrode facilitating generation of a plasma in the chamber and movable relative to a second electrode in the chamber; A first precursor source and a second precursor source, coupled by a first feed line and a second feed line, to a remote plasma source disposed on the chamber; And a third precursor source comprising a fluorine-containing gas, coupled to an output conduit extending between the chamber and the remote plasma source by a third feed line separated from the first feed line and the second feed line.

[0007] A more specific description of the embodiments disclosed in the present invention, briefly summarized above in a way that the above-listed features of the present disclosure can be understood in detail, may be made with reference to embodiments, some of which are It is shown in the accompanying drawings. It should be noted, however, that the appended drawings illustrate only typical embodiments of the present disclosure and should not be regarded as limiting the scope of the present disclosure, since the present disclosure may allow for other equally effective embodiments. to be.
1 is a schematic cross-sectional view of one embodiment of a plasma processing system.
2A and 2B are schematic views of a portion of a chamber body, showing, in front and plan view, respectively, an embodiment of a coupling of a processing chamber and feed lines and separate gas feed lines.
3 is a schematic diagram of a portion of another embodiment of separate gas feed lines.
4A-4D are various views illustrating one embodiment of a perforated plate for use with the flange shown in FIG. 2B.
To facilitate understanding, the same reference numbers have been used where possible to indicate the same elements common to the figures. It is contemplated that elements and / or process steps of one embodiment may be beneficially included in other embodiments without further explanation.

Embodiments disclosed in the present invention generally relate to a method and apparatus for plasma processing a substrate. More specifically, embodiments disclosed in the present invention provide a plasma processing chamber having separate gas feed lines. Embodiments described in the present invention relate to methods of depositing materials on a substrate by enhancing plasma formation and providing reduction of particles in the deposited materials. In the description that follows, reference will be made to a PECVD chamber, but embodiments of the present invention, to name just a few, include physical vapor deposition (PVD) chambers, etching chambers, semiconductor processing chambers, solar cell processing chambers, and It should be understood that it can also be implemented in other chambers, including organic light emitting display (OLED) processing chambers. Suitable chambers that can be used are available from AKT America, Inc., a subsidiary of Applied Materials, Inc. of Santa Clara, California. It should be understood that the embodiments discussed in the present invention may also be practiced in chambers available from other manufacturers.

Embodiments of the present disclosure are generally used when processing rectangular substrates, such as substrates for liquid crystal displays or flat panels and substrates for solar panels. Other suitable substrates may be circular, such as semiconductor substrates. Chambers used to process substrates typically include a substrate transfer port formed on the sidewall of the chamber for transfer of the substrate. Embodiments disclosed in the present invention can be used to process substrates of any size or shape. However, embodiments disclosed in the present invention provide particular advantages for substrates having a plan surface area of about 15,600 cm 2, including substrates having a planar surface area of about 90,000 cm 2 surface area (or more).

1 is a schematic cross-sectional view of one embodiment of a plasma processing system 100. The plasma processing system 100 is structured on a large area substrate 101 for use in the manufacture of photovoltaic cells for liquid crystal displays (LCDs), flat panel displays, OLEDs, or solar cell arrays. And the large area substrate 101 using plasma when forming the devices and devices. Substrate 101 may be a thin sheet of metal, plastic, organic material, silicon, glass, quartz, or polymer, among other suitable materials. Substrate 101 may have a surface area greater than about 1 square meter, such as greater than about 2 square meters. In other embodiments, substrate 101 may include a planar surface area of about 15,600 cm 2 or more, such as about 90,000 cm 2 (or more) planar surface area. The structures may be thin film transistors or OLED structures, which may include a plurality of successive deposition and masking steps. Other structures may include p-n junctions for forming diodes for photovoltaic cells.

[0016] The plasma processing system 100 may include dielectric materials (eg, SiO 2 , SiO x N y , derivatives thereof, or combinations thereof), semiconductor materials on large area substrates 101. (Eg, Si and dopants), barrier materials (eg, SiN x , SiO x N y , or derivatives thereof) as well as hexamethyldisiloxane (HMDSO) It can be configured to deposit various materials. Specific examples of dielectric materials and semiconductor materials formed or deposited by plasma processing system 100 on large area substrates include epitaxial silicon, polycrystalline silicon, amorphous silicon, microcrystalline silicon, silicon germanium, germanium, silicon Dioxide, silicon oxynitride, silicon nitride, dopants thereof (eg, B, P, or As), derivatives thereof, or combinations thereof may be included. The plasma processing system 100 may also include argon, hydrogen, nitrogen for use as a purge gas or carrier gas (eg, Ar, H 2 , N 2 , He, derivatives thereof, or combinations thereof). And to receive gases such as helium, or combinations thereof.

As shown in FIG. 1, a plasma processing system 100 generally includes a chamber body that includes a bottom 117a and sidewalls 117b that at least partially define a processing volume 111. 102). The substrate support 104 is disposed in the processing volume 111. The substrate support 104 is adapted to support the substrate 101 on the top surface during processing. The substrate support 104 is coupled to an actuator 138 configured to move the substrate support at least vertically to facilitate transfer of the substrate 101 and / or between the substrate 101 and the showerhead assembly 103. Adjust the distance (D). One or more lift pins 110a-110d may extend through the substrate support 104. The lift pins 110a-110d contact the bottom 117a of the chamber body 102 when the substrate support 104 is lowered by the actuator 138 to facilitate the transfer of the substrate 101. And to support the substrate 101. In the processing position as shown in FIG. 1, the lift pins 110a-110d are identical to the upper surface of the substrate support 104 to allow the substrate 101 to lie flat on the substrate support 104. It is made to be at or slightly below it.

The showerhead assembly 103 is configured to supply processing gas from the primary gas source 122 to the processing volume 111. The plasma processing system 100 also includes an exhaust system 118 that is configured to apply negative pressure to the processing volume 111. The showerhead assembly 103 is generally disposed in a substantially parallel relationship opposite the substrate support 104.

In one embodiment, the remote plasma source 107 is coupled to the chamber body 102. The remote plasma source 107 may be used to supply gases to the processing volume 111. The remote plasma source 107 is coupled to the conduit 134 for supplying gases to the gas distribution plate 114 and to the processing volume 111. The remote plasma source 107 may also be coupled to the secondary gas source 126 and the cleaning gas source 119 as well as the primary gas source 122. Gases from the primary gas source 122 and the secondary gas source 126 may flow through the remote plasma source 107 and through the conduit 134 to the gas distribution plate 114 without energizing. have. Gases from the cleaning gas source 119 may flow through the remote plasma source 107, where the gas is energized into a plasma flowing through the gas distribution plate 114 for cleaning. The showerhead assembly 103 may include a gas distribution plate 114 and a backing plate 116. In one embodiment, the activated precursor gases are flowed through the gas distribution plate 114 into the processing volume 111. The backing plate 116 may function as a blocking plate to enable the formation of a volume 131 between the backing plate 116 and the gas distribution plate 114, at which volume 131 a uniform back pressure Can be obtained.

Gas distribution plate 114, backing plate 116, and conduit 134 are generally formed of electrically conductive materials and are in electrical communication with each other. The chamber body 102 is also formed of an electrically conductive material. The chamber body 102 is generally electrically insulated from the showerhead assembly 103. In one embodiment, the showerhead assembly 103 is mounted on the chamber body 102 by an insulator 135.

In one embodiment, the substrate support 104 is also electrically conductive, and the substrate support 104 and the showerhead assembly 103 generate a plasma 108 of precursor gases therebetween during processing and / or Configured to be opposite electrodes for holding. For example, a radio frequency (RF) power source 105 is generally used to generate the plasma 108 between the substrate support 104 and the showerhead assembly 103 before, during, and after processing, It can also be used to maintain energized species supplied from a remote plasma source 107. In one embodiment, the RF power source 105 is coupled to the showerhead assembly 103 by the first lead 106a of the impedance matching circuit 121. The second lead 106b of the impedance matching circuit 121 is electrically connected to the chamber body 102.

In one embodiment, the primary gas source 122 is argon (Ar), hydrogen (H 2 ), silanes (SiH 4 ), nitrogen-containing gases (N 2 , N 2 O, NH 3 , NF 3 ), and combinations thereof. Secondary gas source 126 may also be coupled to remote plasma source 107 by feed line 127. Secondary gas source 126 may comprise a precursor liquid, such as HMDSO, in one embodiment. Carrier gases such as helium (He) may also be included in the secondary gas source 126. Vaporizer 128 may be coupled to feed line 127 to vaporize precursor liquid from secondary gas source 126. In some embodiments, feed line 127 may also be heated to maintain a vapor phase of the precursor gas therein. In one embodiment, the feed line 127 is coupled to a feed line 129 disposed between the primary gas source 122 and the remote plasma source 107.

The conduit 134 is also coupled to the fluorine-containing gas source 124 via the feed line 130. The fluorine-containing gas source 124 may include fluorine-containing gases such as silicon tetrafluoride (SiF 4 ) in one example, which may include a primary gas source 122 and / or a secondary May react with gases from gas source 126. Therefore, to prevent unwanted reactions prior to entry of gases into the processing volume 111, the feed line 130 is directed around the remote plasma source 107 and conduits adjacent to the chamber body 102. Coupled to 134. The primary gas source 122, the secondary gas source 126, and the fluorine-containing gas source 124 may each include first, second, and third precursor sources. Similarly, feed line 129, feed line 127 and feed line 130 may include first, second, and third feed lines.

2A and 2B show part of a chamber body 102, showing in front and top views, respectively, an alternative embodiment of a separate gas feed lines and coupling of the processing line with the processing system 100, respectively. Are schematic diagrams of. The chamber body 102 includes a top 200 where a remote plasma source 107 can be located. Primary gas source 122 and secondary gas source 126 may be directly coupled to remote plasma source 107. Gases from the primary gas source 122 and the secondary gas source 126 may flow through the remote plasma source 107 in a gaseous state. The gases then flow through the first conduit 205 to the mixing block 210. The first conduit 205 can be an output conduit of the remote plasma source 107. The mixing block 210 is also coupled to the fluorine-containing gas source 124, where the fluorine-containing gas is mixed in the mixing block and processing volume 111 through the conduit 215 (shown virtually in FIG. 2A). Flows). The mixing block 210 can be coupled to an RF shielding device disposed on the topmost 200. Precursor gases and fluorine containing gases are then flowed into the gas distribution plate 114 to ignite the plasma.

As shown in FIG. 2B, the mixing block 210 may include a first conduit 205 as well as a second conduit 225 coupled to the feed line 130. An end of the second conduit 225 may include a flange 230. In one embodiment, flange 230 is perforated plate 235 with one or more angled holes formed therein for mixing gas from fluorine-containing gas source 124. It may include. In some embodiments, the longitudinal axis of the second conduit 225 is disposed at an angle perpendicular to the longitudinal axis of the first conduit 205. In some embodiments, feed line 127 includes a heater 240 to maintain the gaseous phase of liquids from secondary gas source 126 after vaporization in vaporizer 128.

3 is a schematic diagram of a portion of another embodiment of separate gas feed lines. The illustrated embodiment is similar to the embodiment of FIGS. 2A and 2B except that primary gas source 122 and secondary gas source 126 are coupled to gas block 300. Gas block 300 may mix both gases from primary gas source 122 and secondary gas source 126, the mixed gas being fed to remote plasma source 107 by feed line 127. Is provided. From this, the feed line 130 from the fluorine-containing gas source 124 is separated. Vaporizer 128 may be coupled to a first feed line 305 between secondary gas source 126 and vaporizer 128. A second feed line 310, which may be heated, may couple the vaporizer 128 to the gas block 300.

4A-4D are various views illustrating one embodiment of a perforated plate 235 for use with the flange 230 shown in FIG. 2B. 4A is an isometric view of perforated plate 235 and FIG. 4B is a top view of perforated plate 235. The perforated plate 235 includes a body 400 having a plurality of through holes 405A and 405B. Body 400 also includes a raised annular lip 410A on one side of groove 415. The other side of the groove 415 includes raised annular lips 410B.

4C is a side cross-sectional view of perforated plate 235 along line 4C-4C in FIG. 4B. A first recess 420A is defined in the body 400 within the inner circumference of the raised annular lip 410A. A second recess 420B is defined in the body 400 within the inner circumference of the raised annular lip 410B. In one embodiment, the height 425A of the first recess 420A is substantially the same as the height 425B of the second recess 420B (ie, +/− 0.001 inches). In some embodiments, the heights 425A, 425B of each of the first recess 420A and the second recess 420B are each about 5% greater than the thickness 430 of the body 400.

At least some of the through holes 405A and 405B are angled with respect to the longitudinal axis A of the body 400. In one embodiment, the through hole 405A disposed in the center of the body 400 is oriented along the longitudinal axis A, while the through hole 405B is angled. Angled through holes 405B may be used to provide swirl or vortex flow to facilitate mixing of precursor gases with fluorine-containing gas.

4D is a side cross-sectional view of the main body 400 along the 4D-4D line of FIG. 4B. The cross section of one of the through holes 405B is shown oriented at an angle α with respect to the longitudinal axis A of the body 400. The angle α may be about 40 ° to about 50 °, such as about 45 °, relative to the longitudinal axis A. Although only one through hole 405B is shown, all of the through holes 405B may be angled at an angle α. The through holes 405B may be angled inwards toward the longitudinal axis A, towards each other, or in combinations of them.

According to embodiments of the plasma processing system 100 described in the present invention, the primary gas source 122, the secondary gas source 126, and the fluorine-containing gas source 124 form an OLED structure. It can be used to. The OLED structure may include a first barrier layer and a second barrier layer formed on the substrate 101. The first barrier layer may be a dielectric layer, such as silicon nitride (SiN), silicon oxynitride (SiON), silicon dioxide (SiO 2 ), aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), or other suitable dielectric layers. Can be. The first barrier layer may be deposited by introducing a silicon containing precursor, such as silane, with hydrogen and with one or more nitrogen containing precursors, such as N 2 and NH 3 .

A buffer adhesive layer may be formed on an area of the first barrier layer that is exposed using a mask. The buffer adhesive layer may comprise a dielectric material, such as silicon oxynitride.

A second buffer layer may be deposited on the buffer adhesive layer. The second buffer layer can be fluorinated plasma-polymerized hexamethyldisiloxane (pp-HMDSO: F). Deposition of the pp-HMDSO: F layer is accomplished by flowing one or more fluorine-containing gases from the HMDSO gas and the fluorine-containing gas source 124 together with the O 2 , He or N 2 O gas. The fluorine-containing gas may be nitrogen trifluoride (NF 3 ), SiF 4 , fluorine gas (F 2 ), fluorinated carbons (C X F Y ), or any combination thereof.

The fluorine doped plasma-polymerized HMDSO layer has better particle coverage performance and surface planarization effects. Testing results using the fluorine-containing gas source 124 coupled to a separate conduit 134 result in the flow of gases from the primary gas source 122 and the secondary gas source 126 and the fluorine-containing gases. In contrast to the above, the resulting film showed a reduction of more than about 90% of the particles.

Existing plasma processing systems may be retrofitted to include a conduit 134 and a fluorine-containing gas source 124 by modifying the gas panel of the system. For example, in addition to the injection valve, a new spool for the fluorine-containing gas source 124 may be added. Pressure switches, such as 500 Torr or 550 Torr switches, may also be added to the gas panel and / or feed line.

The use of separate gas feed lines as discussed above prevents premature reactions between precursor gases and fluorine-containing gases. Hasty reactions produce particles, which can create defects in films formed on a substrate and / or reduce yield. The embodiments disclosed in the present invention are demonstrated to reduce particles by about 90% or more.

While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure, the scope of which is set forth in the claims below. Is determined by

Claims (15)

As a plasma processing chamber:
A first precursor source and a second precursor source, coupled by a first feed line and a second feed line, to a remote plasma source disposed on the chamber, wherein one of the first precursor source and the second precursor source is Hexamethyldisiloxane fluid; And
A third precursor source comprising a fluorine-containing gas, coupled to an output conduit extending between the remote plasma source and the chamber by a third feed line separated from the first feed line and the second feed line Including;
The output conduit includes a first conduit of a mixing block, the mixing block including a second conduit coupled to the mixing block, the second conduit including a flange coupled to the third feed line.
Plasma processing chamber. The method of claim 1,
One of the first feed line and the second feed line comprises a vaporizer
Plasma processing chamber. The method of claim 1,
One of the first feed line and the second feed line includes a heater
Plasma processing chamber. delete delete delete The method of claim 1,
The flange includes a perforated plate
Plasma processing chamber. The method of claim 7, wherein
The perforated plate includes a plurality of through holes, wherein at least some of the through holes are angled with respect to the longitudinal axis of the perforated plate.
Plasma processing chamber. The method of claim 8,
Some of the through holes are angled at 40 degrees to 50 degrees with respect to the longitudinal axis.
Plasma processing chamber. The method of claim 1,
The first feed line and the second feed line are coupled to a mixing block disposed between the remote plasma source and the first precursor source and the second precursor source.
Plasma processing chamber. As a plasma processing chamber:
A first precursor source and a second precursor source, coupled by a first feed conduit and a second feed conduit, to a remote plasma source disposed on the chamber, wherein one of the first precursor source and the second precursor source is Hexamethyldisiloxane fluid;
A vaporizer coupled to a feed conduit coupled to a precursor source comprising the hexamethyldisiloxane fluid; And
A third precursor source comprising a fluorine-containing gas, coupled to an output conduit extending between the remote plasma source and the chamber by a third feed conduit separated from the first feed conduit and the second feed conduit Including;
The output conduit comprises a first conduit of a mixing block, the mixing block comprising a second conduit coupled to the mixing block, the second conduit comprising a flange coupled to the third feed conduit
Plasma processing chamber. The method of claim 11,
The first feed conduit and the second feed conduit are coupled to a mixing block disposed between the remote plasma source and the first precursor source and the second precursor source.
Plasma processing chamber. delete delete The method of claim 11,
The flange includes a perforated plate
Plasma processing chamber.
KR2020150003835U 2014-06-20 2015-06-12 Plasma process chamber with separated gas feed lines KR200490445Y1 (en)

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US10522371B2 (en) * 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10934620B2 (en) * 2016-11-29 2021-03-02 Applied Materials, Inc. Integration of dual remote plasmas sources for flowable CVD
CN111755625A (en) * 2020-06-24 2020-10-09 武汉华星光电半导体显示技术有限公司 Display panel and preparation method thereof

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JP2007184578A (en) * 2005-12-29 2007-07-19 Qimonda Ag Atomic layer deposition process

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US8927066B2 (en) * 2011-04-29 2015-01-06 Applied Materials, Inc. Method and apparatus for gas delivery

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