KR200490445Y1 - Plasma process chamber with separated gas feed lines - Google Patents
Plasma process chamber with separated gas feed lines Download PDFInfo
- Publication number
- KR200490445Y1 KR200490445Y1 KR2020150003835U KR20150003835U KR200490445Y1 KR 200490445 Y1 KR200490445 Y1 KR 200490445Y1 KR 2020150003835 U KR2020150003835 U KR 2020150003835U KR 20150003835 U KR20150003835 U KR 20150003835U KR 200490445 Y1 KR200490445 Y1 KR 200490445Y1
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- South Korea
- Prior art keywords
- conduit
- source
- feed line
- coupled
- plasma processing
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45514—Mixing in close vicinity to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Vapour Deposition (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
Abstract
A method and apparatus for separately providing precursor gases to a plasma processing system is coupled by a first feed line and a second feed line to a remote plasma source disposed on a chamber, the first precursor source and the second precursor source. ; And a third precursor source comprising a fluorine containing gas coupled by a third feed line separated from the first feed line and the second feed line to an output conduit extending between the remote plasma source and the chamber.
Description
Embodiments disclosed herein generally relate to a method and apparatus for processing substrates such as solar panel substrates, flat panel substrates, or semiconductor substrates using plasma.
[0002] Plasma enhanced chemical vapor deposition (PECVD) is employed to deposit thin films on substrates such as semiconductor substrates, solar panel substrates, liquid crystal display (LCD) substrates, and organic light emitting diode (OLED) displays. Generally used. PECVD is generally accomplished by introducing a precursor gas into a vacuum chamber having a substrate disposed on a substrate support. The vacuum chamber may be coupled to a remote plasma chamber located outside of the vacuum chamber that energizes (eg, excites) the cleaning gases with plasma cleaning gases before entering the vacuum chamber. A portion of the precursor gas is typically directed through the remote plasma chamber so that it can be introduced into a gaseous state into the vacuum chamber. The precursor gas is then flowed to a distribution plate placed near the top of the vacuum chamber. The precursor gas may be energized in a vacuum chamber by applying radio frequency (RF) power to the chamber from one or more RF sources coupled to the chamber. The excited gases react to form a layer of material on the surface of the substrate located on the temperature controlled substrate support. The distribution plate is generally connected to an RF power source and the substrate support is typically connected to the chamber body to provide an RF current return path.
However, some of the precursor gases used to form the layer may be reactive with other precursor gases before reaching the substrate. Reactions between these gases tend to form particles on the substrate, which is undesirable. Therefore, there is a need for a PECVD chamber with gas feed lines that prevents mixing of precursor gases prior to deposition.
Embodiments disclosed in the present invention generally relate to a method and apparatus for plasma processing a substrate. More specifically, embodiments disclosed in the present invention provide a plasma processing chamber having separate gas feed lines.
In one embodiment, a plasma processing chamber is provided. The chamber includes a first precursor source and a second precursor source, coupled by a first feed line and a second feed line, to a remote plasma source disposed on the chamber; And a third precursor source comprising a fluorine-containing gas, coupled to an output conduit extending between the chamber and the remote plasma source, by a third feed line separated from the first feed line and the second feed line. .
In another embodiment, a plasma processing system is described. The plasma processing system includes a chamber; A first electrode disposed in the chamber, the first electrode facilitating generation of a plasma in the chamber and movable relative to a second electrode in the chamber; A first precursor source and a second precursor source, coupled by a first feed line and a second feed line, to a remote plasma source disposed on the chamber; And a third precursor source comprising a fluorine-containing gas, coupled to an output conduit extending between the chamber and the remote plasma source by a third feed line separated from the first feed line and the second feed line.
[0007] A more specific description of the embodiments disclosed in the present invention, briefly summarized above in a way that the above-listed features of the present disclosure can be understood in detail, may be made with reference to embodiments, some of which are It is shown in the accompanying drawings. It should be noted, however, that the appended drawings illustrate only typical embodiments of the present disclosure and should not be regarded as limiting the scope of the present disclosure, since the present disclosure may allow for other equally effective embodiments. to be.
1 is a schematic cross-sectional view of one embodiment of a plasma processing system.
2A and 2B are schematic views of a portion of a chamber body, showing, in front and plan view, respectively, an embodiment of a coupling of a processing chamber and feed lines and separate gas feed lines.
3 is a schematic diagram of a portion of another embodiment of separate gas feed lines.
4A-4D are various views illustrating one embodiment of a perforated plate for use with the flange shown in FIG. 2B.
To facilitate understanding, the same reference numbers have been used where possible to indicate the same elements common to the figures. It is contemplated that elements and / or process steps of one embodiment may be beneficially included in other embodiments without further explanation.
Embodiments disclosed in the present invention generally relate to a method and apparatus for plasma processing a substrate. More specifically, embodiments disclosed in the present invention provide a plasma processing chamber having separate gas feed lines. Embodiments described in the present invention relate to methods of depositing materials on a substrate by enhancing plasma formation and providing reduction of particles in the deposited materials. In the description that follows, reference will be made to a PECVD chamber, but embodiments of the present invention, to name just a few, include physical vapor deposition (PVD) chambers, etching chambers, semiconductor processing chambers, solar cell processing chambers, and It should be understood that it can also be implemented in other chambers, including organic light emitting display (OLED) processing chambers. Suitable chambers that can be used are available from AKT America, Inc., a subsidiary of Applied Materials, Inc. of Santa Clara, California. It should be understood that the embodiments discussed in the present invention may also be practiced in chambers available from other manufacturers.
Embodiments of the present disclosure are generally used when processing rectangular substrates, such as substrates for liquid crystal displays or flat panels and substrates for solar panels. Other suitable substrates may be circular, such as semiconductor substrates. Chambers used to process substrates typically include a substrate transfer port formed on the sidewall of the chamber for transfer of the substrate. Embodiments disclosed in the present invention can be used to process substrates of any size or shape. However, embodiments disclosed in the present invention provide particular advantages for substrates having a plan surface area of about 15,600 cm 2, including substrates having a planar surface area of about 90,000 cm 2 surface area (or more).
1 is a schematic cross-sectional view of one embodiment of a
[0016] The
As shown in FIG. 1, a
The
In one embodiment, the
In one embodiment, the
In one embodiment, the
The
2A and 2B show part of a
As shown in FIG. 2B, the mixing
3 is a schematic diagram of a portion of another embodiment of separate gas feed lines. The illustrated embodiment is similar to the embodiment of FIGS. 2A and 2B except that
4A-4D are various views illustrating one embodiment of a
4C is a side cross-sectional view of
At least some of the through
4D is a side cross-sectional view of the
According to embodiments of the
A buffer adhesive layer may be formed on an area of the first barrier layer that is exposed using a mask. The buffer adhesive layer may comprise a dielectric material, such as silicon oxynitride.
A second buffer layer may be deposited on the buffer adhesive layer. The second buffer layer can be fluorinated plasma-polymerized hexamethyldisiloxane (pp-HMDSO: F). Deposition of the pp-HMDSO: F layer is accomplished by flowing one or more fluorine-containing gases from the HMDSO gas and the fluorine-containing
The fluorine doped plasma-polymerized HMDSO layer has better particle coverage performance and surface planarization effects. Testing results using the fluorine-containing
Existing plasma processing systems may be retrofitted to include a
The use of separate gas feed lines as discussed above prevents premature reactions between precursor gases and fluorine-containing gases. Hasty reactions produce particles, which can create defects in films formed on a substrate and / or reduce yield. The embodiments disclosed in the present invention are demonstrated to reduce particles by about 90% or more.
While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure, the scope of which is set forth in the claims below. Is determined by
Claims (15)
A first precursor source and a second precursor source, coupled by a first feed line and a second feed line, to a remote plasma source disposed on the chamber, wherein one of the first precursor source and the second precursor source is Hexamethyldisiloxane fluid; And
A third precursor source comprising a fluorine-containing gas, coupled to an output conduit extending between the remote plasma source and the chamber by a third feed line separated from the first feed line and the second feed line Including;
The output conduit includes a first conduit of a mixing block, the mixing block including a second conduit coupled to the mixing block, the second conduit including a flange coupled to the third feed line.
Plasma processing chamber.
One of the first feed line and the second feed line comprises a vaporizer
Plasma processing chamber.
One of the first feed line and the second feed line includes a heater
Plasma processing chamber.
The flange includes a perforated plate
Plasma processing chamber.
The perforated plate includes a plurality of through holes, wherein at least some of the through holes are angled with respect to the longitudinal axis of the perforated plate.
Plasma processing chamber.
Some of the through holes are angled at 40 degrees to 50 degrees with respect to the longitudinal axis.
Plasma processing chamber.
The first feed line and the second feed line are coupled to a mixing block disposed between the remote plasma source and the first precursor source and the second precursor source.
Plasma processing chamber.
A first precursor source and a second precursor source, coupled by a first feed conduit and a second feed conduit, to a remote plasma source disposed on the chamber, wherein one of the first precursor source and the second precursor source is Hexamethyldisiloxane fluid;
A vaporizer coupled to a feed conduit coupled to a precursor source comprising the hexamethyldisiloxane fluid; And
A third precursor source comprising a fluorine-containing gas, coupled to an output conduit extending between the remote plasma source and the chamber by a third feed conduit separated from the first feed conduit and the second feed conduit Including;
The output conduit comprises a first conduit of a mixing block, the mixing block comprising a second conduit coupled to the mixing block, the second conduit comprising a flange coupled to the third feed conduit
Plasma processing chamber.
The first feed conduit and the second feed conduit are coupled to a mixing block disposed between the remote plasma source and the first precursor source and the second precursor source.
Plasma processing chamber.
The flange includes a perforated plate
Plasma processing chamber.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201462015362P | 2014-06-20 | 2014-06-20 | |
US62/015,362 | 2014-06-20 |
Publications (2)
Publication Number | Publication Date |
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KR20150004651U KR20150004651U (en) | 2015-12-30 |
KR200490445Y1 true KR200490445Y1 (en) | 2019-11-12 |
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KR2020150003835U KR200490445Y1 (en) | 2014-06-20 | 2015-06-12 | Plasma process chamber with separated gas feed lines |
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KR (1) | KR200490445Y1 (en) |
CN (1) | CN204857653U (en) |
TW (1) | TWM512027U (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US10522371B2 (en) * | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10934620B2 (en) * | 2016-11-29 | 2021-03-02 | Applied Materials, Inc. | Integration of dual remote plasmas sources for flowable CVD |
CN111755625A (en) * | 2020-06-24 | 2020-10-09 | 武汉华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2007184578A (en) * | 2005-12-29 | 2007-07-19 | Qimonda Ag | Atomic layer deposition process |
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KR101071544B1 (en) * | 2009-01-12 | 2011-10-10 | 주식회사 메카로닉스 | Method for fabricating cigs thin layer by ald |
US8927066B2 (en) * | 2011-04-29 | 2015-01-06 | Applied Materials, Inc. | Method and apparatus for gas delivery |
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2015
- 2015-05-26 CN CN201520346288.8U patent/CN204857653U/en active Active
- 2015-06-12 KR KR2020150003835U patent/KR200490445Y1/en active IP Right Grant
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JP2007184578A (en) * | 2005-12-29 | 2007-07-19 | Qimonda Ag | Atomic layer deposition process |
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TWM512027U (en) | 2015-11-11 |
CN204857653U (en) | 2015-12-09 |
KR20150004651U (en) | 2015-12-30 |
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