KR20040108436A - A liquid crystal display and the fabricating method - Google Patents

Abstract

PURPOSE: A liquid crystal display device, and a method for manufacturing the same are provided to improve the adhesive power by patterning a metal layer in predetermined shape to prevent the metal layer from getting loose. CONSTITUTION: A metal film deposited on a transparent insulating substrate(301) is patterned. Gate lines and gate electrodes(302) are formed in the center part of the patterned metal film, having predetermined patterns. A gate insulating layer(303), an active layer(304), an ohmic contact layer(305), source and drain electrodes(306a,306b), and data bus lines(307) are sequentially formed on the substrate. A passivation film(308) is formed on the substrate including the gate insulating layer, the active layer, the ohmic contact layer, the source and drain electrodes, and the data bus lines. ITO(Indium Tin Oxide) pixel electrodes(309) are formed on the passivation film.

Description

Liquid crystal display and its manufacturing method {A LIQUID CRYSTAL DISPLAY AND THE FABRICATING METHOD}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device and a method for manufacturing the same, and more particularly, to a liquid crystal display device and a method for manufacturing the same, in which a metal layer is formed into a predetermined form in order to prevent lifting of the metal layer formed between the insulating layers. It is about.

Recently, with the rapid development of the information society, there is a need for a flat panel display having excellent characteristics such as thinning, light weight, and low power consumption. It is excellent and is actively applied to notebooks and desktop monitors.

In general, a liquid crystal display device is formed by arranging two substrates on which electric field generating electrodes are formed so that the surfaces on which two electrodes are formed face each other, injecting a liquid crystal material between the two substrates, and then applying voltage to the two electrodes. By moving the liquid crystal molecules by an electric field, the device expresses an image by the transmittance of light that varies accordingly.

Hereinafter, a structure of a general liquid crystal display device will be described with reference to the accompanying drawings.

1 is a diagram schematically illustrating a structure of a general liquid crystal display. As shown in the drawing, in the liquid crystal display device, the first substrate 110 and the second substrate 120 are disposed at predetermined intervals. The thin film transistor T1 including the gate electrode 111 and the source and drain electrodes 115a and 115b is formed on the lower first substrate 110, and the thin film transistor T1 is in contact with the active layer 113 and the ohmic contact. Further comprises layer 114. Here, the gate insulating layer 112 is formed on the gate electrode 111.

Subsequently, a protective layer 116 is formed on the thin film transistor T1 to cover the thin film transistor T1, and the protective layer 116 has a contact hole 116c exposing the drain electrode 115b. Next, a pixel electrode 117 is formed on the passivation layer 116 and is connected to the drain electrode 115b through the contact hole 116c.

On the other hand, a black matrix 121 is formed on the inner surface of the second substrate 120 at a position corresponding to the thin film transistor T1, and red (R), green (G), and blue (B) Color filters 122a and 122b are formed in which colors are sequentially repeated, and a common electrode 123 made of a transparent conductive material is formed below. Here, one color of the color filters 122a and 122b corresponds to one pixel electrode 117.

Next, the liquid crystal layer 130 is injected between the pixel electrode 117 and the common electrode 123, and a voltage is applied to the pixel electrode 117 and the common electrode 123 of the liquid crystal molecules of the liquid crystal layer 130. At this time, the arrangement state is changed by the electric field generated between the two electrodes 117 and 123. Although not illustrated, an alignment layer is formed on the pixel electrode 117 and the common electrode 123, respectively, to determine the initial arrangement state of the liquid crystal molecules.

Next, the first and the second substrates 110 and 120, that is, the first substrate 110 and the upper portion of the second substrate 120, pass only light in a direction parallel to the light transmission axis, and convert the natural light into linearly polarized light. Second polarizing plates 118 and 124 are disposed. Here, the light transmission axis of the first polarizing plate 118 forms 90 degrees with the light transmission axis of the second polarizing plate 124.

As illustrated in FIG. 1, the structure in which the thin film transistor and the pixel electrode are formed on the lower substrate of the liquid crystal display and the color filter and the common electrode are formed on the upper substrate has been described. The structure which formed the color filter is shown.

2A to 2D are diagrams showing a procedure for the manufacturing method of the first substrate (thin film transistor substrate) according to the related art. As shown in the drawing, first, a gate electrode 202 is formed on the transparent substrate 201, and the gate insulating layer 203 is grown on the gate electrode 202 by plasma enhanced chemical vapor deposition (PECVD).

Next, an amorphous silicon layer doped with amorphous silicon and phosphorus is patterned by a photolithography process after deposition to form an active layer 204 and an ohmic contact layer 205.

A pattern of the source / drain electrodes 206a and 206b and the data line 207 is formed on the amorphous silicon layer and then etched using a mask to etch the source / drain electrodes 206a and 206b and the data line ( 207 is formed.

Thereafter, a passivation layer 208 is formed using an inorganic layer, and a pixel electrode 209 is formed of indium titan oxide (ITO) on the passivation layer 208.

However, after forming the gate electrode and the gate line by patterning the metal film on the substrate as described above, the gate electrode and the gate line patterned with the metal film between the substrate and the gate insulating film are generated in the structure where the gate insulating film is formed. .

In the structure of forming a source / drain electrode and a data line by patterning a metal film on the gate insulating film, and then forming a passivation film, adhesion between the source / drain electrode and the data line, which is a metal film, is formed between the gate insulating film and the passivation film. It does not go well, the lifting occurs, a problem occurs that a defective rate occurs.

SUMMARY OF THE INVENTION An object of the present invention is to provide a liquid crystal display device having a pattern of a metal layer capable of improving adhesion by patterning the metal layer in a predetermined form in order to prevent lifting of the metal layer formed between the insulating layers, and a method of manufacturing the same. .

1 is a view schematically showing a structure of a general liquid crystal display device.

2A to 2D are diagrams showing a procedure for a conventional method for manufacturing a first substrate (thin film transistor substrate).

3 is a view schematically showing the structure of a first embodiment of a liquid crystal display according to the present invention;

4A to 4D are diagrams showing the procedure for the manufacturing method of the first embodiment of the liquid crystal display according to the present invention;

5 is a view showing a predetermined pattern formed on the gate electrode and the gate line according to the present invention.

6 is a view schematically showing the structure of a second embodiment of a liquid crystal display according to the present invention;

7A to 7D illustrate a manufacturing method of a second embodiment of a liquid crystal display according to the present invention.

8 is a view showing a predetermined pattern formed on the source / drain electrodes and data lines according to the present invention.

9 is a view showing a third embodiment of a liquid crystal display device according to the present invention;

<Description of the symbols for the main parts of the drawings>

301, 601 --- substrate 302, 602 --- gate electrode

303, 603 --- gate insulating film 304, 604 --- active layer

305, 605 --- ohmic contact layer 309, 609 --- pixel electrode

307, 607 --- Data lines 308, 608 --- Shield

306a, 306b, 606a, 606b --- source / drain electrodes

In order to achieve the above object, the liquid crystal display device according to the present invention,

A gate line and a gate electrode having a patterned metal film deposited on the transparent insulating substrate and having a predetermined pattern in a central portion of the patterned metal film;

A gate insulating film, an active layer, an ohmic contact layer, a source / drain electrode, and a data bus line sequentially formed on the substrate on which the gate line and the gate electrode are formed;

A protective film coated on the resultant to protect the device;

It is characterized in that it includes an ITO pixel electrode formed on the protective film.

In addition, the liquid crystal display device according to the present invention in order to achieve the above object,

A gate line and a gate electrode having a patterned metal film deposited on the transparent insulating substrate and having a predetermined pattern in a central portion of the patterned metal film;

A gate insulating film and a metal film sequentially formed on the substrate on which the gate line and the gate electrode are formed;

A source / drain electrode and a data line patterned with a metal film deposited on the gate insulating film, and having a predetermined pattern at a central portion of the patterned metal film;

A protective film coated on the resultant to protect the device;

It is characterized in that it includes an ITO pixel electrode formed on the protective film.

Here, in particular, the metal film formed of the gate line and the gate electrode having a predetermined pattern in the central portion of the patterned metal film may be aluminum (Al), chromium (Cr), tungsten (W), molybdenum (Mo), antimony (Sb), It is characterized in that it is formed of one selected from the group consisting of tantalum Ta and an aluminum alloy.

In particular, the metal film of the source / drain electrode and the data line having a predetermined pattern in the central portion of the patterned metal film may be aluminum (Al), chromium (Cr), tungsten (W), molybdenum (Mo), or antimony (Sb). , Characterized in that it is formed of one selected from the group of conductive metals composed of tantalum (Ta) and an aluminum alloy.

In addition, the liquid crystal display device according to the present invention in order to achieve the above object,

In a liquid crystal display device in which a lower layer and an upper layer are made of an insulating material, and a metal film is patterned between the lower layer and the upper layer, the metal film patterned and formed between the lower layer and the upper layer has a predetermined pattern in a central portion and is formed between the lower layer and the upper layer. The feature is that the adhesion of the metal film is enhanced.

In particular, the metal layer may be formed of one selected from a group of conductive metals including aluminum (Al), chromium (Cr), tungsten (W), molybdenum (Mo), antimony (Sb), tantalum (Ta), and an aluminum alloy. Has its features.

In addition, the manufacturing method of the liquid crystal display device according to the present invention in order to achieve the above object,

Forming a pattern on a center portion of the gate line and the gate electrode while forming a gate line and a gate electrode by coating a metal film on the transparent insulating substrate;

Sequentially forming a gate insulating film, an active layer, an ohmic contact layer, a source / drain electrode, and a data line on the substrate on which the gate line and the gate electrode are formed;

Applying a protective film for protecting the device on the resultant material;

Forming a polarizing film on the protective film;

It is characterized in that it comprises the step of forming an ITO pixel electrode on the polarizing film.

In addition, the manufacturing method of the liquid crystal display device according to the present invention in order to achieve the above object,

Depositing a metal film on the transparent insulating substrate to form a gate line and a gate electrode, and forming a predetermined pattern on a center portion of the gate line and the gate electrode;

Sequentially forming a gate insulating layer, an active layer, and an ohmic contact layer on the substrate on which the gate line and the gate electrode are formed;

Depositing a metal film on the resultant to form a source / drain electrode and a data line, and forming a predetermined pattern on a center portion of the source / drain electrode and the data line;

Applying a protective film for protecting the device on the resultant material;

Forming a polarizing film on the protective film;

It is characterized in that it comprises the step of forming an ITO pixel electrode on the polarizing film.

Here, in particular, the metal film formed of the gate line and the gate electrode having a predetermined pattern in the central portion of the patterned metal film may be aluminum (Al), chromium (Cr), tungsten (W), molybdenum (Mo), antimony (Sb), It is characterized in that it is formed of a selected one of the conductive metal group consisting of tantalum (Ta) and aluminum alloy.

In particular, the metal film formed of a source / drain electrode and a data line having a predetermined pattern in a central portion of the patterned metal film may be aluminum (Al), chromium (Cr), tungsten (W), molybdenum (Mo), or antimony (Sb). ), It is characterized in that it is formed of a selected one of the conductive metal group consisting of tantalum (Ta) and aluminum alloy.

According to the present invention as described above, the adhesive force can be improved by patterning the metal layer in a predetermined form in order to prevent the lifting of the metal layer formed between the insulating layers.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

3 is a view schematically showing the structure of a first embodiment of a liquid crystal display according to the present invention. As shown in the drawing, in the structure of the first embodiment of the liquid crystal display according to the present invention, a metal film deposited on the transparent insulating substrate 301 is patterned, and a gate line having a predetermined pattern in a central portion of the patterned metal film. (Not shown) and gate electrode 302; The gate insulating layer 303, the active layer 304, the ohmic contact layer 305, the source / drain electrodes 306a and 306b and the data line 307 sequentially formed on the substrate on which the gate line and the gate electrode 302 are formed. )and; A protective film 308 coated on the resultant for device protection; And an ITO pixel electrode 309 formed on the passivation layer 308.

4A to 4D illustrate a procedure of a manufacturing method of a first embodiment of a liquid crystal display according to the present invention. As shown in FIG. 4A, a metal film is first deposited on the transparent substrate 301 to form a gate electrode 302 and a gate line (not shown).

In more detail, the metal layers of the gate electrode 302 and the gate line include aluminum (Al), chromium (Cr), tungsten (W), molybdenum (Mo), antimony (Sb), tantalum (Ta) and aluminum. It is formed as a selected one of the conductive metal group consisting of an alloy.

Here, the gate electrode 302 and the gate line are formed through the photolithography process using a mask, and a predetermined pattern is also formed on the center portion of the gate electrode 302 and the gate line.

In this case, the size of the pattern formed at the center of the gate electrode 302 and the gate line is formed in consideration of the formed gate electrode 302 and the gate line.

In addition, in order to perform the photo-lithography process, first, a photoresist is coated to form a photoresist layer.

Next, an exposure mask is placed on the photoresist layer and an exposure process of exposing a specific portion E to light is performed. After the exposed photoresist is developed, an etching process is performed on the patterned portion according to the positive or negative formula.

When the remaining photoresist layer is removed, only the gate electrode 302 and the gate line are exposed.

5 is a view showing a predetermined pattern formed on the gate electrode and the gate line according to the present invention. As shown in the figure, the gate electrode 302 formed on the substrate and the central portion of the gate line are formed with a predetermined pattern.

This is because the pattern portion between the gate electrode 302 and the metal film on which the gate line is formed is directly contacted between the substrate 301 and the gate insulating film 303 to be formed later to strengthen the adhesive force to lift the gate electrode and the gate line. You can prevent it.

Subsequently, as illustrated in FIG. 4B, a gate insulating layer 303 is grown on the substrate on which the gate electrode 301 and the gate line are formed by using plasma enhanced chemical vapor deposition (PECVD).

Next, an amorphous silicon layer doped with amorphous silicon and phosphorus is patterned by a photolithography process after deposition to form an active layer 304 and an ohmic contact layer 305.

Subsequently, as shown in FIG. 4C, a metal film is deposited on the amorphous silicon layer and then etched using a mask to form source / drain electrodes 306a and 306b and data lines 307. Done.

In this case, the method of patterning the source / drain electrodes 306a and 306b and the data line 307 is formed in the same manner as the gate electrode 302 and the gate line.

More specifically, the conductive material is one of a conductive metal group consisting of aluminum (Al), aluminum alloy, chromium (Cr), tungsten (W), molybdenum (Mo), antimony (Sb), tantalum (Ta). It is chosen and applied.

Finally, as shown in FIG. 4D, the passivation layer 308 is formed using an inorganic layer, and a pixel electrode 309 is formed on the passivation layer 308 with indium titan oxide (ITO).

6 is a diagram schematically illustrating a structure of a second embodiment of a liquid crystal display according to the present invention. As shown in FIG. 2, the structure of the second embodiment of the liquid crystal display includes a gate line (not shown) in which a metal film deposited on the transparent insulating substrate 601 is patterned and has a predetermined pattern in a central portion of the patterned metal film. And a gate electrode 602; A gate insulating film 603 sequentially formed on a substrate on which the gate line (not shown) and the gate electrode 602 are formed; An active layer 604, an ohmic contact layer 605, and a metal film sequentially formed on the gate insulating film 603; Source / drain electrodes (606a, 606b) and data lines (607) having a predetermined pattern in a central portion of the patterned metal film; A protective film 608 coated on the resultant for device protection; And an ITO pixel electrode 609 formed on the passivation layer 608.

7A to 7D illustrate a manufacturing method of a second embodiment of a liquid crystal display according to the present invention. As shown in FIG. 7A, a metal film is first deposited on the transparent substrate 601 to form a gate electrode 602 and a gate line (not shown).

In more detail, the metal layers of the gate electrode 602 and the gate line include aluminum (Al), chromium (Cr), tungsten (W), molybdenum (Mo), antimony (Sb), tantalum (Ta) and the like. It is formed as a selected one of the conductive metal group consisting of an aluminum alloy.

Here, the gate electrode 602 and the gate line are formed through the photolithography process using a mask, and a predetermined pattern is also formed on the center portion of the gate electrode 602 and the gate line.

In this case, the size of the pattern formed at the center of the gate electrode 602 and the gate line is formed in consideration of the formed gate electrode 602 and the gate line.

In addition, in order to perform the photo-lithography process, first, a photoresist is coated and then a photoresist layer is formed.

Next, an exposure mask is placed on the photoresist layer and an exposure process of exposing a specific portion E to light is performed. After the exposed photoresist is developed, an etching process is performed on the patterned portion according to the positive or negative formula.

When the remaining photoresist layer is removed, only the gate electrode 602 and the gate line are exposed.

Subsequently, as shown in FIG. 7B, the gate insulating layer 603 is grown on the substrate on which the gate electrode 602 and the gate line are formed using PECVD (Plasma Enhanced Chemical Vapor Deposition).

Next, an amorphous silicon layer doped with amorphous silicon and phosphorus is patterned by photolithography after deposition to form an active layer 604 and an ohmic contact layer 605.

Subsequently, as shown in FIG. 7C, a metal film is deposited on the amorphous silicon layer and then etched using a mask to form source / drain electrodes 606a and 606b and data lines 607. Done.

In this case, the method of patterning the source / drain electrodes 606a and 606b and the data line 607 may be formed in the same manner as the gate electrode 602 and the gate line.

8 is a view illustrating a predetermined pattern formed on the source / drain electrodes and the data line according to the present invention. As shown in the drawing, the source / drain electrodes 606a and 606b formed on the ohmic contact layer 604 and the data line 607 formed on the gate insulating film 603 have a predetermined pattern in a central portion thereof. . This can prevent the lifting of the patterned metal film by strengthening the adhesive force between the protective film 608 to be formed later on the patterned metal film as described above.

More specifically, the conductive material is one of a conductive metal group consisting of aluminum (Al), aluminum alloy, chromium (Cr), tungsten (W), molybdenum (Mo), antimony (Sb), tantalum (Ta). It is chosen and applied.

Finally, as shown in FIG. 7D, the passivation layer 608 is formed using an inorganic layer, and a pixel electrode 609 is formed on the passivation layer 608 with indium titan oxide (ITO).

9 illustrates a third embodiment of a liquid crystal display according to the present invention. As shown therein, the lower layer 901 and the upper layer 903 are made of an insulating material, and the metal film 902 formed by patterning between the lower layer 901 and the upper layer 903 has a predetermined pattern in the center portion. The lower layer 901 and the upper layer 903 are in direct contact to enhance the adhesion of the metal layer 902.

Although the present invention has been described with reference to the embodiments illustrated in the drawings, this is merely exemplary, and it will be understood by those skilled in the art that various modifications and equivalent other embodiments are possible. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims.

As described above, the liquid crystal display device and the method of manufacturing the same according to the present invention can improve adhesion by patterning the metal layer in a predetermined form in order to prevent lifting of the metal layer formed between the insulating layers.

Claims (10)

A gate line and a gate electrode having a patterned metal film deposited on the transparent insulating substrate and having a predetermined pattern in a central portion of the patterned metal film; A gate insulating film, an active layer, an ohmic contact layer, a source / drain electrode, and a data bus line sequentially formed on the substrate on which the gate line and the gate electrode are formed; A protective film coated on the resultant to protect the device; And an ITO pixel electrode formed on the passivation layer. A gate line and a gate electrode having a patterned metal film deposited on the transparent insulating substrate and having a predetermined pattern in a central portion of the patterned metal film; A gate insulating film and a metal film sequentially formed on the substrate on which the gate line and the gate electrode are formed; A source / drain electrode and a data line patterned with a metal film deposited on the gate insulating film, and having a predetermined pattern at a central portion of the patterned metal film; A protective film coated on the resultant to protect the device; And an ITO pixel electrode formed on the passivation layer. The method according to claim 1 or 2, The metal film formed of a gate line and a gate electrode having a predetermined pattern in a central portion of the patterned metal film may include aluminum (Al), chromium (Cr), tungsten (W), molybdenum (Mo), antimony (Sb), and tantalum (Ta). ) And a conductive metal group consisting of an aluminum alloy. The method of claim 2, The metal film of the source / drain electrode and the data line having a predetermined pattern in the central portion of the patterned metal film may be aluminum (Al), chromium (Cr), tungsten (W), molybdenum (Mo), antimony (Sb), or tantalum (Ta). ) And a conductive metal group consisting of an aluminum alloy. In a liquid crystal display device in which a lower layer and an upper layer are made of an insulating material, and a metal layer is patterned between the lower layer and the upper layer, the metal layer formed by patterning between the lower layer and the upper layer has a predetermined pattern in a central portion thereof, so that the lower layer and the upper layer are formed. Liquid crystal display device characterized in that the direct contact to strengthen the adhesion of the metal film. The method of claim 5, The metal film is formed of one selected from the group consisting of a conductive metal group consisting of aluminum (Al), chromium (Cr), tungsten (W), molybdenum (Mo), antimony (Sb), tantalum (Ta) and an aluminum alloy. LCD display device. Forming a pattern on a center portion of the gate line and the gate electrode while forming a gate line and a gate electrode by coating a metal film on the transparent insulating substrate; Sequentially forming a gate insulating film, an active layer, an ohmic contact layer, a source / drain electrode, and a data line on the substrate on which the gate line and the gate electrode are formed; Applying a protective film for protecting the device on the resultant material; And forming an ITO pixel electrode on the passivation layer. Depositing a metal film on the transparent insulating substrate to form a gate line and a gate electrode, and forming a predetermined pattern on a center portion of the gate line and the gate electrode; Sequentially forming a gate insulating layer, an active layer, and an ohmic contact layer on the substrate on which the gate line and the gate electrode are formed; Depositing a metal film on the resultant to form a source / drain electrode and a data line, and forming a predetermined pattern on a center portion of the source / drain electrode and the data line; Applying a protective film for protecting the device on the resultant material; And forming an ITO pixel electrode on the passivation layer. The method according to claim 7 or 8, The metal film formed of a gate line and a gate electrode having a predetermined pattern in a central portion of the patterned metal film may include aluminum (Al), chromium (Cr), tungsten (W), molybdenum (Mo), antimony (Sb), and tantalum (Ta). And a conductive metal group composed of aluminum alloy). The method of claim 8, A metal film formed of a source / drain electrode and a data line having a predetermined pattern in a central portion of the patterned metal film may include aluminum (Al), chromium (Cr), tungsten (W), molybdenum (Mo), antimony (Sb), and tantalum. And a conductive metal group consisting of Ta and aluminum alloy.