KR20040102633A - Plasma Processing System - Google Patents

Plasma Processing System Download PDF

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Publication number
KR20040102633A
KR20040102633A KR1020030034156A KR20030034156A KR20040102633A KR 20040102633 A KR20040102633 A KR 20040102633A KR 1020030034156 A KR1020030034156 A KR 1020030034156A KR 20030034156 A KR20030034156 A KR 20030034156A KR 20040102633 A KR20040102633 A KR 20040102633A
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South Korea
Prior art keywords
clamp ring
wafer
chamber
lower electrode
plasma
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KR1020030034156A
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Korean (ko)
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박상원
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삼성전자주식회사
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Priority to KR1020030034156A priority Critical patent/KR20040102633A/en
Publication of KR20040102633A publication Critical patent/KR20040102633A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: A plasma treatment apparatus is provided to extend life time of a clamp ring by making the clamp ring of SiC. CONSTITUTION: A plasma treatment apparatus comprises a processing chamber(1) for performing a plasma treatment, an upper electrode(3) installed in the upper portion of the chamber, a lower electrode(7) installed in the lower portion of the chamber, and a clamp ring(14). A wafer is loaded on the upper lower electrode(7) and fixed by the clamp ring. The clamp ring is made of SiC having characteristics of high strength, corrosion resistance, oxidation resistance, thermal resistance and shock resistance. Thereby the life time of the clamp ring is extended.

Description

플라즈마 처리장치{Plasma Processing System}Plasma Processing System

본 발명은 플라즈마 처리장치에 관한 것으로서, 더욱 상세하게는 웨이퍼의 에지부를 고정하는 클램프링의 재질을 개선한 플라즈마 처리장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus, and more particularly, to a plasma processing apparatus in which a material of a clamp ring for fixing an edge portion of a wafer is improved.

일반적으로 반도체소자는 실리콘 웨이퍼상에 제조공정을 반복적으로 진행하여 완성되며, 반도체 제조공정은 확산공정, 식각공정, 포토리소그래피공정 및 성막공정 등으로 나눌 수 있다.Generally, a semiconductor device is completed by repeatedly performing a manufacturing process on a silicon wafer, and the semiconductor manufacturing process may be divided into a diffusion process, an etching process, a photolithography process, and a film forming process.

이러한 공정 중 식각공정은 크게 습식식각과 건식식각으로 나눌 수 있으며, 습식식각은 소자의 최소선폭이 수백 내지 수십 마이크로대의 LSI 시대에 범용으로 적용되었으나 VLSI, ULSI소자에는 등방성 식각이 보이는 집적도의 한계 때문에 거의 사용되지 않고 있다. 따라서 현재 일반적으로 건식식각을 사용하고 있으며, 건식식각 설비 중 플라즈마를 이용하여 웨이퍼를 초 미세 가공하는 공정설비는 공정쳄버에서 가스와 고주파 파워 등 각종 요소를 이용하여 공정을 진행할 때 외부와 완전히 차단된 초고진공을 요구하고 있다.Among these processes, the etching process can be largely divided into wet etching and dry etching, and wet etching has been widely applied in the LSI era in which the minimum line width of the device is in the range of several hundreds to several tens of micrometers. Rarely used. Therefore, currently, in general, dry etching is used, and the process equipment for processing ultra-fine wafers using plasma among dry etching facilities is completely cut off from the outside when the process is performed using various elements such as gas and high frequency power in the process chamber. Ultra high vacuum is required.

이러한 공정챔버에서 가스와 고주파 파워 등을 이용하여 식각 공정을 수행하는 반도체장치 제조설비에는 고주파 파워를 이용하여 공급되는 공정가스를 플라즈마 상태로 변환시켜 웨이퍼 상의 상면 또는 패턴 마스크로부터 노출되는 부위에서 반응토록 하여 공정을 수행하는 것이 있다.In a semiconductor device manufacturing facility which performs an etching process using gas and high frequency power in such a process chamber, the process gas supplied by using high frequency power is converted into a plasma state so as to react at a portion exposed from an upper surface or a pattern mask on a wafer. To carry out the process.

이러한 플라즈마를 이용한 식각공정은 고주파파워가 인가되는 상하·부전극사이에 위치되는 웨이퍼에 대하여 공급되어 플라즈마상태로 변환되는 공정가스로 하여금 반응토록 함으로써 이루어진다. 여기서, 상술한 플라즈마 영역에 의한 반응은 웨이퍼의 상면 전역에서 균일하게 이루어지도록 함이 요구된다.The etching process using the plasma is performed by causing a process gas supplied to a wafer positioned between the upper and lower electrodes and the lower electrode to which high frequency power is applied and converted into a plasma state to react. Here, the reaction by the above-described plasma region is required to be made uniform throughout the upper surface of the wafer.

이러한 플라즈마 처리장치의 보다 구체적인 구성에 대하여 좀더 상세히 설명하면 다음과 같다.More specific configuration of the plasma processing apparatus will be described in more detail as follows.

선택적으로 고주파파워가 인가되고, 위치되는 웨이퍼의 저면 중심부위를 밀착 지지하는 하부전극이 마련된다. 상기 하부전극의 상면 가장자리 부위에는 실리콘 (Si)재질로 소정 두께를 갖는 링 형상으로 제작된 클램프링이 설치된다.Optionally, a high frequency power is applied, and a lower electrode is provided to closely support the center of the bottom surface of the wafer to be positioned. A clamp ring formed in a ring shape having a predetermined thickness of silicon (Si) is installed at an upper edge portion of the lower electrode.

상기 클램프링은 상기 하부전극의 상면에 안착된 웨이퍼의 에지부위를 감싸도록 설치되어 웨이퍼를 소정의 위치에 고정시키고, 상부전극 및 하부전극에 의해 형성된 플라즈마가 웨이퍼로 집중되도록 가이드하는 역할을 수행한다.The clamping ring is installed to surround the edge of the wafer seated on the upper surface of the lower electrode to fix the wafer at a predetermined position and guide the plasma formed by the upper electrode and the lower electrode to be concentrated onto the wafer. .

한편, 상기 클램프링 및 하부전극의 사이에는 절연링이 개재되어 상기 클램프링을 받쳐주는 역할을 수행하도록 구성된다.On the other hand, the insulating ring is interposed between the clamp ring and the lower electrode is configured to serve to support the clamp ring.

이러한 구성에 따라 식각 공정을 수행하게 되면, 플라즈마 상태의 공정가스는 상기 클램프링과 절연링 사이의 틈새를 통하여 침투하게 되고, 상기 클램프링은 계속적인 식각에 의해 변형을 일으킨다.When the etching process is performed according to this configuration, the plasma process gas penetrates through the gap between the clamping ring and the insulating ring, and the clamping ring is deformed by continuous etching.

이렇게 변형된 클램프 링은 공정 과정에서 플라즈마 형성 영역을 불균일하게 형성시켜 공정불량을 초래하게 되고, 이에 따라 클램프 링의 교체 사용이 요구된다. 특히, 고주파 파워의 에너지가 높을수록 클램프링의 식각 정도는 더욱 심화되어 그 수명 또한 더욱 단축되게 되는 문제점이 있다.This deformed clamp ring unevenly forms the plasma forming region during the process, resulting in a process defect, and thus requires the replacement of the clamp ring. In particular, the higher the energy of the high frequency power has a problem that the etching degree of the clamping ring is further deepened and its life is further shortened.

따라서, 본 발명은 상술한 문제점을 해결하기 위하여 안출 된 것으로서, 본 발명의 목적은 클램프링의 재질을 개선하여 클램프링의 수명을 증대시키는 플라즈마 처리장치를 제공하는 데 있다.Accordingly, the present invention has been made to solve the above-described problems, an object of the present invention is to provide a plasma processing apparatus for improving the life of the clamp ring by improving the material of the clamp ring.

상술한 목적을 달성하기 위하여 본 발명은 소정의 플라즈마처리 공정이 수행되는 챔버와; 상기 처리챔버의 상측에 설치된 상부전극과; 상기 처리챔버의 하부에 설치됨과 아울러 그 상면에 웨이퍼를 안착시키는 하부전극과; 상기 하부전극의상면에 안착된 웨이퍼의 에지부를 고정하는 클램프링을 구비하며; 상기 클램프링은 고강도, 내식성, 내산화성, 내열충격성을 갖는 재질로 된 것을 특징으로 한다.In order to achieve the above object, the present invention includes a chamber in which a predetermined plasma treatment process is performed; An upper electrode provided above the processing chamber; A lower electrode installed under the processing chamber and seating a wafer on an upper surface thereof; A clamping ring for fixing an edge of a wafer seated on an upper surface of the lower electrode; The clamp ring is made of a material having high strength, corrosion resistance, oxidation resistance, thermal shock resistance.

상기 클램프링의 재질은 탄화규소(SiC)로 함이 바람직하다.The clamp ring is preferably made of silicon carbide (SiC).

상기 공정은 건식식각 공정으로 함이 바람직하다.The process is preferably a dry etching process.

도 1은 본 발명의 일 실시 예에 의한 플라즈마 처리장치의 구성을 개략적으로 도시한 단면도,1 is a cross-sectional view schematically showing the configuration of a plasma processing apparatus according to an embodiment of the present invention;

도 2는 상기 도 1의 I표시부를 확대해서 도시한 확대도,FIG. 2 is an enlarged view of an enlarged I display unit of FIG. 1;

도 3은 상기 도 1의 클램프링의 평면도이다.3 is a plan view of the clamp ring of FIG. 1.

<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>

1 : 챔버 3 : 상부전극1 chamber 3 upper electrode

5 : 샤워헤드 7 : 하부전극5: shower head 7: lower electrode

12a,12b : 절연링 14 : 클램프링12a, 12b: insulation ring 14: clamp ring

W : 웨이퍼W: Wafer

이하 첨부된 도면 도 1내지 도 4를 참조하여 본 발명의 일 실시 예에 의한 구성 및 작용에 대해서 더욱 상세히 설명한다.Hereinafter, a configuration and an operation according to an embodiment of the present invention will be described in detail with reference to FIGS. 1 to 4.

도1,2에 도시된 바와 같이 소정의 플라즈마 형성 공간을 이루는 챔버(1)와, 상기 챔버(1)의 상측에 설치되는 상부전극(3)과, 상기 상부전극(3)의 내면에 설치된 샤워헤드(5)와, 챔버(1)의 내부 바닥부에 설치된 하부전극(7)과, 상기 챔버(1)의 내부를 소정의 진공도로 유지시키도록 배기라인(9)을 매개로 연결된 진공펌프(11)로 구성된다.1 and 2, a chamber 1 forming a predetermined plasma formation space, an upper electrode 3 disposed above the chamber 1, and a shower provided on an inner surface of the upper electrode 3 are shown. The head 5, the lower electrode 7 installed in the inner bottom of the chamber 1, and a vacuum pump connected through the exhaust line 9 to maintain the inside of the chamber 1 at a predetermined vacuum ( 11).

샤워헤드(5)는 가스공급관(13)을 통해 공급되는 가스를 그 내부에 일시적으로 저장시키도록 버퍼공간(5a)이 마련되고, 상기 버퍼공간(5a)을 통해 저장된 가스가 상기 챔버(1)의 내부로 분사되도록 복수개의 가스분사홀(5b)이 마련된다.The shower head 5 is provided with a buffer space 5a to temporarily store the gas supplied through the gas supply pipe 13 therein, and the gas stored through the buffer space 5a is stored in the chamber 1. A plurality of gas injection holes (5b) is provided to be injected into the interior of the.

상기 하부전극(7)은 웨이퍼(W)를 그 상면에 안착시키는 것으로서, 그 상면 에지부에 제1,2절연링(12a,12b)을 매개로 클램프(14)링이 설치된다. 상기 클램프링(13)은 상기 하부전극(7)의 상면에 안착된 웨이퍼(W)의 에지부위을 에워싸게 환형으로 이루어진 것으로서, 상기 하부전극(7)의 상면에 안착된 웨이퍼(W)를 소정의 위치에 고정시키는 역할을 한다. 또한, 상기 플라즈마의 환경영역을웨이퍼(W)의 외측 부위까지 확대 형성하여 웨이퍼(W)의 전면이 플라즈마 영역의 중심부위에 위치되어 전체적으로 균일한 작용을 받게 한다.The lower electrode 7 mounts the wafer W on the upper surface thereof, and the clamp 14 ring is provided at the upper edge portion of the lower electrode 7 via the first and second insulating rings 12a and 12b. The clamp ring 13 is formed in an annular shape to surround the edge portion of the wafer W seated on the top surface of the bottom electrode 7, and the wafer W seated on the top surface of the bottom electrode 7 is predetermined. It serves to fix in position. In addition, the environmental region of the plasma is expanded to the outer portion of the wafer W so that the entire surface of the wafer W is positioned above the center of the plasma region to have an overall uniform action.

이러한 클램프 링(14)의 재질은 강도가 높고, 내식성, 내산화성, 내열충격성이 우수한 소재로 제작함이 바람직하고, 보다 바람직하게는 탄화규소(SiC)로 한다.The material of the clamp ring 14 is preferably made of a material having high strength, excellent corrosion resistance, oxidation resistance, and thermal shock resistance, and more preferably silicon carbide (SiC).

다음은 상술한 바와 같이 구성된 플라즈마 처리장치에 의한 식각동작에 따른 클램프 링(14)의 작용에 대해서 설명한다.Next, the operation of the clamp ring 14 in the etching operation by the plasma processing apparatus configured as described above will be described.

먼저, 식각 공정은 진공상태의 공정 챔버(1) 내부에 가스공급관(13)을 통하여 제거될 층과 반응하게 되는 가스를 공급하고, 이 가스를 플라즈마 상태로 형성시켜 PR(Photo Resist)패턴에 의해 노출된 웨이퍼(W)의 특정 막과 반응토록 함으로써 불필요한 부위를 제거하게 된다.First, the etching process supplies a gas to be reacted with the layer to be removed through the gas supply pipe 13 inside the process chamber 1 in a vacuum state, and forms the gas in a plasma state by a PR (Photo Resist) pattern. Unnecessary portions are removed by allowing the exposed wafer W to react with a specific film.

상술한 바와 같이 공급되는 가스의 플라즈마 상태는 상부전극(3) 및 하부전극(7)에 RF(Radio Frequency)파워를 인가함으로써 형성된다.As described above, the plasma state of the supplied gas is formed by applying RF (Radio Frequency) power to the upper electrode 3 and the lower electrode 7.

이러한 플라즈마 상태의 공정가스는 상기 클램프링(14)과 절연링(12a,12b)사이의 틈새를 통하여 침투하여 식각되게 된다.The process gas in the plasma state penetrates through the gap between the clamp ring 14 and the insulating rings 12a and 12b to be etched.

그러나, 이때 상기 클램프링(14)은 고강도, 내식성, 내산화성, 내열충격성을 갖는 재질인 탄화규소(SiC)로 제작되어 식각량이 실리콘(Si) 재질로 제작된 종래에 비하여 월등히 줄어 들게된다.However, in this case, the clamp ring 14 is made of silicon carbide (SiC), which is a material having high strength, corrosion resistance, oxidation resistance, and thermal shock resistance, so that the etching amount is significantly reduced compared to the conventional one made of silicon (Si) material.

다음은 도 3 및 [표 1]를 참조로 하여 본 발명에 의한 탄화규소로 제작된 클램프링 및 실리콘 재질로 제작된 종래의 클램프링의 식각량 및 PM주기를 비교한다.Next, with reference to Figure 3 and Table 1 compare the etching amount and the PM cycle of the clamp ring made of silicon carbide according to the present invention and the conventional clamp ring made of silicon material.

도 3에서 A~D표시부는 두께 측정위치를 나타내며, 종래의 클램프링 또한 상기 도면과 동일한 형태를 갖는다.In Fig. 3, the A to D display portions represent the thickness measurement positions, and the conventional clamp ring also has the same shape as the above figure.

[단위 ; ㎜][unit ; Mm

상기 [표 1]에 나타난 바와 같이 공정을 실시하지 않은 초기상태에서 각 클램프링의 두께는 각각 1.50㎜이다As shown in Table 1, the thickness of each clamp ring is 1.50 mm in the initial state without the process.

그러나, 공정을 1회 실시한 상태에서 각부(A~D표시부)서 측정된 두께는 종래의 클램프링은 1.1㎜,1.12㎜, 1.11㎜,1.09㎜이며, 본 발명에 의한 클램프링은 각각 0.95㎜,0.97㎜, 0.95㎜, 0.98㎜로 나타났다, 한편, 그 PM(예비정비)주기가 종래에는 42시간이었으며, 본 발명에 의해서는 90시간으로 나타났다.However, the thickness measured at each part (A-D display part) in the state which performed the process once is 1.1 mm, 1.12 mm, 1.11 mm, 1.09 mm in the conventional clamp ring, and 0.95 mm, respectively. 0.97 mm, 0.95 mm, and 0.98 mm. On the other hand, the PM (preliminary maintenance) cycle was 42 hours in the past, and according to the present invention was 90 hours.

공정을 2회 실시한 상태에서는 각부(A~D표시부)서 측정된 두께는 종래의 클램프링은 0.72㎜,0.75㎜, 0.73㎜,0.73㎜이며, 본 발명에 의한 클램프링은 각각 0.51㎜,0.53㎜, 0.54㎜, 0.52㎜로 나타났다, 한편, 그 PM(예비정비)주기가 종래에는 45시간이었으며, 본 발명에 의해서는 90시간으로 나타났다.In the state where the process was carried out twice, the thickness measured at each part (A-D display part) is 0.72 mm, 0.75 mm, 0.73 mm, 0.73 mm in the conventional clamp ring, and the clamp ring of the present invention is 0.51 mm, 0.53 mm, respectively. In the meantime, the PM (preliminary maintenance) cycle was 45 hours in the prior art and 90 hours in the present invention.

공정을 3회 실시한 상태에서는 각부(A~D표시부)서 측정된 두께는 종래의 클램프링은 0.30㎜,0.29㎜, 0.27㎜,0.31㎜이며, 본 발명에 의한 클램프링은 각각 0.27㎜,0.31㎜, 0.29㎜, 0.30㎜로 나타났다, 한편, 그 PM(예비정비)주기가 종래에는 40시간이었으며, 본 발명에 의해서는 50시간으로 나타났다.In the state of performing the process three times, the thickness measured at each part (A-D display part) is 0.30 mm, 0.29 mm, 0.27 mm, 0.31 mm in the conventional clamp ring, and the clamp ring according to the present invention is 0.27 mm, 0.31 mm, respectively. On the other hand, the PM (preliminary maintenance) cycle was 40 hours in the past and 50 hours in the present invention.

상술한 바와 같이 이건 발명에 의해 탄화규소(SiC)로 제작된 클램프 링(14)이 그 식각량이 월등히 줄어들었음을 알 수 있고, 그에 따른 PM주기가 종래에 비하여 2배로 증가되었음을 쉽게 알 수 있다.As described above, it can be seen that the etch amount of the clamp ring 14 made of silicon carbide (SiC) has been greatly reduced by the present invention, and it is easy to see that the PM cycle has been doubled as compared with the related art.

상술한 바와 같이 본 발명은 클램프링의 재질을 그 강도가 높고, 내식성, 내산화성, 내열충격성이 우수한 탄화규소로 함에 따라 그 사용시간을 연장시키는 이점이 있다.As described above, the present invention is advantageous in that the clamp ring is made of silicon carbide, which has high strength and excellent corrosion resistance, oxidation resistance, and thermal shock resistance.

이와 같이, 본 발명의 상세한 설명에서는 구체적인 실시 예에 관해 설명하였으나, 본 발명의 범주에서 벗어나지 않는 한도 내에서 여러 가지 변형이 가능함은 물론이다. 그러므로, 본 발명의 범위는 설명된 실시 예에 국한되어 정해져서는 안되며 후술하는 특허청구범위 뿐만 아니라 이 특허청구범위와 균등한 것들에 의해 정해져야 한다.As described above, in the detailed description of the present invention, specific embodiments have been described. However, various modifications may be made without departing from the scope of the present invention. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be defined by the claims below and equivalents thereof.

Claims (3)

소정의 플라즈마처리 공정이 수행되는 챔버;A chamber in which a predetermined plasma treatment process is performed; 상기 처리챔버의 상측에 설치된 상부전극;An upper electrode provided above the processing chamber; 상기 처리챔버의 하부에 설치됨과 아울러 그 상면에 웨이퍼를 안착시키는 하부전극;A lower electrode installed under the processing chamber and seating a wafer on an upper surface thereof; 상기 하부전극의 상면에 안착된 웨이퍼의 에지부를 고정하는 클램프링을 구비하며;A clamping ring fixing an edge portion of a wafer seated on an upper surface of the lower electrode; 상기 클램프링은 고강도, 내식성, 내산화성, 내열충격성을 갖는 재질로 된 것을 특징으로 하는 플라즈마 처리장치.The clamp ring is a plasma processing apparatus, characterized in that the material having a high strength, corrosion resistance, oxidation resistance, thermal shock resistance. 제 1항에 있어서,The method of claim 1, 상기 클램프링의 재질은 탄화규소(SiC)인 것을 특징으로 하는 플라즈마 처리장치.Plasma processing apparatus characterized in that the material of the clamp ring is silicon carbide (SiC). 제 1항에 있어서,The method of claim 1, 상기 공정은 건식식각공정인 것을 특징으로 하는 플라즈마 처리장치.The process is a plasma processing apparatus, characterized in that the dry etching process.
KR1020030034156A 2003-05-28 2003-05-28 Plasma Processing System KR20040102633A (en)

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