KR20040096700A - Apparatus for gas supplying and method for the same in semiconductor device - Google Patents

Abstract

PURPOSE: An apparatus for introducing gas in fabricating a semiconductor device is provided to minimize a process defect caused by an incorrect flowrate of process gases by flowing the process gases after the flowrate of each gas is checked. CONSTITUTION: Process gases are supplied to the inside of a chamber by the first to nth process gas lines(20,30). The first to nth MFC's(mass flow controllers)(22,32) control the flowrate of each process gas flowing through the first to nth process gas lines, connected to the first to nth process gas lines, respectively. The first to nth MFM's(mass flow meters)(24,34) measure the flowrate of the respective process gases passing through the first to nth MFC's, installed in the rear portions of the first to nth MFC's in the first to nth process gas lines. A calculation part receives the flowrate of each process gas measured by the first to nth MFM's and calculates the ratio of the flowrates of the process gases.

Description

Apparatus for gas supplying and method for the same in semiconductor device

The present invention relates to a gas inflow device used in the manufacturing process of a semiconductor device. More particularly, the present invention relates to an apparatus for introducing the process gases into the chamber while sensing the flow rate ratio of the process gases in the chemical vapor deposition process.

In recent years, with the rapid spread of information media such as computers, semiconductor devices are also rapidly developing. In terms of its function, the semiconductor device is required to operate at a high speed and to have a large storage capacity. In response to these demands, the manufacturing technology of the semiconductor device has been developed to improve the degree of integration, reliability, and response speed. Accordingly, the demand for a chemical vapor deposition technique for forming a film as a main technique for improving the integration degree of the semiconductor device is also becoming more stringent.

Recently, the semiconductor device has a design rule of 0.15 μm or less. As the semiconductor device is ultra-highly integrated as described above, even a slight difference in manufacturing process conditions causes a great influence on the operation characteristics and reliability of the semiconductor device. Therefore, the film formed on the substrate should be optimized to have a uniform composition in the entire area of the substrate.

In order to form a film having a uniform composition as described above, process gases must be accurately provided at a set flow rate to a chamber in which the substrate is loaded. To this end, the conventional gas inlet device is equipped with a mass flow controller (hereinafter referred to as MFC) to adjust the flow rate of the process gases.

The MFC regulates the flow rate of each process gas, but cannot confirm whether the process gases via the MFC actually flow into the chamber at the correct flow rate. In addition, the flow rate ratio of each process gas introduced into the chamber may not be confirmed in real time.

Therefore, when the process gases are not normally controlled due to the malfunction of the MFC or the like, the process gas cannot be introduced into the chamber at the correct flow rate. In addition, even if the flow rate of any one of the process gases is out of the reference, the flow rate ratio of the process gases is out of the set value does not form a film having normal characteristics.

Accordingly, a first object of the present invention is to provide a gas inflow device for introducing a process gas into a chamber at a set flow rate in a semiconductor manufacturing process.

It is a second object of the present invention to provide an inflow method for introducing a process gas at a set flow rate ratio.

1 shows a schematic configuration of a gas inlet device according to an embodiment of the present invention.

2 is a block diagram of a controller connected to a calculator.

3 is a flowchart illustrating a gas inflow method according to an embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

20: first process gas line 22: first MFC

24: first MFM 30: second process gas line

32: second MFC 34: second MFM

40: Purification Gas Line

In order to achieve the first object described above, the present invention,

First to nth process gas lines for supplying process gases into the chamber;

First to n-th mass flow controllers connected to the first to n-th process gas lines, respectively, to control a flow rate of each process gas flowing into the first to n-th process gas lines;

First through nth stages of the first to nth process flow lines respectively provided at the rear end of the first to nth mass flow controllers, and measuring flow rates of the respective process gases via the first to nth mass flow controllers; n mass flow meter;

Provided is a gas inflow apparatus including an operation unit for receiving a flow rate of the respective process gases measured from the first to n-th mass flow meter, and calculates the flow rate ratio between the respective process gases.

The gas inlet device can be applied to low pressure chemical vapor devices. The chamber also includes a furnace of the low pressure chemical vapor device.

In order to achieve the above second object, the present invention,

Controlling the flow rates of the first to nth process gases;

Measuring flow rates of the first through n-th process gases flowing after controlling the flow rates;

And receiving a flow rate of the first to nth process gases and calculating a flow rate ratio between the first to nth process gases.

In the case of using the gas inlet apparatus and method, the process gas may be flowed after confirming the flow rate ratio between the respective process gases. Therefore, it is possible to minimize the process failure caused by the flow rate ratio of the process gases do not match.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a schematic configuration diagram of a gas inflow device according to an embodiment of the present invention. In FIG. 1, the gas inlet device is mounted in a low pressure chemical vapor device.

Referring to FIG. 1, a furnace 10 in which a film deposition process is performed by low pressure chemical vapor deposition is provided.

First to second process gas lines 20 and 30 for supplying process gases are provided in the furnace 10. The process gases used in this embodiment are N ₂ O and SiH ₄ used in forming the high temperature oxide film (HTO). The process gas varies depending on the type of the film to be deposited, and the process gas line may also be increased or decreased depending on the type of the film to be deposited.

A first process gas line 20 in which the N ₂ O flow is the first MFC (22) to control the flow rate of the N ₂ O is provided. Further, in the second process gas line 30 in which the SiH ₄ is a flow is provided with a second MFC (32) to control the flow rate of the SiH _4.

A first valve V1 for controlling the flow of N ₂ O is provided at the front end of the first MFC 22 in the first process gas line 20. A second valve V2 for controlling the flow of SiH ₄ is provided at the front end of the second MFC 32 in the second process gas line 30.

A first mass flow meter 24 (MFM) is provided at the rear of the first MFC 22 in the first process gas line 20. The first MFM 24 measures the flow rate of the N ₂ O flowing into the first process gas line 20 after passing through the first MFC 22. The N ₂ O is provided to the furnace where the flow rate is controlled by the first MFC 22 to perform a deposition process. Therefore, the flow rate of N ₂ O is provided in the furnace 10 by measuring the flow rate of the N ₂ O in the downstream of the MFC of claim 1 (22) can know exactly in real time.

Similarly, a second MMF 34 is provided after the second MFC 32 in the second process gas line 30. The second MFM 34 measures the flow rate of the SiH ₄ flowing into the second process gas line 30 after passing through the second MFC 32. The SiH ₄ is provided to the furnace where the flow rate is controlled by the second MFC 32 to perform a deposition process. Therefore, the flow rate of the SiH ₄ to be provided in the furnace 10 by measuring the flowrate of said SiH ₄ from the downstream of the MFC of claim 2 (32) can know exactly in real time.

Purification gas lines 40 are provided adjacent to the first process gas line 20 and the second process gas line 30 to introduce a purge gas. In the present embodiment, the purge gas uses nitrogen (N ₂ ). The purge gas lines 40 may be branched from one nitrogen gas source (not shown). Each of the purge gas lines 40 further includes third to fifth mass flow controllers 42, 44, and 46 for controlling the flow rate of nitrogen gas flowing into the respective purge gas lines 40. . One of the purge gas lines 40 is connected to the first process gas line 20, and a valve for controlling the introduction of the nitrogen gas into the first process gas line 20 at the connection portion. V6 is provided. In addition, any one of the purge gas lines 40 is connected to the second process gas line 30, respectively, and controls the inflow of the nitrogen gas into the second process gas line 30 at the connection site. A valve V7 is provided. In this case, the respective connection sites are located at the front ends of the first MFC 22 and the second MFC 32, respectively.

The calculation unit 50 receives flow rates of the process gases measured from the first and second MFMs 24 and 34, respectively, and calculates a flow rate ratio of the process gases. In addition, the calculation unit 50 calculates by taking a conversion factor to the flow rate of each process gas, and based on the flow rate of the process gas measured by the first and second MFM (24, 34) and other The flow rate ratio converted to the kind of gas can be calculated.

It may be further provided with a monitor unit (not shown) connected to the operation unit 50 to display a ratio signal of the flow rate of the N ₂ O and SiH ₄ output from the operation unit 50.

The control unit 60 is connected to the operation unit 50 and controls the inflow of the N ₂ O and SiH ₄ when the flow rate ratio of the N ₂ O and SiH ₄ output from the operation unit 50 is outside the set range. It is provided.

2 is a block diagram of a controller connected to a calculator.

The control unit 60 is a server that is the main equipment controller (60a) to control each valve according to the flow rate signal of the N ₂ O and SiH _4, transfer the flow rate signal of the N ₂ O and SiH ₄ as a host ( 60b) and a host 60c configured to set an interlock of the main facility controller 60a by determining whether the signal received from the server 60b is outside the set range. The main facility controller 60a, the server 60b, and the host 60c input and output signals in both directions. Therefore, when the flow ratio of N ₂ O and SiH ₄ is out of the setting range by the control unit 60 having the above configuration, the inflow of N ₂ O and SiH ₄ is stopped.

Specifically, when the flow rate ratio of the N ₂ O and SiH ₄ is out of a set range, the main facility controller 60a operates the components of the gas apparatus.

When an interlock setting signal is applied to the main facility controller 60a via the host 60c and the server 60b, the gas flow to the first and second process gas lines 20 and 30 is controlled. Close each valve V1, V2. Subsequently, all remaining gases in the first and second process gas lines 20 and 30 are pumped. In addition, the MFCs and the respective valves provided in the purge gas line 40 are adjusted to return the inside of the furnace 10 to the normal pressure.

When the furnace 10 is returned to the normal pressure by the nitrogen, the substrate loaded in the furnace 10 may be unloaded.

3 is a flowchart illustrating a gas inflow method according to an embodiment of the present invention.

Hereinafter, the method of forming a high temperature oxide film using the above-mentioned gas inflow apparatus is demonstrated to an example.

Nitrogen gas is flowed into the first and second process gas lines 20 and 30 (S10). The process is a stand-by process for depositing a high temperature oxide film, and the first and second process gases. This is done to purge the lines 20 and 30 inside.

The nitrogen gas flowing into the first process gas line 20 has a flow rate controlled by the first MFC 22, and the nitrogen gas flowing into the second process gas line 30 passes to the second MFC 32. The flow rate is adjusted by the (S12)

The flow rate of the nitrogen gas via the first MFC 22 is measured by the first MFM 24. Further, the flow rate of nitrogen gas via the second MFC 32 is continuously measured by the second MFM 34. (S14)

At this time, the nitrogen gas measured by the first MFM 24 takes a conversion factor and converts it to a flow rate of N ₂ O. In addition, the nitrogen gas measured by the second MFM 34 takes a conversion factor and converts it into a flow rate of SiH ₄ . The ratio of the flow rate converted into N ₂ O and the flow rate converted into SiH ₄ is calculated. (S16)

It is determined whether the flow rate ratio converted into the N ₂ O and the SiH ₄ is outside the set range. (S18)

When the flow rate ratio converted into N ₂ O and SiH ₄ is out of the set range, the nitrogen gas flow may be stopped and the apparatus may be checked. (S20) The flow rate ratio converted into N ₂ O and SiH ₄ is within the set range. In this case, the nitrogen gas via the first MFM 24 and the second MFM 34 is vented to the outside. Then, a gas flow process for depositing the film is continuously performed.

Before the process gas is introduced by the above process, it is possible to check whether the gas inlet device is normally operated.

Subsequently, N ₂ O and SiH _{4, which} are process gases, are flowed into the first and second process gas lines 20 and 30.

The N ₂ O flows by adjusting the flow rate by the first MFC 22, and the SiH ₄ flows by adjusting the flow rate by the second MFC (32) (S24).

The flow rate of N ₂ O flowing into the furnace via the first MFC 22 is measured by the first MFM 24. Further, the flow rate of SiH ₄ flowing into the furnace via the second MFC 32 is continuously measured by the second MFM 34. (S26)

The flow rate ratios of the N ₂ O and SiH ₄ measured by the first MFM 24 and the second MFM 34 are calculated in real time.

Subsequently, it is determined whether the calculated flow rate ratios of N ₂ O and SiH ₄ are out of a set range. (S30) The set range of the flow rate ratios of N ₂ O and SiH ₄ forms a high temperature oxide film so as to have characteristics required by a semiconductor device. Provided in an appropriate range.

If, for the operation of the case exceeds the limit the flow rate of N ₂ O and SiH ₄ is set, the N ₂ O and SiH _4, the flow of the N ₂ O and SiH ₄ so determined that the proper flow rate to form the high temperature oxide (S32) Subsequently, the substrate 10 is unloaded after returning to normal pressure in the furnace 10.

On the other hand, if the calculated flow rate ratio of N ₂ O and SiH ₄ is within a set range, the N ₂ O and SiH ₄ are continuously flowed into the furnace 10 until a film is deposited at a thickness set on the substrate. The N ₂ O and SiH ₄ are introduced. (S34)

When the film is formed by the above process, the flow rate ratio of N ₂ O and SiH ₄ introduced into the furnace may be measured in real time. In addition, the deposition process may be stopped if the flow rate ratio of the N ₂ O and SiH ₄ is out of the set range. Accordingly, it is possible to prevent the flow rate of the N ₂ O and SiH ₄ of the film deteriorate not appropriate.

As described above, according to the present invention, the process gases may be flowed after confirming the flow rate ratio between the respective process gases. Therefore, it is possible to minimize the process failure caused by the flow rate ratio of the process gases do not match.

As described above, although described with reference to a preferred embodiment of the present invention, those skilled in the art will be variously modified without departing from the spirit and scope of the invention described in the claims below. And can be changed.

Claims (7)

First to nth process gas lines for supplying process gases into the chamber; First to n-th mass flow controllers connected to the first to n-th process gas lines, respectively, to control a flow rate of each process gas flowing into the first to n-th process gas lines; First through nth stages of the first to nth process flow lines respectively provided at the rear end of the first to nth mass flow controllers, and measuring flow rates of the respective process gases via the first to nth mass flow controllers; n mass flow meter; And a calculation unit configured to receive flow rates of the respective process gases measured by the first to nth mass flow meters, and calculate a flow rate ratio between the respective process gases. 2. The gas inlet of claim 1, further comprising first to n-th valves respectively in front of the first to n-th mass flow controllers in the first to n-th process gas lines. Device. The semiconductor device of claim 1, further comprising a controller connected to the calculator and configured to stop the inflow of the respective process gases when a flow rate ratio between the respective process gases output from the calculator is outside a set range. Gas inlet device in the production of The method of claim 1, adjacent to the first to nth process gas lines, And purifying gas lines for introducing purge gas, and each of the purge gas lines further includes first to n-th mass flow controllers for controlling a flow rate of purge gas flowing into the purge gas lines. Gas inlet device in the manufacture of semiconductor devices. 2. The gas inlet apparatus of claim 1, wherein the chamber into which the process gases are introduced comprises a furnace for forming a film on the substrate by low pressure vapor deposition. Controlling the flow rates of the first to nth process gases; Measuring flow rates of the first through n-th process gases flowing after controlling the flow rates; And receiving a flow rate of the first to n-th process gases to calculate a flow rate ratio between the first to n-th process gases. 7. The method of injecting gas into a semiconductor device according to claim 6, further comprising stopping the inflow of the respective process gases when the calculated flow rate ratio is out of a set range.