KR20040085378A - The organic electro-luminescence device - Google Patents

Abstract

PURPOSE: An organic electroluminescence device is provided to prevent a signal disconnection between an organic light emitting unit and a thin film transistor array unit. CONSTITUTION: An organic electroluminescence device(399) comprises a first substrate(400) and a second substrate(500) defined into a light emitting portion and a peripheral portion, and sealed with each other by a sealant pattern(600) coated along the peripheral portion; a switching element corresponding to pixels of the first substrate; a driving element connected to the switching element; a common electrode pattern(420) arranged in the peripheral portion of the first substrate, wherein the common electrode pattern permits common signals to be input and output to and from the common electrode pattern; a first connection electrode(430) connected to the driving element; an organic film pattern arranged on the common electrode pad; a second connection electrode(460) contacting the common electrode pad, and which is formed along the organic film pattern; a first electrode(502) formed on the second substrate opposed to the first substrate, and which has a side contacting the second connection electrode; an organic light emitting layer(504) formed beneath the first electrode; and a second electrode(506) formed beneath the organic light emitting layer, and which contacts the first connection electrode.

Description

The organic electro-luminescence device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a top emission organic light emitting device, and more particularly, to a dual plate organic light emitting device (DPOLED) having an organic light emitting unit and a thin film transistor array unit formed on a separate substrate and bonded to each other.

In general, the organic light emitting device injects electrons and holes into the light emitting layer from the electron injection electrode and the hole injection electrode, respectively, to inject the injected electrons. ) Is a device that emits light when the exciton, which is a combination of holes and holes, drops from the excited state to the ground state.

Due to this principle, unlike a conventional thin film liquid crystal display device, since a separate light source is not required, there is an advantage in that the volume and weight of the device can be reduced.

In addition, the organic EL device exhibits high quality panel characteristics (low power, high brightness, high reaction rate, low weight). Because of these characteristics, organic light emitting diodes are considered to be powerful next generation displays that can be used in most electronic applications such as mobile communication terminals, PDAs, camcorders, Palm PCs.

In addition, since the manufacturing process is simple, there is an advantage that can reduce the production cost much more than the conventional liquid crystal display (LCD).

The method of driving the organic light emitting diode can be classified into a passive matrix type and an active matrix type.

The passive matrix type organic light emitting device has a simple structure and a simple manufacturing method. However, the passive matrix type organic light emitting device has a high power consumption and a large area of the display device, and the opening ratio decreases as the number of wirings increases.

On the other hand, an active matrix organic light emitting diode has an advantage of providing high luminous efficiency and high image quality.

1 is a view schematically showing a configuration of a conventional bottom emission type active matrix type organic light emitting device.

As illustrated, the organic light emitting diode 10 includes a thin film transistor (T) array portion 14 on the transparent first substrate 12 and a first electrode 16 on the thin film transistor array portion 14. ) And the organic light emitting layer 18 and the second electrode 20.

In this case, the organic light emitting layer 18 expresses colors of red (R), green (G), and blue (B). In general, the organic light emitting layer 18 separately emits red, green, and blue for each pixel (P). The organic material of the pattern is used.

The first substrate 12 is bonded to the second substrate 28 having the moisture absorbent 22 and the sealant 26, thereby completing the encapsulated organic light emitting device 10.

At this time, the moisture absorbent 22 is for removing moisture and oxygen that can penetrate into the capsule, and a part of the substrate 28 is etched and the moisture absorbent 22 is filled in the etched portion and fixed with a tape 25. .

FIG. 2 is a plan view schematically showing the configuration of a single pixel constituting an active matrix organic light emitting device. (For convenience, the light emitting layer and the second electrode above the light emitting layer are omitted.)

In general, the active matrix thin film transistor array unit includes a switching element T _S , a driving element T _D , and a storage capacitor C _{ST for} each of a plurality of pixels defined in the substrate 12. According to a characteristic, the switching element T _S or the driving element T _D may be formed of a combination of one or more thin film transistors, respectively.

In this case, the substrate 12 uses a transparent insulating substrate, and the material may be, for example, glass or plastic.

As shown in the drawing, a gate wiring 32 formed in one direction spaced apart from each other by a predetermined interval on the substrate 12 and a data wiring 34 intersecting with the gate wiring 32 and an insulating film interposed therebetween.

At the same time, a power supply wiring 35 spaced in parallel with the data wiring 34 and intersecting the gate wiring is formed.

The switching element T _S and the driving element T _D include gate electrodes 36 and 38, an active layer 40 and 42, a source electrode 46 and 48, and a drain electrode 50 and 52, respectively. Thin film transistors are used.

In the above-described configuration, the gate electrode 36 of the switching element T _S is connected to the gate line 32, and the source electrode 46 is connected to the data line 34.

The drain electrode 50 of the switching element T _S is connected to the gate electrode 38 of the driving element T _D through the contact hole 54.

The source electrode 48 of the driving element T _D is connected to the power line 35 through the contact hole 56.

In addition, the drain electrode 52 of the driving element T _D is configured to contact the first electrode 16 configured in the pixel portion P.

At this time, the power supply wiring 35 and the first electrode 15, which is a polycrystalline silicon layer below it, overlap each other with an insulating layer therebetween to form a storage capacitor C _ST .

3 is a plan view schematically showing the overall planar configuration of the organic light emitting device having the array configuration as described above.

As illustrated, the organic light emitting diode 10 may include a first substrate 12 including a thin film transistor array portion and a light emitting portion, and a first adhesive 12 bonded to the first substrate 12 through a sealant 26 to protect the structure of the first substrate 12. It consists of two board | substrates 28. As shown in FIG.

One side of the first substrate 12 includes a data pad portion E, and one side of the substrate that is not parallel to the data pad portion and the other side of the substrate parallel to the gate pad portion and the power wiring pads F1 and F2, respectively. It is composed.

The common electrode pad 39 is formed at one side of the substrate 12 parallel to the data pad part E. FIG.

In this case, the common electrode pad 39 serves to maintain a potential of the second electrode by applying a common voltage to the second electrode (cathode electrode) (20 in FIG. 1).

Hereinafter, a cross-sectional structure of a conventional EL device according to the related art will be described with reference to FIG. 4.

4 is a cross-sectional view taken along line III-III ′ of FIG. 2 and IV-IV ′ of FIG. 3.

(The configuration of Fig. 2 is a part of Fig. 3, so it is considered to be cut continuously and this is shown in the cross-sectional view of Fig. 4).

As illustrated, the organic light emitting diode includes a thin film transistor T _D , which is a driving device including a gate electrode 38, an active layer 42, a source electrode 56, and a drain electrode 52. a drive element of (T _D) across the upper portion of the insulating film 57, the driving device (T _D), the first and the electrode (anode electrode) 16, the first electrode 16 contacting the drain electrode 52 of the The light emitting layer 18 which emits light of a specific color on the upper portion of the light emitting layer 18, and the second electrode (cathode electrode) 20 is formed on the light emitting layer 18. (In the case of a p + type thin film transistor, the first electrode in contact with the drain electrode is an anode electrode, and the second electrode is a cathode electrode.)

The storage capacitor C _ST is configured in parallel with the driving element T _D , and the source electrode 56 is configured to be in contact with the power supply line 35 which is the second electrode of the storage capacitor C _ST . The first electrode 15 of the storage capacitor C _{ST is} formed below the wiring 35.

The second electrode 20 is formed on the entire surface of the substrate 12 including the driving device T _D , the storage capacitor C _ST , and the organic light emitting layer 18.

In the above-described configuration, a common electrode pad 39 for applying a common voltage to the second electrode 20 is disposed outside the substrate 12 and the source and drain electrodes 56 and 52 of the driving element T _D. The same layer is formed of the same material.

A plurality of insulating layers are formed on the common electrode pad 39, and the first contact hole 60 and the second contact hole 62 are formed to expose the common electrode pad 39 by etching them.

The first contact hole 60 serves to contact the second electrode 20 and the common electrode pad 39, and the second contact hole 62 is connected to the common electrode pad 39 from the outside. It is configured to input a signal.

Therefore, the organic light emitting diode is a signal applied from the driving device to the first electrode 16 below the light emitting layer T _D , and from the common electrode pad 39 to the second electrode 20 above the light emitting layer. The light emitting layer 18 emits light according to an applied common signal to display an image.

At this time, the emitted light is emitted to the lower portion of the thin film transistor array through the transparent first electrode 16.

Through the above-described configuration, a conventional organic light emitting diode may be manufactured.

However, as in the conventional case, when the thin film transistor array portion and the light emitting portion are formed on a single substrate, the product of the yield of the thin film transistor and the yield of the organic light emitting layer determines the yield of the panel on which the thin film transistor and the organic light emitting layer are formed.

Therefore, the lower plate configured as in the conventional case had a problem that the yield of the panel is greatly limited by the yield of the organic light emitting layer.

In particular, even if the thin film transistor is well formed, when the organic light emitting layer using the thin film having a thickness of about 1000 mV is caused by the foreign matter or other factors, the panel is judged as a poor grade.

This leads to a loss of overall costs and raw material costs that were required to manufacture good quality thin film transistors, and had a problem in that the yield was lowered.

In addition, the lower light emitting method as described above has a high stability and process freedom due to encapsulation, but has a limited aperture ratio, making it difficult to apply to high-resolution products.

Although not described above, the upper light emitting method is advantageous in terms of product life because the light is directed upward, so the direction of light propagation is independent of the lower thin film transistor array unit, and the thin film transistor can be easily designed and the aperture ratio can be improved. In the upper light emitting structure of the material, the material selection range is narrow as the cathode is usually positioned on the organic light emitting layer, so the transmittance is limited and the light efficiency is reduced, and when the thin film type protective film is to be configured to minimize the light transmittance. There was a problem that does not block the outside air enough.

The present invention has been proposed for the purpose of solving the above, and proposes an organic light emitting device of the top emission type and a method of manufacturing the same by combining the thin film transistor array unit and the light emitting unit on a separate substrate.

In this case, the dual plate organic light emitting diode according to the present invention constitutes a first connection electrode having a predetermined height to connect the second electrode of the light emitting part and the drain electrode of the thin film transistor (driving thin film transistor), and The second connection electrode is configured as a means for connecting the common electrode pad formed on the outer side of the first electrode (common electrode) and the thin film transistor array unit.

In the above-described configuration, a first feature of the present invention is to form an organic film pattern at a predetermined height under the second connection electrode, and a second feature of the present invention includes a seal pattern formed in an outer region of the organic light emitting device. The cell gap holding means corresponds to the area between the light emitting portions.

Due to the first feature, a poor contact between the second connection electrode and the first electrode of the light emitting unit can be improved.

In addition, the first connection electrode and the light emission due to the lifting phenomenon of the substrate, which occurs because the cell gap between the inside of the substrate and the outside of the substrate is different from each other during the bonding of the first substrate and the second substrate. There is an advantage that can prevent the failure that the negative second electrode does not contact.

1 is a cross-sectional view schematically showing a conventional organic light emitting device,

2 is a plan view schematically showing a configuration of a single pixel constituting a conventional organic light emitting device,

3 is a plan view schematically showing a planar configuration of an organic light emitting device,

4 is a cross-sectional view taken along line III-III ′ of FIG. 2 and IV-IV ′ of FIG. 3.

5 is a plan view schematically showing the configuration of an organic light emitting display device according to a first embodiment of the present invention;

FIG. 6 is a cross-sectional view taken along line VV ′ of FIG. 5;

7 is a plan view schematically illustrating a configuration of an organic light emitting diode according to a second exemplary embodiment of the present invention.

FIG. 8 is a cross-sectional view taken along the line VI-VI ′ of FIG. 7;

9 is a plan view showing the shape of an organic film pattern according to another embodiment of the present invention;

FIG. 10 is a cross-sectional view taken along line AA ′ of FIG. 9.

<Description of the symbols for the main parts of the drawings>

400: first substrate 420: common electrode pad

422: drain electrode 430: first connection electrode

450: cell gap holding means 460: second connection electrode

500: second substrate 501: auxiliary electrode

502: first electrode 504: organic light emitting layer

506: second electrode

The organic light emitting device according to the first aspect of the present invention for achieving the object as described above is defined as a light emitting portion consisting of a plurality of pixels and a peripheral portion around the light emitting portion, it is bonded by a sealant pattern coated on the peripheral portion A first substrate and a second substrate; A switching element configured to correspond to each pixel of the first substrate and a driving element connected thereto; A common electrode pad configured at one peripheral portion of the first substrate and configured to receive and output a common signal; A first connection electrode connected to the driving element; An organic layer pattern disposed on the common electrode pad; A second connection electrode formed along the organic layer pattern and positioned in contact with the common electrode pad; A first electrode formed on one surface of the first substrate facing the first substrate and having one side in contact with the second connection electrode; An organic light emitting layer formed under the first electrode; A lower electrode of the organic light emitting layer may include a second electrode independently configured to correspond to each pixel and in contact with the first connection electrode.

The switching element and the driving element are thin film transistors including a gate electrode, an active layer, a source electrode, and a drain electrode.

When n + impurities are doped on the surface of the active layer, the first electrode is an anode electrode for injecting holes into the light emitting layer, and the second electrode is a cathode electrode for injecting electrons into the light emitting layer. to be.

In this case, the first electrode is formed of indium tin oxide (ITO), and the second electrode is formed of one selected from aluminum (Al), calcium (Ca), and magnesium (Mg), or lithium fluorine / aluminum ( LIF / Al).

On the other hand, when p + impurities are doped on the surface of the active layer, the first electrode is a cathode electrode for injecting electrons into the light emitting layer, and the second electrode is an anode electrode for injecting holes in the light emitting layer. electrode; and the first electrode is formed of one selected from aluminum (Al), calcium (Ca), and magnesium (Mg), or is formed of a double metal layer of lithium fluorine / aluminum (LIF / Al), and the second electrode. Silver is formed from indium tin oxide (ITO).

The organic light emitting device according to the second aspect of the present invention includes a first substrate and a second substrate defined by a light emitting portion composed of a plurality of pixels and a peripheral portion around the light emitting portion and bonded by a sealant pattern coated on the peripheral portion; A switching element configured to correspond to each pixel of the first substrate and a driving element connected thereto; A common electrode pad configured at one side periphery of the first substrate and configured to receive and output a common signal; A plurality of gap holding means formed in a columnar shape on an upper portion of a first substrate corresponding to a region between the sealant pattern and the light emitting portion; A first connection electrode connected to the driving element; A second connection electrode formed along the distance gap holding means positioned on the common electrode pad, the second connection electrode being positioned corresponding to the common electrode pad and in contact therewith; A first electrode formed on one surface of the first substrate facing the first substrate and having one side in contact with the second connection electrode; An organic light emitting layer formed under the first electrode; A lower electrode of the organic light emitting layer may include a second electrode independently configured to correspond to each pixel and in contact with the first connection electrode.

In the above-described configuration, the holding means may be composed of a plurality of patterns.

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.

First Embodiment

According to the present invention, in the configuration of the organic light emitting device in which the thin film transistor array unit is formed on the first substrate and the organic light emitting unit is formed on the second substrate, the first electrode is connected to connect the drain electrode of the first substrate and the second electrode of the organic light emitting unit. And forming a second connection electrode contacting the first electrode of the organic light emitting unit and the common electrode pad formed on the outer side of the lower substrate, wherein the organic layer pattern having a predetermined height corresponding to the second connection electrode is formed. In this case, the contact characteristics between the second connection electrode and the first electrode may be improved.

5 is a plan view showing a schematic configuration of an organic light emitting device according to the present invention.

The organic light emitting device 99 according to the present invention includes a first substrate 100 including a thin film transistor array and a second substrate 200 including an organic light emitting part (including a first electrode, an organic light emitting layer, and a second electrode). It is manufactured by bonding in a vacuum state through the sealant (300).

In this case, a data pad 102 is formed at one outer side of the first substrate 100, and a gate pad 104 is formed at the other outer side of the substrate 100 which is not parallel to the first substrate 100, and the gate pad 104 is formed. The power supply pad (the function of applying V _DD ) 106 is formed on the outside of the substrate 100 in a direction parallel to the substrate 100.

Each pad described above is configured to contact the ends of the gate line (not shown), the data line (not shown), and the power line (not shown) described above with reference to FIG. 2.

Although not shown, an array portion including a thin film transistor (switching thin film transistor and a driving thin film transistor) for driving a plurality of pixels (not shown) and the gate wiring, data wiring, and power wiring connected thereto is formed in the substrate 100. .

A common electrode pad 120 through which a common voltage flows is formed on one side of the substrate 100 in a direction parallel to the data pad 102.

A first connection electrode (not shown) connected to a thin film transistor (driving thin film transistor) (not shown) is formed for each pixel, and a predetermined upper portion of the common electrode pad 108 is formed inside the sealant pattern 300. An organic layer pattern 140 having a height is formed, and a second connection electrode 150 in contact with the common electrode pad 140 is formed on the organic layer pattern 140.

Although not shown in the second substrate 300, a first electrode (common electrode) formed on the entire surface of the substrate 300, a light emitting layer formed on the upper portion of the first electrode, and an upper portion of the light emitting layer and corresponding to each pixel. To form an independently configured second electrode.

In the above configuration, the second electrode (not shown) is connected to the first connection electrode (not shown), and the first electrode (not shown) is connected to the second connection electrode 150 to generate a common voltage. It is configured to be authorized.

In the above-described configuration, in particular, the organic light emitting element is driven because the organic film pattern 140 is further formed below the second connection electrode 150, thereby eliminating contact defects of the second connection electrode 150. It is possible to prevent defects that do not occur.

Hereinafter, a cross-sectional configuration of an organic light emitting diode according to a first exemplary embodiment of the present invention will be described in detail.

6 is a schematic cross-sectional view of a structure of an organic light emitting diode according to a first exemplary embodiment of the present invention.

As shown, the organic light emitting device 99 of the dual plate structure according to the present invention includes the first substrate 100 and the second substrate 300 bonded through the sealant 200.

The first substrate 200 and the second substrate 300 are divided into a light emitting portion L and a peripheral portion S, and the light emitting portion L is composed of a plurality of pixels P. (Configuration of the first substrate For details, see the conventional configuration of FIG. 2.)

One surface of the first substrate 100 includes a switching element (not shown) and a driving element T _D connected thereto for each pixel P.

The common electrode pad 120 is formed under the sealant pattern 300 on one side peripheral portion S of the substrate 100.

In the above-described configuration of the first substrate 100, the first connection electrode 130 connected to the drain electrode 122 of the driving device T _D is formed, and the peripheral portion S of the first substrate 100 is formed. The second connection electrode 150 is formed to form the organic layer 140 at a predetermined height in correspondence with the common electrode pad 120 formed at the second electrode, and contacts the common electrode pad 120 at the surface of the organic layer 140. Configure

A first electrode (common electrode) 202 is formed on the front surface of the second substrate 200 facing the first substrate 100 configured as described above, and light emission characteristics are formed on the first electrode 202. The organic light emitting layer 204 for emitting red, green, and blue light is formed in correspondence to the pixel P by using an organic material (polymer or low molecule).

A plurality of second electrodes 206 independently formed for each pixel P are formed on the organic emission layer 204.

In this case, when the first electrode 202 is an anode and the second electrode 206 is a cathode, a hole transport layer HTL is disposed between the first electrode 202 and the organic light emitting layer 204. (Not shown), and an electron transport layer (ETL) is further formed between the second electrode 206 and the organic light emitting layer 204.

In the above-described configuration, when the driving element (driving thin film transistor) formed on the first substrate 100 is n-type, in the case of a p-type thin film transistor, the first electrode is a cathode electrode and the second electrode is an anode It becomes an electrode.

In general, the cathode of the organic light emitting part is formed of one selected from aluminum (Al), calcium (Ca), and magnesium (Mg), or lithium fluorine / aluminum (LIF / Al) is formed of a double metal layer.

Indium tin oxide (ITO) is used as an anode of the organic light emitting part.

The first electrode 202 of the second substrate 200 is formed to expose a portion corresponding to the common electrode pad 120.

In this case, the resistance of the first electrode 201 is lowered by partially configuring the auxiliary electrode 201 having a lower resistance than the first electrode 202 between the first electrode 202 and the substrate 200.

When the first substrate 100 and the second substrate 200 configured as described above are bonded to each other, the first connection electrode 130 is connected to the second electrode (cathode electrode) 206 and the second substrate. The connection electrode 150 is in contact with the exposed first electrode 202.

An organic light emitting diode having a dual plate structure according to the present invention may be manufactured in the above-described configuration, and the above-described configuration may be performed by forming the organic layer pattern 140 under the second connection electrode 150. The second connection electrode 150 is formed at the same height as the first connection electrode 120 to prevent a poor contact between the second connection electrode 150 and the first electrode 202. It features.

In this case, the organic layer pattern 140 may be integrally formed or divided into a plurality.

The organic light emitting device having the dual plate structure according to the first embodiment of the present invention has the advantage that the aperture ratio can be realized to the maximum without being limited by the aperture ratio in designing the lower thin film transistor array unit because it is an upper emission type.

In addition, since the thin film transistor array unit and the organic light emitting unit are formed separately from the same substrate, there are fewer couples to be considered in the process, thereby improving the process yield.

Hereinafter, modifications of the first embodiment will be described through the second embodiment.

Second Embodiment

The second embodiment of the present invention is characterized in that a plurality of organic film patterns having a predetermined height are formed in a region between the light emitting portion of the organic light emitting element and the sealant pattern.

7 is a plan view schematically illustrating a configuration of an organic light emitting diode according to a second exemplary embodiment of the present invention.

As shown, the organic light emitting diode 399 according to the second exemplary embodiment of the present invention includes a first substrate 400 including a thin film transistor array and an organic light emitting part (first electrode, organic light emitting layer, and second electrode). ) Is fabricated by attaching the second substrate 500 configured in the vacuum state through the sealant 600.

The bonded organic light emitting diode 399 is defined as a light emitting portion L and a peripheral portion S. A data pad 402 is formed at one outer side of the first substrate 400, and the substrate is not parallel thereto. A gate pad 404 is formed at the outer side of the other side of 100, and a power supply pad (V _DD ) 406 is formed at the outer side of the gate pad 404 in a direction parallel to the gate pad 404.

Each pad described above is configured to contact the ends of the gate line (not shown), the data line (not shown), and the power line (not shown) described above with reference to FIG. 2.

Although not shown, the light emitting part L of the substrate 400 includes a thin film transistor (switching thin film transistor and a driving thin film transistor) for driving a plurality of pixels (not shown), the gate wiring, data wiring, and power wiring connected thereto. An array portion is formed.

A common electrode pad 420 through which a common voltage flows is formed on one side of the substrate 400 in a direction parallel to the data pad 404.

Each pixel forms a first connection electrode (not shown) connected to a thin film transistor (driving thin film transistor) (not shown), and has a columnar shape in an area K between the sealant pattern 600 and the light emitting part S. FIG. A plurality of organic film patterns 450 is formed.

Of course, the organic layer pattern 450 is formed on the portion of the common electrode pad 420 positioned between the sealant pattern 600 and the light emitting unit L, and the upper portion of the organic layer pattern 450 is formed. The second connection electrode 460 is formed in contact with the common electrode pad 420.

Although not shown in the above configuration, a first electrode in contact with the common electrode pad 420 by the second connection electrode 460 on one surface of the first substrate 500 facing the first substrate 400. (Anode electrode serving as a common electrode) (not shown), a light emitting layer (not shown) below the first electrode (not shown), and a second electrode (not shown) below the light emitting layer.

The configuration of the above organic light emitting device will be described below with reference to the drawings.

FIG. 8 is a cross-sectional view schematically illustrating a configuration of an organic light emitting diode according to a second exemplary embodiment of the present invention taken along the line VI-VI ′ of FIG. 7.

As illustrated, the organic light emitting diode 399 having a dual plate structure according to the present invention includes a first substrate (thin film transistor array substrate) 400 and a second substrate (organic light emitting substrate) bonded through the sealant 600. It consists of 500.

The first substrate 400 and the second substrate 500 are divided into a light emitting portion L and a peripheral portion S, and the light emitting portion L is composed of a plurality of pixels P. (The thin film of the first substrate. For the structure of the transistor array unit, refer to the structure of FIG. 2 in the related art.)

On one surface of the first substrate 400, a switching element (not shown) and a driving element T _D connected thereto are formed for each pixel P. Referring to FIG.

A common electrode pad 420 extending below the sealant pattern 600 is formed in one peripheral portion S of the substrate 400.

In the above-described configuration of the first substrate 400, before forming the first connection electrode 430 connected to the drain electrode 422 of the driving element T _D , the sealant pattern 600 and the light emitting unit may be formed. A plurality of organic film patterns 450 having a predetermined height are formed corresponding to the interregion K of (L).

The organic layer pattern 450 is configured around the light emitting unit of the organic light emitting diode as in the configuration of FIG. 7 described above.

After forming the organic layer pattern 450, a first connection electrode 430 is formed to contact the drain electrode 422 of the thin film transistor T _D , and is in contact with the common electrode pad 420. A second connection electrode 460 is formed along the organic layer pattern 450.

A first electrode (anode electrode, an anode electrode 502) is formed on one surface of the second substrate 500 facing the first substrate 400, red and green and the upper portion of the first electrode 502 The organic light emitting layer 504 in which blue emits light is formed in a predetermined order corresponding to the plurality of pixels.

A second electrode cathode (cathode electrode) 506 is formed on the organic light emitting layer 504 independently corresponding to each pixel P.

The first electrode 502 (anode electrode) is formed of indium tin oxide (ITO) having a large work function, and the second electrode 506 (cathode electrode) is formed of aluminum having a small work function ( Al), calcium (Ca) and magnesium (Mg) is selected from one or formed of a double metal layer of lithium fluorine / aluminum (LIF / Al).

In the above-described configuration, since the first electrode, which is the ITO electrode, has a high resistance, an auxiliary electrode 501 is further disposed between the second substrate 500 and the first electrode 502 in order to improve operating characteristics of the organic light emitting unit. In forming the auxiliary electrode 501, chromium (Cr), molybdenum (Mo), aluminum (Al), aluminum alloy (AlNd), or the like may be used.

When the first substrate 400 and the second substrate 500 configured as described above are bonded to each other, the first connection electrode 430 contacts the second electrode 506 and the common electrode pad 420. The second connection electrode 430 is in contact with the first electrode 502.

A characteristic of the organic light emitting diode according to the second embodiment is to form a plurality of organic film patterns 460 in the region K between the light emitting portion L and the sealant pattern 600,

Due to the gap between the light emitting part and the peripheral part, it is possible to prevent the lifting phenomenon in a specific region, thereby preventing the poor contact between the first connection electrode and the second electrode (cathode electrode).

The shape of the organic film of FIG. 7 or 8 is one example, and may be formed as shown in FIGS. 9 and 10 below.

FIG. 9 is a plan view showing a partial configuration of an organic plate pattern (distance maintaining means) according to another embodiment of the present invention, and FIG. 10 is a cross-sectional view taken along line AA ′ of FIG. 9.

As shown in FIGS. 9 and 10, the organic film pattern 450 may be formed of two or more patterns unlike the configuration of FIG. 7, and each pattern is preferably trapezoidal in cross section. Consists of.

At this time, as the pattern is divided into a plurality, the pressure can be evenly distributed during the bonding process in a vacuum state, there is an advantage that can lower the probability of occurrence of poor bonding.

As described above, the organic layer pattern may be composed of two or more in the horizontal direction, and the surface shape of the columnar organic layer pattern may also be variously modified.

The organic light emitting device according to the present invention has the following effects.

First, since the upper emission type is not affected by the shape of the lower array pattern, it is possible to secure a high aperture ratio.

Second, since the organic light emitting layer is not configured on the thin film transistor array pattern but separately configured, the organic light emitting layer does not have to consider the effects on the thin film transistor in the process of forming the organic light emitting layer, thereby improving yield. .

Third, by forming a plurality of organic film patterns between the light emitting portion and the sealant region of the light emitting device to maintain the gap of the light emitting device, during the process of bonding the first substrate and the second substrate constituting the light emitting device in a vacuum atmosphere The lifting phenomenon caused by the gap between the light emitting part and the peripheral part can be prevented. This prevention of lifting phenomenon has an effect of improving the yield of the product to solve the malfunction of the organic light emitting unit.

Fourth, the organic layer pattern is positioned below the second connection electrode between the first electrode formed on the upper substrate of the organic light emitting diode and the common electrode pad formed on the lower substrate, thereby the second connection electrode and the first electrode. There is an effect of improving the contact characteristics with.

Claims (21)

A first substrate and a second substrate defined by a light emitting portion composed of a plurality of pixels and a peripheral portion around the light emitting portion, and bonded by a sealant pattern coated on the peripheral portion; A switching element configured to correspond to each pixel of the first substrate and a driving element connected thereto; A common electrode pad configured at one peripheral portion of the first substrate and configured to receive and output a common signal; A first connection electrode connected to the driving element; An organic layer pattern disposed on the common electrode pad; A second connection electrode formed along the organic layer pattern and positioned in contact with the common electrode pad; A first electrode formed on one surface of the first substrate facing the first substrate and having one side in contact with the second connection electrode; An organic light emitting layer formed under the first electrode; A second electrode independently formed in the lower portion of the organic emission layer corresponding to each pixel and in contact with the first connection electrode; An organic light emitting device comprising a. The method of claim 1, The switching element and the driving element is a thin film transistor including a gate electrode, an active layer, a source electrode and a drain electrode. The method of claim 1, And an n + impurity doped on the surface of the active layer. The method of claim 3, wherein When n + impurities are doped on the surface of the active layer, the first electrode is an anode electrode for injecting holes into the light emitting layer, and the second electrode is a cathode electrode for injecting electrons into the light emitting layer. Phosphorus organic electroluminescent device. The method of claim 4, wherein The first electrode is formed of indium tin oxide (ITO), and the second electrode is formed of one selected from aluminum (Al), calcium (Ca), and magnesium (Mg), or lithium fluorine / aluminum (LIF / An organic light emitting diode formed of a double metal layer of Al). The method of claim 1, An organic light emitting device in which p + impurities are doped to the surface of the active layer. The method of claim 6, When p + impurities are doped on the surface of the active layer, the first electrode is a cathode electrode for injecting electrons into the light emitting layer, and the second electrode is an anode electrode for injecting holes into the light emitting layer. Phosphorus organic electroluminescent device. The method of claim 7, wherein The first electrode may be formed of one selected from aluminum (Al), calcium (Ca), and magnesium (Mg), or a double metal layer of lithium fluorine / aluminum (LIF / Al), and the second electrode may be formed of indium tin. An organic light emitting device formed of oxide (ITO). The method of claim 1, And an auxiliary electrode having a lower resistance than the first electrode between the first substrate and the first electrode. A first substrate and a second substrate defined by a light emitting portion composed of a plurality of pixels and a peripheral portion around the light emitting portion, and bonded by a sealant pattern coated on the peripheral portion; A switching element configured to correspond to each pixel of the first substrate and a driving element connected thereto; A common electrode pad configured at one side periphery of the first substrate and configured to receive and output a common signal; A plurality of gap holding means formed in a columnar shape on the first substrate; A first connection electrode connected to the driving element; It is located corresponding to the common electrode pad and in contact with the A second connection electrode formed along the distance gap holding means; A first electrode formed on one surface of the first substrate facing the first substrate and having one side in contact with the second connection electrode; An organic light emitting layer formed under the first electrode; A second electrode independently formed in the lower portion of the organic emission layer corresponding to each pixel and in contact with the first connection electrode; An organic light emitting device comprising a. The method of claim 10, The switching element and the driving element is a thin film transistor including a gate electrode, an active layer, a source electrode and a drain electrode. The method of claim 10, And an n + impurity doped on the surface of the active layer. The method of claim 12, When n + impurities are doped on the surface of the active layer, the first electrode is an anode electrode for injecting holes into the light emitting layer, and the second electrode is a cathode electrode for injecting electrons into the light emitting layer. Phosphorus organic electroluminescent device. The method of claim 13, The first electrode is formed of indium tin oxide (ITO), and the second electrode is formed of one selected from aluminum (Al), calcium (Ca), and magnesium (Mg), or lithium fluorine / aluminum (LIF / An organic light emitting diode formed of a double metal layer of Al). The method of claim 10, An organic light emitting device in which p + impurities are doped to the surface of the active layer. The method of claim 15, When p + impurities are doped on the surface of the active layer, the first electrode is a cathode electrode for injecting electrons into the light emitting layer, and the second electrode is an anode electrode for injecting holes into the light emitting layer. Phosphorus organic electroluminescent device. The method of claim 16, The first electrode may be formed of one selected from aluminum (Al), calcium (Ca), and magnesium (Mg), or a double metal layer of lithium fluorine / aluminum (LIF / Al), and the second electrode may be formed of indium tin. An organic light emitting device formed of oxide (ITO). The method of claim 10, And an auxiliary electrode having a lower resistance than the first electrode between the first substrate and the first electrode. The method of claim 10, The gap holding means is an organic light emitting device consisting of a plurality of patterns. The method of claim 10, The distance gap maintaining means is located in correspondence with a region between the sealant pattern and the light emitting portion. The method of claim 20, The distance gap maintaining means is disposed between the second connection electrode and the common electrode pad.