KR20040081884A - Apparatus for depositing an atomic layer - Google Patents

Abstract

PURPOSE: An atomic deposition system is provided to reduce layout by connecting the first and the second atomic layer deposition modules to a couple of bubblers and an ozone generator. CONSTITUTION: The first and the second atomic layer deposition modules(110,120) are used for atomic layers on each surface of plural substrates. The first reaction gas supply parts are respectively connected to the first and the second atomic layer deposition modules in order to supply the first reaction gas to the first and the second atomic layer deposition modules. The second reaction gas supply parts are respectively connected to the first and the second atomic layer deposition modules in order to supply the second reaction gas to the first and the second atomic layer deposition modules.

Description

Apparatus for depositing an atomic layer

The present invention relates to an atomic layer deposition apparatus. More particularly, the present invention relates to an apparatus for depositing an atomic layer thin film on a semiconductor substrate by supplying a reaction gas in a pulse manner.

In general, a semiconductor device includes a Fab process for forming an electrical circuit on a silicon wafer used as a semiconductor substrate, a process for inspecting electrical characteristics of the semiconductor devices formed in the fab process, and the semiconductor devices are epoxy It is manufactured through a package assembly process for encapsulating and individualizing with resin.

The fab process includes a deposition process for forming a film on a semiconductor substrate, a chemical mechanical polishing process for planarizing the film, a photolithography process for forming a photoresist pattern on the film, and the photoresist pattern. An etching process for forming the film into a pattern having electrical characteristics, an ion implantation process for implanting specific ions into a predetermined region of the semiconductor substrate, a cleaning process for removing impurities on the semiconductor substrate, and the film or pattern Inspection process for inspecting the surface of the formed semiconductor substrate;

The film deposition process is a process of forming various films on a semiconductor substrate, and there are a chemical vapor deposition method, a physical vapor deposition method, and an atomic layer deposition method. Recently, the atomic layer deposition method has attracted attention as a method of forming fine patterns on the semiconductor substrate in accordance with the improvement of the integration degree of the semiconductor substrate. The atomic layer deposition method is a method of depositing a desired film in atomic layer units by supplying a reaction gas on a semiconductor substrate in a pulsed manner, and can perform the deposition process at a lower temperature than a conventional thin film formation method, and has excellent step coverage. There is an advantage.

An example of such an atomic layer deposition process is disclosed in US Pat. No. 6,124,158. According to US Pat. No. 6,124,158, a first reactive material is introduced to react on the surface of a semiconductor substrate to form a monolayer to which reactive species are bound. Then, a second reactant is introduced to react with the semiconductor substrate to form a desired thin film. After each of these steps, the reaction chamber is purged with an inert gas to prevent reaction outside the surface. In general, the provision of the reactant and inert gas is made under the same pressure for reasons such as maintenance of the manufacturing apparatus.

However, conventional atomic layer deposition techniques also have the disadvantage of low productivity for reasons such as relatively low growth rates of atomic layers. In addition, since the reaction space of conventional atomic layer deposition reactors such as a traveling wave type reactor and the like is very narrowly designed, the purification volume for purification of reaction by-products and the like is reduced. In addition, conventional atomic layer deposition reactors process one or two wafers. Thus, conventional atomic layer deposition techniques suffer from deficiencies that are difficult to put into practice and commercial applications for producing many products.

Recently, several attempts have been made to improve the productivity of the atomic layer deposition process. One attempt is disclosed in US Pat. No. 6,042,652. According to US Pat. No. 6,042,652, an atomic layer deposition reactor comprises a divided space having a plurality of modules or a plurality of reaction spaces (stages), ie a plurality of assembly modules. For example, the lower module is located below the upper module, thereby creating one reaction space between the modules and accommodating one semiconductor substrate in each reaction space.

However, since each reaction space (stage) is narrow and divided from each other, one substrate is introduced into one reaction space (stage). Therefore, it is not easy to use a wafer automatic transfer device for loading / unloading a plurality of wafers. As a result, it takes quite a lot of time to load / unload wafers. In addition, loading and processing are not sufficient for a large number of wafers.

As an example for improving the above problems, Korean Patent Laid-Open Publication No. 2002-91743 discloses a vertical type reactor similar to a vertical furnace used in a conventional chemical vapor deposition process. Since the vertical reactor loads a plurality of substrates at the same time by using a boat, it can solve the above problems.

In the case of applying the above-described batch type atomic layer deposition apparatus to a process of forming an aluminum oxide (Al ₂ O ₃ ) thin film on a semiconductor substrate, the atomic layer deposition apparatus includes the aluminum oxide thin film The first and second reaction gas supply parts for supplying trimethyl aluminum (TMA, Al (CH ₃ ) ₃ ) gas and ozone (O ₃ ) gas for forming a gas are respectively connected.

In recent years, in constructing a mass production facility of a semiconductor device, the layout of a manufacturing line greatly affects the productivity and mass productivity of the semiconductor device. However, when the first and second reactive gas supply units are connected to the respective atomic layer deposition apparatuses as described above, the installation space is restricted, and this causes a decrease in productivity and mass productivity of the semiconductor device.

An object of the present invention for solving the above problems is to provide an atomic layer deposition apparatus that can improve the space use efficiency of the installation space in the atomic layer deposition apparatus for forming an atomic layer thin film on a semiconductor substrate. .

1 is a schematic configuration diagram illustrating an atomic layer deposition apparatus according to an embodiment of the present invention.

FIG. 2 is a schematic configuration diagram illustrating an example in which the atomic layer deposition apparatuses illustrated in FIG. 1 are installed.

FIG. 3 is a schematic cross-sectional view for describing a vertical reactor applied to the atomic layer deposition apparatus shown in FIG. 1.

Explanation of symbols on the main parts of the drawings

100: atomic layer deposition apparatus 110, 120: atomic layer deposition module

112, 122: cassette units 114, 124: reactor

116, 126: bubbler 118: ion generator

130, 132: working space 140: 142: control unit

The present invention for achieving the above object, the first and second atomic layer deposition module for forming an atomic layer thin film on the surface of a plurality of substrates, and the first and second atomic layer deposition module, respectively, A pair of first reaction gas supply units for supplying a first reaction gas for forming an atomic layer thin film to the first and second atomic layer deposition modules, and the first and second atomic layer deposition modules, And a second reaction gas supply part for supplying a second reaction gas for forming the atomic layer thin film.

As an example of the present invention, the atomic layer thin film includes an aluminum oxide thin film, and the first and second reaction gases are trimethyl aluminum (TMA, Al (CH ₃ ) ₃ ) gas and ozone (O 3) gas, respectively. It includes. The second reactive gas supply unit includes an ozonizer, and the first and second atomic layer deposition modules are connected to both sides of the ozone generator, respectively.

The first and second atomic layer deposition modules share the ozone generator with an ozone generator in between, thereby reducing the layout of the atomic layer deposition apparatus. Therefore, the installation space of the atomic layer deposition apparatus in the manufacturing line of the semiconductor device is reduced, thereby improving the productivity and mass productivity of the semiconductor device.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a schematic diagram illustrating an atomic layer deposition apparatus according to an exemplary embodiment of the present invention, and FIG. 2 is a schematic diagram illustrating an example of installing the atomic layer deposition apparatus illustrated in FIG. 1. to be.

Referring to FIG. 1, the illustrated atomic layer deposition apparatus 100 includes a first atomic layer deposition module 110 and a second atom for forming an aluminum oxide thin film on a plurality of semiconductor substrates using an atomic layer deposition method. Has a layer deposition module 120.

The first and second atomic layer deposition modules 110 and 120 have first and second cassette units 112 and 122, respectively, for receiving a plurality of semiconductor substrates. Each cassette unit 112, 122 can be configured in a variety of ways. For example, the cassette for accommodating about 25 semiconductor substrates may be configured in a multi-stage stage format that can be stacked in a vertical or horizontal direction.

In addition, the first and second atomic layer deposition modules 110 and 120 include first and second vertical reactors 114 and 124 for simultaneously forming aluminum oxide thin films for a plurality of semiconductor substrates. However, various forms such as a horizontal reactor may be included without departing from the gist of the present invention.

As shown, a pair of first reaction gas supplies for supplying trimethyl aluminum gas are connected to the first and second vertical reactors 114 and 124, respectively. Conventional bubblers 116 and 126 may be used as the pair of first reaction gas supply units, and nitrogen or argon gas may be used as a carrier gas for generating trimethyl aluminum gas. In addition, the nitrogen or argon gas may be used as a purge gas for purifying the interior of the first and second vertical reactors 114 and 124.

The first and second vertical reactors 114 and 124 are connected to the first and second cassette units 112 and 122, respectively, and supply ozone gas between the first and second cassette units 112 and 122, respectively. The second reaction gas supply unit is connected. Here, a conventional ozone generator 118 may be used as the second reaction gas supply unit. The ozone generator 118 is connected to the first cassette unit 112 in a direction perpendicular to the direction in which the first vertical reactor 114 and the first cassette unit 112 are connected, and the second vertical reactor 124. And the second cassette unit 122 is connected to the ozone generator 118 opposite the first vertical reactor 114 and the first cassette unit 112. That is, the first and second atomic layer deposition modules 110 and 120 have a configuration in which one ozone generator 118 is shared. Thus, the first and second atomic layer deposition modules 110 and 120 have a configuration opposite to each other.

As described above, by sharing the ozone generator 118 with the first and second atomic layer deposition modules 110 and 120, the overall layout of the atomic layer deposition apparatus 100 may be reduced. As shown in FIG. 2, by arranging the plurality of atomic layer deposition apparatuses 110 in a facility space such as a clean room, the facility space of the atomic layer deposition device 100 is reduced, and thus the productivity and mass productivity of the semiconductor device are reduced. Can be improved.

On the other hand, the first and second vertical reactors (114, 124) with respect to the first and second cassette units (112, 122) against the periodic preventive maintenance and repair of the atomic layer deposition apparatus 100 The first and second working spaces 130 and 132 are disposed, respectively, and the atomic layer facing the first and second atomic layer deposition modules 110 and 120 around the first and second working spaces 130 and 132. First and second control units 140 and 142 for controlling the operation of the deposition apparatus 100 and applying power required for the atomic layer deposition apparatus 100 are disposed, respectively.

In addition, the above-described first and second atomic layer deposition modules 110 and 120 further include power lines and gas lines connecting the components to each other, and further include various control switches and control valves capable of opening and closing them. Include.

FIG. 3 is a schematic cross-sectional view for describing a vertical reactor applied to the atomic layer deposition apparatus shown in FIG. 1.

Referring to Figure 3, the vertical reactor 300 shown is similar in shape to the longitudinal furnace of a conventional chemical vapor deposition apparatus. The vertical reactor 300 loads the reaction chamber 310 and the plurality of semiconductor substrates 10 to provide a reaction space, and loads the plurality of semiconductor substrates 10 into the reaction chamber 310 and from the reaction chamber. Boat 320 for unloading.

About 120 semiconductor substrates 10 are loaded in the boat 320, and the boat 320 moves upward from the bottom of the reaction chamber 310 to be coupled with the reaction chamber 310 to form a plurality of semiconductor substrates 10. ) Are loaded into the reaction chamber 310. On the contrary, the semiconductor substrate 10 is unloaded from the reaction chamber 310 by moving downward with respect to the reaction chamber 310. The plurality of semiconductor substrates 10 loaded on the boat 320 are loaded so that the process surface for forming the atomic layer thin film is at the top. Here, additional members such as a vertical heater (not shown) for heating the inside of the reaction chamber 310 may be further included.

The boat 320 may be a typical boat formed of quartz or other conventional materials. The boat 320 has a plurality of grooves for loading the plurality of semiconductor substrates 10 therein, respectively.

The first and second reaction gases are introduced into the reaction chamber 310 through an inlet 312 connected to one side of the reaction chamber 310, flow in accordance with the arrows shown, and through the exhaust line 314. Ejected from 310. The exhaust line 314 is connected with a pressure control valve 316 and a vacuum pump 318 for controlling the internal pressure of the reaction chamber 310. However, within the scope not departing from the spirit of the present invention, a reactor having a shape and configuration different from that of the vertical reactor shown may be applied to the atomic layer deposition apparatus of the present invention.

A process of depositing an aluminum oxide thin film on the surface of a plurality of semiconductor substrates using the atomic layer deposition apparatus as described above is as follows.

First, the plurality of semiconductor substrates 10 are loaded into the boat 320 and then the boat 320 is raised to load the plurality of semiconductor substrates 10 into the reaction chamber 310.

Subsequently, the inside of the reaction chamber 310 is formed at a predetermined reaction temperature, and trimethyl aluminum (TMA, Al (CH ₃ ) ₃ ) gas is supplied to the inside of the reaction chamber 310 through the introduction part 312. Trimethyl aluminum gas is formed in a conventional bubbling manner, and is supplied to the reaction chamber 310 using nitrogen or argon gas as a carrier gas. The tri methyl aluminum gas supplied to the reaction chamber 310 chemically adsorbs tri methyl aluminum on the upper surface of the semiconductor substrates 10.

Nitrogen gas is supplied to the first purge gas and a vacuum pump 318 is operated to remove trimethyl aluminum physically adsorbed on the surfaces of the semiconductor substrates 10 from the reaction chamber 310.

An ozone gas is supplied onto the semiconductor substrates 10 on which the trimethyl aluminum single atomic layer is formed to form an aluminum oxide thin film on the semiconductor substrates 10.

Nitrogen gas is supplied to the second purge gas to remove reaction by-products to form a single atomic layer aluminum oxide thin film on the semiconductor substrates 10.

As described above, the process of repeatedly supplying the reaction gas in a pulsed manner to form a single atomic layer aluminum oxide thin film may form an aluminum oxide thin film having a desired thickness.

According to the present invention as described above, each of the first and second atomic layer deposition modules for performing an atomic layer deposition process for a plurality of semiconductor substrates are each connected with a pair of bubblers for supplying trimethyl aluminum, respectively That is, the first and second atomic layer deposition modules share the ozone generator with each other, thereby reducing the layout of the atomic layer deposition apparatus. Therefore, efficient use of the manufacturing facility space of the semiconductor device is enabled, thereby improving the productivity and mass productivity of the semiconductor device.

Although described above with reference to a preferred embodiment of the present invention, those skilled in the art will be variously modified and changed within the scope of the invention without departing from the spirit and scope of the invention described in the claims below I can understand that you can.

Claims (6)

First and second atomic layer deposition modules for forming an atomic layer thin film on surfaces of a plurality of substrates; A pair of first reaction gases connected to the first and second atomic layer deposition modules, respectively, for supplying a first reaction gas for forming the atomic layer thin film to the first and second atomic layer deposition modules, respectively. Supply unit; And And a second reactive gas supply unit connected to the first and second atomic layer deposition modules and configured to supply a second reactive gas for forming the atomic layer thin film. The atomic layer deposition apparatus of claim 1, wherein the atomic layer thin film comprises an aluminum oxide (Al ₂ O ₃ ) thin film. The atomic layer deposition apparatus of claim 1, wherein the first reaction gas comprises trimethyl aluminum (TMA, Al (CH ₃ ) ₃ ) gas. The atomic layer deposition apparatus of claim 1, wherein the second reaction gas comprises an ozone (O 3) gas, and the second reaction gas supply unit comprises an ozone generator. The atomic layer deposition apparatus of claim 4, wherein the first and second atomic layer deposition modules are connected to both sides of the ozone generator, respectively. The plurality of substrates of claim 1, wherein the first and second atomic layer deposition modules comprise a cassette unit for receiving a plurality of substrates and a boat for loading the plurality of substrates. An atomic layer deposition apparatus comprising a vertical reactor for performing the atomic layer deposition process for each.