KR20040077277A - Photoresist composition for liquid crystal displays - Google Patents
Photoresist composition for liquid crystal displays Download PDFInfo
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- KR20040077277A KR20040077277A KR1020030012778A KR20030012778A KR20040077277A KR 20040077277 A KR20040077277 A KR 20040077277A KR 1020030012778 A KR1020030012778 A KR 1020030012778A KR 20030012778 A KR20030012778 A KR 20030012778A KR 20040077277 A KR20040077277 A KR 20040077277A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/085—Photosensitive compositions characterised by adhesion-promoting non-macromolecular additives
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Abstract
Description
본 발명은 LCD용 포토레지스트 조성물에 관한 것으로, 더욱 상세하게는 감도 및 코팅 균일성이 우수하고 원하는 두께의 수직 단면 프로파일을 얻을 수 있는 포토레지스트 조성물에 관한 것이다.The present invention relates to a photoresist composition for LCD, and more particularly to a photoresist composition which is excellent in sensitivity and coating uniformity and obtains a vertical cross-sectional profile of a desired thickness.
LCD 패널의 수요 증가, 특히 TV, 모니터용 패널의 수요 증가는 글래스(Glass)의 대형화와 패널의 고정세화를 필요로 하고 있다. 이러한 추세에 따라 글래스 조건과 부합된 관련 공정 조건에 새로이 만족할 포토레지스트의 개발이 필요하게 되었다. 대형 글래스상에서의 포토(Photo) 공정은 라인 생산량을 결정하는 중요한 공정으로서, 포토레지스트 막의 도포 특성, 얼룩 프리(Free), 현상 콘트라스트, 해상도, 기판과의 접착력, 잔막 특성, 감도 등이 제조되는 미세 회로의 품질에 직접적인 영향을 미치는 중요한 공정이다.Increasing demand for LCD panels, especially for TV and monitor panels, requires large glass sizes and high definition panels. This trend has necessitated the development of photoresists that will be new to the relevant process conditions consistent with the glass conditions. The photo process on the large glass is an important process for determining the line production rate. The photoresist film coating characteristics, stain free, development contrast, resolution, adhesion to the substrate, residual film characteristics, sensitivity, etc. are manufactured. This is an important process that directly affects the quality of the circuit.
특히, 포토 공정 후 형성되는 패턴은 데이터 금속 배선을 만들기 위해 습식 식각(Wet Etch) 공정을 수반하게 되는데, 중간에 건조 식각 공정을 진행하게 되면 기존의 포토레지스트 조성물의 경우는 슬로프(Slope)를 가지고 있어 어택(Attack)을 받게 되고 금속 습식 식각 후에 금속 배선의 크기(Size)가 스펙(Spec.)의 범위를 넘게 되어 원하는 제품 특성에 저해 요소로 작용하는 문제가 있다.In particular, the pattern formed after the photo process is accompanied by a wet etching process to make a data metal wiring. If the dry etching process is performed in the middle, the pattern of the conventional photoresist composition has a slope. There is a problem that the size of the metal wiring exceeds the range of the specification after wet etching, and thus acts as a deterrent to desired product characteristics.
따라서, 본 발명은 상기와 같은 종래 기술에서의 문제점을 해결하기 위하여, 프로파일을 수직으로 세워 건조 식각시의 어택(Attack)을 최소화함으로써 생산 수율을 향상시킬 수 있는 액정표시장치용 포토레지스트 조성물을 제공하는 것을 목적으로 한다.Accordingly, the present invention provides a photoresist composition for a liquid crystal display device which can improve the production yield by minimizing the attack during dry etching by raising the profile vertically in order to solve the problems in the prior art as described above. It aims to do it.
도 1은 종래 비교예 및 본 발명의 실시예의 포토레지스트 조성물에 대하여 단면 프로파일 양상을 비교한 SEM 사진이고,1 is a SEM photograph comparing the cross-sectional profile of the photoresist composition of the conventional comparative example and the embodiment of the present invention,
도 2a 및 2b는 각각 종래 비교예 및 본 발명의 실시예의 포토레지스트 조성물에 대하여 콘트라스트를 비교한 그래프의 결과이고,2A and 2B are results of a graph comparing contrast with respect to the photoresist composition of the conventional comparative example and the inventive example, respectively,
도 3은 종래 비교예 및 본 발명의 실시예의 포토레지스트 조성물에 대하여 온도에 따른 내열성 프로파일을 비교한 SEM 사진이고,3 is a SEM photograph comparing the heat resistance profile according to temperature with respect to the photoresist composition of the conventional comparative example and the embodiment of the present invention,
도 4는 종래 비교예 및 본 발명의 실시예의 포토레지스트 조성물에 대하여 하드베이크 전후의 프로파일을 비교한 결과이고,4 is a result of comparing the profile before and after hard bake with respect to the photoresist composition of the conventional comparative example and the embodiment of the present invention,
도 5는 종래 비교예 및 본 발명의 실시예의 포토레지스트 조성물에 대하여 S/D 4마스크 공정 단계별 프로파일을 비교한 SEM 사진이고,5 is a SEM photograph comparing the S / D 4 mask process step profile with respect to the photoresist composition of the conventional comparative example and the embodiment of the present invention,
도 6은 종래 비교예 및 본 발명의 실시예의 포토레지스트 조성물에 대하여 프로파일을 비교하기 위한 CD 바의 4 포인트를 나타낸 것이다.FIG. 6 shows four points of a CD bar for comparing profiles with respect to the photoresist compositions of the conventional comparative and inventive examples.
상기 목적을 달성하기 위하여, 본 발명은 (a) 분자량 2000 ∼ 12000의 노볼락 수지 10 내지 20 중량%, (b) G-선용 감광제 및 I-선용 감광제가 1:2 내지 2:1의 비율로 블렌딩된 디아지드계 감광성 화합물 10 내지 30 중량%, 및 (c) 잔량의 유기용매를 포함하는 액정표시장치 회로용 포토레지스트 조성물을 제공한다.In order to achieve the above object, the present invention is (a) 10 to 20% by weight of a novolak resin having a molecular weight of 2000 to 12000, (b) a photosensitive agent for G-line and a photosensitive agent for I-line in the ratio of 1: 2 to 2: 1 Provided is a photoresist composition for a liquid crystal display device circuit comprising 10 to 30 wt% of a blended diazide photosensitive compound, and (c) a residual amount of an organic solvent.
이하에서 본 발명을 상세하게 설명한다.Hereinafter, the present invention will be described in detail.
본 발명은 G-선용 및 I-선용 감광제 화합물을 혼합 사용하여 건조식각시의 어택을 최소화하고 감도 및 콘트라스트를 향상시킬 수 있는 포토레지스트 조성물을 제공하는 특징이 있다.The present invention is characterized by providing a photoresist composition capable of minimizing attack during dry etching and improving sensitivity and contrast by using a mixture of G-ray and I-ray photosensitive compounds.
본 발명에서 사용하는 노볼락 수지는 페놀류 화합물과 알데히드류 화합물을 축중합 반응시켜 제조된 것이다. 상기 페놀류로는 페놀, m-크레졸, p-크레졸 등을 단독 또는 2 종 이상 혼합하여 사용할 수 있다. 상기 알데히드류로는 포름알데히드, 벤즈알데히드, 아세트알데히드 등을 사용할 수 있다. 상기 페놀류와 알데히드류와의 축합 반응에는 산성 촉매가 사용될 수 있다.The novolak resin used in the present invention is produced by the polycondensation reaction of a phenol compound and an aldehyde compound. As said phenol, phenol, m-cresol, p-cresol, etc. can be used individually or in mixture of 2 or more types. As the aldehydes, formaldehyde, benzaldehyde, acetaldehyde and the like can be used. An acid catalyst may be used for the condensation reaction of the phenols and aldehydes.
이러한 노볼락 수지의 분자량은 2000 ∼ 12000인 것이 바람직하며, 그 함량은 10 내지 20 중량%로 사용한다. 상기 노볼락 수지의 함량이 10 중량% 미만이면 점도가 너무 낮아 원하는 두께의 도포에 있어서 문제점이 있고, 20 중량%를 초과하면 점도가 너무 높아서 기판의 균일한 코팅이 어려운 문제점이 있다.It is preferable that the molecular weight of such a novolak resin is 2000-12000, and the content is used in 10 to 20weight%. If the content of the novolak resin is less than 10% by weight, the viscosity is too low, there is a problem in the application of the desired thickness, if it exceeds 20% by weight there is a problem that the uniform coating of the substrate is difficult.
특히, 상기 감광성 화합물은 G-선용 감광제 및 I-선용 감광제 화합물을 혼합사용한다. 상기 G-선용 감광제는 디아지드계 화합물로 테트라하이드록시 벤조페논과 2-디아조-1-나프톨-5-술폰산을 에스테르화 반응시켜 제조된 2,3,4,4’-테트라하이드록시벤조페논-1,2-나프토퀴논디아지드-5-설포네이트를 사용하는 것이 바람직하다. 상기 I-선용 감광제는 4,4,4-메틸리덴 트리스 페놀(4,4,4-methylidene tris phenol), 4,4-[(2-히드록시페닐)메틸리덴)]-비스(2,6-디메틸페놀), 4,4-[1-[4-[1-(1,4-히드록시페닐)-1-메틸 에틸] 페닐] 에틸리덴} 비스페놀, 1,1-비스(2,5-디메틸-4-히드록시페닐)아세톤, 및 4,6-비스[1-(4-히드록시페닐)-1-메틸에틸]-1,3-디히드록시벤젠으로 이루어진 군으로부터 선택되는 1 종 또는 2 종 이상의 밸러스트(Ballast)에 2-디아조-1-나프톨-5-술폰산을 에스테르화시킨 감광제를 사용하는 것이 바람직하다.In particular, the photosensitive compound is a mixture of a photosensitive agent for G-rays and a photosensitive compound for I-rays. The G-ray photosensitive agent is a 2,3,4,4'-tetrahydroxybenzophenone prepared by esterifying a tetrahydroxy benzophenone and 2-diazo-1-naphthol-5-sulfonic acid as a diazide compound. Preference is given to using -1,2-naphthoquinonediazide-5-sulfonate. The I-ray photosensitive agent is 4,4,4-methylidene tris phenol (4,4,4-methylidene tris phenol), 4,4-[(2-hydroxyphenyl) methylidene)]-bis (2,6 -Dimethylphenol), 4,4- [1- [4- [1- (1,4-hydroxyphenyl) -1-methyl ethyl] phenyl] ethylidene} bisphenol, 1,1-bis (2,5- 1 type selected from the group consisting of dimethyl-4-hydroxyphenyl) acetone, and 4,6-bis [1- (4-hydroxyphenyl) -1-methylethyl] -1,3-dihydroxybenzene; or Preference is given to using a photosensitizer which has esterified 2-diazo-1-naphthol-5-sulfonic acid in two or more kinds of ballasts.
본 발명은 상기 G-선용 감광제 및 I-선용 감광제를 1:2 내지 2:1의 비율로 블렌딩하여 사용하는 것이 바람직하다. 상기 감광제의 혼합비율이 상기 범위를 벗어나면 원하는 콘트라스트 향상 및 버티컬 프로파일(Vertical Profile)을 얻기가 힘든 문제가 있다. 상기 혼합 감광제의 함량은 10 내지 30 중량%로 사용하는 것이 바람직하며, 감광제의 함량이 10 중량% 미만이면 감도가 너무 빨라 패턴 형성에 불리한 문제가 있고, 30 중량%를 초과하면 감도가 원하는 기준치에 도달하지 못해 노광하는데 시간이 많이 소요되는 문제가 있다.In the present invention, it is preferable to use the G-ray photosensitizer and the I-ray photosensitizer in a ratio of 1: 2 to 2: 1. If the mixing ratio of the photosensitizer is out of the range, there is a problem that it is difficult to obtain a desired contrast enhancement and vertical profile. The content of the mixed photosensitizer is preferably used in an amount of 10 to 30% by weight, and if the content of the photosensitizer is less than 10% by weight, the sensitivity is too fast, thus adversely affecting pattern formation. There is a problem that it takes a long time to expose because it does not reach.
또한, 본 발명의 포토레지스트 조성물은 잔량의 유기용매를 포함한다. 상기 유기용매의 구체적 예를 들면 프로필렌글리콜메틸에테르아세테이트(이하, PGMEA라 칭함), 에틸락테이트(EL), 2-메톡시에틸아세테이트(MMP), 프로필렌글리콜모노메틸에테르(PGME), 3-메톡시부틸아세테이트, 4-부티로락톤 등을 혼합 혹은 단독으로 사용할 수 있다.In addition, the photoresist composition of the present invention contains a residual amount of an organic solvent. Specific examples of the organic solvent include propylene glycol methyl ether acetate (hereinafter referred to as PGMEA), ethyl lactate (EL), 2-methoxyethyl acetate (MMP), propylene glycol monomethyl ether (PGME), and 3-methoxy Toxybutyl acetate, 4-butyrolactone, etc. can be mixed or used independently.
이 밖에, 본 발명의 액정표시장치 회로용 포토레지스트 조성물은 필요에 따라서 착색제, 염료, 찰흔 방지제, 가소제, 접착 촉진제, 계면활성제 등의 첨가제를 추가로 첨가하여 기판에 피복함으로써 개별공정의 특성에 따른 성능향상을 도모할 수도 있다.In addition, the photoresist composition for a liquid crystal display circuit of the present invention may be coated with a substrate by adding additives such as colorants, dyes, anti-scratching agents, plasticizers, adhesion promoters, surfactants, and the like, according to the characteristics of individual processes. It can also improve performance.
이하, 실시예 및 비교예를 통하여 본 발명을 더욱 상세하게 설명한다. 단, 하기 실시예는 본 발명을 예시하기 위한 것으로서 본 발명이 하기 실시예에 의하여 한정되는 것은 아니다.Hereinafter, the present invention will be described in more detail with reference to Examples and Comparative Examples. However, the following examples are for illustrating the present invention and the present invention is not limited by the following examples.
[실시예]EXAMPLE
분자량이 5000인 노볼락 수지 15 중량%를 베이스 폴리머로 하고, 2,3,4,4'-테트라하이드록시벤조페논-1,2-나프토퀴논디아지드-5-설포네이트 및 4,4,4-메틸리덴 트리스 페놀(4,4,4-methylidene tris phenol)의 밸러스트(Ballast)에 2-디아조-1-나프톨-5-술폰산을 에스테르화시킨 감광제를 1:1로 블렌딩한 디아지드계 감광성 화합물 20 중량%, 및 PGMEA 65 중량%를 냉각관과 교반기가 구비된 반응기에 투입하고, 상온에서 40 rpm으로 교반하여 포토레지스트 조성물을 제조하였다.2,3,4,4'-tetrahydroxybenzophenone-1,2-naphthoquinone diazide-5-sulfonate and 4,4, using 15 wt% of a novolak resin having a molecular weight of 5000 as a base polymer. Diazide type which blended 1: 1 the photosensitizer which esterified 2-diazo-1-naphthol-5-sulfonic acid to the ballast of 4-methylidene trisphenol (4,4,4-methylidene tris phenol) 20 wt% of the photosensitive compound and 65 wt% of PGMEA were added to a reactor equipped with a cooling tube and a stirrer, and stirred at 40 rpm at room temperature to prepare a photoresist composition.
상기에서 제조된 포토레지스트 조성물을 0.7T(thickness, 0.7 mm)의 글라스 기판상에 적하하고, 일정한 회전 속도로 회전시킨 후, 상기 기판을 115 ℃에서 90초간 가열 건조하여 1.50 ㎛ 두께의 필름막을 형성하였다. 상기 필름막상에 소정 형상의 마스크를 장착한 다음, 자외선을 조사하였다. 이후, 테트라메틸암모늄 하이드록사이드 2.38% 수용액에 60초 동안 침적시켜, 자외선에 노광된 부분을 제거하여 포토레지스트 패턴을 형성하였다.The photoresist composition prepared above was added dropwise onto a glass substrate of 0.7T (thickness, 0.7 mm), rotated at a constant rotational speed, and then heated and dried at 115 ° C. for 90 seconds to form a film film having a thickness of 1.50 μm. It was. After mounting a mask of a predetermined shape on the film film, it was irradiated with ultraviolet rays. Subsequently, it was immersed in an aqueous 2.38% solution of tetramethylammonium hydroxide for 60 seconds to remove the portion exposed to ultraviolet rays to form a photoresist pattern.
[비교예][Comparative Example]
일반적으로 라인(Line)에서 사용되고 있는 LCD 포토레지스트 조성물을 사용하여 포토레지스트 패턴을 형성하였다.In general, a photoresist pattern was formed using an LCD photoresist composition used in a line.
[실험예]Experimental Example
상기 실시예 및 비교예의 포토레지스트 패턴에 대하여 통상적인 방법으로 코팅균일성(Coating Uniformity), 단면 프로파일, γ 커브(Contrast Graph), 내열성 프로파일을 측정하여 그 결과를 각각 하기 표 1 및 도 1 내지 3에 나타내었다.The coating uniformity, the cross-sectional profile, the γ curve, and the heat resistance profile of the photoresist patterns of the Examples and Comparative Examples were measured in the usual manner, and the results are shown in Tables 1 and 3, respectively. Shown in
상기 표 1에서 보면, 본 발명의 실시예의 경우 I-선 감광제를 함께 사용함으로써 종래 비교예의 LCD PR과 동등 수준 이상의 결과를 나타내었다.In the above Table 1, in the case of the embodiment of the present invention by using the I-ray photosensitive agent, the result was equal to or higher than the LCD PR of the conventional comparative example.
또한, 도 1의 결과에서 알 수 있듯이, 2 내지 5 um까지의 단면 프로파일 양상을 보면 본 발명의 실시예는 종래 비교예와 비교하여 수직에 가까운 프로파일을 얻을 수 있었다.In addition, as can be seen from the results of Figure 1, looking at the cross-sectional profile aspect up to 2 to 5 um embodiment of the present invention was able to obtain a profile close to the vertical compared to the conventional comparative example.
도 2의 결과에서도, 본 발명의 실시예의 경우 비교예와 달리 커브의 기울기를 보면 I-선 감광제의 사용으로 가파른(sharp) 기울기를 가졌으며, 이 결과는 수직에 가까운 프로파일 형성에 영향을 준다.Also in the results of FIG. 2, in the case of the embodiment of the present invention, the slope of the curve, unlike the comparative example, had a sharp slope due to the use of an I-ray photosensitive agent, and this result affects the formation of the profile close to the vertical.
도 3에서 보면, 본 발명의 실시예는 내열성 측면에서도 I-선 감광제의 사용으로 비교예보다 10 내지 15 ℃ 향상된 결과를 보였다.In Figure 3, the embodiment of the present invention showed a 10 to 15 ℃ improved results than the comparative example by the use of I-ray photosensitive agent in terms of heat resistance.
[실험예 2]Experimental Example 2
A. 하드 베이크 전후 프로파일 비교A. Profile comparison before and after hard bake
상기 실시예 및 비교예에 대하여 하드 베이크 전후의 프로파일을 비교하여 그 결과를 하기 표 2 및 도 4에 나타내었다.Profiles before and after the hard bake were compared with respect to the Examples and Comparative Examples, and the results are shown in Table 2 and FIG. 4.
이때, 평가를 위한 위치는 도 6에 나타낸 바와 같다(ADI(After Development Inspection) CD (4 Point CD bar[A~D]) (단위 : um)).At this time, the position for evaluation is as shown in Figure 6 (ADI (After Development Inspection) CD (4 Point CD bar [A ~ D]) (unit: um)).
상기 표 2의 결과에서 보면, 본 발명의 실시예의 경우 비교예와 비교하여 동일 수준의 감도 및 CD 균일성을 나타내었다.In the results of Table 2, the embodiment of the present invention showed the same level of sensitivity and CD uniformity compared to the comparative example.
또한, 도 4에서 프로파일 각도를 비교한 결과, 본 발명의 실시예는 비교예와 달리 I-선 감광제 사용으로 수직에 가까운 프로파일을 얻었고, H/B 처리후에도 여전히 프로파일이 세워진 경향을 나타내었다.In addition, as a result of comparing the profile angles in Figure 4, the embodiment of the present invention obtained a profile close to the vertical using the I-ray photosensitive agent, unlike the comparative example, and showed a tendency that the profile is still standing even after the H / B treatment.
B. S/D 4 마스크 공정 단계별 프로파일 비교(Etch Back 제거)B. Profile Comparison by S / D 4 Mask Process (Etch Back Removal)
상기 실시예 및 비교예에 대하여 하드 베이크 전후의 프로파일을 비교하여 그 결과를 하기 표 3, 4 및 도 5에 나타내었다. 이때, ADI CD 측정은 상기와 같다(4 Point CD bar[A~D]) (단위 : um).Profiles before and after the hard bake were compared with respect to the Examples and Comparative Examples, and the results are shown in Tables 3, 4, and FIG. 5. At this time, ADI CD measurement is as described above (4 Point CD bar [A ~ D]) (unit: um).
상기 표 3, 4 및 도 5의 결과에서 보듯이, 본 발명의 실시예는 비교예보다 CD 균일성이 양호하고, ADI PR 선폭 대비 최종 2차 Cr 식각 후 Cr 선폭 감소양을 비교해 볼 때 향상된 결과를 나타내었다.As shown in the results of Tables 3, 4 and 5, the embodiment of the present invention has better CD uniformity than the comparative example, and improved results when comparing the amount of Cr linewidth reduction after the final second Cr etching to the ADI PR linewidth. Indicated.
이상에서 설명한 바와 같이, 본 발명의 포토레지?? 조성물은 G-선 감광제와 함께 i선 PAC을 사용하여 금속 배선 형성시 원하는 사이즈 스펙(Size Spec.)의 범위를 넘지 않도록 할 수 있으며, 기존에 축소되는 배선 사이즈를 늘일 수 있어 공정 마진 측면에서도 향상되는 결과를 얻을 수 있다. 이로 인해 원하는 제품 특성을 만족시킬 수 있으며 실제 산업 현장에 용이하게 적용할 수 있어 생산성 및 수율 향상에 큰 기대 효과를 나타낼 수 있다.As described above, the photoresist of the present invention ?? The composition can use i-line PAC together with G-ray photoresist to prevent it from exceeding the desired size spec. When forming metal wires, and to increase the size of wires that can be reduced. Results. This can satisfy the desired product characteristics and can be easily applied to the actual industrial site can have a great expected effect on productivity and yield improvement.
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