KR20040076758A - Copper aminoalkoxide complexes, preparation method thereof and process for the formation of copper thin film using the same - Google Patents

Abstract

PURPOSE: Copper aminoalkoxide complexes, a preparation method thereof and a process for formation of the copper thin film using the same complexes are provided. The complexes have high volatility and thermal stability, and are reduced into copper without any reducing agent. Therefore, the complexes can be useful for formation of the high quality copper thin film. CONSTITUTION: A copper aminoalkoxide complex is represented by the formula(1), wherein m is an integer of 1 to 3; n is an integer of 2 to 4; and R and R' are C1-4 alkyl optionally containing fluor. A copper aminoalkoxide complex is represented by the formula(2), wherein m is an integer of 1 to 3; n is an integer of 2 to 4; and R and R' are C1-4 alkyl optionally containing fluor. The method for preparing the copper aminoalkoxide complex of the formula(1) comprises reacting copper alkoxide or copper halogenide with amino alkoxide compound of alkali metals(MOCR'2(CH2)mNR2), wherein M is Li or Na. The method for preparing the copper aminoalkoxide complex of the formula(2) comprises reacting copper alkoxide or copper halogenide with amino alkoxide compound of alkali metals(MOC(R')2(CH2)mO(CH2)nNR2), wherein M is Li or Na.

Description

Copper aminoalkoxide compound, synthesis method thereof, and copper thin film formation method using the same

The present invention relates to a novel divalent organic copper aminoalkoxide compound and its preparation, and more particularly, to a copper aminoalkoxide compound useful as a precursor for preparing a copper thin film by metal organic chemical vapor deposition (MOCVD), a method for synthesizing and It relates to the production of a thin film using the same.

The development of the electronics industry in recent decades has played a major role in raising the standard of living for humans. The direction of development of the electronics industry is changing due to miniaturization, high integration, and processing speed, and as such a change, metal wiring between devices is becoming more dense, highly integrated, and smaller. Currently, wiring metals used in electronic devices include aluminum and tungsten, but aluminum has a disadvantage in that electromigration occurs, and tungsten is not suitable for use in an ultra-high integrated circuit due to its high resistivity. As a result, the need for a new high-performance wiring material is emerging, and copper has a low specific resistance value of 1.67 μΩcm, a high resistance to electric movement, and a high melting point. It is considered.

Metal organic chemical vapor deposition (MOCVD) among the thin film manufacturing techniques is the most popular process for manufacturing a copper thin film because of the excellent layer covering of the film to be produced and the selective deposition of the substrate. In order to effectively apply such MOCVD to thin film fabrication, it is important to secure a precursor having excellent characteristics first, and therefore, the development and understanding of the precursor is essential. In order to be a precursor for MOCVD, the vapor pressure must be high enough, thermally stable during heating to vaporize, and also decompose and deposit to a desired material at a relatively low substrate temperature, e.g., above the vaporization temperature. There must be temperature characteristics.

As a precursor for MOCVD of copper, there are monovalent and divalent organocopper compounds depending on the oxidation state of copper. Precursors of monovalent organocopper include (hfac) CuL compounds consisting of fluorinated betadiketone ligands and neutral ligands (L) (where hfac is 1,1,1,5,5,5-hexafluoro-2, 4-pentanedioato anion) is typical. Compounds of this kind have the advantage of producing pure copper thin films by redistribution in the gas phase (MJ Hampden-Smith, TT Kodas, Polyhedron , 1995 , 14 , 699 ). In particular, the (hfac) Cu (tmvs) compound having trimethylvinylsilane introduced as a neutral ligand (L) has attracted the most attention as a precursor for chemical vapor deposition of copper due to its high volatility. However, thermal stability was not known to be sufficient for the selective deposition of reproducible copper thin films (P. Doppelt, TH Baum, L. Richard, Inorg. Chem. , 1996, 35 , 1286) and also at high vacuum conditions. It has been reported that copper thin films are contaminated with carbon and fluorine (VM Donnelly, ME Gross, J. Vac. Sci. Technol. A , 1993, 11 , 66).

On the other hand, as the precursor of divalent organic copper, most research on beta-diketoate copper compounds has been conducted, but in order to obtain a pure copper thin film by pyrolysis, the deposition temperature must be very high and carbon contamination in the thin film is severely affected. There is a problem that arises (ME Gross, J. Electrochem. Soc. , 1993, 140 , 789). In addition, the Caulton group of the University of Indiana, USA, has synthesized precursors of divalent organocopper by introducing betaketoimine, a ligand, as a major element of nitrogen, which can additionally coordinate with metals in ligand molecules. (DV Baxter, KG Caulton, WC Chiang, MH Chisholm, VF DiStasi, SG Dutremez, K. Folting, Polyhedron , 2001, 20 , 2589). These studies attempted to increase the chemical and thermal stability and improve the volatility of the precursors by saturating the coordination of copper, but the volatility of these compounds is not high enough for the selective deposition of copper and carbon contamination in the film More than 6% have been reported to be severe (T. Gerfin, M. Becht, K. Dahmen, Mater. Sci. Eng. B , 1993, 17 , 97).

In addition to the betadiketoate and betaketoimine salt copper compounds, studies on precursors of divalent organocopper using an alkoxide ligand have also been made. In particular, research on the deposition of pure copper thin films using a reaction in which the copper divalent ions self-reduce into copper as the alkoxide ligand is decomposed by the beta hydrogen removal reaction is drawing attention. As a representative example, the Davis group of Virginia Polytech, USA, deposited copper thin films using Cu (OCH ₂ CH ₂ NMe ₂ ) ₂ compounds and investigated the gaseous products generated during the deposition process by infrared spectroscopy and mass spectrometry. Although beta hydrogen removal reaction occurred, it was confirmed that the copper thin film was contaminated with a significant amount of carbon and oxygen (VL Young, DF Cox, ME Davis, Chem. Mater. , 1993, 5 , 1701). In addition, the Chi group of Taiwan recently deposited a relatively pure copper thin film using a compound of divalent organocopper [Cu (OCCF ₃ R ¹ CH ₂ NHR ² ) ₂ ] using a fluorinated aminoalkoxide as a ligand ( PF Hsu, Y. Chi, TW Lin, CS Liu, AJ Carty, SM Peng, Chem. Vap.Deposition , 2001, 7 , 28), copper 2 by amine / imine conversion reaction following decomposition of carbon bonds in ligand molecules It has been found that the ions can be reduced to copper, but there is a problem that fluorine contamination occurs in the thin film due to the fluorinated aminoalkoxide ligand.

Accordingly, the present inventors have developed a novel copper aminoalkoxide compound that is thermally stable, highly volatile, and capable of depositing pure copper thin films at low temperatures without external reducing agents such as hydrogen molecules.

Accordingly, it is an object of the present invention to provide a copper aminoalkoxide compound that is thermally stable and has increased volatility to form a high quality copper thin film.

1 is a Fourier transform infrared spectroscopy (FTIR) spectrum of a Cu (dmamp) ₂ compound prepared in Example 1 according to the present invention,

2 is a Fourier transform infrared spectroscopy (FTIR) spectrum of a Cu (deamp) ₂ compound prepared in Example 2 according to the present invention,

3 is a graph showing the results of thermogravimetric analysis (TGA) and differential thermal analysis (DTA) of the Cu (dmamp) ₂ compound prepared in Example 1 according to the present invention,

4 is a graph showing the results of thermogravimetric analysis (TGA) and differential thermal analysis (DTA) of the Cu (deamp) ₂ compound prepared in Example 2 according to the present invention,

5 is an X-ray diffraction pattern of the thin film obtained in Example 3 according to the present invention,

6 is an X-ray diffraction pattern of a solid obtained after pyrolysis of a Cu (dmamp) ₂ compound prepared in Example 1 according to the present invention,

7 is a scanning electron micrograph of a thin film obtained using a Cu (dmamp) ₂ compound prepared in Example 3 according to the present invention,

8 is an X-ray diffraction pattern of a thin film obtained using a Cu (deamp) ₂ compound prepared in Example 5 according to the present invention,

9 is a molecular structure of a solid phase obtained by X-ray single crystal structure analysis of the Cu (dmamp) ₂ compound prepared in Example 1 according to the present invention.

In order to achieve the above object, the present invention provides a copper aminoalkoxide compound represented by the following formula (1):

Formula 1

In addition, the present invention provides a copper aminoalkoxide compound represented by the following general formula (2):

Formula 2

Where

m is an integer from 1 to 3, n is an integer from 2 to 4, R and R 'is an alkyl group of C _{1-4 with} or without fluorine.

Hereinafter, the present invention will be described in more detail.

In the compounds of Formulas 1 and 2, m is preferably 1 or 2, n is preferably 2 or 3. In addition, R and R 'is preferably CH ₃ , CF ₃ , C ₂ H ₅ , CH (CH ₃ ) ₂ , C (CH ₃ ) ₃ . Particularly, when R is a methyl group, the sublimation temperature is 40-50 ° C. (10 ⁻² Torr) among the divalent organocopper alkoxide compounds known so far, which is the most volatile solid. In addition, when R is an ethyl group, since it is a liquid at room temperature, it may be the most suitable precursor for a MOCVD process.

The copper aminoalkoxide compounds represented by Chemical Formulas 1 and 2 according to the present invention are Cu [OCR ′ ₂ (CH ₂ ) _m NR ₂ ] ₂ and Cu [OCR ′ ₂ (CH ₂ ) _m O (CH ₂ ) _n NR, respectively. ₂ ] ₂ , which may be, for example, copper methoxide [Cu (OMe) ₂ ] compounds to compounds (HOCR ′ ₂ (CH ₂ ) _m NR ₂ ) and compounds (HOCR ′ _{2), respectively.} It can be obtained by inducing an alcohol exchange reaction by refluxing in a solvent such as (CH ₂ ) _m O (CH ₂ ) _n NR ₂ ) 2 and toluene.

The reaction can be represented by the following schemes 1 and 2.

In addition to the method of using an alcohol exchange reaction as described above, as shown in Schemes 3 and 4, CuX ₂ (where X is Cl or Br) and 2 equivalents of an alkali metal salt form of the compound MOCR ′ ₂ (CH ₂ ) _m By reacting NR ₂ or MOCR ′ ₂ (CH ₂ ) _m O (CH ₂ ) _n NR ₂ , wherein M is Li or Na, in a THF solvent, the copper aminoalkoxide compounds represented by Formulas 1 and 2 You can get it.

In the above scheme,

X is Cl or Br and M is Li or Na.

The novel copper aminoalkoxide compounds represented by Chemical Formulas 1 and 2 are suitable as copper vapor deposition (MOCVD) precursors because they show sufficient volatility before decomposition temperature and are reduced to copper through pyrolysis.

Meanwhile, the mechanism of the decomposition reaction in which the copper (II) aminoalkoxide compound synthesized in the present invention is reduced to metallic copper can be represented by the following Scheme 5.

The low melting point (82 ° C) of the compound of the present invention, high volatility and excellent solubility in organic solvents not only satisfy the coordination number of copper ions, but also satisfy the coordination number of copper ions by the two aminoalkoxide ligands in the four coordination of copper divalent ions. The two methyl groups in the position and two methyl or ethyl groups substituted at the nitrogen atom of the amine appear to be effective in screening oxygen and nitrogen, thereby reducing intermolecular interactions and increasing affinity for organic solvents.

The novel copper aminoalkoxide compounds represented by Formulas 1 and 2 not only exhibit sufficient volatility prior to decomposition temperature but are also reduced to copper through pyrolysis, making them suitable as copper deposit MOCVD new materials.

The novel bis (aminoalkoxy) copper (II) compounds represented by the above formulas (1) and (2) are viscous liquids or solids having a very low melting point at room temperature, and are organic solvents such as diethyl ether, tetrahydrofuran and toluene. It has high solubility and the like and shows relatively high volatility.

The invention can be better understood by the following examples, which are intended for the purpose of the present invention and are not intended to limit the scope of protection defined by the appended claims.

Example

All experiments were performed in an inert argon or nitrogen atmosphere using a glove box or Schlenk line. The structures of the reaction products obtained in Examples 1 and 2, respectively, include Fourier transform infrared spectroscopy (FTIR), elemental analysis (EA), mass spectrometry (MS: electron ionization, EI), It was confirmed using X-ray single crystal analysis.

Thermogravimetric analysis / differential thermal analysis (TGA / DTA) was used to measure the thermal stability, volatility and decomposition temperature of the copper compounds synthesized in Examples 1 and 2.

Synthesis and Analysis of Copper Amino Alkoxide Compounds

Example 1 Bis (dimethylamino-2-methyl-2-propoxy) copper (II) (C ₁₂ H ₂ : N ₂ O ₂ Cu)

In a 125 mL Schlenk flask, 1.25 g (9.98 mmol) of Cu (OMe) ₂ was dissolved in 50 mL of toluene to form a suspension, followed by slowly adding 2.35 g (20.05 mmol) of dmampH. When the color of the solution began to turn dark purple after a few minutes, a cooling tube was connected on the flask and the solution was refluxed for about 18 hours in a nitrogen atmosphere. After the reaction was completed, the solution was filtered, and the solvent was removed from the filtrate under reduced pressure to obtain the title compound as a dark purple solid. This solid compound was again reduced to 10 ⁻² mmMg and sublimed at 40 ° C. to be purified into dark purple crystalline form.

Melting Point: 80-90 ^o C

Yield: 2.4 g (82%)

Elemental Analysis: Calculated: C, 48.71; H, 9.54; N, 9.47. Found: C, 47.39; H, 9.75; N, 9.17.

FTIR (cm ^-1 , KBr pellets): ν (MO) 537, 500, 430

Mass spectrometry MS (EI, 70 eV), m / z (ion, relative strength): 295 ([Cu (L) ₂ ] ⁺ , 9), 237 ([Cu (L) ₂ -CH ₂ NMe ₂ ] ⁺ , 37), 222 ([Cu (L) ₂ -CH ₂ NMe ₂ -Me] ⁺ , 9), 179 ([Cu (L)] ⁺ , 34), 164 ([Cu (L)-Me] ⁺ , 17 ), 58 ([CH ₂ NMe ₂ ] ⁺ , 100)

Example 2: Bis (diethylamino-2-methyl-2-propoxy) copper (II) (C ₁₆ H ₃₆ N ₂ O ₂ Cu)

In a 125 mL Schlenk flask, 0.24 g (10.44 mmol) of Na was dissolved in 50 mL of THF to form a suspension, followed by the slow addition of 1.46 g (10.05 mmol) of deampH. The solution was reacted under reflux for 16 hours in a nitrogen atmosphere, and then the resulting solution was slowly added to a suspension prepared by adding 0.68 g (5.06 mmol) of CuCl ₂ to 25 mL of THF. The solution was stirred at room temperature for 4 hours, filtered and the solvent removed under reduced pressure to give the title compound as a very viscous dark purple liquid.

Yield: 1.54 g (86%)

Elemental Analysis: Calcd: C, 54.59; H, 10.31; N, 7.96. Found: C, 55.33; H, 10.77; N, 9.32

FTIR (cm ^-1 , KBr pellets): ν (MO) 571, 522, 416

Mass spectrometry MS (EI, 70 eV), m / z (ion, relative strength): 352 ([Cu (L) ₂ ] ⁺ , 10)

Thermal decomposition weight analysis differential thermal analysis (TGA / DTA) graphs of the copper compounds synthesized in Examples 1 and 2, respectively, are shown in FIGS. 3 and 4. In Figures 3 and 4, the Cu (dmamp) ₂ compound exhibits a sharp mass reduction at 100 to 200 ° C, the Cu (deamp) ₂ compound at 60 to 70 ° C, and both compounds are responsible for the decomposition of the compound at around 200 ° C. The endothermic peaks along are shown on the DTA curve. In the TG curve, T _1/2 (the temperature at which the weight of the sample reached the first 1/2 in the course of temperature reduction) was 175 ° C and 130 ° C, respectively.

Fabrication of Copper Thin Films

Example 3

A copper metal thin film was deposited on a silicon substrate using bis (dimethylamino-2-methyl-2-propoxy) copper (II) synthesized in Example 1 as a precursor. A stainless steel reactor was used for the deposition of the thin film and a (001) cotton silicon wafer was used as the substrate. First, the silicon substrate was washed with distilled water and acetone, then immersed in a 3: 1 solution of sulfuric acid and hydrogen peroxide solution and heated at 80 ^° C. for 30 minutes to prepare a silicon substrate on which an oxide film was formed. The resulting silicon substrate was washed again with distilled water and then mounted on a sample support in the reactor using nitrogen. The initial pressure of the reactor was 4 mTorr and during deposition the precursor temperature was maintained at 40 ^° C., argon was injected at a rate of 5 sccm as carrier gas and the precursor material obtained in Example 1 was injected into the reactor. At this time, the pressure of the reactor was maintained at 60 mTorr and the temperature of the substrate at 250 ^° C.

In the X-ray photoelectron spectrum of the obtained thin film, optoelectronic peaks of copper and Auger peaks of (Cu 2p) copper were clearly seen, indicating that the metallic copper thin film was deposited. The thin film consists of copper, oxygen, and carbon, but oxygen and carbon appear to appear in the spectrum due to contamination during the transfer of the sample to the spectrometer after the thin film is deposited. The crystallinity of the copper metal thin film was observed using an X-ray diffraction pattern. In the X-ray diffraction pattern shown in FIG. 5, the characteristic peaks of Cu (111) and Cu (200) at 2θ = 42.98 ° and 2θ = 50.43 °, respectively. Looks. The measured resistivity of this thin film was 50 Ωcm and the deposition rate was 300 nm / h. It can be seen from this that the metal copper thin film prepared on the silicon substrate at 250 ^° C. using bis (dimethylamino-2-methyl-2-propoxy) copper (II) precursor was crystalline.

In Figures 3 and 4, the Cu (dmamp) ₂ compound exhibits a sharp mass loss at 100 to 200 ° C, the Cu (deamp) ₂ compound at 60 to 70 ° C, and both compounds are responsible for decomposition of the compound near 200 ° C. The endothermic peaks along are shown in the DTA curve. In the TG curve, T _1/2 (the temperature at which the weight of the sample reached the first 1/2 during the weight loss process) was 175 ° C and 130 ° C, respectively. Pyrolysis experiments were performed to find out whether copper (II) amino alkoxide compounds synthesized in the present invention could be used to produce a thin copper film without an external reducing agent such as hydrogen. The solid remaining after the Cu (dmamp) ₂ compound obtained in Example 1 was pyrolyzed at 200 ° C. for 3 hours in an inert nitrogen atmosphere was analyzed by X-ray diffraction. In the X-ray diffraction pattern of FIG. 6, Cu (111), Cu (200), Cu (220), and Cu (311) peaks are clearly seen, indicating that the solid remaining after pyrolysis is cubic pure copper.

It was also confirmed that the gaseous and liquid phase reaction products consisted of aminoalcohols [HOC (Me) ₂ CH ₂ NR ₂ ], acetone (Me ₂ CO) and endiamine [ME ₂ NC (H) = NMe ₂ ] compounds. This result is evidence supporting the decomposition reaction mechanism shown in Scheme 5. The reaction in which the copper (II) aminoalkoxide compound is reduced to copper in Scheme 5 may be described as a reductive removal reaction according to the γ-hydrogen removal reaction.

Example 4

A copper thin film was prepared in the same manner as in Example 3, except that the deposition temperature was increased to 300 ^° C. of the substrate. In the X-ray photoelectron spectra of the obtained thin film, optoelectronic peaks and Auger peaks of copper were clearly seen, confirming that a metallic copper thin film was deposited. X-ray diffraction patterns showed characteristic peaks of copper at 2θ = 42.98 ° and 2θ = 50.43 °. The scanning electron micrograph of the obtained thin film can confirm formation of crystalline copper (FIG. 7). In addition, when the specific resistance of the thin film was measured, its value was 80 Ωcm and the deposition rate was 85 nm / h. From this, it can be seen that the metallic copper thin film prepared on the silicon substrate at 300 ^° C. using bis (dimethylamino-2-methyl-2-propoxy) copper (II) precursor was crystalline.

Example 5

A copper thin film was prepared in the same manner as in Example 3, except that the temperature of the bis (diethylamino-2-methyl-2-propoxy) copper (II) precursor was maintained at 38 ^° C. In the X-ray photoelectron spectra of the obtained thin film, optoelectronic peaks and Auger peaks of copper were clearly seen, confirming that a metallic copper thin film was deposited. The X-ray diffraction pattern of the thin film is shown in FIG. 8, in which the characteristic peaks of copper can be seen at 2θ = 42.98 ° and 2θ = 50.43 °. In addition, the deposition rate of the thin film was 37 nm / h. From this, it can be seen that the metal copper thin film prepared on the silicon substrate at 250 ^° C. using bis (diethylamino-2-methyl-2-propoxy) copper (II) precursor was crystalline.

Example 6

Same as Example 3 except that the deposition of bis (diethylamino-2-methyl-2-propoxy) copper (II) precursor was maintained at 38 ° C. and the temperature of the substrate was raised to 300 ^° C. The procedure was followed to produce a copper thin film. In the X-ray photoelectron spectra of the obtained thin film, the photoelectric peaks of the copper and the Auger peaks were observed, indicating that the metallic copper thin film was deposited. In the X-ray diffraction pattern, very small peaks were observed only at 2θ = 42.98 °. The deposition rate of the thin film was 20 nm / h. From this, it can be seen that the metal copper thin film prepared on the silicon substrate at 300 ° C. using bis (diethylamino-2-methyl-2-propoxy) copper (II) precursor was not very crystalline.

As described above, the copper (II) aminoalkoxide compound according to the present invention has a high volatility, is sufficiently stable thermally, and can be reduced to copper by self pyrolysis without an external reducing agent, thereby producing a high-purity, high-quality copper thin film. It can be usefully used as a copper precursor for MOCVD.

Claims (6)

Copper aminoalkoxide compound represented by the following formula (1): Formula 1 Where m is an integer from 1 to 3, n is an integer from 2 to 4, R and R 'is an alkyl group of C _{1-4 with} or without fluorine. Copper aminoalkoxide compound represented by the following formula (2): Formula 2 Where m is an integer from 1 to 3, n is an integer from 2 to 4, R and R 'is a C _1-4 alkyl group with or without fluorine. The method according to claim 1 or 2 R or R 'is at least one selected from CH ₃ , CF ₃ , C ₂ H ₅ , CH (CH ₃ ) ₂ and C (CH ₃ ) ₃ . Amino alkoxide compounds [MOCR ' ₂ (CH ₂ ) mNR ₂ ] of copper alkoxides or copper halides with alkali metals, wherein R, R' and m are as defined in claim 1 and M is Li or Na A process for preparing a copper amino alkoxide compound of formula 1 according to claim 1 comprising reacting. Amino alkoxide compounds of copper alkoxides or copper halides with alkali metals [MOC (R ') ₂ (CH ₂ ) _m O (CH ₂ ) _n NR ₂ ] where R, R', n and m are defined in claim 1 And M is Li or Na), wherein the copper aminoalkoxide compound of formula 2 according to claim 2 is reacted. A method of growing a copper thin film using the copper aminoalkoxide compound of claim 1 or 2 as a precursor.