KR20040072348A - High density plasma cvd equipment - Google Patents

High density plasma cvd equipment Download PDF

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Publication number
KR20040072348A
KR20040072348A KR1020030008798A KR20030008798A KR20040072348A KR 20040072348 A KR20040072348 A KR 20040072348A KR 1020030008798 A KR1020030008798 A KR 1020030008798A KR 20030008798 A KR20030008798 A KR 20030008798A KR 20040072348 A KR20040072348 A KR 20040072348A
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South Korea
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injectors
chamber
wafer
density plasma
injector
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KR1020030008798A
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Korean (ko)
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정우찬
류경민
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삼성전자주식회사
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Priority to KR1020030008798A priority Critical patent/KR20040072348A/en
Publication of KR20040072348A publication Critical patent/KR20040072348A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Abstract

PURPOSE: A high-density plasma CVD(Chemical Vapor Deposition) apparatus is provided to form uniformly thickness of an insulating layer by injecting uniformly a gas on the surface of a wafer. CONSTITUTION: A chamber(110) is used for performing a process for depositing an insulating layer. A cover(120) is installed on an upper part of the chamber. An electrostatic chuck(130) is arranged at the bottom of the chamber. A wafer is loaded and fixed on the electrostatic chuck. The first injectors(142) are arranged on an inner wall of the chamber in order to inject a source gas. The second injectors(144) are arranged between the first injectors. The second injectors are longer than the first injectors. The second injectors are used for forming uniformly the amount of gas on an edge and a center of the wafer.

Description

고밀도 플라즈마 화학기상증착 설비{HIGH DENSITY PLASMA CVD EQUIPMENT}High Density Plasma Chemical Vapor Deposition Facility {HIGH DENSITY PLASMA CVD EQUIPMENT}

본 발명은 반도체 고밀도 플라즈마 화학기상증착(High Density Plasma Chemical Vapour Deposition) 설비에 관한 것으로, 좀 더 구체적으로는 박판 형성용 가스가 반도체 웨이퍼의 표면에 균일하게 분포될 수 있는 고밀도 플라즈마 화학 기상 증착설비에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor high density plasma chemical vapor deposition apparatus. More particularly, the present invention relates to a high density plasma chemical vapor deposition apparatus in which a gas for forming a sheet may be uniformly distributed on the surface of a semiconductor wafer. It is about.

반도체 장치의 제조과정에서 많은 재질의 막들이 웨이퍼에 형성되고 가공된다. 이들 막을 형성시키는 방법들 가운데 대표적인 것이 막 성분을 포함하는 가스들을 챔버 내에 공급하여 챔버 내의 일정 온도와 압력하에서 화학반응을 통해 막을 형성하는 CVD 방법이다.In the manufacture of semiconductor devices, films of many materials are formed and processed on a wafer. A typical method of forming these films is a CVD method in which gases containing film components are supplied into a chamber to form a film through chemical reaction at a constant temperature and pressure in the chamber.

노벨러스(Novellas) HDP(High density plasma) CVD 설비와 같은 화학 기상 증착 설비는 반도체 제조용 실리콘 기판(silicon substrate)과 같은 소형 기판 상부에 특정 박막을 형성하는데 이용되며, 근래에는 액정판 같은 상대적으로 면적이 큰 기판에도 적용되고 있다. 플라즈마 화학 기상 증착 설비는 다수의 기판을 동시에 처리하는 배치식이 주로 이용되었으나, 최근에는 기판의 처리를 자동화함으로써 단일 기판을 공정의 한 단위로 하는 매엽식 설비도 많이 사용되고 있다.Chemical vapor deposition facilities, such as the Novellus High Density Plasma (HDP) CVD facility, are used to form specific thin films on top of small substrates, such as silicon substrates for semiconductor manufacturing. It is also applied to a large substrate. Plasma chemical vapor deposition facilities have been mainly used in a batch type processing a plurality of substrates at the same time, but recently, a single sheet is a unit of the process by automating the processing of the substrate is also widely used.

유수의 매엽식 설비는 반도체를 척에 고정하고 그 상부에서 박판 형성용 가스를 분사하는 방식을 채택하고 있는데, 이 때 가스를 분사하는 것이 인젝터이다. 그런데, 종래 화학 기상 증착 설비의 인젝터는 웨이퍼의 가장자리부에 가스가 분사되도록 배치되는데, 보통 여러 인젝터들이 사용된다. 그런데, 가스의 분사 방향이 웨이퍼의 가장자리 쪽으로만 한정되어 웨이퍼의 전 표면에 가스가 균일하지 않게 분포하는 문제가 발생한다.The leading single-leaf type equipment adopts a method of fixing a semiconductor to a chuck and injecting a gas for forming a sheet from the upper part, and injecting the gas at this time is an injector. By the way, the injector of the conventional chemical vapor deposition equipment is arranged so that the gas is injected to the edge of the wafer, usually several injectors are used. However, the gas injection direction is limited only to the edge of the wafer, which causes a problem that the gas is not uniformly distributed on the entire surface of the wafer.

본 발명은 이와 같은 종래의 문제점을 해결하기 위한 것으로, 그 목적은 화학 기상 증착 설비에서 박판 형성용 가스가 반도체 웨이퍼의 표면에 균일하게 분포될 수 있도록 그 구조가 개선된 인젝터를 채용한 고밀도 플라즈마 화학기상증착 설비를 제공하는 데 그 목적이 있다.The present invention is to solve such a conventional problem, the object of the high-density plasma chemistry employing an injector with an improved structure so that the gas for forming a thin plate in the chemical vapor deposition equipment can be uniformly distributed on the surface of the semiconductor wafer The purpose is to provide a vapor deposition facility.

도 1은 본 발명의 실시예에 따른 반도체 웨이퍼의 박막 증착 설비를 설명하기 위한 개략적인 단면도;1 is a schematic cross-sectional view illustrating a thin film deposition apparatus of a semiconductor wafer according to an embodiment of the present invention;

도 2는 제1인젝터와 제2인젝터의 배치 구조를 설명하기 위한 도면이다.FIG. 2 is a diagram for describing an arrangement structure of a first injector and a second injector.

* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

110 : 증착 챔버110: deposition chamber

130 : 정전척130: electrostatic chuck

142 : 제1인젝터142: first injector

144 : 제2인젝터144: second injector

상술한 목적을 달성하기 위한 본 발명의 특징에 의하면, 반도체 웨이퍼에 박막을 증착하기 위한 설비는 절연막 증착 공정이 실시되는 챔버; 상기 챔버의 상부에 설치된 커버; 상기 챔버의 저면에 배치되어, 웨이퍼가 안치되어 고정되는 정전척 및; 상기 챔버의 내측벽에 배치되어, 절연막 증착을 위한 소스 가스를 분사하는 복수개의 제1인젝터들과 상기 제1인젝터들 사이에 배치되는 그리고 상기 제1인젝터의 길이보다 상대적으로 길게 형성된 복수개의 제2인젝터들을 갖는다. 본 발명에서 상기 제1 및 제 2 인젝터들은 수평면에 대해 50?? 내지 60??로 경사지게 배치된다.According to a feature of the present invention for achieving the above object, a facility for depositing a thin film on a semiconductor wafer comprises a chamber in which an insulating film deposition process is performed; A cover installed above the chamber; An electrostatic chuck disposed on the bottom surface of the chamber and in which the wafer is placed and fixed; A plurality of first injectors disposed on an inner wall of the chamber and disposed between the plurality of first injectors for injecting a source gas for depositing an insulating layer and the first injectors and formed to be relatively longer than a length of the first injector; Have injectors. In the present invention, the first and the second injectors are 50 ?? To inclined from 60 to 60 degrees.

예컨대, 본 발명의 실시예는 여러 가지 형태로 변형될 수 있으며, 본 발명의 범위가 아래에서 상술하는 실시예로 인해 한정되어 지는 것으로 해석되어져서는 안 된다. 본 실시예는 당업계에서 평균적인 지식을 가진 자에게 본 발명을 보다 완전하게 설명하기 위해서 제공되어지는 것이다. 따라서, 도면에서의 요소의 형상 등은 보다 명확한 설명을 강조하기 위해서 과장되어진 것이다.For example, embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited by the embodiments described below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Accordingly, the shape of the elements in the drawings and the like are exaggerated to emphasize a clearer description.

이하, 본 발명의 실시예를 첨부된 도면 도 1 및 도 2에 의거하여 상세히 설명한다. 또, 상기 도면들에서 동일한 기능을 수행하는 구성 요소에 대해서는 동일한 참조 번호를 병기한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to FIGS. 1 and 2. In addition, in the drawings, the same reference numerals are denoted together for components that perform the same function.

도 1은 본 발명의 실시예에 따른 반도체 웨이퍼의 박막 증착 설비를 설명하기 위한 개략적인 단면도이고, 도 2는 제1인젝터와 제2인젝터의 배치 구조를 설명하기 위한 도면이다.FIG. 1 is a schematic cross-sectional view for describing a thin film deposition apparatus of a semiconductor wafer according to an embodiment of the present invention, and FIG. 2 is a view for explaining an arrangement structure of a first injector and a second injector.

도 1 및 도 2에서 보여주는 바와 같이, 고밀도 플라즈마 화학기상증착 설비(100)는 증착 챔버(110)의 저면에 웨이퍼를 정전기로 고정하는 정전척(130)이 배치된다. 커버(120)는 증착 챔버(110)의 상부에 설치되어, 증착 챔버(110)를 외부와 격리시키게 된다. 증착 챔버(110)의 상단 내측벽에는 소스 가스, 한 예로 실란 가스를 분사하는 제1인젝터(142)들과 제2인젝터(144)들이 배치된다.1 and 2, in the high density plasma chemical vapor deposition apparatus 100, an electrostatic chuck 130 for statically fixing a wafer to the bottom of the deposition chamber 110 is disposed. The cover 120 is installed above the deposition chamber 110 to isolate the deposition chamber 110 from the outside. First injectors 142 and second injectors 144 for injecting a source gas, for example, silane gas, are disposed on an upper inner wall of the deposition chamber 110.

상기 제1 및 제2인젝터(142,144)들은 수평면, 즉 정전기 척(130)의 표면에 대해 50?? 내지 60?? 정도의 각도를 이루도록 배치된다. 여기서, 상기 제1인젝터(142)는 90도 간격으로 4개가 설치되며, 상기 제2인젝터(144)는 상기 제1인젝터(142) 사이 사이에 90도 간격으로 4개가 배치된다.The first and second injectors 142 and 144 may have a horizontal plane of 50 ° with respect to the surface of the electrostatic chuck 130. To 60 ?? It is arranged to form an angle. Here, four first injectors 142 are installed at intervals of 90 degrees, and four second injectors 144 are disposed at intervals of 90 degrees between the first injectors 142.

즉, 상기 증착 챔버(110)에는 제1인젝터(142)와 제2인젝터(144)가 번갈아가며 배치되어 있다는 것을 알 수 있다. 한편, 본 발명에서 가장 중요한 구조적인 특징은 상기 제1인젝터(142)와 제2인젝터(144)의 길이가 서로 다르다는 점이다. 예컨대, 제1인젝터(142)의 길이는 1.5INCH, 제2인젝터(144)의 길이는 4INCH로 제2인젝터가 제1인젝터보다 더 길게 형성된다. 이처럼, 서로 다른 길이를 갖는 인젝터들을 번갈아가며 배치한 것은, 제2인젝터(144)의 분사위치를 제1인젝터(142)의 분사위치 보다 더 안쪽(웨이퍼의 중앙)으로 위치시키기 위함이다. 이렇게 함으로써, 웨이퍼의 중앙으로 보다 많은 소스가스가 분사됨으로써, 웨이퍼 중앙이 가장자리 부분보다 절연막이 얇게 증착되는 현상을 방지할 수 있다.That is, it can be seen that the first injector 142 and the second injector 144 are alternately arranged in the deposition chamber 110. Meanwhile, the most important structural feature of the present invention is that the lengths of the first injector 142 and the second injector 144 are different from each other. For example, the length of the first injector 142 is 1.5INCH and the length of the second injector 144 is 4INCH, so that the second injector is formed longer than the first injector. As such, the alternate arrangement of the injectors having different lengths is to position the injection position of the second injector 144 inward (center of the wafer) more than the injection position of the first injector 142. By doing so, more source gas is injected into the center of the wafer, whereby the phenomenon in which the insulating film is deposited thinner than the edge portion of the center of the wafer can be prevented.

본 발명의 고밀도 플라즈마 화학기상증착 설비는 제1인젝터(142)와 제2인젝터(144)의 길이를 달리하여 웨이퍼의 센터와 가장자리로 분사되는 소그 가스량을일정하게 하여 균일성을 개선한 것이다.The high-density plasma chemical vapor deposition apparatus of the present invention improves uniformity by varying the length of the first injector 142 and the second injector 144 so as to uniform the amount of sog gas injected to the center and the edge of the wafer.

이상에서, 본 발명에 따른 고밀도 플라즈마 화학기상증착 설비의 구성 및 작용을 상기한 설명 및 도면에 따라 도시하였지만 이는 예를 들어 설명한 것에 불과하며 본 발명의 기술적 사상을 벗어나지 않는 범위 내에서 다양한 변화 및 변경이 가능함은 물론이다.In the above, the configuration and operation of the high-density plasma chemical vapor deposition equipment according to the present invention has been shown in accordance with the above description and drawings, but this is merely described, for example, and various changes and modifications without departing from the technical spirit of the present invention. Of course this is possible.

이와 같은 본 발명의 박막 증착 설비에 의하면, 웨이퍼의 전체 표면에 걸쳐 절연막을 균일한 두께로 증착할 수 있게 된다. 따라서, 후속 공정인 사진 식각 공정이나 화학기계적 연마 공정시, 공정 마진이 확보되면서 연마 두께의 균일성도 향상된다.According to such a thin film deposition apparatus of the present invention, the insulating film can be deposited with a uniform thickness over the entire surface of the wafer. Therefore, during the subsequent photolithography process or the chemical mechanical polishing process, the process margin is secured and the uniformity of the polishing thickness is also improved.

Claims (2)

반도체 웨이퍼에 박막을 증착하기 위한 설비에 있어서:In a facility for depositing thin films on semiconductor wafers: 절연막 증착 공정이 실시되는 챔버;A chamber in which an insulating film deposition process is performed; 상기 챔버의 상부에 설치된 커버;A cover installed above the chamber; 상기 챔버의 저면에 배치되어, 웨이퍼가 안치되어 고정되는 정전척 및;An electrostatic chuck disposed on the bottom surface of the chamber and in which the wafer is placed and fixed; 상기 챔버의 내측벽에 배치되어, 절연막 증착을 위한 소스 가스를 분사하는 복수개의 제1인젝터들과 상기 제1인젝터들 사이에 배치되는 그리고 상기 제1인젝터의 길이보다 상대적으로 길게 형성된 복수개의 제2인젝터들을 포함하여, 상기 웨이퍼의 가장자리와 센터로 플로우되는 가스량을 균일하게 하는 것을 특징으로 하는 고밀도 플라즈마 화학기상증착설비.A plurality of first injectors disposed on an inner wall of the chamber and disposed between the plurality of first injectors for injecting a source gas for depositing an insulating layer and the first injectors and formed to be relatively longer than a length of the first injector; A high density plasma chemical vapor deposition apparatus comprising injectors to uniformize the amount of gas flowing to the edge and center of the wafer. 제 1 항에 있어서,The method of claim 1, 상기 제1 및 제 2 인젝터들은 수평면에 대해 50?? 내지 60??로 경사지게 배치되어, 절연막 증착을 위한 소스 가스를 분사하는 것을 특징으로 하는 고밀도 플라즈마 화학기상증착설비.The first and second injectors may be 50 ° relative to a horizontal plane. It is disposed obliquely to 60 ~ 60 ℃, high density plasma chemical vapor deposition equipment, characterized in that for spraying the source gas for insulating film deposition.
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