KR20040055042A - Chemical Mechanical Polishing Slurry Composition For Metal Layers - Google Patents

Abstract

PURPOSE: Provided is a chemical-mechanical polishing slurry composition used for polishing a metal film formed on a semiconductor substrate, which is excellent in a dispersion-stability and a selective ratio. CONSTITUTION: The chemical-mechanical polishing slurry composition contains: 0.1-20.0wt%(based on the total slurry composition) of a polishing agent selected from the group consisting of a gamma-alumina, an alpha-alumina, a fumed-silica, a colloidal silica, a ceria, and a mixture thereof; 0.1-10wt%(based on the total slurry composition) of hydrogen peroxide capable of producing a hydroxy radical and 0.01-5.0wt%(based on the total slurry composition) of an iron salt; 0.01-5.0wt%(based on the total slurry composition) of a sulfonic acid polishing-improving agent selected from the group consisting of a sulfonic acid, an ethane sulfonic acid, a methane sulfonic acid, a toluene sulfonic acid, an ethyl sulfonic acid, a sulfane disulfonic acid, and etc.

Description

Chemical Mechanical Polishing Slurry Composition For Metal Layers

The present invention relates to a chemical-mechanical polishing slurry composition, and more particularly, to a chemical-mechanical polishing slurry composition which is not only useful for polishing a metal film formed on a semiconductor substrate but also having excellent dispersion stability and selectivity.

Semiconductor integrated circuits consist of a number of active devices formed on a silicon substrate, which are connected to each other to form circuits and components. Typically, the active devices are connected to each other by a multi-level interconnection, for example, forming a multi-layer interconnect structure with a first metal layer, a connection layer, a second metal layer and / or a third and subsequent metal layer, and the like. In recent years, the use of copper and copper alloys instead of aluminum is increasing as metal wiring for multilayer connection of integrated circuits. Copper has some outstanding properties as a metal, in particular, it has a lower resistance than aluminum alloys and at the same time high resistance to electromigration.

Thus, a semiconductor fabrication process generally includes providing tungsten or copper interconnects, or metallization, in individual layers of the dielectric oxide film. Typically, the dielectric oxide film is formed of an oxide such as phosphosilicate glass (PSG), borophosilicate glass (BPSG), silicon oxide (SiO ₂ ), and the oxide film formed is a conventional planarization technique. Planarized to. The planarized oxide film is etched or processed to pattern a series of trenches and holes, after which a thin barrier layer is deposited over the oxide film. In general, the barrier layer is formed of a thin film of titanium (Ti) and titanium nitride (TiN) for forming a Ti / TiN pile, or a tantalum (Ta) and tantalum nitride (TaN) thin film for forming a Ta / TaN pile. Such barrier layers may be deposited by physical vapor deposition (PVD), sputtering, chemical vapor deposition (CVD), and the like. Thus, the barrier layer is coated not only on the top surface of the oxide film but also on the surfaces of the trenches and holes, and serves to improve adhesion between the metallization layer and the oxide film. Metallization is achieved by stacking a conductive material such as tungsten (W) or copper (Cu) on the barrier layer. Metal-filled trenches form lines, damascenes, or global wiring layers, while metal-filled holes form studs or biases, and also form local interconnections between the top and bottom layers. . After that, the wiring is completed by removing the barrier layer and the tungsten or copper layer from the surface of the oxide film.

The damascene process creates other properties that are directly defined by conductive interconnects and chemical mechanical polishing. In general, the damascene process begins by forming a dielectric, such as an oxide, on a wafer substrate. The dielectric formed is patterned, for example, by a lithography process using a photoresist layer, so that throughs are formed in the dielectric and at the bottom by the substrate or barrier. Next, a barrier layer is formed on the sidewalls of the through and a conformal blanket layer of conductive material such as copper or tungsten is deposited over the wafer surface. To produce the final product, excess copper or tungsten that extends over the trench or bias is removed along with a barrier layer deposited on the surface of the substrate. Numerous methods are known for planarizing wafers in the fabrication of integrated circuits. Recently, a popular method is chemical mechanical polishing (CMP). CMP planarizes the wafer sufficiently and is useful for removing excess copper and barrier layers.

Interlevel dielectrics (ILDs), for example doped or undoped silicon dioxide, are used to electrically interrupt different metallization levels in a semiconductor substrate or well. Electrical connections between different interconnect levels are made through metallized vias, which are made of titanium (Ti), titanium nitride (TiN), aluminum copper (Al-Cu), aluminum silicon for electrical connection. Various types such as (Al-Si), copper (Cu), tungsten (W), precious metals (e.g., iridium (Ir), ruthenium (Ru), gold (Au) and platinum (Pt)) and combinations thereof It can be filled with metals and alloys. Generally, barrier layers such as titanium (Ti), titanium nitride (TiN), tantalum (Ta) or tantalum nitride (TaN) barrier films are used to easily adhere the metal layer to the vias of the silicon dioxide layer. At the contact level, the barrier film also acts as a diffusion barrier to prevent the conductive metal and silicon dioxide from reacting. In one semiconductor manufacturing process, metal vias or contacts are formed by blanket metal deposition followed by chemical mechanical polishing (CMP) steps. In a typical process, the via holes are etched as interconnect lines through the interlevel dielectric. Subsequently, a barrier film is formed in the via hole formed by etching on the ILD, and a metal film is blanket deposited into the barrier film and the via hole. The deposition is continued until the via holes are fully filled with the blanket deposited metal, followed by chemical mechanical polishing (CMP) to remove excess metal to form metal vias.

Chemical mechanical polishing is a semiconductor planarization technique that utilizes a chemical slurry in conjunction with a polishing pad to planarize the surface of a semiconductor wafer or to remove nonuniformities of the surface. In chemical mechanical polishing, the mechanical movement of the polishing pad relative to the wafer where friction is present is optionally combined with a chemical process to remove exposed portions of the wafer surface. Slurries play a number of roles, for example, the role of the medium in dispersing friction particles and the promotion of chemical processes, including various chemicals. In order to achieve optimal results in chemical mechanical polishing, there is usually a synergistic relationship between chemical and mechanical processes. In a typical chemical mechanical polishing process, the substrate to be polished is in direct contact with a rotating polishing pad. During the polishing process, the pad and the substrate are rotated while exerting a downward force on the pad on the substrate, and an abrasive and a chemically reactive solution, commonly referred to as a slurry, are applied to the pad. The polishing process begins by chemically reacting a slurry with a substrate to be polished, and the abrasive mechanically polishes the substrate. The abrasive is typically in a slurry but may be fixed on the polishing pad. The polishing process is facilitated by the rotational movement of the pad relative to the substrate and / or the movement of the substrate relative to the pad when supplying the polishing composition to the pad / substrate interface. Continue polishing in this manner until the desired material is removed from the substrate.

The polishing composition is an important factor in the CMP process. Depending on the choice of oxidant, abrasive and other useful additives, the polishing composition can be adjusted to effectively polish the metal layer at the desired polishing rate while minimizing surface defects, damage, corrosion and erosion of the wafer. In addition, the polishing composition can be used to have controlled polishing selectivity for the particular materials used in integrated circuit technology. Thus, the polishing effect of a particular polishing composition depends not only on the composition of the component metals and barrier films in the vias, but also on the chemical properties of the oxide films. As an example, the principle of chemical-mechanical polishing of tungsten is first described, in which the metal surface is oxidized and passivated by the oxidizing agent in the polishing liquid, and no further reaction proceeds on the passivated surface. The oxide film formed on the surface is weaker than the metal film, so that the oxide film of the iron portion in contact with the polishing pad is removed by the abrasive particles, and is oxidized by the oxidant when the metal surface is exposed. By repeating this step, the metal film can be polished. At this time, when the abrasive particles aggregate in the polishing liquid, not only adversely affect the reproducibility of the polishing rate, but also cause scratches on the polishing surface. Therefore, the abrasive particles should be well dispersed in the polishing liquid. Particles in solution have a charge that depends on the pH of the solution, and an electrical double layer forms at the solid and liquid interface. At this time, the potential between the liquid and the particle is called a zeta potential. If the zeta potential of the particles in the polishing liquid is small, aggregation between particles is likely to occur, and stable use of the polishing liquid is difficult. Therefore, it is necessary to adjust the pH of the polishing liquid so that the zeta potential of the particles becomes a predetermined value or more. In addition, a separate additive may be added to remove such cohesiveness.

The rapid removal of the metal film by the CMP process and the good planarization during the manufacturing process of the semiconductor integrated circuit improve the productivity of the semiconductor integrated circuit. Therefore, the high polishing rate of the slurry on the metal film is very important, and also the stability of the slurry to express the continuous performance is required.

SUMMARY OF THE INVENTION An object of the present invention is to provide a chemical-mechanical polishing slurry composition for polishing a metal film, which has a high polishing rate for the metal film and a polishing rate for the metal film is higher than that for the silicon oxide film.

Another object of the present invention is to provide a chemical-mechanical polishing slurry composition for polishing a metal film which can improve dispersion stability of particles.

In order to achieve the above object, the present invention provides a chemical-mechanical polishing slurry composition of a metal film comprising (a) an abrasive, (b) hydrogen peroxide and iron salt capable of generating hydroxyl radicals, and (c) sulfonic acid polishing enhancer. . Here, it is preferable that the polishing slurry composition further comprises (d) an organic acid having two carboxyl groups and / or (e) a polyacrylate polymer dispersion stabilizer.

In addition, the sulfonic acid polishing enhancer is selected from the group consisting of sulfonic acid, ethanesulfonic acid, methanesulfonic acid, toluenesulfonic acid, ethylsulfonic acid, sulfanedisulfonic acid, sulfanosulfonic acid, naphthalenesulfonic acid, benzenesulfonic acid, methanesulfonyl fluoride and mixtures thereof. The organic acids having the two carboxyl groups include oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, subelic acid, azeraic acid, sebacic acid, maleic acid, glutamic acid, muconic acid, and mixtures thereof. Selected from the group consisting of polyacrylamide, poly (acrylamide-co-acrylic acid), poly (acrylic acid-co-maleic acid), polymethylacrylate, polymethylmethacrylate, poly (methylmethacryl) Late-co-butylmethacrylate), poly (methylmethacrylate-co-ethylacrylate), poly (methylmethacrylate-co-methac It acid) is selected from polyacrylic acid, polyacrylic acid sodium salt, ammonium polyacrylate and mixtures thereof are preferred.

Hereinafter, the present invention will be described in more detail.

(A) As the abrasive included in the chemical-mechanical polishing slurry composition for polishing a metal film according to the present invention, γ-alumina, α-alumina, fumed silica, colloidal silica, ceria, or the like may be used alone or in combination. More preferred is the use of silica. Fumed silica has excellent dispersion stability and hydrogen peroxide stability and facilitates the preparation of the polishing slurry. The content of the abrasive is preferably 0.1 to 20.0% by weight based on the total slurry composition, and more preferably 1 to 10.0% by weight. If the content of the abrasive is less than 0.1% by weight, the metal film is not sufficiently polished. If the content of the abrasive exceeds 20.0% by weight, there is a problem in dispersion stability. The specific surface area of the fumed silica preferred as the abrasive is 50 to 200 m ² / g, more preferably 80 to 180 m ² / g. If the specific surface area of the fumed silica is less than 50 m ² / g, it is difficult to suppress the polishing of the silicon oxide film, and if it exceeds 200 m ² / g, the stability of the polishing slurry may be lowered.

(b) Hydrogen peroxide and iron salts capable of generating hydroxyl radicals included in the chemical mechanical polishing slurry compositions of the present invention are widely known as Fenton's reagents. Fenton oxidation originated in 1876 by a chemist named Fenton oxidizing tartaric acid with hydrogen peroxide and iron salts. Thus, the mixture of hydrogen peroxide and iron salt was called Fenton's reagent. The hydroxyl radicals have a high oxidizing power and thus quickly oxidize the metal film, thereby facilitating mechanical polishing by the abrasive of the slurry. In fenton oxidation, iron ions cycle between Fe ²⁺ and Fe ³⁺ . Fe ²⁺ having a catalytic function is to catalyze the hydrogen peroxide generating an OH radical from hydrogen peroxide and the oxidation to Fe ^3+, Fe ³⁺ is reduced to Fe ²⁺ again. The content of hydrogen peroxide relative to the total slurry composition is preferably 0.1 to 10% by weight, more preferably 1.0 to 5.0% by weight. As the iron salt, FeCl ₂ , FeCl ₃ , FeSO ₄ , Fe ₂ (SO ₄ ) ₃ , FePO ₄ , iron acetate, iron and the like can be used, of which FeCl ₃ is most suitable. The content of the iron salt is preferably 0.01 to 5.0% by weight based on the total slurry composition, and more preferably 0.01 to 2.0% by weight. When the content of the hydrogen peroxide is less than 0.1 wt% with respect to the total slurry composition, there is a fear that the metal oxide film may not be easily formed, and when the content of the hydrogen peroxide exceeds 10 wt%, polishing efficiency and dispersion stability may be deteriorated. In addition, when the content of the iron salt is less than 0.01% by weight, there is a fear that the oxidation of the metal film does not proceed smoothly, when it exceeds 5.0% by weight there is a problem that the dispersion stability is poor.

(c) As the polishing enhancer included in the chemical mechanical polishing slurry composition of the present invention, sulfonic acid is used. For example, sulfonic acid, ethanesulfonic acid, methanesulfonic acid, toluenesulfonic acid, ethylsulfonic acid, sulfanedisulfonic acid, sulfanomono Sulphonic acid, naphthalenesulfonic acid, benzenesulfonic acid, methanesulfonyl fluoride and the like can be used, most preferably ethanesulfonic acid. The sulfonic acid has a function of improving the polishing of the metal film, the content of the sulfonic acid is preferably 0.01 to 5.0% by weight based on the total slurry composition, more preferably 0.01 to 2.0% by weight. If the content of the sulfonic acid is less than 0.01% by weight, there is a problem that the polishing efficiency and the selectivity is lowered.

(d) The chemical mechanical polishing slurry composition of the present invention may include an organic acid having two carboxyl groups. The organic acid having two carboxyl groups has a function of delaying the reaction of the Fenton reagent to maintain the performance of the slurry for a long time and to improve the polishing of the metal film. The organic acid containing the carboxyl group used in the slurry composition of the present invention is oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, Pimelic acid, Suberic acid, Azelaic acid, Sebacic acid, etc. Maleic acid containing a carbon double bond, Glutaconic acid, Divalent carboxylic acid, such as a muconic acid, can be illustrated. The content of the organic acid is preferably 0.001 to 5.0% by weight, more preferably 0.01 to 2.0% by weight based on the total slurry composition. When two or more organic acids having two carboxyl groups are mixed and used, a preferable combination thereof is 0.01 to 2.0% by weight of a mixture of malonic acid and maleic acid, a mixture of succinic acid and maleic acid, a mixture of adipic acid and maleic acid, And a mixture of malonic acid, succinic acid and maleic acid. If the content of the organic acid is less than 0.001% by weight, there is a problem in that the polishing efficiency is lowered.

(e) The dispersion stabilizer included in the chemical mechanical polishing slurry composition of the present invention is a polyacrylate-based polymer, that is, a polymer in which an acryl group forms a main chain and / or a polymer in which block copolymerization is performed. Examples of the dispersion stabilizer include polyacrylamide, poly (acrylamide-co-acrylic acid), poly (acrylic acid-co-maleic acid), polymethylacrylate, polymethylmethacrylate, poly (methylmethacrylate-co- Butyl methacrylate), poly (methyl methacrylate-co-ethyl acrylate), poly (methyl methacrylate-co-methacrylic acid), polyacrylic acid, sodium polyacrylate salt, ammonium polyacrylate salt, etc. can be illustrated. . Preferred dispersion stabilizers are ammonium polyacrylate salts, and more preferred dispersion stabilizers are polyacrylates having a molecular weight of 5,000 to 20,000 and having ammonium groups. The content of the dispersion stabilizer is preferably 0.001 to 1.0% by weight, more preferably 0.01 to 0.5% by weight based on the total slurry composition. If the content of the dispersion stabilizer is less than 0.001% by weight but more than 1.0% by weight, there is a problem that the dispersion stability of the slurry composition is lowered.

The pH of the slurry composition according to the invention is preferably 2 to 6, more preferably 2 to 4. Here, if the pH of the slurry composition is less than 2, there is a problem in dispersion stability, and if the pH exceeds 6, there is a problem in polishing efficiency. In order to adjust the pH of the slurry composition according to the present invention in the above range, pH adjusting agents such as hydrochloric acid, acetic acid, sulfuric acid, etc. may be added as necessary. The remaining components of the polishing slurry composition according to the present invention are water, preferably deionized water, and if necessary, to minimize the gelation and particle precipitation phenomenon during storage and transportation, and to maintain dispersion stability. It may further include a dispersant, a buffer solution for suppressing the effect of the pH change, and various conventional salts for lowering the viscosity of the particle dispersion. In addition, in order to suppress particle precipitation phenomenon during storage, the hydrogen peroxide component may be mixed with other slurry composition components immediately before performing the chemical mechanical polishing process.

The chemical-mechanical polishing slurry composition according to the present invention has an excellent polishing rate for the metal film, a faster polishing rate for the metal film than the polishing rate for the silicon oxide film, and thus has a high selectivity and excellent dispersion stability of the slurry. .

Hereinafter, the present invention will be described in more detail with reference to Examples and Comparative Examples, but the following Examples are provided to illustrate the present invention, and do not limit the present invention.

[Comparative Example 1-3, Example 1-6]

Slurry containing 5.0 wt% fumed silica, 2.0 wt% hydrogen peroxide and residual amount of water (Comparative Example 1), 5.0 wt% fumed silica, 2.0 wt% hydrogen peroxide, 0.05 wt% FeCl ₃ or FeSO _4, and residual water A slurry (Comparative Example 2-3) was prepared. In addition, a slurry was prepared comprising 5.0% by weight fumed silica, 2.0% by weight hydrogen peroxide, 0.05% by weight of various iron salts, 0.06% by weight ethanesulfonic acid, 0.03% by weight succinic acid and residual water. The tungsten film and the silicon oxide film laminated on the silicon wafer were polished using the prepared slurry, and the tungsten polishing rate, the silicon oxide film polishing rate, and the selectivity were measured and shown in Table 1 below. In Table 1 below, the unit of the polishing rate is Å / min, and methods and conditions for measuring the tungsten polishing rate and the silicon oxide film polishing rate are as follows.

A specimen was prepared by depositing an oxide film having a thickness of 10,000 Å on a silicon substrate using plasma vapor deposition (PECVD). Further, another wafer specimen was prepared by depositing tungsten to a thickness of 15000 kPa over the same oxide film by electroplating. Tungsten film and silicon were polished using GLI Technology's POLI-500CE polishing machine, Rodel's IC1400 pad, NF-200 carrier film, and the slurry compositions of Comparative Examples 1-8. The polishing rate of the oxide film was measured. The polishing conditions were a platen speed of 40 rpm, a head speed of 40 rpm, a load pressure of 7 psi, a slurry feed rate of 150 ml / min, and a polishing time of 1 minute.

Iron salt Tungsten Polishing Speed Silicon oxide polishing rate Selectivity Comparative Example 1 none 1090 186 5.90: 1 Comparative Example 2 FeCl ₃ 1532 192 7.98: 1 Comparative Example 3 FeSO ₄ 1470 188 7.82: 1 Example 1 FeCl ₂ 3597 130 27.7: 1 Example 2 FeCl ₃ 3692 124 29.8: 1 Example 3 FeSO ₄ 3653 171 21.4: 1 Example 4 Fe ₂ (SO ₄ ) ₃ 3510 152 23.1: 1 Example 5 Iron acetylacetonate 2970 172 17.3: 1 Example 6 Iron acetate 3057 159 19.2: 1

Example 7-12

A slurry was prepared comprising 5.0 wt% fumed silica, 2.0 wt% hydrogen peroxide, 0.05 wt% FeCl ₃ , 0.1 wt% glutaconic acid, various concentrations of ethanesulfonic acid and residual water as shown in Table 2 below. Using the prepared slurry, the tungsten film and the silicon oxide film laminated on the silicon wafer were polished, and the tungsten polishing rate, silicon oxide film polishing rate, and selectivity were measured and shown in Table 2 below.

Ethanesulfonic acid (% by weight) Tungsten Grinding Speed Silicon oxide polishing rate Selectivity Example 7 0.05 3604 126 28.6: 1 Example 8 0.06 3610 111 32.5: 1 Example 9 0.07 3795 120 31.6: 1 Example 10 0.08 3603 143 25.2: 1 Example 11 0.09 3546 112 31.7: 1 Example 12 0.10 3500 121 28.9: 1

From Tables 1 and 2, the tungsten polishing rate and the selectivity of the slurry to which ethanesulfonic acid was added (Example 1-12) were added to only the fruit tree (Comparative Example 1) or the slurry to which only the Fenton reagent was added (Comparative Example 2- It can be seen that better than 3).

Example 13-20

A slurry comprising 5.0% by weight of fumed silica, 2.0% by weight of hydrogen peroxide, 0.05% by weight of FeCl ₃ , 0.06% by weight of ethanesulfonic acid, 0.1% by weight of glutamic acid, 0.03% by weight of various polyacrylic acids shown in Table 3 below, and a residual amount of water Prepared. In order to determine the stability of the prepared slurry, the zeta potential of the particles in the slurry and the particle size after one month were measured, and are shown in Table 3 below. In the following Table 3, the polyacrylamide of Example 13 has a molecular weight of about 10,000, the molecular weight of the polymethyl acrylate of Example 14 is about 30,000, the molecular weight of the polymethyl methacrylate of Example 15 is about 120,000, The molecular weight of polyacrylic acid (sodium salt) of Example 19 is about 9,500, and the molecular weight of polyacrylic acid (ammonium salt) of Example 20 is about 10,000.

additive Sedimentation (after 15 days) Zeta potential (mV) Average particle size (initial, nm) Average particle size (nm after 30 days) Example 13 Polyacrylamide none -19 220 254 Example 14 Polymethylacrylate none -23 231 246 Example 15 Polymethyl methacrylate none -26 244 268 Example 16 Polyacrylic Acid (Mw: 2000) none -17 234 250 Example 17 Polyacrylic Acid (Mw: 750000) none -25 221 255 Example 18 Polyacrylic Acid (Mw: 3000000) none -21 255 287 Example 19 Polyacrylic Acid (Sodium Salt) none -28 222 240 Example 20 Polyacrylic acid (ammonium salt) none -31 225 237

From Table 3, the slurry to which the various polyacrylic acid is added does not generate precipitation even after 15 days of manufacture, and not only has a small increase in the average particle size even after elapse of time, but also has a low zeta potential, resulting in dispersion stability during long-term storage. It can be seen that excellent.

As described above, the chemical-mechanical polishing slurry composition according to the present invention has an excellent polishing rate for the metal film, a polishing rate for the metal film is faster than the polishing rate for the silicon oxide film, and a dispersion stability of the slurry. This is excellent.

Claims (13)

A chemical-mechanical polishing slurry composition of a metal film comprising (a) an abrasive, (b) hydrogen peroxide and iron salt capable of generating hydroxyl radicals, and (c) a sulfonic acid polishing enhancer. The chemical-mechanical polishing slurry composition of claim 1, further comprising (d) an organic acid having two carboxyl groups. 3. The chemical-mechanical polishing slurry composition of claim 2, further comprising (e) a polyacrylate-based polymer dispersion stabilizer. The abrasive according to claim 1, wherein the abrasive is selected from the group consisting of γ-alumina, α-alumina, fumed silica, colloidal silica, ceria, and mixtures thereof, wherein the amount of the abrasive is 0.1 to 20.0 weight based on the total slurry composition. Chemical mechanical polishing slurry composition of the metal film. The chemical-mechanical polishing slurry composition of claim 1, wherein the content of hydrogen peroxide is 0.1 to 10 wt% with respect to the total slurry composition, and the content of iron salt is 0.01 to 5.0 wt% with respect to the total slurry composition. The chemical-mechanical polishing slurry of a metal film according to claim 1, wherein the iron salt is selected from the group consisting of FeCl ₂ , FeCl ₃ , FeSO ₄ , Fe ₂ (SO ₄ ) ₃ , FePO ₄ , iron acetate, and mixtures thereof. Composition. The chemical-mechanical polishing slurry composition according to any one of claims 1 to 5, wherein the iron salt is FeCl ₃ . The method of claim 1, wherein the sulfonic acid polishing enhancer is composed of sulfonic acid, ethanesulfonic acid, methanesulfonic acid, toluenesulfonic acid, ethylsulfonic acid, sulfanedisulfonic acid, sulfanosulfonic acid, naphthalenesulfonic acid, benzenesulfonic acid, methanesulfonyl fluoride, and mixtures thereof. A chemical-mechanical polishing slurry composition of a metal film selected from the group. The chemical-mechanical polishing slurry composition of claim 1, wherein the sulfonic acid polishing enhancer is present in an amount of 0.01 to 5.0 wt% based on the total slurry composition. According to claim 2, wherein the organic acid having two carboxyl groups are oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, subbelic acid, azeraic acid, sebacic acid, maleic acid, glutamic acid, muconic acid And a mixture thereof, and a chemical-mechanical polishing slurry composition of the metal film. The chemical-mechanical polishing slurry composition of claim 2, wherein the content of the organic acid having two carboxyl groups is 0.001 to 5.0 wt% based on the total slurry composition. The method of claim 3, wherein the polyacrylate-based polymer dispersion stabilizer is polyacrylamide, poly (acrylamide-co-acrylic acid), poly (acrylic acid-co-maleic acid), polymethylacrylate, polymethylmethacrylate, Poly (methyl methacrylate-co-butyl methacrylate), poly (methyl methacrylate-co-ethyl acrylate), poly (methyl methacrylate-co-methacrylic acid), polyacrylic acid, polyacrylate sodium salt, A chemical-mechanical polishing slurry composition of a metal film, selected from the group consisting of ammonium polyacrylate salts and mixtures thereof. The chemical-mechanical polishing slurry composition of claim 3, wherein the polyacrylate-based polymer dispersion stabilizer is present in an amount of 0.001 to 1.0 wt% based on the total slurry composition.