KR20040048569A - Method for forming a conductive polymeric layer of tantalum condenser - Google Patents
Method for forming a conductive polymeric layer of tantalum condenser Download PDFInfo
- Publication number
- KR20040048569A KR20040048569A KR1020020076473A KR20020076473A KR20040048569A KR 20040048569 A KR20040048569 A KR 20040048569A KR 1020020076473 A KR1020020076473 A KR 1020020076473A KR 20020076473 A KR20020076473 A KR 20020076473A KR 20040048569 A KR20040048569 A KR 20040048569A
- Authority
- KR
- South Korea
- Prior art keywords
- tantalum
- polypyrrole
- polymerization process
- forming
- polythiophene
- Prior art date
Links
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims abstract description 29
- 229910052715 tantalum Inorganic materials 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000013047 polymeric layer Substances 0.000 title 1
- 238000006116 polymerization reaction Methods 0.000 claims abstract description 23
- 229920000128 polypyrrole Polymers 0.000 claims abstract description 19
- 230000001590 oxidative effect Effects 0.000 claims abstract description 15
- 229920000123 polythiophene Polymers 0.000 claims abstract description 13
- 239000003990 capacitor Substances 0.000 claims abstract description 10
- 239000007800 oxidant agent Substances 0.000 claims abstract description 9
- 239000000126 substance Substances 0.000 claims abstract description 9
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000178 monomer Substances 0.000 claims abstract description 8
- 239000003085 diluting agent Substances 0.000 claims abstract description 5
- 239000011259 mixed solution Substances 0.000 claims abstract description 5
- 229930192474 thiophene Natural products 0.000 claims abstract description 4
- 239000007784 solid electrolyte Substances 0.000 claims description 9
- 238000001035 drying Methods 0.000 claims description 8
- 229920000642 polymer Polymers 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000007598 dipping method Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229920001940 conductive polymer Polymers 0.000 abstract description 5
- 239000004020 conductor Substances 0.000 abstract description 2
- 239000007787 solid Substances 0.000 abstract 2
- 238000004140 cleaning Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 12
- 238000010304 firing Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 229920001002 functional polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/022—Electrolytes; Absorbents
- H01G9/025—Solid electrolytes
- H01G9/032—Inorganic semiconducting electrolytes, e.g. MnO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/15—Solid electrolytic capacitors
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
Abstract
Description
본 발명은 탄탈륨 고체전해 콘덴서를 제조하는데 있어 소성 공정에서 폴리피롤과 폴리티오펜을 사용하여 2차의 산화중합 공정으로 이루어진 탄탈륨 고체전해 콘덴서의 전도성 고분자층 형성 방법에 관한 것이다.The present invention relates to a method for forming a conductive polymer layer of a tantalum solid electrolyte capacitor comprising a secondary oxidation polymerization process using polypyrrole and polythiophene in the firing process in manufacturing a tantalum solid electrolyte capacitor.
일반적으로, 탄탈 콘덴서의 제조 공정은 탄탈 분말에 바인더를 혼합하여 펠릿을 성형하고 성형된 소자를 진공 소결로에 장진한 후 진공에서 가열시켜 순수한 탄탈 분말만을 소결시키고 소자를 소자 벨트에 용접하는 공정을 거친다.In general, the manufacturing process of the tantalum capacitor is a process of forming a pellet by mixing the binder with the tantalum powder to form a pellet, and the molded element is loaded in a vacuum sintering furnace and heated in vacuum to sinter only pure tantalum powder and weld the element to the element belt Rough
그리고, 탄탈 표면에 유전체를 형성하는 화성 공정과 화성 공정에서 생성된 산화 피막의 표면에 이산화망간 층을 형성하기 위한 소성공정을 거친다.Then, a process of forming a dielectric on the tantalum surface and a firing process of forming a manganese dioxide layer on the surface of the oxide film generated in the process of chemical conversion.
탄탈 소자의 표면에 높은 유전성을 보유한 기능성 고분자 물질인 고체 전해질 층을 형성하는 산화중합 공정과 외부 충격에 대한 기계적 강도를 증가시키기 위한 전해중합 공정이 수반된다.An oxidation polymerization process for forming a solid electrolyte layer, which is a functional polymer material having high dielectric properties, on the surface of a tantalum device and an electropolymerization process for increasing mechanical strength against external impact are involved.
종래에는 고체전해질로 폴리피롤을 사용하여 산화중합하고 전해중합 하거나, 폴리싸이오펜을 사용하여 모노머, 산화제, 희석제가 혼합된 용액에디핑하였다.Conventionally, oxidative polymerization and electropolymerization using polypyrrole is used as a solid electrolyte, or polythiophene is used to immerse a mixed solution of a monomer, an oxidizer, and a diluent.
이러한 폴리피롤을 사용하면 전극을 만들기 어려워서 전해중합에 문제가 있어 대량 생산이 어렵고 산화 중합만 할 경우에는 30 내지 40 회 반복해야 한다.If the polypyrrole is used, it is difficult to make the electrode, and thus there is a problem in electropolymerization, so that mass production is difficult, and if only oxidative polymerization is performed, it should be repeated 30 to 40 times.
또한 폴리싸이오펜을 사용할 때 탄탈륨 소자의 포어(Pore) 내부로 폴리머 층 형성이 어렵다.In addition, when using polythiophene, it is difficult to form a polymer layer inside the pores of tantalum devices.
본 발명의 목적은 상기와 같은 문제점을 해결하기 위하여 폴리피롤의 산화 중합과 폴리티오펜의 산화중합 공정으로 이루어진 탄탈륨 고체전해 콘덴서의 전도성 고분자층 형성 방법을 제공하고자 하는 것이다.It is an object of the present invention to provide a method for forming a conductive polymer layer of a tantalum solid electrolyte capacitor comprising an oxidation polymerization process of polypyrrole and an oxidation polymerization process of polythiophene in order to solve the above problems.
본 발명의 소성 방법은 화성 공정을 거친 탄탈 소자를 산화제에 함침하고 건조한 후 모노머인 폴리피롤에 함침하며 건조하고 세척하는 공정을 1 내지 3회 반복하는 폴리피롤 산화중합 공정과, 모노머인 티오펜, 산화제, 희석제가 혼합된 혼합용액에 상기 폴리피롤 산화중합 공정을 거친 탄탈 소자를 디핑하고 건조시키는 공정을 5 내지 10 회 반복하는 폴리티오펜 산화중합 공정으로 이루어진다.The firing method of the present invention is a polypyrrole oxidative polymerization process of repeating the process of impregnating a tantalum element having undergone a chemical conversion process with an oxidizing agent, drying, impregnating a polypyrrole as a monomer, drying and washing 1 to 3 times, and thiophene, an oxidizing agent, and a monomer. The polythiophene oxidative polymerization process is repeated 5 to 10 times by dipping and drying the tantalum element which has undergone the polypyrrole oxidative polymerization process in a mixed solution containing a diluent.
본 발명을 실시예를 참조하여 상세히 설명한다.The present invention will be described in detail with reference to Examples.
본 발명의 탄탈륨 고체전해 콘덴서의 전해질층 형성 방법은 폴리피롤을 사용하여 산화중합 공정으로 1차 폴리머 층을 형성하고, 폴리티오펜을 사용하여 산화중합 공정으로 2차 폴리머 층을 형성하는 것이다.The electrolyte layer forming method of the tantalum solid electrolyte capacitor of the present invention is to form a primary polymer layer by an oxidative polymerization process using polypyrrole, and to form a secondary polymer layer by an oxidative polymerization process using polythiophene.
본 발명의 폴리피롤 산화중합 공정은 화성 공정을 거친 탄탈 소자를 산화제에 함침하고 건조한 후 모노머인 피롤에 함침하며 건조하고 세척하는 공정을 1 내지 3회 반복하여 이루어진다.The polypyrrole oxidative polymerization process of the present invention is performed by repeating a process of impregnating a tantalum element subjected to a chemical conversion process with an oxidant, drying, impregnating with a monomer pyrrole, drying, and washing.
본 발명의 폴리티오펜 산화중합 공정은 모노머인 티오펜, 산화제, 희석제가 혼합된 혼합용액에 폴리피롤 산화중합 공정을 거친 탄탈 소자를 디핑하고 건조시키는 공정을 5 내지 10 회 반복하여 이루어진다.The polythiophene oxidative polymerization process of the present invention is performed by repeating a step of dipping and drying a tantalum element which has undergone the polypyrrole oxidative polymerization process in a mixed solution containing thiophene, an oxidizing agent, and a diluent as monomers, and drying 5 to 10 times.
본 발명의 소성 방법에 따르면, 폴리피롤로 산화중합하여 탄탈 소자 내부에 폴리머 층을 형성시켜 소자 내부의 공극을 고분자로 채워 넣어 공극을 제거시킨 후 그 위에 폴리티오펜의 산화중합층을 형성하게 되어 등가직렬저항(ESR)이 감소하고 LC 특성이 향상하게 된다.According to the firing method of the present invention, by polymerizing with polypyrrole to form a polymer layer inside the tantalum element to fill the pores inside the polymer with a polymer to remove the pores and to form an oxidized polymerization layer of polythiophene thereon The series resistance (ESR) is reduced and the LC characteristic is improved.
상기와 같이 구성된 본 발명의 탄탈륨 고체전해 콘덴서의 전도성 고분자층 형성 방법은 폴리피롤과 폴리티오펜을 사용하여 2차에 걸쳐서 산화중합하여 탄탈 소자의 전도체 층을 형성하여 탄탈 고체전해 콘덴서의 정격 용량 특성을 향상시키는 효과가 있다.In the conductive polymer layer forming method of the tantalum solid electrolyte capacitor of the present invention configured as described above, polypyrrole and polythiophene are oxidized and polymerized over a second time to form a conductor layer of the tantalum element, thereby improving the rated capacity characteristics of the tantalum solid electrolyte capacitor. It is effective to improve.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020020076473A KR20040048569A (en) | 2002-12-04 | 2002-12-04 | Method for forming a conductive polymeric layer of tantalum condenser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020020076473A KR20040048569A (en) | 2002-12-04 | 2002-12-04 | Method for forming a conductive polymeric layer of tantalum condenser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20040048569A true KR20040048569A (en) | 2004-06-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020020076473A KR20040048569A (en) | 2002-12-04 | 2002-12-04 | Method for forming a conductive polymeric layer of tantalum condenser |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101044964B1 (en) * | 2004-11-12 | 2011-06-28 | 에스케이케미칼주식회사 | Solid electrolyte capacitor having plate type anode |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03183111A (en) * | 1989-12-12 | 1991-08-09 | Marcon Electron Co Ltd | Manufacture of solid electrolytic capacitor |
| KR980011547A (en) * | 1996-07-16 | 1998-04-30 | 가네꼬 히사시 | Solid Electrolytic Capacitors And Methods For Manufacturing The Same |
| JP2000188239A (en) * | 1998-12-21 | 2000-07-04 | Nec Corp | Solid electrolytic capacitor and its production |
| KR20020085539A (en) * | 2001-05-09 | 2002-11-16 | 에스케이케미칼주식회사 | Solid Electrolyte Capacitor and Method for Producing the Same |
-
2002
- 2002-12-04 KR KR1020020076473A patent/KR20040048569A/en not_active Application Discontinuation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03183111A (en) * | 1989-12-12 | 1991-08-09 | Marcon Electron Co Ltd | Manufacture of solid electrolytic capacitor |
| KR980011547A (en) * | 1996-07-16 | 1998-04-30 | 가네꼬 히사시 | Solid Electrolytic Capacitors And Methods For Manufacturing The Same |
| JP2000188239A (en) * | 1998-12-21 | 2000-07-04 | Nec Corp | Solid electrolytic capacitor and its production |
| KR20020085539A (en) * | 2001-05-09 | 2002-11-16 | 에스케이케미칼주식회사 | Solid Electrolyte Capacitor and Method for Producing the Same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101044964B1 (en) * | 2004-11-12 | 2011-06-28 | 에스케이케미칼주식회사 | Solid electrolyte capacitor having plate type anode |
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