KR20040047714A - Thermosetting Composition, Halation Preventing Film of Solid State Imaging Device and Process for Forming the Same, and Solid State Imaging Device - Google Patents
Thermosetting Composition, Halation Preventing Film of Solid State Imaging Device and Process for Forming the Same, and Solid State Imaging Device Download PDFInfo
- Publication number
- KR20040047714A KR20040047714A KR1020030085376A KR20030085376A KR20040047714A KR 20040047714 A KR20040047714 A KR 20040047714A KR 1020030085376 A KR1020030085376 A KR 1020030085376A KR 20030085376 A KR20030085376 A KR 20030085376A KR 20040047714 A KR20040047714 A KR 20040047714A
- Authority
- KR
- South Korea
- Prior art keywords
- group
- film
- halation
- thermosetting composition
- solid
- Prior art date
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- 125000004106 butoxy group Chemical group [*]OC([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 239000001191 butyl (2R)-2-hydroxypropanoate Substances 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- URBZEXMYYYABCQ-UHFFFAOYSA-N butyl 2-butoxyacetate Chemical compound CCCCOCC(=O)OCCCC URBZEXMYYYABCQ-UHFFFAOYSA-N 0.000 description 1
- IKRARXXOLDCMCX-UHFFFAOYSA-N butyl 2-butoxypropanoate Chemical compound CCCCOC(C)C(=O)OCCCC IKRARXXOLDCMCX-UHFFFAOYSA-N 0.000 description 1
- FYRUCHOYGVFKLZ-UHFFFAOYSA-N butyl 2-ethoxypropanoate Chemical compound CCCCOC(=O)C(C)OCC FYRUCHOYGVFKLZ-UHFFFAOYSA-N 0.000 description 1
- VFGRALUHHHDIQI-UHFFFAOYSA-N butyl 2-hydroxyacetate Chemical compound CCCCOC(=O)CO VFGRALUHHHDIQI-UHFFFAOYSA-N 0.000 description 1
- JDJWQETUMXXWPD-UHFFFAOYSA-N butyl 2-methoxypropanoate Chemical compound CCCCOC(=O)C(C)OC JDJWQETUMXXWPD-UHFFFAOYSA-N 0.000 description 1
- MENWVOUYOZQBDM-UHFFFAOYSA-N butyl 3-hydroxypropanoate Chemical compound CCCCOC(=O)CCO MENWVOUYOZQBDM-UHFFFAOYSA-N 0.000 description 1
- 229940043232 butyl acetate Drugs 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 125000000332 coumarinyl group Chemical group O1C(=O)C(=CC2=CC=CC=C12)* 0.000 description 1
- WTNDADANUZETTI-UHFFFAOYSA-N cyclohexane-1,2,4-tricarboxylic acid Chemical compound OC(=O)C1CCC(C(O)=O)C(C(O)=O)C1 WTNDADANUZETTI-UHFFFAOYSA-N 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- ZEFVHSWKYCYFFL-UHFFFAOYSA-N diethyl 2-methylidenebutanedioate Chemical compound CCOC(=O)CC(=C)C(=O)OCC ZEFVHSWKYCYFFL-UHFFFAOYSA-N 0.000 description 1
- IEPRKVQEAMIZSS-AATRIKPKSA-N diethyl fumarate Chemical compound CCOC(=O)\C=C\C(=O)OCC IEPRKVQEAMIZSS-AATRIKPKSA-N 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- WNAHIZMDSQCWRP-UHFFFAOYSA-N dodecane-1-thiol Chemical compound CCCCCCCCCCCCS WNAHIZMDSQCWRP-UHFFFAOYSA-N 0.000 description 1
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
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- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
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- YKYONYBAUNKHLG-UHFFFAOYSA-N n-Propyl acetate Natural products CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 1
- 125000006606 n-butoxy group Chemical group 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000003136 n-heptyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001298 n-hexoxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- JIKUXBYRTXDNIY-UHFFFAOYSA-N n-methyl-n-phenylformamide Chemical compound O=CN(C)C1=CC=CC=C1 JIKUXBYRTXDNIY-UHFFFAOYSA-N 0.000 description 1
- ATHHXGZTWNVVOU-VQEHIDDOSA-N n-methylformamide Chemical group CN[13CH]=O ATHHXGZTWNVVOU-VQEHIDDOSA-N 0.000 description 1
- 125000006608 n-octyloxy group Chemical group 0.000 description 1
- 125000003935 n-pentoxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
- 125000003506 n-propoxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- HDLRSIQOZFLEPK-UHFFFAOYSA-N naphthalene-1,2,5,8-tetracarboxylic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C2=C(C(O)=O)C(C(=O)O)=CC=C21 HDLRSIQOZFLEPK-UHFFFAOYSA-N 0.000 description 1
- ZWWQICJTBOCQLA-UHFFFAOYSA-N o-propan-2-yl (propan-2-yloxycarbothioyldisulfanyl)methanethioate Chemical compound CC(C)OC(=S)SSC(=S)OC(C)C ZWWQICJTBOCQLA-UHFFFAOYSA-N 0.000 description 1
- KZCOBXFFBQJQHH-UHFFFAOYSA-N octane-1-thiol Chemical compound CCCCCCCCS KZCOBXFFBQJQHH-UHFFFAOYSA-N 0.000 description 1
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- 230000035699 permeability Effects 0.000 description 1
- QIWKUEJZZCOPFV-UHFFFAOYSA-N phenyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1=CC=CC=C1 QIWKUEJZZCOPFV-UHFFFAOYSA-N 0.000 description 1
- WRAQQYDMVSCOTE-UHFFFAOYSA-N phenyl prop-2-enoate Chemical compound C=CC(=O)OC1=CC=CC=C1 WRAQQYDMVSCOTE-UHFFFAOYSA-N 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
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- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
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- 239000011148 porous material Substances 0.000 description 1
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- LVDAGIFABMFXSJ-UHFFFAOYSA-N propyl 2-butoxyacetate Chemical compound CCCCOCC(=O)OCCC LVDAGIFABMFXSJ-UHFFFAOYSA-N 0.000 description 1
- GYOCIFXDRJJHPF-UHFFFAOYSA-N propyl 2-butoxypropanoate Chemical compound CCCCOC(C)C(=O)OCCC GYOCIFXDRJJHPF-UHFFFAOYSA-N 0.000 description 1
- GXKPKHWZTLSCIB-UHFFFAOYSA-N propyl 2-ethoxypropanoate Chemical compound CCCOC(=O)C(C)OCC GXKPKHWZTLSCIB-UHFFFAOYSA-N 0.000 description 1
- ILVGAIQLOCKNQA-UHFFFAOYSA-N propyl 2-hydroxypropanoate Chemical compound CCCOC(=O)C(C)O ILVGAIQLOCKNQA-UHFFFAOYSA-N 0.000 description 1
- CYIRLFJPTCUCJB-UHFFFAOYSA-N propyl 2-methoxypropanoate Chemical compound CCCOC(=O)C(C)OC CYIRLFJPTCUCJB-UHFFFAOYSA-N 0.000 description 1
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- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007142 ring opening reaction Methods 0.000 description 1
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical group OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 229940014800 succinic anhydride Drugs 0.000 description 1
- OPQYOFWUFGEMRZ-UHFFFAOYSA-N tert-butyl 2,2-dimethylpropaneperoxoate Chemical compound CC(C)(C)OOC(=O)C(C)(C)C OPQYOFWUFGEMRZ-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Structural Engineering (AREA)
- Architecture (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Optical Filters (AREA)
Abstract
Description
본 발명은 열경화성 조성물, 고체 촬상 소자의 할레이션 방지막 및 그의 형성 방법 및 고체 촬상 소자에 관한 것이다.The present invention relates to a thermosetting composition, an anti-halation film for a solid-state image sensor, a method for forming the same, and a solid-state image sensor.
고체 촬상 소자에는 MOS (Metal 0xide Semiconductor)형, CCD (Charge Coupled Device)형 등이 있고, 각각에 일차원 고체 촬상 소자 및 이차원 고체 촬상 소자가 있다. 전자의 예로서는 예를 들면 팩시밀리 등이, 후자의 예로서는 예를 들면 비디오 카메라 등을 들 수 있다.The solid-state imaging device includes a MOS (Metal 0xide Semiconductor) type, a CCD (Charge Coupled Device) type, and the like, and each has a one-dimensional solid-state imaging device and a two-dimensional solid-state imaging device. As an example of the former, a facsimile etc. are mentioned, for example, a video camera etc. are mentioned as an example of the latter.
이러한 고체 촬상 소자는 최근, 디지탈화가 진행하여 사용자의 고품위 지향에 따라 또한 고화질이 요구되고 있다. 디지탈 카메라의 화소수의 증가 등이 그 일례이다.In recent years, such solid-state imaging devices have undergone digitalization and are required to have high image quality in accordance with the user's high quality orientation. An example is an increase in the number of pixels of a digital camera.
고체 촬상 소자에는 흑백용 및 칼라용이 있지만, 그 중 칼라용 고체 촬상 소자는 고체 촬상 소자가 형성된 기판 상에 3색의 칼라 필터를 형성하여 제조된다. 고체 촬상 소자는 그대로도 사용되지만 또한 각 고체 찰상 소자에 대응한 표면에 볼록형 렌즈 (마이크로렌즈)를 구비하여 감도 (집광 능력)을 높이는 일이 행하여 지고 있다 (일본 특허 공개 평 3-223702호 공보 참조).Although the solid-state image sensor has black-and-white color and color use, the solid-state image sensor for color is manufactured by forming a color filter of three colors on the board | substrate with which the solid-state image sensor was formed. Although the solid-state image sensor is used as it is, the convex-type lens (microlens) is provided in the surface corresponding to each solid-state scratching element, and the sensitivity (condensing ability) is improved (refer Unexamined-Japanese-Patent No. 3-223702). ).
고체 촬상 소자에 칼라 필터 및(또는) 마이크로렌즈를 장비하기 위해서는 감광성 재료를 사용한 리소그래피 기술을 이용하여 미세 패턴을 형성하여 행하여 진다.In order to equip a solid-state image sensor with a color filter and / or a microlens, it is performed by forming a fine pattern using the lithographic technique using the photosensitive material.
마이크로렌즈의 형성은 고체 촬상 소자가 형성되고, 필요에 따라 또한 칼라 필터가 형성된 기판 상에, 투명 수지를 도포하여 표면을 평탄화한 후, 감광성 수지로 이루어지는 마이크로렌즈 재료를 도포하여 렌즈의 패턴을 노광하고 현상, 세정 처리하여 남은 투명 수지 블럭을 가열하여 약간 용융시켜 수축시켜 각 블럭을 볼록 렌즈의 형상으로 함으로써 행하여진다.The formation of the microlens is formed on a substrate on which a solid-state image sensor is formed and, if necessary, on a substrate on which a color filter is formed. Then, the transparent resin blocks left after developing and washing are heated, slightly melted and shrunk to form each block in the shape of a convex lens.
상기 칼라 필터나 마이크로렌즈의 형성 공정에서, 감광성 재료를 노광ㆍ패턴화할 때, 기초 기판으로부터의 난반사광에 의해, 노광하고 싶지 않은 부분까지 감광되어 실제의 패턴 크기는 목적하는 크기와는 다른 것이 되는 현상, 즉 「할레이션」이 발생한다는 문제가 있었다.In the process of forming the color filter or the microlens, when the photosensitive material is exposed and patterned, the diffused light from the base substrate is exposed to a portion not to be exposed, and the actual pattern size is different from the desired size. There was a problem that a phenomenon, that is, "halation" occurred.
마이크로렌즈의 경우에 이러한 현상이 발생하면 렌즈의 형상이 가지런하지 않게 되어 깜박임 등이 발생되어 화질에 악영향을 미치게 된다. 이것은 최근과 같이 고체 촬상 소자의 셀 크기가 작아짐에 따라 한층 중대한 문제가 되어 왔다.In the case of a microlens, when this phenomenon occurs, the shape of the lens becomes uneven and flickering occurs, which adversely affects image quality. This has become a more serious problem as the cell size of a solid-state image sensor becomes smaller than in recent years.
이 문제에 관하여 고체 촬상 소자 기판 상에, 리소그래피에 사용하는 방사선을 흡수하는 반사 방지막을 형성하여 반사를 억제하고 할레이션을 방지하는 방법이 알려져 있다. 이 예에는 폴리글리시딜메타크릴레이트를 주성분으로 하고, 경화제에 트리멜리트산을 사용한 CCD용 보호막에, 염료를 배합한 것이 있다 (일본 특허 제2956210호 명세서 참조). 그러나, 이러한 반사 방지막은, 도포한 재료를 가교하여 고화시키기 위해서 행하는 소성 공정 중에, 염료의 일부가 반사 방지막 중에서 승화하여 할레이션 방지 효과가 현저히 저하되거나, 불휘발성의 염료로서는 염료가 보호막 상으로 올라와 할레이션 방지막 상에 형성하는 마이크로렌즈가 원하는 형상으로 형성되지 않기도 하는 등의 결점이 있었다.With respect to this problem, a method of suppressing reflection and preventing halation by forming an antireflection film on a solid-state imaging element substrate that absorbs radiation for lithography is known. In this example, a dye is incorporated into a CCD protective film using polyglycidyl methacrylate as a main component and trimellitic acid as a curing agent (see Japanese Patent No. 2956210). However, in the antireflection film, a part of the dye sublimes in the antireflection film to significantly reduce the anti-halation effect during the firing step performed to crosslink and solidify the applied material, or as the nonvolatile dye, the dye rises onto the protective film. There existed a fault that the microlens formed on the anti-halation film may not be formed in a desired shape.
또한, 불포화 카르복실산 및(또는) 불포화 카르복실산 무수물과, 에폭시기 함유 라디칼 중합성 화합물과, 모노 및(또는) 디올레핀계 불포화 화합물과의 공중합체 및 방사선 흡수성 화합물을 함유하는 할레이션 방지막의 제안이 이루어지고 있다 (일본 특허 공개 평 06-289201호 공보 참조). 이 할레이션 방지막은 형성 후의 온도 이력이 150 ℃ 이하의 공정을 상정한 것이고, 150 ℃를 초과하는 온도에 있어서의 내열성에 관해서는 검증되어 있지 않다.Furthermore, the anti-halation film containing the copolymer of a unsaturated carboxylic acid and / or unsaturated carboxylic anhydride, an epoxy group containing radically polymerizable compound, a mono and / or diolefin type unsaturated compound, and a radiation absorbing compound A proposal is made (see Japanese Patent Laid-Open No. 06-289201). This anti-halation film assumes the process whose temperature history after formation is 150 degrees C or less, and has not been verified about the heat resistance in the temperature exceeding 150 degreeC.
그러나, 칼라용 고체 촬상 소자에 있어서는, 종래 염료 기질을 사용한 칼라 필터용 재료가 사용되기 때문에 칼라 필터는 150 ℃ 정도로, 비교적 저온도에서의 경화가 가능하였다. 그러나, 최근의 고정밀도화의 요청에 따라, 안료계의 재료가 일반적으로 사용되어 왔기 때문에 그 형성 공정에서 180 ℃ 이상의 경화 온도가 필요하게 되고 있다 (일본 특허 공개 평 11-211911호 공보, 일본 특허 공개 평 11-258415호 공보, 일본 특허 공개 2000-111722호 공보 참조). 그 때문에 칼라용 고체 촬상 소자에 있어서, 칼라 필터에 앞서서 형성되는 할레이션 방지막은, 종래보다 증가하여 고온에 노출되게 된다. 종래 알려져 있는 할레이션 방지막용 재료로서는, 이러한 고온에 노출되면 할레이션 방지막으로서 기능하지 않게 되는 것이 알려져 있다. 이 현상은, 150 ℃를 초과하는 고온도 영역에서는, 할레이션 방지막용 재료 중에 배합된 방사선 흡수제가 승화하여 산일하기 때문에 방사선 흡수 능력이 현저히 저하되는 것으로 추정된다.However, in the color solid-state image sensor, since the color filter material which used the conventional dye substrate is used, the color filter was able to harden | cure at the comparatively low temperature about 150 degreeC. However, in recent years, in response to the request for high precision, since a pigment-based material has been generally used, a curing temperature of 180 ° C. or higher is required in the formation step (Japanese Patent Laid-Open No. 11-211911, Japanese Patent Laid-Open) See Japanese Patent Application Laid-Open No. 11-258415 and Japanese Patent Laid-Open No. 2000-111722. Therefore, in the color solid-state image sensor, the anti-halation film formed before a color filter increases compared with the past, and exposes to high temperature. As a conventionally known anti-halation film material, it is known that when it is exposed to such a high temperature, it will not function as an anti-halation film. This phenomenon is presumably lowered in the radiation absorbing ability because the radiation absorbent blended in the antihalation film material sublimes and diffuses in the high temperature region exceeding 150 ° C.
본 발명은 상기와 같은 사정을 감안하여 이루어진 것으로, 그 목적은 고체 촬상 소자에서 칼라 필터나 마이크로렌즈를 형성할 때의 노광 공정에 있어서, 기초 기판으로부터의 난반사광을 효과적으로 억제할 수 있고, 또한 고도의 내열성을 갖는 할레이션 방지막을 형성하는데 적합한 열경화성 조성물, 그것을 사용하여 할레이션 방지막을 형성하는 방법 및 그 방법에 의해 형성된 할레이션 방지막 및 그 할레이션 방지막을 갖는 고체 촬상 소자를 제공하는 것에 있다.SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object thereof is to effectively suppress diffuse reflection light from a base substrate in an exposure step when forming a color filter or a microlens in a solid-state imaging device, The present invention provides a thermosetting composition suitable for forming an anti-halation film having a heat resistance, a method of forming an anti-halation film using the same, and a solid-state imaging device having the anti-halation film formed by the method and the anti-halation film.
도 1은 마이크로렌즈 패턴의 형상을 나타낸 모식도.1 is a schematic diagram showing the shape of a microlens pattern.
본 발명에 의하면, 본 발명의 상기 목적은, 첫째로 [A] (a1) 에폭시기 함유 불포화 화합물 (이하, 「화합물 (a1)」이라 하기도 함) 및 (a2) 방사선 흡수성기를 갖는 라디칼 중합성 화합물 (이하, 「화합물 (a2)」라 하기도 함)을 함유하는 단량체 혼합물의 공중합체 (이하, 「공중합체 [A]」라 하기도 함), 및 [B] 다가 카르복실산 무수물 및 다가 카르복실산으로 이루어지는 군으로부터 선택되는 1종 이상의화합물 (이하, 「[B] 성분」이라 하기도 함)을 함유하는 것을 특징으로 하는 열경화성 조성물에 의해서 달성된다.According to the present invention, the above object of the present invention is, firstly, [A] (a1) an epoxy group-containing unsaturated compound (hereinafter also referred to as "compound (a1)") and (a2) a radically polymerizable compound having a radiation absorbing group ( Hereinafter, a copolymer of a monomer mixture containing "compound (a2)" (hereinafter also referred to as "copolymer [A]"), and [B] polyhydric carboxylic anhydride and polyhydric carboxylic acid It is achieved by the thermosetting composition characterized by containing 1 or more types of compounds (henceforth "the" B component ") chosen from the group which consists of these.
또한 본 발명의 상기 목적은 둘째로, 적어도 이하의 공정 [1] 및 [2]를 포함하는 것을 특징으로 하는 고체 촬상 소자의 할레이션 방지막의 형성 방법에 의해서 달성된다.Moreover, the said objective of this invention is 2nd achieved by the formation method of the anti-halation film | membrane of the solid-state image sensor characterized by including the following process [1] and [2] at least.
[1] 기판 상에 상기한 열경화성 조성물의 도막을 형성하는 공정, 및[1] forming a coating film of the above-mentioned thermosetting composition on a substrate, and
[2] 이 도막을 가열 처리하는 공정.[2] A step of heat treating the coating film.
또한, 본 발명의 상기 목적은 셋째로, 상기 방법에 의해 형성된 고체 촬상 소자의 할레이션 방지막에 의해서 달성되고, 또한 넷째로, 상기 할레이션 방지막을 갖는 고체 촬상 소자에 의해서 달성된다.Further, the above object of the present invention is thirdly achieved by the anti-halation film of the solid-state image sensor formed by the above method, and fourthly by the solid-state image sensor having the anti-halation film.
본 발명에 따르면 고체 촬상 소자에서 칼라 필터나 마이크로렌즈를 형성할 때의 노광 공정에 있어서, 기초 기판으로부터의 난반사광을 효과적으로 억제할 수 있고 또한 가시광선의 투과율이 높고, 또한 고도의 내열성을 갖는 할레이션 방지막을 형성하는데 적합한 열경화성 조성물, 그것을 사용하여 할레이션 방지막을 형성하는 방법 및 그 방법에 의해 형성된 할레이션 방지막 및 그 할레이션 방지막을 갖는 고체 촬상 소자가 제공된다.According to the present invention, in the exposure step when forming a color filter or a microlens in a solid-state image sensor, halides can effectively suppress diffuse reflection light from the base substrate, have high transmittance of visible light, and have high heat resistance. Provided are a thermosetting composition suitable for forming a protective film, a method of forming an anti-halation film using the same, and a solid-state imaging device having the anti-halation film formed by the method and the anti-halation film thereof.
본 발명의 할레이션 방지막은, 해당 할레이션 방지막의 위에 칼라 필터나 마이크로렌즈를 형성할 때의 노광 공정에 있어서, 기초 기판으로부터의 난반사광을 효과적으로 억제할 수 있고, 또한 고도의 내열성을 갖는다. 그 때문에 본 발명의 고체 촬상 소자의 할레이션 방지막 상에 형성된 칼라 필터나 마이크로렌즈는 원하는 형상, 크기의 것으로 할 수 있다.The anti-halation film of the present invention can effectively suppress diffuse reflection light from the base substrate in the exposure step when forming a color filter or microlens on the anti-halation film, and has high heat resistance. Therefore, the color filter and microlens formed on the anti-halation film of the solid-state image sensor of this invention can be made into the desired shape and size.
또한, 본 발명의 고체 촬상 소자는 상기한 할레이션 방지막을 갖는 것으로서, 이 할레이션 방지막 상에 형성된 칼라 필터나 마이크로렌즈는 원하는 형상, 크기의 것이기 때문에 본 발명의 고체 촬상 소자는 신뢰성이 우수하다.In addition, the solid-state imaging device of the present invention has the above-described anti-halation film. Since the color filter and the microlens formed on the anti-halation film are of the desired shape and size, the solid-state imaging device of the present invention is excellent in reliability.
이하, 본 발명에 관하여 설명한다. 먼저, 본 발명의 열경화성 조성물의 각 성분에 관하여 상술한다.EMBODIMENT OF THE INVENTION Hereinafter, this invention is demonstrated. First, each component of the thermosetting composition of this invention is explained in full detail.
공중합체 [A]Copolymer [A]
본 발명에서 사용되는 공중합체 [A]는 화합물 (a1)로부터 유도되는 구성 단위를 바람직하게는 50 내지 95 중량%, 특히 바람직하게는 60 내지 90 중량% 함유하고 있다. 이 구성 단위가 50 중량% 미만인 공중합체는 얻어지는 할레이션 방지막의 내습열성이 저하되는 경향이 있다. 한편 95 중량%을 초과하는 경우는 경화성 조성물의 보존 안정성이 저하되는 경향이 있다.The copolymer [A] used in the present invention preferably contains 50 to 95% by weight, particularly preferably 60 to 90% by weight of the structural unit derived from the compound (a1). The copolymer whose structural unit is less than 50 weight% tends to reduce the moisture heat resistance of the anti-halation film obtained. On the other hand, when it exceeds 95 weight%, there exists a tendency for the storage stability of curable composition to fall.
상기 화합물 (a1)은 에폭시기와 중합성 탄소-탄소 이중 결합을 1 분자 중에 갖는 화합물이고, 구체적으로는 예를 들면 아크릴산글리시딜, 메타크릴산글리시딜, α-에틸아크릴산글리시딜, α-n-프로필아크릴산글리시딜, α-n-부틸아크릴산글리시딜, 아크릴산-3,4-에폭시부틸, 메타크릴산-3,4-에폭시부틸, 아크릴산-6,7-에폭시헵틸, 메타크릴산-6,7-에폭시헵틸, α-에틸아크릴산-6,7-에폭시헵틸, o-비닐벤질글리시딜에테르, m-비닐벤질글리시딜에테르, p-비닐벤질글리시딜에테르 등을 들 수 있다.The compound (a1) is a compound having an epoxy group and a polymerizable carbon-carbon double bond in one molecule, and specifically, for example, glycidyl acrylate, glycidyl methacrylate, α-ethyl acrylate glycidyl, α Glycidyl n-propyl acrylate, Glycidyl α-butyl acrylate, Acrylic acid-3,4-epoxybutyl, Methacrylic acid-3,4-epoxybutyl, Acrylic acid 6,7-epoxyheptyl, Methacrylic Acids-6,7-epoxyheptyl, α-ethylacrylic acid-6,7-epoxyheptyl, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, p-vinylbenzyl glycidyl ether, and the like. Can be.
이들 중, 메타크릴산글리시딜, 메타크릴산-6,7-에폭시헵틸, o-비닐벤질글리시딜에테르, m-비닐벤질글리시딜에테르, p-비닐벤질글리시딜에테르 등이 공중합 반응성 및 얻어지는 할레이션 방지막의 내열성, 경도를 높인다는 관점에서 바람직하게 사용된다. 이러한 (a1) 에폭시기 함유 불포화 화합물은 단독으로 또는 조합하여 사용된다.Of these, methacrylic acid glycidyl, methacrylic acid-6,7-epoxyheptyl, o-vinyl benzyl glycidyl ether, m-vinyl benzyl glycidyl ether, p-vinyl benzyl glycidyl ether, and the like are copolymerized. It is preferably used from the viewpoint of increasing the reactivity and the heat resistance and hardness of the resulting anti-halation film. These (a1) epoxy group containing unsaturated compounds are used individually or in combination.
본 발명에서 사용되는 공중합체 [A]는 화합물 (a2)로부터 유도되는 구성 단위를 바람직하게는 1 내지 40 중량%, 특히 바람직하게는 3 내지 30 중량% 함유하고 있다. 이 구성 단위가 1 중량% 미만이면 할레이션 방지 성능이 불충분해지는 경우가 있다. 한편, 이 구성 단위가 40 중량%를 초과하면 도막의 막 형성성이 저하되는 경향이 있다.The copolymer [A] used in the present invention preferably contains 1 to 40% by weight, particularly preferably 3 to 30% by weight of the structural unit derived from the compound (a2). When this structural unit is less than 1 weight%, antihalation performance may become inadequate. On the other hand, when this structural unit exceeds 40 weight%, there exists a tendency for the film formability of a coating film to fall.
화합물 (a2)가 갖는 방사선 흡수성기로서는 400 nm 이하의 파장, 특히 365 nm의 파장의 빛을 흡수하고, 또한 가시광 영역의 빛은 실질적으로 흡수하지 않는 것이 바람직하게 사용된다. 이러한 방사선 흡수성기로서는, 예를 들면 벤조트리아졸 구조, 살리실레이트 구조, 벤조페논 구조, 치환 아크릴로니트릴 구조, 크산틴 구조, 쿠마린 구조, 프라본 구조, 카르콘 구조를 갖는 기를 들 수 있고, 이들 중에서 벤조트리아졸 구조를 갖는 기가 보다 바람직하다.As the radiation absorbing group of the compound (a2), one that absorbs light having a wavelength of 400 nm or less, particularly 365 nm, and which does not substantially absorb light in the visible region is preferably used. Examples of such radiation absorbing groups include groups having a benzotriazole structure, a salicylate structure, a benzophenone structure, a substituted acrylonitrile structure, a xanthine structure, a coumarin structure, a prabon structure, and a carcon structure, Of these, groups having a benzotriazole structure are more preferred.
벤조트리아졸 구조를 갖는 방사선 흡수성기 중, 하기 화학식 1로 표시되는 구조가 특히 바람직하다.Among the radiation absorbing groups having a benzotriazole structure, a structure represented by the following general formula (1) is particularly preferable.
이러한 방사선 흡수성기를 갖는 라디칼 중합성 화합물로서는, 예를 들면 하기 화학식 2 내지 4로 표시되는 화합물을 들 수 있다.As a radically polymerizable compound which has such a radiation absorbing group, the compound represented by following formula (2)-4 is mentioned, for example.
식 중, R1및 R2는 동일 또는 상이하고, 수소 원자, 탄소수 1 내지 8의 알킬기, 탄소수 1 내지 8의 알콕실기, 시아노기, 히드록시기, 할로겐 원자, 카르복실기 또는 알콕시카르보닐기를 나타내고, R3은 탄소수 2 내지 10의 알킬렌기를 나타내고, R4는 수소 원자 또는 메틸기를 나타낸다.In the formula, R 1 and R 2 are the same or different, and represent a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, an alkoxyl group having 1 to 8 carbon atoms, a cyano group, a hydroxy group, a halogen atom, a carboxyl group or an alkoxycarbonyl group, and R 3 is An alkylene group having 2 to 10 carbon atoms is represented, and R 4 represents a hydrogen atom or a methyl group.
식 중, R4의 정의는 상기와 동일하고, R5는 수소 원자 또는 탄소수 1내지 8의 알킬기를 나타낸다.In the formula, the definition of R 4 is the same as above, and R 5 represents a hydrogen atom or an alkyl group having 1 to 8 carbon atoms.
식 중, R3, R4및 R5의 정의는 상기와 동일하고, R6은 수산기로 치환될 수도 있는 탄소수 1 내지 4의 알킬렌기를 나타낸다.In the formula, the definitions of R 3 , R 4 and R 5 are the same as described above, and R 6 represents an alkylene group having 1 to 4 carbon atoms which may be substituted with a hydroxyl group.
상기 화학식 2에 있어서, R1및 R2로 표시되는 탄소수 1 내지 8의 알킬기로서는, 예를 들면 메틸기, 에틸기, n-프로필기, iso-프로필기, n-부틸기, iso-부틸기, tert-부틸기, n-펜틸기, tert-펜틸기 (아밀기), n-헥실기, tert-헥실기, n-헵틸기, tert-헵틸기, n-옥틸기, 디 tert-옥틸기와 같은 탄소수 1 내지 8의 직쇄 또는 분지쇄상의 알킬기를 들 수 있다. 이들 중에서, 메틸기나 tert-부틸기, tert-펜틸기,tert-헵틸기, 디tert-옥틸기와 같은 탄소수 4 내지 8의 tert-알킬기가 바람직하다.In the formula (2), examples of the alkyl group having 1 to 8 carbon atoms represented by R 1 and R 2 include, for example, methyl group, ethyl group, n-propyl group, iso-propyl group, n-butyl group, iso-butyl group and tert. Carbon number such as -butyl group, n-pentyl group, tert-pentyl group (amyl group), n-hexyl group, tert-hexyl group, n-heptyl group, tert-heptyl group, n-octyl group, di tert-octyl group 1-8 linear or branched alkyl groups are mentioned. Among them, tert-alkyl groups having 4 to 8 carbon atoms such as methyl group, tert-butyl group, tert-pentyl group, tert-heptyl group, and ditert-octyl group are preferable.
R1및 R2로 표시되는 탄소수 1 내지 8의 알콕실기로서는, 예를 들면 메톡시기, 에톡시기, n-프로폭시기, iso-프로폭시기, n-부톡시기, iso-부톡시기, tert-부톡시기, n-펜틸옥시기, n-헥실옥시기, n-헵틸옥시기, n-옥틸옥시기와 같은 탄소수 1 내지 8의 직쇄 또는 분지쇄상의 알콕실기를 들 수 있다.Examples of the alkoxyl group having 1 to 8 carbon atoms represented by R 1 and R 2 include a methoxy group, an ethoxy group, n-propoxy group, iso-propoxy group, n-butoxy group, iso-butoxy group and tert- C1-C8 linear or branched alkoxyl groups, such as a butoxy group, n-pentyloxy group, n-hexyloxy group, n-heptyloxy group, and n-octyloxy group, are mentioned.
R1및 R2로 표시되는 할로겐 원자로서는, 예를 들면 염소 원자, 브롬 원자, 불소 원자, 요오드 원자 등을 들 수 있다. 이들 중에서, 염소 원자가 바람직하다.As a halogen atom represented by R <1> and R <2> , a chlorine atom, a bromine atom, a fluorine atom, an iodine atom, etc. are mentioned, for example. Of these, chlorine atoms are preferred.
R3으로 표시되는 탄소수 2 내지 10의 알킬렌기로서는, 예를 들면 에틸렌기, 트리메틸렌기, 프로필렌기, 테트라메틸렌기, 1,1-디메틸테트라메틸렌기, 부틸렌기, 옥타메틸렌기, 옥틸렌기, 데카메틸렌기, 데실렌기와 같은 탄소수 1 내지 10의 직쇄 또는 분지쇄상의 알킬렌기를 들 수 있다. 이들 중에서, 에틸렌기, 프로필렌기 등이 바람직하다.Examples of the alkylene group having 2 to 10 carbon atoms represented by R 3 include an ethylene group, trimethylene group, propylene group, tetramethylene group, 1,1-dimethyltetramethylene group, butylene group, octamethylene group, octylene group, C1-C10 linear or branched alkylene groups, such as a decamethylene group and a decylene group, are mentioned. Among these, an ethylene group, a propylene group, etc. are preferable.
상기 화학식 3 및 4에 있어서, R5로 표시되는 탄소수 1 내지 8의 알킬기로서는 상기 화학식 2에서 R1및 R2로 표시되는 탄소수 1 내지 8의 알킬기와 동일한 것을 들 수 있고, 또한 동일한 것이 바람직하다.In the above formulas (3) and (4), examples of the alkyl group having 1 to 8 carbon atoms represented by R 5 include the same as the alkyl group having 1 to 8 carbon atoms represented by R 1 and R 2 in the above formula (2), and are preferably the same. .
상기 화학식 4에 있어서, R6으로 표시되는 수산기로 치환될 수도 있는 탄소수 1 내지 4의 알킬렌기로서는, 예를 들면 메틸렌기, 에틸렌기, 트리메틸렌기, 2-히드록시트리메틸렌기, 1-메틸에틸렌기, 테트라메틸렌기, 1-메틸트리메틸렌기, 1,1-디메틸에틸렌기와 같은 탄소수 1 내지 4의 직쇄 또는 분지쇄상의 알킬렌기 및 수산기로 치환된 이들 기를 들 수 있다. 이들 중에서, 에틸렌기, 트리메틸렌기, 2-히드록시트리메틸렌기와 같은 탄소수 2 내지 3의 것이 바람직하다.In the above formula (4), examples of the alkylene group having 1 to 4 carbon atoms which may be substituted with a hydroxyl group represented by R 6 include, for example, a methylene group, an ethylene group, a trimethylene group, a 2-hydroxytrimethylene group, and 1-methyl. These groups substituted by C1-C4 linear or branched alkylene groups and hydroxyl groups, such as an ethylene group, a tetramethylene group, a 1-methyl trimethylene group, and a 1, 1- dimethylethylene group, are mentioned. Among them, those having 2 to 3 carbon atoms, such as ethylene group, trimethylene group and 2-hydroxy trimethylene group, are preferable.
본 발명에서는 상기 화학식 2 내지 4로 표시되는 방사선 흡수성기를 갖는 라디칼 중합성 화합물 중에서도, 화학식 2로 표시되는 방사선 흡수성기를 갖는 라디칼 중합성 화합물이 특히 바람직하게 사용된다.In the present invention, among the radically polymerizable compounds having a radiation absorbing group represented by the above formulas (2) to 4, a radically polymerizable compound having a radiation absorbing group represented by the formula (2) is particularly preferably used.
또한, 화학식 2로 표시되는 방사선 흡수성기를 갖는 라디칼 중합성 화합물 중에서도 R1이 수소 원자 또는 염소 원자로서 벤조트리아졸환의 5 위치에 치환되고, R2가 수소 원자, 메틸기 또는 탄소수 4 내지 8의 tert-알킬기 (바람직하게는 수소 원자, 메틸기 또는 tert-부틸기)이고, R3이 탄소수 2 내지 10 (바람직하게는 2 내지 3)인 알킬렌기이고, R4가 수소 원자 또는 메틸기인 방사선 흡수성기를 갖는 라디칼 중합성 화합물이 특히 바람직하다. 이러한 방사선 흡수성기를 갖는 라디칼 중합성 화합물의 구체적인 예로서는 예를 들면, 2-(2'-히드록시-5'-아크릴옥시에틸페닐)-2H-벤조트리아졸, 2-(2'-히드록시-5'-메타크릴옥시에틸페닐)-2H-벤조트리아졸, 2-(2'-히드록시-5'-메타크릴옥시프로필페닐)-2H-벤조트리아졸, 2-(2'-히드록시-5'-메타크릴옥시에틸페닐)-5-클로로-2H-벤조트리아졸, 2-(2'-히드록시-3'-tert-부틸-5'-메타크릴옥시에틸페닐)-5-클로로-2H-벤조트리아졸, 2-(2'-히드록시-3'-tert-부틸-5'-아크릴옥시에틸페닐)-2H-벤조트리아졸, 2-(2'-히드록시-5'-메타크릴옥시헥실페닐)-2H-벤조트리아졸, 2-(2'-히드록시-3'-tert-부틸-5'-메타크릴옥시에틸페닐)-2H-벤조트리아졸 등을 들 수 있다.In the radically polymerizable compound having a radiation absorbing group represented by the general formula (2), R 1 is substituted at the 5 position of the benzotriazole ring as a hydrogen atom or a chlorine atom, and R 2 is a hydrogen atom, a methyl group or a tert- having 4 to 8 carbon atoms. A radical having a radiation absorbing group which is an alkyl group (preferably a hydrogen atom, a methyl group or a tert-butyl group), R 3 is an alkylene group having 2 to 10 carbon atoms (preferably 2 to 3), and R 4 is a hydrogen atom or a methyl group Polymeric compounds are particularly preferred. As a specific example of the radically polymerizable compound which has such a radiation absorbing group, 2- (2'-hydroxy-5'-acryloxyethylphenyl) -2H-benzotriazole and 2- (2'-hydroxy-5) are mentioned, for example. '-Methacryloxyethylphenyl) -2H-benzotriazole, 2- (2'-hydroxy-5'-methacryloxypropylphenyl) -2H-benzotriazole, 2- (2'-hydroxy-5 '-Methacryloxyethylphenyl) -5-chloro-2H-benzotriazole, 2- (2'-hydroxy-3'-tert-butyl-5'-methacryloxyethylphenyl) -5-chloro-2H -Benzotriazole, 2- (2'-hydroxy-3'-tert-butyl-5'-acryloxyethylphenyl) -2H-benzotriazole, 2- (2'-hydroxy-5'-methacryl Oxyhexylphenyl) -2H-benzotriazole, 2- (2'-hydroxy-3'-tert-butyl-5'-methacryloxyethylphenyl) -2H-benzotriazole, etc. are mentioned.
이들 중, 특히 하기 화학식 5로 표시되는 2-(2'-히드록시-5'-메타크릴옥시에틸페닐)-2H-벤조트리아졸 (이하, 「단량체 (a2-1)」이라 하기도 함) 및 하기 화학식 6으로 표시되는 2-(2'-히드록시-3'-tert-부틸-5'-메타크릴옥시에틸페닐)-2H-벤조트리아졸 (이하, 「단량체 (a2-2)」라 하기도 함)이 바람직하게 사용된다. 본 발명에 있어서는, 방사선 흡수성 올레핀계 불포화 화합물은 1종 단독으로 또는 2종 이상 혼합하여 사용할 수 있다.Among these, 2- (2'-hydroxy-5'-methacryloxyethylphenyl) -2H-benzotriazole (hereinafter, also referred to as "monomer (a2-1)") represented by the following general formula (5), and Also referred to as 2- (2'-hydroxy-3'-tert-butyl-5'-methacryloxyethylphenyl) -2H-benzotriazole (hereinafter referred to as "monomer (a2-2)" represented by the following formula (6) Is preferably used. In this invention, a radiation absorbing olefin unsaturated compound can be used individually by 1 type or in mixture of 2 or more types.
본 발명에서 사용되는 공중합체 [A]는 상기한 바와 같이 화합물 (a1) 및 화합물 (a2)를 필수 성분으로 하는 단량체 혼합물의 공중합체이지만, 이 단량체 혼합물은 경우에 따라서 (a3) (a1) 및 (a2) 이외의 올레핀계 불포화 화합물 (이하, 「화합물 (a3)」이라 하기도 함)을 함유할 수가 있다.The copolymer [A] used in the present invention is a copolymer of a monomer mixture having the compound (a1) and the compound (a2) as essential components as described above, but the monomer mixture is optionally (a3) (a1) and Olefinic unsaturated compounds (henceforth "a compound (a3)" hereafter) other than (a2) can be contained.
이러한 화합물 (a3)을 화합물 (a1) 및 화합물 (a2)와 같이 공중합 성분으로서 사용함으로써 열경화성 조성물의 보존 안정성의 향상, 얻어지는 할레이션 방지막의 내열성의 향상 등의 이점이 얻어진다.By using such a compound (a3) as a copolymerization component like a compound (a1) and a compound (a2), the advantage of the improvement of the storage stability of a thermosetting composition, and the heat resistance of the antihalation film obtained is acquired.
본 발명의 공중합체 [A]는 화합물 (a3)으로부터 유도되는 구성 단위를 50 중량% 이하, 바람직하게는 40 중량% 이하 함유할 수가 있다.The copolymer [A] of the present invention may contain 50% by weight or less, preferably 40% by weight or less of the structural unit derived from the compound (a3).
이 구성 단위가 50 중량%를 초과하면 얻어지는 할레이션 방지막의 할레이션 방지 성능이나 내약품성이 부족할 경우가 있다.When this structural unit exceeds 50 weight%, the anti-halation performance and chemical-resistance of the obtained anti-halation film may be insufficient.
상기 (a3)의 올레핀계 불포화 화합물은 에폭시기 및 방사선 흡수성기를 갖지 않고, 또한 중합성 탄소-탄소 이중 결합을 갖는 화합물이고, 그 예로서는 메타크릴산알킬에스테르류, 아크릴산알킬에스테르류, 메타크릴산 환상 알킬에스테르류, 아크릴산 환상 알킬에스테르류, 메타크릴산아릴에스테르류, 아크릴산아릴에스테르류, 디카르복실산디에스테르류, 인덴 유도체, 디카르보닐이미드 유도체, 히드록시알킬에스테르류, 방향족 불포화 화합물류, 공액 디엔류, 그 밖의 불포화 화합물류를 들 수 있다.The olefinically unsaturated compound of (a3) is a compound which does not have an epoxy group and a radiation absorbing group and has a polymerizable carbon-carbon double bond, and examples thereof include alkyl methacrylates, alkyl acrylates, and methacrylic cyclic alkyls. Esters, acrylic cyclic alkyl esters, methacrylic acid aryl esters, acrylic aryl esters, dicarboxylic acid diesters, indene derivatives, dicarbonyl imide derivatives, hydroxyalkyl esters, aromatic unsaturated compounds, conjugated products Dienes and other unsaturated compounds may be mentioned.
그 구체적인 예로서는, 예를 들면 메타크릴산알킬에스테르류로서 메틸메타크릴레이트, 에틸메타크릴레이트, n-부틸메타크릴레이트, sec-부틸메타크릴레이트,t-부틸메타크릴레이트 등;Specific examples thereof include, for example, methyl methacrylate, ethyl methacrylate, n-butyl methacrylate, sec-butyl methacrylate, t-butyl methacrylate and the like as methacrylic acid alkyl esters;
아크릴산알킬에스테르류로서 메틸아크릴레이트, 이소프로필아크릴레이트 등;As alkyl acrylate ester, methyl acrylate, isopropyl acrylate, etc .;
메타크릴산 환상 알킬에스테르류로서 시클로헥실메타크릴레이트, 2-메틸시클로헥실메타크릴레이트, 메타크릴산시클로헥실, 메타크릴산트리시클로[5.2.1.02,6]데칸-8-일 (이 기술 분야에서 관용명으로서 메타크릴산디시클로펜타닐이라 불림), 디시클로펜타닐옥시에틸메타크릴레이트, 이소보로닐메타크릴레이트 등;As methacrylic acid cyclic alkyl esters, cyclohexyl methacrylate, 2-methylcyclohexyl methacrylate, cyclohexyl methacrylate, tricyclo [5.2.1.0 2,6 ] decane-8-yl (this technology Commonly used in the art as dicyclopentanyl methacrylate), dicyclopentanyloxyethyl methacrylate, isoboroyl methacrylate, and the like;
아크릴산 환상 알킬에스테르류로서 시클로헥실아크릴레이트, 2-메틸시클로헥실아크릴레이트, 아크릴산시클로헥실, 아크릴산트리시클로[5.2.1.02,6]데칸-8-일 (이 기술 분야에서 관용명으로서 아크릴산디시클로펜타닐이라 불림), 디시클로펜타닐옥시에틸아크릴레이트, 이소보로닐아크릴레이트 등;Cyclohexyl acrylate, 2-methylcyclohexyl acrylate, cyclohexyl acrylate, tricyclo [5.2.1.0 2,6 ] decane-8-yl (acrylamide dicyclopentanyl as conventional name in the art) Called dicyclopentanyloxyethyl acrylate, isoboroyl acrylate, etc .;
메타크릴산아릴에스테르류로서 페닐메타크릴레이트, 벤질메타크릴레이트 등;As methacrylic acid aryl ester, Phenyl methacrylate, benzyl methacrylate, etc .;
아크릴산아릴에스테르류로서 페닐아크릴레이트, 벤질아크릴레이트 등;As acrylic acid aryl ester, Phenyl acrylate, Benzyl acrylate, etc .;
디카르복실산디에스테르류로서 말레산디에틸, 푸마르산디에틸, 이타콘산디에틸 등;Diethyl maleate, diethyl fumarate, diethyl itaconate, etc. as dicarboxylic acid diesters;
인덴 유도체로서 인덴, 1-메틸인덴 등;Indene derivatives, such as indene, 1-methylindene;
디카르보닐이미드 유도체로서 페닐말레이미드, 벤질말레이미드, 시클로헥실말레이미드, N-숙신이미딜-3-말레이미드벤조에이트, N-숙신이미딜-4-말레이미드부틸레이트, N-숙신이미딜-6-말레이미드카프로에이트, N-숙신이미딜-3-말레이미드프로피오네이트, N-(9-아크리딜)말레이미드 등;As dicarbonylimide derivatives, phenylmaleimide, benzylmaleimide, cyclohexyl maleimide, N-succinimidyl-3-maleimide benzoate, N-succinimidyl-4-maleimide butyrate, N-succinimi Di--6-maleimide caproate, N-succinimidyl-3-maleimide propionate, N- (9-acridyl) maleimide and the like;
히드록시알킬에스테르류로서 2-히드록시에틸메타크릴레이트, 2-히드록시프로필메타크릴레이트 등;2-hydroxyethyl methacrylate, 2-hydroxypropyl methacrylate, etc. as hydroxyalkyl esters;
방향족 불포화 화합물류로서 스티렌, α-메틸스티렌, m-메틸스티렌, p-메틸스티렌, 비닐톨루엔, p-메톡시스티렌 등;As aromatic unsaturated compounds, styrene, (alpha) -methylstyrene, m-methylstyrene, p-methylstyrene, vinyltoluene, p-methoxy styrene, etc .;
공액 디엔류로서 1,3-부타디엔, 이소프렌, 2,3-디메틸-1,3-부타디엔등;1,3-butadiene, isoprene, 2,3-dimethyl-1,3-butadiene and the like as conjugated dienes;
그 밖의 불포화 화합물류로서 아크릴로니트릴, 메타크릴로니트릴, 염화비닐, 염화비닐리덴, 아크릴아미드, 메타크릴아미드, 아세트산비닐 등을 각각 들 수 있다.As other unsaturated compounds, acrylonitrile, methacrylonitrile, vinyl chloride, vinylidene chloride, acrylamide, methacrylamide, vinyl acetate, etc. are mentioned, respectively.
이들 중에서 메타크릴산알킬에스테르류, 메타크릴산 환상 알킬에스테르류, 아크릴산 환상 알킬에스테르류, 방향족 불포화 화합물류, 공액 디엔류, 디카르보닐이미드 유도체가 바람직하게 사용되고, 특히 스티렌, t-부틸메타크릴레이트, 메타크릴산디시클로펜타닐, p-메톡시스티렌, 2-메틸시클로헥실아크릴레이트, 1,3-부타디엔, 페닐말레이미드, 시클로헥실말레이미드가 공중합 반응성 및 얻어지는 할레이션 방지막의 내열성의 관점에서 바람직하다.Of these, methacrylic acid alkyl esters, methacrylic acid cyclic alkyl esters, acrylic acid cyclic alkyl esters, aromatic unsaturated compounds, conjugated dienes, and dicarbonyl imide derivatives are preferably used, and in particular, styrene and t-butyl meta From the viewpoint of the copolymerization reactivity and the heat resistance of the anti-halation film obtained, acrylate, dicyclopentanyl methacrylate, p-methoxystyrene, 2-methylcyclohexyl acrylate, 1,3-butadiene, phenylmaleimide and cyclohexyl maleimide are obtained. desirable.
이러한 화합물 (a3)은 단독으로 또는 조합하여 사용된다.These compounds (a3) are used alone or in combination.
본 발명에서 사용되는 공중합체 [A]의 바람직한 구체적인 예로서는 예를 들면, 메타크릴산글리시딜/단량체 (a2-1) 공중합체, 메타크릴산글리시딜/단량체 (a2-1)/스티렌 공중합체, 메타크릴산글리시딜/단량체 (a2-1)/메타크릴산트리시클로[5.2.1.O2,6]데칸-8-일 공중합체, 메타크릴산글리시딜/단량체 (a2-1)/스티렌/메타크릴산트리시클로[5.2.1.02,6]데칸-8-일 공중합체, 메타크릴산글리시딜/단량체 (a2-1)/스티렌/시클로헥실말레이미드 공중합체, 메타크릴산글리시딜/단량체 (a2-1)/스티렌/페닐말레이미드 공중합체, 메타크릴산글리시딜/단량체 (a2-2) 공중합체, 메타크릴산글리시딜/단량체 (a2-2)/스티렌 공중합체, 메타크릴산글리시딜/단량체 (a2-2)/메타크릴산트리시클로[5.2.1.O2,6]데칸-8-일 공중합체, 메타크릴산글리시딜/단량체 (a2-2)/스티렌/메타크릴산트리시클로[5.2.1.02,6]데칸-8-일 공중합체, 메타크릴산글리시딜/단량체 (a2-2)/스티렌/시클로헥실말레이미드 공중합체, 메타크릴산글리시딜/단량체 (a2-2)/스티렌/페닐말레이미드 공중합체 등을 들 수 있다.Preferable specific examples of the copolymer [A] used in the present invention include, for example, methacrylate glycidyl / monomer (a2-1) copolymer, methacrylate glycidyl / monomer (a2-1) / styrene air. Copolymer, glycidyl methacrylate / monomer (a2-1) / methacrylate tricyclo [5.2.1.O 2,6 ] decane-8-yl copolymer, glycidyl methacrylate / monomer (a2- 1) / styrene / trimethyl methacrylate [5.2.1.0 2,6 ] decane-8-yl copolymer, glycidyl methacrylate / monomer (a2-1) / styrene / cyclohexylmaleimide copolymer, meta Glycidyl acrylate / monomer (a2-1) / styrene / phenylmaleimide copolymer, glycidyl methacrylate / monomer (a2-2) copolymer, glycidyl methacrylate / monomer (a2-2) / Styrene copolymer, glycidyl methacrylate / monomer (a2-2) / tricyclo methacrylate [5.2.1.O 2,6 ] decane-8-yl copolymer, glycidyl methacrylate / monomer (a2-2) / styrene / methacrylate tricyclo [5.2.1 .0 2,6 ] decane-8-yl copolymer, methacrylate glycidyl / monomer (a2-2) / styrene / cyclohexylmaleimide copolymer, methacrylate glycidyl / monomer (a2-2) / Styrene / phenylmaleimide copolymer, etc. are mentioned.
본 발명에서 사용되는 공중합체 [A]의 폴리스테렌 환산 중량 평균 분자량 ( 이하, 「Mw」라 함)은 바람직하게는 2×103내지 5×105, 보다 바람직하게는 5×103내지 1×105이다. Mw가 2×103미만이면 얻어지는 할레이션 방지막은 내열성, 표면 경도가 불충분해지는 경우가 있다. 한편, 5×1O5을 초과하면 막 표면의 평탄성이 불충분해지는 경우가 있다.The weight average molecular weight (hereinafter referred to as "Mw") of the copolymer [A] used in the present invention is preferably 2 × 10 3 to 5 × 10 5 , more preferably 5 × 10 3 to 1 × 10 5 . If Mw is less than 2x10 <3>, the antihalation film obtained may become inadequate in heat resistance and surface hardness. On the other hand, when it exceeds 5 * 10 <5> , the flatness of a film surface may become inadequate.
본 발명에서 사용되는 공중합체 [A]는 상기 화합물 (a1) 및 화합물 (a2) 및 필요에 따라서 화합물 (a3)을 함유하는 단량체 혼합물을 바람직하게는 용매 중에서 중합 개시제의 존재하에서 라디칼 중합시킴으로써 합성할 수가 있다.The copolymer [A] used in the present invention is synthesized by radically polymerizing the monomer mixture containing the compound (a1) and the compound (a2) and, if necessary, the compound (a3) in the presence of a polymerization initiator in a solvent. There is a number.
공중합체 [A]의 제조에 사용되는 용매로서는, 예를 들면 알코올류, 에테르류, 글리콜에테르류, 에틸렌글리콜알킬에테르아세테이트류, 디에틸렌글리콜류, 프로필렌글리콜모노알킬에테르류, 프로필렌글리콜알킬에테르아세테이트류, 프로필렌글리콜알킬에테르프로피오네이트류, 방향족 탄화수소류, 케톤류, 에스테르류 등을 들 수 있다.As a solvent used for manufacture of copolymer [A], alcohol, ether, glycol ether, ethylene glycol alkyl ether acetate, diethylene glycol, propylene glycol monoalkyl ether, propylene glycol alkyl ether acetate, for example And propylene glycol alkyl ether propionates, aromatic hydrocarbons, ketones, esters and the like.
이들의 구체적인 예로서는, 예를 들면 알코올류로서 메탄올, 에탄올 등;As these specific examples, For example, methanol, ethanol, etc. as alcohols;
에테르류로서 테트라히드로푸란 등;Tetrahydrofuran etc. as ethers;
글리콜에테르류로서 에틸렌글리콜모노메틸에테르, 에틸렌글리콜모노에틸에테르 등;Ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, etc. as glycol ethers;
에틸렌글리콜알킬에테르아세테이트류로서 메틸셀로솔브아세테이트, 에틸셀로솔브아세테이트 등;As ethylene glycol alkyl ether acetates, methyl cellosolve acetate, ethyl cellosolve acetate, etc .;
디에틸렌글리콜류로서 디에틸렌글리콜모노메틸에테르, 디에틸렌글리콜모노에틸에테르, 디에틸렌글리콜디메틸에테르, 디에틸렌글리콜디에틸에테르, 디에틸렌글리콜에틸메틸에테르 등;Diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol ethyl methyl ether, etc. as diethylene glycol;
프로필렌글리콜모노알킬에테르류로서 프로필렌글리콜모노메틸에테르, 프로필렌글리콜모노에틸에테르, 프로필렌글리콜모노프로필에테르, 프로필렌글리콜모노부틸에테르 등;Propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether and the like as propylene glycol monoalkyl ethers;
프로필렌글리콜알킬에테르아세테이트류로서 프로필렌글리콜모노메틸에테르아세테이트, 프로필렌글리콜에틸에테르아세테이트, 프로필렌글리콜프로필에테르아세테이트, 프로필렌글리콜부틸에테르아세테이트 등;Propylene glycol monomethyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate, propylene glycol butyl ether acetate and the like as propylene glycol alkyl ether acetates;
프로필렌글리콜알킬에테르프로피오네이트류로서 프로필렌글리콜메틸에테르프로피오네이트, 프로필렌글리콜에틸에테르프로피오네이트, 프로필렌글리콜프로필에테르프로피오네이트, 프로필렌글리콜부틸에테르프로피오네이트 등;As propylene glycol alkyl ether propionates, propylene glycol methyl ether propionate, propylene glycol ethyl ether propionate, propylene glycol propyl ether propionate, propylene glycol butyl ether propionate, etc .;
방향족 탄화수소류로서 톨루엔, 크실렌 등;Toluene, xylene and the like as the aromatic hydrocarbons;
케톤류로서 메틸에틸케톤, 시클로헥사논, 4-히드록시-4-메틸-2-펜타논 등;Methyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone, etc. as ketones;
에스테르류로서 아세트산메틸, 아세트산에틸, 아세트산프로필, 아세트산부틸, 2-히드록시프로피온산에틸, 2-히드록시-2-메틸프로피온산메틸, 2-히드록시-2-메틸프로피온산에틸, 히드록시아세트산메틸, 히드록시아세트산에틸, 히드록시아세트산부틸, 락트산메틸, 락트산에틸, 락트산프로필, 락트산부틸, 3-히드록시프로피온산메틸, 3-히드록시프로피온산에틸, 3-히드록시프로피온산프로필, 3-히드록시프로피온산부틸, 2-히드록시-3-메틸부탄산메틸, 메톡시아세트산메틸, 메톡시아세트산에틸, 메톡시아세트산프로필, 메톡시아세트산부틸, 에톡시아세트산메틸, 에톡시아세트산에틸, 에톡시아세트산프로필, 에톡시아세트산부틸, 프로폭시아세트산메틸, 프로폭시아세트산에틸, 프로폭시아세트산프로필, 프로폭시아세트산부틸, 부톡시아세트산메틸, 부톡시아세트산에틸, 부톡시아세트산프로필, 부톡시아세트산부틸, 2-메톡시프로피온산메틸, 2-메톡시프로피온산에틸, 2-메톡시프로피온산프로필, 2-메톡시프로피온산부틸, 2-에톡시프로피온산메틸, 2-에톡시프로피온산에틸, 2-에톡시프로피온산프로필, 2-에톡시프로피온산부틸, 2-부톡시프로피온산메틸, 2-부톡시프로피온산에틸, 2-부톡시프로피온산프로필, 2-부톡시프로피온산부틸, 3-메톡시프로피온산메틸, 3-메톡시프로피온산에틸, 3-메톡시프로피온산프로필, 3-메톡시프로피온산부틸, 3-에톡시프로피온산메틸, 3-에톡시프로피온산에틸, 3-에톡시프로피온산프로필, 3-에톡시프로피온산부틸, 3-프로폭시프로피온산메틸, 3-프로폭시프로피온산에틸, 3-프로폭시프로피온산프로필, 3-프로폭시프로피온산부틸, 3-부톡시프로피온산메틸, 3-부톡시프로피온산에틸, 3-부톡시프로피온산프로필, 3-부톡시프로피온산부틸 등의 에스테르류를 각각 들 수 있다.As esters, methyl acetate, ethyl acetate, propyl acetate, butyl acetate, ethyl 2-hydroxypropionate, methyl 2-hydroxy-2-methylpropionate, ethyl 2-hydroxy-2-methylpropionate, methyl hydroxyacetate, and hydroxy Ethyl hydroxy acetate, butyl hydroxy acetate, methyl lactate, ethyl lactate, propyl lactate, butyl lactate, methyl 3-hydroxypropionate, ethyl 3-hydroxypropionate, 3-hydroxypropionate, butyl 3-hydroxypropionate, 2 Methyl hydroxy-3-methyl butyrate, methyl methoxy acetate, ethyl methoxy acetate, methoxy acetate propyl, butyl butyl acetate, ethoxy acetate, ethoxy acetate, ethoxy acetate, ethoxy acetate Methyl propoxy acetate, ethyl propoxy acetate, propyl propoxy acetate, butyl propoxy acetate, methyl butoxy acetate, butoxy Ethyl acetate, propyl butoxy acetate, butyl butoxy acetate, methyl 2-methoxypropionate, ethyl 2-methoxypropionate, propyl 2-methoxypropionate, butyl 2-methoxypropionate, methyl 2-ethoxypropionate, 2 Ethyl ethoxypropionate, propyl 2-ethoxypropionate, butyl 2-ethoxypropionate, methyl 2-butoxypropionate, ethyl 2-butoxypropionate, propyl 2-butoxypropionate, butyl 2-butoxypropionate, 3- Methyl methoxypropionate, 3-methoxy ethylpropionate, 3-methoxy propylpropionate, 3-methoxy propylpropionate, 3-ethoxypropionate methyl, 3-ethoxypropionate, 3-ethoxypropionate, 3-e Butyl oxypropionate, 3-propoxy methyl propionate, 3-propoxy propionate, 3-propoxy propionate, 3-butyl propoxypropionate, 3-butoxy methyl propionate, 3-butoxy ethyl propionate, 3-part When acid profile, may be mentioned esters such as butyl-3-butoxy-propionic acid, respectively.
이들 중에서, 에틸렌글리콜알킬에테르아세테이트류, 디에틸렌글리콜류, 프로필렌글리콜모노알킬에테르류, 프로필렌글리콜알킬에테르아세테이트류가 바람직하고, 특히 디에틸렌글리콜디메틸에테르, 디에틸렌글리콜에틸메틸에테르, 프로필렌글리콜모노메틸에테르, 프로필렌글리콜모노메틸에테르아세테이트가 바람직하다.Among these, ethylene glycol alkyl ether acetates, diethylene glycols, propylene glycol monoalkyl ethers and propylene glycol alkyl ether acetates are preferable, and in particular, diethylene glycol dimethyl ether, diethylene glycol ethyl methyl ether, and propylene glycol monomethyl Ether and propylene glycol monomethyl ether acetate are preferable.
공중합체 [A]의 제조에 사용되는 중합 개시제로서는 일반적으로 라디칼 중합 개시제로서 알려져 있는 것을 사용할 수 있고, 예를 들면 2,2'-아조비스이소부티로니트릴, 2,2'-아조비스-(2,4-디메틸발레로니트릴), 2,2'-아조비스-(4-메톡시-2,4-디메틸바렐로니트릴) 등의 아조 화합물; 벤조일퍼옥시드, 라우로일퍼옥시드, t-부틸퍼옥시피발레이트, 1,1'-비스-(t-부틸퍼옥시)시클로헥산 등의 유기 과산화물; 및 과산화수소를 들 수 있다. 라디칼 중합 개시제로서 과산화물을 사용하는 경우에는 과산화물을 환원제와 함께 사용하여 산화환원형 개시제로 할 수도 있다.As a polymerization initiator used for manufacture of copolymer [A], what is generally known as a radical polymerization initiator can be used, For example, 2,2'- azobisisobutyronitrile, 2,2'- azobis- ( Azo compounds such as 2,4-dimethylvaleronitrile) and 2,2'-azobis- (4-methoxy-2,4-dimethylbarellonitrile); Organic peroxides such as benzoyl peroxide, lauroyl peroxide, t-butylperoxy pivalate, 1,1'-bis- (t-butylperoxy) cyclohexane; And hydrogen peroxide. When using a peroxide as a radical polymerization initiator, it can also be set as a redox type initiator by using a peroxide together with a reducing agent.
공중합체 [A]의 제조에 있어서는, 분자량을 조정하기 위해서 분자량 조정제를 사용할 수가 있다. 그 구체적인 예로서는 클로로포름, 사브롬화탄소 등의 할로겐화 탄화수소류; n-헥실머캅탄, n-옥틸머캅탄, n-도데실머캅탄, tert-도데실머캅탄, 티오글리콜산 등의 머캅탄류; 디메틸크산토겐술피드, 디이소프로필크산토겐디술피드 등의 크산토겐류; 타피노렌, α-메틸스티렌 이량체 등을 들 수 있다.In manufacture of copolymer [A], in order to adjust molecular weight, a molecular weight modifier can be used. Specific examples thereof include halogenated hydrocarbons such as chloroform and carbon tetrabromide; mercaptans such as n-hexyl mercaptan, n-octyl mercaptan, n-dodecyl mercaptan, tert-dodecyl mercaptan and thioglycolic acid; Xanthogens such as dimethyl xanthogen sulfide and diisopropyl xanthogen disulfide; Tapinene, (alpha) -methylstyrene dimer, etc. are mentioned.
[B] 성분[B] component
본 발명에서 사용되는 [B] 다가 카르복실산 무수물 및 다가 카르복실산으로 이루어지는 군에서 선택되는 1종 이상의 화합물은 공중합체 [A]에 대하여 경화제로서 작용하는 것이다. [B] 성분으로서는 다가 카르복실산 무수물이 바람직하다.The at least 1 sort (s) of compound chosen from the group which consists of [B] polyhydric carboxylic anhydride and polyhydric carboxylic acid used by this invention act as a hardening | curing agent with respect to copolymer [A]. As the component (B), polyhydric carboxylic anhydride is preferable.
상기 다가 카르복실산으로서는, 예를 들면 지방족 다가 카르복실산류, 지환족 다가 카르복실산류, 방향족 다가 카르복실산류를 들 수 있다.As said polyhydric carboxylic acid, aliphatic polyhydric carboxylic acid, alicyclic polyhydric carboxylic acid, and aromatic polyhydric carboxylic acid are mentioned, for example.
이들의 구체적인 예로서는, 예를 들면 지방족 다가 카르복실산류로서 숙신산, 글루타르산, 아디프산, 부탄테트라카르복실산, 말레산, 이타콘산 등;Specific examples thereof include, for example, succinic acid, glutaric acid, adipic acid, butanetetracarboxylic acid, maleic acid, itaconic acid, and the like as aliphatic polyvalent carboxylic acids;
지환족 다가 카르복실산류로서 헥사히드로프탈산, 1,2-시클로헥산디카르복실산, 1,2,4-시클로헥산트리카르복실산, 시클로펜탄테트라카르복실산 등;As alicyclic polyhydric carboxylic acids, hexahydrophthalic acid, 1,2-cyclohexanedicarboxylic acid, 1,2,4-cyclohexanetricarboxylic acid, cyclopentanetetracarboxylic acid, etc .;
방향족 다가 카르복실산류로서 프탈산, 이소프탈산, 테레프탈산, 트리멜리트산, 피로멜리트산, 1,2,5,8-나프탈렌테트라카르복실산 등을 각각 들 수 있다. 이들 중에서는 형성되는 할레이션 방지막의 내열성 등의 관점에서 방향족 다가 카르복실산이 바람직하고, 특히 트리멜리트산은 내열성이 높은 할레이션 방지막이 얻어진다는 점에서 바람직하다.Phthalic acid, isophthalic acid, terephthalic acid, trimellitic acid, pyromellitic acid, 1,2,5,8-naphthalenetetracarboxylic acid, etc. are mentioned as aromatic polyhydric carboxylic acids, respectively. In these, aromatic polyhydric carboxylic acid is preferable from a viewpoint of the heat resistance etc. of the anti-halation film formed, and trimellitic acid is especially preferable at the point that a high anti-halation film is obtained.
상기 다가 카르복실산 무수물로서는, 예를 들면 지방족 디카르복실산 무수물, 지환족 다가 카르복실산 이무수물, 방향족 다가 카르복실산 무수물 및 에스테르기 함유 산 무수물 및 불포화 다가 카르복실산 무수물과 올레핀계 불포화 화합물과의 공중합체를 들 수 있다.As said polyhydric carboxylic anhydride, aliphatic dicarboxylic anhydride, alicyclic polyhydric carboxylic dianhydride, aromatic polyhydric carboxylic anhydride, ester group containing acid anhydride, and unsaturated polycarboxylic dianhydride, and olefinic unsaturated, for example The copolymer with a compound is mentioned.
이들의 구체적인 예로서는, 예를 들면 지방족 디카르복실산 무수물로서 이타콘산 무수물, 무수 숙신산, 무수 시트라콘산, 무수 도데세닐숙신산, 무수 트리카르바닐산, 무수 말레산, 무수 헥사히드로프탈산, 무수 메틸테트라히드로프탈산, 무수 하이믹산 등;Specific examples thereof include, for example, itaconic anhydride, succinic anhydride, citraconic anhydride, dodecenyl succinic anhydride, tricarbanic anhydride, maleic anhydride, hexahydrophthalic anhydride, and methyltetra anhydride as aliphatic dicarboxylic anhydrides. Hydrophthalic acid, hymic anhydride, and the like;
지환족 다가 카르복실산 이무수물로서 1,2,3,4-부탄테트라카르복실산 이무수물, 시클로펜탄테트라카르복실산 이무수물 등;As an alicyclic polyhydric carboxylic dianhydride, 1,2,3,4- butane tetracarboxylic dianhydride, cyclopentane tetracarboxylic dianhydride, etc .;
방향족 다가 카르복실산 무수물로서 무수 프탈산, 무수 피로멜리트산, 무수 트리멜리트산, 무수 벤조페논테트라카르복실산 등;Phthalic anhydride, pyromellitic anhydride, trimellitic anhydride, benzophenonetetracarboxylic acid anhydride and the like as the aromatic polyhydric carboxylic anhydride;
에스테르기 함유 산 무수물로서 에틸렌글리콜비스 무수 트리멜리테이트, 글리세린트리스 무수 트리멜리테이트 등을 각각 들 수 있다.As ester group containing acid anhydride, ethylene glycol bis anhydride trimellitate, glycerine tris anhydride trimellitate, etc. are mentioned, respectively.
이들 중에서, 방향족 다가 카르복실산 무수물이 바람직하고, 특히 무수 트리멜리트산은 내열성이 높은 할레이션 방지막이 얻어진다는 점에서 바람직하다.Among these, aromatic polyhydric carboxylic acid anhydride is preferable, and trimellitic anhydride is particularly preferable in that a high anti-halation film is obtained.
상기 불포화 다가 카르복실산 무수물과 올레핀계 불포화 화합물과의 공중합체를 합성하기 위해서 사용되는 불포화 다가 카르복실산 무수물로서는, 예를 들면 무수 이타콘산, 무수 시트라콘산, 무수 말레산, 시스1,2,3,4-테트라히드로프탈산 무수물 등의 군에서 선택되는 불포화 다가 카르복실산 무수물의 1종 이상을 들 수 있다.As unsaturated polyhydric carboxylic anhydride used for synthesize | combining the copolymer of the said unsaturated polyhydric carboxylic anhydride and an olefinic unsaturated compound, itaconic anhydride, a citraconic anhydride, a maleic anhydride, a cis 1,2, for example 1 or more types of unsaturated polyhydric carboxylic anhydride selected from the group, such as a 3, 4- tetrahydro phthalic anhydride, are mentioned.
또한 불포화 다가 카르복실산 무수물과 올레핀계 불포화 화합물과의 공중합체를 합성하기 위해서 사용되는 올레핀계 불포화 화합물로서는, 예를 들면 스티렌, p-메틸스티렌, p-메톡시스티렌, 메틸메타크릴레이트, t-부틸메타크릴레이트, 메타크릴산트리시클로[5.2.1.O2,6]데칸-8-일, 2-메틸시클로헥실아크릴레이트, 페닐말레이미드, 시클로헥실 등의 군에서 선택되는 올레핀계 불포화 화합물의 1종 이상을 들 수 있다.Moreover, as an olefinic unsaturated compound used in order to synthesize | combine the copolymer of unsaturated polyhydric carboxylic anhydride and an olefinic unsaturated compound, For example, styrene, p-methylstyrene, p-methoxy styrene, methyl methacrylate, t Butyl methacrylate, methacrylate tricyclo [5.2.1.O 2,6 ] decane-8-yl, 2-methylcyclohexyl acrylate, phenylmaleimide, cyclohexyl, etc. 1 or more types of compound are mentioned.
불포화 다가 카르복실산 무수물과 올레핀계 불포화 화합물과의 공중합체 중에 함유되는 불포화 다가 카르복실산 무수물로부터 유도되는 구성 단위의 양은 바람직하게는 1 내지 80 중량%, 더욱 바람직하게는 10 내지 60 중량%이다.The amount of the structural unit derived from the unsaturated polyvalent carboxylic anhydride contained in the copolymer of the unsaturated polyvalent carboxylic anhydride and the olefinically unsaturated compound is preferably 1 to 80% by weight, more preferably 10 to 60% by weight. .
또한 불포화 다가 카르복실산 무수물과 올레핀계 불포화 화합물과의 공중합체의 폴리스티렌 환산 중량 평균 분자량은 바람직하게는 500 내지 50,000, 더욱 바람직하게는 500 내지 10,000이다.The polystyrene reduced weight average molecular weight of the copolymer of unsaturated polyhydric carboxylic anhydride and olefinically unsaturated compound is preferably 500 to 50,000, more preferably 500 to 10,000.
불포화 다가 카르복실산 무수물과 올레핀계 불포화 화합물은 상기한 공중합체 [A]와 동일한 방법에 의해 합성할 수가 있다.An unsaturated polyhydric carboxylic anhydride and an olefinic unsaturated compound can be synthesize | combined by the method similar to above-mentioned copolymer [A].
[B] 성분의 사용 비율은 공중합체 [A] 100 중량부에 대하여 바람직하게는 3 내지 30 중량부, 보다 바람직하게는 3 내지 15 중량부이다. [B] 성분의 비율이 3 중량부 미만인 경우에는 얻어지는 할레이션 방지막의 각종 내성이 불충분해지는 경우가 있다. 한편, [B] 성분의 비율이 30 중량부를 초과할 경우에는 얻어지는 할레이션 방지막의 기판에 대한 밀착성이 불충분해지는 경우가 있다.The use ratio of the component [B] is preferably 3 to 30 parts by weight, more preferably 3 to 15 parts by weight based on 100 parts by weight of the copolymer [A]. When the ratio of the component (B) is less than 3 parts by weight, the various resistances of the anti-halation film obtained may be insufficient. On the other hand, when the ratio of component [B] exceeds 30 weight part, the adhesiveness with respect to the board | substrate of the antihalation film obtained may become inadequate.
<그 밖의 성분><Other ingredients>
본 발명의 경화성 조성물은 상술한 공중합체 [A] 및 [B] 성분을 필수 성분으로 하는 것이지만 필요에 따라서 그 밖의 성분을 함유할 수가 있다. 이러한 그 밖의 성분으로서는 예를 들면 접착 조제, 경화 촉진제, 계면활성제, 자외선 흡수제 등을 들 수 있다.Although the curable composition of this invention makes the above-mentioned copolymer [A] and [B] components an essential component, it can contain another component as needed. As such another component, an adhesion | attachment adjuvant, a hardening accelerator, surfactant, a ultraviolet absorber, etc. are mentioned, for example.
[접착 조제][Adhesive preparation]
접착 조제는 형성되는 할레이션 방지막과 기판과의 밀착성을 향상시키기 위해서 첨가할 수가 있다.An adhesive aid can be added in order to improve the adhesiveness of the anti-halation film | membrane formed to a board | substrate.
이러한 접착 조제로서는, 예를 들면 카르복실기, 메타크릴로일기, 이소시아네이트기, 에폭시기 등의 반응성 치환기를 갖는 관능성 실란 커플링제가 바람직하게 사용된다. 구체적으로는 트리메톡시실릴벤조산, γ-메타크릴옥시프로필트리메톡시실란, 비닐트리아세톡시실란, 비닐트리메톡시실란, γ-이소시아네이트프로필트리에톡시실란, γ-글리시독시프로필트리메톡시실란, β-(3,4-에폭시시클로헥실)에틸트리메톡시실란 등을 들 수 있다.As this adhesion | attachment adjuvant, the functional silane coupling agent which has reactive substituents, such as a carboxyl group, a methacryloyl group, an isocyanate group, an epoxy group, is used preferably, for example. Specifically, trimethoxysilylbenzoic acid, γ-methacryloxypropyltrimethoxysilane, vinyltriacetoxysilane, vinyltrimethoxysilane, γ-isocyanatepropyltriethoxysilane, γ-glycidoxypropyltrimethoxy Silane, (beta)-(3,4-epoxycyclohexyl) ethyltrimethoxysilane, etc. are mentioned.
접착 조제의 사용 비율은, 바람직하게는 공중합체 [A] 100 중량부에 대하여 30 중량부 이하, 보다 바람직하게는 0.1 내지 25 중량부, 특히 바람직하게는 1 내지 20 중량부이다. 접착 조제의 사용 비율이 100 중량부를 초과하면 얻어지는 할레이션 방지막의 내열성이 불충분해지는 경우가 있다.The use ratio of the adhesion aid is preferably 30 parts by weight or less, more preferably 0.1 to 25 parts by weight, particularly preferably 1 to 20 parts by weight based on 100 parts by weight of the copolymer [A]. When the use ratio of the adhesion assistant exceeds 100 parts by weight, the heat resistance of the anti-halation film obtained may be insufficient.
[경화 촉진제][Hardening accelerator]
경화 촉진제는 공중합체 [A] 및 [B] 성분과의 반응을 촉진시키기 위해서 첨가할 수가 있다. 이러한 경화 촉진제로서는 예를 들면 2급 질소 원자 또는 3급 질소 원자를 포함하는 헤테로환 구조를 갖는 화합물을 들 수 있다.A hardening accelerator can be added in order to accelerate reaction with copolymer [A] and [B] component. As such a hardening accelerator, the compound which has a heterocyclic structure containing a secondary nitrogen atom or a tertiary nitrogen atom is mentioned, for example.
이러한 화합물의 구체적인 예로서는 피롤, 이미다졸, 피라졸, 피리딘, 피라진, 피리미딘, 인돌, 인다졸, 벤즈이미다졸 혹은 이소시아누르산 또는 이들의 유도체 등을 들 수 있다. 이들 중에서도 2-메틸이미다졸, 2-에틸-4-메틸이미다졸, 2-헵타데실이미다졸, 4-메틸-2-페닐이미다졸, 1-벤질-2-메틸이미다졸, 2-에틸-4-메틸-1-(2'-시아노에틸)이미다졸, 2-에틸-4-메틸-1-[2'-(3",5"-디아미노트리아지닐)에틸]이미다졸, 벤즈이미다졸 등의 이미다졸 유도체가 바람직하고, 가장 바람직하게는 2-에틸-4-메틸이미다졸, 4-메틸-2-페닐이미다졸, 1-벤질-2-메틸이미다졸 등이 사용된다.Specific examples of such compounds include pyrrole, imidazole, pyrazole, pyridine, pyrazine, pyrimidine, indole, indazole, benzimidazole or isocyanuric acid or derivatives thereof. Among these, 2-methylimidazole, 2-ethyl-4-methylimidazole, 2-heptadecylimidazole, 4-methyl-2-phenylimidazole, 1-benzyl-2-methylimidazole, 2-ethyl-4-methyl-1- (2'-cyanoethyl) imidazole, 2-ethyl-4-methyl-1- [2 '-(3 ", 5" -diaminotriazinyl) ethyl] imi Preferred imidazole derivatives, such as dazole and benzimidazole, are most preferably 2-ethyl-4-methylimidazole, 4-methyl-2-phenylimidazole and 1-benzyl-2-methylimidazole. Etc. are used.
이들 화합물은 단독으로 또는 2종 이상을 조합하여 경화 촉진제로서 사용할 수 있다.These compounds can be used individually or in combination of 2 or more types as a hardening accelerator.
경화 촉진제는 공중합체 [A] 100 중량부에 대하여 바람직하게는 5 중량부 이하, 보다 바람직하게는 1 중량부 이하의 비율로 사용된다.The hardening accelerator is preferably used in a proportion of 5 parts by weight or less, more preferably 1 part by weight or less based on 100 parts by weight of the copolymer [A].
[계면활성제][Surfactants]
계면활성제는 조성물의 도포성을 향상하기 위해서 첨가할 수가 있다.Surfactant can be added in order to improve the applicability | paintability of a composition.
이러한 계면활성제로서는, 예를 들면 불소계 계면활성제, 실리콘계 계면활성제, 비이온계 계면활성제 등을 들 수 있다.As such surfactant, a fluorochemical surfactant, silicone type surfactant, nonionic surfactant, etc. are mentioned, for example.
상기 비이온계 계면활성제로서는, 예를 들면 폴리옥시에틸렌알킬에테르류, 폴리옥시에틸렌아릴에테르류, 폴리옥시에틸렌디알킬에스테르류 등을 들 수 있다.As said nonionic surfactant, polyoxyethylene alkyl ether, polyoxyethylene aryl ether, polyoxyethylene dialkyl ester, etc. are mentioned, for example.
이들의 구체적인 예로서는, 예를 들면 폴리옥시에틸렌알킬에테르류로서 폴리옥시에틸렌라우릴에테르, 폴리옥시에틸렌스테아릴에테르, 폴리옥시에틸렌올레일에테르 등을 들 수 있고, 폴리옥시에틸렌아릴에테르류로서 폴리옥시에틸렌옥틸페닐에테르, 폴리옥시에틸렌노닐페닐에테르를 들 수 있고, 폴리옥시에틸렌디알킬에스테르류로서 폴리옥시에틸렌디라우레이트, 폴리옥시에틸렌디스테아레이트 등을 들 수 있다.As these specific examples, polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, etc. are mentioned as polyoxyethylene alkyl ether, for example, Polyoxyethylene aryl ether is polyoxy; Ethylene octyl phenyl ether and polyoxyethylene nonyl phenyl ether are mentioned, Polyoxyethylene dilaurate, polyoxyethylene distearate, etc. are mentioned as polyoxyethylene dialkyl esters.
이러한 계면활성제의 시판품으로서는, 불소계 계면활성제로서 BMCHIMIE사 제조 상품명: BM-1000, BM-1100, 다이닛본 잉크 가가꾸 고교(주) 제조 상품명: 메가팩 F 142 D, 동 F 172, 동 F 173, 동 F 183, 스미또모 쓰리엠(주) 제조 상품명: 플로라드 FC-135, 동 FC-170 C, 동 FC-430, 동 FC-431, 아사히 가라스(주) 제조 상품명: 서프론 S-112, 동 S-113, 동 S-131, 동 S-141, 동 S-145, 동 S-382, 동 SC-101, 동 SC-102, 동 SC-103, 동 SC-104, 동 SC-105, 동 SC-106 등, (주)네오스사 제조 상품명: DFX-16, DFX-18, DFX-20 등;As a commercial item of such a surfactant, it is a fluorine-type surfactant, a brand name from BMCHIMIE company make: BM-1000, BM-1100, the Dai Nippon Ink Chemical Industries, Ltd. brand name: Megapack F 142 D, copper F 172, copper F 173, East F 183, Sumitomo 3M Co., Ltd. brand name: Florade FC-135, East FC-170 C, East FC-430, East FC-431, Asahi Glass Co., Ltd. brand name: Suflon S-112, S-113, S-131, S-141, S-145, S-382, SC-101, SC-102, SC-103, SC-104, SC-105, Such as SC-106, manufactured by Neos Co., Ltd. Brand Name: DFX-16, DFX-18, DFX-20, etc .;
실리콘계 계면활성제로서 도레이ㆍ다우코닝ㆍ실리콘(주) 제조 상품명: SH-28 PA, SH-190, SH-193, SZ-6032, SF-8428, DC-57, DC-190, 신에쓰 가가꾸 고교(주) 제조 상품명: KP 341, 신아끼따 가세이(주) 상품명: 에프톱 EF 301,동 EF 303,동 EF 352 등;Toray Dow Corning Silicone Co., Ltd. make as a silicone type surfactant, brand name: SH-28 PA, SH-190, SH-193, SZ-6032, SF-8428, DC-57, DC-190, Shin-Etsu Chemical Co., Ltd. (Trade name) KP 341, Shin-Aki Kasei Co., Ltd. brand name: F-Top EF 301, EF 303, EF 352, etc .;
비이온계 계면활성제로서 교에이샤 가가꾸(주) 제조 상품명: (메트)아크릴산계 공중합체 폴리플로우 No. 57, 동 No. 90, 동 No. 95 등을 들 수 있다.As nonionic surfactant, Kyoeisha Chemical Co., Ltd. make. Brand name: (meth) acrylic acid type copolymer polyflow No. 57, East No. 90, copper No. 95 and the like.
이들 계면활성제는 단독으로 또는 2종 이상을 조합하여 사용할 수가 있다.These surfactant can be used individually or in combination of 2 or more types.
계면 활성제의 사용 비율은 그 종류나 경화성 조성물을 구성하는 각 성분의 종류나 비율 등에 따라서도 다르지만 바람직하게는 공중합체 [A] 100 중량부에 대하여 5 중량부 이하, 보다 바람직하게는 0.0001 내지 2 중량부, 더욱 바람직하게는0.001 내지 0.5 중량부 이하의 범위에서 사용된다.Although the use ratio of surfactant changes also with the kind, ratio, etc. of each component which comprises a curable composition, Preferably it is 5 weight part or less with respect to 100 weight part of copolymers [A], More preferably, it is 0.0001-2 weight Parts, more preferably 0.001 to 0.5 parts by weight or less.
열경화성 조성물의 제조Preparation of Thermosetting Compositions
본 발명의 열경화성 조성물은 적당한 용매에 용해되어 용액 상태로 사용된다. 예를 들면 공중합체 [A] 및 [B] 성분 및 필요에 따라서 첨가되는 그 밖의 성분을 소정의 비율로 혼합함으로써 용액 상태의 열경화성 조성물을 제조할 수가 있다.The thermosetting composition of the present invention is dissolved in a suitable solvent and used in solution. For example, the thermosetting composition of a solution state can be manufactured by mixing copolymer [A] and [B] components, and the other component added as needed in a predetermined ratio.
본 발명의 열경화성 조성물은 각 성분을 바람직하게는 적당한 용매 중에 균일하게 용해 또는 분산시킴으로써 제조된다. 사용되는 용매로서는 조성물의 각 성분을 용해 또는 분산하여 각 성분과 반응하지 않는 것이 사용된다.The thermosetting composition of the present invention is prepared by uniformly dissolving or dispersing each component in a suitable solvent. As the solvent used, those which do not react with each component by dissolving or dispersing each component of the composition are used.
이러한 용매로서는 상술한 공중합체 [A]를 제조할 때에 사용되는 용매로서 예시한 것과 동일한 것을 사용할 수가 있다. 용매의 사용량으로서는 본 발명의 열경화성 조성물 중의 전고형분 (공중합체 [A] 및 [B] 성분 및 필요에 따라서 첨가되는 그 밖의 성분의 합계량)의 함유량이 바람직하게는 1 내지 50 중량부, 보다 바람직하게는 5 내지 40 중량부가 되는 범위이다.As such a solvent, the same thing as what was illustrated as a solvent used at the time of manufacturing copolymer [A] mentioned above can be used. As the usage-amount of a solvent, content of the total solid (copolymer [A] and [B] component and the other components added as needed) in the thermosetting composition of this invention becomes like this. Preferably it is 1-50 weight part, More preferably, Is a range of 5 to 40 parts by weight.
또한 상기한 용매와 함께 고비점 용매를 병용할 수가 있다. 병용할 수 있는 고비점 용매로서는, 예를 들면 N-메틸포름아미드, N,N-디메틸포름아미드, N-메틸포름아닐리드, N-메틸아세트아미드, N,N-디메틸아세트아미드, N-메틸피롤리돈, 디메틸술폭시드, 벤질에틸에테르, 디헥실에테르, 아세토닐아세톤, 이소포론, 카프론산, 카프릴산, 1-옥탄올, 1-노난올, 벤질알코올, 아세트산벤질, 벤조산에틸, 옥살산디에틸, 말레산디에틸, γ-부틸로락톤, 탄산에틸렌, 탄산프로필렌, 페닐셀로솔브아세테이트 등을 들 수 있다.Moreover, a high boiling point solvent can be used together with said solvent. As a high boiling point solvent which can be used together, it is N-methylformamide, N, N-dimethylformamide, N-methylformanilide, N-methylacetamide, N, N-dimethylacetamide, N-methylpi, for example. Rollidone, dimethyl sulfoxide, benzyl ethyl ether, dihexyl ether, acetonyl acetone, isophorone, capronic acid, caprylic acid, 1-octanol, 1-nonanol, benzyl alcohol, benzyl acetate, ethyl benzoate, dioxalic acid Ethyl, diethyl maleate, (gamma)-butyrolactone, ethylene carbonate, propylene carbonate, a phenyl cellosolve acetate, etc. are mentioned.
고비점 용매를 병용할 때의 사용량으로서는 전용매량에 대하여 바람직하게는 90 중량부 이하, 더욱 바람직하게는 80 중량부 이하이다.As a usage-amount when using a high boiling point solvent together, Preferably it is 90 weight part or less, More preferably, it is 80 weight part or less with respect to exclusive solvent quantity.
상기한 바와 같이 제조된 열경화성 조성물의 용액은 예를 들면 공경 0.2 내지 3.0 ㎛, 바람직하게는 공경 0.2 내지 0.5 ㎛ 정도의 밀리포아 필터 등을 사용하여 여과 분리한 후, 사용할 수도 있다.The solution of the thermosetting composition prepared as described above may be used after being separated by filtration using a Millipore filter having a pore size of about 0.2 to 3.0 μm, preferably about 0.2 to 0.5 μm, and the like.
고체 촬상 소자의 할레이션 방지막의 형성 방법Formation method of anti-halation film of solid-state image sensor
다음으로, 본 발명의 열경화성 조성물을 사용하여 본 발명의 고체 촬상 소자의 할레이션 방지막을 형성하는 방법에 대해서 설명한다.Next, the method of forming the anti-halation film of the solid-state image sensor of this invention using the thermosetting composition of this invention is demonstrated.
본 발명의 고체 촬상 소자의 할레이션 방지막의 형성 방법은 적어도 이하의 공정 [1] 및 [2]를 포함하는 것이다.The method of forming the anti-halation film of the solid-state imaging device of the present invention includes at least the following steps [1] and [2].
[1] 기판 상에 상기한 열경화성 조성물의 도막을 형성하는 공정, 및[1] forming a coating film of the above-mentioned thermosetting composition on a substrate, and
[2] 이 도막을 가열 처리하는 공정.[2] A step of heat treating the coating film.
이하, 순서대로 설명한다.Hereinafter, it demonstrates in order.
[1] 기판 상에 상기한 열경화성 조성물의 도막을 형성하는 공정.[1] A step of forming a coating film of the thermosetting composition described above on a substrate.
본 발명의 고체 촬상 소자의 할레이션 방지막의 형성 방법에 있어서는, 우선 기판 상에 본 발명의 열경화성 조성물의 도막을 형성하는 공정을 행한다. 기판 상으로의 도막의 형성은 기판 상에 본 발명의 열고화성 조성물을 도포함으로써 행하여진다.In the formation method of the anti-halation film of the solid-state image sensor of this invention, the process of first forming the coating film of the thermosetting composition of this invention on a board | substrate is performed. Formation of the coating film on a board | substrate is performed by apply | coating the thermosetting composition of this invention on a board | substrate.
본 발명에 있어서, 기판으로서, 예를 들면 유리, 석영, 실리콘, 수지 등의기판을 사용할 수가 있다. 수지로서는 예를 들면 폴리에틸렌테레프탈레이트, 폴리부틸렌테레프탈레이트, 폴리에테르술폰, 폴리카르보네이트, 폴리이미드 및 환상 올레핀의 개환 중합체 및 그의 수소 첨가물과 같은 수지를 들 수 있다.In the present invention, a substrate such as glass, quartz, silicon, or resin can be used as the substrate. As resin, resin, such as a ring-opening polymer of polyethylene terephthalate, polybutylene terephthalate, polyether sulfone, polycarbonate, polyimide, and cyclic olefin, and its hydrogenated substance, is mentioned, for example.
도포 방법으로서는, 예를 들면 분무법, 롤 코팅법, 회전 도포법, 바 도포법, 잉크젯법 등의 적절한 방법을 채용할 수가 있다.As a coating method, the appropriate method, such as the spray method, the roll coating method, the rotation coating method, the bar coating method, the inkjet method, can be employ | adopted, for example.
그 후, 용매를 제거함으로써 기판 상에 도막을 형성할 수가 있다. 본 발명에 있어서, 용매 제거 공정을 특별히 독립적으로 설치할 필요는 없고, 공정 중에 용매가 자연스럽게 산일하는 것과 같은 양태일 수 있고, 또한 용매 제거 공정을 다음「[2] 도막을 가열 처리하는 공정」과 일체로 행할 수도 있다. 또한, 별도의 용매 제거 공정을 채용하는 것을 제외하는 것은 아니다. 용매 제거 공정을 별도로 실시할 때에는 실온 내지 150 ℃ 정도의 온도로 적절한 시간을 유지함으로써 실시할 수가 있다.Thereafter, the coating film can be formed on the substrate by removing the solvent. In the present invention, there is no need to provide a solvent removal step in particular independently, and may be such that the solvent naturally disperses during the step, and the solvent removal step may be integrated with the following "step of heating the coating film". You can also do it. In addition, it does not exclude employ | adopting a separate solvent removal process. When performing a solvent removal process separately, it can carry out by maintaining a suitable time at the temperature of room temperature to about 150 degreeC.
여기서 도막의 두께는 바람직하게는 0.1 내지 5 ㎛, 더욱 바람직하게는 0.5 내지 3 ㎛이다. 또한 이 값은 용매 제거 후의 막 두께로서 이해되어야 한다.The thickness of the coating film is preferably 0.1 to 5 mu m, more preferably 0.5 to 3 mu m. This value should also be understood as the film thickness after solvent removal.
[2] 도막을 가열 처리하는 공정[2] heat treatment of coating film
상기한 바와 같이 하여 기판 상에 형성된 도막은 계속해서 가열 처리 공정을 실시함으로써 본 발명의 고체 촬상 소자의 할레이션 방지막으로 할 수 있다.The coating film formed on the board | substrate as mentioned above can be made into the anti-halation film of the solid-state image sensor of this invention by performing a heat processing process continuously.
가열 온도는 바람직하게는 150 내지 220 ℃이다. 가열 시간은 사용하는 가열 기기의 종류 등에 따라 적절하게 설정할 수가 있지만 가열 기기로서 예를 들면 핫 플레이트를 사용할 때는 3 내지 15 분간 정도, 크린 오픈을 사용할 경우에는 15내지 30 분간 정도로 할 수 있다.Heating temperature becomes like this. Preferably it is 150-220 degreeC. Although heating time can be set suitably according to the kind of heating apparatus to be used, etc., it can be set as about 3 to 15 minutes when using a hotplate as a heating apparatus, and about 15 to 30 minutes when using a clean open.
이 가열 처리 공정은 1 단계로 행할 수도 있고 또한 2 단계 이상의 공정의 조합으로 행할 수도 있다.This heat treatment step may be performed in one step or may be performed in a combination of two or more steps.
고체 촬상 소자의 할레이션 방지막Anti-halation film of solid-state image sensor
상기한 바와 같이 하여 형성된 본 발명의 고체 촬상 소자의 할레이션 방지막은 이 할레이션 방지막의 위에 칼라 필터나 마이크로렌즈를 형성할 때의 노광 공정에 있어서, 기초 기판으로부터의 난반사광을 효과적으로 억제할 수 있고, 또한 고도의 내열성을 갖는다. 그 때문에 본 발명의 고체 촬상 소자의 할레이션 방지막 상에 형성된 칼라 필터나 마이크로렌즈는 원하는 형상, 크기의 것으로 할 수 있다.The anti-halation film of the solid-state imaging device of the present invention formed as described above can effectively suppress diffuse reflection light from the base substrate in the exposure step when forming a color filter or microlens on the anti-halation film. It also has a high degree of heat resistance. Therefore, the color filter and microlens formed on the anti-halation film of the solid-state image sensor of this invention can be made into the desired shape and size.
또한, 고체 촬상 소자의 할레이션 방지막의 두께는 바람직하게는 0.1 내지 5㎛, 더욱 바람직하게는 0.5 내지 3 ㎛이다.In addition, the thickness of the anti-halation film of a solid-state image sensor becomes like this. Preferably it is 0.1-5 micrometers, More preferably, it is 0.5-3 micrometers.
이 값이 O.1 ㎛ 미만인 경우에는 기초 기판으로부터의 난반사광을 억제하는 효과가 불충분한 경우가 있고, 한편 5 ㎛를 초과하여 두겁게 할 필요는 없다.When this value is less than 0.1 µm, the effect of suppressing diffuse reflection light from the base substrate may be insufficient, while it is not necessary to increase the thickness to more than 5 µm.
고체 촬상 소자Solid-state imaging device
본 발명의 고체 촬상 소자는 상기 할레이션 방지막을 갖는다.The solid-state image sensor of this invention has the said antihalation film.
이 할레이션 방지막 상에 형성된 칼라 필터나 마이크로렌즈는 원하는 형상, 크기의 것이기 때문에 본 발명의 고체 촬상 소자는 신뢰성이 우수하다.Since the color filter and the microlens formed on the anti-halation film are of the desired shape and size, the solid-state imaging device of the present invention is excellent in reliability.
<실시예><Example>
이하에 합성예, 실시예를 나타내고, 본 발명을 더욱 구체적으로 설명하지만 본 발명은 이하의 실시예에 한정되는 것이 아니다.Although a synthesis example and an Example are shown to the following and this invention is demonstrated to it further more concretely, this invention is not limited to a following example.
<합성예 1>Synthesis Example 1
냉각관, 교반기를 구비한 플라스크에, 2,2'-아조비스(이소부티로니트릴) 6 중량부, 프로필렌글리콜모노메틸에테르아세테이트 200 중량부를 넣었다. 계속해서 스티렌 17.5 중량부, 메타크릴산글리시딜 77.5 중량부 및 단량체 (a2-1) (오쓰까 가가꾸(주) 제조, 상품명 「RUVA-93」) 5 중량부를 넣고 질소 치환한 후, 완만하게 교반을 시작하였다. 용액의 온도를 95 ℃로 상승시키고, 이 온도를 3 시간 유지하여 공중합체 [A-1]을 포함하는 중합체 용액을 얻었다. 얻어진 중합체 용액의 고형분 농도는 33.9 중량%이고, 공중합체 [A-1]의 폴리스티렌 환산 중량 평균 분자량은 8,500이었다.In a flask equipped with a cooling tube and a stirrer, 6 parts by weight of 2,2'-azobis (isobutyronitrile) and 200 parts by weight of propylene glycol monomethyl ether acetate were placed. Subsequently, 17.5 parts by weight of styrene, 77.5 parts by weight of glycidyl methacrylate, and 5 parts by weight of monomer (a2-1) (manufactured by Otsuka Kagaku Co., Ltd., trade name "RUVA-93") were added thereto, followed by nitrogen replacement. Agitation was started. The temperature of the solution was raised to 95 ° C., and the temperature was maintained for 3 hours to obtain a polymer solution containing a copolymer [A-1]. Solid content concentration of the obtained polymer solution was 33.9 weight%, and the polystyrene conversion weight average molecular weight of copolymer [A-1] was 8,500.
<합성예 2>Synthesis Example 2
냉각관, 교반기를 구비한 플라스크에, 2,2'-아조비스(이소부티로니트릴) 1 중량부, 프로필렌글리콜모노메틸에테르아세테이트 200 중량부를 넣었다. 계속해서 메타크릴산글리시딜 70 중량부 및 단량체 (a2-1) (오쓰까 가가꾸(주) 제조, 상품명 「RUVA-93」) 30 중량부를 넣고 질소 치환한 후, 완만하게 교반을 시작하였다. 용액의 온도를 95 ℃로 상승시키고, 이 온도를 3 시간 유지하여 공중합체 [A-2]를 포함하는 중합체 용액을 얻었다. 얻어진 중합체 용액의 고형분 농도는 33.0 중량%이고, 공중합체 [A-2]의 폴리스티렌 환산 중량 평균 분자량은 20,000이었다.1 part by weight of 2,2'-azobis (isobutyronitrile) and 200 parts by weight of propylene glycol monomethyl ether acetate were placed in a flask equipped with a cooling tube and a stirrer. Subsequently, 70 parts by weight of glycidyl methacrylate and 30 parts by weight of the monomer (a2-1) (manufactured by Otsuka Chemical Co., Ltd., trade name "RUVA-93") were put thereinto, followed by nitrogen substitution, followed by gentle stirring. . The temperature of the solution was raised to 95 ° C, and this temperature was maintained for 3 hours to obtain a polymer solution containing a copolymer [A-2]. Solid content concentration of the obtained polymer solution was 33.0 weight%, and the polystyrene conversion weight average molecular weight of copolymer [A-2] was 20,000.
<합성예 3>Synthesis Example 3
냉각관, 교반기를 구비한 플라스크에, 2,2'-아조비스(이소부티로니트릴) 2 중량부, 프로필렌글리콜모노메틸에테르아세테이트 200 중량부를 넣었다. 계속해서스티렌 10 중량부, 메타크릴산글리시딜 80 중량부 및 단량체 (a2-2) 10 중량부를 넣고 질소 치환한 후, 완만하게 교반을 시작하였다. 용액의 온도를 95 ℃로 상승시키고, 이 온도를 3 시간 유지하여 공중합체 [A-3]을 포함하는 중합체 용액을 얻었다. 얻어진 중합체 용액의 고형분 농도는 33.4 중량%이고, 공중합체 [A-3]의 폴리스티렌 환산 중량 평균 분자량은 10,000이었다.2 parts by weight of 2,2'-azobis (isobutyronitrile) and 200 parts by weight of propylene glycol monomethyl ether acetate were placed in a flask equipped with a cooling tube and a stirrer. Subsequently, 10 parts by weight of styrene, 80 parts by weight of glycidyl methacrylate, and 10 parts by weight of monomer (a2-2) were added thereto, followed by nitrogen substitution, followed by gentle stirring. The temperature of the solution was raised to 95 ° C., and this temperature was maintained for 3 hours to obtain a polymer solution containing a copolymer [A-3]. Solid content concentration of the obtained polymer solution was 33.4 weight%, and the polystyrene conversion weight average molecular weight of copolymer [A-3] was 10,000.
<비교 합성예 1>Comparative Synthesis Example 1
냉각관, 교반기를 구비한 플라스크에, 2,2'-아조비스(이소부티로니트릴) 2 중량부, 프로필렌글리콜모노메틸에테르아세테이트 200 중량부를 넣었다. 계속해서 스티렌 20 중량부, 메타크릴산글리시딜 80 중량부 중량부를 넣고 질소 치환한 후, 완만하게 교반을 시작하였다. 용액의 온도를 95 ℃로 상승시키고, 이 온도를 3 시간 유지하여 공중합체 [R-1]을 포함하는 중합체 용액을 얻었다. 얻어진 중합체 용액의 고형분 농도는 32.8 중량%이고, 폴리스티렌 환산 중량 평균 분자량은 10,000이었다.2 parts by weight of 2,2'-azobis (isobutyronitrile) and 200 parts by weight of propylene glycol monomethyl ether acetate were placed in a flask equipped with a cooling tube and a stirrer. Subsequently, 20 parts by weight of styrene and 80 parts by weight of glycidyl methacrylate were added thereto, followed by nitrogen replacement, followed by gentle stirring. The temperature of the solution was raised to 95 ° C., and this temperature was maintained for 3 hours to obtain a polymer solution containing a copolymer [R-1]. Solid content concentration of the obtained polymer solution was 32.8 weight%, and the polystyrene conversion weight average molecular weight was 10,000.
<실시예 1><Example 1>
상기 합성예 1에서 합성한 공중합체 [A-1]을 포함하는 중합체 용액의 공중합체 [A-1] 100 중량부 (고형분)에 상당하는 양을, 프로필렌글리콜모노메틸에테르아세테이트 100 중량부로 희석한 후, 접착 조제로서 γ-글리시독시프로필에톡시실란 5 중량부 및 계면활성제로서 SH28PA (실리콘계 계면활성제, 도레이ㆍ다우 코닝ㆍ실리콘(주) 제조) 0.075 중량부, [B] 성분으로서 무수 트리멜리트산의 디에틸렌글리콜메틸에틸에테르의 25 중량% 용액을 고형분 환산으로 5 중량부를 첨가하여 충분히 교반함으로써 열경화성 조성물 [S-1]을 얻었다.An amount corresponding to 100 parts by weight of the copolymer [A-1] (solid content) of the polymer solution containing the copolymer [A-1] synthesized in Synthesis Example 1 was diluted with 100 parts by weight of propylene glycol monomethyl ether acetate. 5 parts by weight of γ-glycidoxypropylethoxysilane as an adhesion aid and 0.075 parts by weight of SH28PA (silicone-based surfactant, manufactured by Toray Dow Corning Silicon Co., Ltd.) as an surfactant, and anhydrous trimelli as [B] component. A thermosetting composition [S-1] was obtained by adding 5 parts by weight of a 25% by weight solution of diethylene glycol methylethyl ether in transic acid in terms of solid content and stirring sufficiently.
할레이션 방지막의 형성Formation of the anti-halation film
유리 기판 상에, 상기에서 제조한 경화성 조성물 [S-1]을 스핀 코터를 사용하여 도포하고, 핫 플레이트에 의해 180 ℃에서 3 분간 가열 처리하여 막 두께 1.62 ㎛의 할레이션 방지막을 형성하였다.The curable composition [S-1] prepared above was apply | coated using the spin coater on the glass substrate, and it heat-processed at 180 degreeC for 3 minutes with the hotplate, and formed the antihalation film of 1.62 micrometer of film thicknesses.
할레이션 방지막의 평가Evaluation of the anti-halation film
(1) 광선 투과율(1) light transmittance
상기한 바와 같이 형성한 할레이션 방지막을 갖는 기판에 대해서 분광 광도계 150-20형 더블 빔 (히타치 세이사꾸쇼(주) 제조)을 사용하여 365 nm 및 400 nm의 투과율을 측정하였다. 계속해서, 핫 플레이트로 185 ℃, 20 분간의 추가 가열을 행한 후, 동일하게 365 nm 및 400 nm의 투과율을 측정하였다. 이들의 값을 하기 표 1에 나타냈다. 365 nm의 투과율이 70 % 이하인 경우, 할레이션 방지 성능, 즉 칼라 필터나 마이크로렌즈를 형성할 때의 노광 공정에서의 기초 기판으로부터의 난반사광을 억제하는 효과가 우수하다고 할 수 있다. 또한, 400 nm의 투과율이 95 %이상일 때, 가시광선의 투과율이 양호하다고 말할 수 있다.The transmittances of 365 nm and 400 nm were measured using a spectrophotometer 150-20 type double beam (manufactured by Hitachi Seisakusho Co., Ltd.) on the substrate having the antihalation film formed as described above. Subsequently, after further heating at 185 degreeC for 20 minutes with a hotplate, the transmittance | permeability of 365 nm and 400 nm was measured similarly. These values are shown in Table 1 below. When the transmittance of 365 nm is 70% or less, it can be said that the antihalation performance, that is, the effect of suppressing diffuse reflection light from the base substrate in the exposure step when forming the color filter or the microlens is excellent. Further, when the transmittance of 400 nm is 95% or more, it can be said that the transmittance of visible light is good.
실시예 1에서 형성한 할레이션 방지막에 대해서 보면 추가 가열 전 및 추가 가열 후 모두에 있어서, 할레이션 방지 성능 및 가시광선 투과율이 우수하다는 것을 알 수 있다.As to the anti-halation film formed in Example 1, it can be seen that the anti-halation performance and the visible light transmittance are excellent both before and after the additional heating.
(2) 내습열성(2) heat and moisture resistance
상기한 바와 같이 형성한 할레이션 방지막을 갖는 기판에 대해서 항온 항습조에서, 85 ℃-85 % RH에서 7 일간 처리한 전후의 막 두께의 변화를 측정하였다. 하기 수학식 1에 따라서 산출한 내습열성을 표 1에 나타냈다.For the substrate having the antihalation film formed as described above, the change in the film thickness before and after treatment for 7 days at 85 ° C.-85% RH in a constant temperature and humidity bath was measured. Table 1 shows the moist heat resistance calculated according to the following equation (1).
(3) 마이크로렌즈 재료의 패턴화(3) patterning of the microlens material
상기한 바와 같이 형성한 할레이션 방지막을 갖는 기판 상에, 스피너를 사용하여 마이크로렌즈 재료 (JSR(주) 제조, 상품명 「MFR-380」)을 도포한 후, 100 ℃에서 90 초간 핫 플레이트 상에서 미리 소성하여 막 두께 2.5 ㎛의 도막을 형성하였다. 얻어진 도막에 4.0 ㎛ 도트ㆍ2.0 ㎛ 스페이스 패턴을 갖는 패턴 마스크를 통해 니콘(주) 제조 NSR1755i7A 축소 투영 노광기 (NA=0.50, λ=365 nm)로 2,200 J/m2의 노광량으로 노광을 행하고, 1 중량%의 테트라메틸암모늄히드록시드 수용액으로 23 ℃, 1 분간 요동 침지법으로 현상하였다. 이어서 23 ℃에서 초순수로 30 초간 유수 세정하고, 건조하여 기판 상의 할레이션 방지막 상에 패턴을 형성하였다.After apply | coating a microlens material (JSR Corporation make, brand name "MFR-380") using a spinner, on the board | substrate which has the anti-halation film formed as mentioned above on 100 degreeC in advance for 90 second on a hotplate It baked and formed the coating film of 2.5 micrometers in thickness. The obtained coating film was exposed to light at a dose of 2,200 J / m 2 with a Nikon Corporation NSR1755i7A reduced projection exposure machine (NA = 0.50, λ = 365 nm) through a pattern mask having a 4.0 μm dot 2.0 μm space pattern. It developed by the shaking immersion method at 23 degreeC with the aqueous solution of the tetramethylammonium hydroxide of the weight% by 1 minute. Subsequently, flowing water was washed with ultrapure water at 23 ° C. for 30 seconds and dried to form a pattern on the anti-halation film on the substrate.
여기서 형성된 마이크로렌즈 패턴을 주사형 전자 현미경 ((주)히타치 게이소꾸기 서비스 제조, 형식 「S-4200」)을 사용하여 관찰하였다. 패턴의 형상을 표 1에 나타냈다. 이 때, 할레이션 방지막의 할레이션 방지 성능 (기초 기판으로부터의 난반사광을 억제하는 성능)이 충분하면 도 1(a)와 같이 패턴 측면이 평면 상에형성된다. 그러나, 할레이션 방지 성능이 불충분하면 노광시에 할레이션에 의한 정재파가 영향을 미쳐 패턴 측면은 도 1(b)와 같이 파상으로 형성된다.The microlens pattern formed here was observed using the scanning electron microscope (the Hitachi Keisoku Service Co., Ltd. make, model "S-4200"). The shape of the pattern is shown in Table 1. At this time, if the anti-halation performance of the anti-halation film (the ability to suppress the diffuse reflection light from the base substrate) is sufficient, the pattern side surface is formed on the plane as shown in Fig. 1 (a). However, if the antihalation performance is insufficient, the standing wave due to the halation at the time of exposure is affected, so that the pattern side surface is wavy as shown in Fig. 1 (b).
또한, 상기한 바와 같이 형성한 할레이션 방지막을 갖는 기판을, 또한 핫 플레이트에서 185 ℃, 20 분간의 추가 가열을 행한 후, 해당 추가 가열 처리한 할레이션 방지막 상에, 상기와 같이 하여 마이크로렌즈 패턴을 형성하였다. 동일하게 전자 현미경에 의한 패턴 형상의 관찰 결과를 표 1에 나타냈다.Further, after further heating the substrate having the anti-halation film formed as described above with a hot plate at 185 ° C. for 20 minutes, the microlens pattern was formed on the anti-halation film subjected to the additional heat treatment as described above. Formed. Similarly, the observation result of the pattern shape by an electron microscope was shown in Table 1.
<실시예 2 내지 4><Examples 2 to 4>
실시예 1에 있어서, 공중합체 [A]로서 공중합체 [A-1]을 함유하는 용액 대신에 표 1에 기재한 공중합체를 함유하는 용액을 고형분 환산으로 100 중량부 첨가하고, 또한 [B] 성분인 무수 트리멜리트산, 계면활성제인 SH28PA (실리콘계 계면활성제, 도레이ㆍ다우코닝ㆍ실리콘(주) 제조) 및 접착 조제인 γ-글리시독시프로필에톡시실란의 첨가량을 각각 표 1에 기재한 바와 같이 한 것 이외는 실시예 1과 동일하게 실시하였다.In Example 1, 100 weight part of solutions containing the copolymer shown in Table 1 were added instead of the solution containing copolymer [A-1] as copolymer [A], and [B] The addition amounts of trimellitic anhydride as a component, SH28PA (silicone-based surfactant, manufactured by Toray Dow Corning Silicon Co., Ltd.) and γ-glycidoxypropylethoxysilane as an adhesion aid are shown in Table 1, respectively. It carried out similarly to Example 1 except having performed it.
또한 [B] 성분인 무수 트리멜리트산은 25 중량% 디에틸렌글리콜메틸에틸에테르 용액으로서 첨가하고, 표 1에 있어서의 [B] 성분 첨가량은 용액을 고형분으로 환산한 양이다. 또한 각 실시예에서 형성된 할레이션 방지막의 막 두께는 표 1에 나타냈다.In addition, trimellitic anhydride which is [B] component is added as a 25 weight% diethylene glycol methyl ethyl ether solution, and the addition amount of [B] component in Table 1 is the amount which converted the solution into solid content. In addition, the film thickness of the anti-halation film formed in each Example is shown in Table 1.
평가 결과는 표 1에 나타냈다.The evaluation results are shown in Table 1.
<실시예 5>Example 5
실시예 1에 있어서, [B] 성분인 무수 트리멜리트산의 디에틸렌글리콜메틸에틸에테르의 25 중량% 용액의 첨가량을 고형분 환산으로 3 중량부로 하고, 계면활성제인 SH28PA (실리콘계 계면활성제, 도레이ㆍ다우코닝ㆍ실리콘(주) 제조) 및 접착 조제인 γ-글리시독시프로필에톡시실란의 첨가량을 각각 표 1에 기재한 대로 하고, 또한 효과 촉진제로서 2-에틸-4-메틸이미다졸을 0.002 중량부 첨가한 것 이외는 실시예 1과 동일하게 실시하였다. 또한 여기에서 형성한 할레이션 방지막의 막 두께는 1.62 ㎛이었다.In Example 1, the addition amount of the 25 weight% solution of the diethylene glycol methyl ethyl ether of trimellitic anhydride which is [B] component is 3 weight part in conversion of solid content, and SH28PA (silicone surfactant, Toray Dow which is surfactant) Corning Silicon Co., Ltd.) and the addition amount of (gamma)-glycidoxy propyl ethoxysilane which are adhesion | attachment adjuvant were respectively shown in Table 1, and 0.002 weight of 2-ethyl-4- methylimidazole as an effect promoter It carried out similarly to Example 1 except having added part. In addition, the film thickness of the anti-halation film formed here was 1.62 micrometer.
평가 결과는 표 1에 나타냈다.The evaluation results are shown in Table 1.
<실시예 6><Example 6>
실시예 2에 있어서, [B] 성분 첨가량을 5 중량부, 접착 조제량을 5 중량부 및 계면활성제의 첨가량을 0.05 중량부로 한 것 이외는 실시예 2와 동일하게 실시하였다. 형성된 할레이션 방지막의 막 두께는 0.5 ㎛이었다. 평가 결과를 표 1에 나타냈다.In Example 2, it carried out similarly to Example 2 except having set the addition amount of [B] component 5 weight part, the adhesion | attachment preparation amount 5 weight part, and the addition amount of surfactant to 0.05 weight part. The film thickness of the formed anti-halation film was 0.5 micrometer. The evaluation results are shown in Table 1.
<비교예 1>Comparative Example 1
실시예 1에 있어서, 공중합체 [A-1]을 함유하는 용액 대신에 상기 비교 합성예 1에서 합성한 공중합체 [R-1]을 함유하는 용액을 고형분 환산으로 100 중량부 첨가하고, 또한 방사선 흡수제로서의 티누빈 234 (치바가이기(주) 제조)를 10 중량부 첨가한 것 이외는 실시예 1과 동일하게 실시하였다. 또한 여기에서 형성한 할레이션 방지막의 막 두께는 1.63 ㎛이었다.In Example 1, 100 weight part of solutions containing the copolymer [R-1] synthesize | combined by the said comparative synthesis example 1 were added instead of the solution containing copolymer [A-1], and also radiation It carried out similarly to Example 1 except having added 10 weight part of tinuvin 234 (made by Chiba-Geigi Co., Ltd.) as an absorbent. In addition, the film thickness of the anti-halation film formed here was 1.63 micrometers.
평가 결과를 표 1에 나타냈다.The evaluation results are shown in Table 1.
비교예 1의 할레이션 방지막은, 추가 가열 전의 할레이션 방지 성능은 양호하지만 추가 가열 후의 할레이션 방지 성능은 현저히 저하되어 있고, 내열성이 떨어진다는 것을 알 수 있다.Although the anti-halation performance before the additional heating of the anti-halation film of the comparative example 1 is favorable, it is understood that the anti-halation performance after the additional heating falls remarkably, and heat resistance is inferior.
본 발명에 따르면 고체 촬상 소자에서 칼라 필터나 마이크로렌즈를 형성할 때의 노광 공정에 있어서, 기초 기판으로부터의 난반사광을 효과적으로 억제할 수 있고 또한 가시광선의 투과율이 높고, 또한 고도의 내열성을 갖는 할레이션 방지막을 형성하는데 적합한 열경화성 조성물, 그것을 사용하여 할레이션 방지막을 형성하는 방법 및 그 방법에 의해 형성된 할레이션 방지막 및 그 할레이션 방지막을 갖는 고체 촬상 소자가 제공된다.According to the present invention, in the exposure step when forming a color filter or a microlens in a solid-state image sensor, halides can effectively suppress diffuse reflection light from the base substrate, have high transmittance of visible light, and have high heat resistance. Provided are a thermosetting composition suitable for forming a protective film, a method of forming an anti-halation film using the same, and a solid-state imaging device having the anti-halation film formed by the method and the anti-halation film thereof.
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