KR20040046075A - manufacturing equipment of semiconductor device - Google Patents

Abstract

PURPOSE: Semiconductor device manufacturing equipment is provided to prevent the contamination due to many kinds of gases and by-products and prolong the lifetime of each part by using a guiding part. CONSTITUTION: Semiconductor device manufacturing equipment includes a guiding part(64) having a lower temperature than other parts. Preferably, at least one guiding part is used for the equipment and the guiding part is capable of being replaced with another. Preferably, a coolant supply line(66) is connected with the guiding part for conserving an aiming temperature state. Preferably, the guiding part is installed at the lower portion of a loaded wafer in a chamber. Preferably, the guiding part is installed near to a gas exhaust portion.

Description

Manufacturing Equipment of Semiconductor Device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing facility for preventing damage and contamination of wafers and respective components within the chamber from the influence of various polymers produced in the chamber.

In general, a semiconductor device is a photolithography, etching, ashing, diffusion, chemical vapor deposition, ion implantation, and metal deposition process on the wafer selectively and repeatedly to perform at least one conductive layer, semiconductor layer And a non-conductor layer, etc., to be laminated and combined.

In the semiconductor device manufacturing process, etching, ashing, diffusion, chemical vapor deposition, metal deposition, and the like, process gases are supplied under vacuum or high temperature atmosphere, and these process gases are converted into plasma or combined with other process gases. There is one that allows for the desired reaction to occur on the wafer.

In this process, reaction by-products such as polymers are generated in the process chamber in which the process gas is converted into a plasma state, and these reaction by-products are deposited indiscriminately throughout the chamber, thereby inhibiting the process for subsequent process execution. In addition to being a factor, falling from the deposited surface to the wafer causes defects or contamination of the area.

In addition, in performing a process such as diffusion or chemical vapor deposition, the chamber in which the process is performed requires a clean atmosphere in which various gases remaining therein are discharged before the next process proceeds. According to this demand, the process of discharging various gases remaining inside the chamber is performed, and at this time, the side walls of the discharge unit and the discharge line are at a relatively low temperature level compared to the inside of the chamber, and deposition of various gases discharged is performed. do. The powder gas discharged in this way acts as a particle that contaminates the wafer and the chamber when it flows back into the chamber in an emergency during the process, and when the degree of deposition increases, it affects the pressure build-up inside the chamber. At the same time, problems such as delaying the time for formation of the process conditions are caused.

Here, as described above, the conventional technical configuration for solving the problem caused by the deposition of various reaction by-products or the exhaust gas containing the same will be described with reference to the accompanying drawings.

First, referring to the prior art configuration using the plasma of the semiconductor device manufacturing facilities, as shown in Figure 1, the upper body of the lower body 10 of the open container shape and the open upper portion of the lower body 10 is covered with a shape The upper body 12 is coupled to form a chamber (60, 62) partitioning the inside. In addition, the chambers 60 and 62 are provided with a chuck assembly 14 for supporting and supporting a wafer W that is introduced into a shape protruding from the bottom center portion of the lower body 10. The head part 16 is provided in the center part of the bottom face of the opposing upper body 12. As shown in FIG. Here, the above-described head portion 16 may function as a showerhead for supplying a process gas required to be converted into a plasma state or a process gas converted into a plasma state in a uniform distribution relationship, and the chuck assembly 14 It may serve as a lower electrode for high frequency power, and functions as an upper electrode for converting the process gas distributed therebetween into a plasma state. In addition, the chambers 60 and 62 are connected to a vacuum pump (omitted for the sake of simplicity of illustration) and the discharge line 18, and polymers, etc., generated in the process progress in each part of the chambers 60 and 62. In order to prevent the deposition of the reaction by-products, a liner 20 for replacing the deposition site or a heater 22 for preventing the deposition is provided.

Looking at the progress of the process from this configuration, first, the wafer (W) from the neighboring transfer chamber (60, 62) is made to be normally fixed on the chuck assembly 14, the interior of the chamber (60, 62) is sealed The process and the process of forming a vacuum atmosphere are performed. Thereafter, the process gas distributed between the head 16 and the chuck assembly 14 is formed in a plasma state and reacts on the wafer W.

However, as described above, reaction by-products such as polymers generated during the process are indiscriminately deposited on the inside of the chamber, and the components of the above-described liner or heater are not installed because their installation sites are limited. The site had a problem that the deposition of reaction by-products was relatively intensified, resulting in damage and contamination to each component site in the wafer and chamber through it.

In addition, the above-described heater is to prevent the deposition of the polymer to achieve a relatively high temperature compared to the other components inside the chamber, which is difficult to install the heater at the peripheral portion of the wafer that is required to prevent deposition of the polymer As well as being in a relatively low temperature atmosphere there is a problem that the deepening of the deposition proceeds.

In addition, the above-described configuration of the liner is intended to replace the deposition of reaction by-products on the inner wall of the chamber, which results in shortening the cleaning cycle by being installed in a large area on the inner wall of the chamber.

Meanwhile, referring to a conventional technical configuration that performs a process in a heating atmosphere, such as diffusion or chemical vapor deposition, among the configurations of the semiconductor device manufacturing facility, as shown in FIG. 2, a flange body is formed on a gate formed in the housing 30. (32) is mounted in a conventional manner, the upper portion of the flange body 32 supports the longitudinal outer tube 34, the outer tube 34 is a heater for heating the inside from the outside It is surrounded by (36). In addition, the inner wall of the flange body 32 is provided with a hooking jaw 38 of a shape extending protruding annularly along its circumference, the hooking jaw 38 supports the tubular inner tube 40 to the outside The tube 34 is spaced at regular intervals relative to the inner wall.

In addition, the boat 42 on which the plurality of wafers W are mounted is lifted and lowered by an elevator (omitted for simplification of the drawing) below the flange body 32, and the plate provided in the boat 42 ( When the 44 is in close contact with the lower portion of the flange body 32, the inside of the boat 42 in which the plurality of wafers W are mounted forms an airtight atmosphere. In addition to this configuration, a supply nozzle 46 through which process gas is supplied is connected to the lower portion of the locking jaw 38 of the flange body 32 between the inner tube 40 and the boat 42, and the locking jaw 38 is provided. On the flange body 32 of the upper side, there is provided a discharge part 50 through which various gases are discharged to the discharge line 48 communicating between the outer tube 34 and the inner tube 40.

Looking at the progress of the process from such a configuration, when the plate 44, which is lifted by the elevator means is in close contact with the lower portion of the flange body 32, the inside of the plurality of wafers (W) and the boat 42 mounted thereon is located A sealed atmosphere is achieved. Subsequently, the process gas supplied through the supply nozzle 46 in the heating atmosphere of the heater 36 described above is subjected to a series of process reactions between the wafers W. Then, when the process is completed, the discharged unreacted residual gas and reaction by-products are discharged by the vacuum pressure provided through the discharge unit 50 described above.

However, even in the above-described configuration, as the unreacted gas discharged passes through the discharge portion having a relatively low temperature in the heating atmosphere in the process chamber, it is deposited in powder form on the discharge portion and the inner wall of the discharge line by a sudden temperature change. In this case, when the degree of deposition is deepened due to the repetition of this process, the vacuum pressure transmission through the discharge unit is not normally performed, thereby causing a delay in the working time. In addition, there is a problem of acting as particles that contaminate and damage the wafer W and each component in the process of leaving the wafers from the process chamber and the subsequent process for other wafers.

In addition, the cleaning cycle of the equipment to prevent such a problem is shortened, there is a problem that the operation rate and productivity of the equipment is reduced due to the hassle of disassembly and assembly of each component and the delay of working time.

An object of the present invention is to solve the problems according to the prior art described above, to prevent contamination and damage of the wafer and its components from various gases and reaction by-products that require discharge during the process or after the process is finished. In addition, to extend the life of the cleaning cycle and the configuration of each part, thereby providing a semiconductor device manufacturing equipment to improve the operation rate, productivity and manufacturing yield of the manufacturing equipment, as well as reducing the labor and labor of the worker.

1 is a schematic cross-sectional view of a general semiconductor device manufacturing facility using a process gas in a plasma state.

2 is a cross-sectional view schematically showing another configuration of a semiconductor device manufacturing apparatus in which a diffusion or chemical vapor deposition process is performed.

3 is a schematic cross-sectional view of a semiconductor device manufacturing apparatus according to an embodiment of the present invention.

Figure 4 is a schematic cross-sectional view showing a semiconductor device manufacturing apparatus according to another embodiment of the present invention.

Explanation of symbols on the main parts of the drawings

10, 60: lower body 12, 62: upper body

14: chuck assembly 16: head portion

18, 48: discharge line 20: liner

22, 36: heater 30: housing

32: flange body 34: outer tube

38: engaging jaw 40: inner tube

42: boat 44: plate

46: supply nozzle 50: discharge part

64: induction part 66: refrigerant supply line

68: purge gas supply line 70: purge gas supply nozzle

A feature of the present invention for achieving the above object is characterized in that it comprises an induction unit for forming and maintaining a lower temperature state than the other components around each part, including the inside of the chamber in which the process is made, the discharge of various gases do.

In addition, the induction part may be detachably configured with at least one or more, and the temperature state of the induction part may be configured to be connected to the refrigerant supply line from the outside of the chamber so that the refrigerant may be circulated therein.

In addition, the installation position of the induction part is preferably to be below the height of the wafer is placed in the chamber, or may be made in close proximity to the site of the discharge of various gases in the chamber.

In addition, the chamber may further include a purge gas supply nozzle connected to an external purge gas supply line to supply a purge gas to guide the flow of the fluid from the induction part toward the discharge part.

On the other hand, in the semiconductor device manufacturing method according to the present invention for achieving the above object, the induction unit for forming and maintaining a lower temperature state than the other components around each part including the interior of the chamber where the process is made, the discharge of various gases And a purge gas supply nozzle connected to an external purge gas supply line inside the chamber to supply a purge gas to induce a flow of fluid from the induction part to the discharge part, and after the process is completed, the chamber Providing a vacuum pressure from the bottom of the; And supplying a purge gas to guide the flow of the fluid from the periphery of the induction part to the site where the vacuum pressure is provided in the process of providing the vacuum pressure.

Hereinafter, a semiconductor device manufacturing apparatus according to an embodiment of the present invention will be described with reference to the accompanying drawings.

3 is a cross-sectional view schematically showing a semiconductor device manufacturing apparatus having an induction part according to an embodiment of the present invention, and FIG. 4 is a cross-sectional view schematically showing another application example of the induction part configuration shown in FIG. The same reference numerals are given to the drawings, and detailed description thereof will be omitted.

Referring to the configuration shown in Figure 3 with respect to the semiconductor device manufacturing equipment according to the present invention first, there is a lower body 60 of the container shape of the upper opening, the upper body 62 from the upper side of the lower body 60 Is combined to form a chamber (60, 62) partitioning the interior. In addition, the chambers 60 and 62 have a chuck assembly 14 for supporting and supporting the bottom surface of the wafer W to be introduced, and the center portion of the bottom surface of the upper body 62 facing the chuck assembly 14. Has a head portion 16. In addition, the chamber (60, 62) is connected to the vacuum pump (omitted for the sake of simplicity of the drawing) and the discharge line 18 on one side, and each part inside the chamber (60, 62) is generated during the process progress In order to prevent deposition of reaction byproducts such as a polymer, a structure such as a liner 20 for replacing the deposition site or a heater 22 for preventing the deposition is provided. In addition, the above-described chambers 60 and 62 communicate with the peripheral portion of each component or the interior of the chambers 60 and 62 which are affected by reaction by-products such as polymers according to the process. It is provided with an induction part 64 which forms and maintains the temperature state lower than the surface of another structure part around each site | part which discharge | release of various gases, such as reaction gas or reaction by-product containing a polymer. The induction part 64 is preferably provided in a form in which at least one or more detachable with respect to each part of the periphery or discharge of the respective components in the above-described chamber (60, 62), wherein the temperature state of the induction part (64) The formation may be performed by connecting the refrigerant supply line 66 including the coolant or the cooling gas from the outside of the chambers 60 and 62 to circulate the refrigerant through the inside of the induction unit 64. In addition, the installation position of the above-described induction part 64 is preferably positioned at a lower position than the place where the wafer W in the chambers 60 and 62 is placed. It can be made to be installed in close proximity to the range does not interfere with the various gas flow through.

Looking at the progress of the process from this configuration, the wafer W, which is first introduced into the chambers 60 and 62 from a neighboring transfer chamber (not shown for simplicity of illustration), is typically seated on the chuck assembly 14. The interior of the chambers 60 and 62 is closed and a vacuum pressure atmosphere is formed. Thereafter, the process gas distributed between the head 16 and the chuck assembly 14 is formed in a plasma state and reacts on the wafer W. At this time, various by-products such as reaction by-products such as polymer generated during the process or unreacted gas remaining until the end of the process are distributed with respect to each part inside the chambers 60 and 62 to make contact with the surface of adjacent components. Is done. Here, as described above, each component inside the chambers 60 and 62 maintains a high temperature atmosphere, so that the deposition reaction of various gases is small, but the surface of the induction unit 64 has a low temperature atmosphere in the process of contacting various gases. The deposition is easily performed, thereby reducing the deposition rate of various gases with respect to each component part in the chambers 60 and 62. In addition, various gases flowing in contact with the surface of the induction part 64 take their own temperature, form a powder shape by mutual coupling with other gases in the surrounding area, and fall under the chambers 60 and 62, The vapor deposition becomes difficult. In addition, various types of powder gas accumulated in the lower part of the chambers 60 and 62 may be discharged to the discharge part or the inner wall of the discharge line in a vacuum pressure transfer process for discharging unreacted gases and reaction by-products remaining in the chambers 60 and 62. Even if it is flowed out in a difficult state of vapor deposition and remains inside the chambers 60 and 62, it is difficult to escape by its own load, and each constituent part involved in the wafer W and the wafer W has various powder states. The result is that damage and contamination from the gas are prevented. In addition to the above-described configuration, the chamber 60, corresponding to the case where the above-described induction part 64 is located below the wafer W and is located close to the discharge line 18 through which various gases are discharged, is formed. 62) Purge gas supply inside the purge gas supply line connected to the external purge gas supply line 68 to supply the purge gas to guide the flow to the discharge line 48 to the various gases accumulated at the periphery including the above-described induction section 64 The nozzle 70 may be configured to be further provided. According to this, after the process is completed, the deposited film quality on the surface of the induction part 64 is weak, that is, the film film, which can easily fall, is removed through the supply of purge gas to each component part of the chambers 60 and 62. Prevents the flow of, and can be easily discharged.

On the other hand, the configuration shown in Figure 4, the discharge portion 50 and the discharge line forming a relatively low temperature atmosphere in the process of discharging the residual gas in the outer tube 34 after the process such as diffusion or chemical vapor deposition proceeds Various gases are deposited on the inner wall of 48 to convert these gases into a powder state in advance so that the flow can be carried out so that the various gases for the discharge section 50 or the discharge line 48 and the respective components of the peripheral portion thereof can be formed. For protection from deposition reactions.

Therefore, according to the present invention, the wafer and each component portion is provided with an induction portion to increase the deposition rate of the various gases and reaction by-products that are required to be discharged after the process or the end of the process, instead of the wafer and each component portion. Contamination and damage are prevented, and thus the cleaning cycle and lifespan of each component are prolonged, thereby reducing the labor and hassle of the worker, and improving the operation rate, productivity, and manufacturing yield of the manufacturing facility.

Although the present invention has been described in detail only with respect to specific embodiments, it will be apparent to those skilled in the art that modifications and variations can be made within the scope of the technical idea of the present invention, and such modifications or changes belong to the claims of the present invention. something to do.

Claims (7)

A semiconductor device manufacturing equipment comprising an induction part for forming and maintaining a lower temperature state than other components in the periphery of each part where various gases are discharged, including the inside of a chamber in which a process is performed. The method of claim 1, The induction part is the semiconductor device manufacturing equipment, characterized in that made by detachable configuration. The method of claim 1, Forming the temperature state of the induction part is connected to the refrigerant supply line from the outside of the chamber is configured to configure the refrigerant to be circulated inside the semiconductor device manufacturing facility. The method of claim 1, And the induction part is installed at a lower side of a height at which a wafer is placed in the chamber. The method of claim 1, The induction part is the semiconductor device manufacturing equipment, characterized in that the installation is made in close proximity to the site of the discharge of various gases. The method according to claim 4 or 5, And a purge gas supply nozzle connected to an external purge gas supply line to supply a purge gas to guide the flow of the fluid from the induction part to the discharge part inside the chamber. An induction part is provided to maintain and maintain a lower temperature state than other components around each part in which various gases are discharged, including an inside of a chamber in which a process is performed, and is connected to an external purge gas supply line inside the chamber. And a purge gas supply nozzle for supplying purge gas to induce the flow of the fluid toward the discharge portion from the Providing a vacuum pressure from the bottom of the chamber after completion of the process; And supplying a purge gas to guide the flow of the fluid from the periphery of the induction part to the part where the vacuum pressure is provided in the process of providing the vacuum pressure.