KR20040040103A - ESC Assembly with Lift Pins of Conductive Material - Google Patents
ESC Assembly with Lift Pins of Conductive Material Download PDFInfo
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- KR20040040103A KR20040040103A KR1020020068434A KR20020068434A KR20040040103A KR 20040040103 A KR20040040103 A KR 20040040103A KR 1020020068434 A KR1020020068434 A KR 1020020068434A KR 20020068434 A KR20020068434 A KR 20020068434A KR 20040040103 A KR20040040103 A KR 20040040103A
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- wafer
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- lift pin
- conductive material
- chuck assembly
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
본 발명은 공정챔버 내부에 설치되어 웨이퍼를 정전기력에 의해 고정시키는 반도체 제조용 정전척(Electric Static Chuck; 이하 ESC) 어셈블리에 관한 것으로, 상세하게는 웨이퍼에 잔류하는 전하를 효과적으로 방전시킬 수 있는 리드핀을 구비한 정전척 어셈블리에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic chuck (ESC) assembly for semiconductor manufacturing that is installed inside a process chamber to fix a wafer by electrostatic force. Specifically, the present invention relates to a lead pin capable of effectively discharging a charge remaining on a wafer. It relates to an electrostatic chuck assembly provided.
웨이퍼를 가공하는 식각공정, 증착공정 등에서는 웨이퍼를 고정시킨 상태에서 공정이 진행된다. 여기서, 웨이퍼의 고정은 진공에 의한 고정 또는 정전기력에 의한 고정 등의 방법이 있으며, 고정방법의 선택은 공정의 특성에 따라 결정된다.In an etching process, a deposition process, or the like, in which a wafer is processed, the process is performed while the wafer is fixed. Here, the wafer is fixed by vacuum or by electrostatic force. The selection of the fixing method is determined by the characteristics of the process.
정전기력에 의하여 웨이퍼를 고정하는 정전척 어셈블리를 갖는 에칭장비의 공정은 보통 3가지 스텝으로 나뉘어져 진행된다. 첫번째 스텝은 웨이퍼를 정전척 표면과 밀착시켜 잡아주는 척킹스텝(chucking step), 두번째 스텝은 웨이퍼를 식각하여 주는 에칭스텝(etching step), 그리고 세번째 스텝은 정전척 표면과 밀착되어 있는 웨이퍼를 이탈시키는 디척킹스텝(de-chucking step)이다.The process of an etching apparatus having an electrostatic chuck assembly that fixes a wafer by electrostatic force is usually divided into three steps. The first step is a chucking step that holds the wafer in close contact with the surface of the electrostatic chuck, the second step is an etching step that etches the wafer, and the third step leaves the wafer in close contact with the surface of the electrostatic chuck. It is a de-chucking step.
도1은 공정챔버 내에서 웨이퍼가 정전척에 안착된 상태를 개략적으로 도시하고 있다. 제 1 도에 도시된 바와 같이, 플라즈마 상태의 공정챔버(17)내에 고주파 전원에 연결된 상부전극(11) 및 하부전극(12)이 구비되고, 상부전극 및 하부전극 사이에 위치된 정전척(10)은 절연막(15)에 의해 웨이퍼(13)와 절연된 상태를 유지하며, 리프트 핀(16)이 웨이퍼를 정전척(10)에 안착시키거나 이탈시키기 위하여 업/다운된다. 도1에는, 리프트 핀이 하나만 도시되어 있으나, 4개의 리프트 핀으로 구성되어 있으며, 이들 중 하나는 조절용 리프트 핀으로 사용된다.1 schematically shows a state in which a wafer is seated on an electrostatic chuck in a process chamber. As shown in FIG. 1, an electrostatic chuck 10 disposed between an upper electrode and a lower electrode is provided in the process chamber 17 in a plasma state, the upper electrode 11 and the lower electrode 12 connected to a high frequency power source. ) Is insulated from the wafer 13 by the insulating film 15, and the lift pin 16 is up / down to seat or detach the wafer from the electrostatic chuck 10. In Fig. 1, only one lift pin is shown, but it consists of four lift pins, one of which is used as an adjustable lift pin.
이러한 구조를 갖는 정전척 어셈블리에서, 외부로 부터 이송된 웨이퍼(30)는 구동실린더(미도시)에 의해 상승된 리프트 핀(16) 위에 놓여지고, 한편 정전척(10)으로는 일정한 직류전원이 인가된다. 이후, 리프트 핀(16)은 하강되어 웨이퍼(13)를 정전척(10) 상면에 위치시키고, 한편 정전척(10)과 웨이퍼(13), 리프트 핀(16)은 전기적인 폐회로를 형성하여 웨이퍼를 정전기력에 의해 고정하게 된다. 그리고, 웨이퍼(13)가 고정된 상태에서 인입구를 통해 유입된 공정가스가 양전극에 인가된 고주파 전원에 의해 플라즈마로 형성되어 웨이퍼(13)를 식각하게 된다.In the electrostatic chuck assembly having such a structure, the wafer 30 transferred from the outside is placed on the lift pin 16 lifted by a driving cylinder (not shown), while the electrostatic chuck 10 has a constant DC power supply. Is approved. Thereafter, the lift pin 16 is lowered to position the wafer 13 on the top surface of the electrostatic chuck 10, while the electrostatic chuck 10, the wafer 13, and the lift pin 16 form an electrical closed circuit to form a wafer. It is fixed by the electrostatic force. In addition, the process gas introduced through the inlet while the wafer 13 is fixed is formed into a plasma by a high frequency power source applied to the positive electrode to etch the wafer 13.
그리고, 식각이 완료되면 정전척(10)으로 인가되는 직류전원은 오프(off)되고, 리프트 핀(16)은 구동실린더(미도시)에 의해 웨이퍼(13)를 정전척(10)으로부터 상향으로 들어올리게 된다. 이때, 정전척(10)의 직류전원이 오프(off)되더라도 웨이퍼(13) 및 정전척(10)에는 잔류전하가 존재하며, 이 잔류전하는 접지된 리프트 핀(16)을 통해 계속적으로 방전된다.When the etching is completed, the DC power applied to the electrostatic chuck 10 is turned off, and the lift pin 16 moves the wafer 13 upward from the electrostatic chuck 10 by a driving cylinder (not shown). Will be lifted. At this time, even when the DC power supply of the electrostatic chuck 10 is turned off, residual charge exists in the wafer 13 and the electrostatic chuck 10, and the residual charge is continuously discharged through the grounded lift pin 16.
여기서, 잔류전하는 접지된 리프트 핀을 통해 방전시키게 되는데, 이 과정에서 정전척 표면과 웨이퍼 상의 잔류 전하가 완전하게 방전되지 않아, 리프트 핀으로 웨이퍼를 들어올릴 때 정전척 표면과 웨이퍼상의 잔류 전하로 인한 잔존 흡착력에 의해 웨이퍼가 튕겨져 리프트 핀에서 이탈되거나, 접촉점에서 전위차에 의해 순간적인 불꽃 방전(arc)이 발생되어 웨이퍼를 손상되는 경우가 발생할 수 있다. 이와같이, 정전척 표면이나 웨이퍼에 잔존하는 잔류전하가 완전하게 방전되지 않는 것은 리프트 핀의 재질이 세라믹 등으로 되어 있어서, 방전효과가 떨어지기 때문인 것으로 분석된다.Here, the residual charge is discharged through the grounded lift pin. In this process, the residual charge on the surface of the electrostatic chuck and the wafer is not completely discharged. The wafer may be bounced off the lift pin by the remaining adsorptive force, or a momentary spark discharge may occur due to a potential difference at the contact point, thereby damaging the wafer. Thus, it is analyzed that the residual charge remaining on the surface of the electrostatic chuck or the wafer is not completely discharged because the lift pin is made of ceramic or the like, and the discharge effect is inferior.
본 발명은 이러한 문제점을 해결하기 위한 것으로, 정전척 내지 웨이퍼에 잔존하는 전하를 효과적으로 방전하고, 이를 통해 잔류전하로 인하여 발생하는 아크 손상 또는 웨이퍼 파손을 방지하는 것을 목적으로 한다.The present invention is to solve this problem, it is an object to effectively discharge the charge remaining in the electrostatic chuck to the wafer, thereby preventing arc damage or wafer breakage caused by the residual charge.
도1은 공정챔버 내에서 웨이퍼가 정전척에 안착된 상태의 개략도, 그리고1 is a schematic view of a state in which a wafer is seated on an electrostatic chuck in a process chamber; and
도 2a 및 2b는 고정 및 조절 리프트 핀의 단면도이다.2A and 2B are cross-sectional views of fixed and adjustable lift pins.
-도면의 주요부분에 대한 부호의 설명-Explanation of symbols on the main parts of the drawing
11: 상부전극12: 하부전극11: upper electrode 12: lower electrode
13: 웨이퍼14: 고주파 공급전원13: wafer 14: high frequency power supply
15: 절연막16: 리프트 핀15: insulating film 16: lift pin
17: 공정챔버17: process chamber
이러한 목적을 달성하기 위하여 본 발명은 리프트 핀을 전기전도도가 큰 재질로 구성하여, 정전척 내지 웨이퍼에 잔류하는 전하를 신속히 방전시킬 수 있는 정전척 어셈블리를 제공한다.In order to achieve the above object, the present invention provides an electrostatic chuck assembly capable of quickly discharging a charge remaining in the electrostatic chuck or the wafer by configuring the lift pin with a material having high electrical conductivity.
이하, 첨부도면을 참조하여 본 발명을 상세히 설명한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
도 2a 및 2b는 고정 및 조절 리프트 핀의 단면도이다. 도2a 및 2b에서, 리프트 핀은 전기적 전도성을 갖는 재질로 구성된다. 전도성을 갖는 재질은 순수한 알루미늄, 니켈, SUS 등의 금속이다.2A and 2B are cross-sectional views of fixed and adjustable lift pins. 2A and 2B, the lift pins are made of a material having electrical conductivity. The conductive material is a metal such as pure aluminum, nickel or SUS.
전도성을 갖는 재질로 구성된 리프트 핀의 외부를 코팅할 수 있다. 다만, 코팅되는 부분은 웨이퍼와 접촉하는 상부면을 제외한 부분으로 하는 것이 바람직하다. 그러나, 코팅되는 재질이 전도성을 가지는 경우에는 상부면을 포함하는 리프트 핀 전체를 코팅할 수 있다.The outside of the lift pin made of a conductive material may be coated. However, the portion to be coated is preferably a portion except the upper surface in contact with the wafer. However, when the material to be coated has conductivity, the entire lift pin including the upper surface may be coated.
한편, 리프트 핀의 코팅에서 플라즈마 상태의 공정가스에 의한 부식 내지 식각을 방지하기 위하여 코팅이 이루어질 수 있다. 코팅의 방법에는 세라믹 코팅, 산화 코팅, 테프론 코팅 등의 다양한 방법이 사용될 수 있다.Meanwhile, the coating may be performed to prevent corrosion or etching by the process gas in the plasma state in the coating of the lift pin. As the method of coating, various methods such as ceramic coating, oxide coating, Teflon coating and the like can be used.
알루미늄으로 구성된 리프트 핀의 외부를 내부식성 막으로 코팅하는 경우의 예를 보면 다음과 같다. 먼저, 무전해(electroless) 및 전기도금과 같은 도금법, 스퍼터링법, 침지 코팅(immersion coating)법 또는 화학기상증착법을 포함하는 여러 기술을 사용하여 알루미늄 표면에 인 니켈층을 코팅한다. 이때, 코팅될 물질의 용이한 접착을 위하여, 알루미늄의 표면은 코팅을 하기 전에 산화막 또는 그리스(grease) 등의 표면상 물질을 완전히 제거하는 것이 바람직하다.An example of coating the outside of an aluminum lift pin with a corrosion resistant film is as follows. First, a phosphorus nickel layer is coated on an aluminum surface using various techniques including plating methods such as electroless and electroplating, sputtering, immersion coating, or chemical vapor deposition. At this time, for easy adhesion of the material to be coated, it is preferable that the surface of aluminum be completely removed from the surface material such as an oxide film or grease before coating.
다음으로, 알루미늄 표면에 인 니켈 코팅막을 코팅한 후, 세라믹 물질막을코팅하기 위하여 인 니켈 코팅막을 송풍 등에 의해 거칠게 한다. 표면이 거칠게 된 인 니켈 코팅막은 용융 세라믹 입자와의 양호한 결합을 제공한다. 세라믹 물질은 인 니켈 코팅막 상에 열적으로 스프레이(spray)되며, 이후 세라믹 코팅막이 냉각됨에 따라 거칠게 된 인 니켈 코팅막에 높은 기계적 압축력을 가하여 세라믹 코팅막에 균열이 발생하는 것을 최소화한다. 세라믹 코팅막은 세라믹 물질 또는 Al2O3, SiC, Si3N34, BC, AlN, TiO2등과 같은 물질의 결합으로 이루어진다. 세라믹 코팅막은 화학기상증착 또는 RF 스퍼터링과 같은 증착 기술을 이용할 수 있으며, 바람직한 코팅 방법은 대상 부품으로 향하는 가스 흐름에 의하여 용융된 세라믹 분말을 결합시키는 열 스프레이(thermal spraying)법을 이용하는 것이 바람직하다.Next, after the phosphorus nickel coating film is coated on the aluminum surface, the phosphorus nickel coating film is roughened by blowing or the like to coat the ceramic material film. The roughened surface of the nickel nickel coating film provides good bonding with the molten ceramic particles. The ceramic material is thermally sprayed onto the nickel nickel coating layer, and then a high mechanical compressive force is applied to the roughened phosphorus nickel coating layer as the ceramic coating layer is cooled to minimize the occurrence of cracking in the ceramic coating layer. The ceramic coating film is made of a ceramic material or a combination of materials such as Al 2 O 3 , SiC, Si 3 N 34 , BC, AlN, TiO 2, and the like. The ceramic coating film may use a deposition technique such as chemical vapor deposition or RF sputtering, and a preferred coating method may be a thermal spraying method in which molten ceramic powder is bonded by a gas flow directed to a target component.
이와같이 전도성 금속 자체 또는 코팅된 전도성 금속으로 구성되는 리프트 핀을 갖는 정전척 어셈블리의 작용을 보면 다음과 같다.As described above, the action of the electrostatic chuck assembly having the lift pin composed of the conductive metal or the coated conductive metal is as follows.
정전척에 의하여 이루어지는 정전척의 척킹 시퀀스에 따라 웨이퍼의 방전 상태를 보면, 공정 챔버에서 공정이 완료된 후 고주파 공급전원이 턴오프되고, 1 내지 2초 후에 정전척 전원도 오프되면서, 공정 중에 방전되지 않고 잔류하는 웨이퍼나 정전척 상의 잔류전하들이 양호한 전도성을 갖는 리프트 핀에 의해 신속히 방전된다. 접지된 리프트 핀에 의한 신속한 방전 프로세싱 후에는, 로봇 핸들링 시스템에 의하여 웨이퍼가 공정챔버에서 언로딩된다. 언로딩 이후에 다음의 웨이퍼가 공정챔버로 다시 로딩될 때에는 고주파 공급전원이 턴온되고 0.7초 경과 후에 정전척 전압이 턴온되면서 웨이퍼 척킹이 이루어지고, 연이어 에칭공정이 진행된다.이러한 시퀀스에 의해 척킹 및 디척킹이 반복된다.According to the discharge state of the wafer according to the chucking sequence of the electrostatic chuck made by the electrostatic chuck, the high frequency power supply is turned off after the process is completed in the process chamber, and the electrostatic chuck power is also turned off after 1 to 2 seconds, without being discharged during the process. Residual charges on the remaining wafer or electrostatic chuck are quickly discharged by the lift pins with good conductivity. After rapid discharge processing by the grounded lift pins, the wafer is unloaded from the process chamber by the robot handling system. After the unloading, when the next wafer is reloaded into the process chamber, the high frequency power supply is turned on and after 0.7 seconds, the electrostatic chuck voltage is turned on, and the wafer chucking is performed, followed by the etching process. Dechucking is repeated.
이러한 방전과정에서 알 수 있는 바와같이, 공정이 완료된 후에 웨이퍼의 이송이 빠른 시간 내에 이루어지므로 웨이퍼 등에 잔류하는 전하의 신속한 방전이 요구되고 있으며, 이러한 요구는 공정 진행중에 방전되지 못하고 잔류하는 전하의 신속한 방전은 양호한 전기적 전도성을 갖는 리프트 핀에 의해 충분히 달성될 수 있다.As can be seen in this discharging process, since the transfer of the wafer is performed in a short time after completion of the process, a rapid discharge of the charge remaining in the wafer is required. Discharge can be sufficiently achieved by lift pins with good electrical conductivity.
이러한 구성 및 작용의 리프트 핀을 갖는 정전척 어셈블리에 의하면, 공정이 완료된 후에도 정전척 내지 웨이퍼에 잔류하는 전하를 신속하게 방전할 수 있고, 이를 통해 잔류전하로 인하여 야기될 수 있는 웨이퍼 아크 손상 또는 웨이퍼 튕김 파손 등을 효과적으로 방지할 수 있다.According to the electrostatic chuck assembly having the lift pin of this configuration and function, it is possible to quickly discharge the charge remaining in the electrostatic chuck or the wafer even after the process is completed, thereby allowing wafer arc damage or wafers to be caused by residual charge. It can effectively prevent the breakage and the like.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020020068434A KR20040040103A (en) | 2002-11-06 | 2002-11-06 | ESC Assembly with Lift Pins of Conductive Material |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020020068434A KR20040040103A (en) | 2002-11-06 | 2002-11-06 | ESC Assembly with Lift Pins of Conductive Material |
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| Publication Number | Publication Date |
|---|---|
| KR20040040103A true KR20040040103A (en) | 2004-05-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| KR1020020068434A KR20040040103A (en) | 2002-11-06 | 2002-11-06 | ESC Assembly with Lift Pins of Conductive Material |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040040681A (en) * | 2002-11-07 | 2004-05-13 | 삼성전자주식회사 | Wafer support of a semiconductor device fabrication apparatus |
| KR100780366B1 (en) * | 2005-10-12 | 2007-11-29 | 세메스 주식회사 | Semiconductor manufacturing apparatus |
| CN102820250A (en) * | 2012-08-14 | 2012-12-12 | 沈阳拓荆科技有限公司 | Sectional pin for semiconductor coating equipment |
| WO2018144452A1 (en) * | 2017-02-02 | 2018-08-09 | Applied Materials, Inc. | Applying equalized plasma coupling design for mura free susceptor |
| WO2022019487A1 (en) * | 2020-07-24 | 2022-01-27 | 이준호 | Conductive electrode static chuck lift pin, electrode static chuck comprising same, and semiconductor manufacturing method using same |
-
2002
- 2002-11-06 KR KR1020020068434A patent/KR20040040103A/en not_active Application Discontinuation
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040040681A (en) * | 2002-11-07 | 2004-05-13 | 삼성전자주식회사 | Wafer support of a semiconductor device fabrication apparatus |
| KR100780366B1 (en) * | 2005-10-12 | 2007-11-29 | 세메스 주식회사 | Semiconductor manufacturing apparatus |
| CN102820250A (en) * | 2012-08-14 | 2012-12-12 | 沈阳拓荆科技有限公司 | Sectional pin for semiconductor coating equipment |
| WO2018144452A1 (en) * | 2017-02-02 | 2018-08-09 | Applied Materials, Inc. | Applying equalized plasma coupling design for mura free susceptor |
| WO2022019487A1 (en) * | 2020-07-24 | 2022-01-27 | 이준호 | Conductive electrode static chuck lift pin, electrode static chuck comprising same, and semiconductor manufacturing method using same |
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