KR20040037643A - A composition for post-strip cleaning and a post-strip cleaning process of semiconductor device or liquid crystal display using the same - Google Patents

Abstract

PURPOSE: Provided is an environmental-friendly and economical post-strip washing agent composition, which has excellent corrosion resistance to a metal layer and washing power. CONSTITUTION: The post-strip washing agent composition is used for removing residues generated from a step of stripping a photoresist in a metallization step during the manufacturing process for a semiconductor device or a liquid crystal display device. The post-strip washing agent composition comprises: (a) 0.01-10 wt% of an alkanolamine compound; (b) 0.01-50 wt% of an alkyleneglycol alkylether compound; (c) 0.01-10 wt% of a hydroxybenzene compound; and (d) the balance amount of deionized water, based on the total weight of the composition.

Description

A post-strip cleaner composition and a method for cleaning a semiconductor device or a liquid crystal display device after a photoresist strip process using the same, and a method for cleaning a semiconductor device or a liquid crystal display device according to the same.

The present invention relates to a cleaning agent (hereinafter referred to as a post-strip cleaning agent) that can be used to remove residues that may occur after the photoresist strip in the metallization process of semiconductor devices and liquid crystal display devices. The present invention relates to a cleaning method for a semiconductor device and a liquid crystal display device using the post-strip cleaning agent.

In the manufacturing process of the semiconductor device or the liquid crystal display device, the metallization forming process is generally performed as illustrated in FIGS. 1A to 1D.

That is, the process is carried out by a method consisting of the following processes:

(1) a step of sequentially forming a metal layer 20 and a photoresist layer 30 on a substrate 10 commonly used (FIG. 1A);

(2) a photolithography process of irradiating light on a portion where wiring is to be formed to remove the photoresist layer thereon, and transferring the mask pattern onto the photoresist layer (FIG.

(3) an etching process of wet and / or dry etching the wiring forming portion to form metal wiring, that is, etching of the metal film along the pattern (FIG. 1C); And

(4) A stripping process for removing the photoresist layer remaining after the wiring is formed (FIG. 1D).

As shown in FIG. 1D, the strip process of removing the exposure-patterned photoresist layer is usually performed by a wet strip method or the like using a strip solution capable of dissolving the photoresist layer.

As a solution which strips a patterned photoresist layer, the use of single or mixed use, such as an inorganic acid, an inorganic base, or an organic solvent, is mentioned normally. However, in the case of using an inorganic acid or an inorganic base as the strip solution, it is common to use an organic solvent because of the difficulty in operation, and in recent years, many amine strippers containing a polar solvent and an amine have been used.

The amine component in the amine strip solution composition is known to be essential for effectively removing the crosslinked resist film by baking or the like. However, amine-based photoresist strip solutions sometimes cause serious problems of corrosion, especially when aluminum, copper and the like are used as metal films.

This corrosion is believed to be caused by the residual strip solution remaining on the substrate surface after stripping, resulting in water ionized by the amine component in the residual strip solution upon post-strip cleaning with water. In other words, the amine component itself in the strip composition does not corrode the substrate, but corrosion may occur when contacted with water used for post-strip cleaning.

In addition to this corrosion problem, due to the difference in solubility of foreign matter in the strip solution and water, the material dissolved in the residual strip solution may be deposited on the substrate when washed with water immediately after the strip.

In order to solve this problem, it was considered to introduce an intermediate cleaning step using an organic solvent between the strip step and the post-strip cleaning step using water. For example, isopropyl alcohol is known to be useful for this purpose.

In addition, many studies have been conducted for the development of the post-strip cleaner for the above purpose, the following post-strip cleaner was developed.

U. S. Patent No. 5,798, 323 discloses non-corrosive photoresist strip solutions and cleaning solutions containing solvents (e.g. glycols), alkanolamines (e.g. monoethanolamines) and corrosion inhibitors.

U. S. Patent No. 5,997, 658 also discloses an aqueous strip solution and cleaning solution containing alkanolamines (e.g. monoethanolamine), corrosion inhibitors (e.g. benzotriazole, gallic acid, etc.).

In addition, US Pat. No. 6,399,551 discloses a residue removal process containing an alkanolamine (e.g. monoethanolamine), a chelating agent (e.g. gallic acid), a hydroxylamine, and a polar organic solvent (e.g. glycols). The lyric solution is disclosed.

However, the organic solvent cleaner proposed in this prior art is not advantageous in terms of environmental aspects and processing costs, and has a limitation in cleaning residues.

Meanwhile, Korean Patent Application No. 2001-0017704 discloses a composition containing an organic acid (e.g. citric acid) and an organic solvent (e.g. glycols), and Korean Patent Application No. 10-2001-0017705 discloses an amine (e.g. alkanolamine). Although a composition containing an organic solvent (e.g. glycols) and a corrosion inhibitor (e.g. citric acid) has been disclosed for the above purpose, the cleaning agents proposed by these agents are excellent in corrosion resistance, but have a disadvantage in that the cleanability is somewhat poor. have.

Therefore, the present inventors also can effectively prevent the corrosion caused by the residual strip solution after the strip process in the metal wiring forming process of the semiconductor device and the liquid crystal display device, while cleaning the residue after the photoresist strip Much research has been conducted to develop excellent post-strip cleaners and find that compositions comprising amine compounds, glycol ether derivative compounds, and benzene compounds can effectively achieve both of the above properties and complete the present invention. It came to the following.

It is therefore an object of the present invention to provide a novel post-strip cleaner that can be used to remove residues that may occur after a photoresist strip in the metallization process of semiconductor devices and liquid crystal display devices.

Another object of the present invention is to provide a cleaning method that effectively removes residues that may occur after using an amine strip solution in a strip process in a semiconductor device and a liquid crystal display device, and does not cause corrosion. .

1A to 1D are diagrams sequentially illustrating a metallization forming process.

2 is a view illustrating a state in which residues may be formed after a metallization process.

* Explanation of symbols for main parts of the drawings

10: substrate 20: metal layer

30 photoresist layer 40 residue

In order to achieve the above object, the post-strip cleaner composition according to the present invention, with respect to the total weight of the composition,

(a) 0.01-10% by weight of alkanolamine compound:

(b) 0.01-50% by weight of alkylene glycol alkyl ether compound:

(c) 0.01 to 10% by weight of hydroxybenzene compounds:

(d) a residual amount of deionized water.

According to the present invention, the composition is very useful for removing organic substances remaining on a metal or glass substrate, such as aluminum or copper, after a stripping process in a metal wiring forming process of a semiconductor device or a liquid crystal display device. In particular, problems such as corrosion, which are particularly problematic in conventional cleaners, can also be solved.

Hereinafter, the present invention will be described in more detail.

According to the present invention, the alkanolamine compound in the cleaning composition of the present invention effectively removes the crosslinked resist film by baking or the like during semiconductor manufacturing, and serves to dissolve the organic material. For this action, examples of alkanolamine compounds which can be used in the present invention are, for example, mono-, di- or tri-ethanolamine, mono-, di- or tri-propanolamine, mono-, di- or Mono-, di- and tri-alkanolamines such as tri-isopropanolamine, butanolamine, butyl monoethanolamine, ethyl diethanolamine and the like, although the present invention is not limited thereto. More preferably, monoethanolamine, diethanolamine, triethanolamine, monoisopropanolamine or mixtures thereof are used. In particular, monoisopropanolamine may be most preferably used because of its particularly high hydrophilicity and easy removal from the substrate during water washing.

On the other hand, when the alkanolamine compound is used in less than 0.01% by weight in the composition according to the present invention, it may be difficult to completely remove the photoresist that is not removed in the strip process, which is a preceding process, more than 10% by weight When used, since the problem of the corrosiveness to the lower metal film may increase, it is preferable that the composition according to the present invention contains the alkanolamine compound at 0.01 to 10% by weight.

According to the present invention, the alkylene glycol alkyl ether compound can improve the dissolving power of the organic material, thereby improving the very good washing power in the post-strip washing. In general, the glycol ether derivative may function as a very good solvent in which water and an organic solvent are mixed well as a solvent by sharing an ether group and a hydroxyl group in a molecule. According to the present invention, the addition of such glycol ether compounds can enhance the cleaning effect, especially when mixed with alkanolamine compounds. As the alkylene glycol alkyl ether compound, for example, monoalkylene glycol alkyl ether, dialkylene glycol alkyl ether, trialkylene glycol alkyl ether such as the following compounds may be mentioned, but the present invention is limited thereto. no:

CH ₃ CH ₂ CH ₂ CH ₂ —OCH ₂ CH ₂ —OH;

CH ₃ CH ₂ CH ₂ CH ₂ —OCH ₂ CH ₂ —OCH ₂ CH ₂ —OH;

CH ₃ CH ₂ CH ₂ CH ₂ —OCH ₂ CH ₂ —OCH ₂ CH ₂ —OCH ₂ CH ₂ —OH;

CH ₃ CH ₂ CH ₂ CH ₂ —OCH ₂ CH ₂ —OCH ₂ CH ₂ —OCH ₂ CH ₂ —OCH ₂ CH ₂ —OH;

CH ₃ -OCH ₂ CH ₂ -OH;

CH ₃ -OCH ₂ CH ₂ -OCH ₂ CH ₂ -OH;

CH ₃ -OCH ₂ CH ₂ -OCH ₂ CH ₂ -OCH ₂ CH ₂ -OH;

CH ₃ -OCH ₂ CH ₂ -OCH ₂ CH ₂ -OCH ₂ CH ₂ -OCH ₂ CH ₂ -OH;

CH ₃ -OCH ₂ CH ₂ CH ₂ -OH;

CH ₃ -OCH ₂ CH ₂ CH ₂ -OCH ₂ CH ₂ CH ₂ -OH;

CH ₃ -OCH ₂ CH ₂ CH ₂ -OCH ₂ CH ₂ CH ₂ -OCH ₂ CH ₂ CH ₂ -OH;

CH ₃ -OCH ₂ CH ₂ CH ₂ -OCH ₂ CH ₂ CH ₂ -OCH ₂ CH ₂ CH ₂ -OCH ₂ CH ₂ CH ₂ -OH.

Especially preferably, ethylene glycol monobutyl ether, diethylene glycol monobutyl ether, triethylene glycol monobutyl ether, ethylene glycol monomethyl ether, diethylene glycol monomethyl ether, triethylene glycol monomethyl ether, propylene glycol monomethyl ether , Dipropylene glycol monomethyl ether, tripropylene glycol monomethyl ether or mixtures thereof are used.

On the other hand, when the alkylene glycol alkyl ether compound is used in less than 0.01% by weight in the composition according to the present invention, it is difficult to completely remove the photoresist that has not been removed in the preceding strip process, when used in excess of 50% by weight, Since subsequent problems in water washing may cause a problem of inferior hydrophilicity and poor cleaning ability, the composition according to the present invention preferably contains 0.01 to 50% by weight of an alkylene glycol alkyl ether compound.

In the composition according to the present invention, the hydroxybenzene compounds used as corrosion inhibitors in the present invention not only protect the metal from the generation of hydroxyl groups that cause metal corrosion such as aluminum, but also cause chelate reactions with metal substances in the polymer. By removing it, they can be prevented from resorbing to the polymer. Therefore, by adding an appropriate amount of hydroxybenzene compounds, it is possible not only to protect metal layers such as aluminum from corrosion, but also to effectively remove metal ion contaminants in the residue. However, when the hydroxybenzene compound is used in less than 0.01% by weight, there is a problem that the corrosiveness to the lower metal film quality increases, and when used in excess of 10% by weight may cause a problem that the removal force of the photoresist falls. Therefore, the composition according to the present invention preferably contains 0.01 to 10% by weight or more of hydroxybenzene compounds.

On the other hand, specific examples of hydroxybenzene compounds include benzene substituted with one or more hydroxy groups, for example 1,2-dihydroxybenzene, 1,3-dihydroxybenzene, 1,4-dihydroxybenzene, And 1,2,3-trihydroxybenzene and 1,3,5-trihydroxybenzene. Especially preferred hydroxybenzene compounds are 1,2-dihydroxybenzene and 1,3-dihydroxy. Benzene, 1,4-dihydroxybenzene or mixtures thereof.

On the other hand, the composition according to the present invention, in addition to the above-described components, may further include a surfactant, an antifoaming agent or a mixture thereof as a material commonly added to the post-strip cleaner.

That is, the composition according to the present invention may use a surfactant as an additive to improve uniformity of cleaning, and an antifoaming agent as an additive for suppressing bubble generation that interferes with cleaning. The amount of the additive is not limited, but based on 100 parts by weight of the total composition consisting of the components (a), (b), (c) and (d), the amount of these additives is 20 parts by weight or less, preferably 5 parts by weight or less. It is included. Meanwhile, examples of surfactants and antifoaming agents that can be used are commonly known in the art, and for example, surfactants may be amphoteric, cationic, anionic, nonionic, or fluorine-based surfactants. Silicone or non-silicone antifoaming agents may be used.

On the other hand, the present invention also provides a cleaning method after stripping of a semiconductor device and a liquid crystal display device using the above-described strip cleaning composition.

The cleaning method according to the invention can preferably be used to remove residues which may occur after using the strip solution.

The cleaning is usually carried out by immersion in the cleaning solution according to the invention under known cleaning conditions. As the cleaning conditions described above, the temperature is usually from room temperature to 70 ° C, preferably from room temperature to 50 ° C, and the residence time is usually from 5 seconds to 10 minutes, preferably from 30 seconds to 5 minutes, but the method according to the present invention It is not exact with respect to conditions and can be easily adapted by those skilled in the art.

EXAMPLE

Hereinafter, the present invention will be described in more detail with reference to the following examples, but the present invention is not limited to these examples.

Example 1

(1) detergency evaluation

The aluminum substrate coated with the photoresist (ZPP-1800, manufactured by Xeon, Japan) was treated with a stripper containing monoethanolamine as a main component, and then washed with the solution shown in Table 1 at room temperature for about 1 minute, followed by deionized water for 1 minute. After drying, the surface of the substrate was observed through a microscope, and the cleaning ability of each solution was evaluated by the following evaluation criteria.

(2) Corrosion evaluation

The aluminum substrate was treated with a stripper containing monoethanolamine, and then washed with the following solution at room temperature for about 1 minute, followed by 1 minute with deionized water, and the substrate was dried. The surface of the substrate was observed through a microscope, and the corrosiveness of each solution was evaluated by the following evaluation criteria.

Evaluation standard One 2 3 Good usually Bad

Good: Complete removal of photoresist residue, or no corrosion at all.

Medium: Removes more than 80% of photoresist residue, or generates some corrosion.

Poor: Photoresist residue not removed, or badly corroded.

The results are shown in Table 1 below.

No. solution Detergency causticity One Deionized water 3 3 No. Alkanolamine Compound (1 wt.%) Hydroxybenzene compounds (5 wt.%) Detergency causticity 2 Monoethanolamine No addition 2 3 3 1,2-dihydroxybenzene 2 One 4 1,2,3-trihydroxybenzene 2 One 5 Diethanolamine No addition 2 3 6 1,2-dihydroxybenzene 2 One 7 1,2,3-trihydroxybenzene 2 One 8 Triethanolamine No addition 2 3 9 1,2-dihydroxybenzene 2 One 10 1,2,3-trihydroxybenzene 2 One 11 Monoisopropanolamine No addition 2 3 12 1,2-dihydroxybenzene 2 One 13 1,2,3-trihydroxybenzene 2 One

Example 2

(1) detergency evaluation

The aluminum substrate coated with the photoresist (ZPP-1800, manufactured by Xeon, Japan) was treated with a stripper containing monoethanolamine as a main component, and then washed with the solution shown in Table 1 at room temperature for about 1 minute, followed by deionized water for 1 minute. After drying, the surface of the substrate was observed through a microscope, and the cleaning ability of each solution was evaluated by the following evaluation criteria.

(2) Corrosion evaluation

The aluminum substrate was treated with a stripper containing monoethanolamine, and then washed with the following solution at room temperature for about 1 minute, followed by 1 minute with deionized water, and the substrate was dried. The surface of the substrate was observed through a microscope, and the corrosiveness of each solution was evaluated by the following evaluation criteria.

Evaluation standard One 2 3 Good usually Bad

Good: Complete removal of photoresist residue, or no corrosion at all.

Medium: Removes more than 80% of photoresist residue, or generates some corrosion.

Poor: Photoresist residue not removed, or badly corroded.

The results are shown in Table 2 below.

No. solution Detergency causticity One Deionized water 3 3 No. Alkanolamine Compound (1wt.%) + Alkylene Glycol Alkyl Ether Compound (20wt.%) Hydroxybenzene compounds (5wt.%) Detergency causticity 2 Monoethanolamine + diethylene glycol monobutyl ether 1,2-dihydroxybenzene One One 3 1,2,3-trihydroxybenzene One One 4 Diethanolamine + diethylene glycol monobutyl ether 1,2-dihydroxybenzene One One 5 1,2,3-trihydroxybenzene One One 6 Triethanolamine + diethylene glycol monobutyl ether 1,2-dihydroxybenzene One One 7 1,2,3-trihydroxybenzene One One 8 Monoisopropanolamine + diethylene glycol monobutyl ether 1,2-dihydroxybenzene One One 9 1,2,3-trihydroxybenzene One One

Example 3

(1) detergency evaluation

The aluminum substrate coated with the photoresist (ZPP-1800, manufactured by Xeon, Japan) was treated with a stripper containing monoethanolamine as a main component, and then washed with the solution shown in Table 1 at room temperature for about 1 minute, followed by deionized water for 1 minute. After drying, the surface of the substrate was observed through a microscope, and the cleaning ability of each solution was evaluated by the following evaluation criteria.

(2) Corrosion evaluation

The aluminum substrate was treated with a stripper containing monoethanolamine, and then washed with the following solution at room temperature for about 1 minute, followed by 1 minute with deionized water, and the substrate was dried. The surface of the substrate was observed through a microscope, and the corrosiveness of each solution was evaluated by the following evaluation criteria.

Evaluation standard One 2 3 Good usually Bad

Good: Complete removal of photoresist residue, or no corrosion at all.

Medium: Removes more than 80% of photoresist residue, or generates some corrosion.

Poor: Photoresist residue not removed, or badly corroded.

The results are shown in Table 3 below.

No. Alkanolamine compounds (1 wt.%) + Azole compounds (5wt.%) Alkylene glycol alkyl ether compound (20wt.%) Detergency causticity One Monoisopropanolamine + 1,2-dihydroxybenzene Ethylene Glycol Monobutyl Ether One One 2 Diethylene glycol monobutyl ether One One 3 Triethylene Glycol Monobutyl Ether One One 4 Ethylene Glycol Monomethyl Ether One One 5 Diethylene glycol monomethyl ether One One 6 Triethylene Glycol Monomethyl Ether One One 7 Propylene Glycol Monomethyl Ether One One 8 Dipropylene Glycol Monomethyl Ether One One

Example 4

(1) detergency evaluation

The aluminum substrate coated with the photoresist (ZPP-1800, manufactured by Xeon, Japan) was treated with a stripper containing monoethanolamine as a main component, and then washed with the solution shown in Table 1 at room temperature for about 1 minute, followed by deionized water for 1 minute. After drying, the surface of the substrate was observed through a microscope, and the cleaning ability of each solution was evaluated by the following evaluation criteria.

(2) Corrosion evaluation

The aluminum substrate was treated with a stripper containing monoethanolamine, and then washed with the following solution at room temperature for about 1 minute, followed by 1 minute with deionized water, and the substrate was dried. The surface of the substrate was observed through a microscope, and the corrosiveness of each solution was evaluated by the following evaluation criteria.

Evaluation standard One 2 3 Good usually Bad

Good: Complete removal of photoresist residue, or no corrosion at all.

Medium: Removes more than 80% of photoresist residue, or generates some corrosion.

Poor: Photoresist residue not removed, or badly corroded.

The results are shown in Table 4 below.

No. detergent Detergency causticity One Deionized water 3 3 2 Diethylene glycol monobutyl ether (20 wt.%) + Monoisopropanolamine (1 wt.%) + 1,2-dihydroxybenzene (5 wt.%) + Deionized water (residue) One One 3 Isopropyl Alcohol 2 One 4 Tetramethylammonium hydroxide One 3

Example 5

(1) detergency evaluation

The aluminum substrate coated with the photoresist (ZPP-1800 manufactured by Xeon, Japan) was treated with a stripper containing monoethanolamine as a main component, and then washed with the solution shown in Table 5 for about 1 minute at room temperature, followed by 1 minute with deionized water. After drying, the surface of the substrate was observed through a microscope, and the cleaning ability of each solution was evaluated by the following evaluation criteria.

(2) Corrosion evaluation

The aluminum substrate was treated with a stripper consisting mainly of monoethanolamine, then washed with the following solution for about 1 minute at room temperature, followed by 1 minute with deionized water, and the substrate was dried. The surface of the substrate was observed through a microscope, and the corrosiveness of each solution was evaluated by the following evaluation criteria.

Evaluation standard One 2 3 Good usually Bad

Good: Complete removal of photoresist residue, or no corrosion at all.

Moderate: More than 80% photoresist residue, some removal or corrosion

Poor: Photoresist residue not removed, or badly corroded

The results are shown in Table 5 below.

No. Solution composition Detergency causticity One Deionized water (100 wt%) 3 3 No. Diethylene Glycol Monobutyl Ether Monoisopropanolamine 1,2-dihydroxybenzene Detergency causticity 2 20 One 5 One One 3 20 One 0 One 3 4 20 0 5 2 One 5 0 One 5 2 One 6 50 One 5 2 One 7 20 10 5 One 3 8 20 One 10 2 One Deionized Water (Remaining Amount)

Comparative example

(1) detergency evaluation

The aluminum substrate coated with the photoresist (ZPP-1800 manufactured by Xeon, Japan) was treated with a stripper containing monoethanolamine as the main component, followed by washing for about 1 minute at room temperature with the solution shown in Table 6 below, followed by washing with deionized water for 1 minute. After drying, the surface of the substrate was observed through a microscope, and the cleaning ability of each solution was evaluated by the following evaluation criteria.

(2) Corrosion evaluation

The aluminum substrate was treated with a stripper consisting mainly of monoethanolamine, then washed with the following solution for about 1 minute at room temperature, followed by 1 minute with deionized water, and the substrate was dried. The surface of the substrate was observed through a microscope, and the corrosiveness of each solution was evaluated by the following evaluation criteria.

Evaluation standard One 2 3 Good usually Bad

Good: Complete removal of photoresist residue, or no corrosion at all.

Moderate: More than 80% photoresist residue, some removal or corrosion

Poor: Photoresist residue not removed, or badly corroded

The results are shown in Table 4 below.

No. 20 wt.% 1 wt.% 5 wt.% Detergency causticity One Diethylene Glycol Monobutyl Ether Monoisopropanolamine 1,2-dihydroxybenzene One One 2 N-methylpyrrolidone Monoisopropanolamine 1,2-dihydroxybenzene 2 One 3 Diethylene Glycol Monobutyl Ether Monoisopropanolamine Sorbitol One 2 Deionized Water (Remaining Amount)

As described above, the cleaning solution of the present invention has excellent corrosion resistance to the metal layer but also excellent cleaning power, and corrosion of the metal layer does not occur even by subsequent deionized water treatment. It is also environmentally friendly and inexpensive because it can replace the isopropyl alcohol (IPA) and tetramethylammonium hydroxide (TMAH) cleaning steps that would normally have to be carried out immediately after the use of existing amine strippers.

Claims (6)

A detergent composition used to remove residues generated during a photoresist strip process in a metallization forming process of a semiconductor device and a liquid crystal display device, wherein the post-strip comprises the following components with respect to the total weight of the composition Detergent composition: (a) 0.01-10% by weight of alkanolamine compound: (b) 0.01-50% by weight of alkylene glycol alkyl ether compound: (c) 0.01 to 10% by weight of hydroxybenzene compounds: (d) residual deionized water. The compound of claim 1, wherein the alkanolamine compound is selected from the group consisting of monoalkanolamines, dialkanolamines and trialkanolamines; The alkylene glycol alkyl ether compound is selected from the group consisting of monoalkylene glycol alkyl ether, dialkylene glycol alkyl ether and trialkylene glycol alkyl ether; And the hydroxybenzene compound is selected from benzene substituted with one or more hydroxy groups and the like. The compound of claim 2, wherein the alkanolamine compound is selected from the group consisting of monoethanolamine, diethanolamine, triethanolamine and monoisopropanolamine; The alkylene glycol alkyl ether compound is ethylene glycol monobutyl ether, diethylene glycol monobutyl ether, triethylene glycol monobutyl ether, ethylene glycol monomethyl ether, diethylene glycol monomethyl ether, triethylene glycol monomethyl ether, propylene glycol mono Methyl ether and dipropylene glycol monomethyl ether; The hydroxybenzene compound is 1,2-dihydroxybenzene, 1,3-dihydroxybenzene, 1,4-dihydroxybenzene, 1,2,3-trihydroxybenzene, 1,3,5-tri Post-strip detergent composition, characterized in that it is selected from the group consisting of hydroxybenzene. 4. The compound of claim 3, wherein the alkanolamine compound is monoisopropanolamine; The alkylene glycol alkyl ether compound is diethylene glycol monobutyl ether; The hydroxybenzene compound is a post-strip cleaner composition, characterized in that 1,2-dihydroxybenzene. The method according to any one of claims 1 to 4, wherein 20 parts by weight of the surfactant, the antifoaming agent or a mixture thereof based on 100 parts by weight of the composition consisting of (a), (b), (c) and (d). A post-strip cleanser composition, further comprising: A cleaning method using a detergent solution for residues generated after a photoresist strip process in a metallization forming process of a semiconductor device and a liquid crystal display device, the cleaning solution according to any one of claims 1 to 4 A method for cleaning a semiconductor device or a liquid crystal display device after a photoresist strip process, comprising using a post-strip cleaner composition.