KR20040034135A - A electron beam curing apparatus of semiconductor device - Google Patents

Abstract

PURPOSE: An electron beam curing apparatus of a semiconductor device is provided to improve the uniformity of a curing process by applying voltage to the filaments formed at a chamber for generating thermal electrons. CONSTITUTION: An electron beam curing apparatus of a semiconductor device is provided with a wafer(31), a chamber for performing a curing process on the wafer, a focus ring(33) installed in the chamber for loading the wafer, a porous silicon plate type grid(35) formed at the top portion of the chamber, and a variable voltage supply part(37) for applying voltage to the grid. The electron beam curing apparatus further includes a plurality of filaments(41) formed at the upper portion of the grid in the chamber, the first and second voltage supply part for applying voltage to the predetermined portions of the filaments, a pump part(49), and a magnetic field coil(53) installed at the outer wall of the chamber.

Description

A electron beam curing apparatus of a semiconductor device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam curing apparatus for a semiconductor device. In particular, an electron beam of a semiconductor device improves yield, reliability, and integration of a device by doping electrons generated from a filament to a wafer. It relates to a curing device.

In semiconductor devices with a fine line width of less than 0.117 μm, a photomask process using a deep-UV (Ultra Violet) photoresist including ArF (193 nm) may be used. Dimension) Shrinkage occurs. As a result, during the dry etching process, line striation occurred, which drastically lowered CD uniformity.

In order to eliminate the above-mentioned problems, a curing process of doping electrons generated in the deep-UV photosensitive film using an electron beam curing device has been performed.

1 is a cross-sectional view showing an electron beam curing apparatus of a conventional semiconductor device.

Referring to FIG. 1, a chamber 101 for performing a curing process on a wafer 11 coated with a photoresist film, and a focus ring in the form of a ring, which is a seating portion of a wafer, in the chamber 101 ( 13), a grid (15) formed of a porous aluminum (Al) plate at a top portion of the chamber (101), and a low voltage supply unit (17) for applying a voltage to the grid (15). The cathode 19 formed on the upper side of the upper chamber 101 of the grid 15, the outer wall of the grid 15 and the chamber 101, and the outer wall of the cathode 19 and the chamber 101 are mutually connected. An insulator 21 for isolating, a high voltage supply unit 23 for applying a voltage to the cathode 19, and formed outside the chamber 101 to maintain a stable plasma in the chamber 101. The pump unit 25 which maintains a high vacuum of several mTorr and removes contaminants and is formed outside the chamber 101 between the chamber 101 and the pump unit 25 to It is composed of a valve portion (27) for determining whether to operate.

The operation of the electron beam curing apparatus of the conventional semiconductor device described above is as follows.

The wafer 11 coated with the photoresist film is seated on the focusing ring 13.

After the valve part 27 is opened, the pump part 25 is pumped in the pump part 25 to remove contaminants in the chamber 101 and maintain a high vacuum of several mTorr. The valve portion 27 is adjusted to keep the pressure constant.

Subsequently, after injecting a gas for generating plasma such as argon (Ar) or N _{2 into} the chamber 101, a voltage is applied to the cathode 19 by the high voltage supply unit 23, and further, the low voltage. The supply unit 17 applies a voltage to the grid 15. In this case, a plasma is generated by a high voltage applied to the cathode 19, and a plurality of electrons among the components of the generated plasma pass through the porous grid 15 by a voltage applied to the grid 15. It moves to the wafer 11.

However, the conventional electron beam curing apparatus of the semiconductor device has the following problems.

First, since the plasma is generated by applying a DC (Direct Current) voltage to the cathode and the grid, the stability of the plasma and the uniformity of the plasma distribution are not good.

Second, the metal cathode and the grid are exposed to the plasma to generate metallic particle contamination.

The present invention has been made to solve the above problems, by applying a voltage to the filaments formed in the chamber for the electron beam curing process to the wafer coated with a photosensitive film to generate hot electrons, the curing of the curing process than DC plasma SUMMARY OF THE INVENTION An object of the present invention is to provide an electron beam curing apparatus for a semiconductor device that increases uniformity.

1 is a cross-sectional view showing an electron beam curing apparatus of a conventional semiconductor device.

2 is a cross-sectional view showing an electron beam curing apparatus of a semiconductor device according to an embodiment of the present invention.

3 is a plan view showing filaments provided in the electron beam curing apparatus of the present invention.

<Description of Symbols for Main Parts of Drawings>

11,31: wafer 13,33: focusing ring

15, 35: grid 17: low voltage supply

19: cathode 21, 43: insulator

23: high voltage supply section 25, 49: pump section

27, 51: valve portion 37: variable voltage supply

39: ceramic plate 41: filament

45: first voltage supply 47 47 second voltage supply

53: magnetic field coil

The present invention for achieving the above object,

Wafers,

A chamber for performing a curing process on the wafer;

A ring-shaped focusing ring that is a seating portion of the wafer in the chamber;

A grid formed of a porous silicon plate at a top portion of the chamber,

A variable voltage supply unit applying a voltage to the grid;

A plurality of filaments formed in the chamber above the grid;

First and second voltage supply units which apply voltages to the filaments formed at the center or edge of the chamber, respectively;

A pump unit formed outside the chamber to remove contaminants in the chamber;

Providing an electron beam curing apparatus for a semiconductor device comprising a magnetic field coil formed on an outer wall of the chamber;

The plurality of filaments are fixed to a ceramic plate,

By varying the number of windings of the magnetic field coil, the strength of the magnetic field is set differently at the upper end and the lower end of the chamber.

The principle of the present invention is to generate a thermal electron by applying a voltage to a plurality of filaments formed inside the chamber top portion, and by using an electron beam curing process on the wafer by using the thermal electron, the process of curing than DC plasma To increase the uniformity.

In addition, a grid formed inside the chamber under the filaments is formed of silicon to prevent particle contamination, and a magnetic field coil is installed on the outer wall of the chamber to uniformly inject thermal electrons into the wafer. will be.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

2 is a cross-sectional view showing an electron beam curing apparatus of a semiconductor device according to an embodiment of the present invention, Figure 3 is a plan view showing the filaments provided in the curing apparatus of the present invention.

2 and 3, a chamber 101 for performing a curing process on a photosensitive film-coated wafer 31, a focusing ring 33 having a ring shape as a seating portion of the wafer in the chamber 101, and A grid 35 formed of a porous silicon (Si) plate at a top portion of the chamber 101, and a variable voltage supply unit 37 for applying a voltage to the grid 35. A plurality of filaments 41 formed in the chamber 101 above the grid 35 and fixed to the ceramic plate 39 and separating the grid 35 and the outer wall of the chamber 101 from each other The first voltage supply part 45 for applying a voltage to the insulator 43, the filament 41 formed in the center of the chamber 101, and the first filament 41 formed in the edge part of the chamber 101. A second voltage supply 47 for applying a different voltage from the voltage supply 45, which is formed outside the chamber 101, maintains a high vacuum of several mTorr and contaminates to maintain a stable plasma in the chamber 101. A pump unit 49 for removing substances, a valve unit 51 formed outside the chamber 101 between the chamber 101 and the pump unit 49 to determine whether the pump unit 49 is operated; It is composed of a magnetic field coil 53 formed on the outer wall of the chamber 101.

The operation of the electron beam curing apparatus of the semiconductor device according to the embodiment of the present invention described above is as follows.

The wafer 31 is seated on the focusing ring 33.

In addition, after opening the valve unit 51, the pump unit 49 is pumped to remove contaminants in the chamber 101 and maintain a high vacuum of several mTorr, and then the valve unit 51 is opened. To keep the pressure constant.

Subsequently, a voltage is applied to the filaments 41 by the first and second voltage supplies 45 and 47, and a variable voltage is applied to the grid 35 by the variable voltage supply 37. In this case, thermal electrons are generated by the voltage applied to the filaments 41, and the generated thermal electrons are moved through the porous grid 35 by the variable voltage applied to the grid 35.

Here, a dose of hot electrons for doping the wafer 31 by generating a magnetic field on the outer wall of the chamber 101 by the magnetic field coil 53 when the hot electrons move to the wafer 31. Control the path evenly. In addition, the strength of the magnetic field may be set differently at the upper end and the lower end of the chamber 101 by adjusting the number of windings of the magnetic field coil 53.

And as in the present invention, by applying a voltage to the filaments (41) to generate hot electrons, by installing a magnetic field coil 53 for generating a magnetic field on the outer wall of the chamber, the curing process of a wafer 300 mm or less You can proceed.

The electron beam curing apparatus of the semiconductor device of the present invention has the effect of improving the yield, reliability and integration of the device for the following reasons.

First, by applying a voltage to a plurality of filaments to generate hot electrons, the uniformity of the curing process is increased than conventional DC plasma.

Second, by forming the grid with silicon, it prevents the generation of particle contamination by the conventional metallic grid.

Third, by installing a magnetic field coil for generating a magnetic field on the outer wall of the chamber, hot electrons are uniformly incident on the wafer.

Claims (3)

Wafers, A chamber for performing a curing process on the wafer; A ring-shaped focusing ring that is a seating portion of the wafer in the chamber; A grid formed of a porous silicon plate at a top portion of the chamber, A variable voltage supply unit applying a voltage to the grid; A plurality of filaments formed in the chamber above the grid; First and second voltage supply units which apply voltages to the filaments formed at the center or edge of the chamber, respectively; A pump unit formed outside the chamber to remove contaminants in the chamber; Electron beam curing device of a semiconductor device comprising a magnetic field coil formed on the outer wall of the chamber. The method of claim 1, And the plurality of filaments are fixed to a ceramic plate. The method of claim 1, Electromagnetic beam curing device for a semiconductor device, characterized in that the magnetic field strength is set differently at the upper end and the lower end of the chamber by adjusting the number of windings of the magnetic field coil.