KR20040023941A - Ion implantation equipment furnished with means for keeping and removing particles - Google Patents

Abstract

PURPOSE: An ion implanter equipped with means for removing particles is provided to avoid damage to equipment and malfunction of the equipment by preventing particles from being transferred to a power supply or a controller installed in an acceleration unit. CONSTITUTION: An ion beam generating unit is prepared. An ion analyzing unit(320) selects a specific ion among the ions supplied by the ion beam generating unit. The acceleration unit(330) accelerates the ions selected and radiated from the ion analyzing unit. The ions accelerated in the acceleration unit are implanted into a semiconductor substrate in a process chamber unit. The means for removing particles(325) is included in the ion analyzing unit.

Description

Ion implantation equipment furnished with means for keeping and removing particles

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor manufacturing equipment, and more particularly, to an ion implantation apparatus including means for removing particles.

The ion implantation process is a process in which desired impurity atoms are made into ions in a gas state, and energy (acceleration voltage) is applied to ions in the gas state to be injected into a wafer. Ions implanted in the wafer collide with the nuclei and electrons in the wafer (or material film on the wafer) to lose energy and stop at a constant depth.

In order to control the depth of implantation of ions using an ion implantation device, the amount of acceleration voltage is controlled, and the amount of current to make gas is controlled to control the amount of implanted ions. In addition, damage may occur to the lattice of the crystal or the material film during the implantation of ions, which will be healed in a subsequent heat treatment process.

The ion implantation apparatus may be classified into a high current ion implanter, a medium current ion implanter, a high energy ion implanter, and a low energy ion implanter. FIG. 1 is a schematic diagram of some of the components commonly included in the ion implantation apparatus.

Referring to FIG. 1, the ion implantation apparatus includes a ion beam generating unit 110, an ion analyzing unit 120, an acceleration unit 130, and a process chamber unit 140. The ion beam generating unit 110 includes an ion source unit that makes a gas in an ion state, and is provided with a gas supply device (not shown) and a power supply (not shown). The ions generated from the ion source are extracted by the ion analyzing unit 120, in which ions collide with the internal electrodes to generate secondary electrons. The secondary electrons may be neutralized by colliding with the ion beam. In order to prevent such neutralization, a suppression electrode may be provided at a portion where the ion beam is extracted and a negative voltage may be applied thereto.

The ion analyzing unit 120 is a device for selecting a desired ion among various ions produced by the ion beam generating unit. This selection is carried out by means called so-called analyzing magnets 123. Various ions introduced into the tube 122 having an angle of 90 degrees or 120 degrees are separated according to the respective masses in the magnetic field induced by the analyzing magnet 123 so that only the desired ions can be selected.

And acceleration unit 130 is a device for bringing ions into a state of a predetermined energy level. Acceleration fields in the acceleration unit 130 are typically created with accelerating fields for this purpose. The acceleration field is generated by a power supply installed in the acceleration unit 130, and the strength of the acceleration field is adjusted by a controller or the like. In addition, within the acceleration unit 130 the ion beam is focused to a particular size and shape.

As such, the ion beam passing through the acceleration unit is projected to the process chamber unit 140. The process chamber unit is provided with a lens, an ion scanning means, a wader support and the like. In the process chamber unit 140, ions can be uniformly implanted by scanning means.

As described above, the ion beam finally reaches the wafer via each facility of the ion implantation apparatus. In the process of implanting ions, an ion beam strikes an aperture, an electrode, a lens, or the like, and an inner wall of a vacuum chamber or a tube. At this time, the ion beam collides with various components provided in the path through which the ion beam passes, thereby generating abrasive particles. In addition, various foreign matters may be generated due to the reaction of the toxic gas at the time of generating the ion beam.

As such, when particles are generated, the particles accumulate in various facilities of the ion implantation apparatus, such as a vacuum chamber, a vacuum tube, or a bushing. Particularly, particles are generated in the chambers and tubes of the ion beam generating unit 110 and the ion analyzing unit 120. It happens a lot and accumulates a lot of particles.

However, the vacuum system is operated while the isolation valve provided between the chamber and / or the tube of each unit is opened for the inspection and maintenance of the equipment, thereby removing the residues remaining in the chamber and / or the tube. At this time, while the high vacuum state is formed in the order of the process chamber unit 140, the acceleration unit 130, and the ion analyzing unit 120 by the vacuum system, the residue is formed by the air flow due to the pressure difference. 140 is discharged to the outside.

In this process, for example, as shown in FIG. 2, in the ion implantation apparatus according to the related art, the particles generated in the ion analyzing unit 120 pass through the isolation valve 250 that is opened and then accelerate according to the degree of vacuum. Will move toward). In this case, particles installed in the acceleration unit 130 may enter particles, such as controllers and power supply means for controlling the acceleration of ions, which may cause damage and malfunction of these devices. In addition, when a large amount of particles accumulate in the bushing that maintains the insulation of the power supply means, the insulation state worsens, and in severe cases, cracks may occur in the bushing.

In addition, particles may flow into the process chamber unit 140 during the maintenance and repair of the facility. In this case, when the ion implantation apparatus is restarted, particles introduced into the process chamber unit 140 may be a source of contamination that contaminates the wafer. If the wafer is contaminated by particles, the reliability of the semiconductor device is lowered and the yield is reduced.

In addition, since there is no means for limiting or reducing the movement of the particles in the conventional ion implantation device, particles are easily introduced into the parts of the ion implantation device relatively difficult to maintain and repair. This will not only make the maintenance and repair of the equipment itself difficult, but also increase the cost put into it.

The technical problem to be achieved by the present invention is ion implantation with particle removal means that can suppress the particles generated by the ion beam from moving to the process chamber and / tube of the other unit and also to store and remove the particles To provide a device.

1 is a configuration diagram schematically showing the configuration of an ion implantation apparatus according to the prior art,

FIG. 2 is a conceptual view illustrating a particle moving in the ion implantation apparatus of FIG. 1.

3 is a configuration diagram schematically showing the configuration of an ion implantation apparatus having a particle removing means according to the present invention,

4 is a cross-sectional view illustrating an embodiment of a particle removing means that may be included in the ion implantation apparatus of FIG. 3.

<Description of Symbols for Main Parts of Drawings>

110, 310: ion beam generating unit 120, 320: ion analyzing unit

130, 330: acceleration unit 140, 340: process chamber unit

250, 450: isolation valve 325: means for removing particles

325a: container for storing particles 325b: member for attachment

325c: Particle Guide

The ion implantation apparatus according to the present invention for achieving the above technical problem is to accelerate the ion is selected from the ion beam generating unit, ion analysis unit for selecting a specific ion of the ion provided from the ion beam generating unit, ion analysis unit radiated And a process chamber unit in which the accelerated unit is injected into the semiconductor substrate. The ion analyzing unit is provided with a means for removing particles. By means of particle removal means, it is possible to easily store and remove particles moving to the acceleration unit and the process chamber unit, thereby preventing damage and malfunction of the device by the particles and contamination of the wafer. In addition, maintenance and repair work on the ion implantation device can be carried out much more easily than in the prior art.

According to one embodiment of the present invention, the particle removing means is preferably installed at a position where the ion analyzing unit is connected to the acceleration unit.

The particle removing means may include a cup-shaped container for storing particles and an attachment member, and the particle removing means further includes a particle guide that guides the particles to the storage container. Do. In addition, it is preferable that the means for removing particles can be separated from the ion analyzer.

The particle removing means may be provided on the bottom surface of the ion analyzing unit.

An ion implantation apparatus according to another embodiment of the present invention includes an ionizing unit in which an analyzing magnet is installed in a tube through which an ion beam passes, wherein the tube of the ionizing unit is used for particle removal. Means are further provided.

In addition, it is preferable that the said particle removal means is provided in the part to which the ion beam selected by the analyzing magnet is radiated.

The particle removing means may include a cup-shaped container for storing particles and an attachment member, and the particle removing means further includes a particle guide for guiding particles to the storage container. Do. In addition, the means for removing particles is preferably separated from the tube.

The particle removing means may be installed at the bottom of the tube.

Hereinafter, exemplary embodiments to which the present invention is specifically applied will be described in detail with reference to the accompanying drawings. However, the invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments introduced herein are provided by way of example so that the technical spirit of the present invention can be thoroughly and completely disclosed, and to fully convey the spirit of the present invention to those skilled in the art. In the drawings, each component is shown briefly to the extent necessary for the understanding of the present invention. Like numbers refer to like elements throughout the specification.

Figure 3 schematically shows the configuration of the ion implantation device having a particle removal means according to the present invention, Figure 4 is a cross-sectional view of an embodiment of the particle removal means provided in the ion implantation device of FIG. Is shown.

3 and 4, one embodiment of the ion implantation apparatus according to the present invention has the same basic configuration as a conventional ion implantation apparatus. That is, the ion implantation apparatus includes an ion beam generating unit 310, an ion analyzing unit 320, an acceleration unit 130, a process chamber unit 340, and the like as in the related art. The ion implantation device may be a high current ion implantation device, a medium current ion implantation device, a high energy ion implantation device, or a low energy ion implantation device.

The difference between the conventional ion implantation apparatus and the present invention is that the particle removing means 325 is further installed in the ion implantation apparatus. The figure shows the case where one particle removal means 325 is provided in the part which the ion analyzing unit 320 is connected to the acceleration unit 330. As shown in FIG. However, unlike the drawing, the particle removing means may be installed anywhere where a lot of particles are generated and deposited, and a plurality of particle removing means may be installed.

For example, the particle removing means may be installed at the portion where the acceleration unit 330 is connected to the ion analyzing unit 320 as well as the portion shown in the figure, or may be installed at both places. In addition, the particle removing means may be installed where a lot of particles are generated in the ion beam generating unit 310.

As described above, since a large number of particles are generated in the ion beam generating unit 310 and the ion analyzing unit 320 in the ion implantation device, at least one end of the ion analyzing unit 320 (or the tube 322) is placed at the end. It is desirable to install. In addition, the particle removing means 325 is preferably installed on the bottom of the ion analyzing unit 325 or the bottom of the tube 322. When installed on the bottom, moving particles can fall to the particle removal means that are open by gravity.

The particle removing means 325 may be any type of device as long as the device can easily remove particles. For example, as shown in FIG. 4, the particle removing means 325 may be composed of a storage container 325a and an attachment member 325b. The storage container 325a is a container for temporarily storing moving particles, and the attachment member 325b is a means for attaching the storage container 325a to the tube 322.

The shape and size of the storage container 325a may be various. It is desirable to determine the size to an appropriate size in consideration of the space of the entire installation and the amount of particles. In addition, the planar shape of the storage container may also be circular, square or other shapes.

The attachment member 325b may be a means that may permanently fix the storage container to the tube 322 or the like, or may be made of a detachable means. For example, the attachment member may include a screw. In this case, the storage container 325a may be easily separated and assembled to the tube 322. If the separation and assembly is easy, there is an advantage that the maintenance and repair of the facility can be checked from time to time.

The particle removing means 325 may further include a particle guide 325c in addition to the storage container 325a and the attachment member 325b. The particle guide 325c is a means for guiding the moving particle to the storage container 325c to prevent it from moving to another unit. To this end, as shown in FIG. 4, the particle guide 325c is preferably installed diagonally in the flow of air formed at the end of the storage container 325a during the maintenance and repair of the ion beam or the facility.

If such particle removing means 325 is provided, heavy particles among the particles generated during the process are automatically dropped into the storage container 325a by gravity during movement and stored. In addition, the non-heavy particles can be dropped into the container for the author 325a by the particle guide 325c.

As described above, according to the present invention, it is possible to prevent particles generated by the ion beam from moving along the process chamber and / or the tube. Therefore, it is possible to prevent the particles from moving to the power supply or the controller installed in the acceleration unit to prevent damage and malfunction of the equipment. In addition, it is possible to prevent insulation defects that may appear due to the accumulation of particles in the buoys.

In addition, it is possible to prevent particles from moving to the process chamber unit in which the wafer is loaded, thereby preventing the semiconductor device from being degraded by wafer contamination and increasing the yield.

In addition, since the movement of the particles can be prevented and the particles can be easily removed, the maintenance and cleaning of the equipment can be easily performed.

Claims (12)

Ion beam generating unit; An ion analyzing unit for selecting a specific ion among the ions provided from the ion beam generating unit; An acceleration unit for accelerating ions selected and radiated from the ion analyzing unit; And An ion implantation apparatus having a process chamber unit in which ions accelerated by the acceleration unit are implanted into a semiconductor substrate, wherein the ion analyzer is provided with means for removing particles. The ion implantation apparatus according to claim 1, wherein the particle removing means is provided at a position connected with the acceleration unit of the ion analyzing unit. The ion implantation apparatus according to claim 1 or 2, wherein the particle removing means comprises a cup-shaped container for storing particles and an attachment member. 4. The ion implantation apparatus of claim 3, wherein the particle removing means further comprises a particle guide for guiding particles to the storage container. The ion implantation apparatus of claim 3, wherein the particle removing means is separated from the ionizing unit. The ion implantation apparatus according to claim 3, wherein the particle removing means is provided on a bottom surface of the ion analyzing unit. An ion implantation apparatus having an ionizing unit in which an analyzing magnet is provided in a tube through which an ion beam passes, the ion implantation apparatus further comprising means for removing particles from the tube. 8. The ion implantation apparatus according to claim 7, wherein the particle removing means is provided at a portion where the selected ion beam is radiated from the analyzing magnet. The ion implantation apparatus according to claim 7 or 8, wherein the particle removing means comprises a cup-shaped container for storing particles and an attachment member. 10. The ion implantation apparatus of claim 9, wherein the particle removing means further comprises a particle guide for guiding particles to the storage container. The ion implantation apparatus of claim 10, wherein the particle removing means is detachable from the tube. The ion implantation apparatus according to claim 9, wherein the particle removing means is provided on a bottom surface of the tube.