KR20040015655A - Method of making organic electroluminescent display - Google Patents

Abstract

PURPOSE: A method for manufacturing an organic electroluminescent device is provided to reduce the complexity of a manufacturing process by simultaneously patterning a transparent electrode layer used as a positive electrode and a metal layer for reducing a resistance of the transparent electrode layer. CONSTITUTION: A transparent substrate(21) having a pixel region and a pad region is provided. A transparent electrode layer is formed on the transparent substrate(21) and a metal layer is formed on the transparent electrode layer. A plurality of strip-shaped transparent electrode layer patterns(26) is formed and metal layer patterns(27) are formed on the transparent electrode layer patterns(26) by patterning the transparent electrode layer and the metal layer. A lattice-shaped insulation layer pattern(29) is formed on the transparent substrate(21). A plurality of sidewalls(30) is formed on the insulation layer pattern(29). An organic luminescent layer is formed on the transparent electrode layer patterns(26). A negative electrode layer is formed on the organic luminescent layer.

Description

Manufacturing method of organic electroluminescent display device {Method of making organic electroluminescent display}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an organic electroluminescent display, and in particular, by simultaneously patterning a transparent electrode layer used as a positive electrode layer and a metal layer for reducing the resistance of the transparent electrode layer, an organic material that can simplify the manufacturing process and reduce manufacturing costs The manufacturing method of an electroluminescent display element is related.

In general, an organic light emitting display device is one of flat panel display devices, and is formed between an anode layer and a cathode layer on a substrate through an organic light emitting layer, and may be formed in a very thin and matrix form. The organic electroluminescent display is an emissive display and is another emissive display, which is driven at a low voltage of 15V or less unlike a plasma display panel (PDP) that requires a high driving voltage of 200V or more. It is possible to be portable and suitable, and has high brightness and wide viewing angle and excellent response characteristics such as short response speed of about 1 μm compared to TFT-LCD which is a non-emissive display. In particular, due to the fast response speed of organic EL devices superior to other flat panel display devices, it is a very suitable device for mobile phones for IMT-2000 where video is essential.

Such an organic light emitting display device includes a stripe positive electrode layer on a transparent substrate, an insulating layer pattern having a lattice-shaped opening on the positive electrode layer, a partition on the insulating layer pattern, an organic light emitting layer on the positive electrode layer, and a negative electrode layer on the organic light emitting layer. Is done. The positive electrode layer is usually formed of a transparent electrode layer, for example, an indium tin oxide (ITO) layer, but a chromium layer may be further formed on the ITO layer to lower the resistance of the positive electrode layer.

In the conventional method of forming the positive electrode layer of the organic light emitting display device, the ITO layer is laminated on the transparent substrate using a sputtering method and patterned by using a photolithography technique, and then a chromium layer is formed on the ITO layer and again the photolithography The technique is to pattern the chromium layer.

In other words, two photolithography techniques are used to form the positive electrode layer. As a result, the manufacturing process is complicated and manufacturing costs are increased.

Hereinafter, a method of manufacturing an organic light emitting display device according to the related art will be described in detail with reference to the accompanying drawings.

1 is a plan view of an organic light emitting display device of the prior art.

As shown in FIG. 1A, the transparent substrate 1 is divided into a pixel region and a pad region, and a plurality of indium tin oxide (ITO) layer patterns 2 are arranged in a stripe type on the transparent substrate 1. do. And a chromium layer pattern 3 for reducing the contact resistance of the ITO layer is laminated on the plurality of ITO layer patterns 2 in the pad region. The plurality of ITO layer patterns 2 and the plurality of chromium layer patterns 3 are used as positive electrode layers of the organic electroluminescent display element.

The lattice-shaped insulating layer pattern 5 orthogonally interposed between the plurality of ITO layer patterns 2 and the plurality of ITO layer patterns 2 includes the plurality of ITO layer patterns 2 and the transparent substrate 1 except for the pad region. Stacked on. In the insulating layer pattern 5, the plurality of pixel portions 7 are opened in a dot form.

Further, a plurality of partitions 6 are formed on the insulating layer pattern 5 between the pixel portions 7 orthogonal to the plurality of ITO layer patterns 2. The organic light emitting layer and the negative electrode layer which are stacked on the plurality of ITO layer patterns 2 including the plurality of pixel portions 7 and the insulating layer pattern 5 are not shown.

2 is a plan view of another organic light emitting display device according to the related art.

Forming a chromium layer pattern 3 on each ITO layer pattern 2 not only reduces the contact resistance of the positive electrode layer in the pad region, but also the line resistance of the positive electrode layer in the pixel region. The chromium layer pixel pattern 4 is formed on each ITO layer pattern 2 in the pixel region in order to reduce the number of pixels. The chromium layer pixel pattern 4 is parallel to the plurality of ITO layer patterns 2 and is formed adjacent to the ends of the plurality of ITO layer patterns 2 without overlapping with the pixel portion 7. The plurality of ITO layer patterns 2, the plurality of pad chromium layers 3, and the plurality of chromium layer pixel patterns 4 are used as positive electrode layers of the organic light emitting display device.

FIG. 3 is a cross-sectional view of a method of manufacturing an organic light emitting display device according to the related art, taken along the line AA ′ of FIG. 1.

As shown in FIG. 3A, an indium tin oxide (ITO) layer (not shown) is laminated on the transparent substrate 1 to a constant thickness by using a sputtering method. A first photoresist film (not shown) is applied on the ITO layer, exposed using an exposure mask, and then developed to develop a stripe-type first photoresist pattern (not shown in the drawings). ). When the ITO layer is etched using the first photoresist pattern as an etch mask and the first photoresist pattern is removed, a stripe-shaped ITO layer pattern 2 is formed.

As shown in Fig. 3B), a chromium layer (not shown) is laminated on the ITO (indium tin oxide) layer pattern 2 to a constant thickness by using a sputtering method. A second photoresist pattern (not shown in the figure) is coated on the chromium layer to expose a chromium layer in the pixel region by applying a second photoresist film (not shown in the figure), exposing with an exposure mask and then developing. Not formed). When the chromium layer is etched using the second photoresist pattern as an etching mask and the second photoresist pattern is removed, the chromium layer pattern 3 is formed on the ITO layer pattern 2 in the pad region. The reason for forming the chromium layer pattern 3 on the ITO layer pattern 2 is to lower the resistance of the positive electrode layer by using a chromium layer having a low resistance and a specific resistance on the ITO layer having a high resistance and a specific resistance.

Then, an insulating layer (not shown) that can be electrically insulated on the transparent substrate 1 including the ITO layer pattern 2 is laminated. Organic or inorganic materials can be used as the insulating layer. As the organic material, a resin and a photosensitive film including acrylic, novolac, epoxy, etc. are used. As the inorganic material, silicon oxide, silicon nitride, and silicon are used. An oxynitride film (silicon oxinitride) is used. The insulating layer is patterned so that the lattice-shaped insulating layer pattern 5 between the ITO layer pattern 2 and the orthogonal to the ITO layer pattern 2 has the ITO layer pattern 2 and the transparent substrate 1 except for the pad region. It is laminated on).

As shown in FIG. 3C, a negative type organic photoresist film (not shown) is laminated on the insulating layer pattern 5 and patterned to form a partition wall 6 having a reverse slope. To form. At this time, the insulating layer pattern 5 is arranged on the insulating layer pattern 5 between the pixel portions 7 orthogonal to the ITO layer pattern 2, and the overhang (overhanging) of the negative electrode layer 9 is not shorted to the adjacent components. A partition 6 having an overhang structure is formed.

Then, the organic light emitting layer 8 and the negative electrode layer 9 are sequentially stacked using a shadow mask (not shown in the figure).

Thereafter, an encapsulation layer made of metal or glass or the like to protect the organic light emitting layer 8 and the negative electrode layer 9 which are vulnerable to moisture, oxygen, etc. on the entire surface including the negative electrode layer 9, or A passivation layer made of inorganic and organic materials is provided to block the organic EL device from the outside.

4 is a cross-sectional view illustrating a method of manufacturing the organic light emitting display device of the related art, taken along the line BB ′ in FIG. 1.

The cross-sectional view which cut | disconnected the pad area | region of the organic electroluminescent display element was shown by the 1st photosensitive film pattern on the ITO layer pattern 2 which is not shown in FIG. 3, and the 2nd photosensitive film pattern on the chromium layer pattern 3. As shown in FIG.

As shown in FIG. 4A, an ITO layer 13 is formed on the transparent substrate 1. Then, a first photosensitive film (not shown) is laminated on the ITO layer 13, exposed to light, and developed to form the first photosensitive film pattern 10.

As shown in FIG. 4B, the ITO layer 13 is patterned by using the first photoresist pattern 10 as an etching mask to form the ITO layer pattern 2, and the transparent substrate 1 including the ITO layer pattern 2. The chromium layer 12 is formed on it.

As shown in FIG. 4C, a second photoresist film (not shown) is laminated on the chromium layer 12, exposed, and developed to form the second photoresist film pattern 11.

As shown in FIG. 4D, the chromium layer 12 is patterned by using the second photoresist layer pattern 11 as an etching mask to form the chromium layer pattern 3.

FIG. 5 is a cross-sectional view of the organic electroluminescent display device of another conventional art, taken along the line AA ′ of FIG. 2.

As shown in FIG. 5A, an indium tin oxide (ITO) layer (not shown) is laminated on the transparent substrate 1 to a predetermined thickness by using a sputtering method. A first photoresist film (not shown) is applied on the ITO layer, exposed using an exposure mask, and then developed to develop a stripe-type first photoresist pattern (not shown in the drawings). ). When the ITO layer is etched using the first photoresist pattern as an etch mask and the first photoresist pattern is removed, a stripe-shaped ITO layer pattern 2 is formed.

As shown in Fig. 5B), a chromium layer (not shown) is laminated on the indium tin oxide (ITO) layer pattern 2 to a constant thickness by using a sputtering method. A second photoresist pattern (not shown in the figure) is coated on the chromium layer to expose a chromium layer in the pixel region by applying a second photoresist film (not shown in the figure), exposing with an exposure mask and then developing. Not formed). At this time, the second photoresist pattern is formed on the ITO layer pattern 2 in the pad region and on the ITO layer pattern 2 in parallel with the ITO layer pattern 2 and near the end of the ITO layer pattern 2.

When the chromium layer is etched using the second photoresist pattern as an etching mask and the second photoresist pattern is removed, the chromium layer pixel pattern 4 is formed at an end portion on the ITO layer pattern 2 in the pixel region.

As shown in Fig. 5C, an electrically insulating insulating layer (not shown) on the transparent substrate 1 including the ITO layer pattern 2 is laminated. Organic or inorganic materials can be used as the insulating layer. As the organic material, a resin and a photosensitive film including acrylic, novolac, epoxy, etc. are used. As the inorganic material, silicon oxide, silicon nitride, and silicon are used. An oxynitride film (silicon oxinitride) is used. The insulating layer is patterned so that the lattice-shaped insulating layer pattern 5 between the ITO layer pattern 2 and the orthogonal to the ITO layer pattern 2 has the ITO layer pattern 2 and the transparent substrate 1 except for the pad region. It is laminated on).

A negative type organic photoresist film (not shown) is laminated on the insulating layer pattern 5 and patterned to form a partition wall (not shown) having a reverse slope. Form. At this time, the plurality of ITO layer patterns 2 are arranged at regular intervals on the insulating layer patterns 5 between the pixel portions 7 that are orthogonal to each other, and a negative electrode layer (not shown) is disposed between adjacent components. A partition wall having an overhang structure is formed to prevent a short circuit.

In addition, an organic light emitting layer (not shown) and a negative electrode layer are sequentially stacked using a shadow mask (not shown).

Thereafter, an encapsulation layer made of metal or glass or a passivation layer made of inorganic or organic material to protect the organic light emitting layer and the negative electrode layer vulnerable to moisture and oxygen on the front surface including the negative electrode layer, or the like. layer) to block the organic electroluminescent device from the outside.

The manufacturing method of the organic electroluminescent display device of the prior art has the following problems.

In the case of further forming a chromium layer on the ITO layer in order to lower the contact resistance and the line resistance of the ITO layer used as the positive electrode layer, conventionally using a sputtering method on a transparent substrate by laminating the ITO layer to a constant thickness and photolithography technology After patterning by using, to form a chromium layer on the ITO layer and again patterning the chromium layer using a photolithography technique, two photolithography techniques are used to form a positive electrode layer. Therefore, there is a problem that the manufacturing process is complicated and the manufacturing cost rises.

The present invention is to solve the above problems of the conventional method of manufacturing an organic light emitting display device and to simplify the manufacturing process by simultaneously patterning a transparent electrode layer used as a positive electrode layer and a metal layer which reduces the resistance of the transparent electrode layer. It is an object of the present invention to provide a method for manufacturing an organic light emitting display device which can reduce cost.

1 is a plan view of an organic light emitting display device of the prior art.

2 is a plan view of yet another conventional organic electroluminescent display device.

3 is a cross-sectional view of a method of manufacturing the organic light emitting display device of the related art, taken along the line AA ′ of FIG. 1.

4 is a cross-sectional view of a method of manufacturing an organic light emitting display device according to the related art, taken along line B-B 'of FIG.

5 is a cross-sectional view of a method of manufacturing another organic light emitting display device according to the related art, taken along line AA ′ of FIG. 2.

6 is a plan view of an organic light emitting display device according to a first exemplary embodiment of the present invention.

7 is a plan view of an organic light emitting display device according to a second exemplary embodiment of the present invention.

8 is a cross-sectional view of a method of manufacturing an organic light emitting display device according to a first exemplary embodiment of the present invention, taken along line AA ′ of FIG. 6.

9 is a cross-sectional view of a method of manufacturing an organic light emitting display device according to a first exemplary embodiment of the present invention, taken along the line B-B 'of FIG.

10 is a cross-sectional view of a method of manufacturing an organic light emitting display device according to a second exemplary embodiment of the present invention, taken along line AA ′ of FIG. 7.

Explanation of symbols for the main parts of the drawings

21 transparent substrate 22 transparent electrode layer

23 metal layer 24 normal photosensitive film pattern

25: halftone photosensitive film pattern 26: transparent electrode layer pattern

27: metal layer pad pattern 28: metal layer pixel pattern

29 insulating film pattern 30 partition wall

31 pixel portion 32 organic light emitting layer

33: cathode layer

This object is achieved by the following configuration.

(1) A method of manufacturing an organic light emitting display device according to the present invention comprises the steps of preparing a transparent substrate having a pixel region and a pad region; Forming a transparent electrode layer on the transparent substrate and a metal layer on the transparent electrode layer; Patterning the transparent electrode layer and the metal layer to form a metal layer pattern on each of the plurality of stripe-shaped transparent electrode layer patterns and the transparent electrode layer patterns of the pad region; Forming a lattice-shaped insulating layer pattern on the transparent substrate including the plurality of transparent electrode layer patterns, and forming a plurality of partitions on the insulating layer pattern orthogonal to the plurality of transparent electrode layer patterns; Forming an organic light emitting layer on the plurality of transparent electrode layer patterns, and forming a negative electrode layer on the organic light emitting layer.

(2) In the method of manufacturing an organic electroluminescent display device as in (1), the transparent electrode layer is made of indium tin oxide (ITO) or indium zinc oxide (IZO), and the metal layer is made of chromium (Cr) or molybdenum. (Mo), molybdenum tungsten alloy (MoW), molybdenum / aluminum / molybdenum (Mo / Al / Mo), molybdenum / aluminum neodynium alloy / molybdenum (Mo / AlNd / Ho), molybdenum / aluminum (Mo / Al), aluminum Molybdenum (Al / Mo), aluminum (Al), aluminum neodynium alloy (AlNd), molybdenum / aluminum neodynium alloy (Mo / AlNd), and aluminum neodynium alloy / molybdenum (AlNd / Mo) It is characterized by using.

(3) The method of manufacturing an organic electroluminescent display device as described in (1), wherein the transparent electrode layer is formed to a thickness of about 1,500 to 2,000 GPa, and the metal layer is about 1000 to 3000 GPa, and the sheet resistance of the transparent electrode layer pattern (sheet resistance) is characterized in that less than 10 Ω / □.

(4) The method of manufacturing an organic electroluminescent display device as in (1), wherein the forming of the transparent electrode layer pattern and the metal layer pattern comprises: applying a photosensitive film on the metal layer pattern; Exposing the photoresist film using an exposure mask in which the pixel region is halftone and the pad region is normal tone, and then developing the photoresist to form a halftone photoresist pattern in the pixel region and a normal tone photoresist pattern in the pad region; Etching the metal layer and the transparent electrode layer sequentially using the halftone photoresist pattern and the normal tone photoresist pattern; Performing the ashing process to remove the photoresist pattern of the halftone, and removing a portion of the upper layer of the photoresist pattern of the normal tone; And etching the metal layer using the normal photosensitive film pattern as a mask to form a metal layer pad pattern.

(5) The method of manufacturing an organic electroluminescent display device as in (1), wherein the forming of the transparent electrode layer pattern and the metal layer pattern comprises applying a photosensitive film on the metal layer pattern; Exposing the photoresist film using an exposure mask in which the pixel region is halftone and the pad region is normal tone, and then developing the photoresist to form a halftone photoresist pattern in the pixel region and a normal tone photoresist pattern in the pad region; Dry etching the metal layer using the halftone photosensitive film pattern and the normal tone photosensitive film pattern as a mask, and removing the halftone photosensitive film pattern by ashing and removing a portion of the upper layer of the normal tone photosensitive film pattern ; Etching the transparent electrode layer using the exposed metal layer and the normal photosensitive film pattern as a mask; And etching the metal layer using the normal photosensitive film pattern as a mask to form the metal layer pad pattern.

(6) In the method of manufacturing an organic electroluminescent display device as in (4) or (5), the halftone pattern of the photosensitive film is adjusted to have a lower thickness than the normal tone by adjusting the amount of light passing through the halftone region of the exposure mask. Characterized in that.

(7) In the method of manufacturing an organic electroluminescent display device as described in (4) or (5), the halftone region of the mask used to form the halftone pattern includes slit shape, lattice shape, and valley ( It is characterized by using one of the shape (chevron).

(8) In the method of manufacturing an organic electroluminescent device as described in (4) or (5), the halftone region of the mask used to form the halftone pattern is formed of a semi-transmissive material having a low transmittance. Characterized in that.

(9) The method of manufacturing an organic electroluminescent display device as described in (4) or (5) above, wherein the photosensitive film pattern of the normal tone is about 1.5 to 2.5 µm, and the photosensitive film pattern of the halftone is normal tone thickness. It is characterized by being about 1/2 or less.

(10) In the method for producing an organic electroluminescent display device as described in (4) or (5) above, when the metal layer is used as a chromium layer, it is wetted with (NH 4) 2 Ce (NO 3) 6 + aqueous nitric acid (NO 3) solution. Etching, when used as a molybdenum tungsten (MoW) layer is characterized by using dry etching using gases of SF6 / O2 / He.

(11) In the method of manufacturing an organic electroluminescent display device as described in (4) or (5), when the transparent electrode layer is used as an ITO layer, wet etching is performed using an aqueous solution of hydrochloric acid (HCl) + nitric acid (HNO 3). Characterized in that.

(12) A method of manufacturing an organic light emitting display device according to the present invention comprises the steps of preparing a transparent substrate having a pixel region and a pad region; Forming a transparent electrode layer on the transparent substrate and a metal layer on the transparent electrode layer; The transparent electrode layer and the metal layer are patterned to form a plurality of stripe-shaped transparent electrode layer patterns, a metal layer pixel pattern on each of the transparent electrode layer patterns of the pixel region, and a metal layer pad pattern on each of the transparent electrode layer patterns of the pad region. Forming a; Forming a lattice-shaped insulating layer pattern on the transparent substrate including the plurality of transparent electrode layer patterns; Forming a plurality of partitions on the insulating layer pattern orthogonal to the plurality of transparent electrode layer patterns; Forming an organic emission layer on the plurality of transparent electrode layer patterns; And forming a negative electrode layer on the organic light emitting layer.

(13) The method of manufacturing an organic electroluminescent display device as in (12), wherein the forming of the transparent electrode layer pattern and the metal layer pattern comprises: applying a photosensitive film on the metal layer pattern; The photoresist is exposed after exposure using an exposure mask in which pixel areas are halftones and normal tones, and pad areas are normal tones. Then, the photoresist pattern of halftones, the photoresist pattern of the first normal tone, and the second normals of the pad area are developed. Forming a tone photosensitive film pattern; Etching the metal layer and the transparent electrode layer sequentially using the halftone photoresist pattern, the first normal tone photoresist pattern, and the second normal tone photoresist pattern as a mask; Performing the ashing process to remove the halftone photoresist pattern, and removing a portion of the upper layer portion of the photoresist pattern of the first normal tone and the photoresist pattern of the second normal tone; And etching the metal layer using the photoresist pattern of the first normal tone and the photoresist pattern of the second normal tone as a mask to form a metal layer pixel pattern and a pad pattern.

(14) The method of manufacturing an organic electroluminescent display device as in (12), wherein forming the transparent electrode layer pattern and the metal layer pattern comprises applying a photosensitive film on the metal layer pattern; The photoresist is exposed after exposure using an exposure mask in which pixel areas are halftones and normal tones, and pad areas are normal tones. Then, the photoresist pattern of halftones, the photoresist pattern of the first normal tone, and the second normals of the pad area are developed. Forming a tone photosensitive film pattern; The metal layer is dry-etched using the halftone photosensitive film pattern, the first normal tone photosensitive film pattern, and the second normal tone photosensitive film pattern as a mask to remove the halftone photosensitive film pattern by ashing and removing the first layer. Removing a portion of the upper layer of the photoresist pattern of the normal tone and the photoresist pattern of the second normal tone; Etching the transparent electrode layer using the exposed metal layer and the normal photosensitive film pattern as a mask; And etching the metal layer using the photoresist pattern of the first normal tone and the photoresist pattern of the second normal tone as a mask to form the metal layer pixel pattern and the pad pattern.

(15) In the method of manufacturing an organic electroluminescent display device as described in (13) or (14), the halftone pattern of the photosensitive film has a thickness lower than that of normal tones by adjusting the amount of light passing through the halftone region of the exposure mask. It is characterized by having.

(16) In the manufacturing method of the organic electroluminescent element as described in said (13) or (14), the halftone area | region of the mask used for forming the said halftone pattern is a slit shape, a lattice shape, and a chevron. It is characterized by using one of the shapes selected.

(17) The method for manufacturing an organic electroluminescent element as described in (13) or (14), wherein the halftone region of the mask used to form the halftone pattern is formed of a semi-transmissive material having a low transmittance. It is characterized by.

(18) The method for manufacturing an organic electroluminescent display device as described in (13) or (14) above, wherein the photosensitive film pattern of the first normal tone and the photosensitive film pattern of the second normal tone are about 1.5 to 2.5 μm. The halftone photosensitive film pattern is characterized in that about half of the thickness of the normal tone.

(19) In the method for producing an organic electroluminescent display device as described in (13) or (14) above, when the metal layer is used as a chromium layer, it is wetted with an aqueous solution of (NH 4) 2 Ce (NO 3) 6 + nitric acid (NO 3). Etching, when used as a molybdenum tungsten (MoW) layer is characterized by dry etching using gases of SF6 / O2 / He.

(20) In the method of manufacturing an organic electroluminescent display device as described in (13) or (14), when the transparent electrode layer is used as an ITO layer, wet etching is performed using an aqueous solution of hydrochloric acid (HCl) + nitric acid (HNO 3). Characterized in that.

(21) A method of manufacturing an organic light emitting display device according to the present invention comprises the steps of preparing a transparent substrate having a pixel region and a pad region; Forming a transparent electrode layer on the transparent substrate and a metal layer on the transparent electrode layer; Patterning the transparent electrode layer and the metal layer to form a metal layer pattern on each of the plurality of stripe-shaped transparent electrode layer patterns and the transparent electrode layer patterns of the pad region; Forming an organic emission layer on the plurality of transparent electrode layer patterns; And forming a negative electrode layer on the organic light emitting layer.

(22) A method of manufacturing an organic electroluminescent display device as described in (21), wherein forming a lattice-shaped insulating layer pattern on the transparent substrate including the plurality of transparent electrode layer patterns and the plurality of transparent electrode layers The method may further include forming a plurality of partition walls on the insulating layer pattern orthogonal to the pattern.

(23) A method of manufacturing an organic light emitting display device according to the present invention includes the steps of preparing a transparent substrate having a pixel region and a pad region; Forming a transparent electrode layer on the transparent substrate and a metal layer on the transparent electrode layer; The transparent electrode layer and the metal layer are patterned to form a plurality of stripe-shaped transparent electrode layer patterns, a metal layer pixel pattern on each of the transparent electrode layer patterns of the pixel region, and a metal layer pad pattern on each of the transparent electrode layer patterns of the pad region. Forming a; Forming an organic emission layer on the plurality of transparent electrode layer patterns; And forming a negative electrode layer on the organic light emitting layer.

(24) A method of manufacturing an organic electroluminescent display device as in (23), wherein the steps of forming a lattice-shaped insulating layer pattern on the transparent substrate including the plurality of transparent electrode layer patterns and the plurality of transparent electrode layers The method may further include forming a plurality of partition walls on the insulating layer pattern that is perpendicular to the pattern.

Forming a lattice-shaped insulating layer pattern on the transparent substrate including the plurality of transparent electrode layer patterns; Forming a plurality of partitions on the insulating layer pattern orthogonal to the plurality of transparent electrode layer patterns;

Hereinafter, a method of manufacturing an organic light emitting display device according to a first embodiment of the present invention will be described in detail with reference to the accompanying drawings.

6 is a plan view of an organic EL device according to a first embodiment of the present invention.

As shown in FIG. 6A, a transparent electrode layer 22 is stacked on a transparent substrate 21 divided into a pixel region and a pad region, and a metal layer 23 is formed on the transparent electrode layer 22. In order to form a stripe type positive electrode layer, a photosensitive film (not shown) is stacked on the metal layer 23, and the photosensitive film is formed using an exposure mask in which the pixel area is halftone and the pad area is normal tone. After exposing the light to the chromium layer 23 in the pad region, the photoresist pattern 24 of normal tone and the metal layer 23 of the pixel region have a halftone photoresist pattern 25. Form.

At this time, the halftone area of the mask used to form the halftone pattern is selected from a slit shape, a lattice shape, and a chevron shape, or a pattern is formed of a semi-transmissive material having a low transmittance to transmit the mask. By controlling the amount of light in the region to have a lower thickness than the normal tone. Here, the halftone photosensitive film pattern 25 has a thickness lower than that of the normal tone photosensitive film pattern 24.

Here, the transparent electrode layer 22 uses indium tin oxide (ITO) or indium zinc oxide (IZO), and the metal layer 23 includes chromium (Cr), molybdenum (Mo), molybdenum tungsten alloy (MoW), molybdenum / aluminum / Molybdenum (Mo / Al / Mo), Molybdenum / Aluminum Neodymium Alloy / Molybdenum (Ho / AlNd / Mo), Molybdenum / Aluminum (Mo / Al), Aluminum / Molybdenum (Al / Mo), Aluminum (Al), Aluminum Neo One of dinium alloy (AlNd), molybdenum / aluminum neodynium alloy (Mo / AlNd), and aluminum neodynium alloy / molybdenum (AlNd / Mo) is used.

As shown in FIG. 6B, the transparent electrode layer 22 and the metal layer 23 are etched using the photoresist pattern 24 having a normal tone and the photoresist pattern 25 having a half tone as a mask. A stripe-shaped transparent electrode layer pattern 26 and a metal layer pad pattern 27 are formed.

In the pad region where the normal photosensitive film pattern 24 is used as an etching mask, the transparent electrode layer pattern 26 and the metal layer pad pattern 27 are formed, and in the pixel area where the halftone photosensitive film pattern 25 is used as an etching mask. A stripe-shaped transparent electrode layer pattern 26 is formed.

When the halftone photosensitive film pattern 25 and the normal tone photosensitive film pattern 24 are etched, the metal layer 23 and the transparent electrode layer 22 of the portion where the photosensitive film pattern is not formed are etched. The metal layer 23 and the transparent electrode layer 22 of the portion where the photoresist pattern is not formed are sequentially etched using the photoresist pattern 24 of normal tone as a mask. Subsequently, the halftone photosensitive film pattern 25 and the normal tone photosensitive film pattern 24 are ashed to remove the halftone photosensitive film pattern 25, and the upper layer portion of the normal tone photosensitive film pattern 24 is removed. Remove some. The metal layer 23 remaining by using the remaining normal tone photosensitive film pattern 24 as a mask is etched to form the metal layer pad pattern 27 in the pad region.

When dry etching the metal layer 23 in the portion where the photoresist pattern is not formed by using the halftone photoresist pattern 25 and the normal tone photoresist pattern 24 as a mask, the halftone photoresist pattern 25 is also removed. As a result, the base metal layer 23 is exposed. The transparent electrode layer 22 is etched using the exposed metal layer 23 and the normal tone photosensitive film pattern 25 as a mask to form a transparent electrode layer pattern 26. Subsequently, the metal layer 23 is etched using the remaining normal tone photosensitive film pattern 24 as a mask to form the metal layer pad pattern 27 in the pad region.

The halftone photosensitive film pattern 25 has a thickness lower than that of the normal tone photosensitive film pattern 24 in order to simultaneously form the transparent electrode layer pattern 26 and the metal layer pad pattern 27 in one photolithography process.

A lattice-shaped insulating layer pattern 29 orthogonal to the transparent electrode layer pattern 26 and the transparent electrode layer pattern 26 is laminated on the transparent electrode layer pattern 26 and the transparent substrate 21 except for the pad region. In the insulating layer pattern 29, the pixel portion 31 is opened in a dot shape.

In addition, the partition wall 30 is formed on the insulating layer pattern 29 between each pixel portion 31 orthogonal to the transparent electrode layer pattern 26. The organic light emitting layer and the negative electrode layer stacked on the transparent electrode layer pattern 26 including the plurality of pixel units 31 and the insulating layer pattern 29 are not illustrated.

7 is a plan view of an organic light emitting display device according to a second exemplary embodiment of the present invention.

The metal layer pad pattern 27 is formed on the transparent electrode layer pattern 26 to not only reduce the contact resistance of the pad region, but also to reduce the line resistance of the transparent electrode layer pattern 26 of the pixel region. The metal layer pixel pattern 28 is formed on the pattern 26. The metal layer pixel pattern 28 is parallel to the transparent electrode layer pattern 26 and is formed adjacent to the end of the transparent electrode layer pattern 26 without overlapping the pixel portion 31. The plurality of transparent electrode layer patterns 26, the plurality of metal layer pad patterns 27, and the plurality of metal layer pixel patterns 28 are used as positive electrode layers of the organic light emitting display device.

8 is a cross-sectional view illustrating a method of manufacturing an organic light emitting display device according to a first exemplary embodiment of the present invention, taken along the line AA ′ of FIG. 6.

As shown in FIG. 8A, the transparent electrode layer 22 is laminated on the transparent substrate 21, and the metal layer 23 having lower resistance and specific resistance than the transparent electrode layer 22 is formed on the transparent electrode layer 22.

The transparent electrode layer 22 is laminated with a constant thickness of indium tin oxide (ITO) or indium zinc oxide (IZO) using a vacuum deposition method such as sputtering or chemical vapor deposition. The metal layer 23 includes chromium layer (Cr), molybdenum (Mo), molybdenum tungsten alloy (MoW), molybdenum / aluminum / molybdenum (Mo / Al / Mo), and molybdenum / aluminum neodynium alloy / molybdenum (Mo / AlNd) / Mo), molybdenum / aluminum (Mo / Al), aluminum / molybdenum (Al / Mo), aluminum (Al), aluminum neodynium alloy (AlNd), molybdenum / aluminum neodynium alloy (Mo / AlNd), and aluminum neo One of dinium alloy / molybdenum (AlNd / Mo) is selected and used.

The transparent electrode layer 22 is laminated to a thickness of about 1,500 to 2,000 kPa, and the sheet resistance of the positive electrode layer is 10 Ω / □ or less. The metal layer 23 has a thickness of about 1000 to 3000 mm 3.

As shown in FIG. 8B), a photosensitive film (not shown) is applied on the metal layer 23 by about 1.5 to 2.5 μm, and the pixel region is halftone and the pad region is exposed after exposure using an exposure mask of normal tone. The halftone photosensitive film pattern 25 is formed in the pixel area, and the normal tone photosensitive film pattern 24 is formed in the pad area. In this case, the halftone region of the mask used to form the halftone pattern may be one of a slit shape, a lattice shape, and a chevron shape, or a pattern may be formed of a semi-transmissive material having a low transmittance. By controlling the amount of light in the transmission region to have a lower thickness than the normal tone. The formed halftone photosensitive film pattern 25 has a thickness of about 1/2 or less of the normal tone thickness, and the thickness of the normal tone photosensitive film pattern 24 has a thickness of about 1.5 to 2.5 μm, which is a photosensitive film coating thickness.

As shown in FIG. 8C, the metal layer 23 and the transparent electrode layer 22 of the portion where the photoresist pattern is not formed are sequentially etched using the halftone photoresist pattern 25 and the normal tone photoresist pattern 24 as masks. When the metal layer 23 is used as the chromium layer, wet etching is performed with (NH4) 2Ce (NO3) 6 + nitric acid (NO3) aqueous solution, and when used as the molybdenum tungsten (MoW) layer, the gases of SF6 / O2 / He are used. Dry etch. When the transparent electrode layer 22 is used as the ITO layer, wet etching is performed using an aqueous hydrochloric acid (HCl) + nitric acid (HNO 3) solution.

When the halftone photosensitive film pattern 25 and the normal tone photosensitive film pattern 24 are etched, the metal layer 23 and the transparent electrode layer 22 of the portion where the photosensitive film pattern is not formed are etched. The metal layer 23 and the transparent electrode layer 22 of the portion where the photoresist pattern is not formed are sequentially etched using the photoresist pattern 24 of normal tone as a mask. Subsequently, the halftone photosensitive film pattern 25 and the normal tone photosensitive film pattern 24 are ashed to remove the halftone photosensitive film pattern 25, and a part of the upper layer portion of the normal tone photosensitive film pattern 24 is removed. Remove it. The metal layer 23 remaining by using the remaining normal tone photosensitive film pattern 24 as a mask is etched to form the metal layer pad pattern 27 in the pad region.

When dry etching the metal layer 23 of the portion where the photoresist pattern is not formed by using the halftone photoresist pattern 25 and the normal tone photoresist pattern 24 as a mask, the halftone photoresist pattern 25 And dry etching the metal layer 23 in the portion where the photoresist pattern is not formed using the photoresist pattern 24 of normal tone as a mask, the halftone photoresist pattern 25 is ashed and removed, and the photoresist of normal tone A portion of the upper layer portion of the pattern 24 is ashed. The transparent electrode layer 22 is etched using the exposed metal layer 23 and the normal photosensitive film pattern 25 as a mask to form a transparent electrode layer pattern 26. Subsequently, the metal layer 23 remaining by using the remaining normal tone photosensitive film pattern 24 as a mask is etched to form a metal layer pad pattern 27 in the pad region.

The halftone photosensitive film pattern 24 has a thickness lower than that of the normal tone photosensitive film pattern 25 in order to simultaneously form the transparent electrode layer pattern 24 and the metal layer pad pattern 27 in one photolithography process.

As shown in FIG. 8D, an electrically insulating layer (not shown) that can be electrically insulated on the transparent substrate 21 including the transparent electrode layer pattern 26 is laminated. Organic or inorganic materials can be used as the insulating layer. As the organic material, a resin and a photosensitive film including acrylic, novolac, epoxy, etc. are used. As the inorganic material, silicon oxide, silicon nitride, and silicon are used. An oxynitride film (silicon oxinitride) is used. The insulating layer is patterned to form a lattice-shaped insulating layer pattern 29 orthogonal to the transparent electrode layer pattern 26 and the transparent electrode layer pattern 26 on the transparent electrode layer pattern 26 and the transparent substrate 21 except for the pad region. Are stacked.

As shown in FIG. 8E), an organic photoresist film (not shown) of a negative type (not shown) is laminated and patterned with an electrically insulating material on the insulating layer pattern 29 to have a reverse slope 30. To form. At this time, the transparent electrode layer pattern 26 is arranged on the insulating layer pattern 29 between the pixel portions 31 orthogonal to each other at regular intervals, so that the negative electrode layer 33 does not have a short circuit with the adjacent components. A plurality of partitions 30 having an overhang structure are formed.

Then, the organic light emitting layer 32 and the negative electrode layer 33 are sequentially stacked using a shadow mask (not shown).

The organic light emitting layer 32 may be formed of a fluorescent low molecular material such as Alq ₃ or Anthrancene, an iridium complex such as Ir (ppy) 3 and a phosphorescent low molecular material such as a derivative thereof, PPV (poly (phenylenevinylene)), and PT (polythiophene). ) And derivatives thereof such as high molecular weight organic light emitting materials.

Before forming the organic emission layer 32, a hole transport layer may be formed on the hole injection layer and the hole injection layer. In addition, an electron transport layer and an electron injection layer may be formed on the organic emission layer. In the hole injection layer, when a hole injection electrode having a large work function is used, a large amount of holes can be injected and the injected holes must be able to move in the layer. It is a thin film layer having a property of being hard to move. In addition, the electron transport layer is capable of injecting a large amount of electrons when using an electron injection electrode having a low work function, and the injected electrons must be able to move in the layer, and the hole injection is difficult and difficult to move even if the injection is possible. It is a thin film layer having.

Thereafter, an encapsulation layer made of metal, glass, or the like to protect the organic light emitting layer 32 and the negative electrode layer 33 and the like which are vulnerable to moisture and oxygen on the entire surface including the negative electrode layer 33, or A passivation layer made of inorganic and organic materials is provided to block the organic EL device from the outside.

FIG. 9 is a cross-sectional view illustrating a method of manufacturing an organic light emitting display device according to a first exemplary embodiment of the present invention, taken along the line BB ′ of FIG. 6.

FIG. 8 is a cross-sectional view of the pad area of the organic light emitting display device. The etching process of the photoresist pattern, the transparent electrode layer pattern 26 and the metal layer pad pattern 27 on the metal layer 23 (not shown in FIG. 8) is illustrated.

As shown in FIG. 9A, the transparent electrode layer 22 and the metal layer 23 are sequentially formed on the transparent substrate 21.

As shown in Fig. 9B), a photosensitive film (not shown) is applied on the metal layer 23, the pixel area is halftone and the pad area is exposed after exposure using an exposure mask that is normal tones. A photosensitive film pattern (not shown) and a normal tone photosensitive film pattern 24 on the pad area are formed. At this time, the halftone area of the mask used to form the halftone pattern is selected from a slit shape, a lattice shape, and a chevron shape, or a pattern is formed of a semi-transmissive material having a low transmittance to transmit the mask. By controlling the amount of light in the region to have a lower thickness than the normal tone.

As shown in FIG. 9C, the metal layer 23 and the transparent electrode layer 22 are patterned by using the halftone photosensitive film pattern and the normal tone photosensitive film pattern 24 as an etching mask, thereby forming the metal layer pad pattern 27 and the transparent electrode layer pattern. (26) is formed.

FIG. 10 is a cross-sectional view illustrating a method of manufacturing an organic light emitting display device according to a second exemplary embodiment of the present invention, taken along line AA ′ of FIG. 7.

As shown in FIG. 10A, the transparent electrode layer 22 is laminated on the transparent substrate 21, and the metal layer 23 having lower resistance and specific resistance than the transparent electrode layer 22 is formed on the transparent electrode 22. The transparent electrode layer 22 is laminated with a uniform thickness of ITO (iudium tin oxide) or IZO (IZO) using a vacuum deposition method such as sputtering or chemical vapor deposition. The metal layer 23 may include a chromium layer (Cr), molybdenum (Mo), molybdenum tungsten alloy (MoW), molybdenum / aluminum / molybdenum (Mo / Al / Mo), molybdenum / aluminum neodynium alloy / molybdenum (Mo / AlNd / Mo), molybdenum / aluminum (Mo / Al), aluminum / molybdenum (Al / Mo), aluminum (Al), aluminum neodynium alloy (AlNd), molybdenum / aluminum neodynium alloy (Mo / AlNd), and aluminum neodynium One of alloy / molybdenum (AlNd / Mo) is selected and used.

As shown in Fig. 10B), a photosensitive film (not shown) is applied onto the transparent substrate 21, and the pixel areas are exposed using an exposure mask in which halftones and normal tones and pad areas are normal tones. By developing, the halftone photosensitive film pattern 25 and the normal tone photosensitive film pattern 24 are formed on the metal layer 23 of the pixel region. In this case, the halftone region of the mask used to form the halftone pattern may be one of a slit shape, a lattice shape, and a chevron shape, or a pattern may be formed of a semi-transmissive material having a low transmittance to transmit the mask. By controlling the amount of light in the region to have a lower thickness than the normal tone. Therefore, the halftone photosensitive film pattern 25 has a thickness lower than that of the normal tone photosensitive film pattern 24.

As shown in FIG. 10C, the half-tone photosensitive film pattern 25 and the normal tone photosensitive film pattern 24 on the metal layer 23 are used as a mask, and the metal layer 23 and the transparent electrode layer 22 of the portion where the photosensitive film pattern is not formed. ) Is sequentially etched. When the metal layer 23 is used as a chromium layer, wet etching is performed using an aqueous solution of (NH 4) 2 Ce (NO 3) 6 + nitric acid (NO 3), and when the molybdenum tungsten (MoW) layer is used, dry using gases of SF 6 / O 2 / He. Etch it. When the transparent electrode layer 22 is used as the ITO layer, wet etching is performed using an aqueous hydrochloric acid (HCl) + nitric acid (HNO 3) solution.

When the halftone photosensitive film pattern 25 and the normal tone photosensitive film pattern 24 are etched, the metal layer 23 and the transparent electrode layer 22 of the portion where the photosensitive film pattern is not formed are etched. The metal layer 23 and the transparent electrode layer 22 of the portion where the photoresist pattern is not formed are sequentially etched using the photoresist pattern 24 of normal tone as a mask. Subsequently, the halftone photosensitive film pattern 25 and the normal tone photosensitive film pattern 24 are ashed to remove the halftone photosensitive film pattern 25, and the upper layer portion of the normal tone photosensitive film pattern 24 is removed. Remove some. The metal layer 23 remaining by using the remaining normal tone photosensitive film pattern 24 as a mask is etched to form the metal layer pixel pattern 28 in the pixel region.

When dry etching the metal layer 23 of the portion where the photoresist pattern is not formed by using the halftone photoresist pattern 25 and the normal tone photoresist pattern 24 as a mask, the halftone photoresist pattern 25 And dry etching the metal layer 23 in the portion where the photoresist pattern is not formed using the photoresist pattern 24 of normal tone as a mask, the halftone photoresist pattern 25 is ashed and removed, and the photoresist of normal tone A portion of the upper layer portion of the pattern 24 is removed. The transparent electrode layer 22 is etched using the exposed metal layer 23 and the normal tone photosensitive film pattern 24 as a mask to form the transparent electrode layer pattern 26. Subsequently, the metal layer 23 remaining using the remaining normal tone photosensitive film pattern 24 as a mask is etched to form the metal layer pixel pattern 28 in the pixel region.

The halftone photosensitive film pattern 25 has a thickness lower than that of the normal tone photosensitive film pattern 24 in order to simultaneously form the transparent electrode layer pattern 26 and the metal layer pixel pattern 27 in one photolithography process. The metal layer pixel pattern 28 is formed in the pixel area to reduce the line resistance of the transparent electrode layer pattern 26, and the transparent electrode layer pattern 26 does not overlap the pixel portion 31 on the transparent electrode layer pattern 26. It is formed in parallel to and close to the end of the transparent electrode layer pattern 26.

As shown in FIG. 10D, an insulating layer (not shown) that can be electrically insulated is laminated on the transparent substrate 21 including the transparent electrode layer pattern 26. Organic or inorganic materials can be used as the insulating layer. As the organic material, a resin and a photosensitive film including acrylic, novolac, epoxy, etc. are used. As the inorganic material, silicon oxide, silicon nitride, and silicon are used. An oxynitride film (silicon oxinitride) is used. The insulating layer is patterned so that the lattice-shaped insulating layer pattern 29 is formed between the transparent electrode layer pattern 26 and the orthogonal to the transparent electrode layer pattern 26, except for the pad region. It is laminated on).

A negative type organic photoresist film (not shown) is laminated on the insulating layer pattern 29 and patterned to form a partition wall (not shown) having a reverse slope. Form. At this time, the transparent electrode layer pattern 26 is arranged on the insulating layer pattern 29 between each pixel portion 31 orthogonal to each other at regular intervals, and the negative electrode layer (not shown) has a short circuit between adjacent components. In order not to be formed, a partition wall having an overhang structure is formed.

In addition, an organic light emitting layer (not shown) and a negative electrode layer are sequentially stacked using a shadow mask (not shown).

Thereafter, an encapsulation layer made of metal or glass or a passivation layer made of inorganic or organic material to protect the organic light emitting layer and the negative electrode layer vulnerable to moisture and oxygen on the front surface including the negative electrode layer, or the like. layer) to block the organic electroluminescent device from the outside.

Such a method of manufacturing the organic light emitting display device according to the present invention has the following effects.

In order to further reduce the contact resistance and line resistance of the transparent electrode layer pattern used as the positive electrode layer, a metal layer is further formed on the transparent electrode layer pattern. By laminating a metal layer on a transparent substrate including an electrode layer pattern and patterning the metal layer using a second photolithography technique, the problem of complicated process and rising cost is improved.

The present invention simplifies the manufacturing process by sequentially laminating a transparent electrode used as a positive electrode layer and a metal layer which reduces the resistance of the transparent electrode and patterning them by using wet or dry etching collectively using a single photolithography technique. It is effective in reducing manufacturing costs.

Claims (17)

Preparing a transparent substrate having a pixel region and a pad region; Forming a transparent electrode layer on the transparent substrate and a metal layer on the transparent electrode layer; Patterning the transparent electrode layer and the metal layer to form a metal layer pattern on each of the plurality of stripe-shaped transparent electrode layer patterns and the transparent electrode layer patterns of the pad region; Forming a lattice-shaped insulating layer pattern on the transparent substrate including the plurality of transparent electrode layer patterns; Forming a plurality of partitions on the insulating layer pattern orthogonal to the plurality of transparent electrode layer patterns; Forming an organic emission layer on the plurality of transparent electrode layer patterns; A method of manufacturing an organic light emitting display device, comprising forming a negative electrode layer on the organic light emitting layer. The method of claim 1, wherein the transparent electrode layer is indium tin oxide (ITO) or indium zinc oxide (IZO), the metal layer is chromium (Cr), molybdenum (Mo), molybdenum tungsten alloy (MoW), molybdenum / aluminum Molybdenum (Mo / Al / Mo), Molybdenum / Aluminum Neodymium Alloy / Molybdenum (Mo / AlNd / Mo), Molybdenum / Aluminum (Mo / Al), Aluminum / Molybdenum (Al / Mo), Aluminum (Al), Aluminum Method of manufacturing an organic electroluminescent display device, characterized in that one selected from neodymium alloy (AlNd), molybdenum / aluminum neodymium alloy (Mo / AlNd), and aluminum neodynium alloy / molybdenum (AlNd / Mo) According to claim 1, wherein the transparent electrode layer is about 1,500 ~ 2,000 Å thickness, the metal layer 23 is formed to about 1000 ~ 3000 A thickness, sheet resistance of the transparent electrode layer pattern (sheet resistance) is less than 10 Ω / □ Method for manufacturing organic electroluminescent display device The method of claim 1, wherein the forming of the transparent electrode layer pattern and the metal layer pattern is performed. Applying a photoresist film on the metal layer pattern; Exposing the photosensitive film using an exposure mask in which the pixel region is halftone and the pad region is normal tone, and then developing the photoresist to form a halftone photosensitive film pattern in the pixel region and a normal tone photosensitive film pattern in the pad region; Etching the metal layer and the transparent electrode layer in sequence by using the halftone photoresist pattern and the normal tone photoresist pattern; Performing the ashing process to remove the photoresist pattern of the halftone, and removing a portion of the upper layer of the photoresist pattern of the normal tone; And forming a metal layer pad pattern by etching the metal layer using the photoresist pattern of the normal tone as a mask. The method of claim 1, wherein the forming of the transparent electrode layer pattern and the metal layer pattern is performed. Applying a photoresist film on the metal layer pattern; Exposing the photosensitive film using an exposure mask in which the pixel region is halftone and the pad region is normal tone, and then developing the photoresist to form a halftone photosensitive film pattern in the pixel region and a normal tone photosensitive film pattern in the pad region; Dry etching the metal layer using the halftone photoresist pattern and the normal tone photoresist pattern as a mask to remove the halftone photoresist pattern by ashing and removing a portion of an upper layer of the normal tone photoresist pattern ; Forming a transparent electrode layer pattern by etching the transparent electrode layer using the exposed metal layer and the normal tone photosensitive film pattern as a mask; And forming the metal layer pad pattern by etching the photoresist pattern of the normal tone with a mask. The halftone region of the mask used to form the halftone pattern of the photoresist is selected from slit, lattice, and chevron. Manufacturing method of organic electroluminescent display The method of manufacturing the organic light emitting display device according to claim 4 or 5, wherein the halftone region of the mask used to form the halftone pattern is formed of a semi-transmissive material having a low transmittance. The organic electroluminescent display according to claim 4 or 5, wherein the photoresist pattern of the normal tone is about 1.5 to 2.5 [mu] m, and the photoresist pattern of the halftone is about 1/2 or less of the thickness of the normal tone. Device manufacturing method The method according to claim 4 or 5, wherein when the metal layer is used as a chromium layer, wet etching is performed with (NH4) 2Ce (NO3) 6 + aqueous solution of nitric acid (NO3), and when the molybdenum tungsten (MoW) layer is used, SF6 / O2. Method of manufacturing an organic light emitting display device characterized in that dry etching using the / He gas 6. The method of claim 4, wherein the transparent electrode layer is wet-etched using an aqueous hydrochloric acid (HCl) + nitric acid (HNO 3) solution when the transparent electrode layer is used as an ITO layer. Preparing a transparent substrate having a pixel region and a pad region; Forming a transparent electrode layer on the transparent substrate and a metal layer on the transparent electrode layer; The transparent electrode layer and the metal layer are patterned to form a plurality of stripe-shaped transparent electrode layer patterns, a metal layer pixel pattern on each of the transparent electrode layer patterns of the pixel region, and a metal layer pattern on each of the transparent electrode layer patterns of the pad region. Forming; Forming a lattice-shaped insulating layer pattern on the transparent substrate including the plurality of transparent electrode layer patterns; Forming a plurality of partitions on the insulating layer pattern orthogonal to the plurality of transparent electrode layer patterns; Forming an organic emission layer on the plurality of transparent electrode layer patterns; A method of manufacturing an organic light emitting display device, comprising forming a negative electrode layer on the organic light emitting layer. The method of claim 11, wherein the forming of the transparent electrode layer pattern and the metal layer pattern is performed. Applying a photoresist film on the metal layer pattern; The photoresist film is exposed using an exposure mask in which pixel areas are halftones and normal tones, and pad areas are normal tones, and then developed. The halftone photoresist pattern, the first normal tone photoresist pattern, and the pad region have second normal. Forming a tone photosensitive film pattern; Etching the metal layer and the transparent electrode layer sequentially using the halftone photoresist pattern, the first normal tone photoresist pattern, and the second normal tone photoresist pattern as a mask; Performing an ashing process to remove the photoresist pattern of the halftone, and removing a portion of an upper layer of the photoresist pattern of the first normal tone and the photoresist pattern of the second normal tone; And etching the metal layer using the first normal tone photosensitive film pattern and the second normal tone photosensitive film pattern as a mask to form a metal layer pixel pattern and a pad pattern. The method of claim 11, wherein the forming of the transparent electrode layer pattern and the metal layer pattern is performed. Applying a photoresist film on the metal layer pattern; The photoresist is exposed and developed by using an exposure mask in which pixel areas are halftones and normal tones, and pad areas are normal tones, and a halftone photoresist pattern, a first normal tone photoresist pattern, and a pad normal have a second normal. Forming a tone photosensitive film pattern; The metal layer is dry-etched using the halftone photosensitive film pattern, the first normal tone photosensitive film pattern, and the second normal tone photosensitive film pattern as a mask to remove the halftone photosensitive film pattern by ashing and removing the first layer. Removing a portion of the upper layer of the photoresist pattern of the normal tone and the photoresist pattern of the second normal tone; Forming a transparent electrode layer pattern by etching the transparent electrode layer using the exposed metal layer and the normal tone photosensitive film pattern as a mask; And etching the photoresist pattern of the first normal tone and the photoresist pattern of the second normal tone with a mask to form the metal layer pixel pattern and the pad pattern. Preparing a transparent substrate having a pixel region and a pad region; Forming a transparent electrode layer on the transparent substrate and a metal layer on the transparent electrode layer; Patterning the transparent electrode layer and the metal layer to form a metal layer pattern on each of the plurality of stripe-shaped transparent electrode layer patterns and the transparent electrode layer patterns of the pad region; Forming an organic emission layer on the plurality of transparent electrode layer patterns; A method of manufacturing an organic light emitting display device, comprising forming a negative electrode layer on the organic light emitting layer. The method of claim 14, further comprising forming a lattice-shaped insulating layer pattern on the transparent substrate including the plurality of transparent electrode layer patterns and a plurality of partition walls on the insulating layer pattern orthogonal to the plurality of transparent electrode layer patterns. Method of manufacturing an organic light emitting display device, characterized in that it further comprises forming Preparing a transparent substrate having a pixel region and a pad region; Forming a transparent electrode layer on the transparent substrate and a metal layer on the transparent electrode layer; The transparent electrode layer and the metal layer are patterned to form a plurality of stripe-shaped transparent electrode layer patterns, a metal layer pixel pattern on each of the transparent electrode layer patterns of the pixel region, and a metal layer pattern on each of the transparent electrode layer patterns of the pad region. Forming; Forming an organic emission layer on the plurality of transparent electrode layer patterns; A method of manufacturing an organic light emitting display device, comprising forming a negative electrode layer on the organic light emitting layer. The method of claim 16, further comprising forming a lattice-shaped insulating layer pattern on the transparent substrate including the plurality of transparent electrode layer patterns and a plurality of partition walls on the insulating layer pattern orthogonal to the plurality of transparent electrode layer patterns. Method for manufacturing an organic light emitting display device further comprising the step of forming