KR20040011855A - A Etching Solution for Constructing Black Matrix of Color CRT - Google Patents

Abstract

PURPOSE: An etching solution is provided to achieve improved uniformity of cutting and thickness of dot in the black matrix etching process. CONSTITUTION: An etching solution is used in the etching process for etching the black matrix in a dot or stripe shape at the inner surface of the panel. The etching solution contains at least one of NalO4 or dodecylbenzene sulfamic acid. The etching solution is made by mixing a small amount of sulfamic acid to NalO4. Alternatively, the etching solution is made by mixing a small amount of H2O2 to dodecylbenzene sulfamic acid.

Description

Etching solution for forming black matrix for color cathode ray tube {A Etching Solution for Constructing Black Matrix of Color CRT}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a color cathode ray tube, and more particularly, to an etching solution for forming a black matrix capable of excellent contrast and color sharpness of a screen on a panel surface.

As shown in FIG. 1, a general color cathode ray tube is illustrated in FIG. 1, and a panel 1 in which a fluorescent film 3 is formed on an inner side thereof and a funnel coated with graphite having conductivity on an inner side thereof. (2) is sealed with fusion glass, and the neck portion 4 of the funnel 2 is equipped with an electron gun 6 for generating an electron beam 5, and inside the panel 1 a shadow, which is a color-selective electrode, The mask 7 is supported by the frame 8, and a deflection yoke 9 is mounted on the outer circumferential surface of the funnel to deflect the electron beam from side to side.

In the cathode ray tube configured as described above, when an image signal is input to the electron gun 6, hot electrons are emitted from the cathode of the electron gun, and the emitted electrons are accelerated and focused toward the panel 1 by a voltage applied from each electrode of the electron gun. Will proceed.

At this time, the path of the electron beam 5 is adjusted by the magnetic field of the magnet mounted on the neck of the panel, and the adjusted electron beam is injected to the inner surface of the panel 1 by the deflection yoke 9, the deflected electron beam. Is screened by passing through the slot of the shadow mask 7 and the selected electron beam 5 collides with the fluorescent film 3 on the inner surface of the panel to emit light to reproduce the image signal.

In addition, when the electron beam 5 passes through the slot of the shadow mask 7 and reaches the fluorescent film, an inner shield that shields the geomagnetic shield behind the frame when viewed from the panel side to prevent deflection of the electron beam due to the influence of geomagnetism. Inner Shield) 10 is attached.

In the above structure, the screen forming method is as shown in Fig. 2, (A) after washing the inner surface of the panel (1) with caustic soda and hydrofluoric acid, after applying the photoresist solution (11), a photoresist solution on the inner surface of the panel (b) When the red, blue, and green fluorescent film positions are exposed to red, blue, and green positions on the exposure apparatus by using a high pressure mercury lamp, (c) the exposed portion of the photoresist 11 at this position is photocured and unexposed. The part is not cured, but when it is developed into pure water having a constant developing pressure of 3 to 5 kgf / m 2, the parts except for the part exposed to three colors are removed by the difference in solubility.

On the other hand, as a photoresist solution (11), the water-soluble vinyl copolymer photosensitive solution of polyacrylamide diaccetonacrylamide, which is PDA-based, is introduced in Japanese Patent Application Laid-Open No. 50-33764. Photosensitive solutions of water-soluble azide compounds, such as Poly Vinyl Pyrrolidone, are introduced.

As shown in FIG. 2 (d), the graphite liquid 12 is applied / dried on the photoresist pattern 13, and then (e) an etching liquid (H ₂ O ₂ + NH ₄ OH) 14 is applied and used. (F) The graphite 12 and the photoresist pattern 13 in the portion where the photoresist pattern 13 is formed are peeled off and removed. Through the above process, a black matrix film 15, which is a light absorption film, is formed on the panel glass as shown in FIG.

When the black matrix film 15 is formed as described above, the red (R), green (G), and blue (B) tricolor fluorescent films 3a, 3b, and 3c are sequentially formed. (3a) A slurry composed of a red luminescent phosphor, a photoresist solution 11, water, a dispersant, a sensitizer, and the like is formed on the inner surface of the panel 1 on which the black matrix film 15 is formed to form, dry, expose, and develop the resin. This completes the red fluorescent film.

Subsequently, the same procedure as described above is repeated to continuously form the green fluorescent film 3b and the blue fluorescent film 3c. The metal reflective film 16 such as aluminum is directly formed on the fluorescent film having the pattern by using a vacuum deposition method.

On the other hand, a silane coupling agent, which is an adhesive used for PVP-based photoresists, generally has an RSiX ₃ chemical structure, and reacts with an organic functional group R having an substituent bonded to an organic material in the same molecule and an inorganic material. It has a gas-decomposable group X.

That is, R is an organofunctional group having vinyl, glycoxytoxy, methacryl, amino, mercapto groups and the like, and X is mainly chlorine and alkoxy groups.

For this reason, a silane coupling agent interposes at an organic material and an inorganic interface, and plays a neutral role which couples both.

Silane used for PAD + Azide is vinyl trichlorosilane (CH ₂ = CHSiCl ₃ ), and the boiling point is 91 ??, but the silane coupling agent used for PVP is vinyltris. (2-methoxyethoxy, CH ₂ = CHSi (CO ₂ H ₄ OCH ₃ ) ₃ ) Silane boiling point is 285 ℃, H ₂ O ₂ + NH ₄ which is a conventional etching solution After etching with OH or H ₂ O ₂ + sulfonic acid, as shown in (a) of FIG. 4, the cutting of the dots is difficult, or as shown in (b), dots Properties are poor, such as uneven thickness.

Accordingly, an object of the present invention is to solve the above-described problems, and the sodium iodide (NaIO ₄ ) solution of the photoresist used for PVP + DAS, DAP, PVP-based photoresist during the manufacturing process of color cathode ray tube ) And dodecylbenzne sulfamic acid to provide an etching solution for forming black matrices for color cathode ray tubes, in which constant cutting and dot thickness are uniform during black matrix etching.

1 is a schematic diagram of a typical color cathode ray tube

2 is a diagram illustrating a general black matrix etching process.

3 is a view showing a red, green, and blue fluorescent film and a fluorescent surface on which black metrics are formed.

4 is a diagram showing black matrices in which a photoresist film according to the prior art is etched.

5 is a black matrix when etched with a sodium iodide (NaIO ₄ ) solution and a dodecylbenzne sulfamic acid solution according to the present invention.

*** Explanation of symbols for the main parts of the drawing ***

1: panel 3: fluorescent surface

5: electron beam 11: photoresist solution

12: graphite 13: photoresist pattern

14: etching solution 15: black matrix film

The first technical solution of the present invention for achieving the above object is an etching solution for forming a black matrix film for a color cathode ray tube to etch the black matrix in the form of dots or stripes on the inner surface of the panel. The black matrix etching solution may include sodium iodide (NaIO ₄ ) and at least one of dodecylbenzne sulfamic acid.

A second technical solution of the present invention is characterized in that a small amount of sulfamic acid is mixed with sodium iodide (NaIO ₄ ).

According to a third technical solution of the present invention, a small amount of hydrogen peroxide (H ₂ O ₂ ) is mixed with the dodecylbenzene sulfamic acid.

In addition, the fourth technical solution of the present invention is characterized in that the etching solution is used after heating at a temperature of 50 ~ 65 ℃.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The present invention is an etching solution used to improve the etching performance of the graphite film of PVP-based photoresist photoresist and to improve the screen quality, and the adhesion of the graphite film of the silane coupling agent which is an adhesive of the photoresist. For the release, the following chemicals were used to dissolve the silane (Silane) coupling agent, thereby removing the graphite as shown in FIG.

First, at least one of sodium iodide (NaIO ₄ ) and dodecylbenzne sulfamic acid (DBSH) is etched to etch the black mattress layer in the form of dots or stripes. It is characterized by using as.

The sodium iodide (NaIO ₄ ) is a periodate (M ¹ ₅ IO ₆ ), iortho periodate (M ¹ ₈ I ₂ O ₁₁ ), meta periodate (M ¹ IO ₄ ), meso periodate (M ¹ ₃ IO ₅ ), colorless and poorly soluble crystals, but alkali metal salts are often soluble in water.

In addition, it is a strong oxidizing agent that causes hydrolysis in aqueous solution, potassium metaiodate (KIO ₄ ) has a property of melting about 0.51g in 100g of water at 20 ℃.

And the action and an acid solution of manganese by permanganate ion (MnO ₄ ^-) of the purple-red, so the generation, in a small amount of manganese sseuyimyeo Colorimetric Determination, is sometimes used in combination with a small amount of sulfamic acid (Sulfamic acid).

Therefore, it can be used as an etching solution of PVP-based photoresist, and a small amount of sulfamic acid is mixed with sodium iodide (NaIO ₄ ) and used. At this time, when sulfonic acid becomes more than 10% of the sodium iodide (NaIO ₄ ) and sulfonic acid mixture, the etching effect is not improved anymore, and the manufacturing cost is increased, so sulfamic acid is preferably about 1 to 10% of the total mixture. .

As another etching solution, dodecylbenzene sulfamic acid (hereinafter referred to as DBSH) is used. The DBSH is an aromatic sulfonic acid, has aromatic properties, and has a benzene group (C ₆ H ₆ ), a hydroxyl group (OH), a sulfonic acid group (RSOH ₃ ), and a phenol group (C ₆ H ₅ SO ₃ H).

The DBSH has a molecular weight of 158 and is composed of 1.5 hydrate, dihydrate, and anhydride. The melting point of the dihydrate is 43 to 44 ° C, and the melting point of the anhydride is 66 to 67 ° C. When sodium salt is dissolved with sodium hydroxide (NaOH), sodium phenol is formed, and when acidified, it becomes phenol.

That is, benzene is heated together with fuming sulfuric acid to dissolve the silane coupling agent, which is an adhesive, and to be mixed with a small amount of hydrogen peroxide (H ₂ O ₂ ).

5 is a diagram in which graphite is removed by the etching solution as described above.

The DBSH may also show an optimal effect in etching by setting the amount of hydrogen peroxide (H ₂ O ₂ ) to 1 to 10% of the total mixture.

Meanwhile, the etching solution of sodium iodide (NaIO ₄ ) and DBSH is preferably used after heating at a temperature of 50 to 65 ° C., which is to shorten the time required to remove the graphite film and to heat 50 to 65 ° C. No toxicity was observed.

As such, those skilled in the art will appreciate that the present invention can be implemented in other specific forms without changing the technical spirit or essential features thereof. Therefore, the above-described embodiments are to be understood as illustrative and not restrictive in all respects, and the scope of the present invention is indicated by the appended claims rather than the foregoing description, and the meaning and scope of the claims and All changes or modifications derived from the equivalent concept should be interpreted as being included in the scope of the present invention.

As described above, the present invention uses the etching solution for etching to form the black matrix of the color cathode ray tube by using one of sodium iodide (NaIO ₄ ) and dodecylbenzene sulfamic acid, thereby etching the black matrix. Constant cutting and dot thickness are uniform.

Claims (6)

In the etching solution for forming a black matrix for a color cathode ray tube for etching the black matrix in the form of dots or stripes on the inner surface of the panel, The black matrix etching solution comprises sodium iodide (NaIO ₄ ) and at least one of dodecylbenzene sulfamic acid (Dodecylbenzne sulfamic acid) is an etching solution for forming a black matrix for color cathode ray tubes. The method of claim 1, Etching solution for forming the black matrix for color cathode ray tube, characterized in that the sodium iodide (NaIO ₄ ) is mixed with a small amount of sulfamic acid (Sulfamic acid). The method of claim 1, The dopingylbenzene sulfamic acid (Dodecylbenzene sulfamic acid) and a small amount of hydrogen peroxide solution (H ₂ O ₂ ) characterized in that the mixing solution for forming a black matrix for color cathode ray tube, characterized in that used. The method of claim 2, The sulfamic acid (Sulfamic acid) is an etching solution for forming a black matrix for the color cathode ray tube, characterized in that the mixture of 1% to 10% compared to 100% of the black matrix etching (Etching) solution. The method of claim 3, The hydrogen peroxide solution (H ₂ O ₂ ) is an etching solution for forming a black matrix for a color cathode ray tube, characterized in that the mixture of 1% to 10% of the black matrix etching (Etching) solution. The method of claim 1, The etching solution is an etching solution for forming a black matrix for a color cathode ray tube, characterized in that it is used after heating at a temperature of 50 ~ 65 ℃.