KR20040003715A - Apparatus for treating a wafer - Google Patents

Abstract

PURPOSE: A wafer processing apparatus is provided to be capable of homogeneously applying ultrasonic vibration to the cleaning solution supplied to the surface of a wafer and uniformly supplying dry gas to the wafer surface. CONSTITUTION: A wafer processing apparatus(200) is provided with a support part(210) for holding the peripheral portion of a wafer and vertically supporting the wafer, and a cleaning part. The cleaning part includes a cleaning solution supply part(220) having the first slit used for supplying a cleaning solution to the surface of the wafer, an ultrasonic vibration part(230) installed at the lower portion of the cleaning solution supply part adjacent to the wafer surface for applying ultrasonic vibration to the cleaning solution, and a driving part for moving the cleaning solution supply part and the ultrasonic vibration part up and down.

Description

Wafer Processing Apparatus {Apparatus for treating a wafer}

The present invention relates to a wafer processing apparatus. More specifically, the present invention relates to an apparatus for cleaning a wafer by supplying a cleaning liquid or chemical applied with ultrasonic vibration to the surface of the wafer, and supplying a drying gas to dry the wafer.

In general, semiconductor devices are manufactured by iteratively performing unit processes such as deposition, photolithography, etching, polishing, cleaning and drying. Among the unit processes, the cleaning process is a process of removing foreign substances or unnecessary films adhering to the surface of the wafer during each unit process. The pattern formed on the wafer is miniaturized and the aspect ratio of the pattern is increased. As it grows, it becomes increasingly important.

The apparatus for performing the cleaning process is divided into a batch type cleaning apparatus for cleaning a plurality of wafers at the same time and a sheet type cleaning apparatus for cleaning wafers in sheet units. The batch cleaning apparatus cleans a plurality of wafers at the same time using a cleaning tank containing a cleaning liquid for cleaning the wafers. In this case, ultrasonic vibration may be applied to the cleaning liquid contained in the cleaning tank to improve the cleaning efficiency. The single wafer cleaning apparatus includes a chuck for supporting the wafer and nozzles for supplying a cleaning liquid to the front or rear surface of the wafer. The cleaning liquid supplied to the wafer may be supplied in a state where ultrasonic vibration is applied, or may be applied by ultrasonic vibration in a state where it is supplied on a wafer.

As an example of a single wafer cleaning apparatus for cleaning wafers by applying ultrasonic vibration to the cleaning liquid, US Pat. No. 6,039,059 (issued to Bran) uses megasonic energy to vibrate the cleaning liquid supplied to the wafer to prepare the wafer. An apparatus for cleaning is disclosed. The cleaning apparatus has a long elongated quartz probe for applying megasonic energy to the cleaning liquid. In addition, US 2001-32657 (Itzkowitz, Herman) discloses a megasonic processing apparatus having a megasonic transducer for applying mechanical vibration to a cleaning liquid or an etching liquid provided on a wafer.

1 is a schematic configuration diagram for explaining a sheet type cleaning apparatus having the quartz probe.

Referring to FIG. 1, the wafer W is placed on a circular chuck 110, and the chuck 110 is rotated by the rotational force provided from the motor 120. The chuck 110 connects the circular ring 112 for supporting the wafer W and the hub 114 and the hub 114 and the circular ring 112 installed at the upper end of the rotation shaft 122. It includes a plurality of spokes 116.

In the upper portion of the wafer W placed on the chuck 110, a first nozzle 130 for providing a cleaning liquid for cleaning the wafer W to an upper surface of the wafer W is provided, and the wafer W is rotated. A bowl 140 is disposed to surround the chuck 110 to prevent the cleaning liquid from scattering to the peripheral portion of the wafer W.

A discharge port 150 for discharging the cleaning liquid separated from the wafer W is connected to the bottom of the bowl 140, and a rotating shaft 122 for transmitting the rotational force of the motor 120 to the chuck 110 is provided in the bowl ( It is installed through the bottom center part of 140). A slot 140a is formed at one side of the bowl 140 in the vertical direction, and a quartz probe 160 for applying ultrasonic vibration to the cleaning liquid provided on the upper surface of the wafer W through the slot 140a is installed. have.

The quartz probe 160 has a long rod shape, is disposed toward the center portion from the peripheral portion of the wafer W, and is disposed parallel to the wafer W so as to have a predetermined distance from the upper surface of the wafer W. On the other hand, a second nozzle 132 for supplying a cleaning liquid to the lower surface of the wafer W placed on the chuck 110 is provided through one side of the bowl 140.

A method of performing the cleaning process of the wafer W using the cleaning apparatus 100 having the above structure will be described below.

First, the wafer W is placed on the chuck 110. Subsequently, the motor 120 is operated to rotate the wafer W, and the cleaning liquid is supplied to the upper and lower surfaces of the wafer W through the first nozzle 130 and the second nozzle 132.

The cleaning liquid provided on the upper surface of the wafer W is provided between the quartz probe 160 and the upper surface of the wafer W by the rotation of the wafer W. As described above, ultrasonic vibration is applied from the quartz probe 160 to the cleaning liquid provided between the quartz probe 160 and the wafer W, and fine particles attached to the upper surface of the wafer W are removed by the vibrating cleaning liquid.

In this case, a chemical for removing an unnecessary film or foreign matter on the wafer W may be provided on the upper surface of the wafer W. The ultrasonic vibration promotes chemical reaction of the unnecessary film or foreign matter on the chemical and the wafer W to improve the removal efficiency of the unnecessary film or foreign matter on the wafer W.

The cleaning liquid separated from the upper or lower surface of the wafer W is blocked by the side wall of the bowl 140, moved to the bottom of the bowl 140, and discharged through the outlet 150 connected to the bottom of the bowl 140. do.

In the cleaning apparatus 100 as described above, since the ultrasonic vibration provided through the quartz probe 160 is applied to the cleaning liquid according to the supply flow rate of the cleaning liquid and the rotational speed of the wafer W, the wafer W is changed. There is a disadvantage that it is not uniformly delivered to the cleaning liquid provided on the upper surface of the, there is a problem that the cleaning efficiency for each portion of the wafer (W) is changed. In addition, since the cleaning liquid provided on the wafer W and the quartz probe 160 are in contact with each other, the cleaning time is long because the application efficiency of ultrasonic vibration is low.

In the case of the sheet cleaning apparatus 100 as described above, when the cleaning process is finished, deionized water is provided on the rotating wafer W to finally perform a rinsing process. When the rinse process is completed, a drying process is performed in which the wafer W is rotated at high speed to remove moisture on the wafer by centrifugal force. In the drying process, isopropyl alcohol vapor or liquid isopropyl alcohol may be supplied in a mist form. The isopropyl alcohol weakens the surface tension of moisture present on the wafer W to remove moisture. Improve the efficiency.

In recent years, as the pattern formed on the wafer becomes finer and the aspect ratio of the pattern becomes larger, the drying process by high speed rotation causes problems such as damage of the fine pattern by centrifugal force. There is a problem in that it is not possible to completely remove the moisture remaining in the trench or contact hole having a high aspect ratio and drying efficiency due to the difficulty in uniformly supplying isopropyl alcohol vapor to the wafer surface. This lowers, and defective factors such as water marks are generated.

A first object of the present invention for solving the above problems is to provide a wafer processing apparatus capable of uniformly applying ultrasonic vibration to the cleaning liquid supplied to the surface of the wafer and uniformly supplying dry gas to the surface of the wafer.

The second object of the present invention for solving the above problems is to provide a wafer processing apparatus capable of uniformly applying ultrasonic vibration to the cleaning liquid supplied to both sides of the wafer and supplying dry gas uniformly to both sides of the wafer. have.

A third object of the present invention for solving the above problems is to clean the two wafers at the same time, improve the application efficiency of the ultrasonic vibration applied to the cleaning liquid, and the wafer processing apparatus capable of drying the two wafers at the same time To provide.

1 is a schematic diagram illustrating a conventional wafer cleaning apparatus.

2 is a schematic diagram illustrating a wafer processing apparatus according to a first embodiment of the present invention.

FIG. 3 is a front view illustrating the cleaning liquid supply unit and the dry gas supply unit illustrated in FIG. 2.

4 is a cross-sectional view for explaining a cleaning liquid supply unit for supplying a cleaning liquid to the surface of the wafer shown in FIG. 2.

FIG. 5 is a cross-sectional view for describing a dry gas supply unit for supplying a dry gas to the surface of the wafer illustrated in FIG. 2.

6 is a cross-sectional view illustrating another example of the dry gas supply unit illustrated in FIG. 2.

FIG. 7 is a schematic perspective view for describing the support unit illustrated in FIG. 2.

8 is a schematic diagram illustrating a wafer processing apparatus according to a second embodiment of the present invention.

FIG. 9 is a schematic cross-sectional view for explaining a cleaning liquid supply unit illustrated in FIG. 8.

FIG. 10 is a schematic cross-sectional view for describing a dry gas supply unit illustrated in FIG. 8.

11A and 11B are perspective views for explaining the operation of the support unit shown in FIG. 8.

12A to 12E are views for explaining the operation of the support unit according to the wafer processing step.

13A and 13B are schematic perspective views for explaining another example of the support unit shown in FIG. 8.

14 is a schematic diagram illustrating a wafer processing apparatus according to a third embodiment of the present invention.

FIG. 15 is a schematic cross-sectional view for explaining a cleaning liquid supply unit shown in FIG. 14.

FIG. 16 is a schematic cross-sectional view for describing a dry gas supply unit illustrated in FIG. 14.

FIG. 17 is a schematic configuration diagram for explaining an apparatus having the wafer processing apparatus shown in FIG. 14.

Explanation of symbols on the main parts of the drawings

200: wafer processing apparatus 210: support portion

212 head 214 rod

220: cleaning liquid supply unit 222: cleaning liquid containing unit

224: first slit 230: ultrasonic vibration unit

240: first driving unit 260: dry gas supply unit

262: dry gas receiving unit 264: second slit

270: second drive unit W: wafer

The present invention for achieving the first object, the holding means for holding the peripheral portion of the wafer, the support means for supporting the wafer in the vertical direction, and the first for supplying a cleaning liquid to the surface of the wafer supported in the vertical direction The slits are formed in a horizontal direction and provide a wafer processing apparatus comprising cleaning means for moving from the top to the bottom of the wafer.

The cleaning means is provided below the cleaning liquid supply part with the cleaning liquid supply part having the first slit and the surface of the wafer supported in the vertical direction, and applies ultrasonic vibration to the cleaning liquid supplied to the surface of the wafer. Ultrasonic vibration unit for, and the driving unit for moving the cleaning liquid supply unit and the ultrasonic vibration unit up and down. The wafer processing apparatus includes a second slit for supplying dry gas to a surface of the wafer supported in a vertical direction in a horizontal direction, and may further include drying means for moving from an upper portion to a lower portion of the wafer.

The cleaning liquid is supplied entirely to the surface of the wafer through the first slit of the cleaning liquid supply part. The cleaning liquid flows off the surface of the wafer by gravity, and ultrasonic vibration is applied to the cleaning liquid in contact with the surface of the wafer. In this case, the ultrasonic vibration unit may be formed in a bar shape, and may be disposed in parallel with the first slit of the cleaning liquid supply unit. Thus, ultrasonic vibrations are uniformly applied to the cleaning liquid in contact with the surface of the wafer, thereby improving the cleaning efficiency of the wafer. In addition, since the drying gas is uniformly supplied to the surface of the wafer through the second slit, the drying efficiency of the wafer is improved.

The present invention for achieving the second object, the holding means for holding the peripheral portion of the wafer, the support means for supporting the wafer in the vertical direction, and supplying the first cleaning liquid to the first surface of the wafer supported in the vertical direction A first cleaning liquid supply unit having a first slit for forming in a horizontal direction and a second slit for supplying a second cleaning liquid to a second surface opposite to the first surface of the wafer supported in a vertical direction are formed in a horizontal direction. An ultrasonic vibration unit for applying ultrasonic vibration to the first cleaning liquid or the second cleaning liquid supplied from a selected second cleaning liquid supplying unit, the first cleaning liquid supplying unit and the second cleaning liquid supplying unit and in contact with the wafer; And a first driving part for moving the cleaning liquid supply part, the second cleaning liquid supply part, and the ultrasonic vibration part from the upper part to the lower part of the wafer. Providing a wafer processing apparatus, characterized by.

When ultrasonic vibration is applied to the first cleaning liquid supplied to the first surface of the wafer, the ultrasonic vibration is transmitted to the second cleaning liquid through the first cleaning liquid and the wafer. Therefore, both sides of the wafer are simultaneously cleaned by the first cleaning liquid to which ultrasonic vibration is directly applied and the second cleaning liquid to which ultrasonic vibration is indirectly applied.

A wafer processing apparatus according to an aspect of the present invention for achieving the third object includes a first wafer having a first surface and a second surface opposite to the first surface, and a third surface opposite to the third surface. Holding means for holding the peripheral portions of the first wafer and the second wafer so that the second wafers having four sides face each other, and supporting the first wafer and the second wafer in a vertical direction, and the first A first cleaning liquid supply unit having a first slit for supplying a first cleaning liquid to a first surface of a wafer in a horizontal direction, and a second surface of the first wafer and a third surface of the second wafer facing each other; A second cleaning liquid supply unit having a second slit and a third slit for supplying second cleaning liquid, respectively, in a horizontal direction, and a fourth slit for supplying a third cleaning liquid to a fourth surface of the second wafer is horizontal Third cleaning liquid supply unit And an ultrasonic vibration unit for applying ultrasonic vibration to the second cleaning liquid in contact with the second surface of the first wafer and the third surface of the second wafer, and the first cleaning liquid supply unit and the second cleaning liquid supply unit. And a first driving part for moving a third cleaning liquid supply part and the ultrasonic vibration part from the upper part to the lower part of the first wafer and the second wafer.

A wafer processing apparatus according to another aspect of the present invention for achieving the third object includes a wafer stage for supporting a wafer cassette for storing a plurality of wafers, a wafer processing portion for processing the wafers, and a housing in the wafer cassette. Two wafers are selected from among the plurality of wafers, and the two wafers are rotated in a vertical direction to face each other and are transferred to the wafer processing unit, and the two wafers processed by the wafer processing unit are A transfer robot for transferring to the wafer cassette.

The wafer processing unit may include a first wafer having a first surface selected by the transfer robot and transferred to the wafer processing unit and a second surface opposite to the first surface, and a fourth surface opposite to the third surface and the third surface. Holding means for holding the peripheral portion of the second wafer having, the support means for supporting the first wafer and the second wafer in the vertical direction, and a first slit for supplying a first cleaning liquid to the first surface of the first wafer The first cleaning liquid supply part formed in the horizontal direction, and the second slit and the third slit for supplying the second cleaning liquid to the second surface of the first wafer and the third surface of the second wafer, which face each other, A second cleaning liquid supply part formed in a horizontal direction, a third cleaning liquid supply part in which a fourth slit for supplying a third cleaning liquid to a fourth surface of the second wafer is formed in a horizontal direction, and the first wafer Second surface and the second way An ultrasonic vibration unit for applying ultrasonic vibration to the second cleaning liquid in contact with the third surface of the fur, the first cleaning liquid supplying unit, the second cleaning liquid supplying unit, the third cleaning liquid supplying unit and the ultrasonic vibration unit of the first wafer And a first driving part for moving from the top to the bottom of the second wafer.

The ultrasonic vibration unit may be formed in a bar shape, and may be disposed parallel to the second slit, the third slit, the first wafer, and the second wafer. Therefore, the ultrasonic vibration unit may uniformly apply ultrasonic vibration to the second cleaning liquid supplied to the second surface of the first wafer and the third surface of the second wafer, respectively, and the application efficiency of the ultrasonic vibration is improved. In addition, the ultrasonic vibration applied to the second cleaning liquid is transmitted to the first cleaning liquid through the first wafer and to the second cleaning liquid through the second wafer. Therefore, both surfaces of the first wafer and the second wafer are simultaneously cleaned, and the time for the cleaning process is shortened.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 2 is a schematic configuration diagram illustrating a wafer processing apparatus according to a first embodiment of the present invention, and FIG. 3 is a front view illustrating the cleaning liquid supply unit and the dry gas supply unit illustrated in FIG. 2. FIG. 4 is a cross-sectional view for describing a cleaning liquid supply unit for supplying a cleaning liquid to the surface of the wafer illustrated in FIG. 2, and FIG. 5 illustrates a dry gas supply unit for supplying a dry gas to the surface of the wafer illustrated in FIG. 2. It is a section for.

2 to 5, the wafer processing apparatus 200 according to the first exemplary embodiment includes a support 210 for supporting the wafer W, and a cleaning unit for cleaning the wafer W. As shown in FIG. do.

The support part 210 grips the peripheral part of the wafer W, and supports the wafer W in the vertical direction. The support 210 includes a plurality of heads 212 and a plurality of rods 214 for gripping both peripheral portions of the wafer (W). Heads 212 are respectively installed at one end of rods 214. Preferably, two heads 212 are provided at both peripheral portions of the wafer W, respectively. The head 212 has a relatively short rod shape, and the end of the head 212 is in close contact with the peripheral portion of the wafer W by rotation. Detailed description of the support 210 will be described later.

The cleaning unit includes a cleaning liquid supply unit 220 for supplying a cleaning liquid to the surface of the wafer W, and an ultrasonic vibration unit 230 for applying ultrasonic vibration to the cleaning liquid supplied to the surface of the wafer W.

The cleaning solution supply unit 220 has a rod shape longer than the diameter of the wafer W, and a cleaning solution accommodation unit 222 for accommodating the cleaning solution is formed therein, and the cleaning solution supply unit 220 supplies a cleaning solution to the surface of the wafer W. One slit 224 is formed to be connected to the cleaning liquid container 222. The cleaning solution supply unit 220 is disposed in the horizontal direction to be adjacent to the surface of the wafer W supported in the vertical direction, and the length of the first slit 224 corresponds to the diameter of the wafer W. That is, the length of the first slit 224 is the same as the diameter of the wafer (W) or longer than the diameter of the wafer (W).

The ultrasonic vibration unit 230 has a circular bar shape and is disposed in parallel with the first slit 224 to be adjacent to the surface of the wafer W at the lower portion of the cleaning liquid supply unit 220. Therefore, ultrasonic vibration is applied from the ultrasonic vibration unit 230 to the cleaning liquid supplied from the cleaning liquid supply unit 220 and in contact with the surface of the wafer W and flowing downward.

The cleaning liquid is uniformly provided on the surface of the wafer W through the first slit 224 of the cleaning liquid supply unit 220, and the ultrasonic vibration unit 230 applies ultrasonic vibration to the cleaning liquid in contact with the surface of the wafer W. Is authorized.

The first driving unit 240 for driving the cleaning solution supply unit 220 and the ultrasonic vibration unit 230 up and down is connected to both ends of the cleaning solution supply unit 220 and the ultrasonic vibration unit 230. The first moving block 242a and the second moving block 242b are connected to both ends of the cleaning liquid supplying unit 220 and the ultrasonic vibrating unit 230, and the first moving block 242a and the second moving block 242b. The cleaning liquid supply line 244 for supplying the cleaning liquid and the high frequency power line 246 to which high frequency power for ultrasonic vibration is applied are respectively connected.

The first moving block 242a and the second moving block 242b are vertically driven by a ball screw type power transmission device. The first moving block 242a and the second moving block 242b are connected to the first ball block 248a and the second ball block 248b, which are commonly referred to as linear motor blocks (LM blocks), respectively. . The first ball block 248a and the second ball block 248b are connected to the first ball guide 250a and the second ball guide 250a, which are commonly referred to as linear motor guides (LM guides), respectively. It is guided and moved up and down by a first ball screw (not shown) and a second ball screw (not shown) respectively rotated by the first motor 252a and the second motor 252b.

The cleaning liquid supplying unit 220 and the ultrasonic vibrating unit 230 supply the cleaning liquid to the surface of the wafer W while moving from the top of the wafer W to the lower side by the first driving unit 240, and ultrasonic vibration to the supplied cleaning liquid. Is applied. Therefore, the ultrasonic vibration is uniformly applied to the cleaning liquid as a whole, and thus the entire surface of the wafer W is uniformly cleaned.

The cleaning liquid supplied to the surface of the wafer W includes de-ionized water (H ₂ O), a mixture of hydrofluoric acid (HF) and de-ionized water, ammonium hydroxide (NH ₄ OH) and hydrogen peroxide (H ₂ O ₂ ). And a mixed liquid of deionized water, a mixed liquid of ammonium fluoride (NH ₄ F) and hydrofluoric acid (HF) and deionized water, and a mixed liquid containing phosphoric acid (H ₃ PO ₄ ) and deionized water.

In general, deionized water is used for the purpose of removing and rinsing foreign matter adhering to the wafer (W).

A mixed solution (DHF) of hydrofluoric acid and deionized water is used for removing the native oxide film (SiO ₂ ) and metal ions formed on the wafer (W). At this time, the mixing ratio of hydrofluoric acid and deionized water is about 1: 100 to 1: 500, and may be appropriately changed according to the conditions of the washing process.

In general, a mixed solution of ammonium hydroxide, hydrogen peroxide and deionized water, called a standard clean 1 (SC1) solution, removes an oxide film formed on the wafer W or organic matter deposited on the wafer W, and the mixing ratio is 1: 4. It is about 20-20: 4: 100, and can be changed suitably according to a washing process.

In addition, the mixed solution of ammonium fluoride, hydrofluoric acid and deionized water called Lal solution removes the oxide film formed on the wafer W, and the mixed solution containing phosphoric acid and deionized water is nitride-based which cannot be treated with the Lal solution. Remove foreign substances.

The higher the temperature of the cleaning solution, the higher the cleaning effect, and the temperature can be appropriately adjusted. In addition, the various cleaning solutions as described above may be used sequentially, depending on the type of foreign matter to be removed.

The dry gas supply unit 260 is disposed in a horizontal direction from the top of the cleaning liquid supply unit 220, and has a shape similar to that of the cleaning liquid supply unit 220. A dry gas accommodating part 262 is formed in the dry gas supply part 260 to accommodate dry gas, and the second slit 264 for supplying dry gas to the surface of the wafer W is accommodated in the dry gas. It is formed to be connected to the portion 262. The length of the second slit 264 is the same as the diameter of the wafer (W) or longer than the diameter of the wafer (W).

Both ends of the dry gas supply unit 260 are connected to the second driving unit 270 for vertically driving the dry gas supply unit 260. The third moving block 272a and the fourth moving block 272b are connected to both ends of the dry gas supply unit 270, and the dry gas is supplied to the third moving block 272a and the fourth moving block 272b. Dry gas supply line 274 is connected.

The third moving block 272a and the fourth moving block 272b are connected to the third ball block 276a and the fourth ball block 276b, respectively. The third ball block 276a and the fourth ball block 276b are guided by being connected to the third ball guide 278a and the fourth ball guide 278b, respectively, and the third motor 280a and the fourth motor 280b. It is moved up and down by the third ball screw (not shown) and the fourth ball screw (not shown) respectively rotated by the.

When the final rinse process of the surface of the wafer W by the deionized water supplied from the cleaning liquid supply unit 220 is finished, the dry gas is transferred to the surface of the wafer W through the second slit 264 of the dry gas supply unit 260. It is supplied uniformly. Since the dry gas supply unit 260 is moved by the second driving unit 270, dry gas is supplied to the entire surface of the wafer W. At this time, since the wafer W is supported in the vertical direction, even moisture inside the trench or contact hole having a large aspect ratio is completely removed. In addition, there is no risk of breakage of the pattern due to the centrifugal force generated in the case of conventional rotary drying.

As dry gas supplied to the wafer W surface, isopropyl alcohol vapor or heated nitrogen gas may be used, and a mixed gas of isopropyl alcohol and heated nitrogen gas may be used. Water remaining on the surface of the wafer W is removed from the surface of the wafer W by the Marangoni effect generated by the isopropyl alcohol vapor supplied.

Isopropyl alcohol vapor may heat the liquid isopropyl alcohol to supply only isopropyl alcohol vapor to the wafer (W) surface. It may also be provided from a bubbler that generates isopropyl alcohol vapor using heated nitrogen gas. In the case of using the bubbler, the heated nitrogen gas is used as a carrier gas, and a mixed gas of isopropyl alcohol vapor and heated nitrogen gas is supplied onto the wafer (W). In addition, the heated nitrogen gas may be supplied alone for the final drying of the wafer (W).

As described above, when isopropyl alcohol vapor is supplied to the surface of the wafer W alone, after removing moisture from the surface of the wafer W using isopropyl alcohol vapor, heated nitrogen gas is applied to the surface of the wafer W. The wafer W is finally dried by supplying it again to volatilize the isopropyl alcohol remaining on the surface of the wafer W. On the other hand, when a mixed gas of isopropyl alcohol vapor and heated nitrogen gas is supplied, moisture removal and isopropyl alcohol volatilization proceed simultaneously on the wafer W surface. The isopropyl alcohol vapor and the heated nitrogen gas are uniformly supplied to the entire surface of the wafer W vertically supported through the second slit of the dry gas supply unit 260, thereby improving the drying efficiency of the wafer W, and The occurrence of spots is reduced.

6 is a cross-sectional view illustrating another example of the dry gas supply unit illustrated in FIG. 2.

Referring to FIG. 6, the first dry gas accommodating part 262a and the second dry gas accommodating part 266a are formed in the illustrated dry gas supply part 260a. The first dry gas receiver 262a is connected to the second slit 264a for supplying the first dry gas to the surface of the wafer W, and the second dry gas receiver 266a is connected to the wafer W. It is connected to the third slit 268a for supplying the second dry gas to the surface. Isopropyl alcohol vapor is used as the first dry gas, and heated nitrogen gas is used as the second dry gas.

When the dry gas supply unit 260a shown in FIG. 6 is applied to the wafer W processing apparatus 200 shown in FIG. 2, the drying process of the wafer W is performed in a shorter time. The dry gas supply unit 260a, which is moved from the top to the bottom of the wafer W by the 270, supplies isopropyl alcohol vapor to the surface of the wafer W through the second slit 264a, and the third slit 268a. The heated nitrogen gas is supplied to the surface of the wafer (W) through). Moisture on the surface of the wafer W is removed by isopropyl alcohol, and the surface of the wafer W is finally dried by heated nitrogen gas. Therefore, the drying gas supply unit 260a needs to be moved up and down only once for the final drying of the wafer W, so that the drying time of the wafer W is shortened.

FIG. 7 is a schematic perspective view for describing the support unit illustrated in FIG. 2.

Referring to FIG. 7, the support 210 includes first, second, third, and fourth heads 212a, 212b, 212c, and 212d for gripping both peripheral portions of the wafer W. Referring to FIG. The first head 212a and the second head 212b hold the right peripheral portion of the wafer W, and the third head 212c and the fourth head 212d hold the left peripheral portion of the wafer W. do. Each of the heads 212a, 212b, 212c, and 212d is mounted at each end of the first, second, third, and fourth rods 214a, 214b, 214c, and 214d, and is attached to the third driving unit 216. Rotated by each. The third driving unit 216 rotates the first, second, third and fourth rods 214a, 214b, 214c, and 214d, respectively, to hold both peripheral portions of the wafer W. As shown in FIG. In addition, the heads 212a, 212b, 212c, and 212d, the rods 214a, 214b, 214c, and 214d and the third driver 216 are loaded and unloaded by the fourth driver 218. Is moved in the horizontal direction perpendicular to the surface of the wafer W. A hydraulic or pneumatic cylinder may be used as the fourth driving unit 218, but the heads 212a, 212b, 212c, and 212d, the rods 214a, 214b, 214c, and 214d and the third driving unit 216 may be used. It can be changed to various devices capable of linear reciprocation.

8 is a schematic diagram illustrating a wafer processing apparatus according to a second embodiment of the present invention. FIG. 9 is a schematic cross-sectional view for explaining the cleaning liquid supply unit illustrated in FIG. 8, and FIG. 10 is a schematic cross-sectional view for explaining the dry gas supply unit illustrated in FIG. 8.

8 to 10, the wafer processing apparatus 300 according to the second exemplary embodiment of the present invention grips a peripheral portion of the wafer W and supports 310 for supporting the wafer W in the vertical direction. And a first cleaning liquid supply part 320 in which a first slit 320b for supplying a first cleaning liquid to a first surface W1 of the wafer W supported in the vertical direction is formed in a horizontal direction, and in a vertical direction. The second cleaning liquid supply part 322 having a second slit 322b for supplying the second cleaning liquid to the second surface W2 opposite to the first surface W1 of the wafer W supported by the horizontal direction; , An ultrasonic vibration unit 330 for applying ultrasonic vibration to the first cleaning liquid supplied from the first cleaning liquid supply unit 320 and in contact with the wafer W, the first cleaning liquid supply unit 320, and the second cleaning liquid supply unit 322. ) And a first driver 340 for moving the ultrasonic vibration unit 330 from the top to the bottom of the wafer W.

In addition, the first dry gas supply unit 360, the third slit 360b for supplying the first dry gas to the first surface W1 of the wafer W supported in the vertical direction is formed in the horizontal direction, A second dry gas supply part 362 having a fourth slit 362b for supplying a second dry gas to the second surface W2 of the wafer W supported in the vertical direction in a horizontal direction, and a first The dry gas supply unit 360 and the second dry gas supply unit 362 include a second driving unit 370 for moving the wafer W from the upper side to the lower side.

The first cleaning liquid supplying unit 320 and the second cleaning liquid supplying unit 322 have a rod shape, and the first cleaning liquid receiving unit 320a and the second cleaning liquid containing unit 322a are formed therein, and the first cleaning liquid is accommodated. The part 320a is connected to the first slit 320b, and the second washing liquid receiving part 322a is connected to the second slit 322b. The first slit 320b and the second slit 322b are preferably formed to have the same diameter as the diameter of the wafer W or longer than the diameter of the wafer W, respectively. As illustrated, the ultrasonic vibration unit 330 is disposed under the first cleaning liquid supply unit 320 and applies ultrasonic vibration to the first cleaning liquid in contact with the first surface W1 of the wafer W. Referring to FIG. Ultrasonic vibration applied to the first cleaning liquid is indirectly applied to the second cleaning liquid supplied to the second surface W2 of the wafer W through the wafer W. Thus, ultrasonic cleaning is performed on both surfaces of the wafer W.

The first and second cleaning liquids are uniformly supplied to the first and second surfaces W1 and W2 of the wafer W by the first and second driving units 340 and 370. Ultrasonic vibration is directly and indirectly applied by the eastern portion 330, so that both surfaces of the wafer W are uniformly cleaned. At this time, by changing the loading direction of the wafer (W) according to the pattern formed on the wafer (W) it can be carried out an efficient cleaning. That is, when there is a risk that the pattern of the wafer W is damaged by the ultrasonic vibration, the wafer W is loaded so that the surface on which the pattern is formed is not adjacent to the ultrasonic vibration unit 330, and the pattern of the wafer W is ultrasonic. If there is no risk of damage to the vibration, the wafer W may be loaded and the cleaning process of the wafer W may be performed more efficiently.

The first and second cleaning liquids include deionized water, a mixture of hydrofluoric acid (HF) and deionized water, a mixture of ammonium hydroxide (NH ₄ OH) and hydrogen peroxide (H ₂ O ₂ ) and deionized water, and ammonium fluoride (NH ₄ F). And a mixed solution of hydrofluoric acid (HF) and deionized water and a mixed solution containing phosphoric acid (H ₃ PO ₄ ) and deionized water. Substantially, the same type of cleaning liquid is used for the first cleaning liquid and the second cleaning liquid, and may be configured to use different cleaning liquids. Here, descriptions of the respective cleaning liquids will be omitted.

The first driving unit 340 includes a first moving block 342a, a second moving block 342b, a first ball block 348a, a second ball block 348b, a first ball guide 350a, and a second ball. The guide 350b includes a first ball screw (not shown), a second ball screw (not shown), a first motor 352a, and a second motor 352b. The first moving block 342a and the second moving block 342b are provided at both ends of the first cleaning liquid supply part 320, the second cleaning liquid supply part 322, and the ultrasonic vibration part 330, and the cleaning liquid supply line 344. And high frequency power lines 346 for generating ultrasonic vibrations, respectively. Here, since the first driving unit 340 is the same as the wafer processing apparatus 200 according to the first embodiment, a detailed description thereof will be omitted.

The first dry gas supply unit 360 and the second dry gas supply unit 362 each have a rod shape, and the first dry gas receiving unit 360a and the second dry gas receiving unit respectively accommodate the first dry gas and the second dry gas. Two dry gas accommodating parts 362a are formed. In addition, the first dry gas receiver 360a and the second dry gas receiver 362a are respectively connected to the first dry gas on the first surface W1 and the second surface W2 of the wafer W, respectively. And a third slit 360b and a fourth slit 362b for supplying the second dry gas. The third slit 360b and the fourth slit 362b are formed to be the same as the diameter of the wafer W or longer than the diameter of the wafer W. Since the first dry gas supply unit 360 and the second dry gas supply unit 362 are moved from the top to the bottom of the wafer W by the second driving unit 370, the first surface W1 and the first surface of the wafer W are formed. The first dry gas and the second dry gas can be supplied to the two surfaces W2 as a whole. Therefore, double-sided drying of the wafer W is performed at the same time.

As the first dry gas and the second dry gas, isopropyl alcohol vapor, heated nitrogen gas, and a mixed gas of isopropyl alcohol vapor and heated nitrogen gas may be used. Since the detailed drying principle is the same as the drying principle of the wafer cleaning apparatus 200 of the first embodiment, a detailed description thereof will be omitted.

The second driving unit 370 includes a third moving block 372a, a fourth moving block 372b, a third ball block 376a, a fourth ball block 376b, a third ball guide 378a, and a fourth ball. A guide 378b, a third ball screw (not shown), a fourth ball screw (not shown), a third motor 380a, and a fourth motor 380a are included. The third moving block 372a and the fourth moving block 372b are provided at both ends of the first dry gas supply unit 360 and the second dry gas supply unit 360, and the dry gas supply line 374 is connected to the third moving block 372a and the fourth moving block 372b. . Here, since the second driving unit 370 is the same as the wafer processing apparatus 200 according to the first embodiment, detailed description thereof will be omitted.

11A and 11B are perspective views for explaining the operation of the support unit shown in FIG. 8.

11A and 11B, the support part 310 may include a first support part 312 for supporting both peripheral portions of the wafer W and a second support part for supporting the upper and lower peripheral portions of the wafer W. Referring to FIGS. 314. As shown, the first support portion 312 is provided to face the first surface W1 of the wafer W, and the second support portion 314 faces the second surface W2 of the wafer W. As shown in FIG. It is provided. However, the first support part 312 and the second support part 314 may be provided in the same direction with respect to the wafer (W).

The wafer W is formed by the first driving unit 312 while the first cleaning solution supply unit 320, the second cleaning solution supply unit 322, and the ultrasonic vibration unit 330 pass through the upper and lower portions of the wafer W. The wafer W is supported by the first support part 312 while the first cleaning liquid supply part 320, the second cleaning liquid supply part 322, and the ultrasonic vibrating part 330 pass through the center portion of the wafer W. It is supported by two support parts 314.

The first support part 312 is provided at the ends of the plurality of first rods 312a and the first rods 312a, respectively, and the plurality of first heads 312b are in close contact with both peripheral portions of the wafer W. ). The second support part 314 is provided at the ends of the plurality of second rods 314a and the second rods 314a, respectively, and the plurality of second heads closely contacting the upper and lower peripheral portions of the wafer W. 314b.

The first heads 312b and the second heads 314b have a relatively short rod shape, and are in close contact with both sides of the wafer W and upper and lower peripheral portions by rotation. The plurality of first heads 312b and the first rods 312a are respectively rotated by the third driver 316, and the ends of the first heads 312b are rotated at both sides of the wafer W by rotation. It is in close contact with each site. In addition, the first heads 312b, the first rods 312a, and the third driver 316 are moved in the horizontal direction perpendicular to the surface of the wafer W for the fourth driver 317. The plurality of second heads 314b and the second rods 314a are respectively rotated by the fifth driver 318, and the ends of the second heads 314b are rotated by the upper side of the wafer W and It adheres to the lower peripheral part, respectively. In addition, the second heads 314b, the second rods 314a, and the fifth driver 318 are moved in a horizontal direction perpendicular to the surface of the wafer W by the sixth driver 319.

Although the structures of the third driving part 316 and the fifth driving part 318 are not shown in detail, the structure may be configured in various ways. Meanwhile, although the fourth driving part 317 and the sixth driving part 319 are illustrated in the shape of a hydraulic or pneumatic cylinder, various driving devices capable of providing a linear reciprocating driving force may be used.

12A to 12E are views for explaining the operation of the support unit according to the wafer processing step.

12A to 12E, at the beginning of the wafer W processing process, the wafer W is supported by the first support part 312. The first cleaning liquid supply part 320, the second cleaning liquid supply part 322, and the ultrasonic vibration part 330 are driven by the first driving part 340 while the first support part 312 supports both peripheral portions of the wafer W. As shown in FIG. Passes through the upper portion of the wafer (W). The wafer W is supported by the second support part 314 while the first cleaning liquid supply part 320, the second cleaning liquid supply part 322, and the ultrasonic vibrating part 330 pass through the center portion of the wafer W. Subsequently, while the first cleaning liquid supply part 320, the second cleaning liquid supply part 322, and the ultrasonic vibrating part 330 pass through the lower portion of the wafer W, the wafer W is again driven by the first support part 312. Supported. At this time, the first heads 312b rotate in the opposite directions from the initial stage to support both sides of the wafer W. This is to prevent the site contacted with the wafer W before cleaning from contacting the wafer W after cleaning again. Similarly, the second heads 314b may operate differently in contact with the wafer W before and after cleaning.

When the cleaning process of the wafer W is completed as described above, the first dry gas supply unit 360 and the second dry gas supply unit 362 are moved from the top of the wafer W to the bottom by the second driving unit 370. do. At this time, the operations of the first support part 312 and the second support part 314 are the same as when the cleaning process of the wafer W is performed.

13A and 13B are schematic perspective views for explaining another example of the support unit shown in FIG. 8.

Referring to FIGS. 13A and 13B, the illustrated support part 390 includes a first support part 392 for supporting both peripheral portions of the wafer W, and a second support part for supporting the upper and lower parts of the wafer W. FIG. A support 394 is provided.

The first support portion 392 has a first rod 392a and a second rod 392b, and is connected to ends of the first rod 392a and the second rod 392b, respectively, and on both sides of the wafer W. And a first head 392c and a second head 392d for supporting the peripheral portion, respectively. The other ends of the first rod 392a and the second rod 392b have a first rod 392a, a second rod 392b, a first head 392c and a horizontal direction passing through the center of the wafer W and It is connected to the third driving unit 396 for moving the second head 392d. In addition, a fourth driver 397 for moving the first support 392 and the third driver 396 in the horizontal direction perpendicular to the surface of the wafer W is connected to the third driver 396. That is, the first support 392 is moved toward the wafer W by the fourth driver 397, and the first head 392c and the second head 392d are driven by the third driver 396. It is in close contact with each of the peripheral portions of both sides.

The second support portion 394 includes a third rod 394a and a fourth rod 394b, and is connected to ends of the third rod 394a and the fourth rod 394b, respectively, and is on the upper side of the wafer W. And a third head 394c and a fourth head 394d for supporting the lower peripheral portion, respectively. The other ends of the third rod 394a and the fourth rod 394b may include the third rod 394a, the fourth rod 394b, the third head 394c in a vertical direction passing through the center of the wafer W, and It is connected to the fifth drive unit 398 for moving the fourth head (394d). In addition, a sixth driver 399 for moving the second support 394 and the fifth driver 398 in a horizontal direction perpendicular to the surface of the wafer W is connected to the fifth driver 398. That is, the second support portion 394 is moved toward the wafer W by the sixth driver 399, and the third head 394c and the fourth head 394d are moved by the fifth driver 398 to the wafer (W). It is in close contact with the upper and lower peripheral portions of W), respectively.

14 is a schematic diagram illustrating a wafer processing apparatus according to a third embodiment of the present invention. FIG. 15 is a schematic cross-sectional view for describing the cleaning liquid supply unit illustrated in FIG. 14, and FIG. 16 is a schematic cross-sectional view for explaining the dry gas supply unit illustrated in FIG. 14.

14 to 16, the wafer cleaning apparatus 400 according to the third embodiment simultaneously processes two wafers W at a time. The first wafer W1 has a first surface W11 and a second surface W12, and the second wafer W2 has a third surface W23 and a fourth surface W24. The support part 410 has a circumference of the first wafer W1 and the second wafer W2 such that the second surface W12 of the first wafer W1 and the third surface W23 of the second wafer W2 face each other. The part is gripped and supports the first wafer W1 and the second wafer W2 so that the first wafer W1 and the second wafer W2 are positioned in the vertical direction. In this case, the second surface W12 of the first wafer W1 and the third surface W23 of the second wafer W2 may be a surface on which a pattern is formed or a back surface on which the pattern is not formed. The structure of the support 410 is similar to the support 310 of the wafer processing apparatus 300 according to the second embodiment. However, the two wafers W are supported simultaneously. Detailed description of the configuration of the support 410 is similar to that of the support 310 of the wafer processing apparatus 300 according to the second embodiment, and will be omitted.

The first cleaning liquid receiving part 420a is formed inside the first cleaning liquid supply part 420 to supply the first cleaning liquid to the first surface W11 of the first wafer W1. The first slit 420b is formed to be connected to the first cleaning solution accommodating part 420a. The first cleaning liquid supply part 420 has a rod shape and is disposed in a horizontal direction. The first slit 420b is formed in the longitudinal direction of the first cleaning liquid supply part 420 and is formed to be the same as the diameter of the wafer W or longer than the diameter of the wafer W.

The second cleaning liquid supply part 422a is formed inside the second cleaning liquid supply part 422 to supply the second cleaning liquid to the second surface W12 of the first wafer W1. The second slit 422b and the third slit 422c for supplying the second cleaning liquid to the third surface W23 of the second wafer W2 are formed to be connected to the second cleaning liquid accommodating part 422a. . The second cleaning liquid supply part 422 has a rod shape and is disposed in a horizontal direction. The second slit 422b and the third slit 422c are formed in the longitudinal direction of the second cleaning liquid supply part 422, and are formed to be the same as the diameter of the wafer W or longer than the diameter of the wafer W.

A third cleaning liquid container 424a is formed in the third cleaning liquid supply unit 424 to accommodate the third cleaning liquid, and to supply the third cleaning liquid to the fourth surface W24 of the second wafer W2. The fourth slit 424b is formed to be connected to the third cleaning liquid container 424a. The third cleaning liquid supply part 424 has a rod shape and is disposed in a horizontal direction. The fourth slit 424b is formed in the longitudinal direction of the third cleaning liquid supply part 424, and the fourth slit 424b is formed to be the same as the diameter of the wafer W or longer than the diameter of the wafer W.

The ultrasonic vibration unit 430 has a bar shape and is disposed below the second cleaning liquid supply unit 422. The ultrasonic vibration unit 430 is disposed in parallel with the second slit 422b and the third slit 422c, and is supplied to the second surface W12 of the first wafer W1 through the second slit 422b. Ultrasonic vibration is applied to the second cleaning liquid supplied to the third surface W23 of the second wafer W2 through the second cleaning liquid and the third slit 422c. Substantially, the same type of cleaning liquid is used for the first cleaning liquid, the second cleaning liquid and the third cleaning liquid, and may be configured to use different kinds of cleaning liquids, respectively.

As the first washing liquid, the second washing liquid and the third washing liquid, deionized water, a mixture of hydrofluoric acid (HF) and deionized water, a mixture of ammonium hydroxide (NH ₄ OH) and hydrogen peroxide (H ₂ O ₂ ) and deionized water, and ammonium fluoride ( A mixed liquid of NH ₄ F), hydrofluoric acid (HF) and deionized water, and a mixed liquid containing phosphoric acid (H ₃ PO ₄ ) and deionized water are used. Here, descriptions of the respective cleaning liquids will be omitted.

The first washing liquid supply unit 420, the second washing liquid supply unit 422, the third washing liquid supply unit 424, and the ultrasonic vibrating unit 430 are moved from the upper portion of the first wafer W1 and the second wafer W2 to the lower portion. The first driving unit 440 for movement is connected to both ends of the first cleaning solution supply unit 420, the second cleaning solution supply unit 422, the third cleaning solution supply unit 424, and the ultrasonic vibration unit 430.

The first moving block 442a and the second moving block 442b are disposed at both ends of the first cleaning liquid supply unit 420, the second cleaning liquid supply unit 422, the third cleaning liquid supply unit 424, and the ultrasonic vibration unit 430. Each of the first moving block 442a and the second moving block 442b is connected to the cleaning liquid supply line 444 and a high frequency power line 446 for generating ultrasonic vibration. The first moving block 442a and the second moving block 442b are connected to the first ball block 448a and the second ball block 448b, respectively, and the first ball block 448a and the second ball block 448b. ) Are guided by the first ball guide 450a and the second ball guide 450b, respectively. In addition, the first ball block 448a and the second ball block 448b are vertically moved by the rotation of the first ball screw (not shown) and the second ball screw (not shown), respectively. The first ball screw and the second ball screw are connected to the first motor 452a and the second motor 452b, respectively. Since the first driver 440 is the same as the first driver 240 of the wafer processing apparatus 200 according to the first embodiment, a detailed description thereof will be omitted.

When the patterns are formed on the second surface W12 of the first wafer W1 and the third surface W23 of the second wafer W2 adjacent to the ultrasonic vibration unit 430, the ultrasonic vibration patterns It is applied directly to the second cleaning liquid in contact with. This is the case when there is no risk of damage to the patterns by ultrasonic vibration. That is, when there is no risk that the patterns are damaged by the ultrasonic vibration, the ultrasonic vibration may be directly applied to improve the cleaning efficiency.

On the contrary, when the pattern is not formed on the second surface W12 of the first wafer W1 and the third surface W23 of the second wafer W2, the ultrasonic vibration is performed by the first wafer W1 and the first wafer W1. Indirectly applied to the first and second cleaning liquids supplied through the second wafer W2 to the first surface W11 of the first wafer W1 and the fourth surface W24 of the second wafer W2, respectively. do. This is the case when there is a risk of damage to the patterns by ultrasonic vibration.

The first washing liquid supply unit 420, the second washing liquid supply unit 422, and the third washing liquid supply unit 424, which are moved up and down by the first driving unit 440, may include the entirety of the first wafer W1 and the second wafer W2. The cleaning liquid can be uniformly provided on the surface. The ultrasonic vibration unit 430 directly and indirectly applies ultrasonic vibration to the cleaning liquid that contacts the surfaces of the first wafer W1 and the second wafer W2. Therefore, the cleaning efficiency of the wafer W is improved. In addition, since the two wafers (W) are processed simultaneously, the time required for the wafer (W) cleaning process is reduced, and the contact area between the ultrasonic vibration unit 430 and the second cleaning liquid is increased, thereby improving the application efficiency of the ultrasonic vibrations. do.

Meanwhile, in the wafer processing apparatus 400 according to the third embodiment, a fifth slit 460b for supplying a first dry gas to the first surface W11 of the first wafer W1 is formed in a horizontal direction. For supplying the second dry gas to the first dry gas supply unit 460 and the second surface W12 of the first wafer W1 and the third surface W23 of the second wafer W2 facing each other, respectively. The third dry gas is supplied to the second dry gas supply unit 462 in which the sixth slit 462b and the seventh slit 462c are formed in the horizontal direction, and the fourth surface W24 of the second wafer W2. The eighth slit 464b for supplying is provided with the 3rd dry gas supply part 464 formed in the horizontal direction, The 1st dry gas supply part 460, the 2nd dry gas supply part 462, and 3rd dry gas The second driving part 470 is provided to move the supply part 464 from the upper side to the lower side of the first wafer W1 and the second wafer W2.

The first dry gas supply unit 460a is connected to the fifth slit 460b in the first dry gas supply unit 460, and the sixth slit 462b is formed in the second dry gas supply unit 462. ) And a second dry gas accommodating part 462a connected to the seventh slit 462c, and a third dry gas accommodating part connected to the eighth slit 464b inside the third dry gas supply part 464. The part 464a is formed.

Isopropyl alcohol vapor, heated nitrogen gas, a mixed gas of isopropyl alcohol vapor and heated nitrogen gas may be used as the first dry gas, the second dry gas, and the third dry gas. Substantially, the first dry gas, the second dry gas, and the third dry gas are the same kind of dry gases, and may be configured to use different dry gases. Since the detailed drying principle is the same as the drying principle of the wafer cleaning apparatus 200 according to the first embodiment, a detailed description thereof will be omitted.

The second driving unit 470 is a third moving block 472a and a fourth movement connected to both ends of the first dry gas supply unit 460, the second dry gas supply unit 462, and the third dry gas supply unit 464. Block 472b. The dry gas supply line 474 is connected to the third moving block 472a and the fourth moving block 472b. The third moving block 472a and the fourth moving block 472b are connected to the third ball block 476a and the fourth ball block 476b, respectively, and the third ball block 476a and the fourth ball block 476b. ) Are guided by the third ball guide 478a and the fourth ball guide 478b, respectively. In addition, the third ball block 476a and the fourth ball block 476b are vertically moved by the rotation of the third ball screw (not shown) and the fourth ball screw (not shown), respectively. The third ball screw and the fourth ball screw are connected to the third motor 480a and the third motor 480b, respectively. Since the second driver 470 is the same as the second driver 270 of the wafer processing apparatus 200 according to the first embodiment, detailed description thereof will be omitted.

Since the wafer processing apparatus 400 according to the third embodiment performs a cleaning and drying process for two wafers W at the same time, the time required for the cleaning and drying process of the wafer W can be shortened.

In addition, in the third embodiment, a wafer processing apparatus capable of simultaneously processing two wafers is described. However, when a plurality of second cleaning solution supply units are provided and the lengths of the heads of the support unit are extended, the plurality of wafers may be simultaneously processed. can do. That is, the idea of the present invention described in the third embodiment means that a wafer cleaning apparatus capable of simultaneously processing a plurality of wafers is included.

FIG. 17 is a schematic configuration diagram for explaining an apparatus having the wafer processing apparatus shown in FIG. 14.

Referring to FIG. 17, the illustrated apparatus 500 includes a wafer stage 520 for supporting a wafer cassette 510 for accommodating a plurality of wafers W, and a wafer processor 530 for processing wafers W. As shown in FIG. And a wafer processing unit by selecting two wafers W from a plurality of wafers W stored in the wafer cassette 510, and rotating them in a vertical direction so that the selected two wafers W face each other. And a transfer robot 540 for transferring the two wafers W processed by the wafer processing unit 530 to the wafer cassette 510.

The wafer stage 520 is configured to allow a plurality of wafer cassettes 510 to be placed, and a plurality of wafer processing units 530 are installed in the plurality of wafer processing chambers 550, respectively. Since the wafer processing unit 530 is the same as the wafer processing apparatus 400 shown in FIG. 14, detailed description thereof will be omitted. The transfer robot 540 is installed to move between the plurality of wafer cassettes 510 and the plurality of wafer processing chambers 550.

The transfer robot 540 is a multi-joint robot capable of transferring two wafers W, and absorbs the wafers W by vacuum. The transfer robot 540 includes two vacuum chucks and two articulated robot arms for transferring two wafers W. The transfer robot 540 unloads two wafers W from the wafer cassette 510 and loads them into the wafer processing unit 530 of the wafer processing chamber 550. At this time, the transfer robot 540 may simultaneously transfer two wafers W to the wafer processing unit 530, or may transfer one sheet at a time.

In detail, the transfer robot 540 sequentially unloads two wafers W from the wafer cassette 510. Subsequently, the two wafers W unloaded from the wafer cassette 510 may be rotated in the vertical direction to face each other, and the two wafers W may be simultaneously transferred to the support of the wafer processing unit 530.

On the other hand, in the case of sequentially loading the two wafers W unloaded from the wafer cassette 510 into the wafer processing unit 530, the support of the wafer processing unit 530 is for holding each wafer W separately. It has a plurality of heads and rods. In FIG. 14, a support for simultaneously holding two wafers W is illustrated, but a support may be configured to hold two wafers W, respectively.

As described above, the two wafers W loaded into the wafer processing unit 530 are cleaned and dried by the wafer processing unit 530. When the processing by the wafer processing unit 530 is completed, the transfer robot 540 transfers two wafers W to the wafer cassette 510.

Here, the wafer processing unit is not limited to processing two wafers. That is, the support portion of the wafer processing portion and the cleaning liquid supply portion may be configured to simultaneously process two or more wafers.

According to the present invention as described above, the cleaning liquid supply unit supplies the cleaning liquid through the slits formed in the horizontal direction on the surface of the two wafers while moving from the top to the bottom of the two wafers supported in the vertical direction. The ultrasonic vibration unit moves with the cleaning liquid supply unit and applies ultrasonic vibration to the cleaning liquids supplied to two opposite surfaces of the surfaces of the wafer. Therefore, the cleaning liquid is uniformly supplied to the surfaces of the wafers, and uniform ultrasonic vibration is directly and indirectly supplied to the cleaning liquids supplied to the surfaces of the wafers. Accordingly, the cleaning efficiency of the wafers is improved, and the application efficiency of the ultrasonic vibration is improved. In addition, since two wafers are cleaned simultaneously, the time required for cleaning is shortened.

The wafer drying unit supplies the dry gas to the surfaces of the wafers through the slits formed in the horizontal direction while moving from the top of the two wafers supported in the vertical direction to the bottom. Thus, dry gas is uniformly supplied to the surfaces of the wafers. In addition, since the wafer is supported in the vertical direction, the drying efficiency of the wafer is improved, and the risk of breakage of the fine pattern generated in the conventional drying method of the high speed rotation method is eliminated. In addition, since the two wafers are dried at the same time, the time required for drying is shortened.

In addition, in the embodiment of the present invention has been described in detail based on two wafers, it has been described that the processing of two or more wafers is possible. That is, since the number of wafers can be configured to be processed at the same time, the number of simultaneous wafers can be increased. Therefore, the processing time of the wafer can be further shortened.

Although described above with reference to a preferred embodiment of the present invention, those skilled in the art will be variously modified and changed within the scope of the invention without departing from the spirit and scope of the invention described in the claims below I can understand that you can.

Claims (24)

Holding means for holding a peripheral portion of the wafer and supporting the wafer in a vertical direction; And And a first slit for supplying a cleaning liquid to a surface of the wafer supported in a vertical direction in a horizontal direction, the cleaning apparatus including cleaning means for moving from the top to the bottom of the wafer. The method of claim 1, wherein the cleaning means, A cleaning liquid supply unit having the first slit; An ultrasonic vibration unit provided below the cleaning liquid supply unit so as to be adjacent to the surface of the wafer supported in the vertical direction, and configured to apply ultrasonic vibration to the cleaning liquid supplied to the surface of the wafer; And And a driving part for vertically moving the cleaning liquid supply part and the ultrasonic vibration part. The wafer processing apparatus of claim 2, wherein the ultrasonic vibration unit has a bar shape and is disposed in parallel with the first slit. The method of claim 1, wherein the second slit for supplying a dry gas to the surface of the wafer supported in the vertical direction is formed in a horizontal direction, characterized in that it further comprises a drying means for moving from the top to the bottom of the wafer Wafer processing apparatus. The wafer processing apparatus of claim 4, wherein lengths of the first slit and the second slit correspond to a diameter of the wafer. The method of claim 1, wherein the second slit for supplying a first dry gas to the surface of the wafer supported in the vertical direction is formed in the horizontal direction, the third for supplying a second dry gas to the surface of the wafer A slit is formed in the horizontal direction on the upper portion of the second slit, and further comprising a drying means for moving from the top to the bottom of the wafer. 7. The wafer processing apparatus of claim 6, wherein the first dry gas comprises isopropyl alcohol and the second dry gas comprises heated nitrogen gas. Holding means for holding a peripheral portion of the wafer and supporting the wafer in a vertical direction; A first cleaning liquid supply unit having a first slit for supplying a first cleaning liquid to a first surface of the wafer supported in a vertical direction in a horizontal direction; A second cleaning liquid supply unit in which a second slit for supplying a second cleaning liquid to a second surface opposite to the first surface of the wafer supported in a vertical direction is formed in a horizontal direction; An ultrasonic vibration unit for applying ultrasonic vibration to the first cleaning liquid or the second cleaning liquid which is supplied from one selected from the first cleaning liquid supply unit and the second cleaning liquid supply unit and is in contact with the wafer; And And a first driving part for moving the first cleaning liquid supply part, the second cleaning liquid supply part, and the ultrasonic vibration part from the upper part to the lower part of the wafer. The method of claim 8, wherein the support means, First support portions for supporting respective peripheral portions of both sides of the wafer; And A second support for supporting the upper and lower peripheral portions of the wafer, respectively, The wafer is supported by the first support part while the first cleaning liquid supply part, the second cleaning liquid supply part and the ultrasonic vibration part pass through the upper and lower parts of the wafer, and the first cleaning liquid supply part and the second cleaning liquid supply part And the wafer is supported by the second support while the ultrasonic vibrator passes through the center portion of the wafer. The method of claim 9, wherein the first support portion, A plurality of first rods; And A plurality of first heads respectively provided at ends of the first rods, the first heads being in close contact with both peripheral portions of the wafer, The second support portion, A plurality of second rods; And And a plurality of second heads respectively provided at ends of the second rods and in close contact with upper and lower peripheral portions of the wafer. The wafer processing apparatus of claim 10, wherein the first heads and the second heads each have a rod shape, and are in close contact with a peripheral portion of the wafer by rotation. The semiconductor device of claim 11, further comprising: a second driving part for moving the first support part in a direction parallel to a horizontal line perpendicular to the first or second surface of the wafer; A third driving part for respectively rotating the first heads such that the first heads are in close contact with both peripheral portions of the wafer; A fourth driving part for moving the second supporting part in a direction parallel to the horizontal line; And And a fifth driver for rotating the second heads so that the second heads are in close contact with the upper and lower peripheral portions of the wafer, respectively. The semiconductor device of claim 10, further comprising: a second driving part for moving the first support part in a direction parallel to a first horizontal line orthogonal to the first or second surface of the wafer; A third driving part for moving the first heads in a direction parallel to a second horizontal line parallel to the first or second surface of the wafer such that the first heads are in close contact with both peripheral portions of the wafer; A fourth driving part for moving the second supporting part in a direction parallel to the first horizontal line; And And a fifth driving part for moving the second heads in the vertical direction such that the second heads closely contact the upper and lower peripheral portions of the wafer, respectively. The apparatus of claim 8, further comprising: a first dry gas supply unit in which a third slit for supplying a first dry gas to a first surface of the wafer supported in a vertical direction is formed in a horizontal direction; A second dry gas supply unit in which a fourth slit for supplying a second dry gas to a second surface of the wafer supported in a vertical direction is formed in a horizontal direction; And And a second driver for moving the first dry gas supply unit and the second dry gas supply unit from the top to the bottom of the wafer. The first wafer and the second wafer face each other such that a first wafer having a first surface and a second surface opposite to the first surface and a second wafer having a third surface and a fourth surface opposite to the third surface face each other. Holding means for holding a peripheral portion of the first wafer and the second wafer in a vertical direction; A first cleaning liquid supply unit in which a first slit for supplying a first cleaning liquid to a first surface of the first wafer is formed in a horizontal direction; A second cleaning liquid supply unit having a second slit and a third slit for supplying a second cleaning liquid to a second surface of the first wafer and a third surface of the second wafer facing each other, respectively; A third cleaning liquid supply unit having a fourth slit for supplying a third cleaning liquid to the fourth surface of the second wafer in a horizontal direction; An ultrasonic vibration unit for applying ultrasonic vibration to the second cleaning liquid that is in contact with the second surface of the first wafer and the third surface of the second wafer, respectively; And And a first driving part for moving the first cleaning liquid supply part, the second cleaning liquid supply part, the third cleaning liquid supply part, and the ultrasonic vibration part from the upper part to the lower part of the first wafer and the second wafer. Device. The wafer processing apparatus according to claim 15, wherein an electrical pattern is formed on the second surface of the first wafer and the third surface of the second wafer, respectively. The wafer processing apparatus according to claim 15, wherein an electrical pattern is formed on each of the first surface of the first wafer and the fourth surface of the second wafer. The method of claim 15, wherein the first cleaning amount, the second cleaning amount and the third cleaning amount, Deionized water (H ₂ O), A mixture of hydrofluoric acid (HF) and deionized water, A mixture of ammonium hydroxide (NH ₄ OH), hydrogen peroxide (H ₂ O ₂ ) and deionized water, A mixture of ammonium fluoride (NH ₄ F), hydrofluoric acid (HF) and deionized water, or Wafer processing apparatus, characterized in that the mixture containing phosphoric acid (H ₃ PO ₄ ) and deionized water. 16. The apparatus of claim 15, further comprising: a first dry gas supply unit having a fifth slit for supplying a first dry gas to a first surface of the first wafer in a horizontal direction; A second dry gas supply unit in which a sixth slit and a seventh slit for supplying a second dry gas to a second surface of the first wafer and a third surface of the second wafer facing each other are formed in a horizontal direction, respectively; ; A third dry gas supply unit having an eighth slit for supplying a third dry gas to a fourth surface of the second wafer in a horizontal direction; And And a second driving part for moving the first dry gas supply part, the second dry gas supply part, and the third dry gas supply part from the upper part to the lower part of the first wafer and the second wafer. Device. 20. The wafer processing apparatus of claim 19, wherein the first dry gas and the second dry gas are isopropyl alcohol (IPA) vapor, nitrogen gas, or a mixed gas of isopropyl alcohol vapor and nitrogen gas. A wafer stage for supporting a wafer cassette containing a plurality of wafers; A wafer processor for processing the wafers; And Two wafers are selected from the plurality of wafers stored in the wafer cassette, and each of the two wafers is rotated in a vertical direction to face each other, and is transferred to the wafer processing unit. A transfer robot for transferring a sheet of wafer to the wafer cassette, The wafer processing unit may include a first wafer having a first surface selected by the transfer robot and transferred to the wafer processing unit and a second surface opposite to the first surface, and a fourth surface opposite to the third surface and the third surface. Holding means for holding a peripheral portion of the second wafer having the first wafer and the second wafer in a vertical direction; A first cleaning liquid supply unit having a first slit for supplying a first cleaning liquid to a first surface of the first wafer in a horizontal direction; A second cleaning liquid supply unit having a second slit and a third slit for supplying a second cleaning liquid to a second surface of the first wafer and a third surface of the second wafer facing each other, respectively, in a horizontal direction; A third cleaning liquid supply part having a fourth slit for supplying a third cleaning liquid to the fourth surface of the second wafer in a horizontal direction; An ultrasonic vibration unit for applying ultrasonic vibration to the second cleaning liquid which is in contact with the second surface of the first wafer and the third surface of the second wafer, respectively; And a first driving part for moving the first cleaning liquid supply part, the second cleaning liquid supply part, the third cleaning liquid supply part, and the ultrasonic vibration part from the upper part to the lower part of the first wafer and the second wafer. Device. 22. The wafer processing apparatus according to claim 21, further comprising a processing chamber containing a wafer processing portion for processing the wafer. The method of claim 21, wherein the wafer processing unit, A first dry gas supply unit in which a fifth slit for supplying a first dry gas to a first surface of the first wafer is formed in a horizontal direction; A second dry gas supply unit in which a sixth slit and a seventh slit for supplying a second dry gas to a second surface of the first wafer and a third surface of the second wafer facing each other are formed in a horizontal direction, respectively; ; A third dry gas supply unit having an eighth slit for supplying a third dry gas to a fourth surface of the second wafer in a horizontal direction; And And a second driving part for moving the first dry gas supply part, the second dry gas supply part, and the third dry gas supply part from the upper part to the lower part of the first wafer and the second wafer. Device. The wafer processing apparatus according to claim 21, wherein the transfer robot simultaneously loads the two wafers into the wafer processing unit and unloads them from the wafer processing unit at the same time.