KR20030094904A - Window of semiconductor product device - Google Patents

Abstract

PURPOSE: A window of a semiconductor manufacturing equipment is provided to be capable of preventing the etching phenomenon generated at the window by forming the window using ceramic or industrial diamond. CONSTITUTION: A rectangular type hole is formed at the predetermined portion of a chamber body part(10). A frame(12) is inserted into the hole of the chamber body part. At this time, the frame is fixed to the chamber body part by using a screw(24). The first O-ring(22) is inserted in the frame. The first O-ring is used for preventing the leak generated between the hole of the chamber body part and the frame. The second O-ring(14) is inserted into a window(16). At this time, the window is made of predetermined material. Preferably, ceramic is used as the predetermined material. Preferably, an industrial diamond is capable of being used as the predetermined material.

Description

Window of Semiconductor Manufacturing Equipment {WINDOW OF SEMICONDUCTOR PRODUCT DEVICE}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a see-through window of a semiconductor manufacturing facility, and more particularly, to a see-through window of a semiconductor manufacturing facility that prevents leaks by preventing surfaces from being etched when using a plasma in the semiconductor manufacturing facility.

Typically in semiconductor substrate manufacturing processes, semiconductor, dielectric, and conductor materials such as polysilicon, silicon dioxide, and aluminum layers are deposited on the substrate and etched to form patterns of gates, vias, contact holes, or interconnect lines. do. The layers are typically formed by chemical vapor deposition (CVD), physical vapor deposition, or oxidation and nitriding processes. For example, in a CVD process, the reactive gas is decomposed to deposit a material layer on the substrate and in the PVD process the target is sputtered to deposit the material on the substrate. In the oxidation and nitriding process, the oxide layer or nitride layer is typically formed with a silicon dioxide layer or silicon nitride layer on the substrate. In the etching process, a patterned mask layer or a hard mask of photoresist is formed on the substrate by a photolithographic method so that the exposed portion of the substrate is etched by an activated gas such as Cl 2, HBr or BCl 3.

In such a process, it is required to stop the processing of the substrate at a predetermined stage. For example, it is difficult to stop the etching process after etching only a thin layer of the substrate in a conventional etching process. As an example, in etching a gate structure, it is desirable to etch the remaining thickness of the lower gate oxide layer as close to the predetermined and acceptable value as possible, so that the etching process does not damage any underlying polysilicon. The gate oxide layer becomes thinner and thicker in the fabrication of high-speed integrated circuits, making it difficult to accurately etch the upper polysilicon layer without over etching to the lower gate oxide layer. As another example, it is desirable to form a layer having a controlled and predetermined thickness in the deposition, oxidation, and nitriding processes, and to stop the process precisely once a layer of desired thickness is obtained.

However, the thickness of the material layer to be etched on the wafer is not always constant throughout the wafer due to the step, etc., and the etching is not even evenly over the entire surface of the wafer. Therefore, sufficient time must be devoted to the process to fully etch the desired material layer at the desired portion.

Therefore, in the semiconductor etching process, in addition to the process for a certain time, plasma etching is used a lot of methods to find the specific time point of the process to change the etching conditions. That is, before the specific point in time, the process may be selected by selecting a condition for increasing the etching rate, and after the point in time, the process may be performed by selecting a condition having a high selectivity with the lower layer even though the etching rate is slow.

In this case, the specific time point of the process refers to a time point at which the film quality of the lower portion of the material layer to be etched is revealed, and finding this time point is called end point detection (EPD). The process before this time is called Main Etch, and the process after this time is called Over Etch.

The EPD method plays an important role in the etching method divided into these steps. There are many methods of EPD, but there are many ways to measure the emission from plasma in the process chamber using a monochromator and to find out if the wavelength inherent to a specific material is detected as a peak if possible. Used. END POINT DETECTION methods are used to measure the endpoints of an etch, deposition, oxidation or nitriding process. Endpoint measurement methods can be performed by analyzing the emission spectrum of plasma formed in the chamber by determining the change in chemical composition corresponding to the composition change of the layer being etched, for example, as indicated in US Pat. No. 4,328,068, which is incorporated herein by reference. Plasma emission analysis. As another example, as another example referred to herein, US Pat. No. 5,362,256 monitors plasma emission intensity at selected wavelengths and displays remaining film thickness, etch ratio, etch uniformity, and variation in etch endpoint and plasma emission intensity. A method of monitoring an etching or deposition process in connection with the present invention is disclosed.

Ellipsometry is used as another endpoint detection system useful for measuring process endpoints before the processing of the entire layer is completed. In this method, the polarization beam is reflected at the surface of the layer being etched and analyzed by measuring the phase shift and change in the magnitude of the reflected light that occurs as the layer is etched, which is described in U. S. Patents 3,974, 797 and 3,824,017. A polarizing filter is used to measure the phase change of the polarizing beam reflected at the surface of the substrate.

Another endpoint detection method is interferometry. An exemplary method is disclosed in US Pat. No. 4,618,262 to Maydan et al., Which is incorporated herein by reference, and discloses a laser interferometer for directing a laser beam onto a layer to be processed on a substrate. The laser and associated monitoring system provide a reflectance curve measured according to the layer being processed. The computer calculates whether the preselected etch depth is reached by calculating the maximum or minimum number of reflectance signals or by recognizing the end of the etch process based on the cessation of the signal.

A process chamber in which such an etching process is performed is shown in FIG. 1. Referring to FIG. 1, a chamber wall 2 constituting a side wall of a process chamber is installed inside a chamber body 1, and a chamber wall 2 is formed during process progress. In order to protect the chamber wall 2 from deposition of by-products, a deposition shield ring 3 having a constant replacement period is coupled, and an inner insulator ring and focus ring, not shown, are provided inside the deposition shield ring 3. Etc. are installed.

The chamber wall 2 and the deposition barrier ring 3 each have a wall window 2a and an endpoint window made of a transmissive material, such as quartz, for monitoring the light of a unique wavelength emitted from the plasma. end point windows 3a) are mounted respectively. The end point window 3a is fixed with a pair of screws S up and down in the mounting hole 3b formed on the side of the deposition blocking ring 3.

The endpoint window 3a of the conventional process chamber as described above is made of a quartz material, so that the whole inner surface of the portion where the O-ring abuts is etched due to exposure to the plasma due to continuous use for a long time.

Therefore, an object of the present invention is to manufacture a viewing window for monitoring the light emitted from the plasma in the etching equipment for semiconductor manufacturing in order to solve the above problems made of ceramic or industrial diamond so that the etching window of the semiconductor manufacturing equipment is not etched. In providing.

Another object of the present invention is to provide a see-through window of a semiconductor manufacturing facility that is made of a material that is not etched by the plasma to prevent chamber leakage.

1 is a perspective view of a process chamber in which a general etching process is performed

2 is a perspective view of a viewing window of a semiconductor manufacturing apparatus according to an embodiment of the present invention

3 is a front view of a see-through window of a semiconductor manufacturing apparatus according to an embodiment of the present invention.

Explanation of symbols on the main parts of the drawings

10: chamber body 12: frame

14, 22: O-Ring 16: Viewing Window

18: cover plate 20, 28: rectangular hole

24, 26: screw

To achieve the above object is characterized in that the see-through window installed in the main body of the process chamber of the present invention is formed of a ceramic or industrial diamond material that is not etched.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description of the present invention, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted.

2 is a perspective view of a viewing window of a semiconductor manufacturing apparatus according to an embodiment of the present invention.

A chamber body 10 having a rectangular hole formed at an external predetermined position, a frame 12 mounted in a rectangular hole of the chamber body 10, and having a rectangular hole 28 formed therein, and the frame 12. Mounted on a rectangular hole 28 formed in the rectangular hole 28, a viewing window 16 for monitoring light having a unique wavelength emitted from the plasma in the chamber, and an o-ring for preventing leakage due to being fitted around the inside of the viewing window 16. 14 and a rectangular plate 20 having a size of the viewing window 16 is formed of a cover plate 18 for fixing the viewing window 16 to the chamber body 10 through the frame 12. It is.

3 is a front view of a viewing window of a semiconductor manufacturing apparatus according to an embodiment of the present invention.

2 and 3 will be described in detail the operation of the preferred embodiment of the present invention.

Rectangular holes are formed at predetermined positions of the chamber body 10. The frame 12 is inserted into a rectangular hole of the chamber body 10 and is fastened and fixed to the chamber body 10 by a screw 24. At this time, the O-ring 22 is inserted into the frame 12, which prevents the leakage between the rectangular hole of the chamber body 10 and the frame 12. Then, the O-ring 14 is inserted into the inner circumference of the see-through window 16, and the portion where the o-ring 14 is fitted into the see-through window 16 is fitted into the rectangular hole 28 formed in the frame 12. In this case, the o-ring 14 prevents leakage between the frame 12 and the viewing window 16. The cover plate 18 then covers the see-through window 16 and then fastens the see-through window 106 to the frame 12 by fastening a plurality of screws 26 as shown in FIG. 3. Here, the viewing window 16 is made of ceramic or industrial diamond which is not etched by plasma and used. Therefore, the sight glass 16 is not etched by the plasma in the chamber to prevent the leakage.

As described above, the present invention uses a viewing window for monitoring light having a unique wavelength emitted from the plasma in the chamber in an etching facility for manufacturing a semiconductor, using ceramic or industrial diamond, so that fine leakage occurs in the chamber because it is not etched by plasma. There is an advantage that can be prevented.

Claims (3)

In the viewing window of the semiconductor manufacturing equipment, A viewing window for semiconductor manufacturing equipment, characterized in that the material of the see-through window installed in the main body of the process chamber is formed of a non-etched material. The method of claim 1, The viewing window of the semiconductor manufacturing equipment, characterized in that the material of the viewing window is ceramic. The method of claim 1, The viewing window of the semiconductor manufacturing equipment, characterized in that the material of the industrial diamond.