KR20030062156A - Lcd panel with storage capacity and process of same - Google Patents

Abstract

PURPOSE: A liquid crystal display panel having a storage capacity capacitor and a process for manufacturing the same are provided to increase an aperture ratio by maintaining a storage capacity even if an area for having the storage capacity is reduced, and to simplify manufacturing process. CONSTITUTION: A first semiconductor layer(2) has a first oxide film(3) on an oxidized surface. A second semiconductor layer is divided into a gate electrode(4) having a gate wire and a capacity electrode(5) not having a gate wire, and has an oxide film(9') on an oxidized surface of the capacity electrode. A transparent substrate(1) includes a plurality of thin film transistors formed of black matrices deposited on an upper electrode. A first insulating layer(6) is deposited on the transparent substrate. A source electrode(7) is formed on the first insulating film, contacting with a source area of the first semiconductor layer, and is connected with data lines. A second insulating layer(11) is formed on the first insulating layer. A drain electrode(8) is formed on the second insulating layer, contacting with a drain area of the first semiconductor layer and the black matrices, and contacts with a pixel electrode.

Description

LCD PANEL WITH STORAGE CAPACITY AND PROCESS OF SAME

The present invention relates to a liquid crystal display panel and a manufacturing process thereof. In particular, the liquid crystal display panel for improving the aperture ratio by reducing the area occupied by the storage capacitor electrode closely related to the aperture ratio can be reproduced. The manufacturing process of a liquid crystal display panel.

In general, modern people are more inclined to enjoy leisure or recreation, and the tendency to watch movies and other images in their free space is increasing, and the screen or screens of video display devices are gradually enlarged according to such tendencies. It is being done.

Projection systems such as data projectors, projection TVs, and projection monitors using projection technologies, in which the concept of a projector has been introduced, are being used in recent years.

Such a projection system is classified into the characteristics of an optical projection engine. The projection system is classified into a transmissive type and a reflective type. Projection systems using a transmissive optical projection engine are mainly used for low cost, and projection systems using a reflective optical projection engine are mainly used. It is often used for high price.

The reason for this is due to the aperture ratio, which is about 85% for the reflective type, but only 50 to 60% for the transmissive type. The aperture ratio refers to the ratio of open windows through which light can be transmitted or reflected relative to the total liquid crystal display area, and is a parameter that has a close influence on color reproduction and resolution.

In addition, in the case of a projection system using a transmission type optical projection engine, the aperture ratio is a very important factor because it has a direct correlation with the transmittance of light.

On the other hand, in the case of using a transmission optical projection engine, since the formation of the projected image is simple, if the aperture ratio can be increased in the design of the transmission optical projection engine, it is not necessary to use a reflective reflection projection system having a complicated structure and increase the demand. Could be.

In this case, a direct cause of the reduction of the aperture ratio is that the space for forming the storage capacitance is required when the liquid crystal display is implemented, which will be described with reference to FIG. 1 attached to the related art for maintaining the storage capacitance.

1 is a diagram illustrating a partial cross-sectional configuration of a conventional liquid crystal display panel, in which reference numeral 1 denotes a substrate, reference numeral 2 denotes a first polysilicon layer formed in a predetermined region on the substrate 1, and the first poly The silicon layer 2 is covered by a thermal oxide film referred to by reference numeral 3.

Further, a gate electrode 4 having a gate wiring formed in a predetermined pattern in the upper region of the first polysilicon layer 2 covered with the thermal oxide film 3 and the gate electrode 4 are not formed. The second polysilicon layer 5 used as the storage capacitor upper electrode formed in a predetermined pattern on the upper region of the first polysilicon layer 2 and the front surface of the transparent insulating substrate 1 are coated with a predetermined thickness. It consists of an insulating film 6 and source / drain electrodes 7 and 8 formed around the gate electrode 4 to act as a transistor together with the gate electrode 4.

The structure of the conventional liquid crystal display panel described above is a method of forming a storage capacity in a high temperature polysilicon process, and thermally oxidizes a silicon layer for storage capacity during the patterning of the silicon layer, followed by ion implantation to electrically connect one electrode portion of the thin film transistor. It forms a low-resistance silicon layer that connects, which serves as one electrode of the storage capacitor.

Subsequently, when forming the polysilicon for the gate electrode, the upper electrode of the storage capacitor is formed of polysilicon, and a storage capacitor is formed between the upper electrode and the ion implanted silicon layer below.

However, as can be seen in the configuration as described above, the aperture ratio is the region of the thin film transistor of the portions referred to by the reference numerals 4, 7 and 8 and the region that blocks light, such as the region provided with the reference numeral 5 and the liquid crystal display When defined as the ratio of the light passing area in the panel, it can be seen that the aperture ratio is limited to about 50%.

Therefore, a problem arises in that the light transmittance is lowered due to the low aperture ratio.

Therefore, the object of the present invention was created to solve the problems of the prior art, the object of the present invention to solve the problem is to reproduce the storage capacity of an appropriate level, the opening ratio is improved and the process is simple It is to provide a liquid crystal display panel.

In addition, another object of the present invention is to provide a liquid crystal display panel manufacturing process that can reproduce the storage capacity of an appropriate level, the aperture ratio is improved and the process is simple.

1 is an exemplary cross-sectional view of a conventional liquid crystal display panel.

2 to 6 are views showing a manufacturing process of a liquid crystal display panel having a storage capacitor according to the present invention.

7A and 7B are equivalent circuit diagrams of a storage capacitor of a liquid crystal display panel having a storage capacitor according to the present invention.

8 is another embodiment of a liquid crystal display panel having a storage capacitor according to the present invention.

Liquid crystal display panel having a storage capacitor according to the present invention for achieving the above object, the liquid crystal having a storage capacitor that displays by transmitting or blocking the light by changing the arrangement of the liquid crystal material using a change in the electric field In the display panel,

A first semiconductor layer whose surface is oxidized to form an oxide film; The second semiconductor layer is divided into a gate electrode having a gate wiring deposited and patterned on the first semiconductor layer and a capacitor electrode having no gate wiring, and an oxide film is formed by oxidizing the surfaces of the gate electrode and the capacitor electrode. ; And a transparent substrate having a plurality of thin film transistors composed of black matrices deposited on top of an oxidized upper electrode formed in a predetermined region in a matrix form.

A first insulating layer deposited on the transparent substrate; A source electrode formed on the first insulating layer in contact with the source region of the first semiconductor layer and connected to the data line; A second insulating layer formed on the first insulating layer on which the source electrode is formed; And a drain electrode formed on the second insulating layer in contact with the drain region of the first semiconductor layer and the black matrix and in contact with the pixel electrode.

In addition, a first semiconductor layer formed in a predetermined region on the transparent insulating substrate and the surface is oxidized to form a thermal oxide film; A second semiconductor layer formed in a predetermined region on the transparent insulating substrate and formed in a region in which the first semiconductor layer is not formed and whose surface is oxidized to form an oxide film; A gate electrode deposited on the first semiconductor layer, patterned, and oxidized to form an oxide film; A black matrix deposited and patterned on top of the second semiconductor layer; A first insulating layer deposited on the transparent substrate; A source electrode formed on the first insulating layer in contact with the source region of the first semiconductor layer and connected to the data line; A second insulating layer formed on the first insulating layer on which the source electrode is formed; And a drain electrode formed on the second insulating layer in contact with the drain region of the first semiconductor layer and the black matrix and in contact with the pixel electrode.

In addition, the liquid crystal display panel manufacturing process having a storage capacitor according to the present invention for achieving another object of the present invention,

In the manufacturing process of a liquid crystal display panel having a storage capacitor that changes the arrangement of the liquid crystal material by using a change in the electric field to transmit or block light to display the

Forming a first semiconductor layer on the transparent insulating substrate and oxidizing a surface of the first semiconductor layer; Implanting impurities into the first semiconductor layer; Forming and patterning a second semiconductor layer on the first semiconductor layer to form a gate electrode and a capacitor electrode, oxidizing surfaces of the gate electrode and the capacitor electrode and implanting impurities; Forming a black matrix on top of the capacitor electrode; Depositing a first insulating layer on the transparent insulating substrate and planarizing the surface; Forming a source electrode connected to the data line; Depositing a second insulating layer on top of the first insulating film and planarizing the surface; And forming a drain electrode on the first semiconductor layer and the black matrix from an upper portion of the second insulating layer to contact the pixel electrode.

Forming and patterning a first semiconductor layer and a second semiconductor layer on the transparent insulating substrate, and oxidizing a surface of the first semiconductor layer and the second semiconductor layer; Forming a gate electrode on top of the first semiconductor layer and oxidizing a surface of the gate; Ion implanting impurity phosphorus on the transparent substrate; Forming a black matrix on the second semiconductor layer; Depositing a first insulating film on the transparent insulating substrate and planarizing the surface; Forming a source electrode connected to the data line; Depositing a second insulating film on top of the first insulating film and planarizing the surface; And forming a drain electrode on the first semiconductor layer and the black matrix from an upper portion of the second insulating layer so as to contact the pixel electrode.

The above object and various advantages of the present invention will become more apparent from the preferred embodiments of the present invention described below with reference to the accompanying drawings by those skilled in the art.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 to 6 are cross-sectional views showing a manufacturing process of a liquid crystal display panel having a storage capacitor according to the present invention. First, as shown in FIG. 2, the first polysilicon layer 2 and the first polysilicon layer 2 formed in a predetermined region on the transparent substrate 1, such as glass or quartz, are thermally oxidized. The thermal oxide film 3 is formed on the surface of the polysilicon layer 2 and ions are implanted. As shown in FIG. 3, the second polysilicon layer is deposited on the first polysilicon layer 2 on which the thermal oxide film 3 is formed, patterned, and implanted into the gate electrode 4 and the capacitive electrode. (5) is formed. Then, the surface of the formed gate electrode 4 and the capacitor electrode 5 are thermally oxidized, and the first poly oxide film 9 and the second poly oxide film 9 'are formed on the surfaces of the gate electrode 4 and the capacitor electrode 5. To form. The thickness of the first poly oxide film 9 and the second poly oxide film 9 'is about 1500 kPa. Then, as illustrated in FIG. 4, the conductive layer 10 is deposited on the second poly oxide film 9 ′ of the capacitive electrode 5 by using tungsten silicide or other conductive material, and then the transparent substrate 1 is removed. The first interlayer insulating film 6 is deposited on the whole. As shown in FIG. 5, the first metal hole is formed from the upper portion of the first interlayer insulating layer 6 to the surface of the first polysilicon layer 2 to fill the source electrode 7, and then the second An interlayer insulating film 11 is formed and the surface of the second interlayer insulating film 11 is planarized. As shown in FIG. 6, the second metal hole is formed so as to reach the drain region of the thin film transistor on the surface of the second insulating film 11 and reaches the surface of the conductive layer 10. And a portion of the conductive layer 10 are exposed. Then, the transparent conductive material such as ITO is deposited and patterned on the second interlayer insulating film 11 so that the drain region and the conductive layer 10 of the semiconductor layer can be in contact with the drain electrode 8 so as to contact the source electrode 7. The signal input through the channel region and the drain electrode 8 to reach the pixel electrode to complete the lower substrate of the liquid crystal display panel. The conductive layer 10 serves as a black matrix.

In the configuration of the present invention as shown in FIG. 6 described above, the polyoxide film 9 is formed on the capacitor electrode 5 forming the storage capacitor, and then the conductive layer 10 is formed to electrically connect the double capacitor. To do it.

7A and 7B are equivalent circuit diagrams of a storage capacitor of a liquid crystal display panel having a storage capacitor according to the present invention. Referring to Figures 7a, 7b,

FIG. 7A is an equivalent circuit diagram of the storage capacitor shown in FIG. 6, and FIG. 7A may be redrawn as shown in FIG. 7B. Therefore, since the two capacitors are connected in parallel between the first polysilicon layer referred to by reference numeral 2 and the conductive layer referred to by reference numeral 10, the storage capacity corresponding to the same area is increased.

According to Equation 1, when two capacitors are connected in parallel, it can be seen that the capacity of the capacitor is proportional to the sum of the areas of the two capacitors connected in parallel. Therefore, when the capacitors are connected in parallel, it can be seen that the capacitor has a larger capacity than when there is one. Therefore, the storage capacity can be increased by connecting the capacitors in parallel without increasing the area of the capacitor, and the aperture ratio can be improved.

8 is another embodiment of a liquid crystal display panel having a storage capacitor according to the present invention. Referring to Figure 8,

As shown in FIG. 2, the first polysilicon layer 2 ′ is formed on the transparent substrate 1 and thermally oxidized to generate the thermal oxide film 3 on the first polysilicon layer 2 ′. However, it is produced in a smaller area than the first polysilicon layer 2 produced in FIG. A gate electrode is formed on the thermal oxide film 3, and the capacitor electrode 5 is formed on the transparent substrate 1. Then, the surfaces of the gate electrode 4 and the capacitor electrode 5 are thermally oxidized, so that the first poly oxide film 9 and the second poly are about 1500 kPa on the surface of the gate electrode 4 and the surface of the capacitor electrode 5. An oxide film 9 'is formed. The conductive layer 10 is formed on the second poly oxide film 9 ', the upper surface of the transparent substrate is covered with the first insulating film 6, the first metal hole is formed, and the source electrode is formed using a conductive material in the metal hole. (7) is formed. The second insulating film 11 is deposited on the first insulating film 6, and the second metal hole is formed to the upper portion of the first polysilicon layer 2 and the conductive layer 10, and the drain is formed using a conductive material. The electrode 8 is formed.

The conductive layer, the second polyoxide film 9 'and the capacitor electrode 5 are used as storage capacitors. The conductive layer acts as a black matrix.

Unlike other embodiments, the second polysilicon layer 5 is formed when the gate electrode 4 is patterned without forming the formation region of the first polysilicon layer 2 with respect to the storage region. The polysilicon layer 5 is formed directly on the substrate referred to by reference number 1.

Thereafter, a thermal oxide film 9 of about 1500 kPa is formed on the surface of the second polysilicon layer 5 through the same process as the embodiment shown in FIG. 2. Thereafter, the electrode 10 is formed of tungsten silicide or other conductive film, and the drain electrode 8 is extended to be electrically connected.

As a result, a storage capacitance exists between the polysilicon electrode and the upper electrode.

While the invention has been shown and described in connection with specific embodiments thereof, it is well known in the art that various modifications and changes can be made without departing from the spirit and scope of the invention as indicated by the claims. Anyone who owns it can easily find out.

Providing a liquid crystal display panel having a storage capacitor according to the present invention as described above can increase the storage capacity corresponding to the same area, so that the storage capacity at an appropriate level is maintained even if the area provided to have the storage capacity is reduced. Therefore, by decreasing the area of the storage capacitor, the aperture ratio, which is the rate at which light is transmitted, is increased, thereby increasing the clarity and brightness of the screen. In addition, it is possible to simplify the manufacturing process by producing a thermal oxide film without using a method of depositing an insulating layer to manufacture a liquid crystal display panel, and has an effect of blocking leakage current.

Claims (7)

In the liquid crystal display panel having a storage capacitor that displays by transmitting or blocking light by changing the arrangement of the liquid crystal material by using a change in the electric field, A first semiconductor layer whose surface is oxidized to form an oxide film; A gate electrode having a gate wiring deposited and patterned on the first semiconductor layer and a capacitor electrode having no gate wiring, and an oxide film formed by oxidizing surfaces of the gate electrode and the capacitor electrode. 2 semiconductor layers; And A transparent substrate having a plurality of thin film transistors formed of a black matrix deposited on the upper electrode where the surface is oxidized and formed in a predetermined region in the form of a matrix; A first insulating layer deposited on the transparent substrate; A source electrode formed on the first insulating layer to be in contact with the source region of the first semiconductor layer and connected to the data line; A second insulating layer formed on the first insulating layer on which the source electrode is formed; And And a drain electrode formed on the second insulating layer in contact with the drain region of the first semiconductor layer and the black matrix and in contact with the pixel electrode. The method according to any one of claims 1 to 3, The storage capacitor is a liquid crystal display panel having a storage capacitor, characterized in that the capacitor is connected in parallel. In the manufacturing process of a liquid crystal display panel having a storage capacitor that changes the arrangement of the liquid crystal material by using a change in the electric field to transmit or block light to display the Forming a first semiconductor layer on the transparent insulating substrate and oxidizing a surface of the first semiconductor layer; Implanting impurities into the first semiconductor layer; Forming a second semiconductor layer over the first semiconductor layer and patterning to form a gate electrode and a capacitor electrode, oxidizing surfaces of the gate electrode and the capacitor electrode and implanting impurities; Forming a black matrix on the capacitor electrode; Depositing a first insulating film on the transparent insulating substrate and planarizing a surface thereof; Forming a source electrode connected to the data line; Depositing a second insulating film on top of the first insulating film and planarizing a surface thereof; And forming a drain electrode on the first semiconductor layer and the black matrix from an upper portion of the second insulating layer to contact the pixel electrode. In the liquid crystal display panel having a storage capacitor that displays by transmitting or blocking light by changing the arrangement of the liquid crystal material by using a change in the electric field, A first semiconductor layer formed in a predetermined region on the transparent insulating substrate and having a surface oxidized to form a thermal oxide film; A second semiconductor layer formed in a predetermined region on the transparent insulating substrate and formed in a region in which the first semiconductor layer is not formed and whose surface is oxidized to form an oxide film; A gate electrode deposited on the first semiconductor layer, patterned, oxidized to form an oxide film, and connected with a gate wire; A black matrix deposited and patterned on the second semiconductor layer; A first insulating layer deposited on the transparent substrate; A source electrode formed on the first insulating layer to be in contact with the source region of the first semiconductor layer and connected to the data line; A second insulating layer formed on the first insulating layer on which the source electrode is formed; And And a drain electrode formed on the second insulating layer in contact with the drain region of the first semiconductor layer and the black matrix and in contact with the pixel electrode. The method according to claim 1 or 4, The black matrix is a liquid crystal display panel having a storage capacitor, characterized in that composed of tungsten silicide or other conductive film. The method according to claim 1 or 4, Wherein each of the oxide films has a thickness of about 1500 GPa. In the manufacturing process of a liquid crystal display panel having a storage capacitor that changes the arrangement of the liquid crystal material by using a change in the electric field to transmit or block light to display the Forming and patterning a first semiconductor layer and a second semiconductor layer on the transparent insulating substrate, and oxidizing a surface of the first semiconductor layer and the second semiconductor layer; Forming a gate electrode on top of the first semiconductor layer and oxidizing a surface of the gate; Implanting impurities into the transparent substrate; Forming a black matrix on the second semiconductor layer; Depositing a first insulating film on the transparent insulating substrate and planarizing a surface thereof; Forming a source electrode connected to the data line; Depositing a second insulating film on top of the first insulating film and planarizing a surface thereof; And forming a drain electrode on the first semiconductor layer and the black matrix from an upper portion of the second insulating layer to contact the pixel electrode.