KR20030056711A - Protector for preventing from contaminating the connection area of heater in the silicon single crystalline ingot growth equipment - Google Patents

Protector for preventing from contaminating the connection area of heater in the silicon single crystalline ingot growth equipment Download PDF

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KR20030056711A
KR20030056711A KR1020010086994A KR20010086994A KR20030056711A KR 20030056711 A KR20030056711 A KR 20030056711A KR 1020010086994 A KR1020010086994 A KR 1020010086994A KR 20010086994 A KR20010086994 A KR 20010086994A KR 20030056711 A KR20030056711 A KR 20030056711A
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South Korea
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heating element
silicon single
single crystal
copper electrode
contaminating
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KR1020010086994A
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Korean (ko)
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최일수
오영현
김상희
최현교
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주식회사 실트론
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Priority to KR1020010086994A priority Critical patent/KR20030056711A/en
Publication of KR20030056711A publication Critical patent/KR20030056711A/en

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: An anti-contaminating protection apparatus of a heating element connecting part installed in a silicon single crystal growing equipment is provided to be capable of preventing the contamination of a heating element support part and a copper electrode due to the deposition of oxide by using a protecting cover. CONSTITUTION: A silicon single crystal growing equipment is provided with a quartz crucible, a heating element(31) for supplying heat to the quartz crucible, a heating element support part(33) for supporting the heating element, a copper electrode(35) connected to the heating element support part for supplying current to the heating element, and an anti-contaminating protection apparatus of a heating element connecting part. The anti-contaminating protection apparatus includes a protecting cover(38) for preventing the contamination of a heating element support part and the copper electrode due to the deposition of oxide.

Description

실리콘 단결정 성장장치내의 발열체 연결부 오염방지 보호장치{Protector for preventing from contaminating the connection area of heater in the silicon single crystalline ingot growth equipment}Protector for preventing from contaminating the connection area of heater in the silicon single crystalline ingot growth equipment}

본 발명은 실리콘 단결정 성장장치내의 발열체 연결부 오염방지 보호장치에 관한 것으로, 특히 실리콘 단결정 성장장치내의 발열체 지지대와 구리전극 연결부위에 산화물 증착으로 인한 문제점을 근원적으로 제거하기 위해 산화물 오염원과 산화물이 증착되는 부위를 공간적으로 분리할 수 있는 오염방지 보호장치를 설치하여 산화물의 증착에 따른 누설전류의 발생 가능성을 없애고, 생산제품 변화로 다른 구조의 발열체로 교체시 심각한 산화물 증착으로 인해 기존의 발열체를 파손해야 하는 손실비용을 줄일 수 있도록 한 실리콘 단결정 성장장치내의 발열체 연결부 오염방지 보호장치에 관한 것이다.The present invention relates to an apparatus for preventing contamination of a heating element in a silicon single crystal growth apparatus. In particular, an oxide contaminant and an oxide are deposited to fundamentally eliminate a problem caused by oxide deposition on a heating element support and a copper electrode connection in a silicon single crystal growth apparatus. It is necessary to install a pollution prevention protection device that can separate the parts spatially to eliminate the possibility of leakage current due to the deposition of oxide, and to replace the heating element of other structure due to the change of the product, damage the existing heating element due to the serious oxide deposition. The present invention relates to an anti-pollution protection device of a heating element connection in a silicon single crystal growth apparatus to reduce the loss cost.

일반적으로, 반도체 제조에 사용되는 실리콘 웨이퍼(silicon wafer)는 덩어리상(Nugget)의 다결정 실리콘을 석영도가니에 충진하여, 이를 발열체에 의해 가열 용융하여 형성된 실리콘 용융액에 종자결정(seed crystal)을 담근 다음, 이를 회전하면서 인상시킴으로써 봉상으로 된 실리콘 단결정(Silicon single crystalline ingot)으로 성장시킨 후, 이를 원판상으로 얇게 절단하여 제조하게 된다.In general, a silicon wafer used in semiconductor manufacturing is filled with a polycrystalline silicon in a nugget in a quartz crucible, and then immersed a seed crystal in a silicon melt formed by heating and melting it by a heating element. By rotating it, it is grown by rod-like silicon single crystalline ingot, and then thinly cut into a disc to prepare it.

이러한 제조방법에 따르면, 실리콘 단결정 성장시 석영도가니와 실리콘 융액의 접촉면으로부터 용해된 산소는 약 99%가 실리콘 융액의 표면에서 증발된다. 이때 약 1%의 산소는 실리콘 단결정 잉곳(실리콘 단결정봉)으로 혼입된다.According to this manufacturing method, about 99% of oxygen dissolved from the contact surface of the quartz crucible and the silicon melt evaporates from the surface of the silicon melt during the growth of the silicon single crystal. At this time, about 1% of oxygen is mixed into the silicon single crystal ingot (silicon single crystal rod).

이 실리콘 용액으로부터 증발한 산소는 SiOx 형태의 기체상태로 성장장치의 상부에서 주입되는 불활성 기체인 Ar과 같은 경로를 통하여 실리콘 단결정 성장장치의 하부 배출구를 통하여 외부로 배출된다.Oxygen evaporated from the silicon solution is discharged to the outside through the lower outlet of the silicon single crystal growth apparatus through a path such as Ar, which is an inert gas injected from the top of the growth apparatus in the form of SiOx gas.

이때, SiOx 기체는 상대적으로 저온부인 성장장치 하부영역에서 증착반응을 통하여 산화물 형태로 성장장치내에 증착되게 된다. 또한 성장장치 하부의 기체흐름은 난류(맴돌이 흐름)를 이루게 되는데 이러한 난류 현상은 산화물 증착반응을 가속화 시키게 된다.At this time, the SiOx gas is deposited in the growth apparatus in the form of oxide through a deposition reaction in the lower region of the growth apparatus, which is a relatively low temperature portion. In addition, the gas flow in the lower part of the growth device forms turbulence (a eddy flow), which accelerates the oxide deposition reaction.

더욱이, 성장로 구조상 발열체와 구리전극의 연결부위는 성장로 내부 단열을 위한 충분한 공간이 부족함으로써 상대적으로 저온상태로 유지되어 산화물의 증착이 더 심하게 된다.In addition, the connection between the heating element and the copper electrode in the growth furnace structure is maintained at a relatively low temperature due to lack of sufficient space for internal insulation of the growth furnace, so that oxide deposition is more severe.

이와같이 산화물증착이 심하면, 종래에는 도3에 도시된 바와같이 발열체 지지대(13)와 구리전극 연결부(15)인 너트(17)의 상측으로 산화물이 쌓이게 된다. 이때 누설전류 발생방지를 위하여 물리적인 힘을 가하여 발열체(11)와 산화물이 증착된 부위(p)를 제거하여 사용하고 있었다.If the oxide deposition is severe in this manner, as shown in FIG. 3, the oxide is accumulated on the upper side of the nut 17 which is the heating element support 13 and the copper electrode connecting portion 15. At this time, by using a physical force to prevent the leakage current generation to remove the heating element 11 and the portion (p) where the oxide was deposited was used.

그러나, 이러한 물리적인 힘을 가하게 되면 발열체 연결부의 원형이 파손되어 보존이 어려웠을 뿐만 아니라, 연결부위가 산화물로 더 심화되어 단단하게 고착될 경우에는 다른 구조의 발열체로 교체시 기존의 발열체 및 발열체 지지대를 파괴하여 새 것으로 교체하여 사용해야하는 폐단이 있었다.However, when the physical force is applied, not only the circle of the heating element connection is broken, but it is difficult to preserve it.In addition, when the connection part is further strengthened with oxide and firmly fixed, the existing heating element and heating element support is replaced when it is replaced with another heating element. There was a pulpit that had to be used by destroying it and replacing it with a new one.

이는 부품 교환시에 따른 작업성의 저하와 발열체 지지대의 손실비용을 증가시켰음은 물론, 실리콘 단결정 성장장치의 운영상 누설전류 발생 가능성을 가중시키는 등 여러 문제점이 있었다.This not only increased workability and loss cost of the heating element support due to component replacement, but also increased the possibility of leakage current during operation of the silicon single crystal growth apparatus.

이와같은 산화물 증착현상은 산화물 증착원 존재, 낮은 온도, 난류 등이 주원인이 된다. 그래서 이중 산화물 증착원의 배제를 통한 주위환경과 발열체 지지대와 구리전극의 연결부위를 공간적 분리하여 산화물 증착의 원인을 제거할 수 있는 수단이 필요로 하게 되었다.Such oxide deposition is mainly caused by the presence of an oxide deposition source, low temperature, and turbulence. Therefore, there is a need for a means for removing the source of oxide deposition by spatially separating the connection between the heating environment support and the copper electrode through the exclusion of the dual oxide deposition source.

따라서, 본 발명은 상기와 같은 종래의 실리콘 단결정 성장장치내의 발열체 연결부 오염에 따른 제반문제점을 해결하기 위하여 제안된 것으로서, 발열체 지지대와 구리전극 연결부위에 산화물 증착으로 인한 오염을 방지하기 위해 산화물 오염원과 공간적으로 분리할 수 있는 오염방지장치를 구비하여 산화물 증착에 따른 누설전류 발생가능성을 없애도록 하는데 그 주된 목적이 있다.Accordingly, the present invention has been proposed to solve the problems associated with the contamination of the heating element in the conventional silicon single crystal growth apparatus as described above, in order to prevent contamination due to oxide deposition on the heating element support and the copper electrode connection portion and The main purpose of the present invention is to provide a pollution prevention device that can be spatially separated to eliminate the possibility of leakage current caused by oxide deposition.

본 발명의 다른 목적으로는, 구리전극 연결부와 연결된 발열체 지지대를 발열체로부터 자유롭게 분리케 하여 제품 종류의 변화에 의한 다른 발열체로 교환시 작업성의 향상과 파손에 따른 제품의 손실비용을 없애고자 하는데 그 목적이 있다.Another object of the present invention is to freely separate the heating element support connected to the copper electrode connection part from the heating element, thereby eliminating the loss of the product due to the improvement of workability and the damage when replacing it with another heating element by the change of the product type. There is this.

상기 목적을 달성하기 위한 본 발명은, 실리콘 단결정봉을 성장시키는 석영도가니와, 상기 석영도가니로 열을 방사하여 공급하는 발열체와, 상기 발열체를 지지하는 발열체 지지대와, 상기 발열체 지지대에 연결되어 상기 발열체에 전류를 공급하는 구리전극을 구비하는 실리콘 단결정 성장장치에 있어서; 상기 구리전극과 상기 발열체 지지대의 연결부에 산화물 증착에 따른 오염을 방지하고 그에 따른 누설전류의 발생을 배제시킬 수 있도록 보호덮개가 구비된 것을 특징한다.The present invention for achieving the above object is a quartz crucible for growing a silicon single crystal rod, a heating element for radiating and supplying heat to the quartz crucible, a heating element support for supporting the heating element, and the heating element is connected to the heating element A silicon single crystal growth apparatus having a copper electrode for supplying current to a silicon; A protective cover is provided to prevent contamination due to oxide deposition and to prevent generation of leakage current according to the connection portion between the copper electrode and the heating element support.

본 발명의 다른 특징으로는, 상기 발열체로부터 구리 전극을 공간적으로 분리 가능하게 하는 볼트가 구비된 것을 특징으로 한다.Another feature of the present invention is characterized in that a bolt is provided to enable spatial separation of the copper electrode from the heating element.

본 발명의 또 다른 특징으로는, 상기 보호덮개가 흑연 또는 용융석영유리로 형성되는 것을 특징으로 한다.As another feature of the present invention, the protective cover is characterized in that formed of graphite or molten quartz glass.

도 1은 종래의 발열체 연결부를 보인 단면도.1 is a cross-sectional view showing a conventional heating element connecting portion.

도 2는 일반적인 실리콘 단결정 성장장치를 보인 구조도.Figure 2 is a structural diagram showing a typical silicon single crystal growth apparatus.

도 3은 본 발명에 따른 발열체 연결부 오염방지 보호장치를 보인 단면도.Figure 3 is a cross-sectional view showing a heating element connection anti-fouling protection device according to the invention.

<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>

11(31):발열체 13(33):발열체 지지대11 (31): Heating element 13 (33): Heating element support

15(35):구리전극 연결부 17(37):너트15 (35): Copper electrode connector 17 (37): Nut

30:발열체 연결부 38:보호덮개,30: heating element connection 38: protective cover,

39:볼트 100:성장장치39: bolt 100: growth apparatus

101:실리콘 단결정봉 103:석영도가니,101: silicon single crystal rod 103: quartz crucible,

105:멜트(실리콘 용융물) 107:단열재,105: melt (silicon melt) 107: heat insulating material,

108:발열체 109:챔버108: heating element 109: chamber

이하, 본 발명에 따른 실리콘 단결정 성장장치내의 발열체 연결부 오염방지 보호장치를 첨부된 도면을 참조하여 설명한다.Hereinafter, an apparatus for preventing contamination of a heating element in a silicon single crystal growth apparatus according to the present invention will be described with reference to the accompanying drawings.

첨부도면 중, 도 1은 본 발명에 따른 실리콘 단결정 성장장치를 보인 구조도, 도 2는 본 발명의 실시예에 따른 발열체 연결부 오염방지장치를 보인 단면도를 도시하고 있다.1 is a structural diagram showing a silicon single crystal growth apparatus according to the present invention, Figure 2 is a cross-sectional view showing a pollution prevention device of the heating element connection according to an embodiment of the present invention.

실리콘 단결정 성장장치(100)는, 실리콘 단결정봉(101)을 성장시키는 석영도가니(103)와, 상기 석영도가니(103)에 열을 방사하여 공급하는 발열체(108)와, 상기 발열체(108)를 지지하는 발열체 연결부(30)와, 상기 성장장치 내부를 단열시키는 단열재(107) 및, 상기 장치들을 보호하는 챔버(109)로 구성된다.The silicon single crystal growth apparatus 100 includes a quartz crucible 103 for growing a silicon single crystal rod 101, a heat generator 108 for radiating heat to the quartz crucible 103, and a heat generator 108. It is composed of a heating element connecting portion 30 to support, a heat insulating material 107 to insulate the interior of the growth apparatus, and a chamber 109 for protecting the devices.

그리고, 상기 발열체 연결부(30)에는 상기 발열체(108)를 지지하는 발열체 지지대(33)와, 상기 발열체 지지대(33)와 연결되어 전류를 공급하는 구리 전극 연결부(35)가 형성된다.In addition, the heating element connecting portion 30 is provided with a heating element support 33 for supporting the heating element 108, and a copper electrode connecting portion 35 is connected to the heating element support 33 to supply a current.

또한, 상기 발열체 지지대(33)와 구리전극 연결부(35)를 고정할 수 있도록 너트(37)로 연결하여 형성하게 된다.In addition, it is formed by connecting with a nut 37 to fix the heating element support 33 and the copper electrode connecting portion 35.

이때, 상기 너트(37)의 상측으로 너트(37)가 수용되는 깊이보다 연장된 홈(33a)을 형성하며, 상기 홈(33a)의 바로 상측으로 오염방지용 보호덮개(38)를 끼워 넣어 형성하게 된다.At this time, the groove (33a) is formed to extend above the depth in which the nut 37 is accommodated above the nut 37, and to insert the protection cover 38 for preventing contamination to form just above the groove (33a). do.

한편, 상기 발열체 지지대(33)와 연결되는 발열체(31)의 연결부위에는 발열체(31)로부터 발열체 지지대(33)를 자유롭게 착탈할 수 있도록 하는 볼트(39)를 연결 형성하게 된다.On the other hand, the connection portion of the heating element 31 which is connected to the heating element support 33 is connected to form a bolt 39 to detach the heating element support 33 from the heating element 31 freely.

상기와 같은 구성에 의해 상기 발열체 지지대(33)와, 구리 전극연결부(35)를 연결하는 연결부의 상측으로 산화물 증착물이 쌓이는 것을 차단하여 산화물 오염원으로부터 연결부를 보호하는 보호덮개(38)를 형성함으로써 오염방지수단이 마련되는 것이다.By the above configuration, the heating element support 33 and the copper electrode connection part 35 are formed by forming a protective cover 38 which protects the connection part from the oxide contaminant by blocking the accumulation of oxide deposits on the upper side of the connection part. Prevention means are provided.

또한, 상기 발열체(31)로부터 발열체 지지대(33)를 자유롭게 착탈 가능하게 하는 볼트(39)를 구비케 함으로써, 상기 발열체 지지대(33)와 구리 전극 연결부(35)를 공간적으로 분리 가능하게 하여 발열체 연결부(30)의 산화물 증착을 배제시킴은 물론, 제품 종류의 변화에 의한 다른 구조의 발열체로 교환시 산화물 증착에 다른 제품교환시 작업성을 높일 수 있게 된다.In addition, by providing a bolt (39) for detachably detachable heating element support 33 from the heating element 31, the heating element support 33 and the copper electrode connecting portion 35 can be spatially separated from the heating element connecting portion Except for the oxide deposition of (30), as well as the workability when exchanging other products in the oxide deposition when exchanged to the heating element of a different structure by the change of product type can be improved.

한편, 상기 오염방지수단인 보호덮개(38)는 흑연 또는 용융석영유리로 형성되는 것이 바람직하다.On the other hand, the protective cover 38 is a pollution prevention means is preferably formed of graphite or molten quartz glass.

상기와 같이 구성된 본 발명의 실리콘 단결정 성장장치내의 발열체 연결부 오염방지장치의 작용효과를 설명하면 다음과 같다.Referring to the operation and effect of the pollution prevention device of the heating element in the silicon single crystal growth apparatus of the present invention configured as described above are as follows.

상기 보호덮개(38)에 의해 산화물증착이 심하여 발열체 지지대(33)와 구리전극 연결부(35)인 상측으로 산화물이 침입하여 쌓이는 것을 미연해 방지시키게 되는 것이다. 이로써, 누설전류 발생방지를 위하여 물리적인 힘을 가하여 산화물이 증착된 부위를 제거해야 했던 폐단을 막을 수 있다.Oxide deposition is severed by the protective cover 38 to prevent the oxide from invading and accumulating on the upper side of the heating element support 33 and the copper electrode connecting portion 35. As a result, it is possible to prevent the closed end of having to remove the site where the oxide is deposited by applying a physical force to prevent the leakage current.

또한, 상기 분리수단에 따르면 간단히 연결부의 볼트(39) 해체만으로 발열체(31)와 발열체 지지대(33)의 분리가 가능하게 되어 다른 구조의 발열체(31)와 발열체 지지대(33)로 교환시 연결부위가 산화물로 심화되어 단단하게 고착될 경우 기존의 발열체(31)와 발열체 지지대(33)를 파괴하여 새 것으로 교체하였던 번거러움을 막을 수 있게 된다.In addition, according to the separating means, it is possible to separate the heating element 31 and the heating element support 33 by simply dismantling the bolt 39 of the connecting portion, so that the connecting portion when exchanging the heating element 31 and the heating element support 33 of another structure. If the oxide is deepened and firmly fixed, the existing heating element 31 and the heating element support 33 may be destroyed to prevent the hassle of being replaced with a new one.

뿐만 아니라, 이는 부품 교환시에 따른 작업성의 상승과 발열체 지지대(33)의 손실비용을 줄일 수 있음은 물론, 실리콘 단결정 성장장치의 운영상 누설전류 발생 가능성을 배제시킬 수 있게 되는 것이다.In addition, it is possible to reduce the increase in workability and the loss cost of the heating element support 33 during the replacement of parts, as well as to eliminate the possibility of leakage current in the operation of the silicon single crystal growth apparatus.

이상에서 설명한 바와 같이 본 발명의 실리콘 단결정 성장장치내의 발열체 연결부위의 오염방지장치는 발열체 지지대와 구리전극 연결부위를 공간적으로 분리함으로써 산화물 증착을 배제시키면서, 그 산화물 증착에 따른 누설전류 발생가능성을 없애도록 함은 물론, 생산 제품 종류의 변화에 의해 다른 구조의 발열체로 교환시 작업성의 향상과 기존 발열체와 발열체 지지대를 파손하여만 하는 손실비용을 없애고자 하는 매우 유용한 발명인 것이다.As described above, the pollution prevention device of the heating element connection part in the silicon single crystal growth apparatus of the present invention eliminates oxide deposition by spatially separating the heating element support and the copper electrode connection part, thereby eliminating the possibility of leakage current caused by the oxide deposition. Of course, it is a very useful invention to improve the workability when replacing the heating element of a different structure by the change of the product type and to eliminate the loss cost only to damage the existing heating element and heating element support.

Claims (3)

실리콘 단결정봉을 성장시키는 석영도가니와, 상기 석영도가니로 열을 방사하여 공급하는 발열체와, 상기 발열체를 지지하는 발열체 지지대와, 상기 발열체 지지대에 연결되어 상기 발열체에 전류를 공급하는 구리전극을 구비하는 실리콘 단결정 성장장치에 있어서;And a quartz crucible for growing a silicon single crystal rod, a heating element radiating heat to the quartz crucible, a heating element supporting the heating element, and a copper electrode connected to the heating element support to supply current to the heating element. A silicon single crystal growth apparatus; 상기 구리전극과 상기 발열체 지지대의 연결부에 산화물 증착에 따른 오염을 방지하고 그에 따른 누설전류의 발생을 배제시킬 수 있도록 보호덮개가 구비된 것을 특징으로 하는 실리콘 단결정 성장장치내의 발열체 연결부 오염방지 보호장치.The protection cover of the heating element connecting portion in the silicon single crystal growth apparatus, characterized in that the protective cover is provided to prevent the contamination caused by the deposition of oxides and to prevent the occurrence of leakage current according to the connection portion of the copper electrode and the heating element support. 제 1항에 있어서, 상기 발열체로부터 구리 전극을 공간적으로 분리 가능하게 하는 볼트가 구비된 것을 특징으로 하는 실리콘 단결정 성장장치내의 발열체 연결부 오염방지 보호장치.The protection device of claim 1, wherein a bolt is provided to spatially separate the copper electrode from the heating element. 제 1항에 있어서, 상기 보호덮개가 흑연 또는 용융석영유리로 형성되는 것을 특징으로 하는 실리콘 단결정 성장장치의 발열체 연결부 오염방지 보호장치.The protection device of claim 1, wherein the protective cover is formed of graphite or molten quartz glass.
KR1020010086994A 2001-12-28 2001-12-28 Protector for preventing from contaminating the connection area of heater in the silicon single crystalline ingot growth equipment KR20030056711A (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62171984A (en) * 1986-01-24 1987-07-28 Nippon Telegr & Teleph Corp <Ntt> Apparatus for production of crystal
JPH03271198A (en) * 1990-03-20 1991-12-03 Shin Etsu Handotai Co Ltd Apparatus for pulling up silicon single crystal
JPH1045489A (en) * 1996-07-31 1998-02-17 Sumitomo Sitix Corp Apparatus for producing single crystal
KR20030037054A (en) * 2001-11-02 2003-05-12 주식회사 실트론 Single crystalline silicon ingot grower

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62171984A (en) * 1986-01-24 1987-07-28 Nippon Telegr & Teleph Corp <Ntt> Apparatus for production of crystal
JPH03271198A (en) * 1990-03-20 1991-12-03 Shin Etsu Handotai Co Ltd Apparatus for pulling up silicon single crystal
JPH1045489A (en) * 1996-07-31 1998-02-17 Sumitomo Sitix Corp Apparatus for producing single crystal
KR20030037054A (en) * 2001-11-02 2003-05-12 주식회사 실트론 Single crystalline silicon ingot grower

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