KR20030044562A - Method for patterning PEDOT for organic light emitting diode - Google Patents
Method for patterning PEDOT for organic light emitting diode Download PDFInfo
- Publication number
- KR20030044562A KR20030044562A KR1020010075368A KR20010075368A KR20030044562A KR 20030044562 A KR20030044562 A KR 20030044562A KR 1020010075368 A KR1020010075368 A KR 1020010075368A KR 20010075368 A KR20010075368 A KR 20010075368A KR 20030044562 A KR20030044562 A KR 20030044562A
- Authority
- KR
- South Korea
- Prior art keywords
- conductive polymer
- pedot
- light energy
- patterning
- strong light
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 27
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 title claims abstract description 20
- 238000000059 patterning Methods 0.000 title claims abstract description 19
- 229920001940 conductive polymer Polymers 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000002347 injection Methods 0.000 claims abstract description 10
- 239000007924 injection Substances 0.000 claims abstract description 10
- 238000004528 spin coating Methods 0.000 claims abstract description 8
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000011521 glass Substances 0.000 abstract description 4
- 238000005401 electroluminescence Methods 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
- H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
본 발명은 유기전기 발광 표시장치를 위한 전도성 고분자의 패터닝방법에 관한 것으로, 보다 상세하게는 스핀 코팅과 포토 공정을 이용해서 PEDOT(폴리에틸렌디옥시티오펜)를 패터닝하여 절연층과 정공 주입/전달층 형성하는 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of patterning a conductive polymer for an organic electroluminescent display, and more particularly, to patterning PEDOT (polyethylene dioxythiophene) using spin coating and photo processes to form an insulating layer and a hole injection / transfer layer. It is about how to.
정공 전달(hole transfer)물질로 사용되는 단분자인 TPD, α-NPD 등은 열적 안정성이 떨여져 오랫동안 열에 노출되면 결정화되어 정공 전달물질로써의 성질을 잃어버린다.TPD and α-NPD, which are single molecules used as hole transfer materials, have poor thermal stability and crystallize when exposed to heat for a long time, and lose their properties as hole transfer materials.
이에 반해 고분자인 PEDOT는 높은 열적 안정성과 높은 전도도를 가지고 있어, 정공 전달뿐만 아니라 정공 주입(hole injection) 및 버퍼(buffer)로써의 역할을 수행한다. 그러나, PEDOT는 고분자이기 때문에 단분자와 같은 증착방법으로 패터닝할 수 없다. 즉 고분자 물질을 패터닝할 때 단분자와 같이 잉크 제트 패터닝(ink-jet patterning) 기법을 이용하려면 잉크 제트 프린터(ink-jet printer) 장비가 필요하다. 그러나 이러한 장비는 복잡한 공정, 낮은 접착력 및 불균일한 두께 등 여러 가지 해결해야 할 문제점들이 있다.On the other hand, PEDOT, a polymer, has high thermal stability and high conductivity, and plays a role of hole injection and buffer as well as hole transfer. However, since PEDOT is a polymer, it cannot be patterned by a deposition method such as a single molecule. That is, to use the ink-jet patterning technique such as monomolecules when patterning the polymer material, ink-jet printer equipment is required. However, such equipment has a number of problems to be solved, such as complicated processes, low adhesion, and uneven thickness.
따라서, 본 발명은 스핀 코팅과 포토 공정을 통해서 전도성 고분자를 패터닝하여 절연층과 정공 주입/전달층을 형성하는 것을 목적으로 한다.Accordingly, an object of the present invention is to form an insulating layer and a hole injection / transfer layer by patterning a conductive polymer through spin coating and a photo process.
본 발명의 또 다른 목적은, 스핀 코팅과 포토 공정을 통해서 전도성 고분자를 패터닝하여 공정 수를 줄이는 것에 있다.Another object of the present invention is to reduce the number of processes by patterning the conductive polymer through spin coating and photo processes.
도 1a 내지 도 1c는 본 발명의 바람직한 실시예에 따른 전도성 고분자의 패터닝방법을 나타낸 도면.1a to 1c is a view showing a patterning method of a conductive polymer according to a preferred embodiment of the present invention.
< 도면의 주요부분에 대한 부호의 설명 ><Description of Symbols for Major Parts of Drawings>
1 : ITO이 패터닝된 유리기판2 : 포토 마스크1: ITO patterned glass substrate 2: Photo mask
3 : 절연층 4 : PEDOT 패턴층3: insulation layer 4: PEDOT pattern layer
이러한 목적을 달성하기 위해 본 발명에 따른 전도성 고분자의 패터닝방법은, 기판 위에 전도성 고분자를 스핀 코팅하는 단계; 및 상기 전도성 고분자로 코팅된 기판 위에 포토 마스크를 통해서 강한 빛 에너지를 주사하여 절연층과 전도성 고분자 패턴층을 형성하는 단계를 구비한 것을 특징으로 한다.In order to achieve the above object, the patterning method of the conductive polymer according to the present invention comprises the steps of spin coating the conductive polymer on a substrate; And forming an insulating layer and a conductive polymer pattern layer by scanning strong light energy on the substrate coated with the conductive polymer through a photo mask.
특히 절연층은 강한 빛 에너지가 주사된 전도성 고분자 코팅 기판이고, 전도성 고분자 패턴층은 강한 빛 에너지가 주사되지 않은 전도성 고분자 코팅 기판인 것을 특징으로 한다.In particular, the insulating layer is a conductive polymer coating substrate is a strong light energy is injected, the conductive polymer pattern layer is characterized in that the conductive polymer coating substrate is not injected with strong light energy.
상술한 목적 및 기타의 목적과 본 발명의 특징 및 이점은 첨부도면과 관련한 다음의 상세한 설명을 통해 보다 분명해 질 것이다.The above and other objects and features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.
이하, 첨부도면을 참조하면서 본 발명의 바람직한 실시예를 설명한다.Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.
도 1a 내지 도 1c는 본 발명의 바람직한 실시예에 따른 전도성 고분자의 패터닝방법을 나타낸다.1A to 1C illustrate a method of patterning a conductive polymer according to a preferred embodiment of the present invention.
전도성 고분자인 PEDOT(폴리에틸렌디옥시티오펜)는 높은 전도도를 가지고 있어 정공 주입/전달(hole injection/transfer)뿐만 아니라 버퍼(buffer)로써의 성질도 가지고 있다. 또한, 한번 코팅되면 다시 녹지 않는 성질도 가지고 있다.PEDOT (polyethylene dioxythiophene), a conductive polymer, has a high conductivity and has properties as a buffer as well as hole injection / transfer. Also, once coated, it does not melt again.
이러한 PEDOT를 도 1a에 나타낸 바와 같이 ITO(Indium Tine Oixde)이 패터닝된 유리기판(1) 위에 적정 rpm(revolution per minute), 적정 시간으로 스핀 코팅한 후에 건조시킨다.As shown in FIG. 1A, the PEDOT is spin coated on a glass substrate 1 patterned with indium tin oxide (ITO) at an appropriate rpm (revolution per minute), and then dried.
그런 다음, 도 1b에 나타낸 바와 같이 포토 마스크(2)를 이용하여 강한 빛 에너지(UV/X-ray)를 주사한다.Then, as shown in FIG. 1B, strong light energy (UV / X-ray) is scanned using the photo mask 2.
그러면, 도 1c에 나타낸 바와 같이, 강한 빛 에너지가 주사된 PEDOT 코팅된 기판은 전도도가 낮아져 절연체의 특성을 갖게 된다. 따라서, 강한 빛 에너지가 주사된 부분은 절연층(3)으로 사용된다. 빛 에너지가 주사되지 않은 PEDOT 코팅된 기판은 높은 전도도를 유지하게 있다. 따라서, 강한 빛 에너지가 주사되지 않은 부분은 PEDOT 패턴층(4), 즉 정공 주입/전달층(4)으로 사용된다.Then, as shown in FIG. 1C, the PEDOT coated substrate injected with strong light energy has low conductivity and has characteristics of an insulator. Therefore, the portion where strong light energy is injected is used as the insulating layer 3. PEDOT coated substrates that have not been injected with light energy maintain high conductivity. Therefore, the portion where no strong light energy is scanned is used as the PEDOT pattern layer 4, namely the hole injection / transfer layer 4.
상술한 바와 같이 스핀 코팅과 포토 공정을 통해 전도성 고분자인 PEDOT를 패터닝함으로써 절연층(3)과 정공 주입/전달층(4)을 형성할 수 있다.As described above, the insulating layer 3 and the hole injection / transfer layer 4 may be formed by patterning the conductive polymer PEDOT through spin coating and photo processes.
그리고, 강한 빛 에너지(UV/X-ray)를 포토 마스크를 통해서 PEDOT 코팅된 기판에 주사하면 PEDOT뿐만 아니라 유기물로 구성되어 있는 층을 패터닝할 수 있다. 예컨대, 발광층도 상술한 방법으로 패터닝할 수 있다.In addition, by scanning strong light energy (UV / X-ray) to the PEDOT-coated substrate through a photo mask, it is possible to pattern not only PEDOT but also a layer composed of organic material. For example, the light emitting layer can also be patterned by the method described above.
이상에서 살펴본 바와 같이, 본 발명에 의하면, 잉크-제트 장비없이 스핀 코팅과 포토 공정을 통해서 쉽게 PEDOT를 패터닝하여 절연층과 정공 주입/전달층을 형성함으로써, 공정 수를 줄일 수 있고 이로 인해 OLED의 생산성을 향상시킬 수 있다.As described above, according to the present invention, by forming the insulating layer and the hole injection / transfer layer by easily patterning the PEDOT through spin coating and photo process without ink-jet equipment, the number of processes can be reduced, thereby Productivity can be improved.
아울러 본 발명의 바람직한 실시예들은 예시의 목적을 위해 개시된 것이며, 당업자라면 본 발명의 사상과 범위 안에서 다양한 수정, 변경, 부가 등이 가능할 것이며, 이러한 수정 변경 등은 이하의 특허청구의 범위에 속하는 것으로 보아야 할 것이다.In addition, preferred embodiments of the present invention are disclosed for the purpose of illustration, those skilled in the art will be able to make various modifications, changes, additions, etc. within the spirit and scope of the present invention, such modifications and modifications belong to the scope of the claims You will have to look.
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| KR1020010075368A KR20030044562A (en) | 2001-11-30 | 2001-11-30 | Method for patterning PEDOT for organic light emitting diode |
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| KR1020010075368A KR20030044562A (en) | 2001-11-30 | 2001-11-30 | Method for patterning PEDOT for organic light emitting diode |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006216544A (en) * | 2005-02-03 | 2006-08-17 | Samsung Sdi Co Ltd | Conductive polymer patterned film and method of patterning the same, and organic electroluminescent element using the film and method of manufacturing the element |
| KR100865485B1 (en) * | 2007-06-11 | 2008-10-27 | 단국대학교 산학협력단 | Dry etching method of conductive high polymerized membrane using microwave source |
| WO2017092923A1 (en) * | 2015-12-03 | 2017-06-08 | Mycronic AB | Method and system for manufacturing a workpiece using a polymer layer |
| CN111352313A (en) * | 2018-12-20 | 2020-06-30 | 夏泰鑫半导体(青岛)有限公司 | Method for heating spin-on film on wafer and heating device |
-
2001
- 2001-11-30 KR KR1020010075368A patent/KR20030044562A/en not_active Application Discontinuation
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006216544A (en) * | 2005-02-03 | 2006-08-17 | Samsung Sdi Co Ltd | Conductive polymer patterned film and method of patterning the same, and organic electroluminescent element using the film and method of manufacturing the element |
| US7704677B2 (en) | 2005-02-03 | 2010-04-27 | Samsung Mobile Display Co., Ltd. | Method of patterning conductive polymer layer, organic light emitting device, and method of manufacturing the organic light emitting device |
| KR100865485B1 (en) * | 2007-06-11 | 2008-10-27 | 단국대학교 산학협력단 | Dry etching method of conductive high polymerized membrane using microwave source |
| WO2017092923A1 (en) * | 2015-12-03 | 2017-06-08 | Mycronic AB | Method and system for manufacturing a workpiece using a polymer layer |
| CN108781509A (en) * | 2015-12-03 | 2018-11-09 | 迈康尼股份公司 | The method and system of workpiece is manufactured with polymeric layer |
| US10524359B2 (en) | 2015-12-03 | 2019-12-31 | Mycronic AB | Method and system for manufacturing a workpiece using a polymer layer |
| CN111352313A (en) * | 2018-12-20 | 2020-06-30 | 夏泰鑫半导体(青岛)有限公司 | Method for heating spin-on film on wafer and heating device |
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