KR20030044559A - A silicon and dopant melting method for growing a silicon ingot - Google Patents

Abstract

PURPOSE: A method for melting silicon and dopant is provided to grow a silicon ingot such that the silicon ingot has desired length and diameter by filling a predetermined amount of silicon melt in a quartz crucible. CONSTITUTION: A silicon ingot(101) is grown in one of silicon ingot grower chambers. The grown silicon ingot is transferred to other silicon ingot grower chambers(102). Then, silicon raw material is stacked in a quartz crucible accommodated in the silicon ingot grower chambers(102). First silicon melt is obtained by heating silicon raw material stacked in the quartz crucible. Then, the silicon ingot(101) is dipped into first silicon melt. After that, the silicon ingot(101) dipped into first silicon melt is melted, thereby forming second silicon melt having volume and weight greater than those of first silicon melt.

Description

A silicon and dopant melting method for growing a silicon ingot}

The present invention relates to a method for forming a silicon melt for growing a silicon ingot, and more particularly, to a method for forming a silicon melt for growing a silicon ingot in which a silicon melt contained in a quartz crucible in a silicon ingot growth chamber is filled in an amount necessary for growing a silicon ingot. will be.

The raw and subsidiary material preparation process by the Czochralski (CZ) growth method refers to a process of preparing and managing raw silicon and subsidiary materials that can grow single crystals in a growth chamber (GROWER CHAMBER). The main raw materials needed for this process are POLY SILICON and DOPANT.

Polysilicon mainly uses CHUNK POLY and GRANULE POLY, and GRANULE POLY is an essential raw material when manufacturing 300 mm wafers.

In addition, the dopant (DOPANT) determines the type of the ingot, that is, the N-type and P-type, and boron (BORON) for the P-type and phosphorus (PHOSPHORUS) for the N-type are used.

Since the raw silicon subsidiary material is in a solid state, stacking is sequentially performed in a quartz crucible to be installed inside the growth chamber to melt and form the silicon melt.

At this time, if the silicon raw subsidiary materials are incorrectly stacked, it takes a long time to completely dissolve (MELT DOWN) and form a silicon melt, so that the stacking should be performed sequentially.

Lamination of raw silicon subsidiary materials is usually made of quartz crucibles (DOPANT), the smallest chunks of polysilicon chunks are placed in the middle of the quartz crucibles, and the middle chunks are placed at the top. When the lamination is completed, the shape should be dome shape.

However, the conventional lamination method has a problem that is not suitable for the growth of large-diameter silicon ingot.

In more detail, even when the raw material polysilicon mass and impurities are stacked in a quartz crucible to be filled in a dome shape, when completely dissolved, the total amount of the silicon melt is not filled in the quartz crucible.

In other words, when the silicon agglomerates and impurities are stacked, voids are formed between the agglomerates and the agglomerates, so that the volume of the voids is reduced after complete dissolution. The state requires a separate device.

1 is a view for explaining a conventional silicon ingot growth chamber for growing a silicon ingot by the Czochralski method.

As shown, the conventional silicon ingot growth chamber 10 is placed inside the chamber, rotates at a predetermined speed, and heats the quartz crucible 12 and the quartz crucible in which silicon raw materials are laminated therein, thereby melting the silicon raw materials in a solid state. And an electric heater 14 which is formed into a silicon melt 13 in a liquid state, a driver 16 for growing a silicon ingot by immersing the seed in a silicon melt and slowly pulling up and rotating the silicon ingot, and a quartz crucible. An auxiliary supply 18 is provided outside of the chamber for supplying the polysilicon mass to the quartz crucible to replenish the silicon melt by the reduced raw submaterial volume after complete melting of the raw silicon submaterial.

In the conventional single crystal ingot growth chamber configured as described above, the seed is dipped into the silicon melt 13 of the quartz crucible, and the silicon melt adheres to the seed while the seed is lifted and rotated by the driving unit 16, thereby inducing the silicon ingot. (11) is grown.

However, the conventional silicon ingot growth chamber has an auxiliary supply unit as a device to supplement the silicon melt by reducing the volume of the silicon melt when the silicon raw material stacked on the quartz crucible is supplied, and the silicon supply source is supplied by supplementing the silicon mass inside the quartz crucible. However, the auxiliary supply portion is added to complicate the structure of the silicon ingot growth chamber.

In addition, although the amount of silicon melt must be kept constant in order to grow a silicon ingot having a desired diameter and length, it is difficult to accurately control the amount and weight of polysilicon agglomerate supplied to the quartz crucible from the auxiliary supply, and thus the silicon melt of the quartz crucible Insufficient or excessive volume occurs.

Therefore, when the amount of the silicon melt is insufficient, it is impossible to grow a silicon ingot having a desired diameter and length, and when the amount of the silicon melt is excessive, problems such as overflow of the silicon melt to the outside of the quartz crucible may occur.

Accordingly, the present invention provides a method for forming a silicon melt for the growth of a silicon ingot capable of growing a silicon ingot having a desired diameter and length by always filling a quartz crucible in the silicon ingot growth chamber with a predetermined amount of silicon melt. There is a purpose.

Therefore, the present invention to achieve the above object, the first step of continuously growing the filling silicon ingot for filling the silicon melt in any one of the plurality of silicon ingot growth chamber, and the grown filling silicon ingot silicon A second step of mounting in the ingot growth chamber, a third step of laminating a silicon raw material in a quartz crucible in a silicon ingot growth chamber equipped with a filling silicon ingot, and heating the quartz crucible with an electric heater to heat the silicon raw material to the first silicon And a fourth step of forming a melt and a fifth step of dipping the filling silicon ingot into the first silicon melt to melt together with the first silicon melt to form a second silicon melt. To form.

1 is a view for explaining a conventional single crystal ingot growth chamber.

2 is a block diagram of a silicon ingot manufacturing apparatus according to an embodiment of the present invention.

Figure 3 is a view for explaining a chamber for growing the filling silicon ingot in the silicon ingot manufacturing apparatus according to an embodiment of the present invention.

4 is a view for explaining a chamber for growing a silicon ingot of the silicon ingot manufacturing apparatus according to an embodiment of the present invention.

5 is a view for explaining the melting of the filling silicon ingot in the chamber for growing the silicon ingot of the silicon ingot manufacturing apparatus according to an embodiment of the present invention.

Explanation of symbols for main parts of the drawings

10,100,200: chamber 12,102,202: quartz crucible

13,103,203,303: Silicon melt 14,104,204: Electric heater

16,106,206: drive unit 18,108: auxiliary supply unit

110: detector

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the method for forming a silicon melt for the growth of the silicon ingot according to the present invention.

2 is a block diagram of a silicon ingot manufacturing apparatus according to an embodiment of the present invention.

Referring to Figure 2, the silicon ingot manufacturing apparatus according to an embodiment of the present invention is a chamber of any one of a plurality of silicon ingot growth chamber first chamber 100 for continuously growing a filling silicon ingot for filling the silicon melt The remaining silicon ingot growth chamber is set to the second chamber 200 in which the amount of silicon melt is increased to the filling silicon ingot to grow the silicon ingot.

In FIG. 2, the arrow? Shows the movement path of the filling silicon ingot between the first chamber 100 and the second chamber 200.

More specifically, referring to FIG. 3, which is a view for explaining a first chamber for growing a silicon ingot for filling in a silicon ingot manufacturing apparatus according to an exemplary embodiment of the present invention, the first chamber 100 is placed inside the chamber and has a predetermined speed. A quartz crucible 102 is formed in which a silicon raw material for stacking and rotating a silicon ingot for filling is stacked therein.

An electric heater 104 is formed by heating the quartz crucible 102 to melt the raw silicon subsidiary material to form the silicon melt 103, dipping the seed into the silicon melt, pulling the seed up and rotating the seed. The driving unit 106 allows the filling silicon ingot to grow, and the raw subsidiary material is externally supplied to the quartz crucible to replenish the silicon melt 13 by the volume reduced by the voids after the complete melting of the raw silicon subsidiary materials stacked in the quartz crucible. An auxiliary supply 108 is formed outside the chamber.

In addition, the driver 106 is additionally formed with a sensing unit 110 for sensing the weight of the filling silicon ingot 101.

Here, the sensing unit 110 is for sensing the weight of the filling silicon ingot, and when the filling silicon ingot is pulled up and rotated by the driving unit, when the weight of the filling silicon ingot reaches the desired weight, the ingot is raised as it is and grown. To stop it.

In addition, referring to FIG. 4, which is a view for explaining a second chamber for growing a silicon ingot in a silicon ingot manufacturing apparatus according to an embodiment of the present invention, the second chamber 200 is placed inside the chamber and rotates at a predetermined speed. A quartz crucible 202 is formed in which silicon raw materials for growing substantially silicon ingots to be grown are stacked.

Then, an electric heater 204 is formed by heating the quartz crucible 202 to melt the raw silicon subsidiary material to form the silicon melt 203, and dipping the seed into the silicon melt to pull and rotate the silicon upwards. It comprises a drive unit 206 for growing an ingot.

In addition, the driving unit 206 of the second chamber is equipped with a filling silicon ingot grown in the first chamber 100 to be dipped into the silicon melt 203.

A method of forming a silicon melt for growing a silicon ingot in a silicon ingot manufacturing apparatus according to an embodiment of the present invention having such a configuration will be described with reference to FIGS. 3 to 5.

The silicon melt forming method of the present invention includes a first step of growing the filling silicon ingot 101 in the first chamber 100, and a second step of mounting the grown filling silicon ingot in the second chamber 200; A third step of laminating a silicon raw subsidiary material in a quartz crucible 202 installed in a second chamber, a fourth step of heating the raw silicon subsidiary material with an electric heater 204 to form a first silicon melt 203, A fifth step of dipping the filling silicon ingot 101 into the first silicon melt and melting the dipped filling silicon ingot to form a second silicon melt 303 having a volume and weight greater than that of the first silicon melt It is made to include.

In more detail, the first step is performed in the first chamber as shown in FIG. 3 to grow the filling silicon ingot 101, and is filled in the quartz crucible 102 of the first chamber 100. A lamination step of laminating a silicon raw material for growing a silicon ingot, a silicon melt forming step of forming a silicon melt 103 by heating a quartz crucible 102 with an electric heater 104, and a driving part 106 The seed supply is dipped into the silicon melt, the ingot growth step of growing the filling silicon ingot 101 while lifting and rotating upward, and the silicon melt 103 is reduced as the filling silicon ingot grows the secondary supply unit ( It is composed of a silicon melt filling step to continuously fill by the silicon raw material supplied from 106) to continuously grow the filling silicon ingot.

Here, in the ingot growth step, sensing the weight of the filling silicon ingot 101 continuously grown in the sensing unit 110 connected to the driving unit 106, and the weight of the detected filling silicon ingot is measured in the second chamber ( Matching the amount of silicon melt to be filled in 200 is added to stop pulling and rotating.

In addition, the growth rate of the filling silicon ingot 101 in the ingot growth step can be grown quickly, because the grown filling silicon ingot is remelted in the quartz crucible 202 of the second chamber to the single crystal or polycrystalline growth. For there is no need for courtship.

The second step is performed in a second chamber as shown in FIG. 4 to grow a substantial silicon ingot, and the filling silicon ingot 101 grown in the first step is mounted on the driving unit 206 of the second chamber. It's a step.

Here, the mounting of the filling silicon ingot 101 is transferred to the second chamber as it is in the state attached to the filling silicon ingot grown in the first step, it is made by mounting the seed in the drive unit of the second chamber.

The third step is a lamination step of laminating the silicon raw material for the growth of the silicon ingot to the quartz crucible inside the second chamber.

Here, the silicon raw material is laminated in a dome (DOME) form.

The fourth step is to heat the quartz crucible 202 of the second chamber to the electric heater 204 to grow the silicon ingot to melt the stacked silicon raw materials to form the first silicon melt 202 In addition, the first silicon melt is not filled in the quartz crucible by the gap between the silicon agglomerate and the silicon agglomerate, so that the silicon melt needs to be supplemented in an amount insufficient to grow the silicon ingot to a desired diameter and size.

In the fifth step, to fill the insufficient amount of the first silicon melt, the filling silicon ingot 101 is melted to form a second silicon melt 303 having a melt amount necessary for growth of the silicon ingot. As shown in the second chamber, the filling silicon ingot 101 is dipped in the driver 106 of the second chamber.

Then, when the filling silicon ingot 101 is dipped, the filling silicon ingot in the solid state is gradually melted and mixed by the high temperature first silicon melt and the electric heater 204 to form the second silicon melt 303.

As described above, in the method of forming a silicon melt according to the present invention, a filling silicon ingot having a weight corresponding to a volume reduction amount of a silicon melt contained in a quartz crucible of a second chamber is previously grown in the first chamber, and the filling silicon is grown. An ingot is mounted in the second chamber and melted.

Therefore, the silicon melt melted in the quartz crucible of the second chamber always has a volume and weight suitable for growing a silicon ingot, and efficiently prevents poor growth due to lack of silicon melt and waste of raw materials due to excessive silicon melt. Will be prevented.

In addition, the method for forming a silicon melt according to the present invention is to set any one of the plurality of silicon ingot growth chamber as a chamber for continuously growing a silicon ingot for filling, and in the remaining chamber separate to fill the silicon melt in the quartz crucible There is no need to provide a device.

Therefore, the structure of the silicon ingot growth chamber can be simplified and the operation efficiency can be maximized.

Claims (4)

Growing a filling silicon ingot in any one of a plurality of silicon ingot growth chambers; Mounting the grown silicon ingot into the remaining silicon ingot growth chamber; Stacking a silicon raw subsidiary material in a quartz crucible in the silicon ingot growth chamber equipped with the filling silicon; A fourth step of heating the raw silicon subsidiary material to form a first silicon melt; And a fifth step of dipping the filling silicon ingot into the first silicon melt and melting the dipped filling silicon ingot to form a second silicon melt having a volume and weight greater than that of the first silicon melt. Silicon melt formation method for silicon ingot growth. The method of claim 1, The first step includes the step of depositing a silicon raw material in a quartz crucible in the chamber for growing the filling silicon ingot; Heating the quartz crucible with an electric heater to form a silicon melt for growth of the filling silicon ingot; Mounting a seed on a driving part of the chamber to drip, pull and rotate the silicon melt to grow the filling silicon ingot; And continuously filling the silicon melt, which is reduced as the filling silicon ingot grows, by a silicon raw material supplied from an auxiliary supply of the chamber. The method of claim 2, The growing of the filling ingot may include sensing the weight of the filling silicon ingot grown in the weight sensing unit connected to the driving unit; And stopping the pulling of the ingot by the driving unit when the weight of the filling silicon ingot detected in the sensing step reaches a target weight. The method according to any one of claims 1 to 3 The filling silicon ingot is a silicon melt formation method for growing silicon ingot, characterized in that the single crystal or polycrystalline silicon ingot.