KR20030043069A - Gem coating method - Google Patents

Gem coating method Download PDF

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Publication number
KR20030043069A
KR20030043069A KR1020010074036A KR20010074036A KR20030043069A KR 20030043069 A KR20030043069 A KR 20030043069A KR 1020010074036 A KR1020010074036 A KR 1020010074036A KR 20010074036 A KR20010074036 A KR 20010074036A KR 20030043069 A KR20030043069 A KR 20030043069A
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KR
South Korea
Prior art keywords
thin film
thin layer
metal
tantalum
gold
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KR1020010074036A
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Korean (ko)
Inventor
송오성
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송오성
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Application filed by 송오성 filed Critical 송오성
Priority to KR1020010074036A priority Critical patent/KR20030043069A/en
Publication of KR20030043069A publication Critical patent/KR20030043069A/en

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Classifications

    • A—HUMAN NECESSITIES
    • A44—HABERDASHERY; JEWELLERY
    • A44C—PERSONAL ADORNMENTS, e.g. JEWELLERY; COINS
    • A44C27/00—Making jewellery or other personal adornments
    • A44C27/001—Materials for manufacturing jewellery
    • A44C27/005—Coating layers for jewellery
    • A44C27/006—Metallic coatings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

Abstract

PURPOSE: Provided is a method for coating jewel stones by forming a thin layer on the backside of the jewel stones using gold, platinum, tantalum, silver, silicon and the like in a form by which reflexibility is increased. CONSTITUTION: The method includes forming a thin layer of a metal on the backside of jewel stones using a sputtering apparatus at room temperature. The thin layer of a metal is made using at least one of chrome(Cr), copper(Cu), molybdenum(Mo), Iron(Fe), tantalum(Ta), titanium(Ti), aluminum(Al), gold(Au), lead(Pt), nickel(Ni), tin(Sn) and the like. The method further includes forming another thin layer of a metal on the metallic thin layer of the jewel stones. The thin layer is made using at least one of gold(Au), platinum(Pt), tantalum(Ta), silver(Ag), rhodium(Rh) and silicon(Si). The metallic thin layers are formed to a thickness of 1000 to 5000 angstrom.

Description

보석의 코팅 방법 {Gem coating method}Gem coating method

본 발명은 보석을 가공하는 방법에 관한 것으로서 구체적으로는 투명 또는 반투명한 보석의 뒷면에 금, 백금, 탄탈륨, 은, 실리콘 등 반사율을 높일 수 있는 형태로 박막을 형성시키는 제조공정이다.The present invention relates to a method for processing a jewel, specifically a manufacturing process for forming a thin film in a form that can increase the reflectance such as gold, platinum, tantalum, silver, silicon on the back of a transparent or translucent jewel.

종래에는 보석을 복수의 평면형태로 절삭, 가공함에 따라 자연스럽게 전반사를 유도할 수 있었으나, 가공형태에 따라 전반사가 일어나지 않는 경우에는 보석의 가치가 극히 떨어지는 경우가 있었고, 특히 보석을 곡면의 형태로 가공하는 경우에는 전반사가 일어나지 않아 예상한 보석의 가치상승을 기대할 수 없어 결과적으로 보석원석을 다양한 형태로 가공하는데 제약이 되었다.Conventionally, the total reflection can be induced naturally by cutting and processing gemstones into a plurality of planar shapes, but when total reflection does not occur depending on the processing type, the value of the gemstones is extremely low, and in particular, the gemstones are processed into curved surfaces. In this case, total reflection does not occur, so the expected increase in the value of the gem cannot be expected. As a result, the gemstone is restricted in processing into various forms.

또한 관련분야인 유리세공분야에서는 이미 유리가 전반사가 잘 일어나지 않는 성질을 가지므로 유리의 뒷면을 금속재료를 코팅하여 반사율을 높이는 방법이 사용되어왔으나, 상온의 유리에 고온상태의 금속재료를 증착시키는 경우에는 증착된 금속이 결정질이 아닌, 비정질이 되어 반사율이 떨어지고, 또한 접착된 부분이 쉽게 떨어져나가 내구성이 약해지는 단점이 있어 이를 피하기 위하여 금속재료를 증착하기 전 유리를 고온으로 가열하는 과정이 채택되고 있다.In the related glassworking field, glass has a property that total reflection does not easily occur. Therefore, a method of increasing the reflectance by coating a metal material on the back of the glass has been used. In this case, the deposited metal is not crystalline, but becomes amorphous, so that the reflectance is lowered, and the adhered part is easily peeled off, so that the durability is weakened. To avoid this, the process of heating the glass to a high temperature before depositing the metal material is adopted. It is becoming.

그러나 천연보석을 이러한 기존의 방법에 의하여 가공하는 경우에는 가열에 의하여 보석의 고유색이 변색되거나, 내부의 기공이 팽창하여 보석이 균열 또는 파괴될 우려가 커서, 결국 금속코팅하는 것이 현실적으로 어려웠다.However, when natural gemstones are processed by such conventional methods, the intrinsic color of the gems is changed by heating, or the pores inside are expanded so that the gems may be cracked or destroyed, and thus metal coating is difficult in reality.

본 발명은 상기한 기존의 문제점을 해결하기 위하여 스퍼터링 장치를 채용하여 증착과정에서 보석을 가열하지 않고도 상온에서 금, 백금, 탄탈륨, 은, 실리콘 등 박막을 보석의 후면부에 성막시킬 수 있도록 하는데 그 목적이 있다.In order to solve the above-mentioned problems, the present invention employs a sputtering apparatus to deposit a thin film such as gold, platinum, tantalum, silver, and silicon on the rear surface of a gem at room temperature without heating the gem during deposition. There is this.

도 1은 본 발명에 따른 스퍼터링 장치의 내부를 개략적으로 도시한 사시도이다.1 is a perspective view schematically showing the interior of the sputtering apparatus according to the present invention.

상기 기술적 과제를 달성하기 위하여 본 발명은 상온에서 기압을 감압한 상태에서 보석의 후면부에 금속 박막층을 형성하는 것이 바람직하다.In order to achieve the above technical problem, the present invention preferably forms a metal thin film layer on the rear surface of the jewelry in a reduced pressure state at room temperature.

즉, 본 발명은 보석과 금속간의 접착을 향상시키면서도 반사율이 높은 초기층과 이후 계속 적층되어 박막의 산화를 방지하고 박막내구성을 향상시킬 수 있는 적층구조 박막층을 채용하는 것이 바람직하다. 또한 증착과정에서 스퍼터링 장치를 사용함으로써 보석을 가열하지 않고도 박막의 증착을 할 수 있도록 하였다.That is, the present invention preferably employs a laminated structure thin film layer that can be laminated after the initial layer having a high reflectance while the adhesion between the jewelry and the metal is improved and prevents oxidation of the thin film and improves thin film durability. In addition, by using a sputtering device in the deposition process, it is possible to deposit a thin film without heating the jewelry.

이하 본 발명에 대하여 그 바람직한 실시예를 설명한다.Hereinafter, preferred embodiments of the present invention will be described.

효과적인 금속 박막층 증착을 위해서는 금속 박막층 증착에 앞서 보석 표면에 있는 유기물 등의 불순물을 제거할 필요가 있는데, 이를 위해서 황산과 과수가혼합된 산용액에 세척한 후 순수를 이용하여 산을 제거하고 건조시키는 세척공정을 시행한다.In order to effectively deposit the thin metal layer, it is necessary to remove impurities such as organic substances on the surface of the gemstone prior to depositing the thin metal layer. To this end, it is washed in an acid solution mixed with sulfuric acid and per water, followed by drying with pure water to remove acid and drying. Carry out the cleaning process.

상기 세척과정이 끝나면 도 1에 도시된 스퍼터링 장치를 이용하여 금속박막층을 증착하게 된다. 본 발명에 의한 스퍼터링 장치는 동일한 챔버(chamber)내에서 5가지의 박막층을 대기에 노출시키기 않고 보석후면부에 순차적으로 증착시키는 5개의 건을 가진 구조로 구성되어 있다. 도 1에서 1은 건(gun)이고, 2는 타겟(target)이고, 3은 시편홀더(sample holder)이다. 시편홀더(3)에 보석의 후면이 아래로 가도록 위치시킨 후, 10-5torr 이하로 감압하여 프라즈마(plasma)를 발생시켜 목적하는 보석의 후면부 전면에 크롬 씨드층(Cr seed layer)을 500Å로 증착하고, 연속하여 같은 챔버내에서 대기와의 노출없이 금(Au), 백금(Pt), 탄탈륨(Ta), 은(Ag), 실리콘 등 반사율을 높일 수 있는 금속 박막층 또는 고굴절률의 세라믹 박막을 Pt 또는 Au layer를 1000∼5000Å 두께범위로 반복하여 증착시킨다.After the cleaning process, the metal thin film layer is deposited using the sputtering apparatus shown in FIG. 1. The sputtering apparatus according to the present invention is constructed in a structure having five guns which sequentially deposit five thin film layers on the jewel back surface without exposing to the atmosphere in the same chamber. In FIG. 1, 1 is a gun, 2 is a target, and 3 is a sample holder. Place the back side of the gem on the specimen holder (3), and then reduce the pressure to 10 -5 torr or less to generate plasma, bringing the chromium seed layer (Cr seed layer) to 500Å on the front surface of the desired gem. In the same chamber, a metal thin film layer or a high refractive index ceramic thin film capable of increasing reflectance such as gold (Au), platinum (Pt), tantalum (Ta), silver (Ag), and silicon without exposure to the atmosphere is continuously formed. The Pt or Au layer is repeatedly deposited in a thickness range of 1000 to 5000 microns.

이러한 과정을 거친 보석은 내구성이 우수하고 후면부 반사에 의해 휘도가 증가한 보석이 된다.The jewelry that has undergone this process becomes a durable gemstone and has a high brightness due to rear reflection.

본 발명은 적층구조로 금속 박막층을 증착할 수 있도록 하여 보석의 가공 형태에 따라 전반사가 일어나지 않은 경우에도 금속 박막층을 통해 보석의 반사율과 휘도를 향상시키고, 아울러 이러한 가공을 가열과정 없이 상온에서 가능하게 하여 보석의 변색, 균열, 파괴를 막을 수 있다.The present invention enables to deposit a metal thin film layer in a laminated structure to improve the reflectance and brightness of the jewelry through the metal thin film layer even when total reflection does not occur according to the processing form of the jewelry, and also to enable such processing at room temperature without heating process This can prevent the discoloration, cracking and destruction of the jewelry.

Claims (4)

스퍼터 장치를 사용하여 상온에서 보석의 후면부에 금속 박막층을 형성하는 것을 특징으로 하는 보석 코팅 방법Jewelry coating method comprising forming a thin metal layer on the back of the jewelry at room temperature using a sputter apparatus 제 1항에 있어서 상기 금속박막층은 크롬(Cr), 구리(Cu), 몰리브덴(Mo), 철(Fe), 탄탈륨(Ta), 티타늄(Ti), 알루미늄(Al), 금(Au), 납(Pt), Ni(니켈), Sn(주석) 중 어느 하나 이상을 사용하는 것을 특징으로 하는 보석 코팅 방법The metal thin film layer of claim 1, wherein the metal thin film is formed of chromium (Cr), copper (Cu), molybdenum (Mo), iron (Fe), tantalum (Ta), titanium (Ti), aluminum (Al), gold (Au), and lead. (Pt), Ni (nickel), Sn (tin) any one or more of the jewelry coating method characterized by using 제 1항에 있어서, 상기 금속 박막층 위에 1 이상의 다른 금속 박막층을 형성하는 것을 특징으로 하는 보석 코팅 방법.The method of claim 1, wherein at least one other metal thin film layer is formed on the metal thin film layer. 제3항에 있어서, 상기 다른 금속 박막층은 금(Au), 백금(Pt), 탄탈륨(Ta), 은(Ag) 및 로듐(Rh), 실리콘(Si) 중 어느 하나 이상으로 하는 것을 특징으로 하는 보석 코팅 방법.The method of claim 3, wherein the other metal thin film layer is gold (Au), platinum (Pt), tantalum (Ta), silver (Ag) and rhodium (Rh), silicon (Si) characterized in that at least one. Jewelry coating method.
KR1020010074036A 2001-11-26 2001-11-26 Gem coating method KR20030043069A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040035529A (en) * 2002-10-22 2004-04-29 송오성 Diamond etching with selective oxidation
KR200460137Y1 (en) * 2009-09-01 2012-05-04 (주)포바스 adornment
KR101353137B1 (en) * 2012-06-14 2014-01-20 신철우 Method of manufacturing imitation of pearls

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5929032A (en) * 1982-08-11 1984-02-16 Tsujio Pearl Kogyo Kk Manufacture of artificial pearl
JPS5976873A (en) * 1982-10-22 1984-05-02 Citizen Watch Co Ltd Partial coating method of decorative good
US5853826A (en) * 1996-08-29 1998-12-29 Azotic Coating Technology, Inc. Method of improving the color of transparent materials
US5882786A (en) * 1996-11-15 1999-03-16 C3, Inc. Gemstones formed of silicon carbide with diamond coating
US6197428B1 (en) * 1994-08-26 2001-03-06 Deposition Sciences, Inc. Gemstones and decorative objects comprising a substrate and an optical interference film

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5929032A (en) * 1982-08-11 1984-02-16 Tsujio Pearl Kogyo Kk Manufacture of artificial pearl
JPS5976873A (en) * 1982-10-22 1984-05-02 Citizen Watch Co Ltd Partial coating method of decorative good
US6197428B1 (en) * 1994-08-26 2001-03-06 Deposition Sciences, Inc. Gemstones and decorative objects comprising a substrate and an optical interference film
US5853826A (en) * 1996-08-29 1998-12-29 Azotic Coating Technology, Inc. Method of improving the color of transparent materials
US5882786A (en) * 1996-11-15 1999-03-16 C3, Inc. Gemstones formed of silicon carbide with diamond coating

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040035529A (en) * 2002-10-22 2004-04-29 송오성 Diamond etching with selective oxidation
KR200460137Y1 (en) * 2009-09-01 2012-05-04 (주)포바스 adornment
KR101353137B1 (en) * 2012-06-14 2014-01-20 신철우 Method of manufacturing imitation of pearls

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