KR20030033414A - Apparatus for forming thin film of semiconductor device - Google Patents

Abstract

PURPOSE: An apparatus for forming a thin film of a semiconductor device is provided to be capable of measuring the mass of a wafer before and after a thin film formation process by adding electronic scales to the apparatus. CONSTITUTION: An apparatus for forming a thin film of a semiconductor device is provided with a loading and unloading zone(50), a photoresist coating zone(52) installed with a photoresist coating apparatus(53), a development zone(54) installed with a development apparatus(55), an interface zone(56), and an exposure zone(58) installed with an exposure apparatus(59). The loading and unloading zone(50) includes a loading and unloading stage(64,68) located at one side of the loading and unloading zone(50), and the first and second electronic scale(62,66) installed on the lower portions of the loading and unloading stage(64,68), respectively. A development stage(74) is located between the photoresist coating zone(52) and the development zone(54). The third electronic scale(72) is installed on the lower portion of the development stage(74).

Description

Apparatus for forming thin film of semiconductor device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor thin film forming apparatus, and more particularly, by measuring the mass of a wafer before and after the thin film forming process and analyzing the weight variation of the wafer according to the progress of the thin film forming process. It relates to a semiconductor thin film forming apparatus capable of confirming the abnormality of the.

In general, a semiconductor device manufacturing process includes a step of repeatedly forming a thin film of various materials such as a photoresist coating film, a nitride film and a metal film on a wafer.

In this case, the photoresist coating film is a photoresist coating film by rotating the wafer by inserting the wafer into a bowl-shaped process chamber having a spin chuck and a photoresist injection nozzle to spray the photoresist on the wafer It can be formed using a photoresist coating apparatus for forming a.

The nitride film may be formed using a chemical vapor deposition apparatus in which a wafer is introduced into a process chamber capable of controlling temperature, pressure, reaction gas amount, and the like to pyrolyze the reaction gas to form a thin film on the wafer. Can be.

In addition, the metal film supplies a reaction gas such as argon (Ar) into a process chamber provided with a target made of a metal material to deposit particles separated from the target on the wafer by collision of the argon particles with the target. It can be formed using a sputtering device.

In addition, the presence or absence of the thin film forming process formed on the wafer using each of the above process apparatuses may be measured by using various measuring devices such as a microscope such as uniformity of the thickness of the thin film, electrical properties of the thin film, and heat resistance of the thin film. It confirms by measuring.

1 is a schematic configuration diagram of a conventional semiconductor thin film forming apparatus in which a photolithography process is performed on a wafer.

A conventional semiconductor thin film forming apparatus includes a loading cassette in which a plurality of wafers are loaded as shown in FIG. 1, and an unloading cassette in which the wafers on which the photolithography process is completed are placed. An unloading region 10.

In this case, a first robot arm 24 for transferring a wafer is installed in the loading and unloading region 10, and a wafer 42 is disposed at one side of the loading and unloading region 10, as shown in FIG. 2. The loading stage 20 and the unloading stage 22 having a plurality of pins 40 to support are provided.

Then, the photoresist coating apparatus 13 which forms a photoresist coating film by rotating a wafer by rotating the wafer by placing a wafer on a spin chuck on one side of the loading stage 20 and the unloading stage 22. The photoresist coating area 12 is provided.

In this case, a second robot arm 28 for transferring a wafer is installed in the photoresist coating region 12, and a plurality of pins supporting the wafer 42 on one side of the photoresist coating region, as shown in FIG. 2. A developing stage 26 having (Pin: 40) is provided.

In addition, a developing region 14 provided with a developing device 15 in which a developing process of forming a photoresist pattern is performed by removing a photoresist on a wafer on which one side of the developing stage 26 has been subjected to an exposure process using a developing solution. It is provided.

In this case, a third robot arm 32 for transferring wafers is installed in the developing region 14, and a plurality of pins supporting the wafer 42 on one side of the developing region 14 as illustrated in FIG. 2. An interface stage 32 having a Pin: 40 is provided.

In addition, one side of the interface stage 32 is provided with an interface region 16 functioning as an intermediate connecting passage.

At this time, the fourth robot arm 36 for wafer transfer is installed in the interface region 16, and a plurality of pins (25) supporting the wafer 42 are provided at one side of the interface region 36. An exposure stage 34 having a Pin: 40 is provided.

An exposure apparatus such as a stepper for transferring a circuit pattern embodied in the mask to the photoresist coated on the wafer by scanning light through a mask on the photoresist coated wafer on one side of the exposure stage 34. An exposure area 18 provided with 19 is provided.

At this time, a fifth robot arm 38 for wafer transfer is provided in the exposure region 18.

Therefore, when a cassette in which a plurality of wafers having a series of semiconductor device manufacturing processes are performed is placed in the loading and unloading region 10, the first robot arm 24 may select any one of the wafers loaded in the loading cassette. It is conveyed on the pin 40 of the loading stage 20.

Next, the wafer on the loading stage 20 is transferred by the second robot arm 28 into the photoresist coating apparatus 13 of the photoresist coating region 12 to coat the photoresist on the wafer. Coating process is in progress. The wafer on which the photoresist coating film is formed is transferred to the developing stage 26 by the second robot arm 28. At this time, the wafer is positioned on the fin 40 of the development stage 26.

Subsequently, the wafer on the developing stage 26 is transferred to the interface stage 30 directly through the developing region 14 by the third robot arm 32. In this case, the wafer is positioned on the pin 40 of the interface stage 30.

Subsequently, the wafer on the interface stage 30 is transferred to the exposure stage 34 by passing through the interface region 16 by the fourth robot arm 36. In this case, the wafer is positioned on the pin of the exposure stage 34.

Next, the wafer on the exposure stage 34 is introduced into the exposure apparatus 19 installed in the exposure area 18 by the fifth robot arm 38 to position the mask on the photoresist to scan the mask by light. The exposure process of transferring the circuit pattern previously formed on the wafer is performed.

Subsequently, the wafer subjected to the exposure process in the exposure apparatus 19 is transferred to the exposure stage 34 by the fifth robot arm 38, and the wafer on the exposure stage 34 is transferred to the fourth robot arm ( 36 is transferred to the interface stage 30.

Next, the wafer on the interface stage 30 is introduced into the developing apparatus 15 of the developing region 14 by the third robot arm 32 and receives a light or an area which is lighted by performing the preceding exposure process. A developing process of selectively etching away the unreceived regions using a developer is performed. Then, the wafer in which the developing process is performed in the developing device 15 is transferred to the developing stage 26 by the third robot arm 32, and the wafer on the developing stage 26 is the second robot arm 28. It is transferred to the unloading stage 22 by the.

Finally, the wafer on the unloading stage 22 is loaded into an unloading cassette provided in the loading and unloading area 10 and transferred to a subsequent process facility.

In addition, an analytical process in which the sampled wafer is transferred to an analysis chamber by a worker after analyzing a series of photolithography processes and analyzes the normality of a photolithography process including a photoresist coating process using a measuring device such as a microscope. Proceed.

However, the conventional semiconductor thin film forming apparatus is not provided with an analysis function in itself, and thus it was not possible to confirm whether or not the photoresist coating process was defective immediately after the photoresist coating process.

Therefore, there has been a problem in that photoresist coating defects occur continuously until the analysis process is completed for the wafer on which the photolithography process including the photoresist coating process is completed.

In addition, in order to analyze the defect of the photolithography process including the photoresist coating process, the wafer on which the photolithography process is performed is moved to the analysis chamber, and according to the analysis result, the loss until the defect of the semiconductor thin film forming apparatus is removed. Not only did the time (Loss time) occur, but the work was cumbersome.

An object of the present invention is to determine whether the thin film forming process is normally performed by measuring the mass of the wafer before and after the thin film forming process by adding an electronic balance to the thin film shape device for forming a thin film such as a photoresist, nitride film, metal film, etc. It is to provide a semiconductor thin film forming apparatus that can immediately check and take action.

1 is a schematic configuration diagram of a conventional semiconductor thin film forming apparatus.

FIG. 2 is a schematic cross-sectional view of the stage shown in FIG.

3 is a block diagram of a semiconductor thin film forming apparatus according to an embodiment of the present invention.

4 is a cross-sectional view of the loading stage, unloading stage and developing stage shown in FIG.

5 is a cross-sectional view of the interface step and exposure stage shown in FIG.

6 is a block diagram illustrating an operation principle of an electronic balance installed in a semiconductor thin film forming apparatus according to an embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

10, 50: loading and unloading area 12, 52: photoresist coating

13, 53: photoresist coating apparatus 14, 54: development area

15, 55: developer 16, 56: interface area

18, 58: exposure area 19, 59: exposure apparatus

20, 64: loading stage 22, 68: unloading stage

24, 28, 32, 36, 38, 60, 70, 76, 79, 82: robot arm

26, 74: developing stage 30, 78: interface stage

34, 80: exposure stage 40, 84: pin 42, 86: wafer

62, 66, 72: electronic balance 100: control unit

102: process equipment 104: data storage

106: alarm generator

The semiconductor thin film forming apparatus according to the present invention for achieving the above object is a wafer mass measuring means capable of measuring the mass of the thin film forming chamber for forming a thin film on the wafer and the mass of the wafer that is inserted into and discharged into the thin film forming chamber. It is characterized by comprising a.

The thin film forming apparatus may be any one of a photoresist coating apparatus, a chemical vapor deposition apparatus, and a sputtering apparatus.

The wafer mass measuring means may be made of an electronic balance.

In addition, another semiconductor thin film forming apparatus according to the present invention, a photoresist coating apparatus for coating a photoresist on a wafer, a stage having a plurality of pins on which the wafer is seated and supported, the support and the stage on the stage And a scale for measuring the mass of the wafer located and a robot arm for transporting the wafer.

The stage may be divided into a first stage in which the wafer introduced into the photoresist coating apparatus is seated and a first stage in which the wafer discharged to the outside from the photoresist coating apparatus is seated.

In addition, another semiconductor thin film forming apparatus according to the present invention, the thin film forming chamber for forming a thin film on the wafer; Wafer mass measuring means capable of measuring a mass of the wafer introduced and discharged into the thin film formation chamber; A control unit which controls the progress of the thin film forming process performed in the thin film forming chamber and is connected to the mass measuring means; And

And a data storage unit connected to the control unit and storing a standard mass value of a standard wafer introduced into the thin film forming chamber and a standard mass value of a standard wafer discharged to the outside of the thin film forming chamber.

Here, an alarm generator may be further connected to the controller.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Figure 3 is a block diagram for explaining an embodiment of the semiconductor thin film forming apparatus of the present invention performing a photolithography process on a wafer.

In the semiconductor thin film forming apparatus according to the present invention, as shown in Fig. 3, a loading cassette (not shown) on which a wafer on which a series of semiconductor device manufacturing processes have been performed is placed is placed, and a photoresist coating process, an exposure process, A loading and unloading area 50 in which an unloading cassette (not shown) for loading a wafer having a development process completed is provided.

In this case, a first robot arm 60 for transferring a wafer is installed in the loading and unloading area 50, and a wafer 86 is disposed at one side of the loading and unloading area 50 as shown in FIG. 4. There is a loading stage 64 and an unloading stage 68 having a plurality of pins 84 that can be supported, and the loading stage 64 and the unloading stage 68 are electronic balances 62 and 66, respectively. Located in the phase.

Here, the electronic scales 62 and 66 are set to zero state by subtracting the mass of the loading stage 64 and the unloading stage 68, so that the mass of the wafer located on each stage 64 and 68 is reduced. You can check the measurement immediately.

A photoresist coating apparatus for forming a photoresist coating film on the wafer by placing a wafer on a spin chuck on one side of the loading stage 64 and the unloading stage 68, and then spraying photoresist on the wafer ( A photoresist coating area 52 provided with 53 is provided.

In this case, a second robot arm 70 for transferring a wafer is installed in the photoresist coating region 52, and one side of the photoresist coating region 52 may support the wafer 86 as shown in FIG. 4. A developing stage 74 having a plurality of fins 84 formed thereon is provided, and the developing stage 74 is positioned on the electronic balance 72.

In this case, the mass of the developing stage 74 is subtracted and set to zero, so that the mass of the wafer located on the developing stage 74 can be measured and confirmed.

In addition, a developing region 54 is provided at one side of the developing stage 74 in which a developing apparatus 55 in which a developing process for removing a photoresist on a wafer subjected to an exposure process using a developing solution is performed.

In this case, a third robot arm 76 for transferring wafers is installed in the developing region 54, and a plurality of wafers 90 capable of supporting the wafer 90 on one side of the developing region 54 are illustrated in FIG. 5. The interface stage 78 in which the pin 88 was formed is provided.

In addition, one side of the interface stage 78 is provided with an interface region 56 that functions as an intermediate connecting passage.

In this case, a fourth robot arm 79 for wafer transfer is installed in the interface region 56, and a plurality of wafers 90 capable of supporting the wafer 90 on one side of the interface region 56 are illustrated in FIG. 5. The exposure stage 80 in which the fin 88 was formed is provided.

An exposure area 58 provided with an exposure apparatus 59 such as a stepper for exposing the photoresist coated on the wafer by scanning light through a mask on the photoresist coated wafer on one side of the interface area 56. It is provided.

At this time, a fifth robot arm 82 for wafer transfer is provided in the exposure area 58.

Each of the electronic balances 62, 66, and 72 according to the present invention includes a photoresist coating apparatus 53, a developing apparatus 55, and an exposure apparatus 59. Is applied as an electric signal to the control unit 100 for controlling the operation of the &quot;

In addition, the first standard mass value of the standard wafer introduced into the control unit 100 and the photoresist coating apparatus 53, the second standard of the standard wafer that is completed after the photoresist coating is released in the photoresist coating apparatus 53 The data storage 104 stores the mass value and the third standard mass value of the standard wafer on which the photoresist coating process, the exposure process and the development process are completed, are connected.

In addition, the controller 100 and the alarm generator 106 are connected.

Therefore, when a loading cassette on which a plurality of wafers on which a series of semiconductor device manufacturing processes are performed is loaded is located in the loading and unloading region 50, the first robot arm 60 may be any one of the wafers loaded on the loading cassette. Is transferred to the loading stage 64.

In this case, a first mass value of the wafer on the loading stage 64 is measured by an electronic balance 62 installed under the loading stage 64, and the first mass value is applied to the controller 100 as an electric signal. . In addition, the controller 100 compares and analyzes the first standard mass value and the first mass value stored in the data storage unit 104, and when the first mass value is out of an error range of the first standard mass value, an alarm generator ( 106 is generated to generate an alarm, and the process apparatus 102 is controlled to stop the operation of the process apparatus 102. FIG.

Next, the wafer on the loading stage 64 is transferred into the photoresist coating apparatus of the photoresist coating region 52 by the second robot arm 70 to thinly coat the photoresist on the wafer. This is going on. The photoresist-coated wafer is then transferred to the developing stage 74 by the second robot arm 70.

In this case, a second mass value of the wafer is measured by the electronic balance 72 disposed below the developing stage 74, and the second mass value is an electrical signal to the controller 100. Is approved. The controller 100 compares and analyzes the second standard mass value and the second mass value stored in the data storage unit 104 to determine an alarm generator when the second mass value is out of an error range of the second standard mass value. 106 is generated to generate an alarm, and the process apparatus 102 is controlled to stop the operation of the process apparatus 102. FIG.

Subsequently, the wafer on the developing stage 74 is transferred to the interface stage 78 directly through the developing region 54 by the third robot arm 76. In this case, the wafer is positioned on the pin of the interface stage 78.

Subsequently, the wafer on the interface stage 78 is transferred to the exposure stage 80 by passing through the interface region 56 by the fourth robot arm 79. In this case, the wafer is positioned on the pin of the exposure stage 80.

Next, the wafer on the exposure stage 80 is introduced into the exposure apparatus such as a stepper provided in the exposure area 58 by the fifth robot arm 82, and the mask is placed on the photoresist to scan the light. The exposure process of transferring the circuit pattern previously formed on the wafer is performed.

Subsequently, the wafer subjected to the exposure process in the exposure apparatus is transferred to the exposure stage 80 by the fifth robot arm 82, and the wafer on the exposure stage 80 is transferred to the fourth robot arm 79. Is transferred to the interface stage 78.

Next, the wafer on the interface stage 78 is introduced into the developing apparatus of the developing region 54 by the third robot arm 76 to receive the light or the region which is not subjected to the light by performing the preceding exposure process. A developing process of selectively etching away regions using a developing solution is performed. Then, the wafer in which the developing process is performed in the developing apparatus is transferred to the developing stage 74 by the third robot arm 76, and the wafer on the developing stage 74 is frozen by the second robot arm 70. Transferred to the loading stage 68.

In this case, a third mass value of the wafer is measured by the electronic balance 66 disposed below the unloading stage 68, and the third mass value is transmitted to the controller 100. Is applied as a signal. The controller 100 compares and analyzes the third standard mass value and the third mass value stored in the data storage unit 104 to determine an alarm generator when the third mass value is out of an error range of the third standard mass value. 106 is generated to generate an alarm, and the process apparatus 102 is controlled to stop the operation of the process apparatus 102. FIG.

Finally, the wafer on the unloading stage 68 is loaded into an unloading cassette provided in the loading and unloading area 50 and transferred to a subsequent process facility.

In the present embodiment, the process apparatus for forming, exposing and developing a photoresist coating film on the wafer has been described in detail, but in another embodiment, the electronic balance serving as the wafer mass measuring means according to the present invention is deposited on the wafer. It can also be applied to chemical vapor deposition apparatus and sputtering apparatus to form a.

Therefore, each mass measurement value is measured by measuring the mass of the wafer introduced into the process chamber of the chemical vapor deposition apparatus or the sputtering apparatus, and measuring the mass of the wafer discharged after the chemical vapor deposition process or the sputtering process is completed in the process chamber. By checking and checking whether the standard wafer mass value deviates from the error range, it is possible to immediately analyze whether the preceding process and the thin film forming process are defective.

According to the present invention, the process apparatus for forming a thin film on a wafer further includes an electronic balance as a wafer mass measuring means to measure the mass of the wafer with an electronic balance to determine whether the preceding process is normal and whether the thin film forming process is normal. By immediately checking and taking action, it is possible to prevent continuous process defects from occurring.

In addition, since the normal formation of the thin film forming process can be immediately confirmed, the loss time generated during the process of moving the wafer having the thin film forming process to the analysis room to confirm the normality of the thin film forming process can be reduced, and the analysis process is easy. There is.

Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical spirit of the present invention, and such modifications and modifications belong to the appended claims.

Claims (9)

A thin film forming chamber for forming a thin film on the wafer; And Wafer mass measuring means capable of measuring a mass of the wafer introduced and discharged into the thin film formation chamber; A semiconductor thin film forming apparatus comprising a. The apparatus of claim 1, wherein the thin film forming apparatus is a photoresist coating apparatus. The semiconductor thin film forming apparatus according to claim 1, wherein the thin film forming apparatus is a chemical vapor deposition apparatus. The semiconductor thin film forming apparatus according to claim 1, wherein the thin film forming apparatus is a sputtering apparatus. The semiconductor thin film forming apparatus according to claim 1, wherein the wafer mass measuring means is an electronic balance. A photoresist coating apparatus for coating a photoresist on a wafer; A stage having a plurality of pins on which the wafer is seated and supported; A scale for supporting the stage and for measuring the mass of the wafer located on the stage; And A robot arm for transporting the wafer; A semiconductor thin film forming apparatus comprising a. The apparatus of claim 6, wherein the stage is divided into a first stage on which the wafer introduced into the photoresist coating apparatus is seated and a first stage on which the wafer discharged to the outside from the photoresist coating apparatus is seated. A semiconductor thin film forming apparatus, characterized in that. A thin film forming chamber for forming a thin film on the wafer; And Wafer mass measuring means capable of measuring a mass of the wafer introduced and discharged into the thin film formation chamber; A control unit which controls the progress of the thin film forming process performed in the thin film forming chamber and is connected to the mass measuring means; And A data storage unit connected to the control unit and storing a standard mass value of a standard wafer introduced into the thin film forming chamber and a standard mass value of a standard wafer discharged to the outside of the thin film forming chamber; A semiconductor thin film forming apparatus comprising a. The semiconductor thin film forming apparatus of claim 8, wherein an alarm generator is further connected to the control unit.