JP3616003B2 - Coating film forming method and apparatus - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method and an apparatus for forming a coating film by coating a coating solution such as a resist solution on a substrate surface such as a semiconductor wafer or an LCD substrate (glass substrate for liquid crystal display).
[0002]
[Prior art]
A technique called photolithography performed in a manufacturing process of a semiconductor device or an LCD involves applying a resist solution to a substrate (for example, a semiconductor wafer) to form a coating film on the surface, and exposing the resist film using a photomask. After that, a resist pattern is obtained by performing development processing.
[0003]
The resist liquid coating process in the above process is performed by, for example, a spin coating method. In this method, the substrate is sucked and held horizontally by a rotatable spin chuck, the resist solution is supplied to the substrate from the nozzle above the center of the substrate and the spin chuck is rotated. The resist solution is diffused by centrifugal force. A coating film is formed on the entire substrate.
[0004]
Then, for example, every time a certain number of sheets are processed, the wafer is extracted, and this substrate is applied and transported to a film thickness measuring unit provided outside the developing device, where the film thickness is measured, and the average film thickness obtained from the measurement results If the value does not conform to a predetermined setting value, the spin film rotation speed (swing rotation speed) in the coating unit is reviewed so that the resist film approaches the target film thickness distribution.
[0005]
[Problems to be solved by the invention]
By the way, in this film thickness measurement unit, for example, the wafer is held on the chuck, the wafer surface is irradiated with light from the upper side, the thickness of the resist film is measured based on the reflected light, and the film thickness distribution is based on the measurement result. Is grasped. When it is determined that the obtained film thickness distribution is not a predetermined distribution, for example, when the difference between the maximum value and the minimum value of the film thickness is equal to or larger than a predetermined set value, the wafer is loaded on the heating unit. An alarm is output as an abnormal situation such as a trouble in the heater or the heater of the heating unit, and the operator checks the cause of the trouble.
[0006]
However, in the above method, since the film thickness distribution of the coating film is grasped on the assumption that the wafer is held horizontally on the chuck of the film thickness measurement unit, Even if the wafer has a resist film, if the chuck is tilted, the film thickness distribution of the coating film may be mistaken as being out of the predetermined distribution and an alarm may be output. . Therefore, even if the coating film has a normal film thickness distribution, the operator performs a check operation without knowing the cause of the alarm, resulting in a wasteful effort.
[0007]
The present invention has been made based on such circumstances, and its purpose is to reduce the burden on the operator for investigating the cause when an abnormality in the film thickness distribution of the coating film is detected. It is to provide a method and apparatus.
[0008]
[Means for Solving the Problems]
A coating film forming method according to the present invention includes a coating film forming step of forming a coating film by supplying a coating liquid to the surface of a substrate;
The substrate on which the coating film is formed is held by the substrate holding unit, and the optical axis of the probe is positioned at a number of positions on the substrate surface to irradiate the substrate surface with light, and the coating is performed based on the reflected light. A film thickness measuring step for measuring the film thickness at a number of positions of the film;
A step in which the computer determines whether the film thickness distribution on the substrate obtained based on the measurement result of the film thickness satisfies a preset condition;
A tilt inspection step in which the computer checks the tilt degree of the substrate holding portion when it is determined that the film thickness distribution does not satisfy a preset condition.
[0009]
According to such a method, when the film thickness distribution of the coating film does not satisfy the condition, first, the inclination degree of the substrate holding unit is checked, so that each processing unit is in spite of the substrate holding unit being inclined. It is possible to efficiently check for abnormalities in the film thickness distribution. As the above-mentioned condition, for example, the difference between the maximum value and the minimum value of the film thickness is set to be smaller than a preset value, or the standard deviation of the film thickness distribution is set to be smaller than a preset value. Can do.
[0010]
Further, the present invention may be configured to output an alarm when it is determined that the film thickness distribution does not satisfy the preset condition, and in this way, for example, the operator is notified of the occurrence of the film thickness abnormality and quickly It can be urged to shift to the inclination inspection process described above.
[0011]
As a specific determination method in the above-described tilt inspection process, for example, the light intensity of the reflected light at each irradiation point is measured by irradiating at least four points on the surface of the substrate held by the substrate holding unit, and this measurement result Based on the above, there is a method for determining whether or not the degree of inclination of the substrate holder is larger than a predetermined degree. As a result of the tilt inspection, when the degree of inclination of the substrate holder is larger than a predetermined degree, it is determined that there is an abnormality in the substrate holder, the level of the substrate holder is adjusted, and the inclination of the substrate holder is adjusted. When the degree is smaller than a predetermined degree, the processing conditions in the coating film forming step are reviewed.
[0012]
In addition, the irradiation of light in the tilt inspection process may be performed using the probe. By doing so, the film thickness measurement process and the tilt inspection process can be performed in, for example, the same unit. It is effective for space saving.
[0013]
A coating film forming apparatus according to the present invention includes a carrier mounting unit on which a substrate carrier holding a plurality of substrates is mounted;
Transport means for receiving and transporting the substrate from the carrier placed on the carrier placement section;
A coating unit for supplying a coating liquid to the substrate transported from the transport means to form a coating film on the surface;
A substrate holding unit for holding the substrate on which the coating film is formed is provided, and the optical axis of the probe is positioned at many positions on the surface of the substrate to irradiate the substrate surface with light, and based on the reflected light. a film thickness measuring unit for measuring the film thickness at a number of positions of the coating film Te,
An inspection unit that determines whether or not the film thickness distribution satisfies a preset condition and checks the degree of inclination of the substrate holder of the film thickness measurement unit when the condition is not satisfied. Further, when it is determined that the film thickness distribution does not satisfy a preset condition, an alarm output means for outputting an alarm may be provided, or the inspection means may be provided on the surface of the substrate held by the substrate holder. And means for irradiating at least four points with light, and means for measuring the light intensity of the reflected light at each irradiation site and determining whether the substrate is tilted based on the measurement result. Good.
[0014]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, as an apparatus for carrying out the method according to the present invention, an apparatus in which a coating film forming apparatus is applied to a coating and developing apparatus will be described as an example. FIGS. 1 and 2 are a plan view and a schematic view showing the overall configuration of a resist pattern forming apparatus in which the coating and developing apparatus 100 is connected to an exposure apparatus 200, respectively.
[0015]
In the figure, reference numeral 11 denotes a carrier station for loading and unloading a carrier C in which, for example, 25 wafers of semiconductor wafers (hereinafter referred to as wafers) W are stored. This carrier station 11 is used for mounting the carrier C. And a transfer means 13 for taking out the wafer W. The delivery means 13 is configured to take out the wafer W as a substrate from the carrier C and deliver the taken-out wafer W to the processing unit S1 provided on the back side of the carrier station 11.
[0016]
A main conveying means 14 is provided at the center of the processing unit S1, and the coating unit 2 and the developing unit 15 are seen from the carrier station 11 so as to surround it, for example, the right side, the left side, the near side, and the rear side. On the side, shelf units U1, U2, and U3 in which heating / cooling units and the like are stacked in multiple stages are arranged. In this example, two coating units 2 and two developing units 15 are provided, and the coating unit 2 is disposed on the lower side of the developing unit 15. In the shelf units U1, U2, and U3, in addition to the heating unit and the cooling unit, a wafer transfer unit, a hydrophobic treatment unit, and the like are assigned up and down. The main transfer means 14 is configured to be movable up and down, movable back and forth, and rotatable about the vertical axis, and has a role of transferring the wafer W between the shelf units U1, U2, U3, the coating unit 2 and the developing unit 15. . However, in FIG. 2, the delivery means 13 and the main transport means 14 are not drawn for convenience.
[0017]
The processing unit S1 is connected to the exposure apparatus 200 via the interface unit S2. The interface section S2 includes a delivery means 16, a buffer cassette C0, and a film thickness measurement unit 3. The delivery means 16 is configured to be movable up and down, to the left and to the right and to the rear, and to be rotatable about a vertical axis, for example. The wafer W is transferred between the processing block S1, the exposure apparatus 200, the buffer cassette C0, and the film thickness measuring unit 3.
[0018]
Briefly describing the coating unit 2 with reference to FIG. 3, 21 is a spin chuck, 22 is a drive unit of the spin chuck 21, 23 is a liquid receiving cup, 24 is an exhaust pipe, 25 is a drain pipe, and 26 is This is a resist solution supply nozzle. When the wafer W is delivered to the spin chuck 21 by the main transfer means 14, the resist solution is supplied from the resist solution supply nozzle 26 and the spin chuck 21 is rotated. The resist solution is moved outward of the wafer W by its centrifugal force. A liquid film (coating film) of the resist solution is formed on the surface of the wafer W, and the part that has been shaken off flows down to the liquid receiving cup 23.
[0019]
As shown in FIG. 4, the film thickness measuring unit 3 provided in the interface unit S2 sucks and holds a casing 31 having a transfer port 32 on a side surface and a wafer W provided in the casing 31 from the back side. A chuck 33 which is a substrate holder, a drive mechanism 34 which allows the chuck 33 to rotate and move in the X and Y directions, and a controller 35 which controls the operation of the drive mechanism 34 based on a command from the computer 4 described later. And an optical interference type film thickness meter 36. The optical interference type film thickness meter 36 includes a probe 36a provided so as to face the wafer W on the chuck 33, an optical fiber 36b, and a spectroscope unit 36c including a spectroscope and a controller. It is possible to detect the film thickness based on the spectrum obtained from the reflected light of the irradiated light, measure the reflection intensity of the light, and the like.
[0020]
The film thickness measuring unit 3 detects the reflected light at each position by moving the wafer W in the X and Y directions and positioning the optical axes at a number of positions along the diameter of the wafer W by the probe 36a. Such control is performed by a computer indicated by 4 in FIG. It is also possible to move the probe 36a in the X and Y directions by a drive mechanism (not shown).
[0021]
The computer 4 will be described with reference to FIG. 5. The computer 42 has a configuration in which a memory 42, a CPU 43, an alarm generation unit (alarm output means) 44 and an interface unit 45 are connected via a bus 41. 36c is connected to the controller 35 through a bus 41 and the controller 35 through an interface unit 45.
[0022]
The memory 42 is a storage unit for storing various programs prepared in advance so that a predetermined operation is performed in the film thickness measurement unit 3 based on the operator's selection. For example, the film thickness is obtained from data obtained at the measurement site. The film thickness distribution creating program 42a for creating the distribution curve and whether there is an abnormality in the film thickness distribution obtained by the film thickness creating program 42a, for example, the maximum height difference of the film thickness distribution curve is examined. When the film thickness distribution check program 42b to be confirmed and the film thickness distribution check program 42b check to find that the film thickness distribution is abnormal, the chuck 33 in the film thickness measuring unit 3 is tilted. And an inclination check program 42c for inspecting. Further, the CPU 43 is a data processing unit, and the alarm generation unit 44, for example, when it is determined by the above-described film thickness distribution check program 42b that the difference between the maximum value and the minimum value of the coating film exceeds a predetermined value. For generating an alarm (warning), for example, a buzzer sound, a warning lamp is lit, and an alarm is displayed on the operation screen.
[0023]
Returning now to FIG. 4, the film thickness measurement unit 3 in this example performs peripheral edge exposure of the wafer W exposed by the exposure apparatus 200 in order to remove the peripheral edge resist. Configured to share devices. That is, an exposure means 37 is provided in the casing 31 and a line sensor 38 for detecting the peripheral edge of the wafer W is provided so as to sandwich the passage area of the wafer W up and down.
[0024]
Next, the operation of this embodiment will be described. First, the coating film forming process will be briefly described. First, the carrier C is carried into the carrier mounting unit 12 from the outside, and the wafer W is taken out from the carrier C by the transfer means 13. The wafer W is transferred from the transfer means 13 to the main transfer means 14 via the transfer unit EXT (see FIG. 2) of the shelf unit U2, and a predetermined process such as a hydrophobic process or a cooling process is performed. Subsequently, after the resist solution is applied to the wafer W by the application unit 2 and further heated and the solvent of the resist solution is volatilized, the exposure apparatus 200 passes through the interface unit S2 from the transfer unit that is not visible in the drawing of the shelf unit U3. Sent to.
[0025]
The wafer W exposed by the exposure apparatus 200 is returned to the processing unit S1 through the reverse path, and is transferred from the main transfer means 14 to the developing unit 15 for development processing. In more detail, the wafer W is subjected to a heating process and a cooling process before and after the development process. The developed wafer W is transferred to the transfer means 13 through a path opposite to that described above, and returned to the original carrier C mounted on the carrier mounting portion 12.
[0026]
Thus, for example, when processing of a certain number of wafers W is completed, a recipe for measuring the film thickness is selected. When the subsequent steps are described based on the flowchart shown in FIG. 6, for example, a coating film is formed on the first wafer W of the next lot in the same manner as described above (step 1). Immediately before performing the exposure process, the film is carried into the film thickness measuring unit in the interface section S2. Then, the film thickness of the coating film formed on the wafer W is measured according to the film thickness distribution creating program 42a (step 2), and as a result, a film thickness distribution curve as shown in FIG. 7A is usually obtained. This film thickness distribution curve may be calculated from an approximate expression of the distribution calculated from a set of film thickness measurement values obtained by measurement.
[0027]
Then, it is determined whether or not the curve has a predetermined distribution, for example, whether or not the difference between the maximum value and the minimum value of the film thickness indicated by x in FIG. 7A is within a predetermined set value. However, if the difference is within the set value, it is determined that the coating film is formed normally, the film thickness check is completed, and the production line is restarted. In this case, FIG. 6 shows that the process ends in step 3, but actually, for example, an average film thickness value is calculated, and this average film thickness value falls within an allowable error range with respect to the target film thickness. If it is out of the error range, the number of rotations of the spin chuck 31 is corrected according to the difference between the average value of the film thickness and the target value of the film thickness, and the film thickness of the resist film is corrected. May be made closer to the target film thickness.
[0028]
On the other hand, when the difference x between the maximum value and the minimum value is larger than the set value, the wafer W that should be held horizontally is not held horizontally due to some abnormality in the film thickness measuring unit 3. Whether the film thickness measurement has been performed as it is, or the coating film has not been formed uniformly over the entire surface of the wafer W due to a problem in the process, can be roughly divided into these two factors. For example, an alarm is output to inform the operator that the film thickness distribution is abnormal and to investigate the cause (step 4).
[0029]
The determination of whether or not the coating film shown in step 3 has a predetermined distribution can be made by using a standard deviation of the film thickness measurement value, for example, 3 for this standard deviation. Judgment is made based on whether or not the multiplied 3σ is smaller than a preset value. In this case, if the 3σ is smaller than the set value, it is determined that the coating film is formed normally. If the 3σ is larger than the set value, the difference x between the maximum value and the minimum value of the film thickness is larger than the set value. In the same manner as described above, it is determined that some abnormality has occurred, and the process proceeds to step 4.
[0030]
Here, specific examples of the two factors described above include the case where the chuck of the film thickness measurement unit 3 is defective or the wafer is loaded on the heating unit. The film thickness in this case is as follows. The distribution is, for example, an upward curve as shown in FIG. As a specific example of the latter, for example, a temperature gradient is generated on the surface of the hot plate used in the heating units in the shelf units U1, U2, and U3, so that the heat treatment with different processing conditions is performed at the central portion and the peripheral portion of the wafer W. In some cases, the amount of resist solution supplied to each part of the surface of the wafer W may be uneven depending on the discharge state of the resist solution in the coating unit 2, and the film thickness distribution in this case. Becomes a mortar-shaped curve as shown in FIG.
[0031]
By the way, FIG. 8 is used as an example to explain what processing is performed when the film thickness measurement unit 3 is abnormal, for example, when the chuck 33 is tilted even though the coating film is uniformly formed. At this time, the difference x between the maximum value and the minimum value of the film thickness is within a predetermined set value at three points near the center and both ends of the wafer W shown in the figure, but from the probe 36a at each part to the wafer W. Since the distance to the surface changes like A, B, and C, the change in the distance affects the reflection intensity of the light, and as a result, a measurement result different from the actual value appears. Therefore, as in the case described above, the computer 4 can determine the presence or absence of alarm output by determining whether or not the value of x is within the set value. In this case, since it is determined that the value of x is not within the set value, an alarm is output in step 4.
[0032]
Then, for example, the operator starts an inspection based on this alarm whether there is any abnormality in the chuck 33 in the film thickness measuring unit 3. Specifically, the tilt check program 42c is operated according to an operator's instruction, and for example, a wafer (reference substrate = bare wafer) W1 on which no resist film is formed is transferred from the buffer cassette C0 in the interface unit S2 to the film thickness measuring unit 3 for example. After being conveyed inward and held by the chuck 33, the tilt inspection process (step 5) is started.
[0033]
This inclination inspection process uses the probe 36a provided in the film thickness measurement unit 3 to irradiate light on a plurality of points on the wafer surface to examine the reflection intensity, and the reflection intensity falls within a predetermined setting range. The inclination of the chuck 33, more precisely, the inclination of the surface of the wafer W1 held by the chuck 33 is determined based on whether or not it is held, and the irradiation of light can detect this inclination. For example, it is performed on at least four or more parts arranged in the circumferential direction. As a specific example, for example, in the case of four-point irradiation, as shown in FIG. 9, four points P1 to P4 obtained by equally dividing the wafer W1 in the circumferential direction are selected. The reason why the wafer W1 on which no coating film is formed is used here is to prevent the reflection conditions from changing. Further, it is preferable to use a wafer without warping as the wafer W1.
[0034]
Thus, the reflection intensity of light at each point is obtained, and it is determined whether or not the reflection intensity is within the set range (step 6). Here, the setting range represents an allowable error width when the average value of each reflection intensity is used as a center, for example, and the degree of inclination is determined based on the difference in reflection intensity. For example, FIG. As shown in a), if the reflection intensities at all points are within the set range, it can be understood that the chuck 33 is not inclined (horizontal) or within an allowable range close to it, and the cause of the alarm is the chuck. This is not an abnormality of 33, but is considered to be a problem in each process in the coating film forming step (step 1). Therefore, in this case, the operator confirms the status of the process unit (step 7).
[0035]
On the other hand, for example, as shown in FIG. 10B, when it is determined that there is a point indicating the reflection intensity outside the set range, the chuck 33 is regarded as having an inclination, and an alarm is output from the alarm generation unit 44. (Step 8). After that, for example, the operator recognizes that there is a problem in the levelness of the wafer by this alarm, and makes necessary adjustments to the chuck 33. This adjustment is performed not only on the chuck 33 but also on all portions of the film thickness measurement unit 3 that hold the wafer, for example, the inclination of the wafer holding portion and the shaft portion of the chuck 33, and the chuck 33 from the lower side. Confirmation and adjustment of the installation status of the drive mechanism 34 to be supported are also performed. Thus, a series of steps are completed and normal processing is resumed, but it is preferable to confirm the film thickness distribution again before that.
[0036]
According to the above-described embodiment, when the film thickness distribution of the coating film formed on the wafer deviates from the predetermined distribution, for example, the difference between the maximum value and the minimum value of the film thickness is greater than or equal to the predetermined value, or the film When the standard deviation of the thickness distribution is smaller than a preset value, the chuck 33 of the film thickness measurement unit 3 holds, for example, a bare wafer and measures the reflection intensity of the surface, thereby examining the presence or absence of the inclination of the chuck 33. Therefore, it can be determined whether the factor is the film thickness measurement unit 3 or the process unit that performs the coating film forming process. The useless labor such as checking is reduced, and the abnormality of the film thickness distribution can be checked efficiently.
[0037]
Further, in the present embodiment, the film thickness measurement process (step 2) and the tilt inspection degree process (step 5) of the chuck 33 are performed by the same film thickness measurement unit 3, which saves space. It is effective.
[0038]
Note that the method for inspecting the inclination of the wafer W1 in the inclination inspection step (step 5) can also be performed, for example, as shown in FIG. In this method, the wafer (bare wafer) W1 is held on the chuck 33, light is continuously irradiated from the probe 36a, and the chuck 33 is rotated by the driving mechanism 34. At this time, the portion indicated by X1 in the drawing is the locus of light. For example, if the reflection intensity falls within a predetermined change range during rotation, the reflection intensity is horizontal, and if not, the degree of inclination of the surface of the wafer W1 is determined based on the measurement result.
[0039]
Further, steps 5 and 6 after the alarm is output in step 4 shown in FIG. 6 are not limited to the method performed by the operator. For example, the inclination check program 42c may be automatically activated to perform the inclination inspection process. . Furthermore, in the method of determining the degree of inclination of the chuck 33 in step 6, the chuck 33 has an inclination when the difference between the maximum value and the minimum value of the light reflection intensity measured at, for example, four points is a certain value or more. You may make it judge.
[0040]
In the above, the substrate used in the present embodiment may be an LCD substrate. The coating solution is not limited to a resist solution, and an interlayer insulating material, a low dielectric material, a ferroelectric material, a wiring material, an organic metal material, a metal paste, or the like may be used.
[0041]
【The invention's effect】
According to the present invention, when an abnormality of the coating film is detected by the film thickness measurement unit, the burden on the operator for investigating the cause can be reduced.
[Brief description of the drawings]
FIG. 1 is a plan view showing an embodiment of a coating film forming apparatus according to the present invention.
FIG. 2 is a schematic view showing an embodiment of a coating film forming apparatus according to the present invention.
FIG. 3 is a cross-sectional view illustrating a main part of a coating unit.
FIG. 4 is a cross-sectional view illustrating a main part of a film thickness measuring unit.
FIG. 5 is an explanatory diagram showing a schematic configuration of a computer provided in the film thickness measurement unit.
FIG. 6 is a process diagram for explaining a flow of a coating film forming method according to the present invention.
FIG. 7 is an explanatory view showing an example of a cross-sectional shape of a coating film formed on a wafer.
FIG. 8 is an explanatory diagram for explaining the operation in the present embodiment.
FIG. 9 is an explanatory diagram for explaining the operation in the present embodiment.
FIG. 10 is an explanatory diagram for explaining an operation in the present embodiment.
FIG. 11 is an explanatory diagram for explaining the operation in another embodiment.
[Explanation of symbols]
W, W1 Wafer S1 Processing unit 2 Coating unit 3 Film thickness measuring unit 33 Chuck 36 Optical interference film thickness meter 36a Probe 36c Spectrometer unit 4 Computer 42 Memory

Claims (11)

A coating film forming step of forming a coating film by supplying a coating liquid to the surface of the substrate;
The substrate on which the coating film is formed is held by the substrate holding unit, and the optical axis of the probe is positioned at a number of positions on the substrate surface to irradiate the substrate surface with light, and the coating is performed based on the reflected light. A film thickness measuring step for measuring the film thickness at a number of positions of the film;
A step in which the computer determines whether the film thickness distribution on the substrate obtained based on the measurement result of the film thickness satisfies a preset condition;
And a tilt inspection step in which a computer checks the tilt degree of the substrate holder when it is determined that the film thickness distribution does not satisfy a preset condition. 2. The coating film forming method according to claim 1, further comprising a step of outputting an alarm when it is determined that the film thickness distribution does not satisfy a preset condition. 3. The coating film forming method according to claim 1, wherein the condition set in advance for the film thickness distribution is that a difference between a maximum value and a minimum value of the film thickness is smaller than a preset set value. . 3. The coating film forming method according to claim 1, wherein the condition set in advance for the film thickness distribution is that the standard deviation of the film thickness distribution is smaller than a preset value. The tilt inspection step irradiates at least four points on the surface of the substrate held by the substrate holder and measures the light intensity of the reflected light at each irradiation point. Based on the measurement result, the tilt degree of the substrate holder is determined. 4. The coating film forming method according to claim 1, wherein the coating film forming method is a step of determining whether or not the degree is larger than a predetermined degree. 6. The coating film forming method according to claim 5, wherein the irradiation of light in the tilt inspection step is performed using the probe. 7. The coating film forming method according to claim 1, further comprising a step of adjusting the level of the substrate holder when the degree of inclination of the substrate holder is greater than a predetermined degree. 7. The coating film forming method according to claim 1, further comprising a step of reviewing processing conditions in the coating film forming step when the inclination degree of the substrate holding portion is smaller than a predetermined degree. . A carrier placement section on which a substrate carrier holding a plurality of substrates is placed;
Transport means for receiving and transporting the substrate from the carrier placed on the carrier placement section;
A coating unit that forms a coating film by supplying a coating solution to the substrate transported from the transporting means;
A substrate holding unit for holding the substrate on which the coating film is formed is provided, and the optical axis of the probe is positioned at many positions on the surface of the substrate to irradiate the substrate surface with light, and based on the reflected light. a film thickness measuring unit for measuring the film thickness at a number of positions of the coating film Te,
A coating film comprising: an inspection unit that determines whether or not the film thickness distribution satisfies a preset condition, and checks the inclination degree of the substrate holding portion of the film thickness measurement unit when the condition is not satisfied Forming equipment. 10. The coating film forming apparatus according to claim 9, further comprising an alarm output means for outputting an alarm when it is determined that the film thickness distribution does not satisfy a preset condition. The inspection means measures the light intensity of the reflected light at each irradiation site, the means for irradiating at least four points on the surface of the substrate held by the substrate holder, and the substrate is tilted based on the measurement result The coating film forming apparatus according to claim 9, further comprising: means for determining whether or not the coating film is formed.

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