KR20030030630A - an apparatus for polishing semiconductor wafer - Google Patents

Abstract

PURPOSE: A planarization apparatus for a semiconductor wafer is provided to prevent contaminations of the wafer by removing the slurry fume due to the high pressure DI injection. CONSTITUTION: A planarization apparatus for planarizing a wafer has a table(22), and polishing stations(25a,25b,25c) are installed at the bottom(23) of the table(22). Head members(70a,70b,70c,70d) are placed on the polishing stations(25a,25b,25c) with a plurality of carrier heads(100). A cleaning member is provided between the polishing station neighbors(25a,25b,25c). The cleaning member has the first cleaner for cleaning the polishing station, a second cleaner for cleaning the carrier head and the entire surface of the wafer fitted to the carrier, and a third cleaner for cleaning the bottom(23) of the table(22). The cleaning member has a body with the cleaners, and the first cleaner is formed with a plurality of nozzles formed at the lateral side of the body.

Description

An apparatus for polishing semiconductor wafer

The present invention relates to a CMP facility for planarizing the film quality formed on the wafer surface during the manufacturing process of the semiconductor device, and more particularly to a planarization facility of the wafer to prevent slurry contamination generated in the facility.

In the semiconductor industry, the development of integrated technology is increasing rapidly, and as a result, the steps of various films formed in the wafer are increased, making it difficult to proceed with stable processes and to secure yields. In order to solve this problem, the planarization technology has recently been in the spotlight. Among them, chemical mechanical polishing (CMP) technology has been widely applied, and the degree of polishing technology directly affects semiconductor yield and quality. .

CMP (CHEMICAL MECHANICAL POLISHING) process is a polishing process that combines mechanical removal processing and chemical removal processing in one processing method, and the main role of CMP is to form flattening.

The wafer is polished by the pad and the slurry, and the polishing table (TABLE) to which the pad is attached simply rotates and the head HEAD presses at a constant pressure along with the rotational movement. The wafer is mounted on the head part by surface tension or vacuum, and the surface of the wafer and the pad are contacted by the self-load of the head part and the applied pressure, and the slurry flows through the minute gaps (pores of the pad) between the contact surfaces. The wafers are planarized by mechanical and chemical action by the abrasive grains and the surface protrusions of the pad. After polishing, the surface of the wafer is smeared with foreign matter (film quality) and slurries generated after polishing (POLISHING). In order to remove this, the wafer is cleaned with brush by using CHEMICAL in CLEANER.

As described above, the head portion for moving the pad and the wafer attached to the polishing table (TABLE) rotates, which causes the pad and the head to be consumed and replaced. The pad and head are replaced and then cleaned. At this time, the wafer is polished after cleaning with an INTERPLATEN CLEANER. The polishing table and head are rotated, which causes the slurry to fall to the side and bottom of the polishing table. Sludge falling on the side of the polishing table and floor is cleaned with an INTERPLATEN CLEANER.

However, in the past, the CLEAN method using high-pressure DI injection nozzle is used when cleaning with an interflaton cleaner. The DI WATER sprayed on the side and the bottom of the polishing table has a FUME phenomenon and contaminates the inside of the equipment. Is contaminated.

SUMMARY OF THE INVENTION The present invention has been made to solve such a conventional problem, and an object thereof is to provide a new type of wafer planarization device capable of preventing a fume phenomenon caused by a high pressure cleaning liquid sprayed to a table bottom and a side surface. have.

1 is a schematic view of a scrubber of a CMP plant according to an embodiment of the present invention;

2 and 3 are schematic plan and side views of the cleaner.

4 is an exploded perspective view of the cleaner part;

5 is a front view and a side view of the cleaner portion.

Explanation of symbols on the main parts of the drawings

20: CMP device

22: table

23: table bottom

25a, 25b, 25c: Polishing Station

Edition: 30

32: rotating plate

40: conditioner device

42: arm

70a, 70b, 70c, 70d head system

100: washing station

110: body

112: front nozzle

114: Nodes on the second page

116: third side nozzle

According to a feature of the present invention for achieving the above object, the planarization facility is performed the planarization process of the wafer is a table; A polishing station installed on the table bottom; A head portion mounted above the polishing station and having a plurality of carrier heads; It has a cleaning device installed between neighboring polishing stations. The cleaning apparatus includes a first cleaning unit for cleaning the polishing station; A second cleaning unit for cleaning the carrier head and the entire surface of the wafer supported by the carrier head; And a third cleaning part for cleaning the table bottom surface.

In the present invention, the first cleaning unit is composed of a plurality of side nozzles formed on the side of the body, the second cleaning unit is composed of a plurality of top nozzles formed on the upper surface of the body, The third cleaning part includes a plurality of bottom nozzles formed on the bottom of the body.

In the present invention, it is preferable that the bottom nozzle has a large hole size.

In the present invention, the cleaning device comprises: a body having the cleaning parts formed therein; an inner pipe installed inside the body and in communication with the cleaning parts; A connecting pipe connected to the inner pipe and to an external cleaning liquid supply pipe and a fixing bracket for supporting the body from the table bottom surface.

For example, embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited by the embodiments described below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Accordingly, the shape of the elements in the drawings and the like are exaggerated to emphasize a clearer description.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the drawings, the same reference numerals are given to components that perform the same function.

1 is a view schematically showing a scrubber of a CMP facility according to an embodiment of the present invention. 3 and 4 are schematic plan and side views of the carriage shown in FIG. 2, respectively.

Referring to FIG. 1, one or more substrates 10 are polished by a chemical mechanical polishing (CMP) device 20.

The CMP apparatus 20 according to a preferred embodiment of the invention comprises a table 22, a table bottom 23 mounted thereon and a removable upper outer cover (not shown).

The table bottom 23 comprises a series of polishing stations 25a, 25b, 25c.

Each polishing station 25a, 25b, 25c includes a rotatable plate 30 on which the polishing pad 32 is placed. The plate 30 is a rotatable aluminum or stainless steel plate suitably connected to a plate drive motor (not shown) by a stainless steel plate drive shaft (also not shown). In the best polishing process, the drive motor rotates the plate 30 at about 30 to 200 revolutions per minute. Of course, lower or higher speeds can be used.

The polishing pad 32 may be a composite material having a rough polishing surface. The polishing pad 32 may be attached to the plate 30 by a pressure sensitive adhesive layer. The polishing pad 32 may have a hard top layer and a soft bottom layer.

Each polishing station 25a, 25b, 25c furthermore comprises an associated pad conditioner device 40 and slurry supply means 118 for supplying the slurry to the surface of the polishing pad. Each pad conditioner device 40 has a rotatable arm 42 that holds an independently rotating conditioner head 44 and an associated cleaning recess 46. The conditioner device maintains the condition of the polishing pad while rotating the pad to effectively polish any substrate pressed against the pad.

A slurry 50 comprising a reaction reagent (e.g., deionized water for polishing and polishing), friction particles (e.g., silicon dioxide for polishing and polishing) and a chemical reaction catalyst (e.g., potassium oxide for polishing, polishing) is a slurry of a slurry supply means. It is supplied to the surface of the polishing pad 32 by the supply pipe 52. Sufficient slurry is provided to cover and wet the entire polishing pad 32.

Rotatable multi-head swivel 60 is positioned on table 22. The rotary plate 60 is rotated around the rotary plate axis 64 by a rotary plate motor assembly supported by the central post 62 and located in the table 22. The center post 62 supports the rotary plate support plate 66 and the cover 68. Multi-head rotor 60 includes four carrier head systems 70a, 70b, 70c, 70d. Three of the carrier head systems receive and hold the substrate and polish the substrate by pressing the substrate against the plate-shaped polishing pad 32 of the polishing stations 25a, 25b, 25c.

Four carrier head systems 70a, 70b, 70c, 70d are mounted on the rotor plate support plate 66 at angles equally spaced about the rotor plate axis 64. The center post 62 causes the rotary plate motor to rotate the rotary plate support plate 66 and pivot the carrier head systems 70a, 70b, 70c, 70d and the attachment substrate around the rotary plate axis 64.

Each carrier head system 70a, 70b, 70c, 70d includes a polishing or carrier head 100. Each carrier head 100 rotates independently around its own axis and reciprocates independently laterally in a radial slot 72 formed in the rotary plate support plate 66. The carrier drive shaft 74 connects the carrier head rotating motor 76 to the carrier head 100 (shown by removal of a quarter of the cover 68). There is one carrier drive shaft and motor for each head.

On the other hand, the washing | cleaning apparatus 100 is positioned between the adjacent polishing stations 25a, 25b, and 25c.

3 to 6, the cleaning device 100 is provided with a body 110 and an inner pipe 120 installed inside the body and in communication with the cleaning parts, connected to and connected to the inner pipe. Connection pipe 130 is connected to the cleaning liquid supply pipe and has a fixing bracket 140 for supporting the body (110).

The body 110 includes a first cleaning part 112 for cleaning the polishing stations 25a, 25b, and 25c, a carrier head system 70a, 70b, and 70c, and a front surface of the wafer w supported by the carrier head. A second cleaning unit 114 for cleaning and a third cleaning unit 116 for cleaning the table bottom surface 23 are formed. The first cleaning unit 112 is composed of a plurality of side nozzles 112a formed on the side of the body 110, the second cleaning unit 114 is formed on the upper surface of the body 110 It consists of a plurality of top nozzles 114a. The third cleaning unit 116 includes a plurality of bottom nozzles 116a formed on the bottom of the body.

For example, the body 110 is installed to be spaced apart from the table bottom surface 23 by the fixing bracket 140.

High pressure DI is injected from the second cleaning nozzle which cleans the head and the membrane in the cleaning device having such a configuration, and slurry fume is prevented by the high pressure DI injection in the first and third cleaning nozzles which clean the side and the table bottom. In order to increase the size of the hole.

As described above, in the present invention, the fume phenomenon can be minimized by reducing the pressure of the cleaning liquid sprayed from the spray nozzle of the cleaning apparatus.

In the above, the configuration and operation of the cleaner of the CMP facility according to the present invention has been shown according to the above description and drawings, but this is merely described for example, and various changes and modifications can be made without departing from the technical spirit of the present invention. Of course.

According to the wafer planarization equipment of the present invention as described above, by preventing slurry fume due to high pressure DI injection, the inside of the equipment can be kept clean and wafer contamination can be prevented.

Claims (9)

In a planarization apparatus in which a planarization process of a wafer is performed: With a table; A polishing station installed on the table bottom; A head portion mounted above the polishing station and having a plurality of carrier heads; A cleaning device installed between neighboring polishing stations; The cleaning device A first cleaning unit for cleaning the polishing station; A second cleaning unit for cleaning the carrier head and the entire surface of the wafer supported by the carrier head; And a third cleaning unit for cleaning the table bottom surface. The method of claim 1, The cleaning device A body including the cleaning parts formed therein; And the first cleaning part comprises a plurality of side nozzles formed on a side of the body. The method of claim 1, The cleaning device A body including the cleaning parts formed therein; And the second cleaning part comprises a plurality of top nozzles formed on an upper surface of the body. The method of claim 1, The cleaning device A body including the cleaning parts formed therein; And the third cleaning part comprises a plurality of bottom nozzles formed on the bottom of the body. The method of claim 4, wherein And the bottom nozzle increases the size of the hole to prevent slurry fume caused by high pressure cleaning liquid injection. The method of claim 1, The cleaning device A body in which the cleaning parts are formed; An inner pipe installed inside the body and in communication with the cleaning parts; And a connection pipe connected to the inner pipe and to an external cleaning liquid supply pipe. The method of claim 6, The cleaning device And a fixing bracket for supporting the body from the table bottom surface. The method of claim 7, wherein And the body is spaced apart from the table bottom by the fixing bracket. The method of claim 6, A wafer planarization apparatus using DI as said cleaning liquid.