KR20030026516A - Technology improvement of chemical gas sensor - Google Patents

Technology improvement of chemical gas sensor Download PDF

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KR20030026516A
KR20030026516A KR1020010059533A KR20010059533A KR20030026516A KR 20030026516 A KR20030026516 A KR 20030026516A KR 1020010059533 A KR1020010059533 A KR 1020010059533A KR 20010059533 A KR20010059533 A KR 20010059533A KR 20030026516 A KR20030026516 A KR 20030026516A
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gas sensor
temperature
dopants
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KR100449427B1 (en
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박진성
배인수
박보석
이강
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박진성
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/125Composition of the body, e.g. the composition of its sensitive layer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G41/00Compounds of tungsten
    • C01G41/02Oxides; Hydroxides
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G53/00Compounds of nickel
    • C01G53/04Oxides; Hydroxides
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/0004Gaseous mixtures, e.g. polluted air
    • G01N33/0009General constructional details of gas analysers, e.g. portable test equipment
    • G01N33/0027General constructional details of gas analysers, e.g. portable test equipment concerning the detector
    • G01N33/0036General constructional details of gas analysers, e.g. portable test equipment concerning the detector specially adapted to detect a particular component
    • G01N33/0037NOx

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  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
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  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

PURPOSE: A method for manufacturing semiconductor sensing elements is provided to achieve a highly sensitive NOx gas sensor by controlling grain growth when a high-temperature heat treatment process of WO3 is being performed by adding NiO as dopants. CONSTITUTION: NiO is added to WO3 as dopants. Then, a ball-milling process is carried out for 12 hours by using zirconia ball. After that, a drying process is carried out in an oven having a temperature about 12 deg.C. Dried powder is ground up finely by using an Al2O3 mortar. Then, a bulk sampling piece having a diameter of 1.2cm and thickness of 1mm is made. Then, a sintering process is carried out for 2 hours in an electric furnace having a temperature about 900 deg.C. Paste is made by using 1-heptanol. Then, a thick film is made through a screen printing process. The grain size and grain size distribution are inspected by using a scanning electron microscope. Then, a variation of conductivity is measured.

Description

화학기체센서 특성 개선기술{Technology improvement of chemical gas sensor}Technology improvement of chemical gas sensor

▶ 발명이 속하는 기술분야▶ Technical Field

센서 기술은 검지량에 따라 광, 전기, 자기, 열, 초음파, 역학 등을 정밀 측정 감지하기 위한 물리량 검지 센서 기술과, 습도, 가스, 이온, 냄새, 맛 등을 검출하기 위한 화학량 검지센서, 그리고 생· 화학 그리고 효소 반응을 검지 하기 위한 바이오센서 기술로 분리 할 수 있고 이를 구현하기 위한 다양한 기술이 요구되고 있다.The sensor technology includes physical quantity detection sensor technology for precisely detecting light, electricity, magnetic, heat, ultrasonic waves, and dynamics according to the detected amount, and chemical quantity detection sensor for detecting humidity, gas, ions, smells, and tastes, and Biosensor technology for detecting biochemical and enzymatic reactions can be separated and various technologies are required to implement this.

본 기술은 화학량 중 가스를 검출하기 위한 기체센서 기술이고, 특히 NOx 가스를 정밀 검출하는 산화물 센서 제조 기술에 관한 것이다. WO3는 NOx 가스를 감지하기 위한 감지 물질로써 알려져 있어 WO3를 모물질로 하고 dopants로써 NiO를 첨가함으로써 입자크기와 분포를 제어하여 센서의 특성을 개선하는 기술이다.The present technology relates to a gas sensor technology for detecting a gas in a stoichiometry, and more particularly to an oxide sensor manufacturing technology for precisely detecting NOx gas. WO 3 is known as a sensing material for detecting NOx gas. It is a technology that improves the characteristics of the sensor by controlling particle size and distribution by adding WO 3 as a parent material and adding NiO as dopants.

▶ 그 분야의 종래기술▶ Prior art in that field

① 종래의 일예① Conventional example

수용액을 이용한 분말 합성법에 의한 미세분말 제조법이 보고됨Report on the preparation of fine powder by powder synthesis using aqueous solution

② 종래의 다른예② Other conventional example

WO3분말에 TiO2, SiO2, Bi2O3, BaCO3등을 첨가하여 전도성 변화에 따른 센서특성 개선이 시도되고 있음.TiO 2 , SiO 2 , Bi 2 O 3 , BaCO 3, etc. are added to WO 3 powder to improve the sensor characteristics according to the conductivity change.

▶ 기존에 나와있는 기술의 문제점▶ Problems of existing technology

① 수용액의 분말 합성법은 미세 분말을 얻을수 있으나 공정이 복잡하고 수율이 떨어짐.① Powder synthesis of aqueous solution can obtain fine powder, but the process is complicated and yield is low.

② WO3에 기존 첨가제를(TiO2, SiO2, Bi2O3, BaCO3) 넣어 제조한 센서의 감지특성 개선이 크지 않고 안정성과 재현성이 떨어짐.② The detection characteristics of the sensor prepared by adding the existing additives (TiO 2 , SiO 2 , Bi 2 O 3 , BaCO 3 ) to WO 3 are not significant and the stability and reproducibility are poor.

기존 기술은 산화물 분말은 열처리 할 때 그 입자 크기가 수 ㎛크기로 입자가 성장하고 입도분포도 불균일해서 화학센서의 표면반응에 의한 감지시 비표면적 감소로 감도저하가 문제시 되고있다.In the conventional technology, when the oxide powder is heat-treated, its particle size grows to several μm and its particle size distribution is uneven. Therefore, the sensitivity decrease due to the reduction of specific surface area when sensing by surface reaction of chemical sensor.

이런 문제점을 해결하기 위하여 NiO를 첨가함으로써 WO3의 고온 열처리시에 입자 성장을 억제하고 입도분포를 개선하여 고감도의 NOx가스센서를 구현하는 기술임.In order to solve this problem, NiO is added to suppress particle growth during the high temperature heat treatment of WO 3 and to improve the particle size distribution to realize a high sensitivity NO x gas sensor.

도 1은 WO3에 NiO 0.1mol% 첨가 후 900℃/2h 열처리한 분말의 입자형상, 입자크기, 입도분포를 보여주고 있다.FIG. 1 shows the particle shape, particle size, and particle size distribution of a powder heat-treated at 900 ° C./2 h after adding 0.1 mol% of NiO to WO 3 .

도 2는 첨가제를 넣지 않은 WO3를 900℃/2h 열처리한 분말의 입자형상, 입자크기, 입도분포를 보여주고 있다.Figure 2 shows the particle shape, particle size, particle size distribution of the powder obtained by heat treatment of WO 3 without the additive 900 ℃ / 2h.

도 3은 WO3에 NiO 첨가 유무에 따른 센서감도 특성 및 평균 입자 크기를 비교 표시 하였다.FIG. 3 shows the comparison of sensor sensitivity and average particle size with or without NiO added to WO 3 .

1) 출발원료1) Starting material

- WO3의 모물질에 NiO를 Dopants 로써 첨가하였다.NiO was added as Dopants to the parent material of WO 3 .

2) 실험방법2) Experiment Method

- WO3의 모물질에 NiO mol%를 달리하여 혼합하였다..Mix different amounts of NiO mol% to the parent material of WO 3 .

- 지르코니아 볼을 사용하여 12시간 ball-milling을 실시하였다.-12 hours ball-milling was performed using zirconia balls.

- 120℃ oven에서 건조를 실시함.-Dry in 120 ℃ oven.

- 건조된 분말을 Al2O3유발을 이용하여 미립화 하였다.The dried powder was atomized using Al 2 O 3 induction.

- 직경 1.2㎝ 두께 1㎜의 벌크시편을 제조하였다.A bulk specimen having a diameter of 1.2 cm and a thickness of 1 mm was prepared.

- 전기로에서 900℃, 2시간 소결하였다.Sintering was performed at 900 ° C. for 2 hours in an electric furnace.

- 1-heptanol을 이용하여 paste를 제조-Manufacture paste using 1-heptanol

- Screen printing 방법으로 후막제조-Thick film manufacturing by screen printing method

- 주사전자현미경으로 입자크기 및 입도분포 관찰-Observation of particle size and particle size distribution by scanning electron microscope

- 계측기를 사용하여 전도도 변화를 측정.-Measure the change in conductivity using the instrument.

3) 실험결과3) Experiment result

- NiO를 0.1, 1, 10 mol% 첨가 시 900℃/2h 열처리 후 입자성장을 억제해서 ㎛크기의 입자와, 균일한 입도분포를 갖는 분말을 얻었다.When 0.1, 1, and 10 mol% of NiO was added, the grain growth was suppressed after heat treatment at 900 ° C./2 h to obtain particles having a size of μm and a powder having a uniform particle size distribution.

- NiO 1mol% 첨가로 NOx가스에 대한 향상된 감도를 보여주었다.Addition of 1 mol% of NiO showed improved sensitivity to NO x gas.

- NiO 10mol% 첨가시 NiWO4의 제2상이 생성되었다.The addition of 10 mol% of NiO produced a second phase of NiWO 4 .

- NiO를 0.1, 1, 10mol% 첨가 시 900℃ 열처리 후 입자성장을 억제 할 수 있었으며 입도분포가 우수한 미세구조를 갖도록 제조했다.-When 0.1, 1, 10mol% of NiO was added, it was possible to inhibit grain growth after 900 ℃ heat treatment and to have a fine structure with good particle size distribution.

- NiO 첨가로 NOx가스에 대한 우수한 감도 특성을 얻을 수 있었다. - WO3에 NiO를 고용한계 이상 첨가시 NiWO4의 상이 생성되었다.-NiO addition resulted in excellent sensitivity for NO x gas. Addition of NiO above the solid solution limit to WO 3 produced a phase of NiWO 4 .

Claims (1)

- 기체 센서특성을 향상시키기 위해 WO3에 NiO를 0.0∼10mol% 까지 첨가하는 조성범위-Composition range of adding NiO up to 0.0 ~ 10mol% to WO 3 to improve gas sensor characteristics - WO3-NiO 조성으로 기체센서를 제조하기 위해 800∼950℃ 범위에서 열처리 하는 방법-Method of heat treatment in the range of 800 to 950 ° C. to produce a gas sensor with WO 3 -NiO composition
KR10-2001-0059533A 2001-09-26 2001-09-26 Method for fabricating of gas sensing device KR100449427B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102248737A (en) * 2011-04-14 2011-11-23 天津大学 Cr2O3 or NiO porous film material using WO3 as base material and method for manufacturing air-sensitive sensor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100981166B1 (en) * 2007-11-23 2010-09-10 고려대학교 산학협력단 Fast responding oxide semiconductor-type gas sensor and fabrication method thereof

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59192950A (en) * 1983-04-15 1984-11-01 Hitachi Ltd Detecting element for carbon monoxide
KR100246719B1 (en) * 1997-02-04 2000-04-01 박호군 Nox gas sensor using wo3 sensing layer and its manufacturing method
KR100223818B1 (en) * 1997-04-07 1999-10-15 구자홍 Nitrogen dioxide gas sensor and its manufacturing method
US6113859A (en) * 1998-02-04 2000-09-05 Korea Institute Of Science And Technology Bar-type NOx gas sensor having WO3 sensing film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102248737A (en) * 2011-04-14 2011-11-23 天津大学 Cr2O3 or NiO porous film material using WO3 as base material and method for manufacturing air-sensitive sensor

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