KR20030018476A - Rework method for color filter in tft-lcd - Google Patents

Abstract

PURPOSE: A method for repairing a color filter of a thin film transistor display device is provided to remove an erroneously formed color film using oxygen plasma and re-form the color film. CONSTITUTION: A metal is deposited on a glass substrate and patterned, to form light shielding layer patterns(22) on a predetermined portion of the glass substrate(21). A color film(26) is printed on an exposed portion of the glass substrate, which is placed between neighboring light shielding layer patterns. The color film is inspected and, when the color film has no defect, the next process is carried out. When the color film has a defect, the color film is removed through dry etching, and then the color film is formed again. When the color film has no defect, an overcoat film(24) is formed on the color film and the light shielding layer patterns. A common electrode(25) is formed on the overcoat film.

Description

Color filter repair method for thin film transistor display device {REWORK METHOD FOR COLOR FILTER IN TFT-LCD}

The present invention relates to a method for repairing a color filter of a thin film transistor display device. In particular, when a color layer is misformed, the misformed color layer is removed using an oxygen plasma to remove residues, and a thin film is formed to repair the color layer again. A color filter repair method of a transistor display device is provided.

In general, in the process of manufacturing a thin film transistor display device, the deposition of the thin film and the patterning of the deposited thin film are an iterative process. If the deposited thin film is not deposited as desired, the process is ignored and the next process is continued. As a result, it becomes impossible to obtain a thin film transistor display device having desired characteristics. If you continue the manufacturing process without inspecting the misformed thin film in this way, there will be time loss and costly loss administered throughout the process. It is determined whether it is formed, and it can be repaired.

Conventional color filter repair method is to color the morphologically formed color layer with an etch solution using a mixture of amines and solvents or a mixture of amines, H ₂ O ₂ and solvents, or a mixture of KOH and solvents, and then color A method of forming a layer was used, and the color filter repairing method of the conventional thin film transistor display device will be described in detail with reference to the accompanying drawings.

1A to 1E are cross-sectional views illustrating a process of manufacturing a lower plate of a conventional thin film transistor display device. As shown in FIG. 1A through FIG. 1A, a metal is deposited on an upper surface of a glass substrate 1 and patterned by a photolithography process. Forming a gate electrode 2 on an upper portion of the top (Fig. 1A); The gate insulating film 2 and the amorphous silicon are sequentially deposited on the upper surface of the structure, and the amorphous silicon is patterned so as to be active on the gate insulating film 3 facing the gate electrode 2 and the peripheral portion thereof. Forming a step (Fig. 1B); A metal is deposited on the upper surface of the structure, and the metal is patterned to form a source 5 and a drain 6 spaced apart from each other by a predetermined distance from the center of the active 4 to the side of the active 4. (Step 1c); Depositing a passivation film (7) on the upper surface of the structure and forming a contact hole in the passivation film (7) to expose a portion of the upper portion of the drain (FIG. 1D); ITO is deposited on the upper surface of the structure, and patterned to form a pixel electrode 8 connected to the exposed drain 6 and positioned above the gate insulating film 3 on which no active 4 is formed. It consists of a step (Fig. 1e).

Hereinafter, a method of manufacturing a lower plate of a conventional thin film transistor display device configured as described above will be described in more detail.

First, as shown in FIG. 1A, a metal is deposited on the upper surface of the glass substrate 1 and patterned through a photolithography process to form a gate electrode 2 positioned on an upper portion of the glass substrate 1. .

Then, as shown in Fig. 1B, a gate insulating film 3 is deposited on the upper surface of the structure, and amorphous silicon is deposited on the gate insulating film 3 above.

Next, the amorphous silicon is patterned through a photolithography process to form an active 4 on the gate insulating film 3 facing the peripheral portion of the gate electrode 2 and the gate electrode 2.

Next, as illustrated in FIG. 1C, a metal is deposited on the upper surface of the structure, and the metal is patterned by a photolithography process so as to be spaced apart from the upper center of the active 4 by a channel region. The source 5 and the drain 6 which are located to the side of 4) and the predetermined area above the gate insulating film 3 of the side are formed.

Next, as shown in FIG. 1D, a passivation film 7 is deposited on the upper surface of the structure, and a contact hole is formed in the passivation film 7 through a photolithography process, thereby forming a part of the upper part of the drain 6. Expose

Then, as shown in FIG. 1E, ITO, which is a transparent conductor, is deposited on the upper surface of the structure, and is patterned by a photolithography process and connected to the drain 6 through a contact hole formed in the passivation film 7. In addition, the pixel electrode 8 located in the flat region where the glass substrate 1, the gate insulating film 3, and the passivation film 7 are sequentially deposited is formed on the side of the active 4, and the manufacturing process of the lower plate is completed. To complete.

2A to 2D are cross-sectional views illustrating a process of manufacturing a top plate of a thin film transistor display device including a conventional color filter, as shown in FIG. Forming a light shielding layer 22 positioned on an upper portion of the glass substrate 21 (FIG. 2A); Forming a color layer 23 as a color filter on the glass substrate 21 exposed between the light blocking layers 22 (FIG. 2B); Forming an overcoating layer 24 for protecting the color layer 23 on the upper surface of the structure (FIG. 2C); Forming a common electrode 25 which is a transparent electrode on the upper surface of the structure (Fig. 2d).

Hereinafter, the conventional top plate manufacturing method as described above will be described in more detail.

First, as shown in FIG. 2A, a metal is deposited on the upper surface of the glass substrate 21 and patterned by a photolithography process so as to face the data line connected to the source 5 in the structure of the lower plate, that is, the pixel electrode. The light shielding layer 22 called a black matrix is formed in the position which opposes the area | region in which (8) is not formed.

Next, as shown in FIG. 2B, color layers 23 representing red, green, and blue are alternately used, respectively, by using a printing method, and the upper portions of the glass substrates 21 exposed between the light blocking layers 22 are alternated. Print

At this time, the color layer 23 becomes a position opposite to the pixel electrode 8 on the lower plate, and the light of the backlight is transmitted so that the color can be expressed through the color layer 23.

Next, as shown in FIG. 2C, an overcoat layer 24 is deposited to protect the color layer 23. In this case, the overcoat layer 24 is an organic material.

Next, as shown in FIG. 2D, a common electrode 25, which is a counter electrode generating a potential difference with the pixel electrode 8, is formed on the overcoating layer 24 to form an upper plate of the thin film transistor display device. Form.

The lower plate and the upper plate thus formed are bonded by a bonding process.

3A to 3D are cross-sectional views illustrating a process of bonding the upper and lower plates of a conventional thin film transistor display device. As illustrated therein, an alignment layer 31 is deposited below the common electrode 25 of the manufactured upper plate 30. Rubbing the alignment film 31 with a rubbing cloth to give a constant directionality, and applying a sealant 32 to the outside of the display element on the alignment film 31 (FIG. 3A); The spacer 35 is deposited on the prepared lower plate 33, gives orientation to the alignment layer 34 through a rubbing process, and defines a gap between the upper plate 30 and the lower plate 33. ) Scattering (Fig. 3b); Bonding the upper plate 30 and the alignment layers 31 and 34 of the lower plate 33 to face each other, and curing the sealant 32 to bond the upper plate 30 and the lower plate 33 to each other (FIG. 3C); Injecting the liquid crystal in the region between the upper plate 30 and the lower plate 33, and sealing the injection hole (Fig. 3d).

Hereinafter, the bonding process of the upper plate and the lower plate of the thin film transistor display device as described above will be described in more detail.

First, as shown in FIG. 3A, an alignment layer 31 is coated on the common electrode 25 of the upper plate 30.

Then, the rubbing cloth is attached to a roller or the like to rub the formed alignment film 31, thereby making the surface of the alignment film 31 a surface having a constant orientation.

The directivity at this time determines the directivity of the liquid crystal when the liquid crystal is oriented in the subsequent process.

Next, the sealant 32 is applied to the upper peripheral portion of the alignment layer 31. At this time, the coating of the sealant may be performed by screen printing using a screen mask having a predetermined pattern, or by applying the seal dispenser (SEAL DISPENSE) method, applying the sealant 32 and heating the sealant 32 to the sealant 32. The solvent contained is volatilized.

This sealant 32 is used not only for bonding but also plays an important role in maintaining the cell gap, which is a distance between the upper plate 30 and the lower plate 33. In addition, in consideration of the injection of the liquid crystal when the sealant 32 is applied, the sealant 32 is not formed in part, which serves as an injection hole of the liquid crystal.

Next, as shown in FIG. 3B, an alignment layer 34 is deposited on a surface on which the passivation layer 7 and the pixel electrode 8 are formed on the lower plate 33, and the orientation layer 34 is rubbed to give direction. .

Then, the spacers 35 are scattered on the alignment layer 34.

At this time, in the spreading method, the wet dispersion, which is mixed by dispersing the spacer 35 in a solvent, and the spacer 35 and the lower plate 33 are charged with different conductivity types so that the spacer 35 is dispersed without aggregation.

The scattered spacer 35 is advantageous in maintaining the cell gap when the scattering density is high, but the scattering of light and alignment of the liquid crystal by the spacer 35 are not performed as desired, resulting in a decrease in contrast. Problems will arise.

Next, as shown in FIG. 3C, the upper plate 30 and the lower plate 33 are brought into contact with each other so that the alignment layers 31 and 34 respectively positioned on the upper plate 30 and the lower plate 33 face each other.

In this state, the upper plate 30 and the lower plate 33 are brought into close contact with each other by using the pressure heating method, and the sealant 32 is cured to bond the upper plate 30 and the lower plate 33 to each other.

Next, as shown in FIG. 3D, the liquid crystal 36 is injected through an injection hole where the sealant 32 is not located.

Next, after the liquid crystal 36 is completely injected, the liquid crystal injection hole is sealed so as to be completely blocked from the outside, thereby manufacturing a thin film transistor display device.

If an abnormality occurs in the color layer 23 included in the upper plate 30 in this manufacturing process, if the neglecting proceeds to the bonding process, it should be discarded due to the abnormality of the manufactured thin film transistor display device, and the time loss and The problem arises that the cost of the manufacturing process increases.

Accordingly, after the color layer 23 is formed, the color layer 23 needs to be inspected to repair the color layer 23 according to the inspection result, and the color layer repair method for repairing the conventional color layer 23. When described in detail with reference to the accompanying drawings as follows.

4A to 4D are cross-sectional views of a manufacturing process of a top plate showing a method of repairing a conventional color layer 23. As shown therein, a metal is deposited on the upper surface of the glass substrate 21, and the metal is patterned to obtain glass. Forming a light blocking layer 22 on an upper portion of the substrate 21 (FIG. 4A); Forming a color layer 23 as a color filter on the glass substrate 21 exposed between the light shielding layer 22, and checking the color layer 23 to determine whether there is a malfunction (Fig. 4b) Wow; When the formed color layer 23 is misformed, removing the misformed color layer 23 using wet etching (FIG. 4C); The color layer 26 is formed again at the position where the color layer 23 is removed, thereby repairing the color layer (Fig. 4D).

Hereinafter, the color filter repair method of the conventional thin film transistor display device will be described in more detail.

First, as shown in FIG. 4A, a metal is deposited on the upper surface of the glass substrate 21 and patterned by a photolithography process so as to face the data line connected to the source 5 in the structure of the lower plate, that is, the pixel electrode. The light shielding layer 22 called a black matrix is formed in the position which opposes the area | region in which (8) is not formed.

Then, as shown in FIG. 4B, the color layers 23 representing red, green, and blue are alternately alternately printed on the glass substrate 21 exposed between the light blocking layers 22 by using a printing method. Print

Next, the formed color layer 23 is inspected to determine whether to proceed with the subsequent process.

Then, as shown in FIG. 4C, when the color layer 23 is misformed, a mixed solution of amine and a solvent or a mixed solution of amine, H ₂ O ₂ and a solvent, or KOH and a solvent. Using the selected one of the mixed solution of the incorrectly formed color layer 23 is removed by wet etching.

At this time, the misformed color layer 23 is removed, but is not completely removed by the etching, the residue may remain, and if the repair is performed while the residue remains, after the manufacturing of the display element, a noticeable staining system Can cause abnormalities.

Then, as shown in FIG. 4D, the color layer 26 representing the red, blue, and green colors is re-formed by using a screen printing method or the like to repair the incorrectly formed color layer.

After the color layer 26 is formed in this manner, if the color layer 26 is also formed incorrectly, the gate insulating film 3 is repeated, and the process of forming the color layer again is repeated. If not, the overcoat layer 24 and the common electrode 25 are formed sequentially.

As described above, the method of repairing a color filter of a conventional thin film transistor display device uses a method of removing a misformed color layer through wet etching and forming a color layer again, so that the residue of the color layer due to wet etching remains. After the repair, the characteristics of the display element are degraded, and in particular, the problem of generating a problem of the staining system, as well as the solution used in wet etching, is expensive, and thus there is a problem in that the manufacturing cost increases.

In view of the above problems, the present invention provides a method for repairing a color filter of a thin film transistor display device in which no residue is left when repairing a color layer, and the repair cost is relatively low.

1A to 1E are cross-sectional views of a lower plate manufacturing process of a conventional thin film transistor display device.

2A to 2D are cross-sectional views of a top plate manufacturing process of a conventional thin film transistor display device.

3A to 3D are cross-sectional views of a manufacturing process for joining an upper plate and a lower plate of a conventional thin film transistor display device.

4A to 4D are cross-sectional views of a color filter repair process of a conventional thin film transistor display device.

5A to 5E are cross-sectional views of a lower plate manufacturing process of the thin film transistor display device of the present invention.

6A to 6E are cross-sectional views of a top plate manufacturing process of a thin film transistor display device to which a color filter repairing method of the present invention is applied.

7A to 7D are cross-sectional views of a manufacturing process for joining an upper plate and a lower plate of a thin film transistor display device repaired by the present invention.

** Description of symbols for the main parts of the drawing **

21: glass substrate 22: light shielding layer

23, 26: color layer 24: overcoating layer

25: common electrode

The above object is to deposit a metal on the upper portion of the glass substrate, and patterning to form a light shielding layer located on the upper portion of the glass substrate; Printing a color layer on the glass substrate exposed between the light blocking layers; Inspecting the formed color layer and proceeding to the next step if there is no abnormality, and if there is an abnormality, removing the incorrectly formed color layer by dry etching, and then reforming the color layer again; If there is no abnormality in the color layer is achieved by forming an overcoat layer to protect the color layer, and forming a common electrode on top of the overcoat layer, in detail with reference to the accompanying drawings of the present invention The explanation is as follows.

5A through 5E are cross-sectional views illustrating a lower plate manufacturing process of the thin film transistor display device according to the present invention. As shown in FIG. 5A to 5E, metal is deposited on the upper surface of the glass substrate 1 and patterned by a photolithography process. Forming a gate electrode 2 on an upper portion of the top (Fig. 5A); The gate insulating film 3 and the amorphous silicon are sequentially deposited on the upper surface of the structure, and the amorphous silicon is patterned so as to be active on the gate insulating film 3 facing the gate electrode 2 and the peripheral portion thereof. Step (Fig. 5B); A metal is deposited on the upper surface of the structure, and the metal is patterned to form a source 5 and a drain 6 spaced apart from each other by a predetermined distance from the center of the active 4 to the side of the active 4. Step (FIG. 5C); Depositing a passivation film (7) on the upper surface of the structure and forming a contact hole in the passivation film (7) to expose a portion of the upper portion of the drain (FIG. 5D); ITO is deposited on the upper surface of the structure, and patterned to form a pixel electrode 8 connected to the exposed drain 6 and positioned above the gate insulating film 3 on which no active 4 is formed. It consists of a step (Fig. 5E), which is the same as in the prior art.

6A to 6E are cross-sectional views of a top plate manufacturing process of a thin film transistor display device including a color filter repairing method of the present invention. As shown in FIG. 6A to 6E, metal is deposited on the upper surface of the glass substrate 21 and the metal is patterned. Forming a light shielding layer 22 positioned on an upper portion of the glass substrate 21 (FIG. 6A); Forming a color layer 23 as a color filter on the glass substrate 21 exposed between the light blocking layers 22 and inspecting the color layer 23 (FIG. 6B); When the color layer 23 is misformed as a result of the inspection of the color layer 23, removing the misformed color layer 23 by dry etching (FIG. 6C); The color layer 26 is formed by re-forming the color layer 26 on the glass substrate 21 exposed by the removal of the color layer 23 and inspecting the color layer 26 until there is no abnormality in the color layer 26. Repeating the removal of and the deposition of the color layer (FIG. 6D); If there is no abnormality in the formed color layer 26, forming an overcoat layer 24 to protect the color layer 26, and forming a common electrode 25 as a transparent electrode on the overcoat layer 24 (Fig. 6E).

Hereinafter, a method of repairing the color filter of the present invention as described above and a method of manufacturing a top plate of the thin film transistor display device using the same will be described in more detail.

First, as shown in FIG. 6A, a metal is deposited on the upper surface of the glass substrate 21 and patterned by a photolithography process so as to face the data line connected to the source 5 in the structure of the lower plate, that is, the pixel electrode. The light shielding layer 22 called a black matrix is formed in the position which opposes the area | region in which (8) is not formed.

Then, as shown in FIG. 6B, color layers 23 representing red, green, and blue are alternately used, respectively, using a printing method, and the upper portions of the glass substrates 21 exposed between the light blocking layers 22 are alternated. Print Here, the color layer 23 becomes a position opposite to the pixel electrode 8 on the lower plate, and the light of the backlight is transmitted to express the color through the color layer 23.

Next, the color layer 23 is inspected to determine whether there is an error in the color layer.

Next, as shown in FIG. 6C, when there is an abnormality in the color layer 23, a dry etching process using a mixed gas of oxygen and an activated gas containing F, such as SF ₆ and CF _4, as an etching gas. As a result, the misformed color layer 23 is removed.

In this process, the color layer 23 to be removed is removed in the gaseous state of the monomer (MONOMER) and the polymer material, and since there is no residue as in the case of wet etching, stains are displayed after the display device is manufactured. You can prevent it.

The etching process is performed under a high vacuum of 10 ^-3 Torr or less, and the progress time is removed within 5 minutes using the oxygen plasma to remove the color layer 23 of the ACRYLIC series.

Next, as shown in FIG. 6D, all of the misformed color layer 23 is removed, and then the color layer 26 is formed again through the process of FIG. 6B.

Then, the color layer 26 is inspected again, and if the color layer 26 is incorrectly formed, the color layer 26 is removed by dry etching using the oxygen plasma, and the color layer is formed again.

Thus, the etching and forming process is repeated until there is no abnormality in the color layer, and if there is no problem by inspecting the color layer, the next process is performed.

Next, as shown in FIG. 6E, when the color layer 26 is normally formed, an overcoat layer 24 protecting the color layer 26 is deposited, and ITO is deposited thereon to deposit pixel electrodes ( The common electrode 25, which is a counter electrode for generating a potential difference with 8), is formed to form an upper plate of the thin film transistor display element.

7A to 7D are cross-sectional views of a process of joining an upper plate and a lower plate of a thin film transistor display device in which a color filter is repaired according to the present invention, and as shown therein, the common electrode 25 of the manufactured upper plate 30. Depositing the alignment layer 31 on the lower portion of the alignment layer, rubbing the alignment layer 31 with a rubbing cloth to give a certain directivity, and applying a sealant 32 to the outer portion of the display element on the alignment layer 31 (FIG. 7A). )Wow; The spacer 35 is deposited on the prepared lower plate 33, gives orientation to the alignment layer 34 through a rubbing process, and defines a gap between the upper plate 30 and the lower plate 33. ) Scattering (Fig. 7b); Bonding the upper plate 30 and the alignment layers 31 and 34 of the lower plate 33 to face each other, and curing the sealant 32 to bond the upper plate 30 and the lower plate 33 to each other (FIG. 7C); Injecting the liquid crystal in the region between the upper plate 30 and the lower plate 33, and sealing the injection hole (Fig. 7d), this bonding process is performed in the same manner as in the prior art.

As described above, the present invention checks whether or not the color layer is misformed, and if the misformed color layer is removed by the dry etching method using oxygen plasma, the residue is not removed to prevent deterioration of characteristics of the display device. Repairing the color filter in a relatively low cost process has the effect of reducing the repair cost.

Claims (4)

Depositing and patterning a metal on an upper portion of the glass substrate to form a light blocking layer on an upper portion of the glass substrate; Printing a color layer on the glass substrate exposed between the light blocking layers; Inspecting the formed color layer and proceeding to the next step if there is no abnormality, and if there is an abnormality, removing the incorrectly formed color layer by dry etching, and then reforming the color layer again; And forming an overcoat layer protecting the color layer if there is no abnormality in the color layer, and forming a common electrode on the overcoat layer. The method of claim 1, wherein the dry etching method of removing the misformed color layer is performed by using an oxygen plasma for 5 minutes in a high vacuum of 10 ⁻³ Torr or less. . The method of claim 1 or 2, wherein the source gas of the dry etching method for etching the misformed color layer is a mixed gas of an active gas containing oxygen and F. The method of claim 1 or 2, wherein the etching by-products obtained by etching the color layer are removed in a gaseous state.