KR20030017729A - 원격 플라즈마 발생기 - Google Patents
원격 플라즈마 발생기 Download PDFInfo
- Publication number
- KR20030017729A KR20030017729A KR1020010050715A KR20010050715A KR20030017729A KR 20030017729 A KR20030017729 A KR 20030017729A KR 1020010050715 A KR1020010050715 A KR 1020010050715A KR 20010050715 A KR20010050715 A KR 20010050715A KR 20030017729 A KR20030017729 A KR 20030017729A
- Authority
- KR
- South Korea
- Prior art keywords
- tube
- process chamber
- plasma generator
- remote plasma
- core
- Prior art date
Links
- 238000000034 method Methods 0.000 claims abstract description 33
- 230000008569 process Effects 0.000 claims abstract description 32
- 239000004020 conductor Substances 0.000 claims abstract description 7
- 239000007789 gas Substances 0.000 claims description 27
- 230000004907 flux Effects 0.000 claims description 5
- 239000012495 reaction gas Substances 0.000 claims description 3
- 238000002955 isolation Methods 0.000 abstract 1
- 238000004804 winding Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/335—Cleaning
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma Technology (AREA)
Abstract
Description
Claims (3)
- 가스 소오스로부터 반응가스를 제공받아 플라즈마를 발생하여 프로세스 챔버로 제공하는 원격 플라즈마 발생기에 있어서:자성 코어;상기 자성 코어에 적어도 1회 이상 나선형으로 감겨진 전도성 재질의 튜브를 포함하고,상기 튜브의 입구는 상기 가스 소오스에 연결되고, 출구는 상기 프로세스 챔버에 연결되며, 양단이 저주파를 제공하는 저주파 발진기에 전기적으로 접속되며,그리고 상기 튜브의 양단에는 각기 절연부재가 구성되어 상기 튜브를 상기 가스 소오스와 상기 프로세스 챔버로부터 전기적으로 절연시키는 것을 특징으로 하는 원격 플라즈마 발생기.
- 제1 항에 있어서,상기 자성 코어는상기 나선형으로 감겨진 튜브의 중앙에 위치하는 중심축 코어;상기 중심축 코어의 양단으로 연결되어 자속의 폐쇄 경로를 제공하는 복수개의 연결 코어들을 포함하는 것을 특징으로 하는 원격 플라즈마 발생기.
- 제1 항에 있어서,상기 자성 코어는 상기 나선형으로 감겨진 튜브의 중앙을 통과하는 원형으로 구성되는 것을 특징으로 하는 원격 플라즈마 발생기.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2001-0050715A KR100464809B1 (ko) | 2001-08-22 | 2001-08-22 | 원격 플라즈마 발생기 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2001-0050715A KR100464809B1 (ko) | 2001-08-22 | 2001-08-22 | 원격 플라즈마 발생기 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030017729A true KR20030017729A (ko) | 2003-03-04 |
KR100464809B1 KR100464809B1 (ko) | 2005-01-05 |
Family
ID=27720320
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2001-0050715A KR100464809B1 (ko) | 2001-08-22 | 2001-08-22 | 원격 플라즈마 발생기 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100464809B1 (ko) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100493954B1 (ko) * | 2002-02-09 | 2005-06-08 | 최대규 | 원격 플라즈마 발생장치 |
KR100542740B1 (ko) * | 2002-11-11 | 2006-01-11 | 삼성전자주식회사 | 가스 플라즈마 생성 방법 및 장치, 플라즈마 생성용 가스조성물 및 이를 이용한 반도체 장치의 제조 방법 |
US20210268596A1 (en) * | 2020-02-28 | 2021-09-02 | The Esab Group Inc. | Electromagnetic components cooling apparatus, method, and configuration |
-
2001
- 2001-08-22 KR KR10-2001-0050715A patent/KR100464809B1/ko active IP Right Grant
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100493954B1 (ko) * | 2002-02-09 | 2005-06-08 | 최대규 | 원격 플라즈마 발생장치 |
KR100542740B1 (ko) * | 2002-11-11 | 2006-01-11 | 삼성전자주식회사 | 가스 플라즈마 생성 방법 및 장치, 플라즈마 생성용 가스조성물 및 이를 이용한 반도체 장치의 제조 방법 |
US7193369B2 (en) | 2002-11-11 | 2007-03-20 | Samsung Electronics Co., Ltd. | Method for generating gas plasma |
US7578944B2 (en) | 2002-11-11 | 2009-08-25 | Samsung Electronics Co., Ltd. | Apparatus for generating gas plasma, gas composition for generating plasma and method for manufacturing semiconductor device using the same |
US8083892B2 (en) | 2002-11-11 | 2011-12-27 | Samsung Electronics Co., Ltd. | Apparatus for generating gas plasma, gas composition for generating plasma and method for manufacturing semiconductor device using the same |
US20210268596A1 (en) * | 2020-02-28 | 2021-09-02 | The Esab Group Inc. | Electromagnetic components cooling apparatus, method, and configuration |
WO2021173409A1 (en) * | 2020-02-28 | 2021-09-02 | The Esab Group Inc. | Electromagnetic component assembly, power source for the welding or cutting system with such assembly, and method of cooling an electromagnetic component assembly disposed in a power source for a welding or cutting system |
CN115210025A (zh) * | 2020-02-28 | 2022-10-18 | 依赛彼集团公司 | 电磁部件组件、用于具有这种组件的焊接或切割系统的电源、及用于焊接或切割系统的电源中设置的电磁部件组件的冷却方法 |
US12017294B2 (en) | 2020-02-28 | 2024-06-25 | The Esab Group Inc. | Electromagnetic components cooling apparatus, method, and configuration |
Also Published As
Publication number | Publication date |
---|---|
KR100464809B1 (ko) | 2005-01-05 |
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