KR20030002511A - Apparatus for sensing photoresist burning and method using the same - Google Patents

Apparatus for sensing photoresist burning and method using the same Download PDF

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Publication number
KR20030002511A
KR20030002511A KR1020010038156A KR20010038156A KR20030002511A KR 20030002511 A KR20030002511 A KR 20030002511A KR 1020010038156 A KR1020010038156 A KR 1020010038156A KR 20010038156 A KR20010038156 A KR 20010038156A KR 20030002511 A KR20030002511 A KR 20030002511A
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South Korea
Prior art keywords
photoresist
resistance
wafer
sensor
chuck
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KR1020010038156A
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Korean (ko)
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이연희
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삼성전자 주식회사
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Priority to KR1020010038156A priority Critical patent/KR20030002511A/en
Publication of KR20030002511A publication Critical patent/KR20030002511A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

PURPOSE: An apparatus for sensing photoresist burning is provided to detect whether the temperature of a wafer is changed by the heat generated by the combustion of the photoresist by including a chuck in which the wafer having the photoresist is settled and by installing a resistance detecting sensor in the chuck. CONSTITUTION: The wafer(114) on which the photoresist(116) is applied is settled in the chuck(108). The resistance detecting sensor(110) detects the electrical resistance caused by the temperature changer of the wafer, installed inside the chuck. A sensor control unit(104) flows a uniform quantity of current to the resistance detecting sensor at regular intervals of time and controls the operation of the resistance detecting sensor. An equipment control(100) unit stops an etch process if the resistance value detected by the resistance detecting sensor exceeds a predetermined resistance value.

Description

포토레지스트 연소 감지장치 및 이를 이용한 감지방법{Apparatus for sensing photoresist burning and method using the same}Apparatus for sensing photoresist burning and method using the same}

본 발명은 반도체 소자의 제조장치 및 방법에 관한 것으로서, 특히 포토레지스트의 연소 감지장치 및 감지방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and method for manufacturing a semiconductor device, and more particularly, to a combustion sensing device and a sensing method of a photoresist.

반도체 소자를 제조하는 데 있어서, 식각공정이 필수적으로 이용되고 있다. 통상적으로는 포토레지스트를 식각마스크로 하여 식각공정이 진행된다. 한편, 식각공정 수행중에 웨이퍼에 도포된 포토레지스트가 연소되는 경우가 자주 발생한다. 이는 웨이퍼 주변의 온도상승이나 건식식각시 고주파의 사용으로 인하여 포토레지스트가 연소되는 것이다. 이러한 포토레지스트의 연소는 웨이퍼의 저항의 변화를 야기시켜 공정불량의 요인이 된다.In manufacturing a semiconductor device, an etching process is essentially used. Usually, an etching process is performed using a photoresist as an etching mask. On the other hand, during the etching process, the photoresist applied to the wafer is often burned. This is because the photoresist is burned due to the temperature rise around the wafer or the use of high frequency in dry etching. The combustion of the photoresist causes a change in the resistance of the wafer and causes a process defect.

따라서, 포토레지스트가 연소되면, 식각공정을 멈추어야 한다. 그런데, 아직까지 포토레지스트가 연소되는 것을 감지할 수 있는 장치나 방법이 없는 실정이다.Therefore, when the photoresist is burned, the etching process should be stopped. However, there is no device or method that can detect the burning of the photoresist yet.

따라서, 본 발명이 이루고자 하는 기술적 과제는 포토레지스트가 연소되는 것을 감지하는 장치를 제공하는 데 있다.Accordingly, an object of the present invention is to provide an apparatus for detecting the burning of the photoresist.

또한, 본 발명이 이루고자 하는 다른 기술적 과제는 포토레지스트가 연소되는 것을 감지하는 방법을 제공하는 데 있다.In addition, another technical object of the present invention is to provide a method for detecting that the photoresist is burned.

도 1은 본 발명에 의한 포토레지스트 연소 감지장치 및 이를 이용한 감지방법을 설명하기 위해 나타낸 개략도이다.1 is a schematic diagram illustrating a photoresist combustion detecting apparatus and a sensing method using the same according to the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

100 ; 설비 제어부 102 ; 인터락선100; Facility control unit 102; Interlock

104 ; 센서 제어부 106 ; 신호선104; Sensor controller 106; Signal line

108 ; 척 110 ; 저항감지센서108; Chuck 110; Resistance sensor

112 ; 웨이퍼 스테이지 114 ; 웨이퍼112; Wafer stage 114; wafer

116 ; 포토레지스트116; Photoresist

상기 기술적 과제를 달성하기 위한 본 발명에 의한 포토레지스트 연소 감지장치는, 포토레지스트가 도포된 웨이퍼가 안착되는 척 및 상기 척의 내부에 장착되어 상기 웨이퍼의 온도변화에 의한 전기적인 저항을 감지하는 저항감지센서를 구비한다.The photoresist combustion detection apparatus according to the present invention for achieving the technical problem, the resistance to detect the electrical resistance caused by the temperature change of the wafer is mounted on the chuck and the chuck on which the photoresist coated wafer is seated It is equipped with a sensor.

본 발명에 의한 포토레지스트 연소 감지장치에 의하면, 상기 저항감지센서에 일정한 시간간격으로 전류를 흘려보내고 상기 저항감지센서의 작동을 제어하는 센서 제어부를 더 구비하는 것이 바람직하다.According to the photoresist combustion detecting apparatus according to the present invention, it is preferable to further include a sensor controller for sending a current to the resistance detecting sensor at a predetermined time interval and controlling the operation of the resistance detecting sensor.

본 발명에 의한 포토레지스트 연소 감지장치에 의하면, 상기 저항감지센서에의해 감지된 저항치가 일정한 저항치를 초과하면, 식각공정을 멈추게 하는 설비 제어부를 더 구비하는 것이 바람직하며, 상기 일정한 저항치는 1 ~ 20 ㏁인 것이 바람직하다.According to the photoresist combustion detecting apparatus according to the present invention, if the resistance value detected by the resistance sensor exceeds a predetermined resistance value, it is preferable to further include a facility control unit to stop the etching process, the constant resistance value is 1 to 20 It is preferable that it is.

상기 다른 기술적 과제를 달성하기 위한 본 발명에 의한 포토레지스트 연소 감지방법은, 포토레지스트가 도포된 웨이퍼를 척에 안착시키고 소정의 식각공정을 수행하는 데 있어서, 상기 포토레지스트가 연소시 발생되는 열에 의한 웨이퍼의 온도변화를 저항감지센서에 의해 감지하여 전기적인 저항치로 변화시키는 단계를 포함한다.In accordance with another aspect of the present invention, there is provided a method for detecting photoresist combustion, in which a photoresist-coated wafer is mounted on a chuck and a predetermined etching process is performed. Detecting a temperature change of the wafer by a resistance sensor and changing the wafer into an electrical resistance value.

본 발명에 의한 포토레지스트 연소 감지방법에 의하면, 상기 전기적인 저항치가 일정한 저항치를 초과하면, 설비 제어부에 의하여 식각공정을 중단시키는 단계를 더 포함할 수 있다.According to the photoresist combustion detection method according to the present invention, if the electrical resistance value exceeds a predetermined resistance value, it may further comprise the step of stopping the etching process by the facility control unit.

이하, 첨부된 도면을 참조하여 본 발명을 더욱 상세히 설명하기로 한다. 본 발명은 이하에서 개시되는 실시예에 한정하는 것이 아니라 서로 다른 다양한 형태로 구현될 수 있으며, 단지 본 실시예는 본 발명의 개시가 완전하도록 하며, 통상의 지식을 가진 자에게 발명의 범주를 완전하게 알려주기 위해 제공되는 것이다.Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. The present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms, only this embodiment to make the disclosure of the present invention complete, and complete the scope of the invention to those skilled in the art It is provided to inform you.

도 1은 본 발명에 의한 포토레지스트 연소 감지장치 및 이를 이용한 감지방법을 설명하기 위해 나타낸 개략도이다.1 is a schematic diagram illustrating a photoresist combustion detecting apparatus and a sensing method using the same according to the present invention.

도 1을 참조하면, 포토레지스트 연소 감지 장치는 포토레지스트(116)가 도포된 웨이퍼(114)가 안착되는 웨이퍼 스테이지(112)와, 웨이퍼 스테이지(112)의 하단에 저항감지센서(110)를 내부에 장착한 척(108)과, 저항감지센서(110)에 일정한 시간간격으로 전류를 흘려보내고 저항감지센서(110)의 작동을 제어하는 센서 제어부(104) 및 저항감지센서(110)에 의해 감지된 저항치가 일정한 저항치를 초과하면, 식각공정을 멈추게 하는 설비 제어부(100)를 구비한다. 여기서 참조부호 106은 신호선 및 참조부호 102는 인터락(interlock)선을 나타낸다. 이때, 웨이퍼 스테이지(112)는 수평식 또는 수직식 모두를 사용할 수 있다.Referring to FIG. 1, the photoresist combustion detecting apparatus includes a wafer stage 112 on which a wafer 114 coated with a photoresist 116 is seated, and a resistance sensor 110 at a lower end of the wafer stage 112. The sensor control unit 104 and the resistance sensor 110 to send a current to the resistance sensor 110, the resistance sensor 110 at a predetermined time interval and controls the operation of the resistance sensor 110 mounted on the sensor. If the resistance value exceeds the predetermined resistance value, the facility control unit 100 for stopping the etching process is provided. Here, reference numeral 106 denotes a signal line and reference numeral 102 denotes an interlock line. In this case, the wafer stage 112 may use either a horizontal type or a vertical type.

상기 저항감지센서(110)은 척(108)의 내부에 일정한 간격으로 장착되는 것이 바람직하다, 구체적으로 살펴보면, 지면에서의 높이가 동일하도록 장착된 저항감지센서(110)가 3개인 경우에는 각 저항감지센서(110)를 120°간격으로 배치할 수 있다. 저항감지센서(110)에 흘려보내는 전류량과 시간간격은 센서 제어부(104)에서 조절한다. 즉, 장착된 저항감지센서(110)의 종류, 갯수 및 간격 등을 고려하여 적절하게 제어한다.Preferably, the resistance sensor 110 is mounted at a predetermined interval inside the chuck 108. Specifically, when the resistance sensor 110 is mounted to have the same height on the ground, the resistances may be three. The detection sensor 110 may be disposed at 120 ° intervals. The amount of current and the time interval flowing through the resistance detection sensor 110 are adjusted by the sensor controller 104. That is, it is appropriately controlled in consideration of the type, number and interval of the mounted resistance detection sensor (110).

포토레지스트(116)가 연소되는 것을 감지하는 방법을 살펴보면, 포토레지스트(116)가 도포된 웨이퍼(114)를 웨이퍼 스테이지(112)에 안착시키고 소정의 식각공정을 수행하는 데 있어서, 척(108)의 내부에 장착된 저항감지센서(110)에서 포토레지스트(116)가 연소시 발생되는 열을 감지하여 전기적인 저항치로 변화시킨다. 여기서, 웨이퍼(114)를 웨이퍼 스테이지(112)에 안착시킨다고 했으나, 웨이퍼 스테이지(112)는 척(108)의 일부이므로 척(108)에 안착된다고 표현하여도 무방하다.Looking at the method of detecting the burning of the photoresist 116, the chuck 108 in seating the wafer 114 coated with the photoresist 116 to the wafer stage 112 and performing a predetermined etching process, The photoresist 116 detects heat generated when the photoresist 116 is burned by the resistance sensor 110 mounted inside the sensor, and changes the electrical resistance to electrical resistance. Here, although it is assumed that the wafer 114 is seated on the wafer stage 112, the wafer stage 112 may be expressed as being seated on the chuck 108 because it is part of the chuck 108.

여기서, 전기적인 저항치가 일정한 저항치를 초과하면, 설비 제어부(100)에 의하여 식각공정을 중단시킨다. 이러한 방법을 인터락(interlock)이라 한다. 즉, 저항치가 일정한 값을 초과하면, 설비를 자동적으로 중단시키는 것을 말한다. 이때, 일정한 저항치는 1 ~ 20 ㏁(mega Ω)이 바람직하다. 예를 들어 인터락되는 저항을 10 ㏁으로 설정한 경우에, 저항감지센서(110)에서 감지된 저항치가 10 ㏁을 초과하면, 설비 제어부(100)와 센서 제어부(104) 사이에 설정된 인터락에 의해 설비의 작동이 중단된다.Here, when the electrical resistance value exceeds a certain resistance value, the facility control unit 100 stops the etching process. This method is called interlock. In other words, when the resistance exceeds a certain value, the equipment is automatically stopped. At this time, the constant resistance value is preferably 1 ~ 20 ㏁ (mega Ω). For example, in the case where the interlocked resistance is set to 10 kV, and the resistance value detected by the resistance sensor 110 exceeds 10 kV, the interlock set between the facility control unit 100 and the sensor control unit 104 is applied to the interlock. The operation of the plant is stopped by this.

이상 본 발명을 상세히 설명하였으나, 본 발명은 상기한 실시예에 한정되지 않고 당업자에 의해 많은 변형 및 개량이 가능하다.Although the present invention has been described in detail above, the present invention is not limited to the above embodiments, and many modifications and improvements can be made by those skilled in the art.

상술한 본 발명에 의한 포토레지스트 연소 감지 장치 및 감지 방법에 따르면, 척의 내부에 포토레지스트의 연소에 의해 발생되는 열에 의한 웨이퍼의 온도변화를 감지하는 저항감지센서를 장착하여 사용함으로써 포토레지스트가 연소되는 것을 감지할 수 있다.According to the photoresist combustion detecting apparatus and the sensing method according to the present invention described above, the photoresist is burned by using a resistance sensor that detects a temperature change of the wafer due to heat generated by combustion of the photoresist inside the chuck. Can be detected.

Claims (6)

포토레지스트가 도포된 웨이퍼가 안착되는 척 및The chuck on which the photoresist-coated wafer is seated, and 상기 척의 내부에 장착되어 상기 웨이퍼의 온도변화에 의한 전기적인 저항을 감지하는 저항감지센서를 구비하는 것을 특징으로 하는 포토레지스트의 연소 감지장치.And a resistance sensor mounted on the inside of the chuck to sense electrical resistance caused by a temperature change of the wafer. 제1항에 있어서,The method of claim 1, 상기 저항감지센서에 일정한 시간간격으로 전류를 흘려보내고 상기 저항감지센서의 작동을 제어하는 센서 제어부를 더 구비하는 것을 특징으로 하는 포토레지스트의 연소 감지장치.And a sensor controller for sending a current to the resistance sensor at a predetermined time interval and controlling the operation of the resistance sensor. 제1항에 있어서,The method of claim 1, 상기 저항감지센서에 의해 감지된 저항치가 일정한 저항치를 초과하면, 식각공정을 멈추게 하는 설비 제어부를 더 구비하는 것을 특징으로 하는 포토레지스트의 연소 감지장치.And a facility controller for stopping the etching process when the resistance value detected by the resistance sensor exceeds a predetermined resistance value. 제3항에 있어서,The method of claim 3, 상기 일정한 저항치는 1 ~ 20 ㏁인 것을 특징으로 하는 포토레지스트의 연소 감지장치.Combustion sensing device of the photoresist, characterized in that the constant resistance value of 1 ~ 20 kPa. 포토레지스트가 도포된 웨이퍼를 척에 안착시키고 소정의 식각공정을 수행하는 데 있어서,In mounting the photoresist-coated wafer to the chuck and performing a predetermined etching process, 상기 포토레지스트가 연소시 발생되는 열에 의한 웨이퍼의 온도변화를 저항감지센서에 의해 감지하여 전기적인 저항치로 변화시키는 단계를 포함하는 포토레지스트의 연소 감지방법.And detecting the temperature change of the wafer due to heat generated when the photoresist is burned by a resistance sensor and changing the temperature to an electrical resistance value. 제5항에 있어서,The method of claim 5, 상기 전기적인 저항치가 일정한 저항치를 초과하면, 제어부에 의하여 식각공정을 중단시키는 단계를 더 포함하는 것을 특징으로 하는 포토레지스트 연소의 감지방법.And stopping the etching process by the controller if the electrical resistance exceeds a predetermined resistance.
KR1020010038156A 2001-06-29 2001-06-29 Apparatus for sensing photoresist burning and method using the same KR20030002511A (en)

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