KR20030000599A - Equipment for fabricating semiconductor with gas diverting system - Google Patents

Abstract

PURPOSE: A semiconductor fabrication apparatus having a gas diverting system is provided to measure flow of gas on a gas diverting line by using the gas diverting system. CONSTITUTION: An exhaust pump(210) is used for exhausting gas. The first and the second gas lines(202,204) are used for supplying processing gases. A gas diverting system(216) controls an initial gas. The first gas line(202) is connected with a gas supply source(200). A branched part of the first gas line(202) is connected with the second gas line(204) and the gas diverting system(216). The second gas line(204) is connected with a process chamber(206). A mass flow controller(212) is installed on the first gas line(202). The first and the second valves(V5,V6) are installed at a front side and a rear side of the mass flow controller(212). The third valve(V7) is installed on the second line(204). The gas diverting system(216) includes gas switching lines(208), the fourth valve(V8), and a gas flow sensor(214).

Description

Semiconductor manufacturing apparatus with gas conversion system {EQUIPMENT FOR FABRICATING SEMICONDUCTOR WITH GAS DIVERTING SYSTEM}

The present invention relates to a semiconductor manufacturing apparatus, and more particularly to a semiconductor manufacturing apparatus having a gas conversion system.

The manufacturing apparatus used for the semiconductor manufacturing process proceeds mainly using gas. Therefore, control of the pressure and flow rate of the gas supplied to the manufacturing apparatus in order to perform the optimal process conditions is one of the necessary elements. A semiconductor manufacturing apparatus for performing a process using gas includes a process chamber and a gas line. The process chamber is a place where a semiconductor substrate is installed to manufacture a semiconductor device. The gas lines are connected to supply a gas used in the manufacturing process into the process chamber. Therefore, gas control devices are provided in the semiconductor manufacturing apparatus to supply gas of a specific flow rate and pressure into the process chamber. In general, the gas line is provided with a shutoff valve and a control valve for blocking the gas delivered from the gas supply source, the gas is supplied into the process chamber while the valve is opened or adjusted when the manufacturing process starts. At this time, an over shoot phenomenon in which an excessive amount of gas is supplied due to the pressure difference before and after the valve at the time of opening the valve may occur, causing pressure fluctuation in the chamber. This may cause the process to be inhomogeneously and cause product defects. In order to solve this problem, the current manufacturing apparatus includes a digital type mass flow controller (MFC) and a gas divert line. Among these, the gas conversion line is a pipe that blocks the gas flowing into the process chamber for a predetermined time when the initial gas is introduced and supplies it to the pumping line. After a certain time, the process gas is introduced into the process chamber when the pressure and flow rate of the feed gas are stabilized.

1 is a schematic view for explaining a semiconductor manufacturing apparatus having a conventional gas conversion line.

Referring to FIG. 1, the conventional semiconductor manufacturing apparatus includes a process chamber 106 in which a process is performed, an exhaust pump 110 for discharging gas, first and second gas lines 102 and 104 for supplying process gas, and an initial gas. It includes a gas switching line 108 for controlling. The first gas line 102 connected to the gas supply source 100 is branched and connected to the second gas line 104 and the gas switching line 108. The second gas line 104 is connected to the process chamber 106 and the gas conversion line 108 is connected to the exhaust pump 110. The first gas line 102 includes a mass flow controller (MFC) 110 for controlling the flow rate of the process gas. Before and after the flow controller 110, the first and second valves (V1, V2) are installed to adjust the amount of gas introduced. A third valve V3 is installed in the second gas line 104 to adjust the amount of gas introduced into the process chamber, and a fourth valve V4 is installed in the gas switching line 108 to exhaust gas pump. The amount of gas exhausted by 100 is adjusted.

When the process is started, the process gas is supplied from the gas supply source 100 through the first gas line 102. At this time, the flow rate and pressure of the gas are controlled by the flow controller 112 and the first and second valves V1 and V2. At this time, the third valve (V3) is shut off, the fourth valve (V4) is opened so that the gas passing through the second valve (V2) through the gas switching line 108 for a predetermined time. To the pump 110. When the flow of gas is normally maintained, the fourth valve V4 is blocked and the third valve V3 is opened to allow the process gas to be supplied into the process chamber 106.

As shown, the conventional manufacturing apparatus does not have a means for measuring the flow of the gas discharged through the gas conversion line. Therefore, there is a problem in that the flow of gas proceeding to the exhaust pump 110 cannot be grasped. As a result, unstabilized gas can be supplied into the process chamber. As a result, the manufacturing process may be unstable. The occurrence of the abnormality during the process can be known by inspecting the thin film or pattern formed on the semiconductor substrate after the process is completed.

An object of the present invention is to provide a semiconductor manufacturing apparatus having a means for measuring the flow of gas in the gas conversion line in order to solve the above problems.

1 is a schematic diagram for explaining a semiconductor manufacturing apparatus having a conventional gas conversion line.

Figure 2 is a schematic diagram for explaining a semiconductor manufacturing apparatus having a gas conversion system according to a preferred embodiment of the present invention.

※ Explanation of code about main part of drawing ※

100,200: gas supply source 102,202: first gas line

104, 294: second gas line 106, 206: process chamber

108,208: gas conversion line 110,210: exhaust pump

112,212: flow controller V1, V5: first valve

V2, V6: second valve V3, V7: third valve

V4, V8: 4th valve 214: flow meter

216: gas conversion system

In order to achieve the above object, the present invention provides a semiconductor manufacturing apparatus having a gas conversion system. The apparatus includes a gas supply source, a first gas line, a second gas line, a gas conversion system, an exhaust pump and a process chamber. One end of the first gas line is connected to the gas supply source, and the other end of the first gas line is branched to be connected to the second gas line and the gas switching system. The second gas line transfers the process gas introduced from the first gas line to the process chamber, and the gas conversion system delivers the process gas introduced from the first gas line to the exhaust pump. The gas switching system includes a gas regulating means and a flow rate measuring means installed in the gas switching line.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments introduced herein are provided to ensure that the disclosed subject matter is thorough and complete, and that the scope of the invention to those skilled in the art will fully convey.

Figure 2 is a schematic diagram for explaining a semiconductor manufacturing apparatus having a gas conversion system according to a preferred embodiment of the present invention.

2, the apparatus controls the process chamber 206, the exhaust pump 210 for discharging the gas, the first and second gas lines 202 and 204 for supplying the process gas, and the initial gas. Gas conversion system 216. The first gas line 202 connected to the gas supply source 200 is branched and connected to the second gas line 204 and the gas switching system 216. The second gas line 204 is connected to the process chamber 206 and a mass flow controller (MFC) 212 is installed in the first gas line 202 to control the flow rate of the process gas. First and second valves V5 and V6 are installed before and after the flow controller 212 to adjust the amount of gas. A third valve V7 is installed in the second gas line 204 to adjust the flow of gas introduced into the process chamber 206. The gas switching system 216 includes a gas switching line 208 connected to the first gas line 202, a fourth valve V8 installed in the gas switching line 208, and a flow rate measuring device 214. . The fourth valve V8 regulates the flow of gas flowing into the gas switching line 208. Unlike the prior art, in the semiconductor manufacturing apparatus of the present invention, a gas flow sensor 214 for measuring the amount of gas flowing through the gas switching line 208 is installed in the gas switching line 208. . The flow measuring means may be, for example, a mass flow meter (MFM).

When the process is started, the process gas is supplied from the gas supply source 200 through the first gas line 202. At this time, the flow rate and pressure of the gas are controlled by the flow controller 212 and the first and second valves V5 and V6. At this time, the third valve V7 is shut off, and the fourth valve V8 is opened so that the gas passing through the second valve V6 is exhausted through the gas switching line 208 for a predetermined time. To the pump 210. At this time, the amount of gas passing through the gas conversion line 208 is measured by the flow rate measuring device 214. The fourth valve V8 is shut off when the flow of the gas is kept constant by measuring the amount of gas flowing in the gas switching line 208 in real time. At the same time, the third valve V7 is opened to allow the process gas to be supplied into the process chamber 206. Since the flow rate measuring device 214 can measure the amount of gas passing through the gas conversion line 208, it is possible to quickly detect the malfunction of the unstable initial gas flowing into the process chamber 206. .

As described above, according to the present invention, the amount of gas flowing through the gas switching line may be measured while discharging through the gas switching line so that the unstable initial gas does not flow into the process chamber. Accordingly, the problem that the unstable initial gas is not converted to the gas conversion line can be measured early.

Claims (4)

A semiconductor manufacturing apparatus comprising a gas supply source, a first gas line, a second gas line, a gas conversion system, an exhaust pump, and a process chamber, One end of the first gas line is connected to the gas supply source, The other end of the first gas line is branched and connected to the second gas line and the gas switching system, One end of the second gas line is connected to the process chamber, One end of the gas switching system is connected to the exhaust pump, the gas switching system comprises a gas switching line connected to the first gas line, gas opening and closing means and flow rate measuring means installed in the gas switching line Semiconductor manufacturing apparatus. According to claim 1, A first valve and a second valve installed in the first gas line; and And a mass flow controller (MFC) installed in the first gas line between the first valve and the second valve. According to claim 1, And a third valve installed in the second gas line. According to claim 1, The gas opening and closing means is characterized in that the fourth valve installed in the gas switching line, And said flow rate measuring means is a mass flow meter (MFM) installed in said gas switching line before or after said gas adjusting means.