KR20020091460A - Thin film transistor liquid crystal display - Google Patents

Abstract

PURPOSE: Thin film transistors of a liquid crystal display device is provided to prevent the remaining of any residual metals for preventing the electric defects by forming a conductive layer pattern between gate lines and common electrodes lines. CONSTITUTION: Thin film transistor of a liquid crystal display device include a conductive layer pattern(103) formed between gate lines(101) and common electrode lines(102), wherein an interval between the gate lines and the conductive layer pattern, and between the common electrode lines and the conductive layer pattern is 5micrometers or less and an interval between the gate lines and the common electrodes lines is 15micrometers or less, and the gate lines, the common electrode lines and the conductive layer pattern are formed simultaneously with a same material.

Description

Thin film transistor of liquid crystal display device {THIN FILM TRANSISTOR LIQUID CRYSTAL DISPLAY}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to thin film transistors of liquid crystal display devices, and more particularly, to thin film transistors of liquid crystal display devices capable of increasing yield and aperture ratio.

Liquid crystal displays (LCDs) used in display devices such as televisions and graphic displays have been developed in place of the CRT (Cathod-Ray Tube).

In particular, TFT LCDs equipped with thin film transistors (TFTs) for each pixel arranged in a matrix form have high-speed response characteristics and are suitable for high pixel numbers. Etc. are realized.

In general, a TFT LCD consists of a lower substrate having TFTs and pixel electrodes formed in each pixel arranged in a matrix form, an upper electrode having a color filter and a counter electrode formed therein, and a liquid crystal filled between the lower substrate and the upper substrate. In a TFT LCD, a liquid crystal is driven according to a voltage applied to a pixel electrode and a counter electrode to display a predetermined image.

On the other hand, in order to improve the display screen quality in the TFT LCD, it is necessary to keep the voltage of the first signal applied through the data line constant until the second signal is transmitted. Auxiliary capacitance Cst is formed on the substrate.

Here, the storage capacitor is formed by a storage on gate method of forming a storage capacitor by extending a predetermined portion of the gate line and a common electrode line independent of the gate line. There is a Storage On Common method.

Hereinafter, a thin film transistor of a conventional liquid crystal display device will be described with reference to the accompanying drawings.

1 is a layout diagram illustrating a thin film transistor of a liquid crystal display device of a conventional storage on gate type.

As shown in FIG. 1, in the lower substrate of the TFT LCD, a plurality of gate lines 2 and a plurality of data lines 4 are formed on the organic substrate 1 so as to be perpendicular to each other. A storage capacitor electrode 3 protruding from the gate line 2 is formed in a predetermined portion. At this time, the storage capacitor electrode 3 is formed in the pixel region 7 partitioned by the gate line 2 and the data line 4.

Although not shown, a gate insulating film is formed between the gate line 2 and the data line 4 for the purpose of electrical insulation therebetween.

Subsequently, a TFT 10 is formed to independently control the driving of each pixel near the intersection of the gate line 2 and the data line 4.

Here, the TFT 10 includes a gate electrode which is a part of the gate line 2, a gate insulating film (not shown) formed on the gate electrode, and a semiconductor formed in the form of a pattern on the gate insulating film. And a source / drain electrode 4a and 4b formed on the layer 5 and the semiconductor layer 5 at predetermined intervals.

That is, the source / drain electrodes 4a and 4b are formed together with the source electrode 4a and the drain electrode 4b so as to overlap one side and the other upper part of the semiconductor layer 5 when the data line 4 is formed. . In this case, the drain electrode 4b is formed to protrude from the data line 4, and the source electrode 4a is spaced apart from the drain electrode 4b to be in contact with the pixel electrode 7.

In the pixel region, a pixel electrode 7 made of a transparent metal such as indium tin oxide (ITO) is formed.

Therefore, the storage capacitor Cst is formed between the storage capacitor electrode 3 and the pixel electrode 7.

2 is a layout diagram illustrating a thin film transistor of a storage on common type liquid crystal display device.

As shown in FIG. 2, in the lower substrate of the TFT LCD, a plurality of gate lines 2 formed on the glass substrate 1 and the common electrode line 6 are independently between the adjacent gate lines 2. Is formed. Although not shown, a gate insulating film is formed on the gate line 2 and the common electrode line 6.

In this case, the gate line 2 and the common electrode line 6 should be maintained at a constant distance, and the short generation rate between the gate line and the common electrode line changes according to the distance.

A data line 4 is formed on the gate insulating film so as to be orthogonal to the gate line 2 and the common electrode line 6, and a TFT 10 is formed near the intersection of the gate line 2 and the data line 4. do.

Here, the TFT 10 includes a gate electrode which is a part of the gate line 2, a gate insulating film (not shown) formed on the gate electrode, and a semiconductor formed in the form of a pattern on the gate insulating film. And a source / drain electrode 4a and 4b formed on the layer 5 and the semiconductor layer 5 at predetermined intervals.

That is, the source / drain electrodes 4a and 4b are formed together with the source electrode 4a and the drain electrode 4b so as to overlap one side and the other upper part of the semiconductor layer 5 when the data line 4 is formed. . In this case, the drain electrode 4b is formed to protrude from the data line 4, and the source electrode 4a is spaced apart from the drain electrode 4b to be in contact with the pixel electrode 7.

Further, a pixel electrode 7 made of a transparent metal such as indium tin oxide (ITO) is formed in the pixel region.

Therefore, the storage capacitor Cst is formed between a portion of the common electrode line 6 formed in the pixel region and the pixel electrode 6.

However, the conventional method of manufacturing the thin film transistor of the liquid crystal display device as described above has the following problems.

That is, when the distance between the gate line and the common electrode line is 20 μm or less, electrical defects of several percent occur.

On the other hand, in order to maintain the distance between the gate line and the common electrode line of 20 µm or more, the aperture ratio is reduced to reduce the overall luminance of the panel.

The present invention has been made to solve the above problems, to provide a method for manufacturing a thin film transistor of the liquid crystal display device which can improve the yield and the aperture ratio by preventing the presence of residual metal between the gate line and the common electrode line. The purpose is.

1 is a layout diagram showing a thin film transistor of a conventional storage on gate type liquid crystal display device.

2 is a layout diagram illustrating a thin film transistor of a storage on common liquid crystal display device;

3 is a layout diagram illustrating a thin film transistor of a storage on common liquid crystal display device according to an exemplary embodiment of the present invention.

4 is a layout diagram illustrating a thin film transistor of a storage on common liquid crystal display device according to another exemplary embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

100: glass substrate 101: gate line

102: common electrode line 103: conductive layer pattern

104: data lines 104a, 104b: source / drain electrodes

105: semiconductor layer 106: transparent conductive film

107: pixel electrode 108: transparent pattern

110: TFT

The thin film transistor of the liquid crystal display device of the present invention for achieving the above object is a glass substrate, a plurality of gate lines formed on the glass substrate, a common electrode line formed between the adjacent gate line, common with the gate line A gate insulating film formed on the entire surface including an electrode line, a plurality of data lines formed on the gate insulating film so as to be perpendicular to the gate line and the common electrode line, a pixel electrode formed in a pixel region defined by the gate line and the data line, A lower substrate of a TFT LCD including a TFT formed near an intersection point of the gate line and the data line, characterized in that the conductive layer pattern is formed between the gate line and the common electrode line.

The gap between the gate line and the conductive layer pattern and the common electrode line and the conductive layer pattern may be maintained at 5 μm or less.

In addition, the conductive layer pattern is the same as the material of the gate line and the common electrode line.

In addition, the distance between the gate line and the common electrode line is maintained at 15㎛ or less.

The gate line, the common electrode line, and the conductive layer pattern may be formed at the same time.

On the other hand, the thin film transistor of the liquid crystal display device according to another embodiment of the present invention is a glass substrate, a transparent conductive film formed in a predetermined region on the glass substrate, a plurality of gate lines formed on the glass substrate, between the adjacent gate line A common electrode line formed on the gate electrode; a gate insulating film formed on the entire surface including the gate line and the common electrode line; a plurality of data lines formed on the gate insulating film so as to be perpendicular to the gate line and the common electrode line; A lower substrate of a TFT LCD comprising a pixel electrode formed in a pixel region defined by a line, and a TFT formed near an intersection point of the gate line and a data line, wherein the gate line and the common electrode line and between the pixel electrode and the common electrode line A plurality of conductive layer patterns formed between, the transparent conductive film and the crab It characterized by a pattern constituted by any transparent formed between the bit lines.

In addition, the transparent conductive film, the pixel electrode and the transparent pattern is characterized in that the ITO material.

In addition, the transparent conductive film and the transparent pattern is characterized in that formed at the same time.

In addition, the conductive layer pattern is the same as the material of the gate line and the common electrode line.

In addition, the transparent conductive film, the pixel electrode and the common electrode line is characterized in that the one side is directly connected to have the same electric potential.

Hereinafter, a thin film transistor of a liquid crystal display device according to an exemplary embodiment of the present invention will be described in detail with reference to the accompanying drawings.

3 is a layout diagram illustrating a thin film transistor of a storage on common liquid crystal display device according to an exemplary embodiment of the present invention.

As shown in FIG. 3, in the lower substrate of the TFT LCD, a plurality of gate lines 101 are formed on the glass substrate 100, and at the same time, the common electrode line 102 is independently between the adjacent gate lines 101. Is formed.

At the same time, a conductive layer pattern 103 is formed between the gate line 101 and the common electrode line 102. In this case, the gate line 101, the common electrode line 102, and the conductive layer pattern 103 are formed of the same material.

Although not shown, a gate insulating film is formed on the gate line 101, the common electrode line 102, and the conductive layer pattern 103.

In this case, the gate line 101 and the common electrode line 102 maintain a distance of 15 μm or less. The gate line 101, the conductive layer pattern 103, and the common electrode line 102 and the conductive layer pattern 103 maintain a distance of 5 μm or less.

A data line 104 is formed on the gate insulating layer so as to be orthogonal to the gate line 101 and the common electrode line 102, and a TFT 110 is formed near an intersection point of the gate line 101 and the data line 104. do.

The TFT 110 may include a gate electrode that is a part of the gate line 101, a gate insulating film (not shown) formed on the gate electrode, and a semiconductor formed in a pattern on the gate insulating film. The layer 105 and the source / drain electrodes 104a and 104b are formed on the semiconductor layer 105 at predetermined intervals.

In other words, the source / drain electrodes 104a and 104b may be formed together with the source electrode 104a and the drain electrode 104b so that the source / drain electrodes 104a and 104b overlap with one side and the other upper portion of the semiconductor layer 105 when the data line 104 is formed. . In this case, the drain electrode 104b is formed to protrude from the data line 104, and the source electrode 104a is formed to be in contact with the pixel electrode 107 while being spaced apart from the drain electrode 104b.

Further, a pixel electrode 107 made of a transparent metal such as indium tin oxide (ITO) is formed in the pixel region.

Therefore, the storage capacitor Cst is formed between a portion of the common electrode line 102 formed in the pixel region and the pixel electrode 107.

4 is a layout diagram illustrating a thin film transistor of a storage on common liquid crystal display device according to another exemplary embodiment of the present invention.

As shown in FIG. 4, in the lower substrate of the TFT LCD, a transparent conductive film 106 is formed in a predetermined region on the glass substrate 100 and a transparent pattern 108 is formed.

In addition, a plurality of gate lines 101 are formed on the glass substrate 100, and a common electrode line 102 is independently formed between the adjacent gate lines 101. At the same time, a conductive layer pattern 103 is formed between the gate line 101 and the common electrode line 102.

In this case, the transparent pattern 108 is formed between the transparent conductive film 106 and the gate line 101, the gate line 101, the common electrode line 102 and the conductive layer pattern 103 is the same material Is formed.

Although not illustrated, a gate insulating layer is formed on the gate line 101 and the common electrode line 102.

Meanwhile, the gate line 101 and the common electrode line 102 maintain a distance of 15 μm or less. The gate line 101, the conductive layer pattern 103, and the common electrode line 102 and the conductive layer pattern 103 maintain a distance of 5 μm or less.

A data line 104 is formed on the gate insulating film so as to be orthogonal to the gate line 101 and the common electrode line 102, and a TFT 110 is formed near an intersection point of the gate line 101 and the data line 102. do.

The TFT 110 may include a gate electrode that is a part of the gate line 101, a gate insulating film (not shown) formed on the gate electrode, and a semiconductor formed in a pattern on the gate insulating film. The layer 105 and the source / drain electrodes 104a and 104b are formed on the semiconductor layer 105 at predetermined intervals.

In other words, the source / drain electrodes 104a and 104b may be formed together with the source electrode 104a and the drain electrode 104b so that the source / drain electrodes 104a and 104b overlap with one side and the other upper portion of the semiconductor layer 105 when the data line 104 is formed. . In this case, the drain electrode 104b is formed to protrude from the data line 104, and the source electrode 104a is formed to be spaced apart from the drain electrode 104b to be in contact with the pixel electrode.

Further, a pixel electrode 107 made of a transparent metal such as indium tin oxide (ITO) is formed in the pixel region.

The pixel electrode 107, the transparent conductive film 106, and the transparent pattern 108 are formed of the same material.

In addition, one side of the transparent conductive film 106, the pixel electrode 107, and the common electrode line 102 is directly connected to have the same electric potential.

Therefore, the storage capacitor Cst is formed between a portion of the common electrode line 102 formed in the pixel region and the pixel electrode 107.

As described above, according to the thin film transistor of the liquid crystal display device of the present invention, since the conductive layer pattern is formed between the gate line and the common electrode line, the residual metal generated during the process can be prevented from remaining to prevent electrical defects. .

Therefore, the yield of the liquid crystal display device can be improved, and the distance between the signal lines can be reduced, thereby increasing the aperture ratio.

Claims (10)

Glass substrates; A plurality of gate lines formed on the glass substrate; A common electrode line formed between the adjacent gate lines; A gate insulating film formed on the entire surface including the gate line and the common electrode line; A plurality of data lines formed on the gate insulating layer to be perpendicular to the gate line and the common electrode line; A pixel electrode formed in the pixel region defined by the gate line and the data line; In the lower substrate of the TFT LCD including a TFT formed near the intersection of the gate line and the data line, A thin film transistor of a liquid crystal display device, characterized in that the conductive layer pattern formed between the gate line and the common electrode line. The method of claim 1, The thin film transistor of the liquid crystal display device, wherein the gap between the gate line, the conductive layer pattern, and the common electrode line and the conductive layer pattern is maintained at 5 μm or less. The method of claim 1, The conductive layer pattern is a thin film transistor of the liquid crystal display device, characterized in that the same material as the gate line and the common electrode line. The method of claim 1, And the distance between the gate line and the common electrode line is 15 μm or less. The method of claim 1, And the gate line, the common electrode line, and the conductive layer pattern are formed at the same time. Glass substrates; A transparent conductive film formed on a predetermined region on the glass substrate; A plurality of gate lines formed on the glass substrate; A common electrode line formed between the adjacent gate lines; A gate insulating film formed on the entire surface including the gate line and the common electrode line; A plurality of data lines formed on the gate insulating layer to be perpendicular to the gate line and the common electrode line; A pixel electrode formed in the pixel region defined by the gate line and the data line; In the lower substrate of the TFT LCD including a TFT formed near the intersection of the gate line and the data line, A plurality of conductive layer patterns formed between the gate line and the common electrode line and between the pixel electrode and the common electrode line; And a transparent pattern formed between the transparent conductive film and the gate line. The method of claim 6, And the transparent conductive film, the pixel electrode, and the transparent pattern are made of ITO material. The method of claim 6, The thin film transistor of the liquid crystal display device, characterized in that the transparent conductive film and the transparent pattern is formed at the same time. The method of claim 6, The conductive layer pattern is a thin film transistor of the liquid crystal display device, characterized in that the same material as the gate line and the common electrode line. The method of claim 6, The transparent conductive film, the pixel electrode and the common electrode line is a thin film transistor of the liquid crystal display device, characterized in that one side is directly connected to have the same potential.