KR20020085073A - Spin type wet cleaning device - Google Patents

Spin type wet cleaning device Download PDF

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Publication number
KR20020085073A
KR20020085073A KR1020010024341A KR20010024341A KR20020085073A KR 20020085073 A KR20020085073 A KR 20020085073A KR 1020010024341 A KR1020010024341 A KR 1020010024341A KR 20010024341 A KR20010024341 A KR 20010024341A KR 20020085073 A KR20020085073 A KR 20020085073A
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South Korea
Prior art keywords
wafer
wafers
bath
wet cleaning
chemical
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KR1020010024341A
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Korean (ko)
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KR100422911B1 (en
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최영근
이봉기
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아남반도체 주식회사
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Priority to KR10-2001-0024341A priority Critical patent/KR100422911B1/en
Publication of KR20020085073A publication Critical patent/KR20020085073A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE: A rotary wet cleaning apparatus is provided to remove effectively a photoresist layer from a wafer and reduce a size of the rotary wet cleaning apparatus for wafer. CONSTITUTION: A plurality of wafers(10) are arranged in a cassette. The wafers(10) are extracted and inverted from the cassette. The wafers(10) are inserted into a chemical bath(50) by using a chuck(30) of a wafer loading portion(20). The wafers(10) are rotated within the chemical bath(50) by operating a rotary bar(40a) installed on an upper portion of a chuck(30) of a wafer loading portion(20). The wafers(10) are extracted from the chemical bath(50). The wafers(10) are inserted into a washing bath. The wafers(10) are rotated within the washing bath by operating the rotary bar(40a). The wafers are extracted from the washing bath. The wafers(10) are inserted into a drier. The wafers(10) are loaded on a wafer support plate. The wafers(10) are rotated and dried by operating a rotary bar installed at a lower portion of the wafer support bar.

Description

회전식 습식 세정장치 {Spin type wet cleaning device}Spin type wet cleaning device

본 발명은 반도체 소자의 제조장치에 관한 것으로, 더욱 상세하게는 회전식 습식 세정장치에 관한 것이다.The present invention relates to a device for manufacturing a semiconductor device, and more particularly to a rotary wet cleaning device.

웨이퍼의 세정 공정은 반도체 제조 공정 중에서 웨이퍼 상에 박막을 증착하기 전의 전처리나, 또는 이온 주입 및 식각의 후처리로서 많이 이루어지고 있다.The wafer cleaning process is often performed as a pretreatment before depositing a thin film on a wafer or as a post treatment of ion implantation and etching in a semiconductor manufacturing process.

그 중에서 특히 패턴 형성공정에서 웨이퍼의 상면에 감광막을 도포한 상태에서 마스크를 이용하여 노광하고 현상 및 애슁(ashing)공정을 거친 후에는 웨이퍼의 상면에 잔류하고 있는 감광막을 제거하기 위한 웨이퍼 세정공정이 필수적으로 이루어진다.Among them, a wafer cleaning process for removing the photoresist remaining on the upper surface of the wafer after exposure using a mask and a developing and ashing process in a state in which the photoresist is applied on the upper surface of the wafer in the pattern forming process is performed. It is essential.

반도체 소자가 고집적화 되어가면서 이러한 웨이퍼 세정공정은 더 많이 이루어지며, 또한 패턴이 미세해짐에 따라서 세정공정으로도 제거되지 않고 잔류하는 오염 또는 잔류 감광막의 허용 범위는 좁아지기 때문에 세정 공정의 중요성은 더욱 높아지고 있다. 특히, 반도체 소자의 집적도가 높은 배선 치수가 축소되면 미량의 잔류 감광막이 이후에 결함이 되어 단선이나 쇼트(short) 등의 불량 원인이 되어 수율 저하의 원인이 된다.As semiconductor devices become more integrated, these wafer cleaning processes are more and more, and as the pattern becomes finer, the cleaning process becomes more important because the tolerances of residual contamination or residual photoresist film are not removed even by the cleaning process. have. In particular, when the wiring dimension having a high degree of integration of the semiconductor element is reduced, a small amount of the residual photoresist film becomes a defect later, which causes a defect such as disconnection or short, which causes a decrease in yield.

현재, 오염 제거 성능 면에서 실용적인 세정 방법은 웨이퍼를 배스(bath) 내에 담그어 세정하는 습식 세정방법이다. 이 방법은 웨이퍼를 약액 배스, 수세 배스, 건조기에 넣고 순서대로 처리해 가는 것이다. 즉, 약액 배스에서 약품처리하여 웨이퍼로부터 오염을 제거하고, 수세 배스에서 웨이퍼에 잔류된 약품을 순수(純水)로 희석시킨 후, 건조기에서 건조하여 청정한 실리콘 표면을 얻는다.Currently, a practical cleaning method in terms of decontamination performance is a wet cleaning method in which a wafer is immersed in a bath to be cleaned. In this method, the wafer is placed in a chemical bath, a flush bath, and a dryer, and processed sequentially. That is, the chemical treatment in the chemical bath removes the contamination from the wafer, and the chemical residue remaining on the wafer in the washing bath is diluted with pure water, and then dried in a dryer to obtain a clean silicon surface.

약액 배스에서 약품처리하는 과정을 예로 들어 설명하면 다음과 같다. 약액 배스 내에서 60~80℃로 온도를 올린 암모니아과산화수소수(NH4OH/H2O2/H2O) 및 염산과산화수소수(HCl/H2O2/H2O)에 웨이퍼를 각각 10분 정도씩 담그고 마지막으로 희석 불산(HF)로 화학적 산화막을 제거하여 청정한 실리콘 표면을 얻는다.For example, the process of chemical treatment in the chemical bath is as follows. Place wafers in ammonia hydrogen peroxide solution (NH 4 OH / H 2 O 2 / H 2 O) and hydrogen peroxide solution (HCl / H 2 O 2 / H 2 O), each heated to 60-80 ° C in the chemical bath. Dip in minutes and finally remove the chemical oxide with dilute hydrofluoric acid (HF) to get a clean silicon surface.

이와 같이 약액 배스에서 사용하는 약품은 일정 온도로 승온하여 유지하는 것이 필요하며, 종래기술에서는 약액 배스에 웨이퍼를 담그고 히터를 통해 순환하면서 설정된 온도가 유지되는 약품에 웨이퍼를 접촉시킨다.As such, the chemicals used in the chemical bath are required to be heated and maintained at a predetermined temperature. In the related art, the wafer is contacted with the chemicals that maintain the set temperature while immersing the wafer in the chemical bath and circulating through the heater.

도 1은 종래 습식 세정장치의 단면도로서, 약액 배스(1)에서 약품처리하여 웨이퍼 상면의 감광막을 제거하는 공정이 도시되어 있다. 도 1에 도시된 바와 같이, 웨이퍼(2)는 로딩장치에 의해 이동되어 배스(1) 내의 약품 내에 담그어지고, 이 때 약액(3)은 히터(H)를 통해 설정된 온도로 유지되고 펌프(P) 및 필터(F)를 거쳐 여과되면서 감광막을 제거한다.1 is a cross-sectional view of a conventional wet cleaning apparatus, in which a chemical treatment is performed in a chemical bath 1 to remove a photoresist film on an upper surface of a wafer. As shown in FIG. 1, the wafer 2 is moved by a loading apparatus to be immersed in the chemical in the bath 1, at which time the chemical liquid 3 is maintained at the set temperature through the heater H and the pump P ) And the photosensitive film is removed while filtering through the filter (F).

이러한 약액 배스에서의 약품처리 후에는 로봇(robot)이 웨이퍼를 집어올려 수세 배스 및 건조기에서 순차적으로 처리함으로써 웨이퍼를 세정한다.After the chemical treatment in such a chemical bath, the robot picks up the wafer and sequentially processes it in a washing bath and a dryer to clean the wafer.

또 다른 종래 습식 세정방법으로는 다수의 웨이퍼가 일렬로 배열된 카세트를 회전시키면서 약품을 스프레이하는 방식이 있다.Another conventional wet cleaning method is a method of spraying a chemical while rotating a cassette in which a plurality of wafers are arranged in a row.

그러나, 이러한 종래 방법에서는 모든 웨이퍼가 동일한 배스를 통과하기 때문에 한 배스가 오염되면 그 배스에 계속 투입되는 다른 웨이퍼도 오염되고, 한 웨이퍼의 후면에서 이웃하는 웨이퍼의 전면으로 오염이 전달되는 등, 이른바 상호 오염(cross-contamination)이 자주 발생하는 문제점이 있었다.However, in this conventional method, since all wafers pass through the same bath, when one bath is contaminated, other wafers that are continuously introduced into the bath are also contaminated, and contamination is transferred from the back of one wafer to the front of the neighboring wafer. Cross-contamination has often been a problem.

또한, 약품이 웨이퍼를 거치는 경로가 짧기 때문에 순간적으로 웨이퍼와 접촉하는 약품의 양이 적어서 감광막이 제거되지 않을 가능성이 많은 문제점이 있다.In addition, since the path through which the chemical passes through the wafer is short, there is a problem that there is a possibility that the photosensitive film is not removed due to the small amount of chemical contacting the wafer instantaneously.

한편, 습식 세정 장비는 장비전체의 크기, 순수, 약액, 가스 등의 사용량, 폐기물, 배기 등의 배출량이 상당히 커서 반도체 공장의 설비 계획에 커다란 영향을 미치기 때문에, 최근 이들의 비용절감에 대한 요구가 강해지고 있다. 특히, 웨이퍼가 대구경화되면서 장비의 크기가 커지고 또한 사용되는 약품의 양도 많아지면서 비용이 상승되고 있다.On the other hand, wet scrubbing equipment has a large impact on equipment planning of semiconductor factories because the size of the entire equipment, the amount of pure water, chemical liquids, gas, etc., the amount of waste, exhaust, etc. are so large that it has a great impact on their cost reduction in recent years. It is getting stronger. In particular, as the size of wafers increases, the size of equipment increases and the amount of chemicals used increases.

따라서, 현재 대구경화된 웨이퍼용 습식 세정 장비의 크기 감소가 절실히 요청되고 있다.Therefore, there is an urgent need to reduce the size of the wet cleaning equipment for large diameter wafers.

본 발명은 상기한 바와 같은 문제점을 해결하기 위한 것으로, 그 목적은 웨이퍼로부터 감광막 제거효과를 극대화시키고, 대구경화되는 웨이퍼용 습식 세정장치의 크기를 감소시키는 데 있다.The present invention is to solve the problems as described above, the object is to maximize the removal effect of the photoresist film from the wafer, and to reduce the size of the wet cleaning apparatus for large-sized wafer.

도 1은 종래 습식 세정장치의 단면도이다.1 is a cross-sectional view of a conventional wet cleaning device.

도 2는 본 발명에 따른 회전식 습식 세정장치의 단면도이다.2 is a cross-sectional view of a rotary wet cleaning device according to the present invention.

도 3은 본 발명에 따른 회전식 습식 세정장치의 건조기를 도시한 단면도이다.Figure 3 is a cross-sectional view showing the dryer of the rotary wet cleaning apparatus according to the present invention.

상기한 바와 같은 목적을 달성하기 위하여, 본 발명에서는 웨이퍼를 습식 세정장치의 배스로 이동시키는 웨이퍼 로딩부에 회전봉을 설치하여 약액 배스 및 수세 배스 내에서의 웨이퍼 처리공정 동안에 웨이퍼를 회전시키는 것을 특징으로 한다.In order to achieve the object as described above, the present invention is characterized by rotating the wafer during the wafer processing process in the chemical liquid bath and flush bath by installing a rotary rod in the wafer loading portion for moving the wafer to the bath of the wet cleaning device. do.

또한, 건조기 내의 웨이퍼 받침대에도 회전봉을 설치하여 웨이퍼를 회전시키면서 건조시키는 것이 바람직하다.In addition, it is preferable to provide a rotating rod to the wafer pedestal in the dryer and to dry the wafer while rotating the wafer.

이하, 첨부된 도면을 참조하여 본 발명에 따른 회전식 습식 세정장치의 구성에 대해 상세히 설명한다.Hereinafter, with reference to the accompanying drawings will be described in detail the configuration of the rotary wet cleaning device according to the present invention.

일반적으로 웨이퍼 로딩부에서는 척(chuck)을 이용하여 진공 또는 기계적으로 웨이퍼의 후면을 잡고 그 웨이퍼를 약액 배스 또는 수세 배스 내로 이동시켜 배스 내의 약액 또는 순수 내에 웨이퍼를 담근다.In general, the wafer loading unit uses a chuck to vacuum or mechanically hold the back side of the wafer and move the wafer into a chemical bath or flush bath to soak the wafer in the chemical or pure water in the bath.

도 2는 본 발명에 따른 회전식 습식 세정장치의 단면도이다. 도 2에 도시된 바와 같이, 본 발명에 따른 회전식 습식 세정장치에서는 세정공정 중에 웨이퍼(10)를 회전시키도록 웨이퍼 로딩부(20)의 척(30) 상부에 회전봉(40a)이 설치되어 있고, 회전봉(40)의 회전동력을 제공하는 모터(미도시)가 설치되어 있다.2 is a cross-sectional view of a rotary wet cleaning device according to the present invention. As shown in FIG. 2, in the rotary wet cleaning apparatus according to the present invention, a rotating rod 40a is installed on the chuck 30 of the wafer loading unit 20 to rotate the wafer 10 during the cleaning process. A motor (not shown) is provided to provide rotational power of the rotating rod 40.

건조기 내에서 웨이퍼를 건조하는 동안에도 웨이퍼를 회전시키는 것이 바람직하다. 도 3은 본 발명에 따른 습식 세정장치의 건조기를 도시한 단면도로서, 이에 도시된 바와 같이, 건조기(60) 내부의 웨이퍼 받침대(70) 하부에 회전봉(40b)이 설치되어 있다.It is also desirable to rotate the wafer while drying the wafer in the dryer. 3 is a cross-sectional view illustrating a dryer of the wet cleaning apparatus according to the present invention, and as shown therein, a rotating rod 40b is installed below the wafer pedestal 70 inside the dryer 60.

이하, 첨부된 도면을 참조하여 본 발명에 따른 회전식 습식 세정장치의 작용에 대해 상세히 설명한다.Hereinafter, with reference to the accompanying drawings will be described in detail the operation of the rotary wet cleaning device according to the present invention.

도 2 및 3에 도시된 바와 같이, 본 발명에 따른 습식 세정장치에서는 웨이퍼 로딩부로 웨이퍼를 1장씩 잡고 습식 세정공정을 수행한다.As shown in Figures 2 and 3, in the wet cleaning apparatus according to the present invention, the wafer loading unit holds the wafers one by one and performs a wet cleaning process.

먼저, 다수개의 웨이퍼가 배열되어 있는 카세트로부터 웨이퍼(10)를 추출하여 반전하고 웨이퍼 로딩부(20)의 척(30)을 이용하여 진공 또는 기계적으로 웨이퍼(10)의 후면을 잡고 약액 배스(50)에 웨이퍼(10)를 투입한다.First, the wafer 10 is extracted and inverted from a cassette in which a plurality of wafers are arranged, and the back side of the wafer 10 is grasped by vacuum or mechanically using the chuck 30 of the wafer loading unit 20. ) Into the wafer 10.

다음, 웨이퍼(10)를 잡은 상태에서 회전봉(40a)을 작동하여 약액 배스(50) 내에서 약품처리되는 동안에 웨이퍼(10)를 회전시킨다. 이 때 웨이퍼가 회전하기 때문에 약품과 접촉하는 경로가 길어져서 감광막의 제거효과가 극대화된다.Next, the rotary rod 40a is operated while the wafer 10 is held to rotate the wafer 10 during chemical treatment in the chemical bath 50. At this time, since the wafer rotates, the path of contact with the chemical becomes longer, thereby maximizing the removal effect of the photoresist film.

다음, 약품처리과정이 종료되면 웨이퍼(10)를 약액 배스로부터 꺼내어 수세 배스로 투입하고, 동일한 방법으로 수세 배스 내에서도 웨이퍼를 회전시키면서 세정한다.Next, when the chemical treatment process is completed, the wafer 10 is taken out of the chemical bath and put into a washing bath, and the wafer is washed in the washing bath while rotating in the same manner.

다음, 수세과정이 종료되면 웨이퍼(10)를 수세 배스로부터 꺼내어 건조기(60) 내로 투입하여 웨이퍼 받침대(70) 위에 웨이퍼(10)를 마운트시킨다. 다음 받침대(70) 하부에 설치된 회전봉(40b)을 작동하여 웨이퍼를 회전시키면서 건조시킴으로써, 습식 세정공정을 완료한다.Next, when the washing process is completed, the wafer 10 is taken out of the washing bath and introduced into the dryer 60 to mount the wafer 10 on the wafer pedestal 70. Next, by operating the rotating rod 40b installed under the pedestal 70 to dry the wafer while rotating, the wet cleaning process is completed.

상기한 바와 같이 본 발명에 따른 회전식 습식 세정장치를 이용하면, 약액 배스 내에서의 약품처리과정 중에 웨이퍼가 회전하여 약액과 웨이퍼 상면의 감광막이 접촉하는 경로가 대폭적으로 길어지므로 감광막의 제거효율이 극대화되는 효과가 있다.As described above, when the rotary wet cleaning device according to the present invention is used, the path of contact between the chemical liquid and the photoresist film on the upper surface of the wafer is greatly increased during the chemical treatment process in the chemical bath, thereby maximizing the removal efficiency of the photoresist film. It is effective.

또한, 건조되는 동안에 웨이퍼가 회전하므로 보다 빠른 시간 내에 웨이퍼를 건조시킬 수 있어 공정시간 단축의 효과가 있다.In addition, since the wafer rotates during drying, the wafer can be dried in a shorter time, thereby reducing the process time.

그리고, 웨이퍼를 1매씩 세정하므로 대구경화된 웨이퍼에 대해서도 습식 세정장치가 크기가 소형화되는 효과가 있다.Further, since the wafers are cleaned one by one, the size of the wet cleaning apparatus can be reduced in size even for a large diameter wafer.

Claims (2)

약액 배스(bath), 수세 배스 및 건조기를 포함하는 반도체 제조용 습식 세정장치에 있어서,In the wet cleaning apparatus for semiconductor manufacture containing a chemical bath, a rinse bath, and a dryer, 약액 배스, 수세 배스 및 건조기 내로 웨이퍼를 이동시키는 웨이퍼 로딩부가,A wafer loading section for moving the wafer into the chemical bath, the flush bath and the dryer, 웨이퍼의 후면을 잡는 척(chuck);A chuck holding the back side of the wafer; 상기 척의 상부에 설치된 회전봉;A rotating rod installed on an upper portion of the chuck; 상기 회전봉의 회전동력을 제공하는 모터A motor providing rotational power of the rotating rod 를 포함하여 이루어짐으로써, 약액 배스 및 수세 배스 내에서의 웨이퍼 처리공정 동안에 웨이퍼를 잡은 상태에서 회전시키는 것을 특징으로 하는 회전식 습식 세정장치.The rotational wet cleaning device comprising: rotating the wafer while holding the wafer during the wafer processing process in the chemical bath and the flush bath. 제 1 항에 있어서,The method of claim 1, 상기 건조기는,The dryer, 웨이퍼 건조과정 동안에 웨이퍼를 회전시키도록 내부의 웨이퍼 받침대의 하부에 설치된 회전봉과 상기 회전봉의 회전동력을 제공하는 모터를 포함하는 것을 특징으로 하는 회진식 습식 세정장치.And a motor providing a rotational force of the rotating rod and a rotating rod installed under the wafer pedestal so as to rotate the wafer during the wafer drying process.
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JPH08279482A (en) * 1995-04-05 1996-10-22 Nec Corp Method and system for cleaning semiconductor substrate
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