KR20020084376A - Organic-inorganic hybrid material for gate insulation film of tft-lcd, gate insulation film and its preparation comprising the same - Google Patents

Abstract

PURPOSE: An organic/inorganic complex material for the gate insulation layer of TFT-LCD, its preparation method, a gate insulation layer containing the material and an LCD containing the gate insulation layer are provided, to improve the coating property, the heat resistance, the hardness and the transmittance of the gate insulation layer. CONSTITUTION: The homopolymer for the organic/inorganic complex material is represented by the formula 1. Also the copolymer for the organic/inorganic complex material is a copolymer of the compound represented by the formula 1 and the compound represented by the formula 2 or 3. In the formula 1, R is an unsubstituted or substituted alkylene group of c1-C8; R1 is H or CH3; R2 is methyl, ethyl, propyl, butyl or methylene group; M is a metal selected from the group consisting of Si, Ti, Al, Zr and Ba; n is an integer of 100-1,000; and m is an integer of 5-10. In the formulas 2 and 3, R3 is H or CH3; R4 is benzyl group, an alkyl group of C1-C8, an aryl group having a substituent of C1-C6 or a benzyl group substituted with a halogen atom; and k is an integer of 100-1,000. The organic/inorganic complex material is comprises the polymer resin matrix comprising the homopolymer or the copolymer; and a metal compound selected from the group consisting of metal oxide, metal alkoxide sol, metal oxide and metal oxide sol.

Description

TF-LCD organic-inorganic composite material for gate insulating film, gate insulating film comprising same, and manufacturing method thereof TECHNICAL FIELD OF TECHNOLOGY TECHNICAL FIELD

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sol-gel composite material for a gate insulating film of a TFT-LCD, and a gate insulating film including the same, and a method for manufacturing the same. In particular, as a gate insulating film for a thin film transistor of an active matrix liquid crystal display device having excellent heat resistance and dielectric properties. It relates to a sol-gel composite material that can be used.

In general, a thin film transistor used as a switching element for driving a pixel electrode of a liquid crystal display device has a gate electrode and a source drain electrode formed between an active layer of an amorphous silicon or a polycrystalline silicon semiconductor layer, and the double gate electrode and the active layer are separated by a gate insulating film. In general, nitride films are used.

In the case of manufacturing a large-area, high-resolution thin film display device that has recently been in increasing demand, RC line delay occurs. In order to solve this problem, a method of reducing the resistance of the gate metal by increasing the thickness of the gate metal is used. However, when the thickness of the gate metal is increased and the nitride film is used as the gate insulating film, the planarization property is insufficient, and a short is easily generated between the gate electrode and the source drain electrode.

In this gate insulating film, U.S. Patent No. 4,839,402 and U.S. Patent No. 4,789,563 disclose sol-gel formation of silica, titania, and alumina and improvement of adhesion through the same, and U.S. Patent No. 6,100,954 discloses benzocyclo as a planarization material. A method of using an organic substance such as butene (BCB) is disclosed.

In addition, for the planarization of the gate insulating film, Je-Hsiung Lan and jerzy Kanicki use BCB (Benzocyclobutene) as the planarization film on the copper or chromium gate electrode, and the nitride film on the organic film. The structure of the double layer formed by the plasma enhanced chemical vapor deposition (PECVD) method was studied. In order to use the organic insulating film for such a purpose, it is necessary to satisfy various physical properties such as high dielectric constant, high heat resistance, excellent hardness, and transmittance, among other physical properties. However, BCB has a very low dielectric constant value (<3) compared to the dielectric constant required for the gate insulating film, and further improved heat resistance is required to satisfy various process characteristics.

Therefore, in order to improve the weakness of the conventional gate insulating film, the coating is easy to planarize, and among the various properties required for the insulating film material, development of a material having better heat resistance, higher permeability and hardness than the BCB and controlling the dielectric constant is possible. need.

SUMMARY OF THE INVENTION In view of the problems of the prior art, the present invention provides a novel polymer resin which can be used as a matrix resin of a gate insulating film for thin film transistors of a liquid crystal display device with excellent processability, heat resistance, and adhesion. The purpose.

Another object of the present invention is to provide an organic-inorganic composite material which is excellent in insulation, coating property, heat resistance, hardness, and permeability, and can easily be used as a gate insulating film for thin film transistors in liquid crystal display devices.

It is still another object of the present invention to provide a coating composition for a gate insulating film capable of spin coating capable of sufficiently flattening a thick gate metal with excellent heat resistance, permeability, adhesion, and insulation.

Another object of the present invention is to provide a method of manufacturing a gate insulating film for a thin film transistor of a liquid crystal display device corresponding to the dielectric properties of a conventional nitride film.

Figure 1 shows the hardness according to the curing time of the film made of a polymer resin matrix prepared by the present invention.

Figure 2 shows the hardness according to the curing time of the gate insulating film produced by the present invention.

The present invention provides a homopolymer represented by the following Chemical Formula 1 in order to achieve the above object:

[Formula 1]

In the formula of Formula 1,

R is a substituted or unsubstituted alkylene group having 1 to 8 carbon atoms,

R ₁ is hydrogen or a methyl group,

R ₂ is a methyl group, ethyl group, propyl group, butyl group or methylene group,

M is a metal selected from the group consisting of silicon, titanium, aluminum, zirconium, and barium,

n is an integer from 100 to 1000,

m is an integer of 5-10.

In addition, the present invention is a method for producing a homopolymer,

a) dissolving the monomer represented by Formula 1a in a solvent;

b) adding 0.1 to 10% by weight of the amount of the monomer to the solution of step a)

step; And

c) polymerization by heating the solution of step b)

It provides a manufacturing method comprising:

[Formula 1a]

In the formula of Formula 1a,

R is a substituted or unsubstituted alkylene group having 1 to 8 carbon atoms,

R ₁ is hydrogen or a methyl group,

R ₂ is a methyl group, ethyl group, propyl group, butyl group or methylene group,

M is a metal selected from the group consisting of silicon, titanium, aluminum, zirconium, and barium, m is an integer from 5 to 10.

In another aspect, the present invention provides a copolymer of the compound of Formula 1 and the compound represented by the following formula (2) or (3):

[Formula 2] [Formula 3]

In Formula 2 and Formula 3,

R ₃ is hydrogen or a methyl group,

R ₄ is benzene or an alkyl group having 1 to 8 carbon atoms, an aryl group having 1 to 6 carbon atoms, or an benzene substituted with halogen,

Each k is an integer from 100 to 1000.

In addition, the present invention provides a method for producing the copolymer,

a) iii) a monomer represented by Formula 1a; And

Ii) a monomer represented by the following formula (2a) or (3a)

Dissolving in a solvent;

b) adding an initiator to the solution of step a) in an amount of 0.01 to 10% by weight

step; And

c) polymerization by heating the solution of step b)

It provides a manufacturing method comprising:

[Formula 2a] [Formula 3a]

In the formula of Formula 2a and Formula 3a,

R ₃ is hydrogen or a methyl group,

R ₄ is benzene or an alkyl group having 1 to 8 carbon atoms, an aryl group having 1 to 6 carbon atoms, or an benzene substituted with halogen.

In addition, the present invention is an organic-inorganic composite material that is easy to adjust the dielectric constant,

a) iii) a homopolymer represented by Chemical Formula 1; or

Ii) represented by the compound of Formula 1 and Formula 2 or Formula 3

Copolymers of compounds

Polymer resin matrix comprising a; And

b) metal alkoxide and metal alkoxide dispersed in the polymer resin matrix

A metal selected from the group consisting of sol, metal oxide, and metal oxide sol

compound

It provides an organic-inorganic composite material comprising a.

In addition, the present invention is a gate insulating film coating composition for a thin film transistor of a liquid crystal display device,

a) iii) a homopolymer represented by Chemical Formula 1; or

Ii) represented by the compound of Formula 1 and Formula 2 or Formula 3

Copolymers of compounds

Polymer resin containing;

b) a metal alkoxide, a metal alkoxide sol, a metal oxide, and a metal oxide sol

Metal compounds selected from the group consisting of: And

c) solvent

It provides a gate insulating film coating composition comprising a.

In addition, the present invention is a method of manufacturing a gate insulating film for a thin film transistor of a liquid crystal display device

a) iii) a homopolymer represented by Formula 1, or

Represented by the compound of Formula 1 and Formula 2 or Formula 3

A polymer resin comprising a copolymer of a compound to be formed;

Ii) metal alkoxides, metal alkoxide sols, metal oxides, and metal oxide solos

A metal compound selected from the group consisting of; And

Iii) solvent

Blending and preparing a mixed coating solution;

b) coating the mixed coating solution on a substrate to form a coating film; And

c) heat-treating the coating film

It provides a method of manufacturing a gate insulating film comprising a.

Hereinafter, the present invention will be described in detail.

The present invention is a novel polymer resin having excellent processability, heat resistance, and adhesiveness, a homopolymer represented by Chemical Formula 1, a copolymer of a compound represented by Chemical Formula 1, Chemical Formula 2 or Chemical Formula 3, and a method of preparing the same. To provide. In particular, the compound of formula (1) gives excellent hardness and adhesion, and the compound represented by formula (2) or formula (3) gives excellent coating properties.

Such a polymer resin is suitable as a matrix resin in the gate insulating film for a thin film transistor of a liquid crystal display device.

To this end, the polymer resins can be easily prepared through radical polymerization, and each of the monomer components of Formula 1a, Formula 2a, or Formula 3a is added to a flask equipped with a stirrer and a nitrogen inlet in a predetermined molar ratio. It is prepared using an initiator and a solvent so as to have a solid content of 5 to 30% by weight, preferably 5 to 15% by weight. The initiator is preferably azobis (isobutyronitrile), and it is preferable to add 0.01 to 10% by weight based on the total amount of each monomer injected.

The solvent is methyl ethyl ketone, cyclohexanone, methyl isobutyl ketone, methyl cellosolve, ethyl cellosolve, tetrahydrofuran, dimethyl ether, prehylene glycol dimethyl ether, propylene glycol diethyl ether, propylene glycol ethyl methyl acetate And at least one member selected from the group consisting of chloroform, methyl ether acetate, ethyl-3-ethoxypropionate, ethyl cellosolve acetate, and butyl acetate.

In addition, the polymerization conditions are preferably carried out for 1 to 5 hours at a temperature of 70 to 120 ℃.

Each homopolymer and copolymer synthesized as described above preferably has a number average molecular weight of 1,000 to 100,000, more preferably 10,000 to 40,000, when used as a matrix of the gate insulating film.

The present invention provides an organic-inorganic composite material comprising a homopolymer represented by Chemical Formula 1 and a copolymer of a compound represented by Chemical Formula 1 and Chemical Formula 2 or Chemical Formula 3 as a matrix resin. The organic-inorganic composite material includes a metal alkoxide, a metal alkoxide sol, a metal oxide, or a metal oxide of a metal oxide sol in addition to the matrix resin, and the metal compounds are evenly dispersed in the matrix resin, and the metal compound is in the sol form. When mixed with the matrix resin, it forms a sol-gel composite. The organic-inorganic composite material can adjust the dielectric constant and dielectric breakdown voltage according to the content of the metal compound.

To this end, the mixing weight ratio of the polymer resin and the metal compound is preferably 5 to 95: 95 to 5. At this time, when the mixing weight ratio is less than the above range, there is a problem that the hardness is lowered, and when the mixing weight ratio exceeds the above range, there is a problem that the film is easily cracked.

In addition, the metal alkoxide is preferably selected from the group consisting of silicon alkoxide, titanium alkoxide, zirconium alkoxide, barium alkoxide, and aluminum alkoxide, and the metal oxide particles are preferably selected from the group consisting of silica, titania, zirconia and alumina. .

In addition, the sol compound prepared from the metal alkoxide or the metal oxide particles is prepared through hydrolysis and condensation reaction by adding tertiary distilled water to each metal alkoxide or metal oxide, and adding the ratio or equivalent ratio of each metal alkoxide or metal oxide. And, the metal alkoxide and the metal oxide content is preferably 20 to 80% by weight. At this time, the acid catalyst to the reaction further comprises 0.01 to 0.5% by weight based on the third distilled water. The acid catalyst is preferably selected from the group consisting of itaconic acid, hydrochloric acid, nitric acid and acetic acid. In addition, 5 to 15% by weight of ethanol, or 0.5 to 1.5 equivalents of acetyl acetonate, may be added to the water added for controlling the reactivity.

Therefore, such an organic-inorganic composite material is preferred as a gate insulating film for thin film transistors of the liquid crystal display device because of excellent insulation, coating properties, heat resistance, hardness, and transmittance, and easy to control the dielectric constant.

In addition, the present invention provides a coating composition for a gate insulating film capable of spin coating capable of sufficiently flattening a thick gate metal with excellent heat resistance, permeability, adhesion, and insulation. In other words, the polymer resin and the metal alkoxide, metal oxide particles or sol compounds thereof are provided through the sol-gel reaction or mixed to provide a coating composition for the gate insulating film of the thin film transistor. This method can be used in the production of large-scale advanced TFT-LCDs by manufacturing a gate insulating film of a thin film transistor having excellent coating property, adhesion, heat resistance, and chemical resistance.

To this end, the polymer composition and the metal compound are dispersed and dissolved in a solvent to prepare a coating composition which is easy for preparing an insulating film.

The solvent dissolves the polymer resin component and facilitates dispersion of the sol-gel solution. Here, the mixing weight ratio of the polymer resin: metal compound: solvent is preferably 20:80 to 30:70. At this time, when the mixing weight ratio is less than the above range, there is a problem that the hardness is weak, and when it exceeds the above range, there is a problem that the film is easily cracked.

The solvent may be used as it is a solvent used in the preparation of the polymer resin, methyl ethyl ketone, cyclohexanone, methyl isobutyl ketone, methyl cellosolve, ethyl cellosolve, tetrahydrofuran, dimethyl ether, pre- propylene glycol At least one selected from the group consisting of dimethyl ether, propylene glycol diethyl ether, propylene glycol ethyl methyl acetate, chloroform, methyl ether acetate, ethyl-3-ethoxypropionate, ethyl cellosolve acetate, and butyl acetate desirable.

Such a gate insulating film coating composition may be prepared by the following two methods.

One of the various metal alkoxides or metal oxide particles as it is in the polymer resin matrix, which is a copolymer of the polymer represented by Formula 1 or the polymer represented by Formula 1 and the compound represented by Formula 2 or the compound represented by Formula 3 A hybrid method may be used in which the mixture is mixed with a solvent.

The other is to form a sol from a metal alkoxide or metal oxide particles, to obtain a reaction product, and then mixed with a solvent and uniformly dispersed in the polymer resin matrix, it is formed of a sol-gel composite material.

The coating composition thus prepared exhibits high hardness of at least 8H, high transmittance of more than 99% (400 nm, 1 micron thick), and high heat resistance to satisfy the process conditions required as the gate insulating material, and according to the composition of each alkoxide, Insulation characteristics can be adjusted.

In addition to the basic components, the coating composition may be used by adding a small amount of a defoaming agent, a surfactant, and the like in order to improve the film forming performance as necessary.

The present invention provides a method of manufacturing a gate insulating film for a thin film transistor of a liquid crystal display device corresponding to the dielectric properties of a conventional nitride film. That is, a gate insulating film is manufactured using the coating composition.

First, the polymer resin, the metal compound and the solvent component are uniformly dispersed and mixed. In this case, the mixing weight ratio of the polymer resin: metal compound: solvent is as described above.

Next, the coating liquid obtained above is performed on a substrate (substrate). That is, the finally obtained sol-gel composition solution is obtained transparently, and filtered using a membrane filter of 0.1 to 5 탆 adjusted to a solid content of 5 to 15% by weight. This filtered resin composition is formed into a film at 1000 rpm for 15 to 30 second using well-known methods, such as a spin coating method, a roll coating method, and a spray coating method. A glass plate or a silicon wafer can be used as a film forming substrate. At this time, the thickness of the film surface is determined by the film forming conditions such as the viscosity of the composition, the concentration of the solid content, the film forming speed and the like, preferably a thin film of 0.1 to 3.0 ㎛ thickness can be obtained.

Next, the step of heat-treating the thin film under a constant condition to produce a gate insulating film. The present invention is pre-treated while maintaining the obtained thin film for 100 seconds to 500 seconds using a heating plate or an oven at a temperature of 50 to 150 ℃, and then subjected to a post-heat treatment at a temperature of 250 to 300 ℃ to obtain a gate insulating film having excellent physical properties You can get it.

The present invention can manufacture a large sized advanced TFT-LCD by a conventional method including the gate insulating film.

Thus, according to the present invention, there is provided a polymer resin containing a metal alkoxide having excellent physical properties such as heat resistance and adhesion, and further comprising a metal alkoxide, metal oxide particles, or a sol compound thereof as a sol material having excellent insulation properties. By using a hybrid or sol-gel reaction uniformly mixed to improve the physical properties such as coating properties, adhesion and heat resistance can provide a composite material excellent in transparency, insulating properties and the like. Accordingly, the present invention can provide a gate insulating film having excellent physical properties using the composite material and a TFT-LCD including the same.

Hereinafter, the present invention will be described in detail based on the following examples, but the present invention is not limited thereto.

[Comparative Examples 1 to 5]

(Manufacture of gate insulating film)

The coating composition having the composition as shown in Table 1 was spin coated on a glass substrate, a substrate on which metal was sputtered, and a substrate on which color filters were spin coated at a rotation speed of 800 rpm for 10 seconds, and then at 100 ° C. for 5 minutes at 150 ° C. Each gate insulating film was formed by heat treatment for 30 minutes and at 250 ° C. for 1 hour, and then a film forming and gelling characteristic experiment was performed on each substrate of the sol and the polymer hybrid solution, and the results are shown in Table 1 below.

Classification (% by weight) Comparative example One 2 3 4 5 menstruum 72 72 72 72 72 Sol 22.4 19.6 8.4 5.6 2.8 Polymer resin 5.6 8.4 19.6 22.4 25.2 Filmmaking Characteristics on Glass Substrates Great Great Great Great Great Film forming characteristics on metal substrate Peeling phenomenon Peeling phenomenon Hardness defect (<4H) Hardness defect (<4H) Hardness defect (<4H) Filmmaking Characteristics on Acrylic Substrate Peeling phenomenon Peeling phenomenon Hardness defect (<4H) Hardness defect (<4H) Hardness defect (<4H)

Example 1

(Production of Polymer Resin Matrix)

30 g of gamma-methacryloxy propyl trimethoxy silane was mixed with 50 g of methyl ethyl ketone as a solvent in a 500 ml reactor under a nitrogen atmosphere, and the temperature of the flask was gradually raised to 70 ° C. and azobis (isobutyronitrile) as an initiator was added. Was dissolved in a solvent and then injected at 0.5% by weight relative to gamma-methacryloxy propyl trimethoxy silane. Then, the reaction temperature was maintained at 70 ° C over 3 hours to prepare a polymer having a number average molecular weight of 30,000 and a polydispersity of 2.5.

The solid content of the solution was 9% by weight to obtain a solution having a viscosity of 3 cp, spin-coated at 1000 rpm for 30 seconds, and then heat-treated at 100 ° C. for 5 minutes and at 300 ° C. for 5 hours to obtain a 0.36 μm thick film. Could. Thus obtained film was excellent in adhesion on the glass surface, the pencil hardness according to the curing time shown in Figure 1 showed a pencil hardness of 5H after 5 hours.

Example 2

(Production of Polymer Resin Matrix)

A polymer resin was prepared in the same manner as in Example 1, using gamma-methacryloxy propyl triethoxy silane as a monomer. When the thin film was formed using the polymer resin thus obtained, hardness of 5H or more and transmittance of 99% or more were obtained.

Example 3

(Production of Polymer Resin Matrix)

In a 500 ml reactor under nitrogen atmosphere, 30 g of gamma-methacryloxy propyl trimethoxy silane and 35 g of allyl triethoxy silane as a monomer were mixed with 70 g of methyl ethyl ketone as a solvent, and the temperature of the flask was gradually raised to 70 ° C. Azobis (isobutyronitrile), an initiator, was sufficiently dissolved in a solvent and then injected at 0.5% by weight based on the monomer. Thereafter, the reaction temperature was maintained at 70 ° C. over 3 hours to prepare a polymer having a number average molecular weight of 28,000 and a polydispersity of 2.8.

The solid content of the solution was 9% by weight to obtain a solution having a viscosity of 3 cp, spin-coated at 1000 rpm for 30 seconds, and then heat-treated at 100 ° C. for 5 minutes and at 300 ° C. for 5 hours to obtain a 0.36 μm thick film. Could. Thus obtained film was excellent in adhesion on the glass surface, the pencil hardness according to the curing time shown in Figure 1 showed a pencil hardness of 5H after 5 hours.

Example 4

(Production of Polymer Resin Matrix)

A polymer resin was prepared in the same manner as in Example 3, except that allyl triethoxy silane was used instead of gamma-methacryloxypropyl trimethoxy silane as the monomer. When the thin film was formed using the polymer resin thus obtained, hardness of 5H or more and transmittance of 99% or more were obtained.

Example 5

(Production of Polymer Resin Matrix)

A polymer resin was prepared in the same manner as in Example 3, except that allyl trimethoxy silane was used instead of gamma-methacryloxy propyl trimethoxy silane as a monomer. When the thin film was formed using the polymer resin thus obtained, hardness of 5H or more and transmittance of 99% or more were obtained.

Example 6

(Production of Metal Oxide Sol)

30 g of triethoxy silane and 10 g of tertiary distilled water were mixed, and 0.01 g of 0.1 wt% of distilled water was added thereto as an acid catalyst. Then, the sol reaction was performed for 3 hours to confirm that the solution became clear, and then diluted with a solvent to prepare a sol.

Example 7

(Production of Metal Oxide Sol)

30 g of titanium tetraisopropoxide and 10 g of tertiary distilled water were mixed, and 15 g of acetyl acetone for reactivity control and 0.01 g of hydrochloric acid (0.1 wt%) of distilled water were added as an acid catalyst. Then, the sol reaction was performed for 3 hours to confirm that the solution became clear, and then diluted with a solvent to prepare a sol.

Example 8

(Manufacture of organic-inorganic composite materials)

The polymer resin prepared in Example 1 and the sol prepared in Example 6 were mixed at a weight ratio of 5:95.

When the composite material thus formed was formed at 1000 rpm, a thickness of 0.1 to 0.3 micron was obtained, and when it was maintained at 100 ° C. for 5 minutes and at 300 ° C. for 1 hour, a high hardness of 8H or higher (FIG. 2) and 99% were obtained. The high transmittance (400 nm, 1 micron thickness) and high heat resistance were shown.

Example 9

(Preparation of Gate Insulating Coating Composition)

The coating composition was prepared by mixing 4.5% by weight of the polymer resin prepared in Example 1, 18.75% by weight of the sol prepared in Example 6 and 76.75% by weight of methyl ethyl ketone so that the weight ratio of the polymer resin and the sol was 5:95. Prepared. The coating composition thus prepared showed a viscosity of 3 cp, and when forming a film at 1000 rpm, a thickness of 0.1 to 0.3 microns was obtained. After that, when it was maintained at 100 ° C. for 5 minutes and at 300 ° C. for 1 hour, the coating composition had a viscosity of 3 cp. It showed high hardness (Figure 2), high transmittance of more than 99% (400 nm, 1 micron thickness) and high heat resistance.

Example 10

(Preparation of gate insulating film coating composition)

4.5 wt% of the polymer resin prepared in Example 3, 18.75 wt% of the sol prepared in Example 7 and 76.75 wt% of methyl ethyl ketone were mixed so that the weight ratio of the polymer resin and the sol was 5:95. Was prepared. The coating composition thus prepared showed a viscosity of 3 cp, and when the film was formed at 1000 rpm, a thickness of 0.1 to 0.3 microns was obtained, and then, when maintained at 100 ° C. for 5 minutes and at 300 ° C. for 1 hour, 8H or more. It has high hardness, high transmittance of over 99% (400 nm, 1 micron thick) and high heat resistance.

[Examples 11 to 13]

(Manufacture of gate insulating film)

Using the polymer resin prepared in Example 4 as a matrix, using the sol prepared in Preparation Example 7 was prepared in the coating composition with the composition shown in Table 1 below.

Each sample was spin-coated on a glass substrate, a substrate on which metal was sputtered, and a substrate on which color filters were spin coated at a rotational speed of 800 rpm for 10 seconds, followed by 5 minutes at 100 ° C, 30 minutes at 150 ° C, and 250 ° C. Each gate insulating film was formed by heat treatment for 1 hour at, and then a film forming and gelling characteristic experiment was performed on each substrate of the sol and the polymer hybrid solution, and the results are shown in Table 2 below.

Classification (% by weight) Example One 2 3 menstruum 72 72 72 Sol 16.8 14 11.2 Polymer resin 11.2 14 16.8 Filmmaking Characteristics on Glass Substrates Great Great Great Film forming characteristics on metal substrate Great Great Great Filmmaking Characteristics on Acrylic Substrate Great Great Great

Example 14

(Manufacture of gate insulating film)

A polymer-titania composite material was prepared in the same manner as in Example 11, but using a sol-gel reaction using titanium tetraisopropoxide as a metal alkoxide. In this case, a sol using 15 g of acetyl acetonate and 30 g of ethyl alcohol was used for the reactivity control.

Example 15

(Manufacture of gate insulating film)

A thin film for a gate insulating film was prepared in the same manner as in Example 11, using zirconium butoxide as the metal alkoxide.

Example 16

(Manufacture of gate insulating film)

A thin film for a gate insulating film was prepared in the same manner as in Example 11 except that aluminum butoxide was used as the metal alkoxide.

Example 17

The same method as in Example 11, except that silica was used as the sol-gel metal oxide particles. The thin film thus prepared had a transmittance of 99% or more at 400 nm and a surface hardness of> 8H.

Example 18

(Manufacture of gate insulating film)

In the same manner as in Example 11, zirconia was used as metal oxide particles for sol-gel. The thin film thus prepared had a transmittance of 99% or more at 400 nm and a surface hardness of> 8H.

Example 19

The same method as in Example 11, except that titania was used as the sol-gel metal oxide particle. The thin film thus prepared had a transmittance of 99% or more at 400 nm and a surface hardness of> 8H.

According to the present invention, a polymer matrix having excellent processability, heat resistance, and adhesion is provided, and further, the metal alkoxide, metal oxide particles, or sol compound thereof exhibits excellent physical properties in coating property, heat resistance, hardness, and permeability. By providing a gate insulating film of an amorphous thin film transistor to solve the planarization problem of the gate nitride film generated in a large thin film transistor using a thick gate electrode and a short problem with the active layer generated from it can be usefully used in the production of large TFT-LCD .

Claims (19)

Homopolymer represented by the following formula (1): [Formula 1] In the formula of Formula 1, R is a substituted or unsubstituted alkylene group having 1 to 8 carbon atoms, R ₁ is hydrogen or a methyl group, R ₂ is a methyl group, ethyl group, propyl group, butyl group or methylene group, M is a metal selected from the group consisting of silicon, titanium, aluminum, zirconium, and barium, n is an integer from 100 to 1000, m is an integer of 5-10. In the method for producing a homopolymer according to claim 1, a) dissolving the monomer represented by Formula 1a in a solvent; b) adding an initiator to the solution of step a) in an amount of 0.01 to 10% by weight step; And c) polymerization by heating the solution of step b) Manufacturing method comprising: [Formula 1a] In the formula of Formula 1a, R is a substituted or unsubstituted alkylene group having 1 to 8 carbon atoms, R ₁ is hydrogen or a methyl group, R ₂ is a methyl group, ethyl group, propyl group, butyl group or methylene group, M is a metal selected from the group consisting of silicon, titanium, aluminum, zirconium, and barium, m is an integer of 5-10. The method of claim 2, The solvent of step a) is methyl ethyl ketone, cyclohexanone, methyl isobutyl ketone, methyl cellosolve, ethyl cellosolve, tetrahydrofuran, dimethyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, propylene glycol At least one selected from the group consisting of ethyl methyl acetate, chloroform, methyl ether acetate, ethyl-3-ethoxypropionate, ethyl cellosolve acetate, and butyl acetate. The method of claim 2, The initiator of step b) is azobis (isobutyronitrile). The method of claim 2, The polymerization of step c) is carried out for 1 to 5 hours at a temperature of 70 to 120 ℃. A copolymer of a compound represented by the following Chemical Formula 1 and a compound represented by the following Chemical Formula 2 or [Formula 1] In the formula of Formula 1, R is a substituted or unsubstituted alkylene group having 1 to 8 carbon atoms, R ₁ is hydrogen or a methyl group, R ₂ is a methyl group, ethyl group, propyl group, butyl group or methylene group, M is a metal selected from the group consisting of silicon, titanium, aluminum, zirconium, and barium, n is an integer from 100 to 1000, m is an integer from 5 to 10; [Formula 2] [Formula 3] In Formula 2 and Formula 3, R ₃ is hydrogen or a methyl group, R ₄ is benzene or an alkyl group having 1 to 8 carbon atoms, an aryl group having 1 to 6 carbon atoms, or an benzene substituted with halogen, Each k is an integer from 100 to 1000. In the manufacturing method of the copolymer of Claim 6, a) iii) a monomer represented by the following general formula (1a); And Ii) a monomer represented by formula (2a) or (3a) Dissolving in a solvent; b) adding an initiator to the solution of step a) in an amount of 0.01 to 10% by weight step; And c) polymerization by heating the solution of step b) Manufacturing method comprising: [Formula 1a] In the formula of Formula 1a, R is a substituted or unsubstituted alkylene group having 1 to 8 carbon atoms, R ₁ is hydrogen or a methyl group, R ₂ is a methyl group, ethyl group, propyl group, butyl group or methylene group, M is a metal selected from the group consisting of silicon, titanium, aluminum, zirconium, and barium, m is an integer from 5 to 10; [Formula 2a] [Formula 3a] In the formula of Formula 2a and Formula 3a, R ₃ is hydrogen or a methyl group, R ₄ is benzene or an aryl having an alkyl group having 1 to 8 carbon atoms, an aryl group having 1 to 6 carbon atoms, or a benzene substituted with halogen. The method of claim 7, wherein The solvent of step a) is methyl ethyl ketone, cyclohexanone, methyl isobutyl ketone, methyl cellosolve, ethyl cellosolve, tetrahydrofuran, dimethyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, propylene glycol At least one selected from the group consisting of ethyl methyl acetate, chloroform, methyl ether acetate, ethyl-3-ethoxypropionate, ethyl cellosolve acetate, and butyl acetate. The method of claim 7, wherein The initiator of step b) is azobis (isobutyronitrile). The method of claim 7, wherein The polymerization of step c) is carried out for 1 to 5 hours at a temperature of 70 to 120 ℃. In organic-inorganic composite material that can easily adjust the dielectric constant, a) iii) a homopolymer represented by the following formula (1); or Ii) a compound represented by the following formula (1) and a formula (2) or Copolymers of compounds represented by formula (3) Polymer resin matrix comprising a; And b) metal alkoxide and metal alkoxide dispersed in the polymer resin matrix A metal selected from the group consisting of sol, metal oxide, and metal oxide sol compound Organic-Inorganic Composites Containing: [Formula 1] In the formula of Formula 1, R is a substituted or unsubstituted alkylene group having 1 to 8 carbon atoms, R ₁ is hydrogen or a methyl group, R ₂ is a methyl group, ethyl group, propyl group, butyl group or methylene group, M is a metal selected from the group consisting of silicon, titanium, aluminum, zirconium, and barium; n is an integer from 100 to 1000, m is an integer from 5 to 10, [Formula 2] [Formula 3] In Formula 2 and Formula 3, R ₃ is hydrogen or a methyl group, R ₄ is benzene or an alkyl group having 1 to 8 carbon atoms, an aryl group having 1 to 6 carbon atoms, or an benzene substituted with halogen, Each k is an integer from 100 to 1000. The method of claim 11, The polymer resin matrix of a) is an organic-inorganic composite material having a number average molecular weight of 1,000 to 100,000. The method of claim 11, An organic-inorganic composite material having a mixed weight ratio of the polymer resin matrix of a) and the metal compound of b) of 20:80 to 30:70. The method of claim 11, The metal alkoxide of b) is selected from the group consisting of silicon alkoxide, titanium alkoxide, zirconium alkoxide, barium alkoxide, and aluminum alkoxide, and the metal oxide is selected from the group consisting of silica, titania, zirconia, barium oxide, and alumina. Composite materials. The method of claim 11, The metal alkoxide sol and the metal oxide sol of b) are added to each metal alkoxide or metal oxide so that the concentration of the metal alkoxide or metal oxide is 20 to 80% by weight, and 0.01 to 0.5% by weight based on the added water. An organic-inorganic composite material prepared by the method comprising the step of adding an acid catalyst of hydrolysis and condensation reaction. The method of claim 15, The organic-inorganic composite material wherein the acid catalyst is selected from the group consisting of itaconic acid, acetic acid, nitric acid, and hydrochloric acid. The method of claim 15, The hydrolysis and condensation reaction is an organic-inorganic composite material is carried out by further adding 5 to 15% by weight of ethanol to the added water. The method according to claim 15 or 17, The hydrolysis and condensation reaction is carried out by further adding 0.5 to 1.5 equivalents of acetyl acetonate to the metal alkoxide. A liquid crystal display device comprising the composite material according to claim 11 as a gate insulating film.