KR20020083760A - Thin film optical disc - Google Patents

Thin film optical disc Download PDF

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KR20020083760A
KR20020083760A KR1020010023387A KR20010023387A KR20020083760A KR 20020083760 A KR20020083760 A KR 20020083760A KR 1020010023387 A KR1020010023387 A KR 1020010023387A KR 20010023387 A KR20010023387 A KR 20010023387A KR 20020083760 A KR20020083760 A KR 20020083760A
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layer
thin film
optical disc
film optical
alloy
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KR1020010023387A
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Korean (ko)
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KR100421862B1 (en
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정태희
서훈
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엘지전자 주식회사
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Priority to KR10-2001-0023387A priority Critical patent/KR100421862B1/en
Priority to JP2002126341A priority patent/JP3639264B2/en
Priority to US10/133,959 priority patent/US6899993B2/en
Publication of KR20020083760A publication Critical patent/KR20020083760A/en
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    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/24018Laminated discs
    • G11B7/24027Layers; Shape, structure or physical properties thereof
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B20/00Signal processing not specific to the method of recording or reproducing; Circuits therefor
    • G11B20/10Digital recording or reproducing
    • G11B20/10009Improvement or modification of read or write signals
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B20/00Signal processing not specific to the method of recording or reproducing; Circuits therefor
    • G11B20/24Signal processing not specific to the method of recording or reproducing; Circuits therefor for reducing noise
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/258Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
    • G11B7/2585Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on aluminium
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/258Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
    • G11B7/259Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on silver
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/258Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
    • G11B2007/2581Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on aluminium
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/258Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
    • G11B2007/2582Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on silver
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B2220/00Record carriers by type
    • G11B2220/20Disc-shaped record carriers
    • G11B2220/23Disc-shaped record carriers characterised in that the disc has a specific layer structure
    • G11B2220/235Multilayer discs, i.e. multiple recording layers accessed from the same side
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B2220/00Record carriers by type
    • G11B2220/20Disc-shaped record carriers
    • G11B2220/25Disc-shaped record carriers characterised in that the disc is based on a specific recording technology
    • G11B2220/2537Optical discs

Abstract

PURPOSE: A thin film optical disc is provided to reduce the surface roughness and the signal noise by using a mixture film of Al and SiO2 as a reflecting layer in a thin film optical disc of a reversed stacking structure. CONSTITUTION: A thin film optical disc includes a reflecting layer(20), an upper dielectric protecting layer(30), a recording layer(40), and a lower dielectric protecting layer(50) stacked on a poly carbonate substrate(10) in sequence, wherein the reflecting layer is formed of one of Al, Al alloy, Ag or Ag alloy added with a predetermined amount of oxide or nitride, and the amount of the oxide or nitride is 0.1-10mole%.

Description

박막 광디스크{thin film optical disc}Thin film optical disc

본 발명은 박막 광디스크에 관한 것으로, 특히 얇은 커버막에 사용되는 역적층구조에서 반사층의 표면 거칠기를 감소시켜 신호 노이즈를 감소시키기 위한 박막 광디스크에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to thin film optical discs, and more particularly to thin film optical discs for reducing signal noise by reducing the surface roughness of the reflective layer in a reverse stacked structure used for thin cover films.

최근 DVD(Digital Versatile Disc) 규격이 제안, 표준화되면서 DVD-ROM, DVD-RAM, DVD-R, DVD-RW, DVD+RW 등 다양한 제품이 출시되고 있다.Recently, as the DVD (Digital Versatile Disc) standard is proposed and standardized, various products such as DVD-ROM, DVD-RAM, DVD-R, DVD-RW, and DVD + RW have been released.

이들 DVD 제품들은 단면 단층막(single-sided single layer) 기준으로, 그 용량이 약 4.7 기가 바이트(Giga Byte : GB)이다. 이는 VHS급 화질로 약 두 시간 분량의 영화를 저장할 수 있는 용량으로, 점차 보급이 확대될 전망이다.These DVD products are based on a single-sided single layer and have a capacity of about 4.7 gigabytes (GB). This is the capacity to store about two hours of movies in VHS quality, and is expected to expand gradually.

이들 광 저장매체는 정보를 담고있는 두께가 0.6mm인 두 장의 투명한 고분자 기판을 서로 맞붙여 전체 두께가 1.2mm이고, 그 지름이 12cm 인 디스크 형상이며, 정보를 담고있는(즉, 반사층 혹은 다층박막을 포함) 0.6mm의 적층 기판과 이들 두 기판을 서로 접착시키기 위한 접착제(adhesive)층으로 구성된다.These optical storage media are two disks each having a thickness of 0.6 mm, which is 1.2 mm in diameter, 12 cm in diameter, and contains information (i.e., a reflective layer or a multilayer thin film). It is composed of a laminated substrate of 0.6mm and an adhesive (adhesive) layer for bonding the two substrates to each other.

상기한 광 정보저장 매체에서, 정보를 기록하거나 매체상의 정보를 읽어내기 위해서는 원리적으로 광픽업(optical pick-up)의 대물렌즈를 떠난 레이저빔이 일정두께(예, 4.7GB의 DVD 경우, 0.6mm)의 투명한 기판을 지나, 정보 기록층(혹은 정보 저장층)에 입사된다.In the above optical information storage medium, in order to record information or to read information on the medium, in principle, the laser beam leaving the optical pick-up objective lens has a constant thickness (for example, 0.6 in 4.7 GB DVD). passing through the transparent substrate of mm) and incident on the information recording layer (or information storage layer).

이때, 기록매체의 기록밀도를 결정하는 정보 저장층에서 스팟(spot)의 크기는 사용 광원의 파장에 비례하고, 대물렌즈의 개구수에 반비례한다.In this case, the size of the spot in the information storage layer determining the recording density of the recording medium is proportional to the wavelength of the light source used and inversely proportional to the numerical aperture of the objective lens.

따라서 정보 기록밀도를 올리기 위해서는 주어진 기판 두께에 대하여 단파장 광원과 개구수가 큰 렌즈의 사용이 필수적이다.Therefore, in order to increase the information recording density, it is necessary to use a short wavelength light source and a lens having a large numerical aperture for a given substrate thickness.

그러나 렌즈의 개구수를 증가시킬 경우, 디스크의 기울기(tilt)에 의한 코마수차(comma adderation)가 개구수의 3승에 비례()하여 현저히 커지는 문제점이 있다.However, when increasing the numerical aperture of the lens, the comma aberration due to the tilt of the disk is proportional to the third power of the numerical aperture. There is a problem that is significantly larger.

특히, 이러한 코마 수차의 발생정도는 입사광 방향에 위치한 기판의 두께가 두꺼울수록 현저하다.In particular, the degree of occurrence of coma aberration is remarkable as the thickness of the substrate positioned in the incident light direction becomes thicker.

또한 두께가 두꺼운 기판을 사용할 경우, 기판 표면에 묻은 먼지 등에 의한 신호 열화의 지속시간이 길어져 초점(focus) 제어나 트래킹(tracking) 제어에 매우 악영향을 초래한다.In addition, when a thick substrate is used, the duration of signal degradation caused by dust or the like on the surface of the substrate is extended, which greatly affects the focus control or tracking control.

그 결과, 디스크 한 장에 약 20GB 이상의 높은 기록용량을 갖는 저장매체에서는 단파장의 LD(Laser Diode), 높은 개구수(Numerical aperture : NA)의 대물렌즈와 얇은 커버층의 도입이 제안되었다.As a result, the introduction of a short wavelength LD (Laser Diode), a high numerical aperture (NA) objective lens and a thin cover layer has been proposed in a storage medium having a high recording capacity of about 20GB or more per disc.

그러나 박막을 사용하는 이 기술은 고밀도와 전송속도, 코마 수차의 발생정도를 최소화 할 수 있음에도 불구하고, 실용화를 막고 있는 큰 걸림돌 중의 하나가역 적층(reversed stacking) 박막 구조로 인한 신호의 노이즈 증가이다.However, despite the fact that the thin film technology can minimize the occurrence of high density, transmission speed, and coma aberration, one of the major obstacles to practical use is the increase in signal noise due to the reversed stacking thin film structure.

광디스크를 구성하는 박막 중에서 알루미늄(Al) 막은 결정 상태로 도포되는데, 헤테로제이니어스(heterogeneous) 누큘리에이션(nucleation) 및 그래인(grain) 그로스(growth) 특성으로 인해 비정질상태로 도포되는 경우에 비해 표면 거칠기가 크다. 통상, Al 박막은 막두께 100nm에서 20~30A 의 RMS 거칠기를 갖는다.Among the thin films constituting the optical disk, an aluminum (Al) film is applied in a crystalline state, compared with an amorphous state due to heterogeneous nucleation and grain growth characteristics. The surface roughness is large. Usually, the Al thin film has an RMS roughness of 20 to 30 A at a film thickness of 100 nm.

따라서 알루미늄(Al) 막은 많은 그레인(grain)과 그레인 한계(grain boundary)들로 구성되어 있고, 이로 인해서 비정질 상태로 도포되는 다른 박막에 비해서 표면의 거칠기(surface roughness)가 크다.Therefore, the aluminum (Al) film is composed of many grains and grain boundaries, and thus has a large surface roughness compared to other thin films applied in an amorphous state.

즉, 박막의 두께에 따라서 차이가 있지만, 대략적으로 알루미늄(Al) 박막은 20~30A의 RMS(Root Mean Square) 거칠기(roughness)를 갖는다.That is, although there is a difference depending on the thickness of the thin film, the aluminum (Al) thin film has a root mean square (RMS) roughness of about 20 to 30A.

반면 유전체층인 ZnS-SiO2나 GeSbTe은 비정질 상태로 도포되며, 또한 그레인이 없으므로 표면 거칠기가 2~10A으로 매우 작다.On the other hand, the dielectric layers ZnS-SiO 2 or GeSbTe are applied in an amorphous state, and because there is no grain, the surface roughness is very small as 2 ~ 10A.

일반적인 광디스크에서는 기판 위에 유전체층/기록막층/유전체층/반사층의 순서로 막을 적층하고, 신호는 기록막층에서 반사되는 것을 검출(detect)하므로, 반사층의 표면 거칠기가 큰 것은 검출된 신호에는 영향을 주지 않는다.In general optical discs, films are stacked on the substrate in the order of dielectric layer / recording layer / dielectric layer / reflective layer, and the signal is detected to be reflected from the recording layer. Therefore, the large surface roughness of the reflective layer does not affect the detected signal.

그러나 기록매체의 기록밀도를 높이기 위해 얇은 커버(cover) 막을 형성하기 위해서는 역 적층(reversed stacking)을 하여야 한다. 즉, 기판 위에 반사층/유전체층/기록막층/유전체층의 순서로 막이 적층되어야 한다.However, in order to form a thin cover film to increase the recording density of the recording medium, reversed stacking must be performed. That is, a film should be laminated on the substrate in the order of a reflective layer, a dielectric layer, a recording film layer, and a dielectric layer.

이때 반사층인 알루미늄층이 제일 먼저 도포되므로, 그 위에 도포되는 유전체 층과 기록막 층은 알루미늄의 큰 표면 거칠기의 영향을 받는다.At this time, since the aluminum layer, which is a reflective layer, is applied first, the dielectric layer and the recording film layer applied thereon are affected by the large surface roughness of aluminum.

즉, 도 1 과 같이 기판 위에 유전체층/기록막층/유전체층/반사층의 순서로 막이 적층되는 일반적인 광디스크에서는 반사층의 표면 거칠기가 25A정도로 매우 큰 반면에 기록막층의 표면 거칠기는 2A 이하로 매우 작게 나타난다.That is, the surface roughness of the reflective layer is very large (about 25 A) while the surface roughness of the recording layer is very small (2 A or less) in a general optical disc in which films are laminated in the order of dielectric layer / recording film layer / dielectric layer / reflective layer on a substrate as shown in FIG.

그러나 도 2 와 같이 기판 위에 반사층/유전체층/기록막층/유전체층의 순서로 막이 적층되는 역 적층 광디스크에서는 반사층의 표면 거칠기가 도 1과 동일한 25A정도에서 기록막층의 표면 거칠기가 15A 정도로 매우 크게 나타남을 알 수 있다.However, in the reverse stacked optical disc in which films are stacked in the order of the reflective layer / dielectric layer / recording film layer / dielectric layer on the substrate as shown in FIG. 2, it is understood that the surface roughness of the recording layer is very large at about 15A at about 25A as in FIG. Can be.

따라서 기록막층의 큰 표면 거칠기로 인해서 검출된 신호에서 잔류 노이즈(residual noise)가 생기게 되고 지터값을 나쁘게 함으로써, 기록특성을 나쁘게 한다.Therefore, residual noise is generated in the detected signal due to the large surface roughness of the recording film layer, and the jitter value is worsened, resulting in poor recording characteristics.

이런 노이즈를 줄이기 위해서는 반사층으로 사용되는 알루미늄(Al), 알루미늄 합금, 은(Ag), 은 합금 층의 표면 거칠기를 낮추어야만 한다.To reduce this noise, the surface roughness of the aluminum (Al), aluminum alloy, silver (Ag), and silver alloy layer used as the reflective layer must be lowered.

그 방법으로 상기 반사층에 티타늄(Ti), 크롬(Cr) 등을 소량 첨가하는 방법이나, 알루미늄 스퍼터링(sputtering) 후에 에칭하는 방법, 또는 DC 스퍼터링이 아닌 이온 빔 스퍼터링을 사용하는 방법 등이 사용되고 있다.As a method, a small amount of titanium (Ti), chromium (Cr), or the like is added to the reflective layer, an etching method after aluminum sputtering, or a method using ion beam sputtering rather than DC sputtering is used.

그러나 이상에서 설명한 종래 기술에 따른 박막 광디스크의 반사층 형성 방법은 다음과 같은 문제점이 있다.However, the method of forming the reflective layer of the thin film optical disc according to the related art described above has the following problems.

첫째, 티타늄(Ti), 크롬(Cr) 등을 소량 첨가하는 방법은 그 효과가 매우 작다.First, the method of adding a small amount of titanium (Ti), chromium (Cr) and the like is very small.

둘째, 알루미늄 스퍼터링(sputtering) 후에 에칭하는 방법, 또는 DC 스퍼터링이 아닌 이온 빔 스퍼터링을 사용하는 방법은 공정시간이 길어지고, 인-라인(in-line) 생산이 아니어서 생산성이 나빠지며, 그로 인해 대량 생산에 적합하지 않은 문제점이 있다.Secondly, etching after aluminum sputtering, or using ion beam sputtering rather than DC sputtering, takes longer processing time and is not in-line production, resulting in poor productivity. There is a problem that is not suitable for mass production.

따라서 본 발명은 상기와 같은 문제점을 해결하기 위해 안출한 것으로서, 역 적층 구조를 갖는 박막 광디스크에서 반사막의 표면 거칠기는 감소시켜, 광디스크 드라이브 상에서의 신호 노이즈를 최소화하는데 그 목적이 있다.Accordingly, an object of the present invention is to solve the above problems, and to reduce the surface roughness of the reflective film in the thin film optical disc having an inverse stacking structure, thereby minimizing signal noise on the optical disc drive.

도 1 은 일반적인 디스크의 적층 구조에서 각 계면의 표면 거칠기를 나타낸 도면1 is a view showing the surface roughness of each interface in a laminated structure of a general disk

도 2 는 일반적인 얇은 커버막 디스크의 적층 구조에서 각 계면의 표면 거칠기를 나타낸 도면2 is a diagram showing the surface roughness of each interface in a laminated structure of a general thin cover film disk;

도 3 은 본 발명에 따른 박막 광디스크의 구조를 나타낸 도면3 is a view showing the structure of a thin film optical disk according to the present invention;

도 4 는 본 발명에 따른 반사막에 SiO2의 첨가량에 따른 표면 거칠기를 나타낸 도면4 is a view showing the surface roughness according to the amount of SiO 2 added to the reflective film according to the present invention

*도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

10 : 기판20 : 반사층10 substrate 20 reflective layer

30, 50 : 유전체 보호층40 : 기록층30, 50: dielectric protective layer 40: recording layer

60 : 커버막60: cover film

상기와 같은 목적을 달성하기 위한 본 발명에 따른 박막 광디스크의 특징은 기판 위에 반사층, 상부 유전체 보호층, 기록층, 하부 유전체 보호층이 순서대로 적층되는 박막 광디스크에 있어서, 상기 반사층은 알루미늄(Al), 알루미늄 합금(Al alloy), 은(Ag) 또는 은 합금(Ag alloy) 중 어느 하나에 SiO2를 일정량 첨가되는데 있다.A thin film optical disc according to the present invention for achieving the above object is a thin film optical disc in which a reflective layer, an upper dielectric protective layer, a recording layer, and a lower dielectric protective layer are sequentially stacked on a substrate, wherein the reflective layer is aluminum (Al). A certain amount of SiO 2 is added to one of aluminum alloy, silver (Ag) and silver alloy (Ag alloy).

상기와 같은 목적을 달성하기 위한 본 발명에 따른 박막 광디스크의 다른 특징은 기판과, 상기 기판 위에 알루미늄(Al), 알루미늄 합금(Al alloy), 은(Ag) 또는 은 합금(Ag alloy) 중 어느 하나와 일정량 첨가된 SiO2로 30~300nm의 두께를 갖고 형성되는 반사층과, 상기 반사층 위에 ZnS-SiO2, SiO2, SiN, (ZrxCe1-x)yO1-y, AlN, Al2O3중 어느 하나로 10~50nm의 두께를 갖고 형성되는 제 1 유전체 보호층과, 상기 제 1 유전체 보호층 위에 GeTe-Sb2Te3계 물질로 10~30nm의 두께를 갖고 형성되는 기록층과, 상기 기록층 위에 ZnS-SiO2, SiO2, SiN, (ZrxCe1-x)yO1-y, AlN, Al2O3중 어느 하나로 50~300nm의 두께를 갖고 형성되는 제 2 유전체 보호층을 포함하여 구성되는데 있다.Another feature of the thin film optical disk according to the present invention for achieving the above object is a substrate, and any one of aluminum (Al), aluminum alloy (Al alloy), silver (Ag) or silver alloy (Ag alloy) on the substrate. And a reflective layer formed with a predetermined amount of SiO 2 having a thickness of 30 to 300 nm, and ZnS-SiO 2 , SiO 2 , SiN, (Zr x Ce 1-x ) y O 1-y , AlN, Al 2 on the reflective layer. A first dielectric protective layer formed of any one of O 3 having a thickness of 10 to 50 nm, a recording layer formed of a GeTe-Sb 2 Te 3 material having a thickness of 10 to 30 nm on the first dielectric protective layer; A second dielectric protection layer having a thickness of 50 to 300 nm formed of any one of ZnS-SiO 2 , SiO 2 , SiN, (Zr x Ce 1-x ) y O 1-y , AlN, and Al 2 O 3 on the recording layer. It is composed of layers.

이때 상기 첨가되는 SiO2의 량은 0.1~10 몰% 인데 또 다른 특징이 있다.In this case, the amount of SiO 2 added is 0.1 to 10 mol%, but there is another feature.

본 발명의 다른 목적, 특성 및 잇점들은 첨부한 도면을 참조한 실시예들의 상세한 설명을 통해 명백해질 것이다.Other objects, features and advantages of the present invention will become apparent from the following detailed description of embodiments taken in conjunction with the accompanying drawings.

본 발명에 따른 박막 광디스크의 바람직한 실시예에 대하여 첨부한 도면을 참조하여 설명하면 다음과 같다.A preferred embodiment of a thin film optical disc according to the present invention will be described with reference to the accompanying drawings.

도 3은 본 발명에 따른 박막 광디스크의 구조를 나타낸 도면이다.3 is a view showing the structure of a thin film optical disk according to the present invention.

도 3을 보면, 두께 1.1mm의 폴리카본네이트 기판(10) 위에 반사층(20), 상부 유전체 보호층(30), 기록층(40), 하부 유전체 보호층(60)을 순서대로 적층한다.Referring to FIG. 3, the reflective layer 20, the upper dielectric protective layer 30, the recording layer 40, and the lower dielectric protective layer 60 are sequentially stacked on the polycarbonate substrate 10 having a thickness of 1.1 mm.

그리고 그 위에 접착제를 이용해서 0.1mm의 얇은 커버 막(60)을 부착한다.And a thin cover film 60 of 0.1 mm is attached thereon using an adhesive.

이때 반사층(20)은 알루미늄(Al), 알루미늄 합금(Al alloy), 은(Ag) 또는 은 합금(Ag alloy)에 SiO2를 0.1~10 몰% 첨가하여 사용한다. 이는 첨가되는 SiO2의 양이 증가할수록 반사층(20)의 표면 거칠기가 작아지는 특성을 이용한 것이다.At this time, the reflective layer 20 is used by adding 0.1 to 10 mol% of SiO 2 to aluminum (Al), aluminum alloy (Al alloy), silver (Ag) or silver alloy (Ag alloy). This is because the surface roughness of the reflective layer 20 is reduced as the amount of SiO 2 added increases.

도 4 는 알루미늄에 첨가되는 SiO2양을 증가에 따라 변화되는 표면 거칠기를 나타낸 도면으로, 도 4와 같이 SiO2의 양이 증가함에 따라 표면 거칠기가 작아지는 것을 볼 수 있다.FIG. 4 is a view showing surface roughness that changes as the amount of SiO 2 added to aluminum increases. As shown in FIG. 4, the surface roughness decreases as the amount of SiO 2 increases.

다음으로 유전체 보호층(30)(50)은 주로 ZnS-SiO2를 사용하는데, 그 밖에 SiO2, SiN, (ZrxCe1-x)yO1-y, AlN, Al2O3등을 사용하여도 된다.Next, the dielectric protective layers 30 and 50 mainly use ZnS-SiO 2 , and in addition, SiO 2 , SiN, (Zr x Ce 1-x ) y O 1-y , AlN, Al 2 O 3 , and the like. You may use it.

그리고 기록층(30)은 종래의 GeTe-Sb2Te3계 물질을 사용한다.The recording layer 30 uses a conventional GeTe-Sb 2 Te 3 material.

이와 같이 구성된 본 발명에 따른 박막 광디스크 제조 방법은 다음과 같다.The thin film optical disc manufacturing method according to the present invention configured as described above is as follows.

폴리카본네이트 기판(10)위에 DC 혹은 RF 전자관(magnetron) 스퍼터닝 기법에 의해 아르곤(Ar)을 포함한 불활성 기체 이온을 알루미늄 합금-SiO2, ZnS-SiO2,GeSb-Sb2Te3타겟에 입사시켜 소정의 제조압력과 제조파워에 의하여 순서대로 성막시킨다.Joining the polycarboxylic carbonate substrate 10, an inert gas ion containing argon (Ar) by the DC or RF magnetron (magnetron) sputter techniques turning on the aluminum alloy -SiO 2, ZnS-SiO 2, GeSb-Sb 2 Te 3 target The film is formed in order by the predetermined production pressure and the production power.

이때, 각 층의 두께는 각각 반사층(20)인 알루미늄-SiO2층은 30~300nm, 상부 보호층(20)인 ZnS-SiO2유전체층은 10~50nm, 상변화형 기록 재생층(30)인 GeSb-Sb2Te3층은 10~30nm, 하부 보호층(50)인 ZnS-SiO2유전체층은 약 50~300nm로 한다.At this time, the thickness of each layer of each reflective layer 20 of aluminum -SiO 2 layer is 30 ~ 300nm, an upper protective layer 20, a ZnS-SiO 2 dielectric layer is 10 ~ 50nm, the phase-change type recording reproduction layer 30 The GeSb-Sb 2 Te 3 layer is 10-30 nm, and the lower protective layer 50, the ZnS-SiO 2 dielectric layer, is about 50-300 nm.

그리고 그 위에 얇은 커버막(60)을 접착한다.And a thin cover film 60 is adhered on it.

특히, 반사층(20)인 알루미늄-SiO2층의 경우는 Al-SiO2타겟을 사용하거나, 알루미늄과 SiO2타겟을 각각 사용하여 공동-스퍼터링(co-sputtering)한다.In particular, the aluminum-SiO 2 layer, which is the reflective layer 20, is co-sputtered using Al-SiO 2 targets or aluminum and SiO 2 targets, respectively.

이상에서 설명한 바와 같은 본 발명에 따른 박막 광디스크는 알루미늄(Al)과 SiO2의 혼합막을 반사층으로 사용함으로써, 표면 거칠기를 현격히 줄이고 신호 노이즈를 감소시키는 효과가 있다.As described above, the thin film optical disk according to the present invention uses a mixed film of aluminum (Al) and SiO 2 as a reflective layer, thereby significantly reducing surface roughness and reducing signal noise.

이상 설명한 내용을 통해 당업자라면 본 발명의 기술 사상을 이탈하지 아니하는 범위에서 다양한 변경 및 수정이 가능함을 알 수 있을 것이다.Those skilled in the art will appreciate that various changes and modifications can be made without departing from the spirit of the present invention.

따라서, 본 발명의 기술적 범위는 실시예에 기재된 내용으로 한정되는 것이 아니라 특허 청구의 범위에 의하여 정해져야 한다.Therefore, the technical scope of the present invention should not be limited to the contents described in the embodiments, but should be defined by the claims.

Claims (2)

기판 위에 반사층, 상부 유전체 보호층, 기록층, 하부 유전체 보호층이 순서대로 적층되는 박막 광디스크에 있어서,In a thin film optical disc in which a reflective layer, an upper dielectric protective layer, a recording layer, and a lower dielectric protective layer are sequentially stacked on a substrate, 상기 반사층은 알루미늄(Al), 알루미늄 합금(Al alloy), 은(Ag) 또는 은 합금(Ag alloy) 중 어느 하나에 산화물 또는 질화물을 일정량 첨가되는 것을 특징으로 하는 박막 광디스크.The reflective layer is a thin film optical disc, characterized in that a certain amount of oxide or nitride is added to any one of aluminum (Al), aluminum alloy (Al alloy), silver (Ag) or silver alloy (Ag alloy). 제 1 항에 있어서,The method of claim 1, 상기 첨가되는 산화물 또는 질화물의 량은 0.1~10 몰% 인 것을 특징으로 하는 박막 광 디스크.The amount of the oxide or nitride is added is a thin film optical disk, characterized in that 0.1 to 10 mol%.
KR10-2001-0023387A 2001-04-30 2001-04-30 thin film optical disc KR100421862B1 (en)

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