KR20020083599A - A tape for processing semiconductor wafer - Google Patents

A tape for processing semiconductor wafer Download PDF

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Publication number
KR20020083599A
KR20020083599A KR1020010022999A KR20010022999A KR20020083599A KR 20020083599 A KR20020083599 A KR 20020083599A KR 1020010022999 A KR1020010022999 A KR 1020010022999A KR 20010022999 A KR20010022999 A KR 20010022999A KR 20020083599 A KR20020083599 A KR 20020083599A
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KR
South Korea
Prior art keywords
wafer
tape
semiconductor wafer
adhesive
reinforcing plate
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KR1020010022999A
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Korean (ko)
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KR100689811B1 (en
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안승철
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삼성전자 주식회사
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Priority to KR1020010022999A priority Critical patent/KR100689811B1/en
Publication of KR20020083599A publication Critical patent/KR20020083599A/en
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Publication of KR100689811B1 publication Critical patent/KR100689811B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PURPOSE: A tape for processing a semiconductor wafer is provided to prevent a wrapage of a wafer by attaching a stiffener to a protection tape film. CONSTITUTION: An UV(Ultra Violet) adhesive(110) is coated on a wafer(100) having desired patterns. In order to prevent a wrapage of the wafer(100) due to friction heat during a CMP(Chemical Mechanical Polishing), a stiffener(120) having a desired elastic force and a desired strength is formed on the UV adhesive(110). Preferably, a plastic plate, an acryl plate or a glass substrate is used as the stiffener(120). Also, a protection tape film(130) is formed between the wafer(100) and the UV adhesive(110).

Description

반도체 웨이퍼 가공용 테이프{A tape for processing semiconductor wafer}Tape for processing semiconductor wafers {A tape for processing semiconductor wafer}

본 발명은 반도체 웨이퍼 가공용 테이프에 관한 것으로, 더욱 상세하게는 웨이퍼에 부착된 테이프가 웨이퍼의 랩페이지 발생을 방지할 수 있도록 한 반도체 웨이퍼 가공용 테이프에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a tape for semiconductor wafer processing, and more particularly, to a tape for semiconductor wafer processing in which a tape attached to a wafer can prevent generation of wrap pages of a wafer.

일반적으로 반도체 웨이퍼는 패키지로 가공되게 되는데, 이 반도체 웨이퍼를 패키지로 가공하는 공정에는 패키지 전 웨이퍼의 이면을 연마하는 공정이 포함되어있다. 이러한 이면 연마를 포함하는 일련의 단위 공정을 백 랩(Back Lap) 또는 백그라인드 공정이라고 한다.Generally, a semiconductor wafer is processed into a package, and the process of processing the semiconductor wafer into a package includes a process of polishing the back surface of the wafer before the package. A series of unit processes including such back grinding is called a back lap or backgrinding process.

이 백 랩 공정은 웨이퍼 제조공정과 어셈블리 공정 사이에 진행되며, 구체적으로 이면 연마 전공정, 테이프 부착 공정, 이면 연마 공정, 테이프 제거 공정 및 이면 연마 후공정의 순서로 진행된다.This back wrap process is carried out between the wafer fabrication process and the assembly process, and specifically, the back wrap process is performed in the order of the back surface polishing step, the tape applying step, the back polishing step, the tape removing step, and the back polishing step.

이러한 백 랩 공정 중 테이프 부착 공정은 후속되는 이면 연마 공정 중에 발생되는 실리콘 가루 등의 이물질로부터 웨이퍼의 패턴 형성면을 보호하기 위하여 패턴 형성면 상부에 테이프를 도포하는 공정이다.The tape attaching step of the back wrap process is a step of applying a tape over the pattern forming surface to protect the pattern forming surface of the wafer from foreign matter such as silicon powder generated during the subsequent back polishing process.

이 테이프 제거공정은 이면 연마 공정 후 웨이퍼 표면의 불필요하게 남아있는 테이프를 제거하기 위한 것으로 이러한 테이프 부착과 제거공정은 이면 연마 공정 중 웨이퍼의 패턴을 보호하기 위한 필수적인 공정이다.This tape removal process is to remove unnecessary tape on the wafer surface after the back surface polishing process. The tape attachment and removal process is an essential process for protecting the wafer pattern during the back surface polishing process.

한편, 이 이면연마 공정은 다이아몬드 휠에 의하여 웨이퍼의 이면을 연삭하게 된다. 그런데, 웨이퍼의 이면 연마 중에 다이아몬드 휠의 강한 회전에 의하여 웨이퍼의 이면에는 마찰열이 필연적으로 발생하게 되고, 이러한 마찰열로 웨이퍼는 종종 어느 정도 휘어지게 되는 현상이 발생하게 된다. 이러한 현상을 랩페이지(Wrapage)라고 한다.On the other hand, in this back grinding step, the back surface of the wafer is ground by a diamond wheel. However, frictional heat inevitably occurs on the back surface of the wafer due to the strong rotation of the diamond wheel during polishing of the back surface of the wafer, and the frictional heat often causes the wafer to be bent to some extent. This phenomenon is called wrappage.

이러한 랩페이지 불량은 웨이퍼의 구경이 커지거나 얇아질 수 록 더욱 심하게 발생되며, 또한 웨이퍼의 카세트 로딩/언로딩시에 웨이퍼의 부적절한 적재 또는 오류를 유발시키는 원인이 되기도 한다.Such lappage defects are more severe as the diameter of the wafer becomes larger or thinner, and may also cause improper loading or errors in the wafer during cassette loading / unloading of the wafer.

그런데, 종래의 웨이퍼 보호용 테이프의 경우는 UV접착제가 도포된 얇은 필름 형태로 되어있다. 따라서 이러한 웨이퍼 랩페이지 현상을 방지하지 못하고, 단지 웨이퍼의 패턴면을 이물질로부터 보호하는 기능밖에 수행하지 못하였다.By the way, in the case of the conventional tape for wafer protection, it is a thin film form to which the UV adhesive was apply | coated. Therefore, the wafer wrap page phenomenon cannot be prevented, and only the function of protecting the pattern surface of the wafer from foreign matter is performed.

본 발명은 전술한 문제점을 해결하기 위한 것으로, 본 발명의 목적은 웨이퍼의 이면 연마 공정중 사용되는 웨이퍼 보호용 테이프를 개선하여 웨이퍼의 랩페이지가 발생하는 것을 최소화시킬 수 있도록 한 반도체 웨이퍼 가공용 테이프를 제공하기 위한 것이다.SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a tape for processing a semiconductor wafer, which can minimize the occurrence of wrap page of the wafer by improving the wafer protective tape used during the back surface polishing process of the wafer. It is to.

도 1은 본 발명에 따른 반도체 웨이퍼 가공용 테이프를 도시한 단면도이다.1 is a cross-sectional view showing a tape for processing a semiconductor wafer according to the present invention.

도 2는 본 발명에 따른 반도체 웨이퍼 가공용 테이프의 다른 실시예를 도시한 단면도이다.2 is a cross-sectional view showing another embodiment of the tape for semiconductor wafer processing according to the present invention.

**도면의 주요부분에 대한 부호의 설명**** Description of the symbols for the main parts of the drawings **

100...웨이퍼100 ... wafer

110...접착물110 ... glue

120...보강판120.Reinforcement Plate

130...필름130 ... film

본 발명에 따른 반도체 웨이퍼 가공용 테이프는 반도체 웨이퍼의 이면 연마 공정중 상기 웨이퍼의 패턴면을 보호하도록 상기 패턴면 위에 부착되는 반도체 웨이퍼 가공용 테이프에 있어서, 상기 웨이퍼의 패턴면에 부착되도록 도포된 접착물; 상기 접착물에 의하여 상기 웨이퍼의 패턴면에 부착되되 상기 웨이퍼의 열변형을 방지하도록 하는 보강판을 구비한다.A semiconductor wafer processing tape according to the present invention comprises: a semiconductor wafer processing tape attached to the pattern surface to protect the pattern surface of the wafer during the backside polishing process of the semiconductor wafer, the tape comprising: an adhesive applied to adhere to the pattern surface of the wafer; It is provided with a reinforcing plate attached to the pattern surface of the wafer by the adhesive to prevent thermal deformation of the wafer.

그리고 바람직하게 본 발명에 반도체 웨이퍼 가공용 테이프에서 상기 보강판은 소정 두께의 플라스틱으로 마련된다.And preferably the reinforcing plate in the tape for semiconductor wafer processing in the present invention is provided with a plastic of a predetermined thickness.

또한, 다르게 상기 보강판은 소정 두께를 가지는 아크릴 판으로 마련된다.Alternatively, the reinforcement plate is provided with an acrylic plate having a predetermined thickness.

또한, 다르게 상기 보강판은 소정 두께를 가지는 유리판으로 마련된다.In addition, the reinforcement plate is alternatively provided with a glass plate having a predetermined thickness.

그리고 바람직하게 상기 보강판과 상기 접착물 사이에는 부착용 필름이 마련된 것을 특징으로 한다.And preferably between the reinforcing plate and the adhesive is characterized in that the film for attachment is provided.

이하에서는 본 발명에 따른 하나의 바람직한 실시예를 도면을 참조하여 보다상세히 설명하기로 한다.Hereinafter, one preferred embodiment according to the present invention will be described in detail with reference to the drawings.

본 발명에 따른 반도체 웨이퍼 가공용 테이프를 적용한 반도체 제조 공정은 웨이퍼 이면 연마를 위한 일련의 제조공정으로 테이프 도포, 이면 연마 그리고 테이프 제거 등의 공정에서 이루어진다.The semiconductor manufacturing process using the semiconductor wafer processing tape according to the present invention is a series of manufacturing processes for polishing the back surface of the wafer, and is performed in processes such as tape application, back surface polishing, and tape removal.

이와 같은 실시상태에서 본 발명에 다른 반도체 웨이퍼 가공용 테이프는 도 1에 도시된 바와 같이 패턴이 형성된 웨이퍼(100)의 패턴 형성면에 부착되는 것으로, 소정 두께로 된 보강판(120)을 구비하고, 이 보강판(120)의 접착면에 UV(Ultraviolet)에 반응하는 UV 접착물(110)이 도포되어 구성된다.In this embodiment, the semiconductor wafer processing tape according to the present invention is attached to the pattern forming surface of the patterned wafer 100 as shown in FIG. 1, and includes a reinforcing plate 120 having a predetermined thickness. The adhesive surface of the reinforcing plate 120 is configured by applying a UV adhesive 110 in response to UV (Ultraviolet).

여기서 본 발명의 테이프를 구성하는 보강판(120)은 이면 연마 공정시 마찰열에 의한 웨이퍼(100)의 랩페이지가 발생하지 않도록 소정 강도와 탄성력을 가지고, 동시에 UV 투과가 가능하도록 투명하게 구현될 수 있는 플라스틱판, 아크릴판 또는 유리기판이 선택적으로 적용되어 사용될 수 있다.Here, the reinforcing plate 120 constituting the tape of the present invention has a predetermined strength and elasticity so that the wrap page of the wafer 100 is not generated by frictional heat during the back surface polishing process, and may be transparently implemented to enable UV transmission at the same time. Plastic plates, acrylic plates or glass substrates may be optionally applied and used.

그리고 접착물(110)은 웨이퍼(100)의 패턴 형성면과 보강판(120) 사이에 마련되어 웨이퍼(100)와 보강판(120)의 상호 접착이 가능하도록 한다.And the adhesive 110 is provided between the pattern forming surface of the wafer 100 and the reinforcing plate 120 to enable mutual bonding of the wafer 100 and the reinforcing plate 120.

이 접착물(110)은 UV조사로 그 접착력이 낮아지는 아크립(acrylic/UV type) 접착물을 적용할 수 있는데, 이 아크립 접착물로는 아크릴 폴리머, UV 오리거머(UV origomer), 포토 이니쉐이터(Photo initiator) 등이 적용되어 사용될 수 있다.The adhesive 110 may be applied to an acrylic / UV type adhesive that the adhesive strength is lowered by UV irradiation, this acrylic adhesive, UV origomer (UV origomer), photo An initiator or the like may be applied and used.

한편, 본 발명에 따른 웨이퍼 가공용 보호 테이프의 다른 실시예로 도 2에 도시된 바와 같이 기존의 보호 테이프에 구성된 필름을 보강판 하부에 설치하여 구현할 수 있는데, 이러한 실시상태는 기존의 보호 테이프의 필름(130) 위에보강판(120)을 별도로 설치함으로써 가능하다.On the other hand, as another embodiment of the protective tape for wafer processing according to the present invention can be implemented by installing a film formed on the existing protective tape in the lower portion of the reinforcing plate as shown in Figure 2, this embodiment is a film of the conventional protective tape It is possible by separately installing the reinforcing plate 120 on the (130).

이러한 본 발명에 따른 웨이퍼 가공용 보호 테이프는 이면 연마 공정에 사용되게 된다. 일반적으로 반도체 웨이퍼(100)는 단일 실리콘 주괴(鑄傀)를 약 500 내지 1000㎛ 두께로 슬라이싱 하거나 소잉하여 제조되고, 이 제조된 웨이퍼(100)의 표면에 회로패턴을 형성한 후 웨이퍼(100)의 이면을 연마하여 웨이퍼(100)의 두께를 약 200 - 500㎛ 정도로 얇게 만드는 것이다.This protective tape for wafer processing according to the present invention is to be used in the back surface polishing process. In general, the semiconductor wafer 100 is manufactured by slicing or sawing a single silicon ingot to a thickness of about 500 to 1000 μm, and after forming a circuit pattern on the surface of the manufactured wafer 100, the wafer 100. The backside of the wafer is polished to make the thickness of the wafer 100 as thin as about 200-500 μm.

이와 같이 이면 연마 공정은 연마시 발생한 파티클에 의한 웨이퍼(100)의 회로 패턴을 보호할 수 있도록 먼저 웨이퍼(100)의 회로패턴 형성면에 보호 테이프를 부착한다.As described above, the back surface polishing process attaches a protective tape to the circuit pattern formation surface of the wafer 100 so as to protect the circuit pattern of the wafer 100 due to the particles generated during polishing.

이때의 보호 테이프 부착은 본 발명에서와 같이 접착물(110)이 도포된 보강판(120)을 웨이퍼(100)의 회로패턴 형성면 상부에 안착하여 부착시키고, 이후 웨이퍼의 이면을 연마기를 통하여 연마하여 웨이퍼(100)를 소정 두께로 가능한 한 얇게 연마하게 된다.In this case, the protective tape is attached to the upper surface of the circuit pattern forming surface of the wafer 100 by attaching the reinforcing plate 120 coated with the adhesive 110 as in the present invention, and then polishing the rear surface of the wafer through a polishing machine. Thus, the wafer 100 is polished as thin as possible to a predetermined thickness.

그리고 이러한 연마후 보강판(120)을 웨이퍼(100)로부터 제거하게 되는데, 이때의 제거는 UV를 조사하여 접착물(110)의 접착력이 저하되도록 한 후 보강판(120)을 웨이퍼(100)로부터 이탈시킴으로써 완료되게 된다. 그런 다음 몇몇 중간단계를 거친 후 웨이퍼(100)를 절단하는 소잉공정을 거치게 된다.After the polishing, the reinforcing plate 120 is removed from the wafer 100. At this time, the reinforcing plate 120 is removed from the wafer 100 after the UV irradiation is performed so that the adhesion of the adhesive 110 is lowered. It is done by leaving. Then, after several intermediate steps, the sawing process of cutting the wafer 100 is performed.

전술한 바와 같은 본 발명에 따른 반도체 웨이퍼 가공용 테이프는 이면 연마 공정시 발생한 마찰열에 의하여 웨이퍼가 굽어지는 현상, 즉 랩페이지가 발생하는 것을 방지할 수 있도록 보호 테이프에 보다 강도가 보강된 보강판을 구비시킨다는것이다. 그러므로 기본적으로 보호 테이프의 일면에 강도가 보강된 보강판을 설치하되, 이러한 보강판의 재질과 크기, 두께 및 접착물의 종류를 변형하거나 한정한 다른 변형된 실시예들은 모두 본 발명의 기술적 범주에 포함된다고 보아야 한다.The semiconductor wafer processing tape according to the present invention as described above is provided with a reinforcement plate reinforced with a protective tape to prevent the wafer bending due to frictional heat generated during the back polishing process, that is, to prevent the occurrence of wrap pages. Is to make it. Therefore, the reinforcement plate reinforced with strength is basically installed on one side of the protection tape, but all other modified embodiments that modify or limit the material, size, thickness and type of adhesive of the reinforcement plate are included in the technical scope of the present invention. You should see it.

이상과 같은 본 발명에 따른 반도체 웨이퍼 가공용 테이프는 웨이퍼의 이면 연마시 웨이퍼의 회로 패턴면에 부착되는 웨이퍼 보호용 테이프에 소정의 탄성력과 투명도를 가지며 소정의 강도를 가진 보강판을 부착하여 웨이퍼의 랩페이지를 방지할 수 있도록 하는 효과가 있다.The semiconductor wafer processing tape according to the present invention as described above is a wafer wrap page of the wafer by attaching a reinforcing plate having a predetermined elasticity and transparency and a predetermined strength to the wafer protective tape attached to the circuit pattern surface of the wafer when polishing the back surface of the wafer There is an effect to prevent the.

Claims (5)

반도체 웨이퍼의 이면 연마 공정중 상기 웨이퍼의 패턴면을 보호하도록 상기 패턴면 위에 부착되는 반도체 웨이퍼 가공용 테이프에 있어서,In the semiconductor wafer processing tape attached to the pattern surface to protect the pattern surface of the wafer during the back surface polishing process of the semiconductor wafer, 상기 웨이퍼의 패턴면에 부착되도록 도포된 접착물;An adhesive applied to adhere to the patterned surface of the wafer; 상기 접착물에 의하여 상기 웨이퍼의 패턴면에 부착되되 상기 웨이퍼의 열변형을 방지하도록 하는 보강판을 구비한 것을 특징으로 하는 반도체 웨이퍼 가공용 테이프.And a reinforcing plate attached to the pattern surface of the wafer by the adhesive to prevent thermal deformation of the wafer. 제 1항에 있어서, 상기 보강판은 소정 두께의 플라스틱판으로 마련된 것을 특징으로 하는 반도체 웨이퍼 가공용 테이프.The tape for semiconductor wafer processing according to claim 1, wherein the reinforcing plate is made of a plastic plate having a predetermined thickness. 제 1항에 있어서, 상기 보강판은 소정 두께를 가지는 아크릴판으로 마련된 것을 특징으로 하는 반도체 웨이퍼 가공용 테이프.The tape for semiconductor wafer processing according to claim 1, wherein the reinforcing plate is made of an acrylic plate having a predetermined thickness. 제 1항에 있어서, 상기 보강판은 소정 두께를 가지는 유리판으로 마련된 것을 특징으로 하는 반도체 웨이퍼 가공용 테이프.The tape for semiconductor wafer processing according to claim 1, wherein the reinforcing plate is formed of a glass plate having a predetermined thickness. 제 1항 내지는 제 4항 중의 어느 한 항에 있어서, 상기 보강판과 상기 접착물 사이에는 필름이 마련된 것을 특징으로 하는 반도체 웨이퍼 가공용 테이프.The tape for semiconductor wafer processing according to any one of claims 1 to 4, wherein a film is provided between the reinforcing plate and the adhesive.
KR1020010022999A 2001-04-27 2001-04-27 A tape for processing semiconductor wafer KR100689811B1 (en)

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CN110783178A (en) * 2019-11-01 2020-02-11 广东先导先进材料股份有限公司 Semiconductor wafer and processing method thereof

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JPH04185680A (en) * 1990-11-21 1992-07-02 Nec Corp Semiconductor device taped with carrier tape
JPH05198542A (en) * 1991-09-02 1993-08-06 Mitsui Toatsu Chem Inc Grinding method for rear of semiconductor wafer and adhesive tape used in the method
JPH05112761A (en) * 1991-10-16 1993-05-07 Sumitomo Bakelite Co Ltd Adhesive tape
JP3695303B2 (en) * 2000-10-06 2005-09-14 日立電線株式会社 TAB tape and semiconductor device using the same

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* Cited by examiner, † Cited by third party
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CN110783178A (en) * 2019-11-01 2020-02-11 广东先导先进材料股份有限公司 Semiconductor wafer and processing method thereof

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