KR20020081923A - Cleaning Method of Semiconductor Wafer - Google Patents
Cleaning Method of Semiconductor Wafer Download PDFInfo
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- KR20020081923A KR20020081923A KR1020010021473A KR20010021473A KR20020081923A KR 20020081923 A KR20020081923 A KR 20020081923A KR 1020010021473 A KR1020010021473 A KR 1020010021473A KR 20010021473 A KR20010021473 A KR 20010021473A KR 20020081923 A KR20020081923 A KR 20020081923A
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- cleaning
- semiconductor wafer
- wafer
- front surface
- photoresist film
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- 238000004140 cleaning Methods 0.000 title claims abstract description 79
- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims abstract description 33
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 20
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000008367 deionised water Substances 0.000 claims abstract description 16
- 239000000243 solution Substances 0.000 claims abstract description 12
- 239000011259 mixed solution Substances 0.000 claims abstract description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 26
- 239000007788 liquid Substances 0.000 claims description 22
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 12
- 229910021641 deionized water Inorganic materials 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 9
- 229910017855 NH 4 F Inorganic materials 0.000 claims description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 claims description 2
- 239000002245 particle Substances 0.000 abstract description 8
- 238000011109 contamination Methods 0.000 abstract description 6
- 235000011007 phosphoric acid Nutrition 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 46
- 239000000356 contaminant Substances 0.000 description 10
- 230000007547 defect Effects 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
-
- C11D2111/22—
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
본 발명은 반도체 장치의 제조방법에 관한 것으로서, 특히 반도체 웨이퍼의 세정 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a method for cleaning a semiconductor wafer.
반도체 장치의 제조에 있어서, 반도체 장치의 형성에 영향을 줄 수 있는 파티클(particle)이나 오염 물질을 제거하고 표면을 다른 불순물로부터 보호하기 위해 세정공정이 실시되고 있다. 그런데 상기 세정 공정, 특히 습식세정 공정은 한 웨이퍼의 앞면이 다른 웨이퍼의 뒷면에 인접하도록 배치한 상태로 전체 웨이퍼를 세정액에 담구는 방식으로 진행된다. 그 결과 세정 공정동안 한 웨이퍼의 뒷면에서 떨어져 나온 오염물질들이 액조 밖으로 배출되지 못하고 다른 웨이퍼의 앞면에 재부착되는 경우가 발생한다. 이처럼 반도체 웨이퍼의 앞면에 재부착된 상기 오염물질들은 반도체 장치 제조에 치명적 결함 유발 요인이 된다.BACKGROUND OF THE INVENTION In the manufacture of semiconductor devices, cleaning processes are carried out to remove particles and contaminants that may affect the formation of semiconductor devices and to protect the surface from other impurities. However, the cleaning process, in particular, the wet cleaning process proceeds by dipping the entire wafer in the cleaning liquid while the front surface of one wafer is disposed adjacent to the back surface of the other wafer. As a result, contaminants that fall off the back side of one wafer during the cleaning process cannot be discharged out of the bath and reattach to the front side of the other wafer. As described above, the contaminants reattached to the front surface of the semiconductor wafer cause a fatal defect in manufacturing a semiconductor device.
본 발명이 이루고자 하는 기술적 과제는 반도체 웨이퍼 뒷면에 형성된 오염물질을 제거하기 위한 반도체 웨이퍼의 세정방법을 제공하는데 있다.An object of the present invention is to provide a method for cleaning a semiconductor wafer for removing contaminants formed on the back surface of the semiconductor wafer.
도 1은 본 발명의 바람직한 실시예에 따른 반도체 웨이퍼의 세정 방법을 설명하기 위한 공정 순서도이다.1 is a flowchart illustrating a method of cleaning a semiconductor wafer according to a preferred embodiment of the present invention.
상기한 기술적 과제를 달성하기 위하여, 본 발명은 반도체 웨이퍼의 뒷면 및 측면의 오염물질을 제거하는데 효과적인 식각물질을 사용하는 반도체 웨이퍼의 세정방법을 제공한다. 이 방법은 반도체 웨이퍼의 앞면에 포토레지스트막을 형성하고, 상기 반도체 웨이퍼를 뒷면세정액으로 세정하고, 상기 세정된 반도체 웨이퍼에 잔존하는 세정액을 제거한 후, 상기 반도체 웨이퍼 앞면의 포토레지스트막을 제거하는 단계를 포함한다.In order to achieve the above technical problem, the present invention provides a method for cleaning a semiconductor wafer using an etching material effective to remove contaminants on the back and side surfaces of the semiconductor wafer. The method includes forming a photoresist film on the front surface of the semiconductor wafer, cleaning the semiconductor wafer with a backside cleaning liquid, removing the cleaning liquid remaining on the cleaned semiconductor wafer, and then removing the photoresist film on the front surface of the semiconductor wafer. do.
바람직하게는, 상기 뒷면세정액은 인산(H3PO4), 불산(HF), 과산화수소(H2O2) 및 탈이온수(de-ionized water)의 혼합용액으로 이루어진다. 상기 세정액은 인산, 불산, 과산화수소, 암모늄 플로라이드(NH4F) 및 탈이온수의 혼합용액 또는 인산, 불산, 암모늄 플로라이드 및 탈이온수의 혼합용액으로 이루어질 수도 있다.Preferably, the backside washing solution consists of a mixed solution of phosphoric acid (H 3 PO 4 ), hydrofluoric acid (HF), hydrogen peroxide (H 2 O 2 ) and de-ionized water. The cleaning solution may be composed of a mixed solution of phosphoric acid, hydrofluoric acid, hydrogen peroxide, ammonium fluoride (NH 4 F) and deionized water or a mixed solution of phosphoric acid, hydrofluoric acid, ammonium fluoride and deionized water.
이하, 첨부된 도면을 참조하여 본 발명의 바람직한 실시예를 상세히 설명하기로 한다. 그러나, 본 발명은 여기서 설명되어지는 실시예에 한정되지 않고 다른 형태로 구체화될 수도 있다. 오히려, 여기서 소개되는 실시예는 개시된 내용이 철저하고 완전해질 수 있도록 그리고 당업자에게 본 발명의 사상이 충분히 전달될 수 있도록 하기 위해 제공되어지는 것이다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments introduced herein are provided to ensure that the disclosed subject matter is thorough and complete, and that the spirit of the invention will be fully conveyed to those skilled in the art.
첨부한 도 1은 본 발명에 따른 반도체 웨이퍼의 세정방법을 설명하기 위한공정순서도이다.1 is a flowchart illustrating a method of cleaning a semiconductor wafer according to the present invention.
도 1을 참조하면, 본 발명에 따른 반도체 웨이퍼의 세정방법은 반도체 기판의 앞면에 포토레지스트막을 형성하고(10), 상기 포토레지스트막이 형성된 반도체기판을 뒷면세정액으로 세정하고(20), 반도체기판에 잔존하는 상기 뒷면세정액을 제거한 후(30), 반도체기판 앞면의 상기 포토레지스트막을 제거하는 단계(40)로 이루어지는 뒷면세정단계(100)를 포함한다. 그후 일반적인 세정 단계를 실시한다(50).Referring to FIG. 1, in the method of cleaning a semiconductor wafer according to the present invention, a photoresist film is formed on a front surface of a semiconductor substrate (10), a semiconductor substrate on which the photoresist film is formed is cleaned with a back surface cleaning liquid (20), and a semiconductor substrate is cleaned. After removing the remaining back surface cleaning solution 30, the back surface cleaning step 100 includes a step 40 of removing the photoresist film on the front surface of the semiconductor substrate. A general cleaning step is then performed (50).
상기 포토레지스트막을 형성하는 단계(10)에서, 상기 반도체기판은 반도체 장치로 사용될 구조체를 포함한다. 따라서 상기 세정 공정에서 사용되는 세정액에 의한 반도체 웨이퍼 앞면에 대한 손상을 방지해야한다. 이것이 상기 포토레지스트막을 형성하는 이유이다.In step 10 of forming the photoresist film, the semiconductor substrate includes a structure to be used as a semiconductor device. Therefore, it is necessary to prevent damage to the front surface of the semiconductor wafer by the cleaning liquid used in the cleaning process. This is the reason for forming the photoresist film.
상기 세정 단계(20)에서, 상기 포토레지스트막이 형성된 상기 반도체기판을 상기 뒷면세정액 속에 담금으로써 상기 포토레지스트막이 형성되지 않은 상기 반도체기판의 뒷면 및 측면을 세정한다.In the cleaning step 20, the semiconductor substrate on which the photoresist film is formed is immersed in the back cleaning liquid to clean the back and side surfaces of the semiconductor substrate on which the photoresist film is not formed.
일반적으로 반도체 웨이퍼의 뒷면 및 측면은 질화물, 산화물, 보론(B), 포스포로스(P), 알루미늄(Al), 철(F), 마그네슘(Mg) 및 폴리머를 포함하는 유기물 등의 오염물질로 덮여있다. 상기 질화물, 산화물, 보론, 포스포로스 등의 오염물질은 이전 공정에서 웨이퍼 앞면에 증착하는 물질에서 유래하며, 상기 알루미늄, 철, 마그네슘 및 폴리머를 포함하는 유기물 등의 오염물질은 공정이 진행되는 장비의 오염에서 유래한다.In general, the back and side surfaces of semiconductor wafers are covered with contaminants such as nitrides, oxides, boron (B), phosphorus (P), aluminum (Al), iron (F), magnesium (Mg) and organics including polymers. have. The contaminants such as nitride, oxide, boron, and phosphorus are derived from materials deposited on the front of the wafer in the previous process, and the contaminants such as aluminum, iron, magnesium, and polymers may be used in the process of the process. Results from pollution.
상기 오염물질들을 제거하기 위해, 상기 뒷면 세정액은 인산, 불산, 과산화수소 및 탈이온수의 혼합용액으로 이루어진 제 1 세정액을 사용한다. 상기 인산, 불산 및 과산화수소는 각각 40 중량퍼센트까지, 5 중량퍼센트까지 및 5 중량퍼센트까지로 혼합되는 것이 바람직하다. 나머지 중량퍼센트는 탈이온수로 구성된다.To remove the contaminants, the back side cleaning solution uses a first cleaning solution consisting of a mixed solution of phosphoric acid, hydrofluoric acid, hydrogen peroxide and deionized water. The phosphoric acid, hydrofluoric acid and hydrogen peroxide are preferably mixed up to 40 weight percent, up to 5 weight percent and up to 5 weight percent, respectively. The remaining weight percent consists of deionized water.
그런데 상기 세정 단계(20)는 습식의 방식으로 이루어지므로 웨이퍼의 뒷면뿐만이 아니라 웨이퍼의 앞면까지도 상기 세정액에 노출된다. 이때 웨이퍼 앞면에 형성된 상기 포토레지스트막은 일반적으로 내산성이 약하므로, 상기 세정 단계(20) 동안 반도체 웨이퍼의 앞면에 형성된 패턴들을 노출시킬 우려가 있다. 따라서, 웨이퍼 앞면의 포토레지스트막의 손상이 우려될 경우 상기 뒷면세정액의 pH 값을 조절할 필요가 있다.However, since the cleaning step 20 is performed in a wet manner, not only the back side of the wafer but also the front side of the wafer is exposed to the cleaning liquid. In this case, since the photoresist film formed on the front surface of the wafer is generally weak in acid resistance, there is a fear that the patterns formed on the front surface of the semiconductor wafer are exposed during the cleaning step 20. Therefore, when the photoresist film is damaged on the front side of the wafer, it is necessary to adjust the pH value of the back side cleaning liquid.
그러한 방법의 하나로, 상기 세정단계(20)에서 인산, 불산, 과산화수소, 암모늄 플로라이드 및 탈이온수의 혼합용액으로 이루어진 제 2 세정액을 사용할 수도 있다. 상기 제 2 세정액은 상기 제 1 세정액에 비해 상기 암모늄 플로라이드가 추가됨으로써, 상기 제 2 세정액은 5 이상의 pH 값을 갖도록 조절할 수 있다. 그 결과 상기 웨이퍼 앞면에 도포된 포토레지스트막에 대한 손상을 감소시키게 된다.As one such method, a second cleaning liquid consisting of a mixed solution of phosphoric acid, hydrofluoric acid, hydrogen peroxide, ammonium fluoride and deionized water may be used in the cleaning step 20. The second cleaning liquid may be adjusted to have a pH value of 5 or more by adding the ammonium fluoride as compared to the first cleaning liquid. As a result, damage to the photoresist film applied to the front surface of the wafer is reduced.
상기 제 2 세정액은 상기 인산, 불산, 과산화수소 및 암모늄 플로라이드는 각각 40 중량퍼센트까지, 5 중량퍼센트까지, 5 중량퍼센트까지 및 30 중량퍼센트까지로 혼합되는 것이 바람직하다. 나머지 중량퍼센트는 탈이온수로 구성된다.Preferably, the second rinse is mixed with up to 40 weight percent, up to 5 weight percent, up to 5 weight percent and up to 30 weight percent of the phosphoric acid, hydrofluoric acid, hydrogen peroxide and ammonium fluoride, respectively. The remaining weight percent consists of deionized water.
상기 웨이퍼 앞면의 포토레지스트막의 손상을 방지하기 위한 또다른 방법은 인산, 불산, 암모늄 플로라이드 및 탈이온수의 혼합용액으로 이루어진 제 3 세정액을 상기 세정 단계(20)에서 사용하는 것이다. 상기 제 3 세정액은 상기 제 2 세정액에 포함된 과산화수소를 제외한 세정액으로, 상기 제 1 및 제 2 세정액에 비해 더 높은 pH 값을 갖는다. 상기 과산화수소가 폴리머를 포함하는 유기물 제거를 목적으로 사용된다는 점에서, 상기 제 3 세정액은 반도체 웨이퍼가 폴리머를 포함한 유기물에 의한 오염이 우려되지 않는 경우에 사용되는 것이 바람직하다.Another method for preventing damage to the photoresist film on the front side of the wafer is to use a third cleaning liquid consisting of a mixed solution of phosphoric acid, hydrofluoric acid, ammonium fluoride and deionized water in the cleaning step 20. The third cleaning liquid is a cleaning liquid excluding hydrogen peroxide included in the second cleaning liquid, and has a higher pH value than the first and second cleaning liquids. Since the hydrogen peroxide is used for the purpose of removing the organic matter containing the polymer, the third cleaning liquid is preferably used when the semiconductor wafer is not concerned about contamination by the organic matter including the polymer.
상기 제 3 세정액은 상기 인산, 불산 및 암모늄 플로라이드는 각각 40 중량퍼센트까지, 5 중량퍼센트까지 및 30 중량퍼센트까지로 혼합되는 것이 바람직하다. 나머지 중량퍼센트는 탈이온수로 구성된다.Preferably, the third cleaning liquid is mixed with up to 40 weight percent, up to 5 weight percent and up to 30 weight percent of the phosphoric acid, hydrofluoric acid, and ammonium fluoride, respectively. The remaining weight percent consists of deionized water.
상기 제 1, 2 또는 3 세정액을 사용하는 세정단계(20)은 모두 상온에서 70℃까지의 온도에서, 1분에서 30분까지의 시간동안 실시하는 것이 바람직하다.The washing step 20 using the first, second or third cleaning solution is preferably carried out at a temperature from room temperature to 70 ℃, for a time from 1 minute to 30 minutes.
상기 세정단계(20)를 거친 반도체 웨이퍼에 잔존하는 상기 뒷면 세정액을 제거하기 위하여 탈이온수를 이용한 린스공정을 진행하고 다시 잔류하는 상기 탈이온수를 제거하기 위한 드라이 공정을 진행한다(30).A rinse process using deionized water is performed to remove the back cleaning liquid remaining on the semiconductor wafer which has passed through the cleaning step 20, and a dry process is performed to remove the remaining deionized water again (30).
상기 뒷면 세정액 제거 단계(30)를 거친 상기 반도체기판의 앞면에 잔존하는 상기 포토레지스트막을 제거한다(40).The photoresist film remaining on the front surface of the semiconductor substrate passed through the back cleaning liquid removal step 30 is removed (40).
상기 포토레지스트막이 제거된 반도체 웨이퍼에 대하여 일반적인 세정 공정을 진행한다(50). 상기한 뒷면세정단계(100)은 통상의 세정 공정에서 웨이퍼 뒷면의 오염이 전면으로 옮겨지는 현상을 억제하는 것이 목적이므로 상기 일반 세정 단계(50) 전에 실시하는 것이 바람직하다. 따라서 상기한 뒷면 세정단계(100)를 전 단계로 가지는 상기 일반 세정단계(50)는 특정될 필요없이 웨이퍼 뒷면의 오염에원인을 갖는 웨이퍼 전면의 불량이 우려될때는 언제든지 실시할 수 있다.A general cleaning process is performed on the semiconductor wafer from which the photoresist film is removed (50). The back cleaning step 100 is preferably performed before the general cleaning step 50 because the purpose of suppressing the phenomenon that the contamination of the back surface of the wafer is transferred to the front surface in a normal cleaning process. Therefore, the general cleaning step 50 having the back cleaning step 100 as a previous step may be performed at any time when a defect on the front surface of the wafer having a cause of contamination on the back surface of the wafer is not required.
상기한 본 발명에 따른 세정방법을 사용하여 반도체 웨이퍼를 세정한 결과, 표 1과 같은 결과를 얻었다. 상기 표 1은 6장의 동일한 웨이퍼에 대하여 세정 전과 세정 후로 나누어 실시된 결과이다. 세정 전 발생된 웨이퍼당 파티클의 수는 적어도 50000개 이상이었으나, 상기 본 발명에 따른 세정 방법으로 세정한 결과 16771개의 파티클만이 잔존하였다.The semiconductor wafer was cleaned using the cleaning method according to the present invention described above, and the results shown in Table 1 were obtained. Table 1 shows results obtained by dividing the same wafers of six sheets before and after cleaning. The number of particles per wafer generated before cleaning was at least 50,000, but as a result of cleaning by the cleaning method according to the present invention, only 16771 particles remained.
또한 상기 뒷면세정 단계(100)를 실시하지 않고 상기 일반세정 단계(50)를 실시한 웨이퍼에서는 웨이퍼 앞면에 바(bar) 형태의 파티클 집단이 불량검사 장비에서 검출되는데 반해, 상기 뒷면세정단계(100)를 실시한 후 상기 일반세정 단계(50)를 실시한 웨이퍼에서는 상기 바 형태의 파티클 집단이 검출되지 않았다. 상기 바 형태의 파티클 집단은 웨이퍼 뒷면 오염에 원인을 갖는 불량의 전형적인 유형으로, 상기 결과로부터 본 발명의 세정 방법이 반도체 웨이퍼의 뒷면 및 측면에 형성된 오염물질들을 제거하는데 효과적임을 알 수 있다.In addition, in the wafer in which the general cleaning step 50 is performed without performing the back cleaning step 100, a bar-shaped particle group is detected on the wafer front surface by the defect inspection equipment, whereas the back cleaning step 100 is performed. The bar-shaped particle population was not detected from the wafer on which the general cleaning step 50 was performed. The bar-shaped particle population is a typical type of defect that causes backside contamination of the wafer, and from the above results it can be seen that the cleaning method of the present invention is effective in removing contaminants formed on the backside and side of the semiconductor wafer.
본 발명은 반도체 웨이퍼 뒷면의 세정방법을 제공함으로써 웨이퍼 뒷면의 오염에 원인을 갖는 반도체 불량을 억제할 수 있고, 그 결과 반도체 생산 수율을 높일 수 있다.According to the present invention, by providing a method for cleaning a semiconductor wafer backside, semiconductor defects caused by contamination on the backside of the wafer can be suppressed, and as a result, semiconductor production yield can be improved.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7566666B2 (en) | 2005-08-08 | 2009-07-28 | Samsung Electronics Co., Ltd. | Composition for removing an insulation material and related methods |
| US7851372B2 (en) | 2005-10-17 | 2010-12-14 | Samsung Electronics Co., Ltd. | Composition for removing an insulation material, method of removing an insulation layer and method of recycling a substrate using the same |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7566666B2 (en) | 2005-08-08 | 2009-07-28 | Samsung Electronics Co., Ltd. | Composition for removing an insulation material and related methods |
| US7842623B2 (en) | 2005-08-08 | 2010-11-30 | Samsung Electronics Co., Ltd. | Composition for removing an insulation material and related methods |
| US7851372B2 (en) | 2005-10-17 | 2010-12-14 | Samsung Electronics Co., Ltd. | Composition for removing an insulation material, method of removing an insulation layer and method of recycling a substrate using the same |
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