KR20020078582A - Selective etchant formulation for ito film - Google Patents
Selective etchant formulation for ito film Download PDFInfo
- Publication number
- KR20020078582A KR20020078582A KR1020010018352A KR20010018352A KR20020078582A KR 20020078582 A KR20020078582 A KR 20020078582A KR 1020010018352 A KR1020010018352 A KR 1020010018352A KR 20010018352 A KR20010018352 A KR 20010018352A KR 20020078582 A KR20020078582 A KR 20020078582A
- Authority
- KR
- South Korea
- Prior art keywords
- etching
- ito film
- molybdenum
- solution
- acid
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
- C04B41/5338—Etching
- C04B41/5353—Wet etching, e.g. with etchants dissolved in organic solvents
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
- C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
Abstract
Description
본 발명은 액정표시장치 등에 투명전극용 미세패턴으로 사용되는 산화인듐주석막 이하 ITO막으로 칭한다)인 투명도전막의 선택적 에칭액 조성물에 관한 것이다.The present invention relates to a selective etching liquid composition of a transparent conductive film, which is referred to as an indium tin oxide film or ITO film, which is used as a fine pattern for transparent electrodes in a liquid crystal display device or the like.
투명도전막은 트랜지스터 액정표시장치, 플라즈마 디스플레이 패널표시장치, 일렉트로 루미네센스 표시장치등 폭넓게 사용되고 있는 것으로서, 상기 표시장치에 투명전극을 형성하기 위해서는 미세패턴을 형성하는 에칭공정이 필요하다.Transparent conductive films are widely used in transistor liquid crystal display devices, plasma display panel display devices, electro luminescence display devices, and the like. In order to form transparent electrodes on the display devices, an etching process for forming fine patterns is required.
이때 사용되는 투명 전극막으로서는 ITO막이 사용되고 있으며, 상기 ITO막의 사용은 유리기판 위에 ITO막을 형성시킨 다음 포토레지스터를 마스크로서 도포한 후 ITO막을 에칭하게 되는 것으로 기존의 ITO막용 에칭액으로는 염산·질산혼합액(왕수), 염화제이철수용액, 요소산수용액, 인산수용액, 옥살산(수산)수용액등이 사용되고 있지만, 이러한 종래의 ITO막용 에칭액들은 다음과 같은 문제점을 내재하고 있다.In this case, an ITO film is used as the transparent electrode film used. The ITO film is formed by forming an ITO film on a glass substrate, applying a photoresist as a mask, and then etching the ITO film. As an etching solution for an ITO film, a mixture of hydrochloric acid and nitric acid is used. (Aqua regia), ferric chloride solution, urea acid solution, phosphoric acid solution, oxalic acid (aqueous acid) solution and the like are used, but such conventional etching solutions for ITO membranes have the following problems.
첫째, 염산·질산혼합액은 에칭속도는 크고 안정되어있지만, 액의 경시변화가 나타나는 점과 박막트랜지스터 액정표시장치의 박막트랜지스터 제조 공정에서 게이트 전극으로 사용되고 있는 몰리브덴 또는 몰리브덴·텅스텐합금과 알루미늄 또는 알루미늄·네오디늄 합금을 에칭시키는 단점이 있다.First, although the hydrochloric acid and nitric acid mixture has high etching speed and stability, molybdenum, molybdenum, tungsten alloy, aluminum, aluminum, aluminum, and aluminum are used as gate electrodes in the process of liquid temporal change and thin film transistor manufacturing process of thin film transistor liquid crystal display. There is a drawback to etching neodymium alloys.
둘째, 염화제이철 수용액은 에칭속도는 크고 안정되어 있지만, 상대적으로 측면 에칭량이 크고 철의 오염을 유발시키는 단점이 있다.Second, the ferric chloride solution has a large etching rate and is stable, but has a relatively large amount of side etching and causes iron contamination.
셋째, 요소산수용액은 측면 에칭량이 적고 양호한 에칭특성을 가지지만, 액의 경시변화가 큰 단점이 있다.Third, the urea acid aqueous solution has a small amount of side etching and has good etching characteristics, but has a disadvantage of large change with time of the liquid.
넷째, 인산수용액은 게이트 전극으로 사용되는 몰리브덴 또는 몰리브덴·텅스텐합금과 알루미늄 또는 알루미늄·네오디늄 합금을 에칭시키는 단점이 있다.Fourth, the aqueous solution of phosphoric acid has the disadvantage of etching the molybdenum or molybdenum tungsten alloy and aluminum or aluminum neodymium alloy used as the gate electrode.
다섯째, 옥살살(수산)수용액은 에칭특성이 안정되어 있고 액의 경시변화도 일어나지 않아 양호하지만 에칭시 잔사가 발생하기 쉬운 단점을 가지고 있다.Fifth, the oxal (aquatic) aqueous solution is good because the etching characteristics are stable and does not change with time of the liquid is good, but it has a disadvantage that residues occur easily during etching.
본 발명은 기존의 ITO막용 에칭액인 염산·질산혼합액(왕수), 염화제이철수용액, 요소산수용액, 인산수용액, 옥살산(수산)수용액 사용시 발생되는 측면 에칭현상, 경시변화현상, 에칭시 잔사 발생현상, 알루미늄 또는 알루미늄·네오디늄 합금과 몰리브덴 또는 몰리브덴·텅스텐합금의 금속막의 에칭현상등의 단점을 해결할수 있는 ITO막용 선택적 에칭액의 조성물을 제공하기 위한 것으로서 ITO막용 에칭액의 주성분이 염산과 초산과 물로 구성되어 있어 잔사 발생현상과 몰리브덴 또는 몰리브덴·텅스텐합금의 박막을 에칭시키는 현상을 제거하여 ITO막의 선택적 패턴에칭을 가능하게 한 것이다.The present invention is a side etching phenomenon, time-varying phenomenon, residue occurrence during etching, using a mixture of hydrochloric acid and nitric acid (aqua regia), ferric chloride solution, urea acid solution, phosphate solution, oxalic acid (aqueous acid) solution which is a conventional etching solution for ITO film, It is to provide a composition of selective etching solution for ITO membrane that can solve the disadvantages of etching of aluminum or aluminum-neodynium alloy and molybdenum or molybdenum-tungsten alloy metal film.The main component of ITO etching solution is composed of hydrochloric acid, acetic acid and water. Therefore, the phenomenon of residue generation and the phenomenon of etching a thin film of molybdenum or molybdenum tungsten alloy are eliminated to enable selective pattern etching of the ITO film.
본 발명은 투명전극막인 ITO막을 패턴에칭 할 경우에 에칭시 잔사 발생이 없으며, 또한 전극재료로 주로 사용되는 몰리브덴 또는 몰리브덴·텅스텐 합금을 에칭시키지 않는 에칭 선택성을 가지도록한 ITO막용 수용성 에칭액이다.The present invention is a water-soluble etching solution for an ITO film which has no residue during etching when etching an ITO film, which is a transparent electrode film, and has an etching selectivity not to etch molybdenum, molybdenum tungsten alloy, which is mainly used as an electrode material.
이러한 본 발명의 ITO막 에칭액의 조성은 염산과 초산을 주성분으로한 수용액이며, 몰리브덴 또는 몰리브덴·텅스텐합금에 대한 에칭선택성과 에칭의 제 특성을 조정하기 위하여는 염산과 초산의 농도를 조정하여 사용한다.The composition of the ITO film etching solution of the present invention is an aqueous solution mainly composed of hydrochloric acid and acetic acid, and the concentration of hydrochloric acid and acetic acid is adjusted to adjust the etching selectivity of molybdenum or molybdenum tungsten alloy and the characteristics of etching. .
본 발명의 ITO막용 에칭액의 바람직한 조성은 염산 (0.5-10 wt%) + 초산 (0.5-10 wt%)이 가장 적합하며 상기 에칭액의 조성중 잔여부분은 물로 구성된다.The preferred composition of the etching solution for the ITO film of the present invention is hydrochloric acid (0.5-10 wt%) + acetic acid (0.5-10 wt%), and the remaining portion of the composition of the etching solution consists of water.
본 발명의 ITO막용 에칭액은 박막트랜지스터 액정표시장치, 플라즈마 디스플레이 패널의 표시장치 등에서와 같이 미세패턴으로 형성된 ITO막의 패턴에칭을 위하여 적용할 경우 종래의 ITO막용 에칭액과는 달리 잔사 발생이나 몰리브덴 또는 몰레브덴·텅스텐합금의 에칭현상과 같은 문제점이 발생하지 않기 때문에 제조원가 절감과 공정수율을 향상시키는 효과를 가져오게 된다.When the etching solution for ITO film of the present invention is applied for pattern etching of an ITO film formed in a fine pattern, such as in a thin film transistor liquid crystal display device, a display device of a plasma display panel, etc., unlike the conventional etching solution for ITO film, residue or molybdenum or molybdenum Since problems such as etching of the den tungsten alloy do not occur, the manufacturing cost is reduced and the process yield is improved.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020010018352A KR20020078582A (en) | 2001-04-06 | 2001-04-06 | Selective etchant formulation for ito film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020010018352A KR20020078582A (en) | 2001-04-06 | 2001-04-06 | Selective etchant formulation for ito film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20020078582A true KR20020078582A (en) | 2002-10-19 |
Family
ID=27700108
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020010018352A KR20020078582A (en) | 2001-04-06 | 2001-04-06 | Selective etchant formulation for ito film |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR20020078582A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19980044186A (en) * | 1996-12-06 | 1998-09-05 | 구자홍 | Thin film transistor and its manufacturing method |
| KR20010004016A (en) * | 1999-06-28 | 2001-01-15 | 김영환 | Method of manufacturing TFT-LCD |
| JP2002198616A (en) * | 2000-12-25 | 2002-07-12 | Fujitsu Quantum Devices Ltd | Method of manufacturing semiconductor device, and method of manufacturing optical waveguide |
-
2001
- 2001-04-06 KR KR1020010018352A patent/KR20020078582A/en not_active Application Discontinuation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19980044186A (en) * | 1996-12-06 | 1998-09-05 | 구자홍 | Thin film transistor and its manufacturing method |
| KR20010004016A (en) * | 1999-06-28 | 2001-01-15 | 김영환 | Method of manufacturing TFT-LCD |
| JP2002198616A (en) * | 2000-12-25 | 2002-07-12 | Fujitsu Quantum Devices Ltd | Method of manufacturing semiconductor device, and method of manufacturing optical waveguide |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4940212B2 (en) | Etching solution composition for forming metal wiring for TFT-LCD | |
| KR101216651B1 (en) | etching composition | |
| JP4926162B2 (en) | Etching solution composition for forming metal wiring for thin film transistor liquid crystal display device | |
| JP2009033140A (en) | Electrode of aluminum-alloy film with low contact resistance, method of manufacturing the same, and display device | |
| JP4949416B2 (en) | Etching solution composition for ITO film and method for etching ITO film using the same | |
| JP4778716B2 (en) | Etching composition | |
| JPH0660744A (en) | Manufacture of conductive pattern of tin-added indium oxide (ito) on substrate | |
| KR100440343B1 (en) | HIGH SELECTIVE Ag ETCHANT-1 | |
| JP2007142409A (en) | Transparent conductive film etching composition | |
| JP2001176864A (en) | Composition of etching liquid for transparent conductive film | |
| KR20040097586A (en) | Selective Etchant Formulation for ITO and IZO Film | |
| KR20020078582A (en) | Selective etchant formulation for ito film | |
| KR100440344B1 (en) | HIGH SELECTIVE Ag ETCHANT-2 | |
| KR100415319B1 (en) | Etchant formulation for ITO film | |
| KR100765140B1 (en) | Etchant composition For Etching Both Aluminium And ITO | |
| JP3502365B2 (en) | Etching composition for transparent conductive film | |
| KR20010075932A (en) | Gate electrode etching liquid in LCD display system | |
| KR20040097584A (en) | Etchant formulation for IZO film of FPD | |
| CN110484258B (en) | Etchant composition for indium oxide layer | |
| KR20030078208A (en) | Etchant for making metal electrodes of TFT in FPD | |
| JP2002033304A (en) | Composition for etching | |
| KR20050122122A (en) | Etchant composition for pixel layer of fpd | |
| KR101796784B1 (en) | Manufacturing method of an array substrate for liquid crystal display | |
| KR102384563B1 (en) | Composition for Etching Indium Oxide Layer | |
| KR101845084B1 (en) | Manufacturing method of an array substrate for liquid crystal display |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application |