KR20020075669A - Siloxane-based resin and method for forming insulating film between metal layers in semiconductor using the same - Google Patents

Abstract

PURPOSE: Provided are a siloxane-based resin, which can easily form an insulating film having low dielectric constant in producing highly integrated semiconductor, and a method for forming an interlayer insulating film of semiconductor by using the same. CONSTITUTION: The siloxane-based resin is produced by hydrolyzing a cage type siloxane compound having the structure of formula 1a, 1b or 1c, and a cyclic siloxane compound having the structure of formula 2, or a silane compound having the structure of formula 3: RSiX1X2X3, into organic solvent in the presence of an acid catalyst, and polycondensing the above compounds. In the formulae, R represents hydrogen atom, alkyl group of C1-C3, cyclic alkyl group of C3-C10, or aryl group of C6-C15; each of X1, X2 and X3 independently represents an alkyl group of C1-C3, alkoxy group of C1-C10, or halogen atom; p is an integer of 3-8; m is an integer of 1-10; and n is an integer of 1-12.

Description

Siloxane-based resin and method for forming insulating film between metal layers in semiconductor using the same}

The present invention relates to a siloxane-based resin and a method for forming a semiconductor interlayer insulating film using the same, and more particularly, to prepare a cage-type siloxane compound and a cyclic siloxane compound or silane compound in the organic solvent by hydrolysis and condensation polymerization in the presence of an acid catalyst. A novel siloxane resin and a method for forming a semiconductor interlayer insulating film are used as the low dielectric insulating film of a semiconductor.

As the degree of integration of a semiconductor increases, the performance of the device depends on the wiring speed, and in order to reduce the resistance and capacity in the wiring, it is required to lower the storage capacitance of the interlayer insulating film. In this regard, U.S. Patent Nos. 3,615,272, 4,399,266 and 4,999,397 use SOD (Spin on Deoposition) instead of SiO _{2 with a} dielectric constant of 4.00, which is used in conventional chemical vapor deposition (CVD) to form a semiconductor interlayer insulating film. An example of using a polysilsesquioxane having a dielectric constant of about 2.5 to 3.1 is disclosed, and in this case, it was possible to apply the spin coating method due to excellent planarization characteristics.

The polysilsesquioxane and its preparation method are already known in the art. For example, US Pat. No. 3,615,272 discloses a resin by hydrolyzing trichlorosilane in a benzenesulfonic acid hydrate hydrolysis medium, and then A method for producing a essentially fully condensed polysilsesquioxane resin is disclosed by washing the resin with water or aqueous sulfuric acid. In addition, U.S. Patent No. 5,010,159 discloses a method for producing a polysilsesquioxane resin comprising hydrolyzing hydrosilane in an arylsulfonic acid hydrate hydrolysis medium to form a resin, and then contacting the resin with a neutralizing agent. have.

However, the use of such polysilsesquioxane resin alone is not sufficient to lower the dielectric constant of the high-density semiconductor interlayer insulating film, and there is a demand for development of a new resin capable of achieving lower dielectric constant.

Accordingly, the present invention provides a method of preparing a siloxane copolymer having a very low dielectric constant using a cage-type siloxane compound and a cyclic siloxane compound or a silane compound as a unit, and forming a low dielectric semiconductor interlayer insulating film using the copolymer. For the purpose.

That is, one aspect of the present invention provides a caged siloxane compound having a structure of Formula 1a, 1b or 1c and a cyclic siloxane compound having a structure of Formula 2 or a silane compound having a structure of Formula 3 in an organic solvent. It provides a siloxane resin prepared by hydrolysis and condensation polymerization in the presence.

RSiX ₁ X ₂ X ₃

In the above formula,

R is a hydrogen atom, a C ₁ -C ₃ alkyl group, a C ₃ -C ₁₀ cyclic alkyl group, or a C ₆ -C ₁₅ aryl group; X ₁ , X ₂ and X ₃ are each independently a C ₁ to C ₃ alkyl group, a C ₁ to C ₁₀ alkoxy group or a halogen atom; p is an integer from 3 to 8; m is an integer from 1 to 10; n is an integer from 1 to 12.

Another aspect of the invention provides a method for forming a semiconductor interlayer insulating film comprising the step of dissolving the siloxane-based resin in an organic solvent and coating on a silicon substrate, followed by thermal curing.

Hereinafter, the siloxane resin of the present invention will be described in more detail.

The siloxane-based resin of the present invention is a copolymer prepared by hydrolysis and condensation polymerization of a cage-type siloxane unit and a cyclic siloxane unit or a general silane unit in an organic solvent in the presence of an acid catalyst.

Cage-type siloxane units used in the production of siloxane resins of the present invention are compounds having a cyclic structure in which silicon atoms in a ring and inter-rings are connected to each other through an oxygen atom, and having at least one functional group capable of hydrolysis at the terminal. A group is included and may be represented by the following Chemical Formulas 1a, 1b and 1c.

[Formula 1a]

[Formula 1b]

[Formula 1c]

In Chemical Formulas 1a to 1c,

X ₁ , X ₂ and X ₃ are each independently C ₁ -C ₃ alkyl group, C ₁ -C ₁₀ alkoxy group or halogen atom; n is an integer from 1 to 12.

The cage-type siloxane unit is a siloxane-based unit in which a commercially available terminal functional group is a halogen group as it is, or is used after converting the halogen group of the terminal into an alkyl group or an alkoxy group, if necessary. The method used for such a conversion is not particularly limited as long as the object of the present invention is not impaired, and any method known in the art may be used, for example, when the halogen group at the terminal is to be converted into an alkoxy group. It can be easily accomplished by reacting with alcohol and triethylamine.

Cyclic siloxane units used in the production of the siloxane resin of the present invention is a compound having a cyclic structure in which silicon atoms are connected to each other through an oxygen atom, and includes an organic group having at least one functional group capable of hydrolysis at the terminal, It can be represented by two.

[Formula 2]

In Chemical Formula 2,

R is a hydrogen atom, a C ₁ -C ₃ alkyl group, a C ₃ -C ₁₀ cyclic alkyl group, or a C ₆ -C ₁₅ aryl group; X ₁ , X ₂ and X ₃ are each independently a C ₁ to C ₃ alkyl group, a C ₁ to C ₁₀ alkoxy group or a halogen atom; p is an integer from 3 to 8; m is an integer of 1-10.

The cyclic siloxane units may be prepared through, for example, a hydrosilylation reaction using a metal catalyst, but the production method is not particularly limited unless the object of the present invention is impaired.

The silane-based unit used in the production of the siloxane resin of the present invention is a conventional silane compound having a structure in which at least one functional group capable of hydrolysis is substituted on a silicon atom, and may be represented by the following Chemical Formula 3.

[Formula 3]

RSiX ₁ X ₂ X ₃

In Chemical Formula 3,

R is a hydrogen atom, a C ₁ -C ₃ alkyl group, a C ₃ -C ₁₀ cyclic alkyl group, or a C ₆ -C ₁₅ aryl group; X ₁ , X ₂ and X ₃ are each independently a C ₁ to C ₃ alkyl group, a C ₁ to C ₁₀ alkoxy group or a halogen atom.

In preparing the siloxane resin of the present invention, the molar ratio between the cage-type siloxane compound and the cyclic siloxane compound or the silane compound is in the range of 0.1: 99.9 to 99.9: 0.1, preferably 5:95 to 50:50. It is good.

It is preferable to use an aromatic solvent, an aliphatic solvent, a ketone solvent, an ether solvent, a silicone solvent, or a mixture thereof as the organic solvent used in the preparation of the siloxane resin of the present invention.

In addition, the kind of acid catalyst used for producing the siloxane resin of the present invention is not particularly limited, but it is preferable to use hydrochloric acid, benzenesulfonic acid, nitric acid, oxalic acid, formic acid, or a mixture thereof.

The acid catalyst is preferably added in an amount of 1 to 1 × 10 ⁻⁶ equivalents to the terminal functional groups of the cage type unit and the cyclic unit or cage type unit and the silane unit.

The amount of water used during the hydrolysis and condensation polymerization reaction in the organic solvent in the presence of the acid catalyst is in the range of 1 to 100, preferably 1 to 10 equivalents to the functional group of the monomer used.

The hydrolysis reaction and condensation polymerization reaction is preferably carried out at a temperature of 0 to 200 ℃, preferably 50 to 110 ℃, for 1 to 100 hours, preferably for 5 to 48 hours.

The siloxane resin of the present invention thus prepared has a molecular weight of 1,000 to 1,000,000, preferably 3,000 to 300,000, and the Si-OH content in the resin is 10 mol% or more.

Hereinafter, a method of forming a semiconductor interlayer insulating film using the siloxane resin of the present invention will be described in detail.

The method for forming a semiconductor interlayer insulating film of the present invention includes dissolving the siloxane-based resin in an organic solvent and coating it on a silicon substrate, and heating the coated substrate to cure the siloxane-based resin.

The kind of organic solvent used to dissolve the siloxane resin in the insulating film forming method of the present invention is not particularly limited, but aromatic hydrocarbons such as anisole and xylene; Ketone solvents such as methyl isobutyl ketone and acetone; Ether solvents such as tetrahydrofuran and isopropyl ether; Silicone solvents; Or mixtures thereof.

The organic solvent should be present in a sufficient amount up to the concentration required to apply the siloxane resin to the substrate, and the organic solvent is dissolved so that the solid content concentration of the siloxane resin is 0.1 to 80% by weight, preferably 5 to 30% by weight. good.

The method for applying the siloxane-based resin solution of the present invention prepared in this way to the substrate is spin coating, deep coating, spray coating, flow coating, screen printing. printing) and the like, but the present invention is not limited thereto, and the most preferable coating method is spin coating. In particular, in the case of performing spin coating, the speed of the spin is preferably adjusted within the range of 1000 to 5000 rpm.

When the application is complete, the organic solvent is evaporated from the coated substrate so that the siloxane resin film is deposited on the substrate. In this case, as the evaporation method, a simple air drying method such as exposing the coated substrate to the surrounding environment, or a method of applying a vacuum at the initial stage of the curing process or weakly heating below 100 ° C. may be used.

After evaporating the organic solvent, the coated substrate is thermally cured at a temperature of 150 to 600 ° C., preferably 200 to 450 ° C. for 1 to 150 minutes to form an insoluble coating without cracks. A crack-free film means a film in which any cracks visible to the naked eye are not observed when observed with an optical microscope at a × 1000 magnification, and an insoluble film is essentially an organic solvent used in the preparation of the siloxane resin solution. Refers to a film that does not dissolve.

The thin film produced according to the method of the present invention described above has a dielectric constant of 3.0 or less, preferably 2.0 to 2.7, and thus is very useful as a semiconductor interlayer insulating film.

Hereinafter, the present invention will be described in more detail with reference to the following examples, but the following examples are for illustrative purposes only and are not intended to limit the present invention.

Preparation Example 1 Synthesis of Cage Type Siloxane Unit

Preparation Example 1-1 Synthesis of Unit (A)

7.194 mmol (10.0 g) of octa (chlorosilylethyl) -POSS [Polyhedral Oligomeric Silsesquioxane] was diluted with 500 ml of tetrahydrofuran and 63.310 mmol (6.41 g) of triethylamine was added. Subsequently, the reaction temperature was lowered to −78 ° C., 63.310 mmol (2.03 g) of methyl alcohol was slowly added, and the reaction temperature was gradually raised to room temperature. After the reaction was performed at room temperature for 20 hours, the mixture was filtered through celite, and volatiles were removed under reduced pressure of about 0.1 Torr. 100 ml of pentane was added thereto, stirred for 1 hour, filtered through celite to give a colorless clear solution, and pentane was further removed from the solution under reduced pressure of about 0.1 Torr. Unit (A) was obtained.

The NMR results of dissolving the unit (A) in CDCl ₃ are as follows.

¹ H - NMR (300 MHz): δ 0.11 (s, 48H, 8 ×-[CH ₃ ] ₂ ), 0.54-0.68 (m, 32H, 8 × -CH ₂ CH _2- ), 3.43 (s, 24H, 8 × -OCH ₃ )

Preparation Example 1-2 Synthesis of Unit (B)

6.438 mmol (10.0 g) of octa (dichlorosilylethyl) -force (octa (dichlorosilylethyl) -POSS) was diluted with 500 ml of tetrahydrofuran and 113.306 mmol (11.47 g) of triethylamine were added. Subsequently, the reaction temperature was lowered to -78 ° C, methyl alcohol 113.306 mmol (3.63 g) was added slowly, and the reaction temperature was gradually raised to room temperature. After the reaction was performed at room temperature for 20 hours, the mixture was filtered through celite, and volatiles were removed under reduced pressure of about 0.1 Torr. 100 ml of pentane was added thereto, stirred for 1 hour, filtered through celite to give a colorless clear solution, and pentane was further removed from the solution under reduced pressure of about 0.1 Torr. Unit (B) was obtained.

The NMR results of dissolving the unit (B) in CDCl ₃ are as follows.

¹ H - NMR (300 MHz): δ 0.12 (s, 24H, 8 × -CH ₃ ), 0.56-0.70 (m, 32H, 8 × -CH ₂ CH _2- ), 3.46 (s, 48H, 8 ×-[ OCH ₃ ] ₂ )

Preparation Example 1-3 Synthesis of Unit (C)

2.913 mmol (5.0 g) of octa (trichlorosilylethyl) -force (octa (trichlorosilylethyl) -POSS) was diluted with 500 ml of tetrahydrofuran and 76.893 mmol (7.78 g) of triethylamine was added. Subsequently, the reaction temperature was lowered to -78 ° C, methyl alcohol 76.893 mmol (2.464 g) was gradually added, and the reaction temperature was gradually raised to room temperature. After the reaction was performed at room temperature for 20 hours, the mixture was filtered through celite, and volatiles were removed under reduced pressure of about 0.1 Torr. 100 ml of pentane was added thereto, stirred for 1 hour, filtered through celite to obtain a colorless clear solution, and pentane was further removed from the solution under reduced pressure of about 0.1 Torr. Unit (C) was obtained.

The NMR results of dissolving the unit (C) in CDCl ₃ are as follows.

¹ H - NMR (300 MHz): δ 0.66-0.69 (m, 32H, 8 × -CH ₂ CH _2- ), 3.58 (s, 72H, 8 ×-[OCH ₃ ] ₃ )

Preparation Example 2 Synthesis of Cyclic Siloxane Unit

Preparation Example 2-1 Synthesis of Monomer (D)

2,4,6,8-tetramethyl-2,4,6,8-tetravinylcyclotetrasiloxane (2,4,6,8-tetramethyl-2,4,6,8-tetravinylcyclotetrasiloxane) 29.014 mmol (10.0 g) ) And platinum (0) -1,3-divinyl-1,1,3,3-tetramethyldisiloxane compound (platinum (0) -1,3-divinyl-1,1,3, 0.164 g of 3-tetramethyldisiloxane complex (solution in xylenes)) was added to the flask, followed by dilution with 300 ml of diethyl ether. Subsequently, after lowering the temperature of the reaction vessel to −78 ° C., 127.66 mmol (17.29 g) of trichlorosilane was slowly added, and the reaction temperature was gradually raised to room temperature. Thereafter, the reaction was allowed to proceed at room temperature for 20 hours, and 0.1 Torr. The volatiles were removed under reduced pressure. 100 ml of pentane was added thereto, stirred for 1 hour, filtered through celite to obtain a solution, and pentane was further removed from the solution under reduced pressure of about 0.1 Torr to obtain a liquid compound having the following structure. It was.

11.28 mmol (10.0 g) of the liquid compound was diluted with 500 ml of tetrahydrofuran and 136.71 mmol (13.83 g) of triethylamine was added. Subsequently, the reaction temperature was lowered to −78 ° C., and 136.71 mmol (4.38 g) of methyl alcohol was slowly added, and then the reaction temperature was gradually raised to room temperature. After the reaction was performed at room temperature for 15 hours, the mixture was filtered through celite and volatiles were removed under reduced pressure of about 0.1 Torr. 100 ml of pentane was added thereto, stirred for 1 hour, filtered through celite to give a colorless clear solution, and pentane was further removed from the solution under reduced pressure of about 0.1 Torr. Unit (D) was obtained.

The NMR results of dissolving the unit (D) in CDCl ₃ are as follows.

¹ H - NMR (300 MHz): δ 0.09 (s, 12H, 4 × -CH ₃ ), 0.52 to 0.64 (m, 16H, 4 × -CH ₂ CH _2- ), 3.58 (s, 36H, 4 ×-[ OCH ₃ ] ₃ )

Preparation Example 2-2 Synthesis of Unit (E)

2,4,6,8-tetramethylcyclotetrasiloxane (2,4,6,8-tetramethylcyclotetrasiloxane) 8.32 mmol (2.0 g) and platinum (0) -1,3-divinyl-1 dissolved in xylene solution, 0.034 g of 1,3,3-tetramethyldisiloxane compound was added to the flask, followed by dilution with 100 ml of toluene, and trimethoxy (7-octen-1-yl). 33.36 mmol (7.75 g) was added slowly, and the reaction temperature was gradually raised to 75 ° C. After the reaction was carried out for 36 hours, volatiles were removed under 0.1 Torr reduced pressure. 100 ml of pentane was added thereto, stirred for 1 hour, filtered through celite to obtain a solution, and pentane was further removed from the solution under 0.1 Torr reduced pressure to obtain a unit (E) having the following structure. Obtained.

The NMR results of measuring the unit (E) in CDCl ₃ are as follows.

¹ H - NMR (300 MHz): δ 0.11 (s, 12H, 4 × -CH ₃ ), 0.48 to 0.53 (m, 8H, 4 × -CH _2- ), 0.86 to 0.90 (m, 8H, 4 × -CH _2- ), 1.15 to 1.71 (m, 48H, 4 ×-[CH ₂ ] ₆ ), 3.58 (s, 36H, 4 ×-[OCH ₃ ] ₃ )

Example 1 siloxane-based resin synthesis

As shown in Table 1 below, each of the cage-type unit and the cyclic unit or the commercially available silane-based unit was quantified, diluted with 45 ml of tetrahydrofuran and added to the flask, and the temperature of the flask was lowered to -78 ° C. After slowly adding hydrochloric acid and water at -78 ° C, the temperature was gradually raised to 70 ° C. Thereafter, the reaction was performed at 70 ° C. for 16 hours. After the reaction solution was transferred to a separatory funnel, 90 ml of diethyl ether was added, washed three times with 50 ml of water, and volatiles were removed under reduced pressure to obtain a white powdery polymer. The polymer was dissolved in a small amount of acetone and the solution was filtered through a syringe filter with a pore of 0.2 μm to remove fine powder and other debris, and only the clear solution portion was taken, followed by the slow addition of water. At this time, the resulting white powder and the solution portion (acetone and water mixed solution) were separated, and the white powder was dried under reduced pressure at 0.1 Torr at a temperature of 0 to 5 ℃ to obtain a fractionated siloxane resin. The amount of monomers, acid catalyst, water and siloxane resins used in the synthesis of each polymer are shown in Table 1 below.

Suzy Unit (g) HCl (mmol) H ₂ O (mmol) Yield (g) Cage type Annular Silane system (a) Monomer (A) 2.00 g Unit (D) 11.08g 1.713 570.96 6.15 (b) Monomer (A) 2.00 g CH ₃ Si (OCH ₃ ) ₃ 1.81 g 0.00517 172.36 2.03 (c) Unit (B) 2.00 g Unit (D) 10.12 g 1.673 557.56 6.04 (d) Unit (B) 2.00 g Monomer (E) 14.20 g 1.673 557.56 5.17 (e) Unit (B) 2.00 g CH ₃ Si (OCH ₃ ) ₃ 1.65 g 0.00580 193.36 1.95 (f) Monomer (C) 2.00 g Monomer (D) 9.32 g 1.640 546.70 4.11

The molecular weight, Si-OH content, Si-OCH ₃ content, Si-CH ₃ content, and weight loss measurements of the siloxane resins obtained from the above are shown in Table 2 below.

Suzy MW MWD Si-OH (%) Si-OCH ₃ (%) Si-CH ₃ (%) Weight loss (%) (a) 63418 6.13 26.3 0.7 73.0 4.5 (b) 6878 6.15 12.9 0.9 86.2 4.2 (c) 66614 8.59 37.6 0.6 61.8 4.1 (d) 89860 8.34 39.7 0.8 59.5 3.8 (e) 6904 5.70 30.6 1.4 68.0 4.6 (f) 67145 7.86 28.6 1.7 69.7 3.7

[Measurement Method]

※ Molecular weight: analyzed by gel permeation chromatography (gel permeation chromatogrphy, Waters).

※ Si-OH content, Si-OCH ₃ content, Si-CH ₃ content: It was analyzed by nuclear magnetic resonance analyzer (NMR, Bruker).

Si-OH (%) = Area (Si-OH) / [Area (Si-OH) + Area (Si-OCH ₃ ) + Area (Si-CH ₃ )] × 100

Si-OCH ₃ (%) = Area (Si-OCH ₃ ) / [Area (Si-OH) + Area (Si-OCH ₃ ) + Area (Si-CH ₃ )] × 100

Si-CH ₃ (%) = Area (Si-CH ₃ ) / [Area (Si-OH) + Area (Si-OCH ₃ ) + Area (Si-CH ₃ )] × 100

※ Weight loss: The weight loss (%) was measured in the temperature range of 200 degreeC-500 degreeC with the thermogravimetry analyzer (TGA, TA instruments).

Example 2 thin film thickness and dielectric constant measurement

The siloxane resin obtained in Example 1 was dissolved in methyl isobutyl ketone, and the solution was spin-coated at 3000 rpm on a P-type silicon wafer doped with boron. The coated substrate was subjected to soft baking sequentially at 150 ° C. for 1 minute at 250 ° C. for 1 minute to sufficiently remove the organic solvent. Subsequently, the test specimens were prepared by curing for 60 minutes in a Linberg furnace at 400 ° C. under a vacuum atmosphere. For each of the completed test specimens, the thickness of the thin film formed on the substrate was measured using a prism coupler, ellipsometer, and profiler, and the prism coupler and ellipsometer were used. The refractive index was measured and the results are summarized in Table 3 below.

Suzy Prism coupler Ellipsometer Profiler permittivity Thickness Refractive index Thickness Refractive index Thickness (a) 8168 1.433 - - 7751 2.26 (b) 7335 1.420 7367 1.422 6584 2.30 (c) 8676 1.426 8700 1.426 8246 2.34 (d) 8050 1.435 - - 7961 2.31 (e) 7535 1.424 7644 1.423 7055 2.34 (f) 8565 1.427 - - 8412 2.42

Meanwhile, the dielectric constant of the siloxane resin thin film was measured using a Hg CV meter (SSM 490i CV system, Solid State Measurements) within a range of -220V to 220V gate voltage at a frequency of about 1 MHz. .

In order to measure the dielectric constant, the capacitance of the specimen coated with a reference material (for example, thermally oxidized silicon oxide) having a known thin film thickness and dielectric constant is measured, and the Hg electrode and the Obtain the area of contact with the specimen as the reference value.

A = C × t / k

[Remarks]

A = area of contact between Hg and the specimen

C = measured capacitance

t = film thickness

k = dielectric constant of the reference material (3.9 for thermal silicon oxide)

Since the film thickness (hereinafter referred to as "converted thickness") based on the capacitance of the test specimen and the reference value is measured during CV measurement, the converted thickness and the film thickness of the test specimen measured above are substituted into Equation 2 below. The dielectric constant of the test specimen was calculated.

k _{test specimen} = 3.9 × t _{test specimen} / t _thickness

The permittivity measured as described above is shown in Table 3 above.

As described in detail above, by using the siloxane resin of the present invention, it is possible to easily form an insulating film of low dielectric constant in manufacturing a high integration semiconductor.

Claims (13)

The cage-type siloxane compound having the structure of Formula 1a, 1b or 1c and the cyclic siloxane compound having the structure of Formula 2 or the silane compound having the structure of Formula 3 are hydrolyzed and condensation-polymerized in an organic solvent in the presence of an acid catalyst. Prepared siloxane resin. [Formula 1a] [Formula 1b] [Formula 1c] [Formula 2] [Formula 3] RSiX ₁ X ₂ X ₃ In the above formula, R is a hydrogen atom, a C ₁ -C ₃ alkyl group, a C ₃ -C ₁₀ cyclic alkyl group, or a C ₆ -C ₁₅ aryl group; X ₁ , X ₂ and X ₃ are each independently a C ₁ to C ₃ alkyl group, a C ₁ to C ₁₀ alkoxy group or a halogen atom; p is an integer from 3 to 8; m is an integer from 1 to 10; n is an integer from 1 to 12. The siloxane-based resin according to claim 1, wherein the molar ratio between the cage siloxane compound and the cyclic siloxane compound or the silane compound is 0.1: 99.9 to 99.9: 0.1. The siloxane-based resin according to claim 1, wherein the organic solvent is an aromatic solvent, an aliphatic solvent, a ketone solvent, an ether solvent, a silicone solvent, or a mixture thereof. The siloxane-based resin according to claim 1, wherein the acid catalyst is hydrochloric acid, benzenesulfonic acid, nitric acid, oxalic acid, formic acid, or a mixture thereof. The siloxane-based resin according to claim 1, wherein the acid catalyst is added in an amount of 1 to 1 × 10 ⁻⁶ equivalents to the terminal functional groups of the cage-type siloxane compound and the cyclic siloxane compound, or the cage-type siloxane compound and the silane compound. . The method of claim 1, wherein the hydrolysis reaction and the condensation polymerization reaction are performed after adding 1 to 100 equivalents of water to the terminal functional groups of the cage-type siloxane compound and the cyclic siloxane compound, or the cage-type siloxane compound and the silane compound. Siloxane resin, characterized in that carried out for 1 to 100 hours at a temperature of 200 ℃. The siloxane-based resin according to claim 1, wherein the Si-OH content of the siloxane-based resin is 10 mol% or more. The siloxane-based resin of claim 1, wherein the siloxane-based resin has a molecular weight of 1,000 to 1,000,000. A method for forming a semiconductor interlayer insulating film comprising the step of dissolving the siloxane-based resin according to claim 1 in an organic solvent and coating it on a silicon substrate. The method of claim 9, wherein the organic solvent is an aromatic hydrocarbon solvent, a ketone solvent, an ether solvent, a silicon solvent, or a mixture thereof. 10. The method for forming a semiconductor interlayer insulating film according to claim 9, wherein the siloxane resin is dissolved in the organic solvent so that a solid content concentration is 0.1 to 80 wt%. The method of claim 9, wherein the coating is performed by spin coating at a spin speed of 1000 to 5000 rpm. The method of claim 9, wherein the thermosetting is performed at a temperature of 150 to 600 ° C. for 1 to 150 minutes.