KR20020058265A - A method for forming a semiconductor device - Google Patents
A method for forming a semiconductor device Download PDFInfo
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- KR20020058265A KR20020058265A KR1020000086312A KR20000086312A KR20020058265A KR 20020058265 A KR20020058265 A KR 20020058265A KR 1020000086312 A KR1020000086312 A KR 1020000086312A KR 20000086312 A KR20000086312 A KR 20000086312A KR 20020058265 A KR20020058265 A KR 20020058265A
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- forming
- interlayer insulating
- photodiode
- layer
- insulating film
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims abstract description 18
- 239000010410 layer Substances 0.000 claims abstract description 39
- 239000011229 interlayer Substances 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 238000002955 isolation Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 230000010354 integration Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000003989 dielectric material Substances 0.000 abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 4
- 238000002161 passivation Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
Abstract
Description
본 발명은 반도체소자의 형성방법에 관한 것으로, 특히 이미지 센서 ( imagesensor ) 내 각각의 픽셀 ( pixel ) 주위로 금속 거울을 설치하여 포토다이오드 ( photodiode )를 벗어나는 빛을 금속 거울 표면에서 반사시켜서 빛을 감지하는 포토 다이오드 쪽으로 입사되는 빛의 양을 증가시키는 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a semiconductor device. In particular, a metal mirror is installed around each pixel in an image sensor to reflect light from a photodiode onto the surface of the metal mirror to sense light. It relates to a method of increasing the amount of light incident toward the photodiode.
CMOS 이미지 센서 소자의 감도 ( sensitivity ) 는 빛을 감지하는 포토 다이오드 쪽으로 입사되는 빛의 양에 크게 의존한다.The sensitivity of a CMOS image sensor element is highly dependent on the amount of light incident on the photodiode that senses light.
현재 이미지 센서의 감도는 반구 모형으로 제조된 마이크로 렌즈 ( microlens )에서 포토다이오드 까지의 거리에 따라 결정된다.The sensitivity of the current image sensor is determined by the distance from the microlens manufactured by the hemisphere model to the photodiode.
이미지 센서의 집적도를 높이기 위하여 이미지 센서 내의 대부분을 차지하는 픽셀 크기를 줄이는 것이 가장 효율적이다.It is most efficient to reduce the pixel size that occupies most of the image sensor in order to increase the density of the image sensor.
하지만, 픽셀 크기를 줄일 경우 마이크로 렌즈의 반경 감소에 따른 촛좀거리 ( focus length ) 가 짧아져 포토 다이오드 쪽으로 입사되는 빛의 양이 감소한다.However, if the pixel size is reduced, the focal length due to the decrease of the radius of the microlens is shortened, thereby reducing the amount of light incident to the photodiode.
또한, 반도체소자의 제조 공정이 발달함에 따라 층간 금속 배선층의 수가 증가하게 되어 부수적으로 층간절연막의 층수가 증가하게 된다.In addition, as the manufacturing process of the semiconductor device develops, the number of interlayer metal wiring layers increases, and consequently, the number of interlayer insulating films increases.
이 경우 마이크로 렌즈에서 포토다이오드까지의 거리가 증가되어 초점거리가 긴 마이크로렌즈의 제작, 즉 마이크로렌즈의 반경 증가를 필요로 하게 된다.In this case, the distance from the microlens to the photodiode is increased, which requires the manufacture of a long focal length microlens, i.e. an increase in the radius of the microlens.
참고로, 동일한 곡률을 가진 구형 마이크로 렌즈의 경우 초점거리는 마이크로렌즈의 반경에 비례한다.For reference, in the case of spherical microlenses having the same curvature, the focal length is proportional to the radius of the microlens.
도 1 은 종래기술에 따른 반도체소자의 형성방법을 도시한 단면도로서, CMOS 이미지 센서 형성공정후 보호막을 형성한 것을 도시한다.1 is a cross-sectional view illustrating a method of forming a semiconductor device according to the prior art, in which a protective film is formed after a CMOS image sensor forming process.
먼저, 반도체기판(11) 상에 활성영역을 정의하는 소자분리막(13)을 비활성영역에 형성한다.First, an isolation layer 13 defining an active region is formed on an inactive region on the semiconductor substrate 11.
그리고, 상기 활성영역의 예정된 영역에 트랜지스터(17) 및 포토다이오드(15)를 각각 형성한다.Then, the transistor 17 and the photodiode 15 are formed in the predetermined region of the active region, respectively.
그 다음, 전체표면상부를 평탄화시키는 제1층간절연막(19)을 형성하고 상기 트랜지스터(17)에 접속되는 제1금속배선(21)을 상기 제1층간절연막(19) 상부에 형성한다.Next, a first interlayer insulating film 19 is formed to planarize the entire upper surface, and a first metal wiring 21 connected to the transistor 17 is formed over the first interlayer insulating film 19.
그리고, 그 상부를 평탄화시키는 제2층간절연막(23)을 형성하고 그 상부에 제3층간절연막(25)을 형성한 다음, 그 상부에 보호막(27)을 형성한다.A second interlayer insulating film 23 is formed to planarize an upper portion thereof, a third interlayer insulating layer 25 is formed thereon, and a protective film 27 is formed thereon.
후속공정으로 상기 포토다이오드(15) 상측에 컬러필터와 마이크로 렌즈를 형성한다.In a subsequent process, a color filter and a micro lens are formed on the photodiode 15.
여기서, 상기 제2층간절연막(23) 및 제3층간절연막(25)은 각각 제2금속배선(도시안됨)과 제3금속배선(도시안됨)을 형성한 후 그 상부를 평탄화시켜 형성한 것이다.Here, the second interlayer insulating film 23 and the third interlayer insulating film 25 are formed by forming a second metal wiring (not shown) and a third metal wiring (not shown), respectively, and then flattening an upper portion thereof.
상기한 바와같이 종래기술에 따른 반도체소자의 형성방법은, 이미지 센서에 사용되는 마스크로 렌즈의 직경을 크게 형성하여 반도체소자의 고집적화를 어렵게 하는 동시에 생산단가를 증가시키는 문제점이 있다.As described above, the method of forming a semiconductor device according to the related art has a problem of increasing the production cost and making it difficult to integrate the semiconductor device by increasing the diameter of the lens with a mask used for an image sensor.
본 발명은 상기한 종래의 문제점을 해결하기 위한 것으로, 이미지 센서의 집적도를 향상시키기 위하여 포토다이오드를 벗어나는 입사광을 효율적으로 포토다이오드 쪽으로 전달 할 수 있는 픽셀 구조를 형성하여 반도체소자의 특성, 신뢰성 및생산성을 향상시키고 그에 따른 반도체소자의 고집적화를 가능하게 하는 반도체소자의 형성방법을 제공함에 그 목적이 있다.SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and in order to improve the degree of integration of an image sensor, a pixel structure capable of efficiently transferring incident light leaving the photodiode toward the photodiode may be formed to provide characteristics, reliability, and productivity of the semiconductor device. It is an object of the present invention to provide a method for forming a semiconductor device that improves the performance and thereby enables high integration of the semiconductor device.
도 1 은 종래기술에 따른 반도체소자의 형성방법을 도시한 단면도.1 is a cross-sectional view showing a method of forming a semiconductor device according to the prior art.
도 2a 내지 도 2d 는 본 발명의 실시예에 따른 반도체소자의 형성방법을 도시한 단면도.2A to 2D are cross-sectional views illustrating a method of forming a semiconductor device in accordance with an embodiment of the present invention.
< 도면의 주요 부분에 대한 부호의 설명 ><Description of Symbols for Main Parts of Drawings>
11,31 : 반도체기판13,33 : 소자분리막11,31 semiconductor substrate 13,33 device isolation film
15,35 : 포토다이오드17,37 : 트랜지스터15,35 photodiode 17,37 transistor
19,39 : 제1층간절연막21,41 : 제1금속배선19,39: first interlayer insulating film 21,41: first metal wiring
23,43 : 제2층간절연막25,45 : 제3층간절연막23,43: Second interlayer insulating film 25,45: Third interlayer insulating film
27,47 : 보호막49 : 감광막패턴27,47: protective film 49: photoresist pattern
51 : 콘택홀53 : 금속층51: contact hole 53: metal layer
54 : 캐핑층55 : 컬러필터54 Capping Layer 55 Color Filter
57 : 제4층간절연막59 : 마이크로 렌즈57: fourth interlayer insulating film 59: microlens
상기 목적을 달성하기 위한 본 발명의 반도체소자의 형성방법은,The method of forming a semiconductor device of the present invention for achieving the above object,
반도체기판 상에 활성영역을 정의하는 소자분리막을 형성하는 공정과,Forming a device isolation film defining an active region on the semiconductor substrate;
상기 활성영역에 포토 다이오드를 형성하는 공정과,Forming a photodiode in the active region;
상기 다수의 층간절연막을 형성하되, 상기 각각의 층간절연막은 반도체기판 상의 구조물에 접속되는 다수의 금속배선이 구비되는 공정과,Forming a plurality of interlayer insulating films, each interlayer insulating film having a plurality of metal wires connected to a structure on a semiconductor substrate;
상기 다수의 층간절연막을 식각하여 상기 소자분리막을 노출시키는 콘택홀을 형성하는 공정과,Forming a contact hole exposing the device isolation layer by etching the plurality of interlayer insulating layers;
상기 콘택홀을 매립하는 금속층을 형성하는 공정과,Forming a metal layer filling the contact hole;
전체표면상부에 캐핑층을 형성하는 공정과,Forming a capping layer over the entire surface;
상기 포토다이오드 상측의 상기 캐핑층 상부에 컬러필터를 형성하는 공정과,Forming a color filter on the capping layer above the photodiode;
전체표면상부에 다른 층간절연막을 형성하고 상기 컬러필터 상측의 다른 층간절연막 상부에 마이크로 렌즈를 형성하는 공정을 포함하는 것과,Forming another interlayer insulating film on the entire surface and forming a microlens on the other interlayer insulating film above the color filter;
상기 금속층은 알루미늄이나 텅스텐으로 형성하는 것과,The metal layer is formed of aluminum or tungsten,
상기 캐핑층은 실리콘질화막이나 실리콘산화질화막으로 형성하는 것을 특징으로 한다.The capping layer is formed of a silicon nitride film or a silicon oxynitride film.
본 발명의 원리는, 이미지 센서 소자의 특성을 향상시키기 위하여 마이크로 렌즈의 반경을 줄일 경우 짧아진 초점거리로 인하여 포토다이오드를 벗어나는 빛을금속 표면에서 반사시켜 다이오드 쪽으로 입사되는 빛의 양을 증가시키는 방법이다.The principle of the present invention is to increase the amount of light incident on a diode by reflecting light off the photodiode from the metal surface due to the shorter focal length when the radius of the microlens is reduced to improve the characteristics of the image sensor element. to be.
즉, 본 발명에서는 이미지 센서 내 픽셀 주위로 빛의 반사 성질이 뛰어난 금속 거울을 설치하여 포토다이오드를 벗어나는 빛을 효율적으로 포토다이오드 쪽으로 유도하는 것이다.That is, in the present invention, a metal mirror having excellent light reflecting properties is installed around the pixels in the image sensor to efficiently guide the light from the photodiode toward the photodiode.
도 2a 내지 도 2d는 본 발명의 실시예에 따른 반도체소자의 형성방법을 도시한 단면도로서, CMOS 이미지 센서를 도시한 것이다.2A to 2D are cross-sectional views illustrating a method of forming a semiconductor device in accordance with an embodiment of the present invention and illustrate a CMOS image sensor.
도 2a를 참조하면, 반도체기판(31) 상에 활성영역을 정의하는 소자분리막(33)을 비활성영역에 형성한다.Referring to FIG. 2A, an isolation layer 33 defining an active region is formed on the semiconductor substrate 31 in an inactive region.
그리고, 상기 활성영역의 예정된 영역에 트랜지스터(37) 및 포토다이오드(35)를 각각 형성한다.The transistor 37 and the photodiode 35 are formed in predetermined regions of the active region, respectively.
그 다음, 전체표면상부를 평탄화시키는 제1층간절연막(39)을 형성하고 상기 트랜지스터(37)에 접속되는 제1금속배선(41)을 상기 제1층간절연막(39) 상부에 형성한다.Next, a first interlayer insulating film 39 is formed to planarize the entire upper surface, and a first metal wiring 41 connected to the transistor 37 is formed over the first interlayer insulating film 39.
그리고, 그 상부를 평탄화시키는 제2층간절연막(43)을 형성하고 그 상부에 제3층간절연막(45)을 형성한 다음, 그 상부에 보호막(27)을 형성한다.A second interlayer insulating film 43 is formed to planarize an upper portion thereof, a third interlayer insulating film 45 is formed thereon, and a protective film 27 is formed thereon.
그 다음, 상기 보호막(27) 상부에 감광막패턴(49)을 형성한다.Next, a photoresist pattern 49 is formed on the passivation layer 27.
이때, 상기 감광막패턴(49)은 상기 소자분리막(33)을 노출시키는 식각마스크를 이용한 노광 및 현상공정으로 형성한 것이다.In this case, the photoresist pattern 49 is formed by an exposure and development process using an etching mask exposing the device isolation layer 33.
그 다음, 상기 감광막패턴(49)을 마스크로 하여 상기 보호막(47), 제3층간절연막(45), 제2층간절연막(43) 및 제1층간절연막(39)을 순차적으로 식각함으로써 상기 소자분리막(33)을 노출시키는 콘택홀(51)을 형성한다.Subsequently, the passivation layer 47, the third interlayer insulating layer 45, the second interlayer insulating layer 43, and the first interlayer insulating layer 39 are sequentially etched using the photoresist pattern 49 as a mask. A contact hole 51 exposing 33 is formed.
도 2b를 참조하면, 상기 감광막패턴(49)을 제거하고 상기 콘택홀(51)을 매립하는 금속층(53)을 전체표면상부에 형성한다.Referring to FIG. 2B, the photoresist layer pattern 49 is removed and a metal layer 53 filling the contact hole 51 is formed on the entire surface.
이때, 상기 금속층(53)은 알루미늄이나 텅스텐으로 형성하며, 상기 금속층(53)은 소자의 동작시 금속 거울의 역할을 하게 되어 상기 포토다이오드를 벗어나는 빛을 표면에서 반사시켜 빛을 감지하는 포토다이오드 쪽으로 입사되는 빛의 양을 증가시키는 역할을 한다.In this case, the metal layer 53 is formed of aluminum or tungsten, and the metal layer 53 serves as a metal mirror during operation of the device, and reflects light from the photodiode onto the photodiode to sense light. It increases the amount of incident light.
도 2c를 참조하면, 상기 금속층(53)을 에치백하여 상기 콘택홀(51) 만을 매립하는 금속층(53)을 형성한다.Referring to FIG. 2C, the metal layer 53 is etched back to form a metal layer 53 filling only the contact hole 51.
도 2d를 참조하면, 전체표면상부에 캐핑층(capping layer)(54)을 형성한다. 이때, 상기 캐핑층(54)은 PECVD 방법으로 실리콘질화막이나 실리콘산화질화막을 형성한다.Referring to FIG. 2D, a capping layer 54 is formed over the entire surface. In this case, the capping layer 54 forms a silicon nitride film or a silicon oxynitride film by PECVD.
그 다음, 상기 포토다이오드(35) 상측의 캐핑층(54) 상부에 컬러필터(55), 즉 컬러필터어레이 ( color filter array, CPA ) 를 형성한다.Next, a color filter 55, that is, a color filter array (CPA), is formed on the capping layer 54 above the photodiode 35.
그리고, 상기 컬러필터(55) 상부를 평탄화시키는 제4층간절연막(57)을 형성한다.A fourth interlayer insulating film 57 is formed to planarize the color filter 55.
그리고, 상기 컬러필터(55) 상측에 마이크로렌즈(59)를 형성한다.Then, the microlens 59 is formed on the color filter 55.
이상에서 상술한 바와 같이, 본 발명의 방법에 따른 반도체소자의 형성방법은, CMOS 이미지 센서에서 각각의 픽셀 주위로 금속 거울을 형성하여 마이크로렌즈의 반경을 줄이고 그에 따른 반도체소자의 집적도를 향상시킬 수 있으며, 마이크로렌즈와 포토다이오드 간의 거리 증가에 관계없이 소자의 동작 특성을 유지할 수 있어 반도체소자의 특성 및 신뢰성을 향상시킬 수 있는 효과를 제공한다.As described above, the method of forming a semiconductor device according to the method of the present invention can form a metal mirror around each pixel in a CMOS image sensor to reduce the radius of the microlens and thereby improve the integration degree of the semiconductor device. In addition, regardless of an increase in the distance between the microlens and the photodiode, the operation characteristics of the device can be maintained, thereby providing an effect of improving the characteristics and reliability of the semiconductor device.
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| KR100784387B1 (en) * | 2006-11-06 | 2007-12-11 | 삼성전자주식회사 | Image sensor and method for forming the same |
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