KR20020041954A - Field emission display device and method for manufacturing the same - Google Patents

Abstract

PURPOSE: A field emission display device and a method for fabricating the same are provided to improve contrast by preventing a spreading phenomenon of displayed colors due to collided electrons. CONSTITUTION: A cathode plate(10) is used for emitting electrons. An anode plate(30) is used for emitting light by collision of the emitted electrons. The cathode plate(10) is formed with a cathode electrode layer(21), a multitude of gate electrode(23), and a micro tip(24). The cathode electrode layer(21) is formed on a lower substrate(11). The gate electrodes(23) are formed by inserting a gate insulating layer(22) in the cathode electrode layer(21). The micro tip(24) is formed on the cathode electrode layer(21) between the gate electrodes(23). The anode plate(30) is formed with a multitude of black matrix pattern(51), an insulating layer(52) formed the upper substrate(40), a transparent electrode layer(53), and a multitude of fluorescent layer(61).

Description

Field emission display device and method for manufacturing the same

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a field emission display device and a method for manufacturing the same. In particular, a black matrix pattern is formed between each phosphor to prevent unnecessary consumption of emitted electrons and to provide contrast of the field emission display device. And a field emission display for improving the quality and a manufacturing method thereof.

Recently, display devices have been developed into high-definition and high-resolution flat panel display devices.

The flat panel display device has various applications such as a digital mirror device (DMD), an LCD (Liquid Crystal Display (LCD)), a plasma display pannal (PDP), and the like. Element, and a display device using the same is a field emission display device.

The field emission display device forms an electric field of about 5 × 10 ⁷ V / cm, and uses the field emission of electrons emitted accordingly, and the emitted electrons are accelerated to collide with phosphors to emit light to obtain a desired image. .

The field emission display device includes a cathode plate composed of a cathode and a microtip formed between the gate, and emits electrons, and an anode configured to emit light by collision of the emitted electrons. It consists of a plate.

And a spacer for maintaining a gap between the cathode plate and the anode plate in a high vacuum state to accelerate the emitted electrons, and a power supply unit for applying power to the cathode plate and the anode plate.

The field emission display device emits an electron and collides with a phosphor to emit a phosphor to generate an image, and the emitted electron must accurately collide with a corresponding phosphor.

To this end, a method of connecting electrons to the phosphor is used, and a black matrix is used to prevent spreading.

In addition, by controlling the power applied to the phosphor, the emitted electrons may collide precisely with the set phosphor.

A conventional field emission display device is composed of a cathode plate 10 for emitting electrons and an anode plate 30 for emitting light by collision of the emitted electrons, as shown in FIG.

The cathode plate 10 includes a cathode electrode layer 21 formed on the lower substrate 11, a plurality of gate electrodes 23 formed on the cathode electrode layer 21 with a gate insulating layer 22 interposed therebetween, It consists of a microtip 24 formed on the cathode electrode layer 21 between the gate electrodes 23.

The anode plate 30 is composed of a transparent electrode layer 53 formed on the upper substrate 40 and a plurality of phosphors 61 formed separately from each other on the transparent electrode layer 53.

However, the conventional field emission display device and a method of manufacturing the same have a problem in that the quality of an image is degraded due to color spreading in manufacturing an anode plate.

The present invention has been made to solve the above problems to increase the contrast by preventing the spread of the display color due to the electrons collide with each of the phosphors, and to increase the quality of the display by focusing the electrons to each phosphor due to the introduction of a simple process. It is an object of the present invention to provide a field emission display device and a manufacturing method thereof.

1 is a cross-sectional view showing a conventional field emission display device.

2 is a cross-sectional view illustrating a field emission display device according to a first exemplary embodiment of the present invention.

3A to 3C are cross-sectional views illustrating a method of manufacturing a field emission display device according to a first embodiment of the present invention.

4 is a plan view illustrating a black matrix layer and phosphors of a field emission display device according to a second exemplary embodiment of the present invention.

<Description of Symbols for Major Parts of Drawings>

10: cathode plate 11: lower substrate

21 cathode electrode layer 22 gate insulating film

23: gate electrode 24: micro tip

30: anode plate 40: upper substrate

51: black matrix pattern 52: the insulating film

53 transparent electrode layer 61 phosphor

71: black matrix layer

The field emission display device according to the present invention is an anode plate formed on an upper side of a cathode plate, the upper substrate having a region formed with a black matrix defined between phosphors, and the upper substrate formed with a region formed with the black matrix defined above. And a plurality of phosphors formed on a transparent electrode layer between the plurality of black matrix patterns to be improved, an insulating film formed on the entire surface of the structure, a transparent electrode layer formed on the insulating film, and the black matrix pattern.

In the manufacturing method of the field emission display device of the present invention, in the anode plate formed on the cathode plate, preparing an upper substrate having a formation region of the black matrix between the phosphor, forming a metal layer on the upper substrate Heat treating the metal layer to reduce the reflectivity of the metal layer to improve contrast; selectively etching the metal layer to form a plurality of black matrix patterns on the upper substrate of the defined black matrix formation region; Forming an insulating film on the entire surface of the structure, forming a transparent electrode layer on the insulating film, and forming a plurality of phosphors on the transparent electrode layer between the black matrix patterns.

A preferred embodiment of the field emission display device and a method of manufacturing the same according to the present invention as described above will be described in detail with reference to the accompanying drawings.

2 is a cross-sectional view illustrating a field emission display device according to a first embodiment of the present invention, and FIGS. 3A to 3C are cross-sectional views illustrating a method of manufacturing a field emission display device according to a first embodiment of the present invention.

As shown in FIG. 2, the field emission display device according to the first exemplary embodiment of the present invention includes a cathode plate 10 for emitting electrons and an anode plate 30 for emitting light by collision of the emitted electrons.

The cathode plate 10 includes a cathode electrode layer 21 formed on the lower substrate 11, a plurality of gate electrodes 23 formed on the cathode electrode layer 21 with a gate insulating layer 22 interposed therebetween, It consists of a microtip 24 formed on the cathode electrode layer 21 between the gate electrodes 23.

In addition, the anode plate 30 is formed on the upper substrate 40 including the plurality of black matrix patterns 51 and the black matrix patterns 51 which are separated from each other by a metal layer on the upper substrate 40. And a plurality of phosphors 61 formed on the transparent electrode layer 53 between the insulating layer 52, the transparent electrode layer 53 formed on the insulating layer 52, and the black matrix pattern 51.

Here, the cathode plate is applied to the transparent matrix layer 53 by applying a voltage of 0 to 9000V, which is a voltage smaller than the voltage applied to the transparent electrode layer 53, to the black matrix pattern 51. The electrons emitted from (10) are connected.

In addition, the cathode plate 10 and the anode plate 30 should be maintained at a distance of 200 μm to 2 mm because the distance of electron acceleration and the like should be taken into consideration.

As described above, the black matrix pattern 51 is formed between each of the phosphors 61 represented by unit pixels, thereby preventing the electrons from colliding with other unit pixels adjacent to the unit pixels, and Each of the phosphors 61 in the unit pixel is also caused to collide accurately.

In the method of manufacturing the field emission display device according to the first exemplary embodiment of the present invention, a method of manufacturing an anode plate may include a chromium (Cr) layer, a molybdium (Mo) layer, A metal layer such as a titanium (Ti) layer, a tantalum (Ta) layer, and a tungsten (W) layer is formed to a thickness of 100 to 1000 Å, and then patterned by a photo process to form a plurality of black matrix patterns 51. ).

In addition, the insulating layer 52 having a thickness of 500 to 10,000 Å is formed on the upper substrate 40 including the black matrix patterns 51.

In this case, the thickness of the metal layer may be thinned so as to reduce the reflectivity due to the denaturation of the metal layer when the gas atmosphere heat treatment process is performed, thereby serving as a black matrix.

The gas atmosphere heat treatment process is a process of heat treating the metal layer at 200 to 500 ° C. in a gas atmosphere such as oxygen (O ₂ ), nitrogen (N ₂ ), or argon (Ar) to make the color of the metal layer black.

As shown in FIG. 3B, a transparent electrode layer 53 is formed on the insulating film 52.

As shown in FIG. 3C, a plurality of phosphors 61 are formed on the transparent electrode layer 53 between the black matrix patterns 51.

Here, the phosphors 61 are formed by a photolithography process or a printing process.

Each black matrix pattern 51 is formed in a matrix structure that maintains a distance of 5 to 30 µm from the phosphors.

4 is a plan view illustrating the black matrix layer and the phosphors of the field emission display device according to the second embodiment of the present invention.

In the field emission display device according to the second embodiment of the present invention, as shown in FIG. 4, the black matrix layer 71 is formed instead of the black matrix pattern 51 of the field emission display device according to the first embodiment of the present invention. In addition, the insulating film 52 is not formed.

That is, the anode plate manufacturing method of the field emission display device according to the second embodiment of the present invention is a chromium (Cr) layer, molybdium (Mo) layer, titanium (Ti) on the upper substrate 40 A metal layer such as a layer, a tantalum (Ta) layer and a tungsten (W) layer is formed.

Then, the metal layer is heat treated to form a black matrix layer 71.

Here, the metal layer undergoes a heat treatment process in a gas atmosphere, whereby the reflectivity, which is an intrinsic property of the metal thin film, is remarkably lowered, thereby serving as a black matrix.

Subsequently, a transparent electrode layer 53 is formed on the black matrix layer 71.

Here, the stacking order of the black matrix layer 71 and the transparent electrode layer 53 may be changed.

In addition, a plurality of phosphors 61 are formed on the transparent electrode layer 53.

As described above, since the insulating film 52 is not formed in the anode plate 30 and thus a voltage cannot be applied to the black matrix layer 71, a focusing effect cannot be increased, but due to the black matrix layer 71. The contrast can be increased.

Since the black matrix pattern is formed between each of the phosphors of the unit pixel, the field emission display device and the manufacturing method thereof according to the present invention not only prevent the collision of electrons between adjacent unit pixels, but also accurately correct each of the phosphors in the unit pixel. By collision, it is possible to prevent unnecessary consumption of emitted electrons and to improve contrast and quality of the field emission display device.

Claims (15)

In the anode plate formed on the cathode plate, An upper substrate on which a formation region of a black matrix is defined between phosphors; A plurality of black matrix patterns formed on an upper substrate of the defined black matrix formation region and improving contrast; An insulating film formed on the entire surface of the structure; A transparent electrode layer formed on the insulating film; And a plurality of phosphors formed on the transparent electrode layer between the black matrix patterns. The method of claim 1, And the cathode plate and the anode plate are maintained at intervals of 200 μm to 2 mm in a high vacuum of 1 × 10 ⁻⁶ Torr. In the anode plate formed on the cathode plate, Preparing an upper substrate on which a formation region of a black matrix is defined between phosphors; Forming a metal layer on the upper substrate; Heat treating the metal layer to reduce the reflectivity of the metal layer to improve contrast; Selectively etching the metal layer to form a plurality of black matrix patterns on an upper substrate of the defined black matrix formation region; Forming an insulating film on the entire surface of the structure; Forming a transparent electrode layer on the insulating film; And forming a plurality of phosphors on the transparent electrode layer between the black matrix patterns. The method of claim 3, wherein And maintaining the cathode plate and the anode plate at intervals of 200 μm to 2 mm in a high vacuum of 1 × 10 ⁻⁶ Torr. The method of claim 3, wherein And forming the black matrix pattern in a matrix structure having a distance of 5 to 30 μm from the phosphor. The method of claim 3, wherein 300 to 10,000 V is applied to the transparent electrode layer, and a voltage of 0 to 9000 V, which is a voltage smaller than the voltage applied to the transparent electrode layer, is applied to the black matrix pattern. The method of claim 3, wherein A method for manufacturing a field emission display device, characterized in that the insulating film (52) is formed to a thickness of 500 to 10,000 Å. The method of claim 3, wherein Field emission display characterized in that the metal layer is formed of one of the chromium (Cr) layer, molybdium (Mo) layer, titanium (Ti) layer, tantalum (Ta) layer and tungsten (W) layer having a thickness of 100 ~ 1000Å. Method of manufacturing the device. The method of claim 3, wherein The heat treatment process of the metal layer is characterized in that the heat treatment of the metal layer at 200 ~ 500 ℃ in a gas atmosphere such as oxygen (O ₂ ), nitrogen (N ₂ ), argon (Ar) to make the color of the metal layer black. Method for manufacturing a field emission display device. In the anode plate formed on the cathode plate, Upper substrate; A black matrix layer formed on the upper substrate to improve contrast; A transparent electrode layer formed on the black matrix layer; And a plurality of phosphors formed on the transparent electrode layer. The method of claim 10, And the cathode plate and the anode plate are maintained at intervals of 200 μm to 2 mm in a high vacuum of 1 × 10 ⁻⁶ Torr. In the anode plate formed on the cathode plate, Preparing an upper substrate; Forming a metal layer on the upper substrate; Heat treating the metal layer to form a black matrix layer; Forming a transparent electrode layer on the black matrix layer; And forming a plurality of phosphors on the transparent electrode layer. The method of claim 12, And maintaining the cathode plate and the anode plate at intervals of 200 μm to 2 mm in a high vacuum of 1 × 10 ⁻⁶ Torr. The method of claim 12, Field emission display characterized in that the metal layer is formed of one of the chromium (Cr) layer, molybdium (Mo) layer, titanium (Ti) layer, tantalum (Ta) layer and tungsten (W) layer having a thickness of 100 ~ 1000Å. Method of manufacturing the device. The method of claim 12, The heat treatment process of the metal layer is characterized in that the heat treatment of the metal layer at 200 ~ 500 ℃ in a gas atmosphere such as oxygen (O ₂ ), nitrogen (N ₂ ), argon (Ar) to make the color of the metal layer black. Method for manufacturing a field emission display device.