KR20020039052A - Thinner compositon for washing resist of lcd device - Google Patents
Thinner compositon for washing resist of lcd device Download PDFInfo
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- KR20020039052A KR20020039052A KR1020000068941A KR20000068941A KR20020039052A KR 20020039052 A KR20020039052 A KR 20020039052A KR 1020000068941 A KR1020000068941 A KR 1020000068941A KR 20000068941 A KR20000068941 A KR 20000068941A KR 20020039052 A KR20020039052 A KR 20020039052A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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Abstract
Description
본 발명은 액정 디스플레이 디바이스 제조 공정의 레지스트 세정액 조성물에 관한 것으로, 액정 디스플레이 디바이스 제조 공정에서 레지스트를 도포한 후 불필요한 레지스트를 세정하는 세정액 조성물에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resist cleaning liquid composition in a liquid crystal display device manufacturing process, and more particularly to a cleaning liquid composition for cleaning an unnecessary resist after applying a resist in a liquid crystal display device manufacturing process.
종래 집적회로(IC)나 고집적회로(LSI) 등의 반도체 소자를 리소그라피법에 의해 제조하는 경우, 일반적으로 실리콘 웨이퍼 등의 기판상에 산화막 등의 얇은 막을 형성한 후, 그 표면에 레지스트를 균일하게 도포하고, 이것을 노광 및 현상처리하여 레지스트 패턴을 형성하며, 상기 레지스트 패턴을 마스크(mask)로 하여 하층부의 얇은 막을 선택적 에칭(etching)하여 패턴을 형성시킨 후, 기판 상의 레지스트를 완전히 제거하는 일련의 공정이 진행된다.In the case of manufacturing a semiconductor device such as an integrated circuit (IC) or an integrated circuit (LSI) by the lithography method, a thin film such as an oxide film is generally formed on a substrate such as a silicon wafer, and then a resist is uniformly formed on the surface thereof. A resist pattern is formed by applying and exposing and developing the resist pattern, and a pattern is formed by selectively etching a thin film in the lower layer using the resist pattern as a mask, and then removing the resist on the substrate completely. The process proceeds.
종래에는 상기 기판에 레지스트를 도포할 때에 있어서, 사용되고 난 후 불필요하게 남아있는 레지스트를 제거할 때에 에틸렌글리콜 모노메틸에테르아세테이트, 에틸렌글리콜 모노에틸에테르아세테이트와 같은 셀로솔브계 용제가 사용되었으나, 이들 용제는 작업자의 인체에 치명적인 독성을 유발시키는 안전성의 문제를 가지고있다. 따라서 최근에는 인체에 무해한 에틸 락테이트, 감마부티로락톤, 프로필렌글리콜 모노메틸에테르아세테이트 등과 같은 독성이 낮은 용제를 주로 사용하고 있다.Conventionally, in applying the resist to the substrate, cellosolve solvents such as ethylene glycol monomethyl ether acetate and ethylene glycol monoethyl ether acetate have been used to remove the resist remaining unused after use. Has a safety issue that causes fatal toxicity to the human body of the worker. Therefore, recently, low-toxic solvents such as ethyl lactate, gamma butyrolactone, and propylene glycol monomethyl ether acetate, which are harmless to humans, are mainly used.
그러나 상기 용제들은 단독으로 충분한 세정효과를 얻을 수 없기 때문에 에틸 락테이트와 감마부티로락톤, 프로필렌글리콜 모노메틸에테르아세테이트와 프로필렌글리콜 모노메틸에테르 등과 같이 혼합액을 주로 사용하고 있다.However, since the solvents alone do not obtain sufficient cleaning effects, mixed liquids such as ethyl lactate, gamma butyrolactone, propylene glycol monomethyl ether acetate, and propylene glycol monomethyl ether are mainly used.
이러한 혼합액을 액정 디스플레이 디바이스 제조 공정에서 사용되는 대형 글라스 기판에 적용할 경우, 남게되는 레지스트와 불필요해서 제거되는 레지스트의 계면에서 처리시 단면형상이 수직형태의 매끈한 처리곡선을 구현하지 못하는 문제점이 있다. 즉, 반도체 디바이스의 경우 기판을 회전시키며 세정액을 분사하기 때문에 원심력의 영향으로 기판에 잔존하는 레지스트의 단면 형태가 매끈할 수 있으나, 액정 디스플레이 디바이스의 경우 세정액을 분사하면서 별도의 흡입기구를 이용해서 용해된 레지스트를 제거하는 형태를 취하기 때문에 각각의 휘발성 차이가 심한 혼합액을 사용하면 레지스트의 계면이 수직형태의 매끈한 처리곡선을 얻을 수 없는 문제점이 있다.When such a mixed solution is applied to a large glass substrate used in a liquid crystal display device manufacturing process, there is a problem in that the cross-sectional shape does not realize a smooth processing curve of vertical shape when processed at the interface between the remaining resist and the resist which is removed unnecessarily. That is, in the case of the semiconductor device, since the cleaning solution is sprayed while rotating the substrate, the cross-sectional shape of the resist remaining on the substrate may be smooth due to the centrifugal force. However, in the case of the liquid crystal display device, the liquid crystal display device may be dissolved using a separate suction device while spraying the cleaning solution. When the mixed solution having a large volatility difference is used because the resist is removed, there is a problem in that the interface of the resist cannot obtain a smooth processing curve in the vertical form.
본 발명은 종래기술의 문제점을 고려하여 인체에 대해 유해하지 않으며서 액정 디스플레이 디바이스의 제조에 사용되는 기판, 특히 대형 글라스 기판의 가장자리와 후면 부위에 사용되고 불필요하게 부착되어진 레지스트를 단시간에 효율적으로 제거할 수 있고, 계면에서 수직 형태의 레지스트 단면을 구현할 수 있는 우수한세정성을 지닌 레지스트 세정액 조성물을 제공하는 것을 목적으로 한다.The present invention is not harmful to the human body in consideration of the problems of the prior art, and it is possible to efficiently remove the unnecessary and unnecessarily attached resists on the edges and the rear portions of the substrates used in the manufacture of liquid crystal display devices, especially large glass substrates in a short time. It is an object of the present invention to provide a resist cleaning liquid composition having excellent cleanability that can be realized and that the resist cross section of the vertical form at the interface can be realized.
본 발명은 상기 목적을 달성하기 위하여, 레지스트 세정액 조성물, 특히 액정 디스플레이 디바이스용의 레지스트 세정액 조성물에 있어서,In order to achieve the above object, the present invention provides a resist cleaning liquid composition, in particular, a resist cleaning liquid composition for a liquid crystal display device.
a) 모노옥시카르본산 에스테르, 프로필렌글리콜 모노알킬에테르, 프로필렌글리콜 모노알킬에테르 아세테이트, 알킬 에타노에이트, 및 알킬 락테이트로 이루어진 군으로부터 선택되는 용제;a) a solvent selected from the group consisting of monooxycarboxylic acid esters, propylene glycol monoalkyl ethers, propylene glycol monoalkyl ether acetates, alkyl ethanoates, and alkyl lactates;
b) 플루오르계 계면활성제b) fluorine-based surfactants
를 포함하는 레지스트 세정액 조성물을 제공한다.It provides a resist cleaning liquid composition comprising a.
이하에서 본 발명을 상세하게 설명한다.Hereinafter, the present invention will be described in detail.
본 발명의 목적은 액정 디스플레이 디바이스 제조에 사용되는 대형 글라스 기판의 가장자리와 후면 부위에 사용되어지고 불필요하게 부착되는 레지스트를 제거하기 위하여 인체에 안정성이 있고, 저장성이 우수한 하나의 용제에 계면활성제를 가한 세정액 조성물을 제공하는 것으로, 특히 대형 글라스 기판의 가장자리와 후면 부위에 사용되고 불필요하게 부착되어진 레지스트를 단시간에 효율적으로 제거할 수 있고, 계면에서 수직 형태의 레지스트 단면을 구현할 수 있는 세정액 조성물을 제공하는 것이다.SUMMARY OF THE INVENTION An object of the present invention is to add a surfactant to one solvent which is stable to the human body and has excellent storage properties in order to remove resists that are unnecessarily attached to the edges and rear portions of large glass substrates used in the manufacture of liquid crystal display devices. To provide a cleaning liquid composition, in particular, to provide a cleaning liquid composition that can efficiently remove the unnecessary and unnecessarily attached resists on the edge and the back of the large glass substrate in a short time, and realize a vertical cross section of the resist at the interface .
본 발명의 레지스트 세정액 조성물은 인체에 유해한 에틸렌글리콜 모노에틸에테르아세테이트, 메틸에틸케톤, 및 인화성, 저장성에 문제가 있는 메탄올, 이소프로필알콜, 디메틸 설폭사이드(dimethyl sulfoxide) 등과 같은 화합물을 포함하는종래의 세정액을 대신 할 수 있어서 인체 유해성 및 저장성 측면에서 안정적이다.The resist cleaning liquid composition of the present invention includes conventional ethylene glycol monoethyl ether acetate, methyl ethyl ketone, and compounds such as methanol, isopropyl alcohol, dimethyl sulfoxide and the like which are flammable and have storage problems. It can replace the cleaning liquid, so it is stable in terms of human health and storage.
상기에서 선택되는 용제인 모노옥시카르본산 에스테르, 프로필렌글리콜 모노알킬에테르, 프로필렌글리콜 모노알킬에테르 아세테이트, 알킬 에타노에이트, 및 알킬 락테이트는 각각 반도체 등급의 극히 순수한 것이 선택되어 사용될 수 있으며, VLSI 등급에서는 0.1 ㎛ 수준으로 여과한 것이 사용되어 진다.The solvents selected above are monooxycarboxylic acid esters, propylene glycol monoalkyl ethers, propylene glycol monoalkyl ether acetates, alkyl ethanoates, and alkyl lactates. In the case of filtered at 0.1 ㎛ level is used.
상기 용제 중 모노옥시카르본산 에스테르는 알킬기, 알콕시기의 탄소수가 1∼5인 것이 사용 가능하며 이러한 것으로는 3-메톡시 프로피온산 메틸, 3-에톡시 프로피온산 에틸, 3-메톡시 프로피온산 에틸, 3-에톡시 프로피온산 메틸, 2-메톡시초산 메틸, 2-에톡시초산 에틸, 2-하이드록시 프로피온산 메틸, 2-하이드록시 프로피온산 에틸, 2-하이드록시 프로피온산 프로필, 2-메톡시 프로피온산 에틸, 2-에톡시 프로피온산 프로필, 2-에톡시 프로피온산에틸, β-메톡시이소낙산 메틸, α-하이드록시이소낙산 메틸 등이 있다.The monooxycarboxylic acid ester in the solvent may be an alkyl group or an alkoxy group having 1 to 5 carbon atoms, such as methyl 3-methoxy propionate, ethyl 3-ethoxy propionate, ethyl 3-methoxy propionate, 3- Methyl ethoxy propionate, methyl 2-methoxy acetate, ethyl 2-ethoxy acetate, methyl 2-hydroxy propionate, ethyl 2-hydroxy propionate, propyl 2-hydroxy propionate, ethyl 2-methoxy propionate, 2-e Propyl propyl propionate, ethyl 2-ethoxy propionate, methyl β-methoxyisobutyrate, methyl α-hydroxyisobutyrate, and the like.
상기 용제 중 프로필렌글리콜 모노알킬에테르는 알킬기의 탄소수가 1∼5인 것이 사용가능하며, 이러한 것으로는 프로필렌글리콜 모노메틸 에테르, 프로필렌글리콜 모노에틸 에테르, 프로필렌글리콜 모노프로필 에테르, 프로필렌글리콜 모노부틸 에테르 등이 있다.Among the solvents, the propylene glycol monoalkyl ether may be an alkyl group having 1 to 5 carbon atoms. Examples thereof include propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, and propylene glycol monobutyl ether. have.
상기 용제 중 프로필렌글리콜 모노알킬에테르 아세테이트는 알킬기의 탄소수가 1∼5인 것이 사용가능하며, 이러한 것으로는 프로필렌글리콜 모노메틸에테르아세테이트, 프로필렌글리콜 모노에틸에테르아세테이트, 프로필렌글리콜 모노프로필에테르아세테이트, 프로필렌글리콜 모노부틸에테르아세테이트 등이 있다.The propylene glycol monoalkyl ether acetate in the solvent may be an alkyl group having 1 to 5 carbon atoms, such as propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, propylene glycol mono Butyl ether acetate and the like.
상기 용제 중 알킬 에타노에이트로서 알킬기의 탄소수가 1∼4 인 것이 사용가능하며 이러한 것으로는 메틸 에타노에이트, 에틸 알킬 에타노에이트, 부틸 에타노에이트 등이 있다.As the alkyl ethanoate, those having 1 to 4 carbon atoms in the alkyl group may be used, and examples thereof include methyl ethanoate, ethyl alkyl ethanoate, and butyl ethanoate.
상기 용제 중 알킬 락테이트로서 알킬기의 탄소수가 1∼4인 것이 사용가능하며 이러한 것으로는 메틸 락테이트, 에틸 락테이트, 부틸 락테이트 등이 있다.Among the solvents, alkyl lactates having 1 to 4 carbon atoms in the alkyl group can be used, and examples thereof include methyl lactate, ethyl lactate and butyl lactate.
상기 본 발명 조성물의 또 다른 성분인 플루오르계 계면활성제는 플루오리네이티드 아크릴릭 에스테르 공중합체가 바람직하다. 이 공중합체는 비이온계이므로 물과 각종 용제에 우수한 용해성을 지니며, 상용화된 제품으로는 다이니뽄잉크 앤드 케미칼사의 메가페이스 R-08, 메가페이스 BL-20, 메가페이스 BL-21, 메가페이스 BL-22, 3M사의 플루오레드 FC-430 등을 들 수 있다.The fluorine-based surfactant which is another component of the composition of the present invention is preferably a fluorinated acrylic ester copolymer. Since this copolymer is nonionic, it has excellent solubility in water and various solvents, and commercialized products include Megaface R-08, Megaface BL-20, Megaface BL-21, and Megaface from Diniprok Ink & Chemical Co., Ltd. BL-22, 3M fluoride FC-430, etc. are mentioned.
상기 플루오르계 계면활성제인 플루오리네이티드 아크릴릭 에스테르 공중합체를 사용할 때에는 중량 평균 분자량이 3000내지 10000 사이의 것으로서 인화점 (오픈컵 방식으로 측정) 200 ℃, 비중 1.10 g/ml (25 ℃), 점도(20 ℃) 2100 cst, 표면장력이 24.0 mN/m(Wilhermy method)을 나타내는 것이 사용하기에 바람직하다.When using a fluorinated acrylic ester copolymer of the fluorine-based surfactant having a weight average molecular weight of 3000 to 10000, flash point (measured by open cup method) 200 ° C, specific gravity 1.10 g / ml (25 ° C), viscosity (20 2100 cst, surface tension of 24.0 mN / m (Wilhermy method) is preferred for use.
상기 플루오르계 계면활성제의 세정제 조성물 내 함유량은 0.001 내지 1 중량%가 바람직하다. 상기 계면활성제의 함유량이 0.001 중량% 미만이면 감광액에 대한 세정력이 현저히 저하되고, 1 중량%를 초과하게 되면 계면에서 동적 표면장력을 낮추어 우수한 제거성능을 나타내지만 반면 거품이 심하게 발생하여 사용시 액량을 감지하는 센서의 오동작을 유발하는 등 악영향을 미칠 수 있다.The content in the cleaning composition of the fluorine-based surfactant is preferably 0.001 to 1% by weight. When the content of the surfactant is less than 0.001% by weight, the cleaning power for the photosensitive liquid is significantly lowered. When the amount of the surfactant is more than 1% by weight, the surface surface tension is lowered at the interface, thereby showing excellent removal performance. This may adversely affect the sensor, such as causing a malfunction of the sensor.
본 발명의 적용방법은 상기 용제에 플루오르계 계면활성제를 일정 성분비로적절히 조합한 후 기판의 에지와 후면 부위에 적하 혹은 노즐을 통한 스프레이 방식으로 공급하여 불필요한 레지스트를 제거한다. 세정액 조성물의 공급량은 사용하는 레지스트의 종류, 막의 두께에 따라 조절이 가능하며 적정량은 통상 5∼100 cc/min의 범위에서 선택하여 사용한다.In the method of the present invention, the fluorine-based surfactant is properly combined with the solvent in a certain component ratio, and then, the drop and the nozzle are supplied to the edge and the rear surface of the substrate to remove unnecessary resist. The supply amount of the cleaning liquid composition can be adjusted depending on the type of resist used and the thickness of the film, and an appropriate amount is usually selected and used within the range of 5 to 100 cc / min.
본 발명의 세정액으로 제거 가능한 레지스트는 통상적으로 사용되는 포지티브 타입의 퀴논디아지드계 감광성 물질과 바인더 수지로 이루어진 레지스트가 해당된다.The resist which can be removed by the cleaning liquid of the present invention corresponds to a resist composed of a quinonediazide-based photosensitive material of a positive type and a binder resin that are commonly used.
이하의 실시예와 비교예를 통하여 본 발명을 더욱 상세하게 설명한다. 단, 실시예는 본 발명을 예시하기 위한 것이지 이들만으로 한정하는 것이 아니다.The present invention will be described in more detail with reference to the following examples and comparative examples. However, an Example is for illustrating this invention and is not limited only to these.
[실시예]EXAMPLE
실시예 1∼6 및 비교예 1, 2Examples 1 to 6 and Comparative Examples 1 and 2
크롬층을 가진 글라스 기판(370 x 470 mm) 상에 포지티브 레지스트 DTFR-3650B[(주)동진쎄미켐사 제품, 액정 디스플레이 디바이스용]을 도포한 후 건조 공정을 거친 후 두께 1.5 ㎛ 도막을 형성하였다.A positive resist DTFR-3650B (Dongjin Semichem Co., Ltd., liquid crystal display device) was applied onto a glass substrate (370 x 470 mm) having a chromium layer, and then subjected to a drying process to form a 1.5 μm thick film.
이어서 레지스트막이 형성된 글라스 기판을 트랙에 부착된 엣지 비드 세정(Edge Bead Rinse) 장비[다이니뽄스크린사 제품]를 사용하여 하기 표 1에 나타낸 조성의 세정액을 각각 6 초간 분사하여 불필요해진 레지스트를 처리하였다. 처리된 단면을 육안관찰을 통해 완전히 레지스트가 제거된 상태이면 O, 레지스트 잔류물이 남아 있으면 △, 다량의 레지스트가 존재하면 X로 세정제거성능을 평가하였다.Subsequently, a glass substrate having a resist film formed thereon was sprayed with a cleaning liquid having the composition shown in Table 1 for 6 seconds using an Edge Bead Rinse device (manufactured by Dainippon Screen Co., Ltd.) attached to the track to treat unnecessary resist. . The cross section of the treated cross section was visually evaluated for cleaning and removal performance by O when the resist was completely removed, △ when the resist residue remained, and X when a large amount of resist remained.
또한 세정액으로 처리한 기판의 상하좌우 4 지점에서 경계면인 레지스트막의 단면을 탐침식 단차측정기[일본진공기술(주) 제품, 모델명 DEKTAK 8000]로 측정하여 경계면상에서 세정처리로 인해 레지스트 적층체가 완전히 제거되면 O, 일부만 제거되면 △, 불완전한 상태로 존재하면 X로 표시하였다. 이 결과를 표 1에 나타내었다.In addition, the cross section of the resist film, which is the interface at the top, bottom, left, and right sides of the substrate treated with the cleaning liquid, is measured by a probe type measuring instrument (manufactured by Nippon Vacuum Technology Co., Ltd., model name DEKTAK 8000). O, if only part of it is removed, it is indicated by Δ, if present in an incomplete state, X. The results are shown in Table 1.
[표 1]TABLE 1
상기 표 1에서,In Table 1 above,
EPE는 3-에톡시 프로피온산에틸 에스테르(3-Ethoxy propanoic acid ethyl ester)이며, PGME는 프로필렌글리콜 모노메틸 에테르(Propyleneglycol monomethyl ether)이며, BE는 부틸 에타노에이트 (Buthyl ethanoate)이며, PGMEA는 프로필렌글리콜 모노메틸에테르 아세테이트(Propyleneglycol monomethylether acetate)이며, MBM은 β-메톡시이소낙산메틸 에스테르(β-Methoxy isobutyric acid methylester)이며, EL은 에틸 락테이트(Ethyl lactate)이며, GBL은 감마부티로락톤(γ- Butyro lactone)이며, R-08은 플루오리네이티드 아크릴릭 에스테르 코폴리머로 다이니뽄잉크 앤드 케미칼사의 메가페이스 R-08이며, BL-20은 플루오리네이티드 아크릴릭 에스테르 코폴리머로 다이니뽄잉크 앤드 케미칼사의 메가페이스 BL-20이며, FC-430은 3M사의 플루오레드 FC-430 이다.EPE is 3-Ethoxy propanoic acid ethyl ester, PGME is Propyleneglycol monomethyl ether, BE is Butyl ethanoate, PGMEA is propylene glycol Propyleneglycol monomethylether acetate, MBM is β-Methoxy isobutyric acid methylester, EL is ethyl lactate, GBL is gamma-butyrolactone Butyro lactone), R-08 is a Megaface R-08 with fluorinated acrylic ester copolymer, and BL-20 is a Megaface of Diniott Ink and Chemical with fluorinated acrylic ester copolymer Face BL-20, FC-430 is 3M Fluoride FC-430.
본 발명의 레지스트 세정액 조성물은 인체에 대해 안전성이 높을 뿐 아니라 특히 대형 글라스 기판의 가장자리와 후면 부위에 사용되고 불필요하게 부착되어진 레지스트를 단시간에 효율적으로 제거할 수 있고, 계면에서 수직 형태의 레지스트 단면을 구현할 수 있다.The resist cleaning liquid composition of the present invention is not only highly safe for the human body but also can effectively remove unnecessary and unnecessarily attached resists on the edges and backsides of large glass substrates in a short time, and can realize resist cross sections in the vertical form at the interface. Can be.
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| KR101142868B1 (en) * | 2004-05-25 | 2012-05-10 | 주식회사 동진쎄미켐 | Thinner composition for removing photosensitive resin |
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| KR101142868B1 (en) * | 2004-05-25 | 2012-05-10 | 주식회사 동진쎄미켐 | Thinner composition for removing photosensitive resin |
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