KR20020039013A - Method For Fabricating Carrier Used For Semiconductor Assembly Material - Google Patents

Method For Fabricating Carrier Used For Semiconductor Assembly Material Download PDF

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Publication number
KR20020039013A
KR20020039013A KR1020000068885A KR20000068885A KR20020039013A KR 20020039013 A KR20020039013 A KR 20020039013A KR 1020000068885 A KR1020000068885 A KR 1020000068885A KR 20000068885 A KR20000068885 A KR 20000068885A KR 20020039013 A KR20020039013 A KR 20020039013A
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South Korea
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loading mechanism
semiconductor assembly
raw material
semiconductor
material loading
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KR1020000068885A
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Korean (ko)
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KR100663183B1 (en
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박용기
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윤종용
삼성전자 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE: A method for fabricating an apparatus for loading a raw material for assembling a semiconductor is provided to prevent electrostatic discharge without using additive, by performing an ion implantation process regarding the surface of the loading apparatus so that the overall characteristic of a plastic material is maintained while only the property of the surface is modified. CONSTITUTION: The prototype of the apparatus for loading the raw material for assembling the semiconductor is molded by using a high molecule plastic material. An ion implantation process is performed regarding the surface of the prototype of the molded loading apparatus to electrify the surface of the prototype.

Description

반도체 조립 원부자재 적재기구의 제조 방법 {Method For Fabricating Carrier Used For Semiconductor Assembly Material}Method for manufacturing raw material loading mechanism for semiconductor assembly {Method For Fabricating Carrier Used For Semiconductor Assembly Material}

본 발명은 반도체 조립 공정에서 사용되는 원부자재 적재기구의 제조 방법에 관한 것으로서, 특히 반도체 웨이퍼를 적재하는 웨이퍼 카세트와 리드 프레임 매거진을 적재하는 매거진 캐리어의 제조 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing raw subsidiary material loading mechanisms used in a semiconductor assembly process, and more particularly, to a method for manufacturing a magazine carrier for loading a wafer cassette for loading a semiconductor wafer and a lead frame magazine.

잘 알려진 바와 같이, 반도체 조립 공정에 있어서 여러개의 웨이퍼(wafer)를 적재하고 운반하는 기구로 웨이퍼 카세트(wafer cassette)가 사용되며, 리드 프레임(lead frame)이 적재된 매거진(magazine) 여러개를 적재, 운반하는 기구로 매거진 캐리어(magazine carrier)가 사용된다. 웨이퍼 카세트는 여러개의 웨이퍼를 한개씩 랙(rack)에 끼워 넣은 후 운반과 설비 적재가 가능하도록 제조된 용기를 말하며, 매거진 캐리어는 리드 프레임 적재 매거진을 여러개 운반, 보관하기 위해 제조된 박스 형태의 용기를 말한다. 매거진은 여러개의 리드 프레임을 한개씩 끼워 넣거나 빼낼 수 있도록 골이 파여져 있는 탄창 형태의 기구이다.As is well known, a wafer cassette is used as a mechanism for loading and transporting multiple wafers in a semiconductor assembly process, and a plurality of magazines loaded with lead frames are loaded. Magazine carriers are used as the mechanism for carrying. Wafer cassette refers to a container manufactured to transport and store equipment after inserting several wafers into a rack one by one. A magazine carrier refers to a box-type container manufactured to transport and store several lead frame loading magazines. Say. A magazine is a magazine-shaped instrument with a ridge to insert or remove several lead frames one by one.

종래의 웨이퍼 카세트와 매거진 캐리어는 견고성과 정전기 특성 등을 감안하여 대개 강철 재질로 제조된다. 강철 재질은 도전체이므로 정전기 문제가 없고 분진이 거의 없어 클린 룸(clean room) 공정에 적합하고, 또한 매우 견고하여 오랫동안 사용할 수 있다는 장점이 있다. 반면에, 강철 재질은 무게가 무겁고 다양한 형태의 디자인으로 만들기 어려운 단점이 있다.Conventional wafer cassettes and magazine carriers are usually made of steel in view of their robustness and electrostatic properties. Since steel is a conductor, there is no problem of static electricity and there is little dust, so it is suitable for a clean room process, and it is very robust and can be used for a long time. On the other hand, steel material has a disadvantage that it is heavy and difficult to make a variety of designs.

따라서, 본 발명의 목적은 정전기 방전과 분진 발생의 문제가 없으면서 동시에 무게가 가볍고 다양한 형태의 설계가 가능한 반도체 조립 원부자재 적재기구를 제조하기 위한 것이다.Accordingly, an object of the present invention is to manufacture a semiconductor assembly raw material loading mechanism that is light in weight and can be designed in various forms without the problem of electrostatic discharge and dust generation.

상기 목적을 달성하기 위하여, 본 발명은 고분자 플라스틱 재질로 적재기구의 원형을 성형하고, 이온주입법으로 대전방지 처리를 하는 반도체 조립 원부자재 적재기구의 제조 방법을 제공한다. 즉, 본 발명에 따른 반도체 조립 원부자재 적재기구의 제조 방법은 고분자 플라스틱 재질로 반도체 조립 원부자재용 적재기구의 원형을 성형하는 단계와 성형된 적재기구 원형의 표면에 이온을 주입하여 대전처리를 하는 단계를 포함한다.In order to achieve the above object, the present invention provides a method for manufacturing a semiconductor assembly raw material loading mechanism to form a circular shape of the loading mechanism made of a polymer plastic material, the antistatic treatment by the ion implantation method. That is, the method for manufacturing a semiconductor assembly raw material loading mechanism according to the present invention comprises the steps of forming a prototype of the semiconductor assembly raw material loading mechanism made of a polymer plastic material and charging by injecting ions into the surface of the circular shape of the formed loading mechanism. Steps.

대전처리 단계에서는 예를 들어 질소, 아르곤 등의 기체 이온, 또는 티타늄, 리튬, 알루미늄 등의 금속 이온이 적재기구 원형의 표면으로부터 약 1.5㎛의 깊이까지 이온주입된다. 본 발명의 제조 방법이 적용되는 반도체 조립 원부자재의 적재기구는 예를 들어 웨이퍼 카세트, 매거진 캐리어, 트레이, 캐리어 테이프 등이다.In the electrification step, for example, gas ions such as nitrogen and argon, or metal ions such as titanium, lithium, and aluminum are ion implanted to a depth of about 1.5 탆 from the surface of the loading device prototype. The stacking mechanism of the raw material for assembling semiconductors to which the manufacturing method of the present invention is applied is, for example, a wafer cassette, a magazine carrier, a tray, a carrier tape, or the like.

이하, 본 발명의 실시예에 대하여 보다 상세히 설명하고자 한다.Hereinafter, embodiments of the present invention will be described in more detail.

먼저, 고분자 플라스틱 재질로 반도체 조립 원부자재용 적재기구의 원형을성형한다. 앞서 종래기술에서 설명하였듯이, 반도체 조립 원부자재용 적재기구는 예를 들어 웨이퍼 카세트 또는 매거진 캐리어 등이다. 그 밖에도 통상적으로 반도체 조립 공정에 널리 사용되는 트레이(tray) 또는 캐리어 테이프(carrier tape) 등도 포함된다.First, the circular shape of the loading mechanism for semiconductor assembly raw materials is molded from a polymer plastic material. As described above in the prior art, the stacking mechanism for the raw material for semiconductor assembly is, for example, a wafer cassette or a magazine carrier. In addition, a tray or a carrier tape commonly used in a semiconductor assembly process is also included.

적재기구의 재질로 사용되는 고분자 플라스틱은 예를 들어 폴리 프로필렌 옥사이드와 같은 열가소성 수지가 사용될 수 있으나, 그 밖의 열가소성 수지나 또는 열경화성 수지 등도 사용가능하다. 고분자 플라스틱은 열변형 온도나 강도 등을 고려하여 일반적으로 사용되거나 알려져 있는 재질을 선택할 수 있다.As the polymer plastic used as the material of the loading mechanism, a thermoplastic resin such as polypropylene oxide may be used, but other thermoplastic resins or thermosetting resins may be used. Polymeric plastics may be selected from materials that are generally used or known in consideration of heat deformation temperature and strength.

예를 들어, 사출 성형 공법으로 적재기구의 원형을 성형한 후에는 정전기 방전의 문제를 해결하기 위하여 대전처리를 한다. 그러나, 통상적으로 대전처리를 위하여 사용되는 탄소 분말 또는 탄소 섬유 재질의 대전처리용 첨가제는 탄소 분진이 발생하여 반도체 칩에 치명적인 손상을 줄 수 있다.For example, after forming the prototype of the loading mechanism by the injection molding method, charging is performed to solve the problem of electrostatic discharge. However, carbon powder or carbon fiber-based additives, which are typically used for electrification, may generate carbon dust and cause fatal damage to the semiconductor chip.

따라서, 본 발명은 대전처리를 위하여 이온주입법을 사용한다. 예를 들어, 질소, 아르곤 등의 기체 이온, 또는 티타늄, 리튬, 알루미늄 등의 금속 이온을 플라스틱 재질의 적재기구 원형에 이온주입한다. 이 때, 이온주입은 적재기구의 표면으로부터 약 1.5㎛의 깊이까지 이루어지며, 적재기구는 106Ω/㎠∼1012Ω/㎠의 표면저항을 가지게 된다. 이온주입은 예를 들어 가속전압 2MeV 이하, 전류밀도 30mA/㎠ 이하의 조건하에서 이루어진다.Therefore, the present invention uses the ion implantation method for the charging treatment. For example, gas ions, such as nitrogen and argon, or metal ions, such as titanium, lithium, and aluminum, are ion-implanted in the plastic loading mechanism prototype. At this time, the ion implantation is made up to a depth of about 1.5㎛ from the surface of the loading mechanism, the loading mechanism has a surface resistance of 10 6 Ω / ㎠ ~ 10 12 Ω / ㎠. Ion implantation is performed under conditions of an acceleration voltage of 2MeV or less and a current density of 30 mA / cm 2 or less, for example.

이온주입 조건은 이온주입 깊이와 그에 따른 표면저항을 고려하여 선택할 수있는 사항이다. 가속전압과 전류밀도를 증가시키면 이온주입 깊이는 더 커지고 그에 따라 더 낮은 표면저항을 얻을 수 있다.The ion implantation conditions can be selected in consideration of the ion implantation depth and the resulting surface resistance. Increasing the acceleration voltage and current density results in a larger ion implantation depth, resulting in lower surface resistance.

이상 설명한 바와 같이 본 발명의 제조 방법에 따르면, 반도체 조립 공정에서 사용되는 원부자재 적재기구의 무게를 대폭 경감시킬 수 있고, 적재하는 원부자재의 형태에 따라 다양한 형태로 쉽게 제조할 수 있다. 아울러, 적재기구의 표면에 이온주입을 행하여 플라스틱 재질의 전체 특성은 유지시키면서 표면의 성질만 변화키기 때문에, 별도의 대전처리용 첨가제 없이 정전기 방전을 방지할 수 있고 또한 분진 발생의 문제가 없다.As described above, according to the manufacturing method of the present invention, the weight of the raw subsidiary material loading mechanism used in the semiconductor assembly process can be greatly reduced, and it can be easily manufactured in various forms according to the form of the raw subsidiary material to be loaded. In addition, since ion implantation is performed on the surface of the loading mechanism to change only the properties of the surface while maintaining the overall properties of the plastic material, electrostatic discharge can be prevented without an additional charge additive, and there is no problem of dust generation.

Claims (3)

고분자 플라스틱 재질로 반도체 조립 원부자재용 적재기구의 원형을 성형하는 단계와, 상기 성형된 적재기구 원형의 표면에 이온을 주입하여 대전처리를 하는 단계를 포함하는 반도체 조립 원부자재 적재기구의 제조 방법.A method of manufacturing a semiconductor assembly raw material loading mechanism comprising the step of molding a circular shape of the semiconductor assembly raw material loading mechanism made of a polymer plastic material, and charging by implanting ions into the surface of the circular shape of the molded loading mechanism. 제 1 항에 있어서, 상기 대전처리 단계는 질소, 아르곤 등의 기체 이온, 또는 티타늄, 리튬, 알루미늄 등의 금속 이온을 상기 적재기구 원형의 표면으로부터 약 1.5㎛의 깊이까지 이온주입하는 것을 포함하는 반도체 조립 원부자재 적재기구의 제조 방법.The semiconductor of claim 1, wherein the electrification step comprises implanting gas ions, such as nitrogen and argon, or metal ions, such as titanium, lithium, and aluminum, to a depth of about 1.5 μm from the surface of the loading mechanism prototype. Method for manufacturing the assembled raw subsidiary material loading mechanism. 제 1 항에 있어서, 상기 반도체 조립 원부자재의 적재기구는 웨이퍼 카세트, 매거진 캐리어, 트레이, 그리고 캐리어 테이프 중의 어느 하나인 것을 특징으로 하는 반도체 조립 원부자재 적재기구의 제조 방법.The method of manufacturing a semiconductor assembly raw material loading mechanism according to claim 1, wherein the semiconductor assembly raw material loading mechanism is any one of a wafer cassette, a magazine carrier, a tray, and a carrier tape.
KR20000068885A 2000-11-20 2000-11-20 Method For Fabricating Carrier Used For Semiconductor Assembly Material KR100663183B1 (en)

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