KR20020037492A - Method for manufacturing lcd formed a color filter on the tft array - Google Patents
Method for manufacturing lcd formed a color filter on the tft array Download PDFInfo
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- KR20020037492A KR20020037492A KR1020000067420A KR20000067420A KR20020037492A KR 20020037492 A KR20020037492 A KR 20020037492A KR 1020000067420 A KR1020000067420 A KR 1020000067420A KR 20000067420 A KR20000067420 A KR 20000067420A KR 20020037492 A KR20020037492 A KR 20020037492A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136222—Colour filters incorporated in the active matrix substrate
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Abstract
Description
본 발명은 TFT(Thin Film Transistor) 어레이 상에 칼라 필터(color filter)가 형성된 엘시디 제조방법에 관한 것으로서, 보다 상세하게는 제조공정이 단순하도록 개선된 TFT 어레이 상에 칼라 필터가 형성된 엘시디 제조방법에 관한 것이다.The present invention relates to an LCD manufacturing method in which a color filter is formed on a TFT (Thin Film Transistor) array. More particularly, the present invention relates to an LCD manufacturing method in which a color filter is formed on an improved TFT array to simplify a manufacturing process. It is about.
도 1에는 종래의 TFT 어레이 상에 칼라 필터가 형성된 엘시디의 구성을 개략적으로 나타낸 단면도가 도시되어 있다.1 is a cross-sectional view schematically showing the configuration of an LCD in which a color filter is formed on a conventional TFT array.
도면을 참조하면, TFT 어레이 상에 칼라 필터가 형성된 엘시디는, 기판(11)과, 상기 기판(11)에 상에 형성된 TFT 어레이층(12)과, 상기 TFT 어레이층(12) 상에 형성된 상기 TFT 어레이층(12) 상에 형성된 칼라 필터층(13)을 포함하여 구성된다.Referring to the drawings, an LCD having a color filter formed on a TFT array includes a substrate 11, a TFT array layer 12 formed on the substrate 11, and a TFT formed on the TFT array layer 12. The color filter layer 13 formed on the TFT array layer 12 is included.
상기 TFT 어레이층(12)은, 예컨대 글라스로 이루어진 기판(11) 상에 형성된 게이트 전극층(12a)과, 상기 게이트 전극층(12a)을 매립하며 절연되도록 기판(11)상에 형성된 절연층(12b)과, 상기 절연층(12b)상에 형성된 아모퍼스 실리콘층(a-si)(12c)과, 상기 아모퍼스 실리콘층(12c)의 중앙부가 노출되도록 그 좌우 및 상기 절연층(12b)상에 형성된 소스(source)층(12d) 및 드레인(drain)층(12e)과, 전술한 각 레이어들을 보호하기 위한 보호층(passivation layer)(12f)으로 이루어진다.The TFT array layer 12 is formed of, for example, a gate electrode layer 12a formed on a substrate 11 made of glass, and an insulating layer 12b formed on the substrate 11 so as to be insulated by filling the gate electrode layer 12a. And the amorphous silicon layer (a-si) 12c formed on the insulating layer 12b and the left and right sides of the amorphous silicon layer 12c so as to be exposed, and formed on the insulating layer 12b. A source layer 12d and a drain layer 12e, and a passivation layer 12f for protecting each of the above-described layers.
상기와 같이 구성된 TFT 어레이층(12) 상에 형성된 칼라 필터층(13)은, 상기 보호층(12f)에 연속적으로 형성된 R,G,B의 칼라 필터 스트라이프층(13a,13b,13c)과, 상기 칼라 필터 스트라이프층(13a,13b,13c) 상에 격벽으로 형성된 블랙 매트릭스층(13d)과, 상기 칼라 필터 스트라이프층(13a,13b,13c), 블랙 매트릭스층(13d)을 매립하며 그 위에 평탄하게 형성된 유전체층(13e)과, 화소전극용으로 형성된 컨텍트홀(14)과, 그리고 그 상부에 소정 공간(13f')를 두고 형성된 화소전극층(13f)으로 이루어진다.The color filter layer 13 formed on the TFT array layer 12 configured as described above includes R, G, and B color filter stripe layers 13a, 13b, 13c continuously formed on the protective layer 12f, and A black matrix layer 13d formed as a partition wall on the color filter stripe layers 13a, 13b, and 13c, the color filter stripe layers 13a, 13b, and 13c, and a black matrix layer 13d are embedded and planarized thereon. A dielectric layer 13e formed, a contact hole 14 formed for the pixel electrode, and a pixel electrode layer 13f formed with a predetermined space 13f 'formed thereon.
이와 같은 구성으로 이루어진 TFT 어레이층(12)과 칼라 필터층(13)의 일체형 엘시디는 빛에 의한 픽셀(pixel)간의 혼색을 방지하고, 칼라 필터층(13)에 블랙 매트릭스층(13d)을 TFT 어레이층(12)을 차폐할 수 있는 특징을 갖는 블랙 매트릭스층(13d)을 형성함으로서 제조공정이 복잡하다는 문제점이 있다.The integrated LCD of the TFT array layer 12 and the color filter layer 13 having such a structure prevents color mixing between pixels due to light, and the black matrix layer 13d is formed on the color filter layer 13 by the TFT array layer. There is a problem that the manufacturing process is complicated by forming the black matrix layer 13d having the characteristic of shielding (12).
본 발명은 상기와 같은 문제점을 해결하기 위하여 창출된 것으로서, 블랙 매트릭스 제조공정을 생략하여 제조공정을 단순화시킨 TFT 어레이 상에 칼라 필터가 형성된 엘시디 제조방법을 제공하는데 그 목적이 있다.The present invention has been made to solve the above problems, and an object thereof is to provide an LCD manufacturing method in which a color filter is formed on a TFT array, which simplifies the manufacturing process by omitting the black matrix manufacturing process.
도 1은 일반적인 칼라 필터 기판의 구성을 나타낸 개략적인 단면도.1 is a schematic cross-sectional view showing the configuration of a general color filter substrate.
도 2는 본 발명에 따른 TFT 어레이 상에 칼라 필터가 형성된 엘시디 제조방법을 순차적으로 설명한 개략적인 플로우 챠트.2 is a schematic flowchart sequentially illustrating a method of manufacturing an LCD having a color filter formed on a TFT array according to the present invention;
도 3a 내지 도 3f는 본 발명에 따른 TFT 어레이 상에 칼라 필터가 형성된 엘시디 제조방법을 순차적으로 나타내 보인 개략적인 단면도.3A to 3F are schematic cross-sectional views sequentially showing an LCD manufacturing method in which a color filter is formed on a TFT array according to the present invention;
<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>
20. 기판30. TFT 어레이층20. Substrate 30. TFT array layer
41a,41b,41c. 칼라 필터 스트라이프층41a, 41b, 41c. Color filter stripe layer
42. 유전체층43. 컨텍트홀42. Dielectric layer 43. Contact hole
44. 화소전극층44. Pixel electrode layer
상기와 같은 목적을 달성하기 위한 본 발명의 TFT 어레이 상에 칼라 필터가 형성된 엘시디 제조방법은, (a) 기판을 준비하는 단계와; (b) 상기 기판 위에 TFT 어레이층을 형성하는 단계와; (c) 상기 TFT 어레이층 위에 연속적으로 교번하며, R,G,B의 칼라 필터 스트라이프층을 적어도 두개의 상기 칼라 필터 스트라이프층이 중첩되도록 중첩부를 두며 형성하는 단계와; (d) 상기 칼라 필터 스트라이프층의 위에 상기 칼라 필터 스프라이층을 평탄화시키며 유전체층을 형성하는 단계와; (e) 상기 TFT 어레이층 상에 컨텍트홀을 형성하는 단계와; (f) 상기 중첩부에 나란하게 소정의 공간을 두고 상기 유전체층 및 상기 컨텍트홀 상부에 화소전극층을 형성하는 단계;를 포함하는 것을 그 특징으로 한다.An LCD manufacturing method in which a color filter is formed on a TFT array of the present invention for achieving the above object comprises the steps of: (a) preparing a substrate; (b) forming a TFT array layer on the substrate; (c) successively alternating forming the color filter stripe layers of R, G, and B on the TFT array layer with overlapping portions such that at least two color filter stripe layers overlap; (d) planarizing the color filter spry layer and forming a dielectric layer over the color filter stripe layer; (e) forming a contact hole on the TFT array layer; (f) forming a pixel electrode layer on the dielectric layer and the contact hole with a predetermined space parallel to the overlapping portion.
이하, 첨부된 도면을 참조하여 본 발명에 따른 바람직한 실시예를 상세히 설명하기로 한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도 2에는 본 발명에 따른 TFT 어레이 상에 칼라 필터가 형성된 엘시디 제조방법을 순차적으로 설명한 개략적인 플로우 챠트가 도시되어 있다. 여기에서는 일반적인 엘시디 제조방법에 대한 설명은 생략하고, 본 발명의 특징에 따른 제조방법만을 설명하기로 한다.FIG. 2 is a schematic flowchart illustrating sequentially an LCD manufacturing method in which a color filter is formed on a TFT array according to the present invention. Here, description of the general LCD manufacturing method will be omitted, and only the manufacturing method according to the features of the present invention will be described.
도시된 바와 같이, 본 발명에 따른 TFT 어레이 상에 칼라 필터가 형성된 엘시디 제조방법은, 우선, 도 3a에 도시된 바와 같이 예컨대, 글라스 소재의 기판(20)을 준비한다.(단계 110) 이때, 상기 기판(20)을 세정 및 린스(rinse)를 통하여 기판(20)상의 불순물을 제거한다. 이어서, 상기 기판(20) 위에 TFT 어레이층(30)을 형성한다.(단계 120)As shown, the LCD manufacturing method in which the color filter is formed on the TFT array according to the present invention, first, as shown in Figure 3a, for example, prepare a substrate 20 of a glass material (step 110). The substrate 20 is cleaned and rinsed to remove impurities on the substrate 20. Subsequently, a TFT array layer 30 is formed on the substrate 20 (step 120).
상기 TFT 어레이층(30)의 형성 방법은 전술한 바와 같이, 상기 기판(20) 상에 게이트 전극층(36)을 형성하고, 상기 게이트 전극층(36)을 매립하며 절연되도록 기판(20)상에 절연층(31)을 형성하며, 상기 절연층(31)상에 아모퍼스 실리콘(a-si)층(32)을 형성하고, 상기 아모퍼스 실리콘층(32)의 중앙부가 노출되도록 그 좌우 및 절연층(31)상에 소스층(33) 및 드레인층(34)을 형성한다. 그리고 상기 드레인층(34)의 일부가 노출되게 노출부(35a)를 형성하면서 전술한 각 레이어들을 보호하기 위한 보호층(35)을 형성한다.As described above, in the method of forming the TFT array layer 30, the gate electrode layer 36 is formed on the substrate 20, the gate electrode layer 36 is embedded and insulated on the substrate 20 to be insulated. A layer 31 is formed, and an amorphous silicon (a-si) layer 32 is formed on the insulating layer 31, and the left and right and insulating layers thereof are exposed to expose a central portion of the amorphous silicon layer 32. The source layer 33 and the drain layer 34 are formed on the 31. In addition, the exposed portion 35a is formed to expose a portion of the drain layer 34 to form a protective layer 35 for protecting the above-mentioned layers.
이어서, 상기와 같이 형성된 TFT 어레이층(30) 위에 도 3b에 도시된 바와 같이, 상기 노출부(35a)를 제외한 상기 보호층(35) 상에 R,G,B의 칼라 필터 스트라이프층(41a,41b,41c)을 연속적으로 형성한다.(단계 130) 이때, 적어도 두개의 예컨대, R,G의 칼라 필터 스트라이프층(41a,41b)이 중첩되도록 중첩부(41d)를 마련하며형성한다.Subsequently, as shown in FIG. 3B, on the TFT array layer 30 formed as described above, color filter stripe layers 41a, R, G, and B on the protective layer 35 except for the exposed portion 35a. 41b and 41c are successively formed (step 130). At this time, at least two overlapping portions 41d are formed to overlap the color filter stripe layers 41a and 41b of R and G, for example.
그리고 도 3c에 도시된 바와 같이, 상기 칼라 필터 스트라이프층(41a,41b,41c) 상에 평탄되도록 이 칼라 필터 스트라이프층(41a,41b,41c)을 매립하며 그 상부면이 평탄하도록 유전체층(42)을 형성한다.(단계 140)As shown in FIG. 3C, the color filter stripe layers 41a, 41b, and 41c are buried so as to be flat on the color filter stripe layers 41a, 41b, and 41c, and the dielectric layer 42 is disposed so that the top surface thereof is flat. (Step 140).
이어서, 도 3d에 도시된 바와 같이, 상기 노출부(35a)가 노출될 수 있도록 즉, 드레인층(34)이 노출되도록 화소전극용의 컨텍트홀(43)을 형성한다.(단계 150) 그리고 도 3e에 도시된 바와 같이, 상기 중첩부(41d)와 나란하게 공간부(44a)를 두고 유전체층(42) 위와 컨텍트홀(43) 내에 화소전극층(44)을 형성한다.(단계 160)Next, as shown in FIG. 3D, a contact hole 43 for the pixel electrode is formed so that the exposed portion 35a can be exposed, that is, the drain layer 34 is exposed (step 150). As shown in 3e, the pixel electrode layer 44 is formed on the dielectric layer 42 and in the contact hole 43 with the space 44a parallel to the overlapping portion 41d.
그리고 도면에는 도시하지는 않았지만, 이렇게 제조된 엘시디에 액정공정을 거친 후에 최종 완성된다.Although not shown in the drawings, the LCD is manufactured and then finally finished after the liquid crystal process.
상기와 같이 종래와 같은 수지 블랙 매트릭스 공정을 생략하므로서 하나의 포토리쏘그라피(photolithography) 공정이 단축된다. 이러한 블랙 매트릭스 공정 생략에 대한 보상을 하기 위해 블랙 매트릭스의 기능을 대신해야 한다. 이 블랙 매트릭스의 기능 내지 특징은 백라이트(back light)의 빛에 의한 화소 및 픽셀간의 혼색을 방지하고, TFT 어레이층의 포토리키지(photoleakage)를 방지하며, 칼라 필터층에 블랙 매트릭스층을 TFT 어레이층을 차폐할 수 있다.By omitting the conventional resin black matrix process as described above, one photolithography process is shortened. To compensate for this black matrix process omission, the function of the black matrix should be substituted. The function and characteristics of this black matrix are to prevent the intermixing between pixels and pixels by the light of the back light, to prevent photoleakage of the TFT array layer, and to add the black matrix layer to the color filter layer and the TFT array layer. Can be shielded.
따라서 본 발명에서는 TFT 어레이층의 데이터 전극 라인을 블랙 매트릭스를 대신하고 그 특성을 부가한다. 이때 사용하는 데이터 전극 라인에 사용되는 재료는 일반적으로 사용하는 Cr을 사용할 수도 있고, 그 특성을 높일 목적으로 Cr 라인을 형성할 때 반사율을 고려하여 CrOx나 CrNx을 증착하여 2중막 또는 다중막으로도 사용이 가능하다.Therefore, in the present invention, the data electrode line of the TFT array layer replaces the black matrix and adds the characteristic thereof. At this time, the material used for the data electrode line may be used as a commonly used Cr, in order to improve the characteristics, when forming the Cr line by depositing CrOx or CrNx in consideration of the reflectance, as a double film or multiple film Can be used.
또한, 블랙 매트릭스의 특성을 부가하기 위해 상기 칼라 필터 스트라이프층의 R,G,B중 두개의 칼라씩 중첩 성형하는 것은 물론 세 개의 칼라를 중첩하여 광차폐 특성을 더욱 향상시키게 된다.In addition, in order to add the characteristics of the black matrix, not only the overlapping molding of two colors of R, G, and B of the color filter stripe layer but also the three colors are overlapped to further improve the light shielding characteristics.
그리고 상기 칼라 필터 스트라이프층이 중첩되도록 레이저 스캔을 중첩하여 실시하고, 즉, 동일 위치에 스캐닝을 반복하므로서 가능한 것이다.The laser scan may be superimposed so that the color filter stripe layers overlap, that is, by repeating scanning at the same position.
그리고 상기 칼라 필터층을 형성할 때 컨텍트홀은 미리 제작해 둘 수 있으며 유기 보호막의 컨텍트홀 제작시 동시 제작이 가능하다.When forming the color filter layer, a contact hole may be prepared in advance, and simultaneous manufacture may be performed when manufacturing the contact hole of the organic passivation layer.
상술한 바와 같이 본 발명에 따른 TFT 어레이 상에 칼라 필터가 형성된 엘시디 제조방법은 다음과 같은 효과를 갖는다.As described above, the LCD manufacturing method in which the color filter is formed on the TFT array according to the present invention has the following effects.
종래의 블랙 매트릭스층 대신에 R,G,B의 칼라 필터 스트라이프층을 중첩하게 제작하므로서 공정이 단순화되며, 간단한 구조의 엘시디가 제공될 수 있다.Instead of the conventional black matrix layer, the color filter stripe layers of R, G, and B are superimposed to simplify the process, and an LCD of a simple structure may be provided.
블랙 매트릭스 제조공정을 생략으로 인해 R,G,B 픽셀의 개구율을 높일 수 있어 밝기가 향상된 엘시디를 제조할 수 있다.By omitting the black matrix manufacturing process, it is possible to increase the aperture ratio of the R, G, and B pixels, thereby manufacturing an LCD having improved brightness.
본 발명은 도면에 도시된 일 실시예를 참고로 설명되었으나 이는 예시적인 것에 불과하며, 당해 기술 분야에서 통상의 지식을 가진 자라면 이로부터 다양한 변형 및 균등한 실시예가 가능하다는 점을 이해할 것이다. 따라서 본 발명의 진정한 보호 범위는 첨부된 특허청구의범위에 의해서만 정해져야 할 것이다.Although the present invention has been described with reference to one embodiment shown in the drawings, this is merely exemplary, and it will be understood by those skilled in the art that various modifications and equivalent embodiments are possible. Therefore, the true scope of protection of the present invention should be defined only by the appended claims.
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